CN115516629A - 光电装置以及光电集成结构 - Google Patents

光电装置以及光电集成结构 Download PDF

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Publication number
CN115516629A
CN115516629A CN202080100691.6A CN202080100691A CN115516629A CN 115516629 A CN115516629 A CN 115516629A CN 202080100691 A CN202080100691 A CN 202080100691A CN 115516629 A CN115516629 A CN 115516629A
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China
Prior art keywords
substrate
conductive
pic
electrically connected
eic
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CN202080100691.6A
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English (en)
Inventor
张胜利
汤富生
杨明
王猛
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Huawei Technologies Co Ltd
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Huawei Technologies Co Ltd
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Publication of CN115516629A publication Critical patent/CN115516629A/zh
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/28Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/16Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Led Device Packages (AREA)

Abstract

本申请实施例提供的光电装置和光电集成结构,能够降低工艺复杂度和制造成本。该光电装置包括:第一基板,该第一基板的第一表面上分别设置有专用集成电路ASIC、第二基板和光子集成电路PIC,该第一表面上形成有该第一基板的电路走线;倒装堆叠在该第二基板和该PIC上的电子集成电路EIC,该EIC与该PIC电连接;贯穿该第二基板的第二表面和该第二基板的第三表面的至少一个导电通孔,该EIC通过该至少一个导电通孔和该第一基板的该电路走线与该第一基板上设置的该ASIC电连接,该第二表面为该第二基板沿该第二基板的厚度方向远离该第一基板的表面,该第三表面为该第二基板沿该第二基板的厚度方向靠近该第一基板的表面。

Description

PCT国内申请,说明书已公开。

Claims (14)

  1. PCT国内申请,权利要求书已公开。
CN202080100691.6A 2020-12-23 2020-12-23 光电装置以及光电集成结构 Pending CN115516629A (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/CN2020/138618 WO2022133801A1 (zh) 2020-12-23 2020-12-23 光电装置以及光电集成结构

Publications (1)

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CN115516629A true CN115516629A (zh) 2022-12-23

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CN202080100691.6A Pending CN115516629A (zh) 2020-12-23 2020-12-23 光电装置以及光电集成结构

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CN (1) CN115516629A (zh)
WO (1) WO2022133801A1 (zh)

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20140151880A1 (en) * 2011-08-19 2014-06-05 Marvell World Trade Ltd. Package-on-package structures
US10001611B2 (en) * 2016-03-04 2018-06-19 Inphi Corporation Optical transceiver by FOWLP and DoP multichip integration
WO2018190952A1 (en) * 2017-04-14 2018-10-18 Google Llc Integration of silicon photonics ic for high data rate
US11315878B2 (en) * 2018-10-31 2022-04-26 Taiwan Semiconductor Manufacturing Company, Ltd. Photonics integrated circuit package

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WO2022133801A1 (zh) 2022-06-30

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