CN115735250A - 一种位线读取电路及存储器 - Google Patents
一种位线读取电路及存储器 Download PDFInfo
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- CN115735250A CN115735250A CN202080102340.9A CN202080102340A CN115735250A CN 115735250 A CN115735250 A CN 115735250A CN 202080102340 A CN202080102340 A CN 202080102340A CN 115735250 A CN115735250 A CN 115735250A
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- transistor
- bit line
- pole
- line
- memory
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
- G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
- G11C11/414—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the bipolar type
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
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Abstract
一种位线读取电路及存储器，该位线读取电路，在从存储单元中读取电平时，两个灵敏放大器同步工作，在灵敏放大器对位线和参考线上的电压进行差分放大之后，读出控制模块就可以将位线的电平输出。在读出控制模块输出位线的电平时，由于两个灵敏放大器可以一起增强位线上的电压值，从而避免位线上的电压值快速改变。
Description
PCT国内申请，说明书已公开。
Claims (10)
- PCT国内申请，权利要求书已公开。
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/CN2020/103903 WO2022016476A1 (zh) | 2020-07-23 | 2020-07-23 | 一种位线读取电路及存储器 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN115735250A true CN115735250A (zh) | 2023-03-03 |
Family
ID=79729940
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202080102340.9A Pending CN115735250A (zh) | 2020-07-23 | 2020-07-23 | 一种位线读取电路及存储器 |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN115735250A (zh) |
| WO (1) | WO2022016476A1 (zh) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116959525A (zh) * | 2022-04-20 | 2023-10-27 | 华为技术有限公司 | 一种位线读取电路、存储器及电子设备 |
| CN115240732A (zh) * | 2022-07-29 | 2022-10-25 | 华中科技大学 | 一种1s1c存储器数据读取方法及系统 |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100573702C (zh) * | 2008-08-25 | 2009-12-23 | 北京芯技佳易微电子科技有限公司 | 一种随机存储器及其供电方法 |
| JP5410073B2 (ja) * | 2008-11-05 | 2014-02-05 | ルネサスエレクトロニクス株式会社 | 半導体記憶装置及び半導体記憶装置の動作方法 |
| CN101656097B (zh) * | 2009-08-28 | 2012-09-26 | 苏州东微半导体有限公司 | 应用于半导体存储器的灵敏放大器电路及其工作方法 |
| CN102034534B (zh) * | 2010-12-31 | 2012-12-19 | 东南大学 | 一种亚阈值存储阵列电路 |
| CN109658962B (zh) * | 2018-12-19 | 2021-06-29 | 哈尔滨工业大学 | 一种抗单粒子多节点翻转的近阈值sram存储单元 |
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2020
- 2020-07-23 CN CN202080102340.9A patent/CN115735250A/zh active Pending
- 2020-07-23 WO PCT/CN2020/103903 patent/WO2022016476A1/zh active Application Filing
Also Published As
| Publication number | Publication date |
|---|---|
| WO2022016476A1 (zh) | 2022-01-27 |
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