CN115864137A - Semiconductor laser - Google Patents

Abstract

The invention discloses a semiconductor laser, which comprises a mosaic plate, and a beam combining module, a coupling module and at least two light emitting modules which are arranged on the mosaic plate; the light-emitting modules are arranged side by side, and the bottom of each light-emitting module penetrates through the mosaic plate and protrudes out of the bottom surface of the mosaic plate; the beam combining module is used for combining the light beams emitted by the light emitting modules; the coupling module is used for coupling the combined light beam into the optical fiber. The semiconductor laser has the advantages of light weight, low manufacturing cost and use cost and the like, and can prevent the problem of optical path deviation of each light-emitting module during assembly.

Description

Semiconductor laser

Technical Field

The invention belongs to the technical field of lasers, and particularly relates to a semiconductor laser.

Background

With the application of lasers in many fields, people have an increasing demand on the output power of the lasers, and most of the existing high-power lasers adopt a mode of sintering a plurality of laser chips on one tube shell to increase the output power, however, the volume and the mass of the tube shell become larger, so that the lasers do not meet the requirement of light weight; moreover, when the laser chip fails, the laser chip cannot be partially replaced, so that the whole laser is scrapped, and the manufacturing cost and the use cost of the laser are increased.

Disclosure of Invention

In view of the above, the present invention discloses a semiconductor laser to overcome or at least partially solve the above problems.

In order to achieve the purpose, the invention adopts the following technical scheme:

the invention provides a semiconductor laser, which comprises a mosaic plate, and a beam combining module, a coupling module and at least two light emitting modules which are arranged on the mosaic plate;

the light-emitting modules are arranged side by side, and the bottoms of the light-emitting modules penetrate through the mosaic plate and protrude from the bottom surface of the mosaic plate;

the beam combining module is used for combining the light beams emitted by the light emitting modules;

and the coupling module is used for coupling the combined light beam into the optical fiber.

Further, the bottom of each light-emitting module is flush.

Further, the light emitting module comprises a tube shell, and a first light emitting unit, a second light emitting unit, a first shaping unit, a second shaping unit, a first reflecting unit and a second reflecting unit which are arranged in the tube shell;

the first light-emitting unit is provided with at least one first laser chip which is arranged side by side along a first direction, and the first laser chip emits light beams along a second direction; the second light-emitting unit is provided with at least one second laser chip which is arranged side by side along a first direction, and the second laser chip emits light beams along a second direction;

the first shaping unit is used for shaping the light beam emitted by the first light emitting unit, the second shaping unit is used for shaping the light beam emitted by the second light emitting unit, the first reflecting unit is used for reflecting the light beam emitted by the first shaping unit along a first direction, and the second reflecting unit is used for reflecting the light beam emitted by the second shaping unit along the first direction.

Further, the first light emitting unit and the second light emitting unit are located at different levels, and the first shaping unit and the second shaping unit are located at different levels.

Further, the first shaping unit includes a first fast-axis collimating lens and a first slow-axis collimating lens, and the light beam emitted by the first laser chip sequentially passes through the first fast-axis collimating lens and the first slow-axis collimating lens along a first direction; the second shaping unit comprises a second fast axis collimating lens and a second slow axis collimating lens, and light beams emitted by the second laser chip sequentially pass through the second fast axis collimating lens and the second slow axis collimating lens along a first direction; the first fast axis collimating lens and the second fast axis collimating lens are located at different levels, and the first slow axis collimating lens and the second slow axis collimating lens are located at different levels;

the first reflecting unit includes at least one first mirror, and the second reflecting unit includes at least one second mirror.

Further, the first light emitting units are disposed on a stepped structure, the first laser chips are disposed on different steps, the second light emitting units are disposed on another stepped structure, and the second laser chips are disposed on different steps.

Furthermore, the light-emitting module also comprises a third reflector, a polarization beam-combining prism and a light-rising mirror;

the third reflector is configured to reflect the light beams emitted by the first reflecting unit or the second reflecting unit in a first direction, the beam expander is configured to change heights of central light spots emitted by the first light emitting unit or the second light emitting unit, so that the heights of the central light spots emitted by the first light emitting unit and the second light emitting unit are the same, and the polarization beam combining prism is configured to polarize and combine the light beams emitted by the first light emitting unit and the second light emitting unit.

Further, the beam combining module comprises at least two beam combining reflecting mirrors;

the beam combining reflection mirror is used for reflecting the light beams emitted by the light emitting modules to the coupling module.

Further, the first reflection unit and the second reflection unit are arranged side by side; the beam combining module comprises a beam combining reflecting mirror and at least one polarizing plate, the beam combining reflecting mirror is used for reflecting the light beam emitted by one light emitting module far away from the coupling module to the polarizing plate, and the polarizing plate is used for polarizing and combining the light beam emitted by each light emitting module.

Further, the coupling module comprises a focusing lens;

or a slow axis focusing mirror and a fast axis focusing mirror.

The invention has the advantages and beneficial effects that:

in the semiconductor laser, the output power of the laser is improved in a modularized mode, the quality of the laser can be reduced, and when a laser chip fails, the corresponding light-emitting module can be directly replaced, so that the manufacturing cost and the use cost of the laser are reduced; in addition, all set up at the mosaic plate through all with each light emitting module, can realize each light emitting module's accurate location, prevent that each light emitting module from appearing the problem emergence of light path deviation when the assembly.

Drawings

Various other advantages and benefits will become apparent to those of ordinary skill in the art upon reading the following detailed description of the preferred embodiments. The drawings are only for purposes of illustrating the preferred embodiments and are not to be construed as limiting the invention. Also, like reference numerals are used to refer to like parts throughout the drawings. In the drawings:

fig. 1 is a perspective view of a semiconductor laser in embodiment 1 of the present invention;

fig. 2 is a perspective view of the semiconductor laser viewed from the bottom view in embodiment 1 of the present invention;

fig. 3 is a plan view of a semiconductor laser in embodiment 1 of the present invention;

fig. 4 is a front view of a semiconductor laser in embodiment 1 of the present invention;

fig. 5 is a perspective view of a semiconductor laser in embodiment 2 of the present invention;

fig. 6 is a top view of a semiconductor laser in embodiment 2 of the present invention;

fig. 7 is a front view of a semiconductor laser in embodiment 2 of the present invention;

fig. 8 is a perspective view of a semiconductor laser in embodiment 3 of the present invention;

fig. 9 is a top view of a semiconductor laser in embodiment 3 of the present invention;

fig. 10 is a front view of a semiconductor laser in embodiment 3 of the present invention;

fig. 11 is a perspective view of a semiconductor laser in embodiment 4 of the present invention;

fig. 12 is a top view of a semiconductor laser in embodiment 4 of the present invention;

fig. 13 is a front view of a semiconductor laser in embodiment 4 of the present invention;

fig. 14 is a perspective view of a semiconductor laser in embodiment 5 of the present invention;

fig. 15 is a top view of a semiconductor laser in embodiment 5 of the present invention;

fig. 16 is a front view of a semiconductor laser in embodiment 5 of the present invention;

fig. 17 is a perspective view of a semiconductor laser in embodiment 6 of the present invention;

fig. 18 is a top view of a semiconductor laser in embodiment 6 of the present invention;

fig. 19 is a front view of a semiconductor laser in embodiment 6 of the present invention.

In the figure: 1. inlaying a plate; 2. an optical fiber; 3. a pipe shell; 4. a first laser chip; 5. a second laser chip; 6. a first fast axis collimating lens; 7. a first slow axis collimating lens; 8. a first reflector; 9. a second fast axis collimating lens; 10. a second slow axis collimating lens; 11. a second reflector; 12. a third reflector; 13. a polarization beam-combining prism; 14. a light rising mirror; 15. a beam combining mirror; 16. a polarizing plate; 17. a focusing lens; 18. a fixed part; 19. a screw hole; 20. and (4) a window.

Detailed Description

In order to make the objects, technical solutions and advantages of the present invention more apparent, the technical solutions of the present invention will be clearly and completely described below with reference to the specific embodiments of the present invention and the accompanying drawings. It is to be understood that the described embodiments are merely exemplary of the invention, and not restrictive of the full scope of the invention. All other embodiments, which can be obtained by a person skilled in the art without making any creative effort based on the embodiments in the present invention, belong to the protection scope of the present invention.

The technical solutions provided by the embodiments of the present invention are described in detail below with reference to the accompanying drawings.

Example 1

The present embodiment discloses a semiconductor laser, as shown in fig. 1 to 4, the semiconductor laser includes a damascene plate 1, and a beam combining module, a coupling module and at least two light emitting modules, which are disposed on the damascene plate 1; in this embodiment, the number of the light emitting modules is two, and the two light emitting modules have the same structure; of course, in other embodiments, the number of the light emitting modules may also be multiple, the specific number of the light emitting modules may be adjusted according to the output power requirement of the laser, and the structure of each light emitting module may also be different. The panel 1 may be made of metal, such as copper or aluminum, or may be made of non-metal, such as PEEK (polyetheretherketone), PMMA (Polymethyl methacrylate), POM (polyoxymethylene), or the like.

Specifically, the light emitting modules are arranged side by side, and the bottom of each light emitting module penetrates through the panel 1 and protrudes from the bottom surface of the panel 1; it should be noted that, the semiconductor laser of this embodiment cools and dissipates heat of the laser through the water-cooling plate, that is, each light-emitting module needs to be fixed on the water-cooling plate and contacts with the water-cooling plate, and the bottom of each light-emitting module protrudes from the bottom surface of the panel 1, so that the bottom of each light-emitting module can contact with the water-cooling plate, thereby cooling the light-emitting module.

The beam combining module is used for combining the light beams emitted by the light emitting modules, and the coupling module is used for coupling the combined light beams into the optical fiber 2.

In the semiconductor laser of the embodiment, the output power of the laser is improved by arranging at least two light-emitting modules, and all laser chips do not need to be arranged on the same tube shell, so that the quality of the tube shell of the laser can be reduced, and the quality of the laser is further reduced; moreover, when the laser chip fails, the corresponding light-emitting module can be directly replaced, so that the manufacturing cost and the use cost of the laser can be reduced; in addition, the bottoms of the light-emitting modules penetrate through the embedded plate and protrude out of the bottom surface of the embedded plate, when the light-emitting modules are fixed on the water cooling plate, the light beams emitted by the light-emitting modules are consistent by realizing accurate positioning of the light-emitting modules in the horizontal direction through the embedded plate, and further the problem of light path deviation of the light-emitting modules during assembly is prevented.

In this embodiment, the bottom of each light emitting module is flush, that is, the bottom of each light emitting module is on the same horizontal plane, which facilitates the fixing of each light emitting module on the water cooling plate and makes the heat dissipation capability of each light emitting module consistent.

Further, the light emitting module comprises a tube shell 3, and a first light emitting unit, a second light emitting unit, a first shaping unit, a second shaping unit, a first reflecting unit and a second reflecting unit which are arranged in the tube shell 3, namely, the bottom of the tube shell 3 penetrates through the mosaic plate 1, protrudes from the bottom surface of the mosaic plate 1 and is in contact with the water cooling plate; wherein, the tube 3 mainly plays a supporting role for bear optical device and bearing structure, and tube 3 can adopt integrative structure or components of a whole that can function independently structure, and the material of tube 3 can be a metal material, also can be multiple metal material, and when tube 3 was multiple metal material, tube 3 was folded by the sheetmetal or the metal piece of different materials and is pressed and form. Further, a window 20 is formed in the case 3 so that the light beams emitted from the first and second light emitting units can be emitted from the inside of the case 3 through the window 20.

Specifically, the first light-emitting unit has at least one first laser chip 4 arranged side by side along a first direction, and the first laser chip 4 emits a light beam along a second direction; the second light-emitting unit is provided with at least one second laser chip 5 which is arranged side by side along the first direction, and the second laser chip 5 emits light beams along the second direction; the number of the first laser chips 4 and the second laser chips 5 can be set according to actual needs, and the first direction is a Y-axis direction and the second direction is an X-axis direction.

The first shaping unit is used for shaping the light beam emitted by the first light emitting unit, the second shaping unit is used for shaping the light beam emitted by the second light emitting unit, the first reflecting unit is used for reflecting the light beam emitted by the first shaping unit along the first direction, and the second reflecting unit is used for reflecting the light beam emitted by the second shaping unit along the first direction.

And the first light-emitting unit and the second light-emitting unit are positioned at different levels, and the first shaping unit and the second shaping unit are positioned at different levels, namely the level of the first light-emitting unit is consistent with that of the first shaping unit, and the level of the second light-emitting unit is consistent with that of the second shaping unit. In the present embodiment, the level of the first light emitting unit is higher than the level of the second light emitting unit, and in other embodiments, the level of the first light emitting unit may be lower than the level of the second light emitting unit.

Like this, through being located not co-altitude setting with first luminescence unit and second luminescence unit, the dislocation was arranged from top to bottom to the light beam that makes first luminescence unit and second luminescence unit launch, form the intensive light path in three-dimensional space, compare current laser instrument, distance between the adjacent laser instrument chip can be reduced in same luminescence unit, distance between two luminescence units also can be reduced, under the prerequisite that laser chip quantity is unanimous, whole laser instrument's volume has been reduced, the utilization efficiency of inner space has been improved, the weight of laser instrument has been reduced.

In addition, the periphery of the tube shell 3 is extended with a fixing part 18, and the fixing part 18 is provided with a screw hole 19, so that a screw or a bolt can be screwed downwards through the screw hole 19, pass through the mosaic plate 1 and be fixedly connected with the water cooling plate, and further the fixed connection among the tube shell 3, the mosaic plate 1 and the water cooling plate is realized. When the whole laser is installed, a part of pretightening force of an installation screw or a bolt can be removed through the mosaic plate 1, so that the installation stress borne by the light-emitting module is reduced, the deformation of key areas such as a beam combination module, a coupling module and an optical fiber is reduced, the optically variable risk is reduced, and the stability of the whole structure of the semiconductor laser is kept.

In this embodiment, the first shaping unit includes a first fast axis collimating lens 6 and a first slow axis collimating lens 7, and the light beam emitted from the first laser chip 4 sequentially passes through the first fast axis collimating lens 6 and the first slow axis collimating lens 7 along a first direction; the second shaping unit comprises a second fast axis collimating lens 9 and a second slow axis collimating lens 10, and the light beam emitted by the second laser chip 5 sequentially passes through the second fast axis collimating lens 9 and the second slow axis collimating lens 10 along the first direction; the first fast axis collimating lens 6 and the second fast axis collimating lens 9 are located at different levels, and the first slow axis collimating lens 7 and the second slow axis collimating lens 10 are located at different levels, so that light beams emitted by the laser chip can pass through the corresponding fast axis collimating lens and the corresponding slow axis collimating lens. Specifically, the first fast axis collimator lens 6 in the present embodiment has a higher level than the second fast axis collimator lens 9, and the first slow axis collimator lens 7 has a higher level than the second slow axis collimator lens 10.

The first reflecting unit includes at least one first reflecting mirror 8, the second reflecting unit includes at least one second reflecting mirror 11, the number of the first reflecting mirrors 8 corresponds to the number of the first laser chips 4, the number of the second reflecting mirrors 11 corresponds to the number of the second laser chips 5, and the level of the first reflecting mirror 8 is higher than the level of the second reflecting mirror 11.

Moreover, the first slow axis collimating lens 7 and the second slow axis collimating lens 10 are overlapped in the vertical direction, the first reflector 8 is positioned between the second fast axis collimating lens 9 and the second slow axis collimating lens 10, and the second reflector 11 is positioned between the first fast axis collimating lens 6 and the first slow axis collimating lens 7, so that the distance between the first light emitting unit and the second light emitting unit can be shortened, and the structure of the laser is more compact.

In addition, the first light emitting units are disposed on one stepped structure, the first laser chips 4 are disposed on different steps, the second light emitting units are disposed on the other stepped structure, and the second laser chips 5 are disposed on different steps. Or in other embodiments, the first laser chips are located on the same horizontal plane, the second laser chips are located on the same horizontal plane, and the first reflector and the second reflector are inclined at a certain angle, so that the light beams emitted by the first laser chips can be combined in the fast axis direction through the first reflector, and the light beams emitted by the second laser chips can be combined in the fast axis direction through the second reflector. Therefore, each first laser chip and each second laser chip are not required to be arranged on a stepped structure, so that the structure of the whole laser is simpler.

Further, the light beam emitted by the first light emitting unit is opposite to the light beam emitted by the second light emitting unit, that is, the first light emitting unit and the second light emitting unit are arranged at different positions, and the first light emitting unit and the second light emitting unit are respectively arranged at two sides of the tube shell 3.

In this embodiment, the light emitting module further includes a third reflector 12, a polarization beam combining prism 13, and a rising mirror 14.

Specifically, the third reflector 12 is configured to reflect the light beam emitted by the second reflecting unit in the first direction, so that the light beam can be reflected in a 90 ° turn and emitted to the light rising mirror 14, and the light rising mirror 14 is configured to change the height of the central light spot emitted by the second light emitting unit, so that the heights of the central light spots emitted by the first light emitting unit and the second light emitting unit are the same. The central light spot refers to a light emitting light spot of a laser chip located in the middle of the same light emitting unit. It can be understood that the principle of the rising mirror 14 is the same as that of a periscope, and the rising mirror is composed of two plane mirrors which are parallel to each other and form an angle of 45 degrees with the horizontal plane, and the positions of a light inlet and a light outlet of the rising mirror 14 can be changed, so that the central light spot can be raised, and the central light spot can be lowered. In this embodiment, the height of the central light spot emitted by the second light emitting unit is raised by the light raising mirror 14, so that the heights of the central light spots emitted by the first light emitting unit and the second light emitting unit are the same. The polarization beam combining prism 13 is used for polarization beam combining of the light beams emitted by the first light emitting unit and the second light emitting unit, and the direction of the light beam after polarization beam combining is the same as that of the light beam emitted by the first reflecting unit. The polarization beam combining prism 13 is provided with a polarizing plate therein, and polarizes the light beams emitted from the first light emitting unit and the second light emitting unit, and then performs polarization beam combining. Of course, in other embodiments, the height of the central light spot emitted by the first light-emitting unit may also be reduced by the light-rising mirror, so that the heights of the central light spots emitted by the first light-emitting unit and the second light-emitting unit are the same.

In addition, the beam combining module comprises at least two beam combining mirrors 15.

Because the two light emitting modules have the same structure, and the heights of the emitted light beams are also the same, the light beams of the two light emitting modules can be spatially combined in the slow axis direction through the beam combining reflection mirror 15 and reflected to the coupling module.

The coupling module includes a focusing lens 17, and the light beam emitted from the beam combining module is coupled into the optical fiber 2 through the focusing lens 17.

Or in other embodiments, the coupling unit includes a slow-axis focusing mirror and a fast-axis focusing mirror, the polarized and combined light beam is reflected by the beam combining mirror and then sequentially coupled into the optical fiber through the fast-axis focusing mirror and the slow-axis focusing mirror, and better coupling effect can be obtained by using the slow-axis focusing mirror and the fast-axis focusing mirror than that of a single focusing lens.

In addition, close bundle module, coupling module and optic fibre 2 and all fix on mosaic plate 1, and the three can carry out an organic whole and seal, and two light emitting module seal alone respectively, can prevent to take place to influence each other like this. Of course, the semiconductor laser may be sealed as a whole.

In this embodiment, the light beam path is: the light beam emitted by the first light emitting unit firstly passes through the first fast axis collimating lens 6 to realize collimation in the fast axis direction, then passes through the first slow axis collimating lens 7 to realize collimation in the slow axis direction, and is reflected to the polarization beam combining prism 13 through the first reflector 8, the light beam emitted by the second light emitting unit firstly passes through the second fast axis collimating lens 9 to realize collimation in the fast axis direction, then passes through the second slow axis collimating lens 10 to realize collimation in the slow axis direction, the collimated light beam is reflected to the third reflector 12 through the second reflector 11, the light beam reflected by the third reflector 12 is emitted to the height of the central light spot through the rising mirror 14, then the polarization beam combining prism 13 is carried out on the light beam emitted by the first light emitting unit and the light beam emitted by the second light emitting unit through the polarization beam combining prism 13 to carry out polarization beam combining, the light beam after the polarization beam combining is reflected to the focusing lens 17 through the beam combining reflector 15, and finally the light beam is coupled into the optical fiber 2 through the focusing lens 17.

Example 2

The present embodiment is different from embodiment 1 in that, as shown in fig. 5 to 7, one combining mirror 15 is provided in the package 3 of one light emitting module, and a focusing lens 17 and another combining mirror 15 are provided in the package 3 of another light emitting module, which makes the structure of the semiconductor laser more compact.

Example 3

The present embodiment is different from embodiment 1 in that, as shown in fig. 8 to 10, one combining mirror 15 is provided in the package 3 of the light emitting module apart from the focusing lens 17, and the focusing lens 17 and the other combining mirror 15 are provided directly on the panel 1, that is, the focusing lens 17 and the other combining mirror 15 are provided outside the light emitting module. Of course, in other embodiments, the focusing lens and one combining mirror may be disposed within the envelope of one light emitting module, with the other combining mirror being disposed directly on the panel, i.e., the other combining mirror being disposed directly outside of the light emitting module.

Example 4

The present embodiment is different from embodiment 1 in that, as shown in fig. 11 to 13, the two light emitting modules have different structures, specifically, a light beam emitted by a first light emitting unit in one of the light emitting modules is reflected to a light rising mirror 14 through a third reflecting mirror 12, the height of a central light spot is reduced through the light rising mirror 14, so that the heights of the central light spots emitted by the first light emitting unit and the second light emitting unit are the same, and then the light beam is emitted to a polarization beam combining prism 13 to be polarized and combined with a light beam emitted by the second light emitting unit; the light beam emitted by the second light emitting unit in the other light emitting module is reflected to the light rising mirror 14 through the third reflecting mirror 12, the height of the central light spot is raised through the light rising mirror 14, so that the heights of the central light spots emitted by the first light emitting unit and the second light emitting unit are consistent, and then the light beam is emitted to the polarization beam combining prism 13 and is polarized and combined with the light beam emitted by the first light emitting unit; in this way, the light beams emitted by the two light emitting modules have different horizontal heights, at this time, the two beam combining reflectors 15 are also arranged at different heights, the two beam combining reflectors 15 are used for realizing the spatial beam combining of the light beams emitted by the two light emitting modules in the fast axis direction, and the combined light beams are finally coupled into the optical fiber 2 through the focusing lens 17.

Example 5

The present embodiment is different from embodiment 4 in that, as shown in fig. 14 to 16, one combining mirror 15 is provided in the package 3 of one light emitting module, and the focusing lens 17 and the other combining mirror 15 are provided in the package 3 of the other light emitting module, which makes it possible to make the structure of the semiconductor laser more compact.

Example 6

The present embodiment is different from embodiment 1 in that, as shown in fig. 17 to 19, the first light emitting unit and the second light emitting unit in the light emitting module are located on the same side of the package 3, and the light beam emitted from the first laser chip 4 and the light beam emitted from the second laser chip 5 have the same direction. Thereby, the positions of the second fast axis collimating lens 9, the second slow axis collimating lens 10 and the second reflecting mirror 11, which are associated with the second light emitting unit, are also changed. The first reflecting unit and the second reflecting unit are arranged side by side, that is, the first reflecting mirror 8 and the second reflecting mirror 11 are staggered with each other and arranged along the first direction, and spatial beam combination of the light beam emitted by the first light emitting unit and the light beam emitted by the second light emitting unit in the slow axis direction can be realized through angular deflection of the first reflecting unit and the second reflecting unit. Since the spatial beam combination of the light beam emitted by the first light emitting unit and the light beam emitted by the second light emitting unit is realized by the first reflecting unit and the second reflecting unit, the light emitting module does not need to be provided with the third reflecting mirror 12, the polarization beam combining prism 13 and the light rising mirror 14. In addition, the beam combining module comprises a beam combining reflector 15 and at least one polarizing plate 16, the beam combining reflector 15 is used for reflecting the light beam emitted by one light emitting module far away from the coupling module to the polarizing plate 16, the polarizing plate 16 is used for polarizing and combining the light beams emitted by the light emitting modules, and the polarized and combined light beam is finally coupled into the optical fiber 2 through the focusing lens 17.

While the foregoing is directed to embodiments of the present invention, other modifications and variations of the present invention may be devised by those skilled in the art in light of the foregoing teachings. It should be understood by those skilled in the art that the foregoing detailed description is for the purpose of better explaining the present invention, and the scope of the present invention should be determined by the scope of the appended claims.

Claims (10)

1. A semiconductor laser is characterized by comprising a mosaic plate, and a beam combination module, a coupling module and at least two light emitting modules which are arranged on the mosaic plate;

the light-emitting modules are arranged side by side, and the bottoms of the light-emitting modules penetrate through the mosaic plate and protrude from the bottom surface of the mosaic plate;

the beam combining module is used for combining the light beams emitted by the light emitting modules;

and the coupling module is used for coupling the combined light beam into the optical fiber.

2. The semiconductor laser of claim 1, wherein a bottom of each of said light emitting modules is flush.

3. The semiconductor laser of claim 1, wherein the light emitting module comprises a package, and a first light emitting unit, a second light emitting unit, a first shaping unit, a second shaping unit, a first reflecting unit, and a second reflecting unit disposed within the package;

the first light-emitting unit is provided with at least one first laser chip which is arranged side by side along a first direction, and the first laser chip emits light beams along a second direction; the second light-emitting unit is provided with at least one second laser chip which is arranged side by side along a first direction, and the second laser chip emits light beams along a second direction;

the first shaping unit is used for shaping the light beam emitted by the first light emitting unit, the second shaping unit is used for shaping the light beam emitted by the second light emitting unit, the first reflecting unit is used for reflecting the light beam emitted by the first shaping unit along a first direction, and the second reflecting unit is used for reflecting the light beam emitted by the second shaping unit along the first direction.

4. The semiconductor laser of claim 3, wherein the first and second light emitting units are located at different levels, and wherein the first and second shaping units are located at different levels.

5. The semiconductor laser according to claim 4, wherein the first shaping unit comprises a first fast-axis collimating lens and a first slow-axis collimating lens, and the light beam emitted from the first laser chip sequentially passes through the first fast-axis collimating lens and the first slow-axis collimating lens along a first direction; the second shaping unit comprises a second fast axis collimating lens and a second slow axis collimating lens, and light beams emitted by the second laser chip sequentially pass through the second fast axis collimating lens and the second slow axis collimating lens along a first direction; the first fast axis collimating lens and the second fast axis collimating lens are located at different levels, and the first slow axis collimating lens and the second slow axis collimating lens are located at different levels;

the first reflecting unit includes at least one first mirror, and the second reflecting unit includes at least one second mirror.

6. The semiconductor laser of claim 3, wherein the first light emitting units are disposed on a stepped structure, each of the first laser chips being disposed on a different step, the second light emitting units being disposed on another stepped structure, each of the second laser chips being disposed on a different step.

7. A semiconductor laser as claimed in claim 3 wherein the light emitting module further comprises a third reflector, a polarization beam combining prism, and a beam rising mirror;

the third reflector is configured to reflect the light beams emitted by the first reflecting unit or the second reflecting unit in a first direction, the beam expander is configured to change heights of central light spots emitted by the first light emitting unit or the second light emitting unit, so that the heights of the central light spots emitted by the first light emitting unit and the second light emitting unit are the same, and the polarization beam combining prism is configured to polarize and combine the light beams emitted by the first light emitting unit and the second light emitting unit.

8. The semiconductor laser of claim 7, wherein the combining module comprises at least two combining mirrors;

the beam combining reflection mirror is used for reflecting the light beams emitted by the light emitting modules to the coupling module.

9. The semiconductor laser of claim 7, wherein the first and second reflecting units are arranged side-by-side; the beam combining module comprises a beam combining reflecting mirror and at least one polaroid, the beam combining reflecting mirror is used for reflecting the light beam emitted by one light emitting module far away from the coupling module to the polaroid, and the polaroid is used for polarizing and combining the light beam emitted by each light emitting module.

10. A semiconductor laser as claimed in any one of claims 1 to 9 wherein the coupling module comprises a focusing lens;

or a slow axis focusing mirror and a fast axis focusing mirror.

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