CN218998030U - Chip-scale wave filter packaging structure - Google Patents
Chip-scale wave filter packaging structure Download PDFInfo
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- CN218998030U CN218998030U CN202223473336.9U CN202223473336U CN218998030U CN 218998030 U CN218998030 U CN 218998030U CN 202223473336 U CN202223473336 U CN 202223473336U CN 218998030 U CN218998030 U CN 218998030U
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Abstract
The utility model discloses a chip-scale wave filter packaging structure, which belongs to the technical field of filter packaging, and comprises a packaging substrate and a filter chip, wherein the filter chip is inverted on the upper surface of the packaging substrate, a conductive supporting surrounding frame for supporting the substrate is further arranged on the surface of the packaging substrate, the conductive supporting surrounding frame surrounds a metal bump to form a cavity, a metal column is further arranged in the packaging substrate, the conductive supporting surrounding frame is connected with a substrate grounding electrode through the metal column, and the packaging structure further comprises at least one metal covering layer, wherein the metal covering layer is coated on the surfaces of the filter chip, the conductive supporting surrounding frame and the packaging substrate. The packaging structure has better air tightness, better heat dissipation effect and better anti-interference performance.
Description
Technical Field
The utility model relates to the technical field of filter packaging, in particular to a chip-scale filter packaging structure.
Background
The filter mainly comprises a surface acoustic wave filter and a bulk acoustic wave filter, and the surface acoustic wave filter is a passive device which utilizes unprocessed and propagated signals of the surface acoustic wave, has the advantages of light weight, small volume, high reliability and the like, and is widely applied to the fields of radio communication systems, global satellite positioning systems and the like.
The patent application number is 202110818713.9, and the utility model discloses a packaging structure and a packaging process of a chip-scale airtight packaging process of a SAW filter, wherein the packaging structure comprises a wafer a, the SAW filter b, a metal electrode c of the SAW filter, a metal bump d, a metal electrode e of a packaging substrate, a cavity f formed between the packaging substrate and the SAW filter, the packaging substrate j, a polymer film h and a metal protection layer i. The filter package structure of this structure has the following disadvantages: 1. the air tightness of the packaging structure is not good enough, namely the connection between the contact part of the metal protection layer i and the packaging substrate j is not firm enough, the waterproof performance of the contact part of the metal protection layer i and the packaging substrate j is easy to be reduced after the contact part is used for a long time, and the internal polymer film is not an air tightness material and can not prevent the invasion of water vapor for a long time; 2. in the packaging structure, the SAW filter b is wrapped by the polymer film h, and the polymer film h is not a good heat conduction material and cannot well conduct the chip temperature, so that the chip temperature is too high and the power tolerance is reduced; 3. the signal of the current filter is easy to be interfered, and the interference resistance is poor.
Disclosure of Invention
The technical problems to be solved by the utility model are as follows: the chip-scale wave filter packaging structure has better air tightness, better heat dissipation effect and better anti-interference performance.
In order to solve the technical problems, the technical scheme of the utility model is as follows: the utility model provides a chip level wave filter packaging structure, includes package substrate and filter chip, filter chip inverts in package substrate's upper surface, filter chip's device output electrode, device input electrode and device ground electrode all are provided with the metal bump, package substrate is embedded to have with device output electrode, device input electrode and the metal bump one-to-one conductive connection's on the device ground electrode base plate output electrode, base plate input electrode and base plate ground electrode, package substrate's surface still is provided with electrically conductive support and encloses the frame, electrically conductive support encloses the frame and is in package substrate with filter chip's substrate is between, electrically conductive support encloses the frame and surrounds the metal bump forms the cavity, package substrate inside still is provided with the metal post, electrically conductive support encloses the frame through the metal post with the base plate ground electrode is connected, package structure still includes at least one deck metal covering, the metal covering layer cladding is in filter chip, electrically conductive support encloses the surface of frame and package substrate.
As a preferable scheme, the sum of the thicknesses of the device grounding electrode, the metal convex points and the substrate grounding electrode exposed in the cavity is larger than or equal to the thickness of the conductive supporting surrounding frame.
As a preferred embodiment, the metal cover layer is at least two layers, and the materials of the metal cover layers are different.
As a preferable scheme, the conductive supporting surrounding frame is a metal surrounding frame or a conductive adhesive surrounding frame made of conductive adhesive.
As a preferred solution, the metal cover layer is covered on the outside with a polymer protective layer.
After the technical scheme is adopted, the utility model has the following effects: because the surface of encapsulation base plate still is provided with electrically conductive support and encloses the frame, electrically conductive support encloses the frame and is in encapsulation base plate with the substrate of filter chip, electrically conductive support encloses the frame is encircled the metal bump forms the cavity, the inside metal column that still is provided with of encapsulation base plate, electrically conductive support encloses the frame through the metal column with the base plate ground electrode is connected, packaging structure still includes at least one deck metal coating, the metal coating cladding is in the surface of filter chip, electrically conductive support encloses frame and encapsulation base plate, consequently, this packaging structure has following advantage than the structure in the background art: 1. the packaging structure adopts the conductive supporting surrounding frame to surround the metal convex points, the metal covering layer can be more reliably attached and formed, and the connecting area between the metal covering layer and the packaging substrate can be sealed by the conductive supporting surrounding frame, so that the packaging structure has better sealing performance and is suitable for being used in a high-humidity environment; 2. the metal covering layer and the conductive supporting surrounding frame of the packaging structure can better lead out the heat of the filter chip, wherein the generated heat of the filter chip is conducted to the conductive supporting surrounding frame through the metal covering layer and then is conducted out from the substrate grounding electrode through the metal column, so that the self-heating of the chip is reduced, and the power tolerance is improved; 3. the metal covering layer is connected with the substrate grounding electrode through the metal column by the conductive supporting surrounding frame to realize grounding, so that the whole filter chip is positioned inside the grounded metal covering layer, and the anti-interference performance is improved.
Because the sum of the thicknesses of the device grounding electrode, the metal convex points and the substrate grounding electrode exposed in the cavity is larger than or equal to the thickness of the conductive supporting surrounding frame, after the metal convex points and the substrate grounding electrode are welded, the conductive supporting surrounding frame can form a cavity, so that the metal covering layer can be better formed conveniently, the process forming difficulty is reduced, and the reliable and stable conduction and heat dissipation are ensured.
When the metal covering layer is at least two layers, the materials of the metal covering layers are different, so that the air tightness of the metal covering layer can be further improved, the performance can be optimized by combining the characteristics of different materials, and the heat conducting performance and the mechanical performance are both considered.
The polymer protection layer is covered outside the metal covering layer, and the material of the polymer protection layer is polymer, so that the metal covering layer has certain elasticity and plays a certain role in protecting the whole packaging structure.
In addition, the utility model also discloses a packaging method of the chip-scale wave filter packaging structure, which comprises the following steps:
s1, providing a packaging substrate and a filter chip, wherein a device output electrode, a device input electrode and a device grounding electrode of the filter chip are all provided with metal bumps;
s2, embedding a substrate output electrode, a substrate input electrode, a substrate grounding electrode and a metal column into the packaging substrate, arranging a circle of conductive supporting surrounding frame on the surface of the packaging substrate, wherein the substrate output electrode, the substrate input electrode and the substrate grounding electrode are positioned in the conductive supporting surrounding frame, and the metal column is in conductive connection with the conductive supporting surrounding frame;
s3, the filter chip is inverted to enable the substrate output electrode, the substrate input electrode and the substrate grounding electrode to be respectively supported in one-to-one correspondence with the metal bumps on the device output electrode, the device input electrode and the device grounding electrode;
s4, welding each metal bump with the substrate output electrode, the substrate input electrode and the substrate grounding electrode to enable the substrate, the packaging substrate and the conductive supporting enclosing frame to jointly enclose a cavity;
s5, coating a metal covering layer outside the packaging substrate, the substrate and the conductive supporting surrounding frame;
s6, cutting and scribing to form the filter packaging structure.
After the technical scheme is adopted, the utility model has the following effects: the packaging method can form the filter packaging structure, realizes the grounding of the metal covering layer by utilizing the conductive column and the conductive supporting surrounding frame, improves the anti-interference performance, also realizes better heat dissipation by utilizing the conductive supporting surrounding frame, the conductive column and the metal covering layer, reduces the self-heating of the chip, thereby improving the power tolerance, and ensures the forming of the metal covering layer better by utilizing the conductive supporting surrounding frame, and ensures better air tightness of the connecting part of the metal covering layer and the substrate.
Preferably, the device formed in the step S5 is subjected to film pasting by adopting a polymer film on the surface of the metal covering layer, the film is solidified to form a polymer protecting layer after film pasting, then the polymer protecting layer is cut, and then the cutting and scribing in the step S6 are performed or the whole cutting of the polymer protecting layer, the metal covering layer and the packaging substrate is directly performed in the step S6.
Preferably, the conductive supporting enclosure frame is a metal enclosure frame, and the metal enclosure frame is formed by sputtering or evaporating a layer of metal enclosure frame on the packaging substrate through a semiconductor process; or forming a metal surrounding frame in the forming process of the substrate output electrode, the substrate input electrode, the substrate grounding electrode and the metal column, thickening the metal surrounding frame through a printing process or an evaporation plating or electroplating process, and thinning the metal surrounding frame through a grinding or etching process.
Preferably, the conductive supporting enclosure frame is a conductive adhesive enclosure frame, and the conductive adhesive enclosure frame is formed on the packaging substrate through silk screen printing by a printing process.
Drawings
The utility model will be further described with reference to the drawings and examples.
FIG. 1 is a cross-sectional view of a package substrate according to an embodiment of the present utility model;
fig. 2 is a schematic structural view of a package substrate and a conductive supporting enclosure according to an embodiment of the present utility model;
FIG. 3 is a schematic view showing a structure in which a filter chip is inverted on the upper surface of a package substrate;
FIG. 4 is a schematic view of the structure after being covered with a metal cover layer;
FIG. 5 is a schematic view of the structure after covering the polymer protective layer;
FIG. 6 is a schematic view of the structure after cutting the polymer protective layer;
FIG. 7 is a schematic diagram of the entire package structure;
in the accompanying drawings: 1. packaging a substrate; 2. a metal column; 3. a substrate ground electrode; 4. a substrate output electrode; 5. a conductive support enclosure; 6. a filter chip; 61. an interdigital transducer; 62. a device ground electrode; 63. metal protruding points; 64. a device output electrode; 65. a substrate; 7. a metal cover layer; 8. and a polymer protective layer.
Detailed Description
The present utility model will be described in further detail with reference to the following examples.
As shown in fig. 4 and 7, a chip scale filter package structure includes a package substrate 1 and a filter chip 6, wherein the package substrate 1 is a high temperature sintered ceramic substrate (HTCC), and the main component of the package substrate is alumina, and of course, other materials, such as a printed circuit board or an LTCC substrate, may also be used.
The packaging structure can be suitable for packaging the surface acoustic wave filter chip and also suitable for packaging the bulk acoustic wave filter chip, wherein the surface acoustic wave filter chip 6 mainly comprises a substrate 65, an interdigital transducer 61 and a reflecting grating, wherein the interdigital transducer 61 and the reflecting grating are arranged on the surface of the substrate 65, the substrate 65 is made of piezoelectric materials, and the piezoelectric materials are mainly single-layer or multi-layer materials made of lithium tantalate and lithium niobate piezoelectric crystals; the interdigital transducer 61 and the reflective grating are formed by a semiconductor process, for example, by spin coating, photolithography, development, vapor deposition, and etching on the surface of the substrate 65. The bulk acoustic wave filter chip includes a substrate 65 and a chip body, and the chip body is also provided with a device output electrode 64, a device input electrode and a device ground electrode 62, so that the packaging method of the present embodiment is also suitable for packaging the bulk acoustic wave filter chip.
The filter chip 6 is inverted on the upper surface of the package substrate 1, the device output electrode 64, the device input electrode and the device ground electrode 62 of the filter chip 6 are provided with metal bumps 63, the metal bumps 63 may be formed by a gold wire ball bonding process, and of course, the metal bumps 63 may also be made of tin, aluminum, copper or other metal alloy materials, and are connected with the device output electrode 64, the device input electrode and the device ground electrode 62 by reflow soldering, ultrasonic soldering or other manners.
The package substrate 1 is embedded with the substrate output electrode 4, the substrate input electrode and the substrate ground electrode 3 which are electrically connected with the device output electrode 64, the device input electrode and the metal bump 63 on the device ground electrode 62 in a one-to-one correspondence manner, wherein the upper ends and the lower ends of the substrate output electrode 4, the substrate input electrode and the substrate ground electrode 3 are exposed from the package substrate 1, so that the soldering is convenient, but in this embodiment, the number of the device output electrode 64, the device input electrode and the device ground electrode 62 of the filter chip 6 is at least one, preferably a plurality, and therefore, the number of the substrate output electrode 4, the substrate input electrode and the substrate ground electrode 3 is also a plurality.
The surface of the packaging substrate 1 is also provided with a conductive supporting enclosure frame 5, the conductive supporting enclosure frame 5 is positioned between the substrate 65 of the filter chip 6 and the packaging substrate 1, the conductive supporting enclosure frame 5 encloses the metal bumps 63 to form a cavity, the packaging substrate 1 is also internally provided with metal columns 2, and the formation of the metal columns 2 is the same as the manufacturing mode of the substrate output electrode 4, the substrate input electrode and the substrate grounding electrode 3.
The conductive supporting enclosure frame 5 is connected with the substrate grounding electrode 3 through the metal column 2, the packaging structure further comprises at least one metal covering layer 7, and the metal covering layer 7 is coated on the surfaces of the filter chip 6, the conductive supporting enclosure frame 5 and the packaging substrate 1.
Wherein the sum of the thicknesses of the device grounding electrode 62, the metal bump 63 and the substrate grounding electrode 3 exposed in the cavity is larger than or equal to the thickness of the conductive supporting enclosure frame 5. The height of the conductive supporting surrounding frame 5 is 5-50 um. Preferably, the thickness of the conductive supporting enclosure frame 5 is sufficient to support the substrate 65, so that the stress of the filter chip 6 is more reasonable. And when the sum of the thicknesses of the device ground electrode 62, the metal bump 63, and the substrate ground electrode 3 exposed outside the package substrate 1 is greater than the thickness of the conductive support enclosure frame 5, the gap between the conductive support enclosure frame 5 and the substrate 65 may be controlled so that the gap is less than 1um. In this way, the metal cover layer 7 can be formed, and the heat conduction route is that the heat of the chip is conducted to the external substrate grounding electrode 3 through the conductive supporting surrounding frame and the metal column 2 after passing through the metal cover layer 7.
When the sum of the thicknesses of the metal protruding points 63 and the substrate grounding electrode 3 exposed in the cavity is equal to the thickness of the conductive supporting surrounding frame 5, the contact width between the conductive supporting surrounding frame 5 and the substrate 65 in all directions is more than 1/3 of the total width of the conductive supporting surrounding frame 5 in all directions, so that the conductive supporting surrounding frame and the substrate 6 have enough contact area, heat conduction is further facilitated, and the heat can be transmitted to the external substrate grounding electrode 3 through the conductive supporting surrounding frame 5. It is further preferable that the conductive supporting frame 5 is a rectangular frame, and in four directions, the widths of the conductive supporting frame 5 are equal, and at the same time, the contact widths of the conductive supporting frame 5 and the substrate 65 in all directions are equal.
In this embodiment, the thickness of the metal covering layer 7 is 3-10um. When the metal covering layer 7 is at least two layers, the materials of the metal covering layers 7 are different, and the materials can be one or more metals or alloys of gold, silver, copper, nickel, aluminum and the like.
In this embodiment, the conductive supporting frame 5 is preferably a metal frame, and the metal frame may be made of copper, tin, gold, nickel or a composite metal, and the metal frame may be formed by a semiconductor process. The metal enclosure frame can be formed in the process of forming the substrate output electrode 4, the substrate input electrode, the substrate grounding electrode 3 and the metal column 2 of the packaging substrate 1, and then the metal enclosure frame with the specified thickness can be formed by thickening through printing, vapor deposition and electroplating or by thinning through etching and grinding.
Of course, the conductive supporting frame 5 may be a conductive adhesive frame made of conductive adhesive. Wherein the conductive adhesive can be selected from gold conductive adhesive, silver conductive adhesive, copper conductive adhesive and carbon conductive adhesive, and preferably conductive adhesive with better heat conduction performance is adopted.
The metal cover layer 7 is covered on the outside with a polymer protective layer 8, and the polymer protective layer 8 is preferably formed by an epoxy resin coating.
In addition, the embodiment of the utility model also discloses a packaging method of the chip-scale wave filter packaging structure, which comprises the following steps:
s1, providing a package substrate 1 and a filter chip 6, wherein a device output electrode 64, a device input electrode and a device grounding electrode 62 of the filter chip 6 are provided with metal bumps 63; the metal bump 63 is formed by a gold wire ball bonding process, or the metal bump 63 may be a solder ball formed by printing solder paste and then reflow soldering.
S2, a substrate output electrode 4, a substrate input electrode, a substrate grounding electrode 3 and a metal post 2 are embedded in the packaging substrate 1, and as shown in FIG. 1, the packaging substrate 1 is preferably an HTCC substrate, although a printed circuit board and an LTCC substrate are not excluded. And the substrate output electrode 4, the substrate input electrode, the substrate ground electrode 3 and the metal column 2 can be manufactured by processes such as laser drilling, micropore grouting or precise conductor paste printing. A circle of conductive supporting surrounding frame 5 is arranged on the surface of the packaging substrate 1, the substrate output electrode 4, the substrate input electrode and the substrate grounding electrode 3 are positioned in the conductive supporting surrounding frame 5, and the metal column 2 is in conductive connection with the conductive supporting surrounding frame 5, as shown in fig. 2;
the conductive supporting enclosure frame 5 is a metal enclosure frame or a conductive adhesive enclosure frame made of conductive adhesive, and when the conductive supporting enclosure frame 5 is a metal enclosure frame, a layer of metal enclosure frame is sputtered or evaporated on the packaging substrate 1 through a photoetching process; the specific process steps are as follows: s21, firstly, gluing the packaging substrate 1 to form a photoresist layer; s22, exposing and developing the photoresist by using a mask, forming a groove on the packaging substrate 1 at the position of the conductive supporting surrounding frame 5, and exposing the packaging substrate 1 at the groove; s23, forming a conductive supporting surrounding frame 5 in the etching groove by utilizing a sputtering or vapor plating process; s24, removing the photoresist, so that an independent conductive supporting surrounding frame 5 is finally formed;
and forming a metal surrounding frame in the forming process of the substrate output electrode, the substrate input electrode, the substrate grounding electrode and the metal column, thickening the metal surrounding frame through a printing process or an evaporation or electroplating process, and thinning the metal surrounding frame through a grinding or etching process.
When the conductive supporting frame 5 is a conductive adhesive frame, the conductive adhesive frame is formed on the package substrate 1 by screen printing through a printing process.
S3, as shown in FIG. 3, the filter chip 6 is placed in a flip-chip manner, and the substrate output electrode 4, the substrate input electrode and the substrate grounding electrode 3 are respectively supported in one-to-one correspondence with the metal bumps 63 on the device output electrode 64, the device input electrode and the device grounding electrode 62; wherein the conductive support enclosure 5 is located between the substrate 65 and the package substrate 1, the conductive support enclosure 5 may also support the substrate 65 of the filter chip 6, if the thickness is suitable.
S4, continuing to weld each metal bump 63 with the substrate output electrode 4, the substrate input electrode and the substrate grounding electrode 3 as shown in FIG. 3, so that the substrate 65, the packaging substrate 1 and the conductive supporting enclosing frame 5 jointly enclose a cavity; in this embodiment, the welding mode is ultrasonic welding or reflow welding, so that the gap between the substrate 65 and the conductive supporting frame 5 is as small as 1um as possible during welding, and the contact width between the conductive supporting frame 5 and the substrate 65 in each direction is ensured to be more than 1/3 of the total width of the conductive supporting frame 5 in each direction when the filter chip 6 is placed in a flip-chip manner.
S5, as shown in FIG. 4, a metal covering layer 7 is coated outside the packaging substrate 1, the substrate 65 and the conductive supporting surrounding frame 5; the metal coating layer 7 may be formed by vapor deposition or sputtering.
S6, cutting and scribing to form the filter packaging structure. The cutting may be accomplished by mechanical cutting.
In this embodiment, preferably, the device molded in step S5 is formed by laminating a polymer film on the surface of the metal covering layer 7, curing the film to form a polymer protective layer 8, cutting the polymer protective layer 8, and then dicing in step S6. The polymer protection layer 8 is preferably cut by laser, the polymer protection layer 8 can be cut more rapidly by laser cutting, the polymer protection layer 8 and the metal covering layer 7 are prevented from being peeled off in the cutting process, the polymer protection layer 8 can be molded and then the cutting and scribing of the step S6 can be integrally performed, and at the moment, the polymer protection layer 8, the metal covering layer 7 and the packaging substrate 1 are integrally cut by mechanical cutting.
The above examples are merely illustrative of the preferred embodiments of the present utility model, and are not intended to limit the scope of the present utility model, and various modifications and adaptations of the technical solution of the present utility model should and are intended to fall within the scope of the present utility model as defined in the claims.
Claims (5)
1. The utility model provides a chip scale wave filter packaging structure, includes package substrate and filter chip, filter chip inverts in package substrate's upper surface, filter chip's device output electrode, device input electrode and device ground electrode all are provided with the metal bump, package substrate is embedded to have with device output electrode, device input electrode and device ground electrode on the metal bump one-to-one conductive connection's base plate output electrode, base plate input electrode and base plate ground electrode, its characterized in that: the surface of encapsulation base plate still is provided with electrically conductive support and encloses the frame, electrically conductive support encloses the frame and is in encapsulation base plate with between the substrate of filter chip, electrically conductive support encloses the frame is encircled the metal bump forms the cavity, the inside metal column that still is provided with of encapsulation base plate, electrically conductive support encloses the frame through the metal column with the base plate ground electrode is connected, packaging structure still includes at least one deck metal coating, the metal coating cladding is in the surface of filter chip, electrically conductive support encloses frame and encapsulation base plate.
2. The chip scale filter package of claim 1, wherein: the sum of the thicknesses of the device grounding electrode, the metal convex points and the substrate grounding electrode exposed in the cavity is larger than or equal to the thickness of the conductive supporting surrounding frame.
3. The chip scale wave filter package according to claim 2, wherein: when the metal covering layers are at least two layers, the materials of the metal covering layers are different.
4. A chip scale wave filter package according to any of claims 1-3, wherein: the conductive supporting enclosing frame is a metal enclosing frame or a conductive adhesive enclosing frame made of conductive adhesive.
5. The chip scale filter package of claim 4, wherein: the metal cover layer is covered with a polymer protective layer on the outer part.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202223212637 | 2022-11-30 | ||
| CN2022232126376 | 2022-11-30 |
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| CN218998030U true CN218998030U (en) | 2023-05-09 |
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| CN202223473336.9U Active CN218998030U (en) | 2022-11-30 | 2022-12-22 | Chip-scale wave filter packaging structure |
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