CN115917737A - 具有至少三个功率单元的功率模块 - Google Patents

具有至少三个功率单元的功率模块 Download PDF

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Publication number
CN115917737A
CN115917737A CN202180046414.6A CN202180046414A CN115917737A CN 115917737 A CN115917737 A CN 115917737A CN 202180046414 A CN202180046414 A CN 202180046414A CN 115917737 A CN115917737 A CN 115917737A
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Prior art keywords
power
power module
cells
flow direction
coolant flow
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CN202180046414.6A
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Inventor
延斯·施门格
罗曼·克格勒
亚历山大·卢夫特
卢茨·纳米斯洛
贝恩德·罗佩尔特
托马斯·施温
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Siemens AG
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Siemens AG
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Publication of CN115917737A publication Critical patent/CN115917737A/zh
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    • H01L25/11—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices having separate containers the devices being of a type provided for in group H01L29/00
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Abstract

本发明涉及一种具有至少两个功率单元(4)的功率模块(2)，功率单元分别包括至少一个功率半导体(6)和基底(8)。为了减小功率模块所需的结构空间并改进散热而提出，将相应至少一个功率半导体(6)特别是材料配合地与相应的基底(8)连接，其中，基底(8)将至少两个功率单元(4)分别直接与公共冷却体(26)的表面(24)材料配合地连接。

Description

具有至少三个功率单元的功率模块
技术领域
本发明涉及一种具有至少两个功率单元的功率模块。
此外，本发明还涉及一种具有至少一个这种类型的功率半导体模块的变流器。
背景技术
在这种类型的变流器中，(尤其通过壳体)封闭的、并且当前以分立的结构形式制造的开关模块通常例如经由实心金属底板被拧到冷却体上。变流器例如应理解为整流器、逆变器、转换器或直流电压转换器。
公开文献DE 102009 001 722A1描述了一种功率半导体模块，其底板被设计为多层基底并且设置有硬化的导热膏，并且功率半导体模块与冷却体导热接触。
公开文献DE 102010 022 562A1描述了一种用于安装在印刷电路板上的电功率模块，其包括：用于装配在热沉的表面上的第一侧，其中，第一侧在电功率模块位于热沉上的装配位置中基本上平行于热沉布置；以及设置有电连接元件的第二侧，其中，电连接元件适于将电功率模块与印刷电路板电连接。当电功率模块包括至少一个销钉状固定元件或适合于容纳至少一个销钉状固定元件时，该电功率模块能够以更简单的方式与印刷电路板和热沉连接，该销钉状固定元件能够插入到热沉的至少一个孔中并且适合于容纳固定夹持元件，使得该固定夹持元件由于其被引入到至少一个销钉状固定元件中而固定夹持在热沉的至少一个孔中。
公开文献EP 3 624 184 A1描述了一种用于制造功率模块单元的方法，其中，基板设有凹部。基板与承载功率半导体的基底连接。在基底已固定在基板上之后，冷却肋被引导到基板的凹部中并且形状配合地和/或力传递地固定。
专利文献DE 102008 007 310B4描述了一种用于传输电流和/或电信号的电压入式触点，特别是压入式销形触点，其具有压入部段和装配部段，它们经由释放部段彼此机械耦合连接，并且释放部段具有补偿区域和止挡区域，其中，补偿区域允许压入部段和装配部段的耦合状态的相对运动，并且，止挡区域阻止压入部段和装配部段的相向移动，并且其中，释放部段的止挡区域相对于电压入式触头的力中心线对称地布置，沿该力中心线能够将压入力引入到电压入式触点中，这通过将电压入式触点压入载体中导致。
发明内容
在此背景下，本发明的目的在于减少功率模块所需的空间并改进散热。
根据本发明，该目的通过一种具有至少两个功率单元的功率模块来实现，功率单元分别包括至少一个功率半导体和基底，其中，相应的至少一个功率半导体尤其材料配合地与相应的基底连接，其中，至少三个功率单元的基底分别直接地与公共冷却体的表面材料配合地连接，其中，冷却体被配置为，使得气态冷却剂在冷却剂流动方向上流动，其中，冷却剂流动方向基本上平行于冷却体的表面延伸，其中，功率单元横向于冷却剂流动方向偏移地布置，其中，冷却体中具有沿冷却剂流动方向延伸地布置的冷却肋。
此外，根据本发明，该目的通过一种具有至少一个这样的功率模块的变流器来实现。
下面列出的与功率模块相关的优点和优选设计方案能够类似地转移到变流器。
本发明基于这样的考虑，即通过减少热界面的数量来降低功率模块的空间需求，并且在此实现改进的散热。这种功率模块具有至少三个功率单元，其中，功率单元分别包括至少一个功率半导体和基底。基底是在两侧金属化的介电材料层，其中，介电材料层具有例如25μm至400μm，特别是50μm至250μm的厚度d。此外，介电材料层包含陶瓷材料(例如氮化铝或氧化铝)或有机材料(例如聚酰胺)。特别地，金属化层包含铜、钼、金和/或银。此外，基底的金属化结构的至少一侧能够结构化地设计。功率半导体尤其实施为晶体管和/或二极管，其中，晶体管例如实施为绝缘栅双极晶体管(IGBT)、金属氧化物半导体场效应晶体管(MOSFET)或场效应晶体管。相应至少一个功率半导体尤其材料配合地(例如通过烧结连接或者焊接连接)与相应的基底连接。
功率单元的基底分别尤其利用背离至少一个功率半导体的一侧直接材料配合地与公共冷却体的表面连接。直接材料配合的接触应理解为一种直接接触，包括用于产生材料配合的连接的连接剂，例如粘合剂、焊料、烧结膏等，然而附加连接元件，例如附加导体、键合线、间隔件、基板、导热膏等不包括在内。由于省略了这种附加的连接元件，实现了功率半导体的改进的导热连接，从而发生了改进的散热。此外，通过直接的材料连接节省了空间。通过至少三个功率单元在一个公共冷却体上的材料配合的连接，导致功率单元在冷却体表面上的定位方面具有高度的灵活性，以便通过热扩散实现最佳散热并最大限度地利用冷却体的表面。
冷却体构造成使得气态冷却剂沿冷却剂流动方向流动，其中，冷却剂流动方向基本上平行于冷却体的表面延伸。例如，气态冷却剂是空气。特别地，功率模块在一侧由与冷却体的冷却肋流体连接的风扇冷却，使得来自风扇的空气基本上平行于冷却体的表面流经冷却体的冷却肋。这种配置价格低廉且可靠。
至少三个功率单元横向于冷却剂流动方向偏移地布置。通过偏移的布置实现热扩散，从而实现最佳散热。
另一个实施方式提出，功率单元的基底分别具有导热率至少为25W·m-1K-1，特别是至少为100W·m-lK-1，厚度d为25μm至400μm，特别是50μm至250μm的介电材料层。例如，介电材料层由氮化铝或氧化铝制成。特别地，这种薄陶瓷层的使用能够通过多个材料配合地连接在冷却体的表面上的基底实现，这导致功率半导体的导热连接得到改进。
另一个实施方式提出，至少两个功率单元具有共同的壳体。例如，这种共同的壳体由塑料制成。通过共同的壳体节省了结构空间。
另一个实施方式提出，至少两个功率单元特别是经由键合连接彼此导电连接。这种类型的键合连接例如通过键合线或带状接合件来产生。例如，相同的功率单元能够经由键合连接并联互连，以驱动更高的负载电流。通过这种模块化构造，能够以低成本、可扩展的方式制造功率模块。
另一个实施方式提出，由第一金属材料制成的冷却体在其表面上具有至少一个空腔，该空腔填充有第二金属材料，该第二金属材料具有比第一金属材料更高的导热率，其中，功率单元的至少一个基底直接与第二金属材料材料配合地连接。例如，第一金属材料是铝，第二金属材料是铜。通过填充有第二金属材料的空腔实现了功率单元到冷却体的改进的导热连接。
另一个实施方式提出，第二金属材料与冷却体的表面基本齐平。与冷却体表面齐平地设计的接合应理解为空腔的填充物的相对于冷却体表面平坦的并且基本上连续的接合。特别地，第二金属材料形成基本上无缝过渡到冷却体表面的平坦表面。通过这种平坦的实施方式实现了到冷却体的最佳导热连接，并且避免了与第二金属材料连接的基底中的机械和/或热应力。
另一个实施方式提出，至少两个功率单元中的每一个都分配有填充有第二金属材料的空腔。填充有第二金属材料的空腔例如被实施为岛，其具有比相应基底更大的面积并且在每个基底边缘处突出超过基底，从而实现功率单元到冷却体的改进的导热连接。
另一个实施方式提出，借助于增材方法将第二金属材料引入到至少一个空腔中。例如，借助于冷气喷涂将第二金属材料引入到至少一个空腔中。特别是与铸造工艺相比，增材方法允许空腔下方的第一金属材料的厚度非常低，因此冷却肋非常接近第二金属材料，第二金属材料具有比第一金属材料更高的导热率，从而实现到冷却流体的改进的导热连接。
另一个实施方式提出，功率单元布置在冷却体的表面上，使得功率半导体通过热扩散发生最佳的散热。功率单元在冷却体上特别是相对于冷却剂的流动方向被定向和间隔开，使得在功率单元的功率半导体中产生的废热(尤其大约点状地)尽可能均匀地分布在冷却体的表面上，从而发生热扩散。这种布置使功率模块在运行期间实现更高的鲁棒性。
另一个实施方式提出，功率单元之间的间距沿冷却剂流动方向和/或横向于冷却剂流动方向变化。例如，将一个功率单元相应地分配给三相系统的一个相。通过改变沿冷却剂流动方向和/或横向于冷却剂流动方向的间距来实现最佳散热。
另一个实施方式提出，功率单元之间的间距在冷却剂流动方向上增加。由于冷却剂在冷却剂流动方向上在功率单元下方被加热，因此通过距离的增加，能够实现高热的和低热的冷却剂的更好混合。此外，在间距增加的情况下，至少实现了更强的冷却，从而在冷却剂流动方向上增加的间距导致冷却体上的温度分布更均匀。
另一个实施方式提出，基本上平行于冷却体的表面延伸地布置电源板通过可自由定位的触点与功率单元连接，其中，可自由定位的触点与功率单元的相应的基底材料配合地连接。电源板应理解为印刷电路板，其例如实施为特别是多层的印刷电路板(PCB)。印刷电路板例如包含到功率单元的接口、驱动电路、控制电路和/或电容器。可自由定位的触点例如能够理解为通过其结构特性而能够自由地布置在基底上的管脚。例如，这样的结构特性是允许管脚(例如通过与基底的材料配合的连接)在没有壳体或其他稳定装置的情况下自由且稳定地布置在基底上的脚和/或摆动圆(Taumelkreis)，其使得在电源板上找到孔更加容易，并确保更高的稳定性和坚固性，例如在运行期间发生热膨胀的情况下。例如，可自由定位的触点被焊接到相应的基底上并借助于压配合连接与电源板连接。这种触点例如由铜或铜合金制成，以实现低电阻和高载流能力。由于触点能够自由定位，因此能够实现较短的电缆路径以及因此相关的低电感，这能够实现具有低阻抗和低损耗的功率单元。此外，能够以低成本且简单的方式实现设计功率单元的单个电池。
另一个实施方式提出，可自由定位的触点相对于力中心线不对称地实施。能够沿着力中心线将压入力引入可自由定位的触点。与现有技术相比，可自由定位的触点的不对称设计允许以较低的工具成本的同时实现更高的导体横截面，由此增加了触点的载流能力。
另一个实施方式提出，冷却体由硅含量高至1.0％、特别是高至0.6％的铝合金通过挤压制成。特别地，与铸造的冷却体相比，挤压的冷却体实现了改进的导热性，因为在挤压过程中能够使用低硅含量。由这种铝合金制成的挤压的冷却体导致改进的热扩散。
另一个实施方式提出，冷却肋布置成，使得冷却肋的长度与冷却肋之间的间距之比至少为10。这样的比例例如能够通过挤压工艺来实现，其中，实现最佳散热，特别是利用挤压的冷却肋。此外，这样的比例能够实现较短的冷却肋，例如长度为20mm至30mm的冷却肋，因此具有冷却体的功率模块能够在焊接炉中进行加工，特别是自动化地加工，这使得功率模块的生产更容易并且更便宜。
另一个实施方式提出，冷却体具有基板，该基板具有3.5mm至5mm、特别是3.5mm至4mm的基本恒定的第一厚度，其中，基板和冷却体的冷却肋一件式实施。这种例如能够通过挤压工艺制造的薄基板导致改进的散热能力。此外，如此薄的基板降低了功率模块的整体高度，使得功率模块能够与冷却体一起在焊炉中进行加工，特别是以自动化的方式，这使得功率模块的生产更容易并且更具成本效益。
附图说明
下面参照附图中所示的实施例来更详细地描述和解释本发明。
图中示出：
图1以截面图示出了功率模块的第一设计方案的示意图，
图2以俯视图示出了功率模块的第二设计方案的示意图，
图3以俯视图示出了功率模块的第三设计方案的示意图，
图4以俯视图示出了功率模块的第四设计方案的示意图，
图5以俯视图示出了功率模块的第五设计方案的示意图，
图6示出了功率模块的第六设计方案的三维示意图，
图7示出了可自由定位的触点的三维图，
图8示出了具有功率模块的变流器的示意图。
具体实施方式
下面解释的实施例是本发明的优选实施方式。在这些实施例中，所描述的实施方式的部件各自代表本发明的单独的、相互独立地考虑的特征，它们也相互独立地改进本发明并且因此也被单独地或以与所示的组合不同的另外组合被认为是本发明的组成部分。此外，所描述的实施方式还能够通过已经描述的本发明的其他特征来补充。
相同的参考符号在不同的图中具有相同的含义。
图1以截面图示出了功率模块2的第一设计方案的示意图。功率模块2例如具有两个功率单元4，功率单元分别包括功率半导体6和基底8。功率半导体6实施为晶体管10或二极管12，其中，晶体管10例如被实施为绝缘栅双极晶体管(IGBT)、金属氧化物半导体场效应晶体管(MOSFET)或场效应晶体管。例如，为每个晶体管10分配一个(特别是反并联的)二极管12。
两个功率单元4的基底8具有介电材料层14，该介电材料层包含陶瓷材料(例如氮化铝或氧化铝)或有机材料(例如聚酰胺)。介电材料层14具有25μm至400μm，特别是50μm至250μm的厚度d。此外，基底8在朝向功率半导体6的侧面16上相应地具有特别是结构化的上金属化部18，在背离功率半导体6的侧面20上具有下金属化部22，其中，基底8相应地直接与公共冷却体26的表面24材料配合地连接。上金属化层18和下金属化层22例如由铜制成。与冷却体26的材料配合的连接28通过焊接或烧结来形成。直接的材料配合的接触被理解为直接接触，包括用于产生材料连接的连接装置，例如粘合剂、焊料、烧结膏……，然而，附加的连接元件，例如附加的导体、键合线、间隔件、基板、导热膏……不包括在内。功率半导体6的朝向基底8的侧面30也通过焊接或烧结产生的材料配合的连接28与基底8的上金属化部18连接。功率半导体6的背离基底8的侧面32分别经由键合连接34与基底8的上金属化部18连接。键合连接34包括例如至少一个键合线、至少一个带状接合件和/或用于产生接合连接的其他装置。
图1中的晶体管10例如实施为IGBT，其在功率半导体6的朝向基底8的侧面30上的集电极触点C分别经由材料配合的连接28与基底8的上金属化层18连接。实施为IGBT的晶体管10的发射极触点E与其电绝缘并且经由键合连接34与基底8的上金属化层18连接。为清楚起见，晶体管10的栅极触点和二极管12的键合连接未在图1中示出。
基本上平行于冷却体26的表面24延伸的电源板36经由可自由定位的触点38与功率单元4，其中，可自由定位的触点38与功率单元4的相应基底8的上金属化部18材料配合地连接。可自由定位的触点38具有弹性弯曲部段并且例如通过压配合连接与电源板36连接。
冷却体26由第一金属材料39制成。空腔40被引导到其表面24上有并且填充有第二金属材料42，其中，第二金属材料42具有比第一金属材料39更高的导热率。例如，第一金属材料39为铝，第二金属材料42为铜。至少两个功率单元4中的每一个都分配有填充有第二金属材料42的空腔40，其中，第二金属材料42终止于与冷却体26的表面24基本平面齐平，并且相应基底8的下金属化部22与第二金属材料42材料配合地连接。特别地，第二金属材料42通过增材方法(例如通过冷气喷涂)被引入到空腔中。能够为每个功率单元4分配一个专用的传感器，特别是温度传感器，以便监控功率半导体6的温度。
图2以俯视图示出了功率模块2的第二设计方案的示意图。冷却体26例如通过冷却肋构造成，使得气态冷却剂沿冷却剂流动方向44流动，其中，冷却剂流动方向44基本上平行于冷却体26的表面24。气态冷却剂例如是空气，其经由风扇沿冷却剂流动方向44流过冷却体26的冷却肋。功率模块2例如具有两个功率单元4，它们在冷却体26的表面24上间隔开，使得功率半导体6通过热扩散被最佳地冷却。此外，功率单元4具有带有相同尺寸x、y的矩形底面。为了实现功率半导体6的最佳冷却，在横向于冷却剂流动方向44观察时，功率单元4被布置成偏移第一横向偏移量x1。此外，从冷却剂流动方向44看，功率单元4以纵向偏移量yl间隔开。由于冷却体26的表面24的尺寸，横向偏移量xl和纵向偏移量yl小于功率单元4的相应尺寸x、y。通过功率单元4与冷却体26的材料配合的连接，需要更少的装配点46。例如，每个功率单元4分配有两个装配点46，冷却体26具有至少两个装配点46，特别是至少四个装配点46。图2中功率模块2的另外的实施例对应于图1中的实施例。
图3以俯视图示出了功率模块2的第三设计方案的示意图，其中，两个功率单元4具有共同的壳体48。功率模块2的两个功率单元4经由键合连接34彼此导电连接，其中，键合连接34具有多个键合线、带状接合件和/或用于产生键合连接34的其他装置。例如，壳体48包括用于高电流应用的半桥电路，其中，两个半桥并联连接，以驱动更高的负载电流，其中两个半桥分别与功率单元4相关联。图3中功率模块2的另一个实施例对应于图2中的实施例。
图4以俯视图示出了功率模块2的第四设计方案的示意图，其中，功率模块2包括三个功率单元4。功率单元4之间的间距x1、x2、y1、y2在冷却剂流动方向44上并且横向于冷却剂流动方向44变化。为了确保功率单元4的基本均匀的冷却，它们被布置为，使得功率单元4之间的间距y1、y2在冷却剂流动方向44上增加。图3中功率模块2的另一个实施例对应于图2中的实施例。
图5以俯视图示出了功率模块2的第五设计方案的示意图，其中，除了改变功率单元4之间的间距x1、x2、y1、y2之外，通过在基底8上的组件的不同布置来实现额外的热扩散。特别地，具有可自由定位的触点38的功率半导体6被布置在相应的基底上，使得功率半导体4能够最佳地散热。能够改变相应的基底8的面积以获得更大的热扩散。图5中功率模块2的另外的实施例对应于图4中的实施例。
图6示出了功率模块2的第六设计方案的三维示意图，功率模块2包括三个功率单元4。功率单元4分别具有带有壳体盖50的壳体48，其中，壳体盖50在前面的功率单元4的情况下表示为透明的。冷却肋具有基板51，基板具有在冷却剂流动方向44上延伸地布置的冷却肋52，其中，冷却肋52与基板51连接，并且其中，基板51与冷却体26的冷却肋52一件式地实施。基板51具有3.5mm至5mm，特别是3.5mm至4mm的基本恒定的第一厚度d1，而肋具有第二厚度d2，其小于基板51的第一厚度d1。例如，冷却肋52横向于冷却剂流动方向44等距地布置。
冷却体26借助于挤压工艺由铝合金制成，该铝合金包含例如0.1％至1.0％，特别是0.1％至0.6％的硅含量。此外，冷却肋52被布置成使得冷却肋52的长度l与冷却肋52之间的间距a的比例至少为10:1/a≥10。图6中功率模块2的另一的实施例对应于图4中的实施例。
图7示出了可自由定位的触点38的三维图。可自由定位的触点38具有压入区53，该压入区能够与电源板36连接并且相对于力中心线54不对称地实施，其中，沿着力中心线54能够将压入力引入到可自由定位的触点38。用于例如在焊接夹具中对准可自由定位的触点38的定位辅助件56安置在中心部分55。可自由定位的触点38的下部58被实施为不对称的释放部段，其具有弹性屈服部段60和与其平行布置的止挡部62，其中，该止挡部与脚部64间隔开间隙宽度s。脚部64被配置用于材料配合的连接，例如通过焊接或烧结。特别地，可自由定位的触点38经由脚部64与基底8的上金属化层18材料配合地连接。弹性屈服部段60具有S形弹簧形状，该弹簧形状具有限定的弹性形变量。因此，在压入过程中或在运行期间出现的例如由振动引起的力能够在释放部段中被吸收。此外，通过弹性能够补偿公差。特别地，弹性屈服部段60的弹簧常数借助于通过冲压导致的横截面减小来产生。图7中可自由定位的触点38的另外的实施例对应于图1中的实施例。
图8示出了具有功率模块2的变流器66的示意图。变流器66能够包括多于一个的功率模块2。
综上所述，本发明涉及一种具有至少两个功率单元4的功率模块2，功率单元分别包括至少一个功率半导体6和基底8。为了减小功率模块所需的结构空间并改进散热而提出，至少一个功率半导体6分别与相应的基底8(特别是材料配合地)连接，其中，至少两个功率单元4的基底8分别直接地与公共的冷却体26的表面24材料配合地连接。

Claims (17)

1.一种具有至少两个功率单元(4)的功率模块(2)，所述功率单元分别包括至少一个功率半导体(6)和基底(8)，
其中，相应的所述至少一个功率半导体(6)与相应的所述基底(8)连接，尤其材料配合地连接，
其中，至少三个功率单元(4)的所述基底(8)分别直接地与公共冷却体(26)的表面(24)材料配合地连接，其中，所述冷却体(26)被配置为，使得气态冷却剂在冷却剂流动方向(44)上流动，
其中，所述冷却剂流动方向(44)基本上平行于所述冷却体(26)的所述表面(24)延伸，其中，所述功率单元(4)横向于所述冷却剂流动方向(44)偏移地布置，
其中，所述冷却体(26)具有沿所述冷却剂流动方向(44)延伸地布置的冷却肋(52)。
2.根据权利要求1所述的功率模块(2)，其中，所述功率单元(4)的所述基底(8)分别具有导热率至少为25W·m-1K-1，特别是至少为100W·m-lK-1，并且厚度d为25μm至400μm，特别是50μm至250μm的介电材料层(14)。
3.根据权利要求1或2中任一项所述的功率模块(2)，其中，所述基底(8)分别具有厚度(d)为25μm至400μm，特别是50μm至250μm的介电材料层(14)。
4.根据前述权利要求中任一项所述的功率模块(2)，其中，所述功率单元(4)中的至少两个功率单元具有共同的壳体(48)。
5.根据前述权利要求中任一项所述的功率模块(2)，其中，所述功率单元(4)中的至少两个功率单元特别是经由键合连接(34)彼此导电连接。
6.根据前述权利要求中任一项所述的功率模块(2)，其中，由第一金属材料(39)制成的所述冷却体(26)在所述冷却体的所述表面(24)上具有至少一个空腔(40)，所述空腔填充有第二金属材料(42)，所述第二金属材料具有比所述第一金属材料(39)更高的导热率，
其中，所述功率单元(4)的至少一个基底(8)直接与所述第二金属材料(42)材料配合地连接。
7.根据权利要求6所述的功率模块(2)，其中，所述第二金属材料(42)与所述冷却体(26)的所述表面(24)基本齐平。
8.根据权利要求6或7中的一项所述的功率模块(2)，其中，至少两个功率单元(4)中的每一个功率单元都分配有填充有所述第二金属材料(42)的空腔(40)。
9.根据权利要求6至8中任一项所述的功率模块(2)，其中，所述第二金属材料(42)通过增材方法被引入到至少一个所述空腔(40)中。
10.根据前述权利要求中任一项所述的功率模块(2)，其中，所述功率单元(4)之间的间距(x1，x2，y1，y2)沿所述冷却剂流动方向(44)和/或横向于所述冷却剂流动方向变化。
11.根据前述权利要求中任一项所述的功率模块(2)，其中，所述功率单元(4)之间的间距(y1，y2)在所述冷却剂流动方向(44)上增加。
12.根据前述权利要求中任一项所述的功率模块(2)，其中，基本上平行于所述冷却体(26)的所述表面(24)延伸地布置的电源板(36)经由可自由定位的触点(38)与所述功率单元(4)连接，
其中，所述可自由定位的触点(38)与所述功率单元(4)的相应的所述基底(8)材料配合地连接。
13.根据权利要求12所述的功率模块(2)，其中，所述可自由定位的触点(38)被实施为关于力中心线(54)不对称。
14.根据前述权利要求中任一项所述的功率模块(2)，其中，所述冷却体(26)由硅含量高至1.0％、特别是高至0.6％的铝合金通过挤压制成。
15.根据前述权利要求中任一项所述的功率模块(2)，其中，所述冷却肋(52)布置成，使得所述冷却肋(52)的长度(1)与所述冷却肋(52)之间的间距(a)之比至少为10。
16.根据前述权利要求中任一项所述的功率模块(2)，其中，所述冷却体(26)具有基板(51)，所述基板(51)具有3.5mm至5mm、特别是3.5mm至4mm的基本恒定的第一厚度d1，
其中，所述冷却体(26)的所述基板(51)和所述冷却肋(52)一件式实施。
17.一种变流器(66)，具有至少一个根据权利要求1至16中任一项所述的功率模块(2)。
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KR20230029914A (ko) 2023-03-03

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