CN115803896A - 单光子雪崩二极管及光电传感装置 - Google Patents
单光子雪崩二极管及光电传感装置 Download PDFInfo
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- CN115803896A CN115803896A CN202080102032.6A CN202080102032A CN115803896A CN 115803896 A CN115803896 A CN 115803896A CN 202080102032 A CN202080102032 A CN 202080102032A CN 115803896 A CN115803896 A CN 115803896A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/107—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier working in avalanche mode, e.g. avalanche photodiodes
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- Condensed Matter Physics & Semiconductors (AREA)
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- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Light Receiving Elements (AREA)
Abstract
一种单光子雪崩二极管(SPAD)及光电传感装置，涉及光电技术领域，能够降低雪崩结(A)的击穿电压；该单光子雪崩二极管(SPAD)包括：衬底(10)以及外延层(20)；外延层(20)中包括第一型掺杂区(21)和第二型掺杂区(22)、第一型边缘掺杂区(S1)和第二型边缘掺杂区(S2)；第一型边缘掺杂区(S1)环绕设置于第一型掺杂区(21)的四周；第二型边缘掺杂区(S2)中包括：位于第二型掺杂区(22)的四周、且与第一型边缘掺杂区(S1)相对设置的部分；第一型边缘掺杂区(S1)与第一型掺杂区(21)的掺杂类型相同，第一型边缘掺杂区(S1)的掺杂浓度小于第一型掺杂区(21)的掺杂浓度；第二型边缘掺杂区(S2)与第二型掺杂区(22)的掺杂类型相同，第二型边缘掺杂区(S2)的掺杂浓度小于第二型掺杂区(22)的掺杂浓度；第一型掺杂区(21)和第二型掺杂区(22)的掺杂类型相反。
Description
PCT国内申请，说明书已公开。
Claims (16)
- PCT国内申请，权利要求书已公开。
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/CN2020/138057 WO2022133660A1 (zh) | 2020-12-21 | 2020-12-21 | 单光子雪崩二极管及光电传感装置 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN115803896A true CN115803896A (zh) | 2023-03-14 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202080102032.6A Pending CN115803896A (zh) | 2020-12-21 | 2020-12-21 | 单光子雪崩二极管及光电传感装置 |
Country Status (2)
| Country | Link |
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| CN (1) | CN115803896A (zh) |
| WO (1) | WO2022133660A1 (zh) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116031324A (zh) * | 2023-03-29 | 2023-04-28 | 季华实验室 | 一种单光子雪崩二极管及制作方法 |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7262402B2 (en) * | 2005-02-14 | 2007-08-28 | Ecole Polytechnique Federal De Lausanne | Integrated imager circuit comprising a monolithic array of single photon avalanche diodes |
| JP6090060B2 (ja) * | 2013-08-23 | 2017-03-08 | 株式会社豊田中央研究所 | シングルフォトンアバランシェダイオード |
| FR3041817B1 (fr) * | 2015-09-30 | 2017-10-13 | Commissariat Energie Atomique | Photodiode de type spad |
| CN108039390A (zh) * | 2017-11-22 | 2018-05-15 | 天津大学 | 非接触式保护环单光子雪崩二极管及制备方法 |
| CN110767767A (zh) * | 2018-07-25 | 2020-02-07 | 苏州超锐微电子有限公司 | 一种双保护环结构的新型spad探测器 |
-
2020
- 2020-12-21 WO PCT/CN2020/138057 patent/WO2022133660A1/zh active Application Filing
- 2020-12-21 CN CN202080102032.6A patent/CN115803896A/zh active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116031324A (zh) * | 2023-03-29 | 2023-04-28 | 季华实验室 | 一种单光子雪崩二极管及制作方法 |
| CN116031324B (zh) * | 2023-03-29 | 2023-06-09 | 季华实验室 | 一种单光子雪崩二极管及制作方法 |
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| Publication number | Publication date |
|---|---|
| WO2022133660A1 (zh) | 2022-06-30 |
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