CN115865023A - Chip-scale wave filter packaging structure and packaging method thereof - Google Patents
Chip-scale wave filter packaging structure and packaging method thereof Download PDFInfo
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- CN115865023A CN115865023A CN202211657225.5A CN202211657225A CN115865023A CN 115865023 A CN115865023 A CN 115865023A CN 202211657225 A CN202211657225 A CN 202211657225A CN 115865023 A CN115865023 A CN 115865023A
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Abstract
The invention discloses a chip-level wave filter packaging structure and a packaging method thereof, belonging to the technical field of wave filter packaging, the packaging structure comprises a packaging substrate and a wave filter chip, wherein the wave filter chip is inversely arranged on the upper surface of the packaging substrate, the surface of the packaging substrate is also provided with a conductive supporting surrounding frame for supporting a substrate, the conductive supporting surrounding frame surrounds metal salient points to form a cavity, a metal column is also arranged inside the packaging substrate, the conductive supporting surrounding frame is connected with a grounding electrode of the substrate through the metal column, the packaging structure also comprises at least one layer of metal covering layer, and the metal covering layer is covered on the surfaces of the wave filter chip, the conductive supporting surrounding frame and the packaging substrate. The packaging method can form the packaging structure, and the packaging structure has better air tightness, better heat dissipation effect and better anti-interference performance.
Description
Technical Field
The invention relates to the technical field of filter packaging, in particular to a chip-scale wave filter packaging structure and a packaging method thereof.
Background
The filter mainly comprises a surface acoustic wave filter and a bulk acoustic wave filter, wherein the surface acoustic wave filter is a passive device which utilizes unprocessed and transmitted signals of surface acoustic waves, has the advantages of light weight, small volume, high reliability and the like, and is widely applied to the fields of radio communication systems, global satellite positioning systems and the like.
The patent application number is 202110818713.9, the invention name is a chip-level airtight packaging process of a SAW filter, and discloses a packaging structure and a packaging process of a filter, wherein the packaging structure comprises a wafer a, a SAW filter b, a metal electrode c of the SAW filter, a metal bump d, a metal electrode e of a packaging substrate, a cavity f formed between the packaging substrate and the SAW filter, a packaging substrate j, a polymer film h and a metal protective layer i. The filter package structure of this structure still has the following disadvantages: 1. the air tightness of the packaging structure is not good enough, mainly the connection at the contact part between the metal protective layer i and the packaging substrate j is not firm enough, so that the waterproof performance of the contact part is reduced after the contact part is used for a long time, and the inner polymer film is not an air-tight material and can not prevent the intrusion of water vapor for a long time; 2. in the packaging structure, the SAW filter b is wrapped by the polymer film h, and the polymer film h is not a good heat conduction material and cannot well conduct the temperature of the chip out, so that the temperature of the chip is too high, and the power tolerance is reduced; 3. the signal of the existing filter is easily interfered, and the anti-interference performance is poor.
Disclosure of Invention
The first technical problem to be solved by the invention is as follows: the chip-scale wave filter packaging structure has the advantages of better air tightness, better heat dissipation effect and better anti-interference performance.
The second technical problem to be solved by the invention is: a packaging method of a chip-level wave filter packaging structure is provided, and the packaging structure manufactured by the packaging method has better air tightness, better heat dissipation effect and better anti-interference performance.
In order to solve the first technical problem, the technical scheme of the invention is as follows: the utility model provides a chip level wave filter packaging structure, includes packaging substrate and filter chip, the upper surface of packaging substrate is arranged in to the filter chip upside down, device output electrode, device input electrode and the device telluric electricity field of filter chip all are provided with the metal bump, the packaging substrate is embedded to have the base plate output electrode, base plate input electrode and the base plate telluric electricity field of being connected with the metal bump one-to-one conductive connection on device output electrode, device input electrode and the device telluric electricity field, packaging substrate's surface still is provided with electrically conductive support and encloses the frame, electrically conductive support enclose the frame be in packaging substrate with between the substrate of filter chip, electrically conductive support encloses the frame and encloses the metal bump vacuole formation, packaging substrate inside still is provided with the metal post, electrically conductive support encloses the frame and pass through the metal post with base plate telluric electricity field is connected, packaging structure still includes at least one deck metal overburden, the metal overburden cladding is in filter chip, electrically conductive support encloses the surface of frame and packaging substrate.
Preferably, the sum of the thicknesses of the device grounding electrode, the metal bump and the substrate grounding electrode exposed in the cavity is greater than or equal to the thickness of the conductive supporting surrounding frame.
Preferably, when the metal covering layer is at least two layers, the metal covering layer is made of different materials.
As a preferable scheme, the conductive supporting surrounding frame is a metal surrounding frame or a conductive adhesive surrounding frame made of conductive adhesive.
Preferably, the metal covering layer is covered with a polymer protective layer on the outside.
After the technical scheme is adopted, the invention has the effects that: because the surface of packaging substrate still is provided with electrically conductive support and encloses the frame, electrically conductive support enclose the frame be in packaging substrate with between the substrate of wave filter chip, electrically conductive support encloses the frame and surrounds metal bump vacuole formation, packaging substrate inside still is provided with the metal post, electrically conductive support encloses the frame and passes through the metal post with base plate telluric electricity is connected, packaging structure still includes at least one deck metal covering, the metal covering cladding is in wave filter chip, electrically conductive support and encloses the surface of frame and packaging substrate, consequently, this packaging structure compares the structure in the background art and has following advantage: 1. the packaging structure adopts the conductive supporting enclosure frame to surround the metal salient points, the metal covering layer can be more reliably attached and molded, and the connecting area between the metal covering layer and the packaging substrate can be sealed by the conductive supporting enclosure frame, so that the packaging structure has better sealing property and is suitable for being used in a high-humidity environment; 2. the metal covering layer and the conductive supporting surrounding frame of the packaging structure can better guide heat of the filter chip out, wherein the heat generated by the filter chip is conducted to the conductive supporting surrounding frame through the metal covering layer and then is conducted out from the grounding electrode of the substrate through the metal column, so that the self-heating of the chip is reduced, and the power tolerance is improved; 3. this electrically conductive support encloses the frame and passes through metal column and substrate telluric electricity field with metal covering to be connected, realizes ground connection, and whole filter chip all is in inside a grounded metal covering like this to the anti-interference performance has been improved.
Because the sum of the thicknesses of the grounding electrode of the device, the metal salient point and the grounding electrode of the substrate exposed in the cavity is greater than or equal to the thickness of the conductive supporting surrounding frame, the conductive supporting surrounding frame can form a cavity after the metal salient point and the grounding electrode of the substrate are welded, so that the metal covering layer is more conveniently formed, the forming difficulty of the process is reduced, and the reliability and stability of the conduction and the heat dissipation are ensured.
When the metal covering layer is at least two layers, the metal covering layers are made of different materials, so that the air tightness of the metal covering layer can be further improved, the performance can be optimized by combining different material characteristics, and the heat conducting performance and the mechanical performance are considered.
Because the polymer protective layer is covered outside the metal covering layer, and the polymer protective layer is made of polymer, the packaging structure has certain elasticity and plays a certain role in protecting the whole packaging structure.
In addition, to solve the second technical problem, the present invention adopts the following technical solutions: a packaging method of a chip-scale wave filter packaging structure comprises the following steps:
s1, providing a packaging substrate and a filter chip, wherein metal bumps are arranged on a device output electrode, a device input electrode and a device grounding electrode of the filter chip;
s2, embedding a substrate output electrode, a substrate input electrode, a substrate grounding electrode and a metal column in the packaging substrate, arranging a circle of conductive supporting enclosure frame on the surface of the packaging substrate, wherein the substrate output electrode, the substrate input electrode and the substrate grounding electrode are positioned in the conductive supporting enclosure frame, and the metal column is in conductive connection with the conductive supporting enclosure frame;
s3, inversely installing the filter chip to enable the substrate output electrode, the substrate input electrode and the substrate grounding electrode to be respectively and correspondingly supported with the metal bumps on the device output electrode, the device input electrode and the device grounding electrode one by one;
s4, welding each metal convex point with a substrate output electrode, a substrate input electrode and a substrate grounding electrode to enable the substrate, the packaging substrate and the conductive support enclosing frame to enclose a cavity together;
s5, coating a metal covering layer outside the packaging substrate, the substrate and the conductive supporting surrounding frame;
and S6, cutting and scribing to form a filter packaging structure.
After the technical scheme is adopted, the invention has the effects that: the packaging method can form the filter packaging structure, the conductive column and the conductive support enclosure frame are used for realizing grounding of the metal covering layer, the anti-interference performance is improved, better heat dissipation is realized by the conductive support enclosure frame, the conductive column and the metal covering layer, self-heating of a chip is reduced, power tolerance is improved, the conductive support enclosure frame can better ensure the forming of the metal covering layer, and the air tightness of the connecting part of the metal covering layer and the substrate is better.
Preferably, the device formed in step S5 is subjected to film pasting on the surface of the metal covering layer by using a polymer film, the polymer covering layer is formed by curing after the film pasting, then the polymer covering layer is cut, and then the cutting scribing in step S6 is performed or the step S6 is directly performed to integrally cut the polymer covering layer, the metal covering layer and the packaging substrate.
Preferably, the conductive support enclosure frame is a metal enclosure frame, and the metal enclosure frame is formed by sputtering or evaporating a layer of metal enclosure frame on the packaging substrate through a semiconductor process; or a metal enclosure frame is formed in the forming process of the substrate output electrode, the substrate input electrode, the substrate grounding electrode and the metal column, then the metal enclosure frame is thickened through a printing process or an evaporation or electroplating process, and the metal enclosure frame is thinned through a grinding or etching process.
Preferably, the conductive support enclosure frame is a conductive adhesive enclosure frame, and the conductive adhesive enclosure frame is formed on the packaging substrate through silk-screen printing by a printing process.
Drawings
The invention is further illustrated with reference to the following figures and examples.
Fig. 1 is a cross-sectional view of a package substrate according to an embodiment of the invention;
fig. 2 is a schematic structural diagram of a package substrate and a conductive support enclosure according to an embodiment of the invention;
fig. 3 is a schematic structural view of a filter chip inverted on the upper surface of a package substrate;
FIG. 4 is a schematic view of the structure covered with a metal cap layer;
FIG. 5 is a schematic view of the structure after being covered with a polymeric protective layer;
FIG. 6 is a schematic view of the structure after cutting the polymeric protective layer;
FIG. 7 is a schematic view of the entire package structure;
in the drawings: 1. a package substrate; 2. a metal post; 3. a substrate ground electrode; 4. a substrate output electrode; 5. a conductive support enclosure frame; 6. a filter chip; 61. an interdigital transducer; 62. a device ground electrode; 63. a metal bump; 64. a device output electrode; 65. a substrate; 7. a metal cap layer; 8. a polymeric protective layer.
Detailed Description
The present invention is described in further detail below by way of specific examples.
As shown in fig. 4 and 7, a chip-scale filter package structure includes a package substrate 1 and a filter chip 6, wherein the package substrate 1 is a high temperature sintered ceramic substrate (HTCC) whose main component is alumina, but may be other materials, such as a printed circuit board or an LTCC substrate.
The packaging structure can be suitable for packaging a surface acoustic wave filter chip and can also be suitable for packaging a bulk acoustic wave filter chip, wherein the surface acoustic wave filter chip 6 mainly comprises a substrate 65, and an interdigital transducer 61 and a reflecting grating which are arranged on the surface of the substrate 65, wherein the substrate 65 is made of a piezoelectric material, and is mainly a single-layer or multi-layer material made of lithium tantalate or lithium niobate piezoelectric crystals; the interdigital transducer 61 and the reflection grating are formed by a semiconductor process, for example, by spin coating, photolithography, development, evaporation, and etching on the surface of the substrate 65. The bulk acoustic wave filter chip also includes the substrate 65 and the chip body, and the chip body is also provided with the device output electrode 64, the device input electrode, and the device ground electrode 62, so the packaging method of the present embodiment is also suitable for packaging the bulk acoustic wave filter chip.
The filter chip 6 is inversely arranged on the upper surface of the package substrate 1, the device output electrode 64, the device input electrode and the device grounding electrode 62 of the filter chip 6 are all provided with metal bumps 63, the metal bumps 63 can be formed by gold wire ball bonding technology, and certainly, the metal bumps 63 can also be made of tin, aluminum, copper or other metal alloy materials and are connected with the device output electrode 64, the device input electrode and the device grounding electrode 62 in the modes of reflow soldering, ultrasonic soldering and the like.
The package substrate 1 is embedded with a substrate output electrode 4, a substrate input electrode and a substrate grounding electrode 3 which are in one-to-one corresponding conductive connection with the metal bumps 63 on the device output electrode 64, the device input electrode and the device grounding electrode 62, wherein the upper end and the lower end of the substrate output electrode 4, the substrate input electrode and the substrate grounding electrode 3 are exposed out of the package substrate 1, so that welding is convenient, and in the embodiment, the number of the device output electrode 64, the device input electrode and the device grounding electrode 62 of the filter chip 6 is at least one, preferably a plurality, so that the number of the substrate output electrode 4, the substrate input electrode and the substrate grounding electrode 3 is also a plurality.
The surface of the packaging substrate 1 is further provided with a conductive supporting enclosing frame 5, the conductive supporting enclosing frame 5 is located between the substrate 65 of the filter chip 6 and the packaging substrate 1, the conductive supporting enclosing frame 5 encloses the metal bumps 63 to form a cavity, the packaging substrate 1 is further internally provided with metal columns 2, and the metal columns 2 are formed in the same manner as the substrate output electrodes 4, the substrate input electrodes and the substrate grounding electrodes 3.
The conductive support enclosure frame 5 is connected with the substrate grounding electrode 3 through the metal column 2, the packaging structure further comprises at least one metal covering layer 7, and the metal covering layer 7 covers the surfaces of the filter chip 6, the conductive support enclosure frame 5 and the packaging substrate 1.
Wherein, the sum of the thicknesses of the device grounding electrode 62, the metal bump 63 and the substrate grounding electrode 3 exposed in the cavity is greater than or equal to the thickness of the conductive supporting surrounding frame 5. The height of the conductive supporting enclosure frame 5 is 5-50 um. Preferably, the thickness of the conductive support enclosure 5 is sufficient to support the substrate 65, which makes the stress on the filter chip 6 more reasonable. And when the sum of the thicknesses of the device grounding electrode 62, the metal bump 63 and the substrate grounding electrode 3 exposed outside the package substrate 1 is larger than the thickness of the conductive support enclosure frame 5, the gap between the conductive support enclosure frame 5 and the substrate 65 can be controlled to be smaller than 1um. Therefore, the forming of the metal covering layer 7 can be ensured, and the heat conduction route is that the heat of the chip is conducted to the external substrate grounding electrode 3 through the conductive supporting surrounding frame and the metal column 2 after passing through the metal covering layer 7.
When the sum of the thicknesses of the metal bump 63 and the substrate grounding electrode 3 exposed in the cavity is equal to the thickness of the conductive support surrounding frame 5, the contact width of the conductive support surrounding frame 5 and the substrate 65 in each direction accounts for more than 1/3 of the total width of the conductive support surrounding frame 5 in each direction, so that the conductive support surrounding frame and the substrate 6 have enough contact area, heat conduction is further facilitated, and the heat can be transferred to the external substrate grounding electrode 3 through the conductive support surrounding frame 5. It is further preferable that the conductive support frame 5 is a rectangular frame, and the widths of the conductive support frame 5 in the four directions are equal, and the contact widths of the conductive support frame 5 and the substrate 65 in the directions are equal.
In this embodiment, the thickness of the metal covering layer 7 is 3-10um. When the metal covering layer 7 is at least two layers, the metal covering layer 7 is made of different materials, and the material may be one or more of gold, silver, copper, nickel, aluminum and other metals or an alloy.
In this embodiment, the conductive supporting enclosure frame 5 is preferably a metal enclosure frame, the material of the metal enclosure frame may be copper, tin, gold, nickel or a composite metal, and the metal enclosure frame may be formed by a semiconductor process. Or a metal enclosure frame is formed in the process of molding the substrate output electrode 4, the substrate input electrode, the substrate grounding electrode 3 and the metal column 2 on the package substrate 1, and then the metal enclosure frame with the designated thickness is formed by thickening in the modes of printing, evaporation and electroplating or is formed by thinning in the modes of etching and grinding.
Of course, the conductive supporting frame 5 may also be a conductive adhesive frame made of conductive adhesive. The conductive adhesive can be gold conductive adhesive, silver conductive adhesive, copper conductive adhesive and carbon conductive adhesive, and the conductive adhesive with better heat conductivity is preferably used.
The metal covering layer 7 is covered with a polymer protective layer 8, and the polymer protective layer 8 is preferably formed by covering with an epoxy resin.
In addition, the embodiment of the invention also discloses a packaging method of the chip-scale wave filter packaging structure, which comprises the following steps:
s1, providing a packaging substrate 1 and a filter chip 6, wherein a device output electrode 64, a device input electrode and a device grounding electrode 62 of the filter chip 6 are provided with metal bumps 63; the metal bumps 63 are formed by gold wire ball bonding, or the metal bumps 63 may be solder balls formed by printing solder paste and then reflowing.
S2, embedding the substrate output electrode 4, the substrate input electrode, the substrate ground electrode 3 and the metal posts 2 in the package substrate 1, as shown in fig. 1, the package substrate 1 preferably adopts an HTCC substrate, although printed circuit boards and LTCC substrates are not excluded. The substrate output electrode 4, the substrate input electrode, the substrate grounding electrode 3 and the metal column 2 can be manufactured by processes such as laser drilling, micropore grouting or precise conductor paste printing. A circle of conductive supporting surrounding frame 5 is arranged on the surface of the packaging substrate 1, the substrate output electrode 4, the substrate input electrode and the substrate grounding electrode 3 are positioned in the conductive supporting surrounding frame 5, and the metal column 2 is in conductive connection with the conductive supporting surrounding frame 5, as shown in fig. 2;
when the conductive support enclosure frame 5 is a metal enclosure frame, a layer of metal enclosure frame is sputtered or evaporated on the packaging substrate 1 through a photoetching process; the specific process steps are as follows: s21, firstly, gluing the packaging substrate 1 to form a photoresist layer; s22, exposing and developing the photoresist by using a mask, forming a groove on the packaging substrate 1 at the position of the conductive supporting surrounding frame 5, and exposing the packaging substrate 1 at the groove; s23, forming a conductive supporting surrounding frame 5 in the etching groove by utilizing a sputtering or evaporation process; s24, removing the photoresist to finally form an independent conductive supporting enclosure frame 5;
or a metal enclosure frame is formed in the forming process of the substrate output electrode, the substrate input electrode, the substrate grounding electrode and the metal column, then the metal enclosure frame is thickened through a printing process or an evaporation or electroplating process, or the metal enclosure frame is thinned through a grinding or etching process.
And when the conductive support enclosure frame 5 is a conductive adhesive enclosure frame, the conductive adhesive enclosure frame is formed on the package substrate 1 by silk-screen printing through a printing process.
S3, as shown in FIG. 3, the filter chip 6 is placed in a flip-chip manner, and the substrate output electrode 4, the substrate input electrode and the substrate grounding electrode 3 are respectively supported in a one-to-one correspondence manner with the metal bumps 63 on the device output electrode 64, the device input electrode and the device grounding electrode 62; wherein the conductive support enclosure 5 is located between the substrate 65 and the package substrate 1, and the conductive support enclosure 5 can also support the substrate 65 of the filter chip 6 with a suitable thickness.
S4, continuing to weld each metal bump 63 with the substrate output electrode 4, the substrate input electrode and the substrate grounding electrode 3 as shown in FIG. 3, so that the substrate 65, the packaging substrate 1 and the conductive support enclosure frame 5 jointly enclose a cavity; in this embodiment, the welding manner is ultrasonic welding or reflow welding, the gap between the substrate 65 and the conductive supporting enclosure frame 5 is made smaller than 1um as much as possible during welding, and when the filter chip 6 is placed in an inverted manner, it is ensured that the contact width of the conductive supporting enclosure frame 5 and the substrate 65 in each direction accounts for more than 1/3 of the total width of the conductive supporting enclosure frame 5 in each direction.
S5, as shown in FIG. 4, a metal covering layer 7 is coated outside the packaging substrate 1, the substrate 65 and the conductive supporting surrounding frame 5; the metal coating layer 7 may be formed by vapor deposition or sputtering.
And S6, cutting and scribing to form a filter packaging structure. The cutting can be realized by adopting a mechanical cutting mode.
In the embodiment, preferably, the device formed in step S5 is subjected to film pasting on the surface of the metal covering layer 7 by using a polymer film, the polymer film is solidified after the film pasting to form the polymer protection layer 8, then the polymer protection layer 8 is cut, and then the cutting dicing in step S6 is performed. The polymer protective layer 8 is preferably cut by laser, the polymer protective layer 8 can be cut more quickly by laser cutting, the polymer protective layer 8 is prevented from being peeled off from the metal covering layer 7 in the cutting process, the polymer protective layer 8 can be integrally formed and then the cutting scribing of the step S6 can be carried out, and at the moment, the polymer protective layer 8, the metal covering layer 7 and the packaging substrate 1 are integrally cut by mechanical cutting.
The above-mentioned embodiments are merely descriptions of the preferred embodiments of the present invention, and are not intended to limit the scope of the present invention, and various modifications and alterations made to the technical solution of the present invention without departing from the spirit of the present invention are intended to fall within the scope of the present invention defined by the claims.
Claims (9)
1. The utility model provides a chip level wave filter packaging structure, includes packaging substrate and filter chip, the upper surface of packaging substrate is arranged in to the filter chip upside down, device output electrode, device input electrode and the device telluric electricity field of filter chip all are provided with the metal bump, the packaging substrate is embedded to have the base plate output electrode, base plate input electrode and the base plate telluric electricity field of being connected with the metal bump one-to-one conductive connection on device output electrode, device input electrode and the device telluric electricity field, its characterized in that: the surface of the packaging substrate is further provided with a conductive supporting surrounding frame, the conductive supporting surrounding frame is located between the packaging substrate and the substrate of the filter chip, the conductive supporting surrounding frame surrounds the metal salient points to form a cavity, the packaging substrate is further internally provided with metal columns, the conductive supporting surrounding frame passes through the metal columns and the substrate grounding electrode, the packaging structure further comprises at least one layer of metal covering layer, and the metal covering layer covers the surfaces of the filter chip, the conductive supporting surrounding frame and the packaging substrate.
2. The chip-scale wave filter package structure of claim 1, wherein: the sum of the thicknesses of the device grounding electrode, the metal bumps and the substrate grounding electrode exposed in the cavity is greater than or equal to the thickness of the conductive supporting surrounding frame.
3. The chip-scale wave filter package structure of claim 2, wherein: when the metal covering layer is at least two layers, the metal covering layer is made of different materials.
4. A chip-scale wave filter package according to any of claims 1 to 3, wherein: the conductive support enclosure frame is a metal enclosure frame or a conductive adhesive enclosure frame made of conductive adhesive.
5. The chip-scale wave filter package structure of claim 4, wherein: and a polymer protective layer covers the outside of the metal covering layer.
6. A packaging method of a chip-scale wave filter packaging structure is characterized in that: the method comprises the following steps:
s1, providing a packaging substrate and a filter chip, wherein metal bumps are arranged on a device output electrode, a device input electrode and a device grounding electrode of the filter chip;
s2, embedding a substrate output electrode, a substrate input electrode, a substrate grounding electrode and a metal column in the packaging substrate, arranging a circle of conductive supporting enclosure frame on the surface of the packaging substrate, wherein the substrate output electrode, the substrate input electrode and the substrate grounding electrode are positioned in the conductive supporting enclosure frame, and the metal column is in conductive connection with the conductive supporting enclosure frame;
s3, inversely installing the filter chip to enable the substrate output electrode, the substrate input electrode and the substrate grounding electrode to be respectively and correspondingly supported with the metal bumps on the device output electrode, the device input electrode and the device grounding electrode one by one;
s4, welding each metal convex point with a substrate output electrode, a substrate input electrode and a substrate grounding electrode to enable the substrate, the packaging substrate and the conductive support enclosing frame to jointly enclose a cavity;
s5, coating a metal covering layer outside the packaging substrate, the substrate and the conductive supporting surrounding frame;
and S6, cutting and scribing to form a filter packaging structure.
7. The method of claim 6, wherein the step of encapsulating the chip-scale filter comprises: and (4) sticking a film on the surface of the metal covering layer by adopting a polymer film of the device formed in the step (S5), curing the film to form a polymer protective layer, cutting the polymer protective layer, and then cutting and scribing in the step (S6) or directly cutting the polymer protective layer, the metal covering layer and the packaging substrate integrally in the step (S6).
8. The method of claim 7, wherein the step of encapsulating the chip-scale filter comprises: the conductive supporting enclosure frame is a metal enclosure frame, and a layer of metal enclosure frame is sputtered or evaporated on the packaging substrate through a semiconductor process;
or a metal enclosure frame is formed in the forming process of the substrate output electrode, the substrate input electrode, the substrate grounding electrode and the metal column, and then the metal enclosure frame is thickened through a printing process or an evaporation or electroplating process, or thinned through a grinding or etching process.
9. The method of claim 7, further comprising: the conductive support enclosing frame is a conductive adhesive enclosing frame, and the conductive adhesive enclosing frame is formed on the packaging substrate through silk-screen printing by a printing process.
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| Application Number | Priority Date | Filing Date | Title |
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| CN202211522417 | 2022-11-30 | ||
| CN2022115224175 | 2022-11-30 |
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| CN115865023A true CN115865023A (en) | 2023-03-28 |
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| CN202211657225.5A Pending CN115865023A (en) | 2022-11-30 | 2022-12-22 | Chip-scale wave filter packaging structure and packaging method thereof |
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