CN115712180A - 带有光子和竖直电力输送的asic封装 - Google Patents

带有光子和竖直电力输送的asic封装 Download PDF

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CN115712180A
CN115712180A CN202211375397.3A CN202211375397A CN115712180A CN 115712180 A CN115712180 A CN 115712180A CN 202211375397 A CN202211375397 A CN 202211375397A CN 115712180 A CN115712180 A CN 115712180A
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asic
package
substrate
photonic
die
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权云星
纳姆胡恩·金
特克久·康
浦田良平
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Abstract

本公开涉及带有光子和竖直电力输送的ASIC封装。IC封装可以包括基板。IC管芯可以安装到基板。一个或多个光子模块可以附接到基板,并且一个或多个串行化器/并行化器(SerDes)接口可以将IC管芯连接到一个或多个光子模块。IC管芯可以是专用集成电路(ASIC)管芯,并且一个或多个光子模块可以包括光子集成电路(PIC)和光纤阵列。一个或多个光子模块可以安装到一个或多个附加基板,该附加基板可以经由一个或多个插座附接到基板。

Description

带有光子和竖直电力输送的ASIC封装
分案说明
本申请属于申请日为2020年8月14日的中国发明专利申请202010817738.2的分案申请。
技术领域
本申请涉及一种集成电路(IC)封装,并且涉及一种专用集成电路(ASIC)封装。
背景技术
包括一个或多个ASIC管芯的专用集成电路封装正变得越来越能够进行高速处理。随着ASIC管芯的处理速度不断提高,将ASIC封装与其他部件连接的输入/输出(I/O)系统可能会产生瓶颈。在这方面,I/O系统可能没有足够的带宽来处理ASIC管芯所需的数据吞吐量,从而限制ASIC管芯无法以其全部的潜能来运行。
发明内容
本公开的一个方面提供了一种集成电路(IC)封装,该IC封装包括:基板;IC管芯,该IC管芯安装到基板;一个或多个光子模块,该一个或多个光子模块附接到基板;以及一个或多个串行化器/并行化器(SerDes)接口,该一个或多个SerDes接口将IC管芯连接到一个或多个光子模块。一个或多个SerDes接口可以包括多个铜迹线,并且铜迹线可以放置在基板上。在一些情况下,IC管芯可以是专用集成电路(ASIC)管芯。在一些情况下,IC封装可以被配置成连接到岸面栅格阵列(LGA)插座。电力可以经由LGA插座传输到IC封装。
在一些情况下,一个或多个光子模块可以包括控制器。控制器可以管理在该控制器的相应的光子模块与IC管芯之间的数据传输。一个或多个光子模块中的每一个还可以包括光子集成电路(PIC)和光纤阵列。一个或多个SerDes接口中的每一个可以包括连接到相应的光子模块的第一侧以及连接到IC管芯的相对的第二侧。在一些示例中,一个或多个光子模块可以安装到一个或多个附加基板,并且一个或多个附加基板可以经由一个或多个插座附接到基板。
本公开的另一方面提供了一种专用集成电路(ASIC)封装,该ASIC封装包括:基板;ASIC管芯,该ASIC管芯安装到基板;一个或多个光子模块,该一个或多个光子模块附接到基板;一个或多个串行化器/并行化器(SerDes)接口,该一个或多个SerDes接口将ASIC管芯连接到一个或多个光子模块;以及电压调节器。在一些情况下,电压调节器可以安装到基板的安装有ASIC管芯的相对侧。一个或多个SerDes接口可以包括多个铜迹线,并且铜迹线可以放置在基板上。在一些示例中,基板可以被配置成连接到岸面栅格阵列(LGA)插座,并且电力可以经由LGA插座传输到电压调节器。
在一些情况下,ASIC封装中的一个或多个光子模块中的每一个可以包括控制器,控制器管理在该控制器的相应的光子模块与ASIC管芯之间的数据传输。一个或多个光子模块中的每一个还可以包括光子集成电路(PIC)和光纤阵列。一个或多个SerDes接口可以包括第一侧和相对的第二侧,其中,对于SerDes接口中的每一个,第一侧连接到相应的光子模块,并且相对的第二侧连接到ASIC管芯。一个或多个光子模块可以安装到一个或多个附加基板,并且其中,一个或多个附加基板可以经由一个或多个插座附接到基板。
附图说明
图1是根据本公开的方面的带有集成式I/O接口的ASIC封装的俯视图。
图2是根据本公开的方面的带有集成式I/O接口和电压调节器的ASIC封装的侧剖视图。
图3是根据本公开的方面的带有集成式I/O接口的ASIC封装的侧剖视图。
图4是根据本公开的方面的带有在单独的基板上的集成式I/O接口的ASIC封装的侧剖视图。
图5是根据本公开的方面的带有在单独的基板上的集成式I/O接口和集成式电压调节器的ASIC封装的侧剖视图。
图6是根据本公开的方面的串行化器/并行化器接口的视图。
图7是经由球栅阵列连接到基板的ASIC封装的侧剖视图。
具体实施方式
本技术总体上涉及具有集成式光子模块和竖直集成式电力调节器的专用集成电路(ASIC)封装。如前文描述的,将ASIC封装与其他部件连接的I/O系统可能没有足够的带宽来处理ASIC管芯所需的数据吞吐量。为了解决这个问题,可以使用具有大约100Gbps带宽的I/O系统来减少I/O系统瓶颈。然而,这些I/O系统通常经由外部连接经由接口连接到ASIC封装。随着接口的带宽增加以处理I/O系统的吞吐量,在I/O系统与ASIC管芯之间运载信号的接口的迹线可能引起信号损耗,诸如通过高频滚降。从ASIC管芯到位于外部的I/O系统的接口的迹线长度可能会加剧信号损耗。
为了减少接口上的信号损耗量,接口的迹线行进所穿过的基板可以由具有低介电常数(Dk)和介电损耗(Df)的材料制成。此外,可以减小迹线表面的粗糙度以进一步限制信号损耗量。然而,即使使用低Dk和Df材料以及平滑的迹线,也只能实现信号损耗量的少量改善。
为了移除或进一步补救信号损耗的问题,可以将包括光子模块的I/O系统集成到ASIC封装中。通过集成光子模块,可以减少将光子模块连接到ASIC管芯的迹线的长度,从而使信号损耗最小化。在这方面,接口的迹线的长度可以集成到低Dk和Df PCB中。可能将ASIC管芯连接到外部I/O系统的迹线可能为大约10英寸。在以100Gbps运行期间,10英寸的迹线可能经历大约20dB的信号损耗。
通过将光子模块集成到ASIC封装中并将光子模块220A和220B附接到与ASIC管芯221相同的基板(如图1中ASIC封装201的俯视剖视图所示),可以减少迹线291A和292B的长度。在这方面,从ASIC管芯210到集成式光子模块220A和220B的接口中的迹线291A和291B可以减小到大约40-50mm。因此,在100Gbps的运行速度下,相对于在将ASIC管芯与ASIC封装外部的I/O系统连接的接口上的信号损耗,信号损耗量可以减少大约10dB。这样,接口迹线所集成到的PCB可以具有更高的Dk和Df值,这可以节省材料成本、生产成本,同时仍然提供改善的信号传输。在甚至更高的运行速度(诸如200Gbps或更高)下,可以继续实现这些优势。
图2至图5示出了带有集成式光子模块的ASIC封装配置的示例。例如,并且如图2所示,ASIC封装201包括经由插座203安装到基板202的ASIC管芯210。插座可以是球栅阵列(BGA)、岸面栅格阵列(LGA)、引脚栅格阵列(PGA)或其他此类插座连接。ASIC封装201还包括光子模块(如虚线框220A和220B所示),该光子模块包括光纤阵列226A、226B、光子集成电路(PIC)224A、224B和控制器222A、222B,其可以用作用于ASIC封装的I/O系统。光子模块220A和220B可以附接到基板,诸如图2中进一步示出的基板202。如本文描述的,光子模块220A和220B的附接可以是永久的或经由可移除的连接。由图2中的双向箭头线290A和290B所示的接口,诸如串行化器/并行化器(SerDes)接口(本文描述的),将光子模块220A和220B连接到ASIC管芯210。
ASIC封装201还可以包括电压调节器230,该电压调节器安装到基板202的安装有ASIC管芯210的相对侧。如图2中的虚线箭头232所示,电力可以通过电压调节器230传输到ASIC管芯210。ASIC封装201可以被配置成连接到插座(诸如LGA插座280),通过该插座可以将来自外部电源(由双向虚线箭头231所示)的电力提供给电压调节器230。ASIC封装201可以包括壳体(诸如壳体207),ASIC封装201的部件位于该壳体中。
光子模块(诸如光子模块220A和220B)可以包括任意数量的部件,该部件包括光纤阵列226A、226B、光子集成电路(PIC)224A、224B和/或控制器222A、222B。光子模块中的部件可以是分立元件和/或元件组合。例如,光纤阵列可以集成到PIC中和/或PIC可以集成到控制器中。
光纤阵列(诸如光纤阵列226A和226B)可以是一个或多个光纤电缆的集合,这些光纤电缆能够将光信号运入或运出ASIC封装(诸如ASIC封装201)。光纤阵列可以是光纤电缆的一维(1D)阵列或二维(2D)阵列。光纤阵列可以经由侧面或竖直耦合被耦合到PIC。
光纤阵列可以安装到支撑件上。例如,并且如图2所示,光纤阵列226A安装到支撑件228A上,并且光纤阵列226B安装到支撑件228B上。支撑件可以将光纤阵列附接到基板,诸如基板202。取决于支撑件的形状和尺寸,可以调节光纤阵列的物理高度和定位。例如,通过增加支撑件(诸如支撑件228A)的高度,附接到该支撑件的光纤阵列226A可以定位成更远离基板202并且在ASIC封装201中更高。在一些情况下,支撑件228A、228B可以被配置成使光纤阵列226A、226B相对于基板以特定角度定位。
光子集成电路(诸如PIC 224A和224B)可以被配置成将电信号转换成光信号和/或将光信号转换成电信号。例如,并且参考图2,ASIC封装201包括两个光子模块220A和220B,每个光子模块包括PIC 224A和224B。第一PIC 224A可以被配置成从所附接的光纤阵列226A接收光信号并将光信号转换成电信号。然后,第一PIC可以将电信号传到所附接的控制器222A。第二PIC 224B可以被配置成从所附接的控制器222B接收电信号并将电信号转换成光信号,以通过所附接的光纤阵列226B从ASIC封装传出。在一些情况下,PIC可以包括一个或多个波导,以用于在PIC与光纤阵列之间引导光信号。
控制器可以用于引导ASIC管芯与PIC之间的电信号流。例如,并且如图2所示,ASIC封装201包括两个控制器222A和222B。控制器222A和22B可以是配置成对信号进行调制或解调的跨阻放大器(TIA)和/或集成电路(IC)。例如,控制器222A可以从PIC 224A接收调制信号,诸如已经使用4级脉冲幅度调制(PAM4)或一些其他类型的调制来调制的信号。控制器222A可以对信号进行解调,并将其通过接口(诸如接口290A)传到ASIC管芯210。控制器222B可以通过接口290B从ASIC管芯210接收未调制的信号。控制器222B可以使用PAM4或一些其他调制来进行调制,并将调制后的信号传到PIC224A。在一些情况下,控制器可以放大信号或对该信号执行其他数字信号处理。
光子模块可以经由接口(诸如SerDes接口)连接到ASIC管芯。例如,并且如图2所示,SerDes接口(由双向箭头290A和290B示出)将ASIC管芯210连接到两个光子模块220A和220B。回到参考图1,SerDes接口可以包括迹线的集合(诸如铜迹线291A和291B),该迹线将ASIC管芯210连接到光子模块220A和220B。铜迹线291A和291B可以直接印刷到基板上和/或经由导线实现。
在接口的迹线的每一端处可以是串行化器和/或并行化器,该串行化器和/或并行化器可以连接到管芯和/或光子模块。在这方面,迹线的每一端可以包括串行化器和并行化器,以允许在迹线上的双向通信。例如,并且如图6中的接口290A的分解图所示,在一些迹线291A的第一端上的串行化器293A连接到在迹线291A的相对侧上的并行化器294B。类似地,串行化器293B与并行化器294A位于迹线的相对侧。尽管在每个SerDes接口290A和290B中示出了仅9个迹线,但在接口中可以有任意数量的迹线。在一些情况下,串行化器和并行化器可以集成到控制器和/或ASIC中。在一些示例中,串行化器和并行化器可以集成到组合的串行化器/并行化器中。
在运行中,串行化器293A、293B可以将并行信号转换成串行信号以用于在迹线291A上传输。迹线291A的另一端上的并行化器294A、294B然后可以将串行信号转换回并行信号。
光子模块的部件可以安装到与ASIC管芯相同的基板和/或不同的基板。例如,并且如图2和图3所示,光子模块220A,220B的部件安装到与ASIC管芯210相同的基板(基板202)上。通过将光子模块220A、220B安装到与ASIC管芯相同的基板,可以避免基板之间的SerDes接口290A、290B的垂直跃迁,从而减少可能引起信号损耗的阻抗。
在图4和图5中,与光子模块220A、220B相比的两个光子模块420A和420B的部件分别安装到不同的基板403A和403B。这两个基板403A和403B均不同于安装有ASIC管芯410的基板402。
如图4和图5进一步所示,安装有光子模块的基板403A和403B可以连接到安装有ASIC管芯410的基板402。该连接可以经由高速插座和/或焊接而形成,诸如将基板403A连接到基板402的插座415A和将基板403B连接到基板402的插座415B。尽管图4和图5示出了光子模块420A和420B分别安装到不同的基板403A和403B,光子模块420A和420B也可以安装在相同的基板上。基板可以是印刷电路板(PCB)或其他合适的材料。
在与ASIC管芯不同的基板上具有光子模块的ASIC封装可以包括将光子模块通过基板连接到ASIC管芯的接口。例如,并且分别如图4和图5中的ASIC封装401和501所示,由双箭头线490A和490B示出的SerDes接口可以将光子模块420A和420B与ASIC管芯410连接。在这方面,SerDes接口490A可以穿过插座415A行进,以将基板403A上的光子模块420A与基板402上的ASIC管芯410连接。类似地,SerDes接口490B可以穿过插座415B行进,以将基板403B上的光子模块420B与基板402上的ASIC管芯410连接。
通过将光子模块420A和420B安装在不同的基板上(诸如在图4和图5的ASIC封装401和501中所示),SerDes接口中的迹线的长度可以比当光子模块安装在与ASIC管芯相同的基板上(诸如在图2和图3的ASIC封装201和301中所示)时更长。当光子模块在不同的基板上时,SerDes接口的增加的长度可能会随着信号行进SerDes迹线而增加信号损耗,并且可能增加部件之间的信号行进时间的行进时间。然而,相对于ASIC封装201和301,可以改善ASIC封装401和501的生产成品率,这是因为可以换出损坏的部件(例如,损坏的光子模块、损坏的ASIC管芯等)而无需更换整个ASIC封装。
ASIC管芯(诸如ASIC管芯210和410)的处理速度的增加也可以增加运行ASIC管芯所需的电量。在这方面,并且如图7所示,ASIC封装701可以经由球栅阵列(BGA)716连接到电源(未示出)。BGA716可以包括形成在ASIC封装701的基座上的多个焊锡球,诸如焊锡球714。焊锡球可以与形成在待安装ASIC封装701的基板780上的对应焊盘(诸如铜焊盘715)对准。焊锡球被焊接到其对应的焊盘,以将ASIC封装701永久地安装到基板780。例如,焊锡球714被焊接到对应的焊盘715以形成焊点。电源可以通过BGA 716的焊点以及基板702内的导线和/或其他此类连接(未示出)将电力传输到ASIC管芯710,并且在一些情况下传输到光子模块720A和720B,如虚线箭头731所示。
由于由导线和/或通过ASIC封装710和基板702将电力运送到ASIC管芯710的其他此类连接所产生的铜损耗,由ASIC管芯710汲取的电力的增加可能导致ASIC封装内的热量的增加。铜损耗,也称为“I2R损耗”(其中“I”是流过布线中的铜的电流,并且“R”是布线的电阻),是随着电流穿过布线而散发的热量。由ASIC管芯710的增加的能耗所产生的温度升高可能导致BGA焊料电迁移以及一个或多个焊点的潜在故障。温度的升高也可能影响ASIC管芯710的热性能,从而可能导致ASIC管芯710或ASIC封装701的其他部件的故障。
为了减少由导线、平面(例如,铜平面)和/或通过ASIC封装将电力运送到ASIC管芯的其他此类连接所产生的铜损耗量,可以将电压调节器集成到ASIC封装。例如,如图2的ASIC封装201中所示,电压调节器230安装到基板202的安装有ASIC管芯210的相对侧。并且如图5的ASIC封装501中所示,电压调节器530安装到基板402的安装有ASIC管芯410的相对侧。电力可以从外部电源传输到电压调节器230、530。在这方面,外部电源可以通过待安装ASIC封装的插座分别向电压调节器230、530提供电力,如图2和图5中的虚线双箭头231和531分别所示。然后,电压调节器230、530可以经由基板上或基板内的一个或多个导线、平面(例如,铜平面)和/或其他此类连接向ASIC管芯210、410供电。
电压调节器可以维持来自外部电源的一致的能耗,从而防止或减少由基板上或基板内的导线、迹线和/或其他此类连接所运载的电力增加的数量。此外,电压调节器与ASIC管芯(诸如ASIC管芯210和410)之间的导线、迹线和/或其他此类连接的长度相对于当由ASIC管芯210和410直接从外部电源接收电力时可以减小,分别如图3和图4中的虚线箭头331和431所示。由于ASIC封装上的插座触点(诸如ASIC封装201的触点215)通常具有高接触电阻,所以流经触点215的电力所产生的热损耗可能很大。通过将电压调节器移动到ASIC封装中,可以减少流经触点215的电量。因此,可以减少由铜损耗在ASIC封装201和501内产生的热量。尽管电压调节器230和530被示出为位于ASIC管芯210和410的正下方,但电压调节器可以偏离ASIC管芯。
通过使用散热器和散热体可以进一步减少热量。例如,并且如图2和图3所示,散热体240可以定位在ASIC管芯210的周围,以将由ASIC管芯210产生的热量带离ASIC管芯210。类似地,散热体440可以定位在ASIC管芯410的周围,以将由ASIC管芯410产生的热量带离ASIC管芯410。
散热器可以定位在ASIC封装的内部,以从封装的内部带走热量(诸如由光子模块和ASIC管芯产生的热量)并将其导向ASIC封装的壳体。例如,并且如图2和图3所示,散热器250可以定位在ASIC管芯210和散热体240上方。散热器250可以从ASIC管芯210和散热体240带走热量。类似地,散热器450可以从ASIC管芯410和散热体240带走热量。
如上文描述的,典型的ASIC封装可以经由焊接到球栅阵列(BGA)上的引脚连接到电源。然而,考虑到具有集成式光子模块和/或电压调节器的ASIC封装的较大尺寸,可以使用LGA插座,如图2至图5中的LGA插座280和480。参考图2,LGA插座280可以包括引脚214,该引脚与形成在基板202上的触点215对准。当ASIC封装201被布置成使得触点215与引脚214对准时,ASIC封装201可以固定到LGA插座280。在一些情况下,引脚214可以焊接到触点215。然而,引脚214可以提供与ASIC封装的触点215的充分接触,以减少对焊点的需求,从而减少焊料电迁移的风险。代替焊接或除焊接之外,闩锁或其他此类锁定部件也可以维持ASIC封装201固定在LGA插座280中。在ASIC封装201不焊接到LGA插座280的情况下,ASIC封装201可以从LGA插座280移除。
尽管图2至图5所示的示例ASIC封装201、301、401和501仅包括单个ASIC管芯210或410,但每个ASIC封装可以包括任意数量的ASIC管芯。此外,每个ASIC封装可以包括任意数量的光子模块、光子模块内的部件、电压调节器或其他部件。另外,尽管本文描述的封装被描述为具有ASIC管芯的ASIC封装,但可以使用任何类型的管芯,诸如集成电路管芯。
本文描述的特征允许将光子模块集成到ASIC封装中。这样,可以减少或消除I/O系统瓶颈。此外,可以减少光子模块与ASIC管芯之间的连接接口上的信号损耗。另外,通过将电压调节器集成到ASIC封装中,可以减少由通过ASIC封装向ASIC管芯运送电力的导线、迹线和/或其他此类连接所产生的铜损耗。将ASIC封装配置成安装到LGA插座可以减少焊点损坏和焊料电迁移的风险,并提供根据需要移除ASIC封装的能力。
尽管本文已经参考特定实施例描述了本发明,但应当理解,这些实施例仅是本发明的原理和应用的说明。因此,应当理解,在不脱离由所附权利要求书限定的本发明的精神和范围的情况下,可以对说明性实施例进行多种修改并且可以设计其他布置。

Claims (20)

1.一种集成电路(IC)封装,包括:
第一基板;
一个或多个附加基板;
IC管芯,所述IC管芯安装到所述第一基板的第一表面;
一个或多个光子模块,其中,所述一个或多个光子模块中的每一个安装到所述一个或多个附加基板中的至少一个;和
电压调节器,所述电压调节器安装在所述第一基板的第二表面上、直接位于所述IC管芯下方,其中,所述第一基板的所述第二表面与所述第一基板的所述第一表面相对。
2.根据权利要求1所述的IC封装,进一步包括:
一个或多个串行化器/并行化器(SerDes)接口,所述一个或多个SerDes接口直接将所述IC管芯连接到所述一个或多个光子模块。
3.根据权利要求2所述的IC封装,其中,所述一个或多个SerDes接口包括多个铜迹线;并且
其中,所述铜迹线放置在所述基板上。
4.根据权利要求3所述的IC封装,其中,所述一个或多个SerDes接口中的每一个包括第一侧和第二、相对侧,
其中,对于所述一个或多个SerDes接口中的每一个,所述第一侧连接到所述一个或多个光子模块中的相应的一个光子模块,并且所述第二、相对侧连接到所述IC管芯。
5.根据权利要求1所述的IC封装,其中,所述一个或多个光子模块中的每一个包括控制器,其中,每个控制器管理在该控制器的相应的光子模块与所述IC管芯之间的数据传输。
6.根据权利要求5所述的IC封装,其中,所述一个或多个光子模块中的每一个还包括光子集成电路(PIC)和光纤阵列。
7.根据权利要求1所述的IC封装,其中,所述IC封装被配置成连接到岸面栅格阵列(LGA)插座。
8.根据权利要求7所述的IC封装,其中,电力经由所述LGA插座传输到所述IC封装。
9.根据权利要求1所述的IC封装,其中,所述一个或多个附加基板中的每一个经由一个或多个插座附接到所述第一基板。
10.根据权利要求1所述的IC封装,其中,所述一个或多个附加基板中的每一个以能移除方式被安装。
11.一种专用集成电路(ASIC)封装,包括:
第一基板;
一个或多个附加基板;
ASIC管芯,所述ASIC管芯安装到所述第一基板的第一表面;
一个或多个光子模块,其中,所述一个或多个光子模块中的每一个安装到所述一个或多个附加基板中的至少一个;和
电压调节器,所述电压调节器安装在所述第一基板的第二表面上、直接位于所述ASIC管芯下方,其中,所述第一基板的所述第二表面与所述第一基板的所述第一表面相对。
12.根据权利要求11所述的ASIC封装,进一步包括:
一个或多个串行化器/并行化器(SerDes)接口,所述一个或多个SerDes接口直接将所述ASIC管芯连接到所述一个或多个光子模块。
13.根据权利要求12所述的ASIC封装,其中,所述一个或多个SerDes接口包括多个铜迹线;并且
其中,所述铜迹线放置在所述基板上。
14.根据权利要求13所述的ASIC封装,其中,所述一个或多个SerDes接口中的每一个包括第一侧和第二、相对侧,
其中,对于所述一个或多个SerDes接口中的每一个,所述第一侧连接到所述一个或多个光子模块中的相应的一个光子模块,并且所述第二、相对侧连接到所述ASIC管芯。
15.根据权利要求11所述的ASIC封装,其中,所述一个或多个光子模块中的每一个包括控制器,其中,每个控制器管理在该控制器的相应的光子模块与所述ASIC管芯之间的数据传输。
16.根据权利要求15所述的ASIC封装,其中,所述一个或多个光子模块中的每一个还包括光子集成电路(PIC)和光纤阵列。
17.根据权利要求11所述的ASIC封装,其中,所述ASIC封装被配置成连接到岸面栅格阵列(LGA)插座。
18.根据权利要求17所述的ASIC封装,其中,电力经由所述LGA插座传输到所述电压调节器。
19.根据权利要求11所述的ASIC封装,其中,所述一个或多个附加基板中的每一个经由一个或多个插座附接到所述第一基板。
20.根据权利要求11所述的ASIC封装,其中,所述一个或多个附加基板中的每一个以能移除方式被安装。
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