CN115882811A - Surface acoustic wave filter packaging structure and preparation method thereof - Google Patents
Surface acoustic wave filter packaging structure and preparation method thereof Download PDFInfo
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- CN115882811A CN115882811A CN202310089304.9A CN202310089304A CN115882811A CN 115882811 A CN115882811 A CN 115882811A CN 202310089304 A CN202310089304 A CN 202310089304A CN 115882811 A CN115882811 A CN 115882811A
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- 238000004806 packaging method and process Methods 0.000 title claims abstract description 78
- 238000010897 surface acoustic wave method Methods 0.000 title claims abstract description 42
- 238000002360 preparation method Methods 0.000 title abstract description 11
- 229910052751 metal Inorganic materials 0.000 claims abstract description 193
- 239000002184 metal Substances 0.000 claims abstract description 193
- 239000000758 substrate Substances 0.000 claims abstract description 164
- 235000012431 wafers Nutrition 0.000 claims abstract description 89
- 238000000034 method Methods 0.000 claims abstract description 49
- 238000004021 metal welding Methods 0.000 claims abstract description 37
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims abstract description 27
- 239000010931 gold Substances 0.000 claims abstract description 25
- 229910052737 gold Inorganic materials 0.000 claims abstract description 25
- 239000000463 material Substances 0.000 claims description 43
- 238000002161 passivation Methods 0.000 claims description 25
- 238000004519 manufacturing process Methods 0.000 claims description 14
- 229920002120 photoresistant polymer Polymers 0.000 claims description 14
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 8
- 239000010949 copper Substances 0.000 claims description 8
- 229910052802 copper Inorganic materials 0.000 claims description 8
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 4
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 4
- 239000010936 titanium Substances 0.000 claims description 4
- 229910052719 titanium Inorganic materials 0.000 claims description 4
- WSMQKESQZFQMFW-UHFFFAOYSA-N 5-methyl-pyrazole-3-carboxylic acid Chemical compound CC1=CC(C(O)=O)=NN1 WSMQKESQZFQMFW-UHFFFAOYSA-N 0.000 claims description 3
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 claims description 3
- 238000005538 encapsulation Methods 0.000 claims description 2
- 239000004593 Epoxy Substances 0.000 claims 1
- 238000012858 packaging process Methods 0.000 abstract description 9
- 238000007747 plating Methods 0.000 abstract description 3
- 238000010586 diagram Methods 0.000 description 23
- 239000003822 epoxy resin Substances 0.000 description 7
- 229920000647 polyepoxide Polymers 0.000 description 7
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- 238000001465 metallisation Methods 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- 230000026683 transduction Effects 0.000 description 3
- 238000010361 transduction Methods 0.000 description 3
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- 238000007772 electroless plating Methods 0.000 description 1
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Abstract
The invention provides a packaging structure of a surface acoustic wave filter and a preparation method thereof, wherein the packaging structure comprises: a substrate; the wafer structure comprises a plurality of wafers positioned on one side of a substrate, wherein one side of part of the wafers, which is far away from the substrate, is provided with a metal welding pad; the metal column is positioned on one side, away from the wafer, of the metal welding pad; and the packaging substrate is positioned on one side of the metal column, which is far away from the substrate. According to the packaging structure of the surface acoustic wave filter, the metal welding pad and the metal cylinder are arranged on the part of the wafer on one side of the substrate, the metal cylinder is arranged on the side, away from the wafer, of the metal welding pad, and the wafer and the packaging substrate can be packaged on the basis of the metal cylinder; the packaging structure can utilize the existing equipment of a packaging factory to complete the preparation of the metal column, thereby avoiding the investment of a bonder in the packaging factory, not only reducing the cost, but also reducing the packaging process; in addition, the existing gold plating process is adopted to prepare the metal cylinder, so that the consumption of gold can be reduced, and the cost can be saved.
Description
Technical Field
The invention relates to the technical field of semiconductors, in particular to a packaging structure of a surface acoustic wave filter and a preparation method thereof, and especially relates to a packaging structure of a surface acoustic wave filter based on a metal column formed on a wafer bump and a preparation method thereof.
Background
With the rapid development of scientific technology, the surface acoustic wave filter has outstanding advantages in the aspects of signal acquisition processing, frequency control selection and the like, and is widely applied to the fields of mobile communication, aerospace, environmental monitoring, medical instruments and the like. The packaging method of the surface acoustic wave filter which is widely adopted at present is that a packaging factory bonds a gold ball on a salient point of a wafer material through a bonding machine, then bonds the wafer bonded with the gold ball on a substrate in an ultrasonic bonding mode, and then completes the packaging process of the surface acoustic wave filter in an epoxy resin injection molding mode.
However, since the packaging process requires a gold ball to be bonded on the bump of the wafer material, and the wafer is bonded to the substrate based on the gold ball, the process requires a gold wire to be bonded into the gold ball, which results in higher cost of the packaging process, and requires a gold ball bonder to be provided in the packaging factory.
Disclosure of Invention
In view of this, in order to solve the above problems, the present invention provides a package structure of a surface acoustic wave filter and a method for manufacturing the same, and the technical scheme is as follows:
a package structure of a surface acoustic wave filter, the package structure comprising:
a substrate;
the wafer structure comprises a plurality of wafers positioned on one side of a substrate, wherein one side of part of the wafers, which is far away from the substrate, is provided with a metal welding pad;
the metal cylinder is positioned on one side, away from the wafer, of the metal welding pad;
and the packaging substrate is positioned on one side of the metal column, which is far away from the substrate.
Preferably, in the above package structure of the surface acoustic wave filter, the metal post includes:
and in a first direction, a first metal layer, a second metal layer and a third metal layer which are sequentially positioned on one side of the metal welding pad, which is far away from the wafer, wherein the first direction is vertical to the plane of the substrate and points to the metal welding pad from the substrate.
Preferably, in the package structure of the surface acoustic wave filter, the wafer is an interdigital transducer;
the substrate is made of a lithium tantalate material or a lithium niobate material;
the first metal layer is made of a titanium material or a copper material;
the second metal layer is made of aluminum materials or copper materials, and the thickness of the second metal layer ranges from 10um to 20um;
the third metal layer is made of gold materials, and the thickness of the third metal layer ranges from 1um to 3um.
Preferably, in the above package structure for a surface acoustic wave filter, the package structure further includes:
the passivation layer is positioned on one side, provided with the metal welding pad, of the substrate and provided with a plurality of first hollow-out areas, the first hollow-out areas expose partial areas of a first surface of the metal welding pad, and the first surface is the surface of one side, away from the substrate, of the metal welding pad;
the first film layer and the packaging substrate form a packaging cavity, and the substrate is positioned in the packaging cavity;
and the second film layer is positioned on one side of the first film layer, which is far away from the packaging cavity.
Preferably, in the above package structure of the surface acoustic wave filter, the material of the second film layer is an epoxy resin material.
A method for preparing a packaging structure of a surface acoustic wave filter, which is used for preparing the packaging structure of any one of the above, and comprises the following steps:
providing a substrate;
arranging a plurality of wafers on one side of the substrate;
forming a metal welding pad on one side of part of the wafer, which is far away from the substrate;
forming a metal column on one side of the metal welding pad, which is far away from the wafer;
and packaging the metal column and the packaging substrate.
Preferably, in the above method for manufacturing a package structure of a surface acoustic wave filter, after forming a metal pad on a side of a part of the wafer away from the substrate, the method further includes:
forming a passivation layer on one side of the substrate, where the metal bonding pad is arranged, wherein the passivation layer is provided with a plurality of first hollow-out areas, the first hollow-out areas expose partial areas of a first surface of the metal bonding pad, and the first surface is a surface of the metal bonding pad, which is far away from one side of the substrate.
Preferably, in the above method for manufacturing a package structure of a surface acoustic wave filter, forming a metal column on a side of the metal pad away from the wafer includes:
forming a first metal layer on one side of the passivation layer, which faces away from the substrate, wherein the first metal layer completely covers the passivation layer and the first surface on the metal pad;
forming a third film layer on one side, away from the substrate, of the first metal layer, wherein the third film layer is provided with a plurality of second hollowed-out areas, an orthographic projection of the second hollowed-out areas on the substrate is completely overlapped with an orthographic projection of the metal welding pads on the substrate in a first direction, and the first direction is perpendicular to a plane where the substrate is located and is directed to the metal welding pads from the substrate;
sequentially forming a second metal layer and a third metal layer on the first metal layer in the second hollow-out region in the first direction;
and removing the third film layer and the first metal layer between the third film layer and the substrate.
Preferably, in the above method for manufacturing a package structure of a surface acoustic wave filter, the third film layer is a photoresist film layer, the third film layer is formed on a side of the first metal layer away from the substrate, and the third film layer has a plurality of second hollow areas, and includes:
and forming the photoresist film layer on one side of the first metal layer, which is far away from the substrate, wherein the photoresist film layer is provided with a plurality of second hollow-out areas.
Preferably, in the above method for manufacturing a package structure of a surface acoustic wave filter, after the package is performed by the metal post and the package substrate, the method further includes:
forming a first film layer, wherein the first film layer and the packaging substrate form a packaging cavity, and the substrate is positioned in the packaging cavity;
and forming a second film layer on one side of the first film layer far away from the packaging cavity.
Compared with the prior art, the invention has the following beneficial effects:
the invention provides a packaging structure of a surface acoustic wave filter and a preparation method thereof, wherein the packaging structure comprises: a substrate; the wafer structure comprises a plurality of wafers positioned on one side of a substrate, wherein one side of part of the wafers, which is far away from the substrate, is provided with a metal welding pad; the metal column is positioned on one side, away from the wafer, of the metal welding pad; and the packaging substrate is positioned on one side of the metal column, which is far away from the substrate. According to the packaging structure of the surface acoustic wave filter, the metal welding pad and the metal cylinder are arranged on the part of the wafer on one side of the substrate, the metal cylinder is arranged on the side, away from the wafer, of the metal welding pad, and the wafer and the packaging substrate can be packaged on the basis of the metal cylinder; the packaging structure can utilize the existing equipment of a packaging factory to complete the preparation of the metal column, thereby avoiding the investment of a bonder in the packaging factory, not only reducing the cost, but also reducing the packaging process; in addition, the existing gold plating process is adopted to prepare the metal column, so that the consumption of gold can be reduced, and the cost can be saved.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the provided drawings without creative efforts.
Fig. 1 is a schematic diagram of a package structure of a surface acoustic wave filter according to an embodiment of the present invention;
fig. 2 is a second schematic diagram of a package structure of another saw filter according to an embodiment of the present invention;
fig. 3 is a schematic flowchart of a method for manufacturing a package structure of a surface acoustic wave filter according to an embodiment of the present invention;
fig. 4 is a schematic structural diagram illustrating a plurality of wafers disposed on one side of a substrate according to an embodiment of the present invention;
fig. 5 is a schematic structural diagram after forming a metal pad according to an embodiment of the present invention;
fig. 6 is a schematic structural diagram illustrating a passivation layer formed according to an embodiment of the present invention;
fig. 7 is a schematic structural diagram illustrating a first metal layer formed according to an embodiment of the present invention;
FIG. 8 is a schematic diagram illustrating a structure after a third film layer is formed according to an embodiment of the present invention;
fig. 9 is a schematic structural diagram of a second metal layer and a third metal layer after formation according to an embodiment of the present invention;
fig. 10 is a schematic structural diagram of a structure after removing the third film layer and a part of the first metal layer according to an embodiment of the present invention;
fig. 11 is a schematic structural diagram of a package substrate encapsulated by a metal pillar according to an embodiment of the present invention;
fig. 12 is a second schematic flowchart of a manufacturing method of a package structure of a saw filter according to another embodiment of the present invention;
fig. 13 is a schematic structural diagram of a first film layer formed according to an embodiment of the invention.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Based on the content recorded in the background art, at present, a packaging factory generally bonds a gold ball on a bump of a wafer material when packaging a surface acoustic wave filter, and then packages the wafer and a substrate based on the gold ball, however, when bonding the gold ball, a bonder is required to bond the gold ball, and a gold wire is also required to be used, which results in higher cost of the packaging process, and the packaging factory is also required to have the gold ball bonder.
Based on the structure, the application provides the packaging structure of the surface acoustic wave filter and the preparation method thereof, and the packaging structure can not only avoid the adoption of a bonding machine, but also reduce the consumption of gold, thereby saving the cost.
In order to make the aforementioned objects, features and advantages of the present invention more comprehensible, the present invention is described in detail with reference to the accompanying drawings and the detailed description thereof.
Referring to fig. 1, fig. 1 is a schematic diagram of a package structure of a surface acoustic wave filter according to an embodiment of the present invention, and in conjunction with fig. 1, the package structure of the surface acoustic wave filter includes: a substrate 1; the wafer structure comprises a plurality of wafers 2 positioned on one side of a substrate 1, wherein a part of one side, away from the substrate 1, of each wafer 2 is provided with a metal welding pad 3; the metal column 4 is positioned on one side, away from the wafer 2, of the metal welding pad 3; and the packaging substrate 5 is positioned on one side, away from the substrate 1, of the metal column 4.
Specifically, in the embodiment of the present invention, the material of the substrate 1 includes, but is not limited to, a lithium tantalate material, a lithium niobate material, or other materials; in addition, the substrate 1 is a wafer substrate that has already been subjected to a CP test (Chip bonding), and is intended to ensure that unqualified wafer substrates are screened before packaging, thereby saving packaging cost.
It should be noted that, in the embodiment of the present invention, the wafer 2 is illustrated by taking an interdigital transducer as an example, and the wafer 2 can realize acoustic and electric transduction.
It should be noted that, in the embodiment of the present invention, three wafers 2 are disposed on the substrate 1 as an example, wherein two wafers 2 have metal pads 3 on a side away from the substrate 1, and the remaining wafer 2 does not have metal pads 3 on a side away from the substrate 1.
How to select the wafers 2 on the substrate 1 to set the corresponding metal pads 3 may be determined according to actual conditions, for example, the metal pads 3 are set on the adjacent wafers 2, or the metal pads 3 are set after spacing the wafers 2, or the metal pads 3 are set on the wafers 2 on the edge area of the substrate 1.
As can be seen from the above description, the package structure of the surface acoustic wave filter includes: a substrate 1; the wafer structure comprises a plurality of wafers 2 positioned on one side of a substrate 1, wherein a part of one side, away from the substrate 1, of each wafer 2 is provided with a metal welding pad 3; the metal column 4 is positioned on one side, away from the wafer 2, of the metal welding pad 3; and the packaging substrate 5 is positioned on one side of the metal column 4, which is far away from the substrate 1. According to the packaging structure of the surface acoustic wave filter, the metal welding pad 3 and the metal column 4 which is positioned on the side, away from the wafer 2, of the metal welding pad 3 are arranged on the part, positioned on one side of the substrate 1, of the wafer 2, and the wafer 2 and the packaging substrate 5 can be packaged on the basis of the metal column 4; the packaging structure can utilize the existing equipment of a packaging factory to finish the preparation of the metal column 4, thereby avoiding the investment of a bonding machine in the packaging factory, not only reducing the cost, but also reducing the packaging process; in addition, the metal column 4 is prepared by adopting the existing gold plating process, the consumption of gold can be reduced, and the cost can be saved.
Alternatively, in another embodiment of the present invention, as shown in fig. 1, the metal cylinder 4 includes: in a first direction a, the first metal layer 41, the second metal layer 42, and the third metal layer 43 are sequentially located on a side of the metal pad 3 away from the wafer 2, where the first direction a is perpendicular to a plane where the substrate 1 is located, and the substrate 1 points to the metal pad 3.
The first metal layer 41 is made of a titanium material or a copper material; the second metal layer 42 is made of aluminum material or copper material, and the thickness of the second metal layer 42 ranges from 10um to 20um; the third metal layer 43 is made of gold material, and the thickness of the third metal layer 43 ranges from 1um to 3um.
Specifically, in the embodiment of the present invention, the material of the first metal layer 41 includes, but is not limited to, a titanium material, a copper material, or the like; the material of the second metal layer 42 includes, but is not limited to, an aluminum material, a copper material, etc., the thickness of the second metal layer 42 in the first direction a may take any value within a range of 10um-20um, for example, the thickness of the second metal layer 42 may be 10um, 15um, 20um, etc., and the thickness of the second metal layer 42 may be adjusted as required; the material of the third metal layer 43 includes, but is not limited to, a gold material, etc., in the embodiment of the present invention, the material of the third metal layer 43 is a gold material, which is a preferred embodiment, the thickness of the third metal layer 43 in the first direction a may be any value within a range of 1um to 3um, for example, the thickness of the third metal layer 43 may be 1um, 1.5um, 3um, etc., and the thickness of the third metal layer 43 may be adjusted as needed.
In addition, in the embodiment of the present invention, as shown in fig. 1, a fourth metal layer 12 is disposed on a side of the package substrate 5 facing the substrate 1, and the fourth metal layer 12 is used as a metal pad on the package substrate 5 for encapsulating the metal pillar 4 and the package substrate 5, so that the metal pillar 4 is more stably encapsulated on the side of the package substrate 5.
Optionally, in another embodiment of the present invention, referring to fig. 2, fig. 2 is a schematic diagram of a second package structure of another surface acoustic wave filter provided in the embodiment of the present invention, where the package structure of the surface acoustic wave filter further includes:
the passivation layer 6 is located on one side, provided with the metal pad 3, of the substrate 1, the passivation layer 6 is provided with a plurality of first hollow-out regions, the first hollow-out regions expose partial regions of a first surface on the metal pad 3, and the first surface is a surface of one side, away from the substrate 1, of the metal pad 3.
Specifically, in the embodiment of the present invention, the passivation layer 6 covers the surface of the substrate 1 on the side where the wafer 2 is disposed, the passivation layer 6 covers the wafer 2, and the passivation layer 6 also covers the sidewall of the metal pad 3 and a part of the edge area of the surface of the metal pad 3 on the side away from the substrate 1.
The first film layer 7 and the packaging substrate 5 form a packaging cavity, and the substrate 1 is positioned in the packaging cavity; and the second film layer 8 is positioned on one side of the first film layer 7 far away from the packaging cavity.
Specifically, in the embodiment of the present invention, the first film layer 7 covers a surface of the substrate 1 on a side away from the package substrate 5 and a side wall of the substrate 1, and the first film layer 7 also partially covers an edge area of the package substrate 5 on a side facing the substrate 1; a packaging cavity formed by the first film layer 7 and the packaging substrate 5 can play a role in sealing and protecting the wafer 2; in addition, the material of the second film layer 8 includes, but is not limited to, an epoxy resin material, and the epoxy resin material has not only excellent physical properties, but also high strength, low shrinkage, good corrosion resistance, and high insulation.
Optionally, based on the foregoing embodiment of the present invention, another embodiment of the present invention further provides a method for manufacturing a package structure of a surface acoustic wave filter, where the method is used to manufacture the package structure of the surface acoustic wave filter in the foregoing embodiment, and referring to fig. 3, fig. 3 is one of flow diagrams of a method for manufacturing a package structure of a surface acoustic wave filter provided in the foregoing embodiment of the present invention, and with reference to fig. 3, the method for manufacturing a package structure of a surface acoustic wave filter includes:
s100, a substrate 1 is provided.
Specifically, in step S100, the substrate 1 is a qualified wafer substrate that has already been subjected to the CP test.
And S200, arranging a plurality of wafers 2 on one side of the substrate 1.
Specifically, in step S200, as shown in fig. 4, fig. 4 is a schematic structural diagram of a substrate with a plurality of wafers disposed on one side thereof according to an embodiment of the present invention, where the wafer 2 includes, but is not limited to, an interdigital transducer, and the wafer 2 can perform acoustic and electrical transduction.
And S300, forming a metal bonding pad 3 on one side of part of the wafer 2, which is far away from the substrate 1.
Specifically, in the step S300, as shown in fig. 5, fig. 5 is a schematic structural diagram after forming a metal pad according to an embodiment of the present invention, and the wafer 2 in fig. 5 is illustrated by taking an interdigital transducer as an example, which can realize acoustic and electrical transduction.
It should be noted that, in the embodiment of the present invention, three wafers 2 are disposed on the substrate 1 as an example, wherein two wafers 2 have metal pads 3 on a side away from the substrate 1, and the remaining wafer 2 does not have metal pads 3 on a side away from the substrate 1.
How to select the wafers 2 on the substrate 1 to set the corresponding metal pads 3 may be determined according to actual conditions, for example, the metal pads 3 are set on the adjacent wafers 2, or the metal pads 3 are set after spacing the wafers 2, or the metal pads 3 are set on the wafers 2 on the edge area of the substrate 1.
S400, forming a passivation layer 6 on the side of the substrate 1 where the metal pad 3 is disposed, where the passivation layer 6 has a plurality of first hollow areas 9, and the first hollow areas 9 expose partial areas of a first surface on the metal pad 3, where the first surface is a surface of the metal pad 3 on a side away from the substrate 1.
Specifically, in this step S400, as shown in fig. 6, fig. 6 is a schematic structural diagram of a passivation layer formed according to an embodiment of the present invention, where the passivation layer 6 covers a surface of the substrate 1 on a side where the wafer 2 is disposed, the passivation layer 6 covers the wafer 2, and the passivation layer 6 further covers a sidewall of the metal pad 3 and a part of an edge region of the surface of the metal pad 3 on a side away from the substrate 1.
And S500, forming a metal column 4 on one side of the metal pad 3 departing from the wafer 2.
Specifically, in step S500, the embodiment of the present invention provides an optional implementation manner for the implementation process of forming the metal pillar 4 on the side of the metal pad 3 away from the wafer 2, and the detailed description is as follows:
in a first step, a first metal layer 41 is formed on a side of the passivation layer 6 facing away from the substrate 1, and the first metal layer 41 completely covers the passivation layer 6 and the first surface on the metal pad 3.
Specifically, in the embodiment of the present invention, as shown in fig. 7, fig. 7 is a schematic structural diagram of a first metal layer formed according to an embodiment of the present invention, where the first metal layer 41 is formed by sputtering, and the first metal layer 41 covers a side of the passivation layer 6 away from the substrate 1 and the first surface of the metal pad 3.
Secondly, forming a third film layer 10 on a side of the first metal layer 41 away from the substrate 1, where the third film layer 10 has a plurality of second hollow areas 11, and in a first direction a, an orthographic projection of the second hollow areas 11 on the substrate 1 completely coincides with an orthographic projection of the metal pad 3 on the substrate 1, and the first direction a is perpendicular to a plane where the substrate 1 is located and is directed to the metal pad 3 from the substrate 1.
The third film 10 is a photoresist film, the third film 10 is formed on a side of the first metal layer 41 away from the substrate 1, and the third film 10 has a plurality of second hollow areas 11, including: and forming the photoresist film layer on the side of the first metal layer 41 departing from the substrate 1, wherein the photoresist film layer is provided with a plurality of second hollow-out regions 11.
Specifically, in the embodiment of the present invention, as shown in fig. 8, fig. 8 is a schematic structural diagram after a third film layer is formed, where a photoresist film layer is formed on a side of the first metal layer 41 away from the substrate 1, and then the photoresist film layer is subjected to a pre-baking process to primarily cure the photoresist film layer, and the photoresist film layer is selectively irradiated by exposure to define the position of the metal cylinder 4, and after the exposure is finished, a developing solution is used for developing, so that the photoresist film layer forms a plurality of second hollow areas 11 at the position where the metal cylinder 4 is defined.
And a third step of sequentially forming a second metal layer 42 and a third metal layer 43 on the first metal layer 41 in the second hollow area 11 in the first direction a.
Specifically, in the embodiment of the present invention, as shown in fig. 9, fig. 9 is a schematic structural diagram after forming a second metal layer and a third metal layer according to the embodiment of the present invention, and a second metal layer 42 and a third metal layer 43 may be sequentially formed on a first metal layer 41 in a second hollow-out area 11 in a metal deposition manner; the implementation process of sequentially forming the second metal layer 42 and the third metal layer 43 by using a metal deposition method includes, but is not limited to, sequentially forming the second metal layer 42 and the third metal layer 43 on the first metal layer 41 in the second hollow area 11 by using an electroless plating process or an evaporation process.
Fourthly, removing the third film layer 10 and the first metal layer 41 between the third film layer 10 and the substrate 1.
Specifically, in the embodiment of the present invention, as shown in fig. 10, fig. 10 is a schematic structural diagram of the third film Layer and a part of the first metal Layer removed according to the embodiment of the present invention, which includes, but is not limited to, removing the first metal Layer 41 by using an RDL (ReDistribution Layer), in the implementation process of removing the first metal Layer 41, the first metal Layer 41 between the metal pad 3 and the second metal Layer 42 needs to be retained, and the rest of the first metal Layer 41 needs to be removed; by adopting the RDL mode, the originally designed chip circuit connection point position can be changed through a wafer level metal wiring process and a bump process, so that the chip can be suitable for different packaging forms; and the design of adopting RDL can replace the design of some chip internal circuits to reduce design cost, can also support more pin quantity, can also make the I/O contact interval more nimble, bump area bigger, thereby make the component reliability higher.
It should be noted that, the first metal layer 41 is also removed while the third film layer 10 is removed, and it is not necessary to remove the third film layer 10 and then remove the first metal layer 41 or remove the first metal layer 41 and then remove the third film layer 10, so that the implementation process of removing the third film layer 10 and the first metal layer 41 between the third film layer 10 and the substrate 1 is simpler.
As can be seen from the above description, the metal deposition technique adopted in the implementation process of forming the metal column 4 in the embodiment of the present invention can be operated by using the existing equipment in the packaging factory, so as to avoid using the gold ball bonder to bond the alloy balls, and indirectly shorten the packaging process flow; and the method can also reduce the usage amount of gold, thereby reducing the cost of the packaging process.
And S600, packaging the metal column 4 and the packaging substrate 5.
Specifically, in step S600, as shown in fig. 11, fig. 11 is a schematic structural diagram of a package substrate encapsulated by a metal pillar according to an embodiment of the present invention, including but not limited to connecting the metal pillar 4 and the package substrate 5 by ultrasonic bonding, a fourth metal layer 12 may be further disposed on a side of the package substrate 5 facing the substrate 1, and the fourth metal layer 12 is used as a metal pad on the package substrate 5, so that the metal pillar 4 can be welded to the package substrate 5 in the process of ultrasonic bonding, so that the metal pillar 4 is more stably packaged on the side of the package substrate 5.
Optionally, in another embodiment of the present invention, referring to fig. 12, fig. 12 is a second flowchart of a manufacturing method of another surface acoustic wave filter packaging structure provided in the embodiment of the present invention, after the step S600 packages the metal post 4 and the packaging substrate 5, the manufacturing method of the surface acoustic wave filter packaging structure further includes:
s700, forming a first film layer 7, wherein the first film layer 7 and the packaging substrate 5 form a packaging cavity, and the substrate 1 is located in the packaging cavity.
Specifically, in step S700, as shown in fig. 13, fig. 13 is a schematic structural diagram after a first film layer is formed, where the first film layer 7 covers a surface of the substrate 1 on a side away from the package substrate 5 and a side wall of the substrate 1, and the first film layer 7 also partially covers an edge area of the package substrate 5 on a side facing the substrate 1.
And S800, forming a second film layer 8 on one side of the first film layer 7, which is far away from the packaging cavity.
Specifically, in this step S800, as shown in fig. 2, the second film layer 8 is an epoxy resin layer, and the embodiment of the invention includes, but is not limited to, forming the epoxy resin layer on a side of the first film layer 7 away from the encapsulation cavity by injecting epoxy resin; in addition, after the second film layer 8 is formed, it is necessary to cut it to complete the package of the surface acoustic wave filter.
The package structure of the surface acoustic wave filter and the preparation method thereof provided by the invention are described in detail, and the principle and the implementation mode of the invention are explained by applying specific examples, and the description of the examples is only used for helping to understand the method and the core idea of the invention; meanwhile, for a person skilled in the art, according to the idea of the present invention, there may be variations in the specific embodiments and the application scope, and in summary, the content of the present specification should not be construed as a limitation to the present invention.
It should be noted that, in the present specification, the embodiments are all described in a progressive manner, each embodiment focuses on differences from other embodiments, and the same and similar parts among the embodiments may be referred to each other. The device disclosed by the embodiment corresponds to the method disclosed by the embodiment, so that the description is simple, and the relevant points can be referred to the method part for description.
It is further noted that, herein, relational terms such as first and second, and the like may be used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Also, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include or include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrases "comprising one of 8230; \8230;" 8230; "does not exclude the presence of additional like elements in a process, method, article, or apparatus that comprises the element.
The previous description of the disclosed embodiments is provided to enable any person skilled in the art to make or use the present invention. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the generic principles defined herein may be applied to other embodiments without departing from the spirit or scope of the invention. Thus, the present invention is not intended to be limited to the embodiments shown herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.
Claims (10)
1. A package structure of a surface acoustic wave filter, the package structure comprising:
a substrate;
the wafer structure comprises a plurality of wafers positioned on one side of a substrate, wherein one side of part of the wafers, which is far away from the substrate, is provided with a metal welding pad;
the metal cylinder is positioned on one side, away from the wafer, of the metal welding pad;
and the packaging substrate is positioned on one side of the metal column, which is far away from the substrate.
2. The package structure of claim 1, wherein the metal pillar comprises:
and in a first direction, a first metal layer, a second metal layer and a third metal layer which are sequentially positioned on one side of the metal welding pad, which is far away from the wafer, wherein the first direction is vertical to the plane of the substrate and points to the metal welding pad from the substrate.
3. The package structure of claim 2, wherein the wafer is an interdigital transducer;
the substrate is made of a lithium tantalate material or a lithium niobate material;
the first metal layer is made of a titanium material or a copper material;
the second metal layer is made of aluminum materials or copper materials, and the thickness of the second metal layer ranges from 10um to 20um;
the third metal layer is made of gold materials, and the thickness of the third metal layer ranges from 1um to 3um.
4. The package structure of claim 1, further comprising:
the passivation layer is positioned on one side, provided with the metal welding pad, of the substrate and provided with a plurality of first hollow-out areas, the first hollow-out areas expose partial areas of a first surface of the metal welding pad, and the first surface is the surface of one side, away from the substrate, of the metal welding pad;
the first film layer and the packaging substrate form a packaging cavity, and the substrate is positioned in the packaging cavity;
and the second film layer is positioned on one side of the first film layer, which is far away from the packaging cavity.
5. The package structure of claim 4, wherein the material of the second film layer is an epoxy material.
6. A method for manufacturing a package structure for a surface acoustic wave filter, characterized by comprising the steps of:
providing a substrate;
arranging a plurality of wafers on one side of the substrate;
forming a metal welding pad on one side of part of the wafer, which is far away from the substrate;
forming a metal column on one side of the metal welding pad, which is far away from the wafer;
and packaging the metal column and the packaging substrate.
7. The method of claim 6, wherein after forming the metal pads on a side of the portion of the wafer facing away from the substrate, the method further comprises:
forming a passivation layer on one side of the substrate, where the metal pad is arranged, where the passivation layer has a plurality of first hollow-out regions, where the first hollow-out regions expose partial regions of a first surface of the metal pad, and the first surface is a surface of the metal pad on a side away from the substrate.
8. The method of claim 7, wherein forming metal pillars on a side of the metal pads facing away from the wafer comprises:
forming a first metal layer on one side of the passivation layer, which is far away from the substrate, wherein the first metal layer completely covers the passivation layer and the first surface on the metal welding pad;
forming a third film layer on one side, away from the substrate, of the first metal layer, wherein the third film layer is provided with a plurality of second hollowed-out areas, an orthographic projection of the second hollowed-out areas on the substrate is completely overlapped with an orthographic projection of the metal welding pads on the substrate in a first direction, and the first direction is perpendicular to a plane where the substrate is located and is directed to the metal welding pads from the substrate;
sequentially forming a second metal layer and a third metal layer on the first metal layer in the second hollow-out region in the first direction;
and removing the third film layer and the first metal layer between the third film layer and the substrate.
9. The method according to claim 8, wherein the third film layer is a photoresist film layer, and the third film layer is formed on a side of the first metal layer away from the substrate, and has a plurality of second hollow areas, and the method includes:
and forming the photoresist film layer on one side of the first metal layer, which is far away from the substrate, wherein the photoresist film layer is provided with a plurality of second hollow-out areas.
10. The method of claim 6, wherein after encapsulating with an encapsulation substrate via the metal pillar, the method further comprises:
forming a first film layer, wherein the first film layer and the packaging substrate form a packaging cavity, and the substrate is positioned in the packaging cavity;
and forming a second film layer on one side of the first film layer far away from the packaging cavity.
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| CN202310089304.9A CN115882811A (en) | 2023-02-09 | 2023-02-09 | Surface acoustic wave filter packaging structure and preparation method thereof |
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| CN202310089304.9A CN115882811A (en) | 2023-02-09 | 2023-02-09 | Surface acoustic wave filter packaging structure and preparation method thereof |
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