CN115881868B - 发光器件 - Google Patents

发光器件

Info

Publication number
CN115881868B
CN115881868B CN202211613353.XA CN202211613353A CN115881868B CN 115881868 B CN115881868 B CN 115881868B CN 202211613353 A CN202211613353 A CN 202211613353A CN 115881868 B CN115881868 B CN 115881868B
Authority
CN
China
Prior art keywords
layer
light emitting
emitting device
semiconductor layer
composition
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN202211613353.XA
Other languages
English (en)
Chinese (zh)
Other versions
CN115881868A (zh
Inventor
金明姬
洪埩熀
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Suzhou Liyu Semiconductor Co ltd
Original Assignee
Suzhou Liyu Semiconductor Co ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from KR1020160046356A external-priority patent/KR102486036B1/ko
Priority claimed from KR1020160049327A external-priority patent/KR20170120878A/ko
Application filed by Suzhou Liyu Semiconductor Co ltd filed Critical Suzhou Liyu Semiconductor Co ltd
Publication of CN115881868A publication Critical patent/CN115881868A/zh
Application granted granted Critical
Publication of CN115881868B publication Critical patent/CN115881868B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • H10H20/812—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions within the light-emitting regions, e.g. having quantum confinement structures
    • A—HUMAN NECESSITIES
    • A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
    • A61N—ELECTROTHERAPY; MAGNETOTHERAPY; RADIATION THERAPY; ULTRASOUND THERAPY
    • A61N5/00—Radiation therapy
    • A61N5/06—Radiation therapy using light
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/858—Means for heat extraction or cooling
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations

Landscapes

  • Health & Medical Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Biomedical Technology (AREA)
  • Pathology (AREA)
  • Nuclear Medicine, Radiotherapy & Molecular Imaging (AREA)
  • Radiology & Medical Imaging (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Animal Behavior & Ethology (AREA)
  • General Health & Medical Sciences (AREA)
  • Public Health (AREA)
  • Veterinary Medicine (AREA)
  • Led Devices (AREA)
  • Led Device Packages (AREA)
CN202211613353.XA 2016-04-15 2017-04-14 发光器件 Active CN115881868B (zh)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
KR10-2016-0046356 2016-04-15
KR1020160046356A KR102486036B1 (ko) 2016-04-15 2016-04-15 자외선 발광소자, 자외선 발광소자 제조방법 및 발광소자 패키지
KR1020160049327A KR20170120878A (ko) 2016-04-22 2016-04-22 발광모듈 및 의료기기
KR10-2016-0049327 2016-04-22
CN201780023885.9A CN109075160B (zh) 2016-04-15 2017-04-14 发光器件、发光器件封装和发光模块
PCT/KR2017/004065 WO2017179944A1 (ko) 2016-04-15 2017-04-14 발광소자, 발광소자 패키지 및 발광모듈

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
CN201780023885.9A Division CN109075160B (zh) 2016-04-15 2017-04-14 发光器件、发光器件封装和发光模块

Publications (2)

Publication Number Publication Date
CN115881868A CN115881868A (zh) 2023-03-31
CN115881868B true CN115881868B (zh) 2026-02-03

Family

ID=60042189

Family Applications (2)

Application Number Title Priority Date Filing Date
CN202211613353.XA Active CN115881868B (zh) 2016-04-15 2017-04-14 发光器件
CN201780023885.9A Active CN109075160B (zh) 2016-04-15 2017-04-14 发光器件、发光器件封装和发光模块

Family Applications After (1)

Application Number Title Priority Date Filing Date
CN201780023885.9A Active CN109075160B (zh) 2016-04-15 2017-04-14 发光器件、发光器件封装和发光模块

Country Status (5)

Country Link
US (1) US10644194B2 (https=)
EP (1) EP3444841B1 (https=)
JP (2) JP7003058B2 (https=)
CN (2) CN115881868B (https=)
WO (1) WO2017179944A1 (https=)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AU2017214317B2 (en) 2016-02-05 2019-08-22 Boston Scientfic Neuromodulation Corporation Implantable optical stimulation lead
WO2018151157A1 (ja) * 2017-02-17 2018-08-23 Ｄｏｗａエレクトロニクス株式会社 深紫外発光素子およびその製造方法
JP6486401B2 (ja) 2017-03-08 2019-03-20 日機装株式会社 半導体発光素子および半導体発光素子の製造方法
JP6438542B1 (ja) * 2017-07-27 2018-12-12 日機装株式会社 半導体発光素子
CN109473510B (zh) * 2017-09-07 2022-05-13 佳能株式会社 发光晶闸管、发光晶闸管阵列、曝光头和图像形成设备
US11984535B2 (en) * 2018-11-05 2024-05-14 Dowa Electronics Materials Co., Ltd. III-nitride semiconductor light-emitting device comprising barrier layers and well layers and method of producing the same
TWD201271S (zh) * 2018-11-08 2019-12-01 晶元光電股份有限公司 發光二極體之部分
US11552217B2 (en) * 2018-11-12 2023-01-10 Epistar Corporation Semiconductor device
CN111725369B (zh) * 2019-03-20 2021-11-12 隆达电子股份有限公司 发光装置
TWD204008S (zh) * 2019-03-22 2020-04-11 晶元光電股份有限公司 發光裝置之部分
US11424299B2 (en) * 2019-04-08 2022-08-23 Electronics And Telecommunications Research Institute Pressure sensitive display device having touch electrode and light emitting layer
CN110581205A (zh) * 2019-08-28 2019-12-17 映瑞光电科技(上海)有限公司 GaN基发光二极管外延结构及其制备方法
KR102848810B1 (ko) * 2020-06-01 2025-08-25 삼성디스플레이 주식회사 화소, 그 제조 방법 및 그를 포함하는 표시 장치
US12427332B2 (en) 2021-04-08 2025-09-30 Boston Scientific Neuromodulation Corporation Photobiomodulation system and delivery device and methods of making and using
CN115832143A (zh) * 2021-09-24 2023-03-21 厦门三安光电有限公司 倒装发光二极管和发光装置
JP7405902B2 (ja) * 2022-05-20 2023-12-26 日機装株式会社 窒化物半導体発光素子
EP4565319A1 (en) * 2022-08-22 2025-06-11 Boston Scientific Neuromodulation Corporation Photobiomodulation systems including an electrode disposed on or over a light emitter and methods of making and using
EP4398258A3 (en) 2023-01-04 2024-08-28 Boston Scientific Neuromodulation Corporation Systems and methods incorporating a light therapy user interface for optical modulation
CN115863502B (zh) * 2023-02-21 2024-03-19 江西兆驰半导体有限公司 一种led外延片、外延生长方法及led芯片
WO2024181858A1 (ko) * 2023-02-28 2024-09-06 연세대학교 산학협력단 2d 발광 박막, 이의 제조방법, 이를 포함하는 발광 소자 및 디스플레이 패널

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102623599A (zh) * 2012-04-25 2012-08-01 华灿光电股份有限公司 渐变电子阻挡层的紫外光氮化镓半导体发光二极管

Family Cites Families (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3778765B2 (ja) * 2000-03-24 2006-05-24 三洋電機株式会社 窒化物系半導体素子およびその製造方法
US7115896B2 (en) 2002-12-04 2006-10-03 Emcore Corporation Semiconductor structures for gallium nitride-based devices
JP5255759B2 (ja) * 2005-11-14 2013-08-07 パロ・アルト・リサーチ・センター・インコーポレーテッド 半導体デバイス用超格子歪緩衝層
US20080137701A1 (en) * 2006-12-12 2008-06-12 Joseph Michael Freund Gallium Nitride Based Semiconductor Device with Reduced Stress Electron Blocking Layer
JP5083817B2 (ja) 2007-11-22 2012-11-28 シャープ株式会社 Ｉｉｉ族窒化物半導体発光素子及びその製造方法
JP4592742B2 (ja) 2007-12-27 2010-12-08 Ｄｏｗａエレクトロニクス株式会社 半導体材料、半導体材料の製造方法及び半導体素子
KR101018088B1 (ko) 2008-11-07 2011-02-25 삼성엘이디 주식회사 질화물 반도체 소자
KR101636182B1 (ko) * 2010-02-24 2016-07-04 고쿠리쓰 겐큐 가이하쓰 호징 리가가쿠 겐큐소 질화물 반도체 다중 양자 장벽을 갖는 발광 소자 및 그 제조 방법
JP5143171B2 (ja) * 2010-03-17 2013-02-13 株式会社東芝 半導体発光素子及びその製造方法
TWI557936B (zh) * 2010-04-30 2016-11-11 美國波士頓大學信託會 具能帶結構位變動之高效率紫外光發光二極體
TWI566429B (zh) * 2010-07-09 2017-01-11 Ｌｇ伊諾特股份有限公司 發光裝置
JP5508244B2 (ja) 2010-11-15 2014-05-28 シチズンホールディングス株式会社 半導体発光装置の製造方法
JP5665676B2 (ja) 2011-07-11 2015-02-04 Ｄｏｗａエレクトロニクス株式会社 Ｉｉｉ族窒化物エピタキシャル基板およびその製造方法
KR101843420B1 (ko) * 2011-08-12 2018-05-14 엘지이노텍 주식회사 발광소자, 발광 소자 제조방법 및 발광 소자 패키지
EP2800605B2 (en) 2012-01-03 2022-11-09 BeneSol, Inc. Phototherapeutic apparatus for focused uvb radiation and vitamin d synthesis and associated systems
WO2013147552A1 (en) 2012-03-29 2013-10-03 Seoul Opto Device Co., Ltd. Near uv light emitting device
KR102246648B1 (ko) 2014-07-29 2021-04-30 서울바이오시스 주식회사 자외선 발광 다이오드
US10177273B2 (en) 2012-03-29 2019-01-08 Seoul Viosys Co., Ltd. UV light emitting device
KR101915213B1 (ko) * 2012-05-17 2018-11-06 엘지이노텍 주식회사 발광소자
KR20130141290A (ko) 2012-06-15 2013-12-26 삼성전자주식회사 초격자 구조체 및 이를 포함한 반도체 소자
US9437787B2 (en) 2012-06-18 2016-09-06 Sharp Kabushiki Kaisha Semiconductor light emitting device
KR20140022136A (ko) * 2012-08-13 2014-02-24 삼성전자주식회사 반도체 발광소자
CN102931306B (zh) * 2012-11-06 2016-02-17 华灿光电股份有限公司 一种发光二极管外延片
KR20140117117A (ko) 2013-03-26 2014-10-07 인텔렉추얼디스커버리 주식회사 질화물 반도체 발광소자
KR20150015760A (ko) 2013-08-01 2015-02-11 서울바이오시스 주식회사 발광 소자 제조용 템플릿 및 자외선 발광소자 제조 방법
KR101804493B1 (ko) * 2013-09-03 2017-12-04 센서 일렉트로닉 테크놀로지, 인크 변조 도핑을 갖는 광전자 디바이스
WO2015042552A1 (en) 2013-09-23 2015-03-26 Sensor Electronic Technology , Inc. Group iii nitride heterostructure for optoelectronic device
JP6621990B2 (ja) 2014-01-16 2019-12-18 スタンレー電気株式会社 紫外発光ダイオード
KR102261948B1 (ko) 2014-06-30 2021-06-08 엘지이노텍 주식회사 발광소자 및 이를 구비하는 조명 시스템
JP2016039362A (ja) 2014-08-07 2016-03-22 株式会社トクヤマ 紫外線光源
KR102227772B1 (ko) 2014-08-19 2021-03-16 삼성전자주식회사 반도체 발광소자
CN107134514B (zh) 2017-05-10 2019-09-10 华灿光电股份有限公司 一种发光二极管的外延片及其制造方法

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102623599A (zh) * 2012-04-25 2012-08-01 华灿光电股份有限公司 渐变电子阻挡层的紫外光氮化镓半导体发光二极管

Also Published As

Publication number Publication date
CN109075160A (zh) 2018-12-21
CN115881868A (zh) 2023-03-31
EP3444841A1 (en) 2019-02-20
EP3444841B1 (en) 2020-04-08
JP7270300B2 (ja) 2023-05-10
JP2019514224A (ja) 2019-05-30
JP2022043283A (ja) 2022-03-15
US20190140137A1 (en) 2019-05-09
WO2017179944A1 (ko) 2017-10-19
JP7003058B2 (ja) 2022-02-04
EP3444841A4 (en) 2019-04-03
CN109075160B (zh) 2022-12-30
US10644194B2 (en) 2020-05-05

Similar Documents

Publication Publication Date Title
CN115881868B (zh) 发光器件
KR102237154B1 (ko) 발광 소자 및 이를 구비한 라이트 유닛
CN115101641A (zh) 半导体器件和包括半导体器件的半导体器件封装
KR20160076124A (ko) 발광 소자 및 이를 구비한 발광 소자 패키지
US8269234B2 (en) Semiconductor light-emitting device
KR102355604B1 (ko) 발광 소자 및 이를 구비한 라이트 유닛
US10546974B2 (en) Light-emitting device
KR20170120878A (ko) 발광모듈 및 의료기기
US10816143B2 (en) Ultraviolet light-emitting device and lighting system
EP3376546A1 (en) Ultraviolet light-emitting element and light-emitting element package
KR20170011839A (ko) 자외선 발광소자 및 발광소자 패키지
KR20160115217A (ko) 발광소자, 발광소자 패키지, 및 이를 포함하는 조명시스템
KR102486036B1 (ko) 자외선 발광소자, 자외선 발광소자 제조방법 및 발광소자 패키지
KR102251238B1 (ko) 자외선 발광소자 및 조명시스템
KR102200075B1 (ko) 자외선 발광소자 및 조명시스템
KR102353844B1 (ko) 자외선 발광소자 및 발광소자 패키지
KR102342999B1 (ko) 자외선 발광소자 및 조명시스템
KR102322696B1 (ko) 자외선 발광소자 및 발광소자 패키지
KR102608142B1 (ko) 반도체 소자 및 이를 구비한 광원 모듈
KR102376672B1 (ko) 발광소자 및 발광소자 패키지
KR102308720B1 (ko) 자외선 발광소자 및 조명시스템
KR102350784B1 (ko) 자외선 발광소자 및 조명시스템
KR102261950B1 (ko) 발광소자 및 조명시스템
KR20150142741A (ko) 발광소자 및 조명시스템
KR20150142235A (ko) 발광소자 및 조명시스템

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant