CN115621236B - Copper sheet connecting structure, module and connecting method - Google Patents
Copper sheet connecting structure, module and connecting method Download PDFInfo
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- CN115621236B CN115621236B CN202211636301.4A CN202211636301A CN115621236B CN 115621236 B CN115621236 B CN 115621236B CN 202211636301 A CN202211636301 A CN 202211636301A CN 115621236 B CN115621236 B CN 115621236B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K37/00—Auxiliary devices or processes, not specially adapted to a procedure covered by only one of the preceding main groups
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K37/00—Auxiliary devices or processes, not specially adapted to a procedure covered by only one of the preceding main groups
- B23K37/04—Auxiliary devices or processes, not specially adapted to a procedure covered by only one of the preceding main groups for holding or positioning work
- B23K37/0426—Fixtures for other work
- B23K37/0435—Clamps
- B23K37/0443—Jigs
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- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/367—Cooling facilitated by shape of device
- H01L23/3677—Wire-like or pin-like cooling fins or heat sinks
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3736—Metallic materials
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- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/492—Bases or plates or solder therefor
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/492—Bases or plates or solder therefor
- H01L23/4924—Bases or plates or solder therefor characterised by the materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
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- H—ELECTRICITY
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
- H01L2224/39—Structure, shape, material or disposition of the strap connectors after the connecting process
- H01L2224/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
- H01L2224/401—Disposition
- H01L2224/40151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/40221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/40225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/838—Bonding techniques
- H01L2224/83801—Soldering or alloying
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- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/838—Bonding techniques
- H01L2224/83801—Soldering or alloying
- H01L2224/83815—Reflow soldering
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- H—ELECTRICITY
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/838—Bonding techniques
- H01L2224/8384—Sintering
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Abstract
The invention relates to the technical field of power semiconductor installation and connection, and provides a copper sheet connection structure, a module and a connection method, wherein the copper sheet connection structure comprises a copper sheet, a chip and a welding layer; the chip is provided with a connecting surface for connecting the copper sheet; the copper sheet is provided with a welding surface, and the welding surface is arranged corresponding to the connecting surface; the welding layer sets up between connecting face and welding face, connects face and welding face and passes through welding layer welded connection. Copper or copper alloy compare with aluminium and have lower coefficient of expansion, and numerical value far below traditional aluminium binding line, the welded layer with be connected the face and all have contact interface with the face of weld, so set up can reduce the coefficient of expansion difference between the contact interface in a large number, ensure to connect the contact interface between face and the face of weld and can be when bearing the temperature variation that lasts, still have higher shear strength, the stress variation mechanical fatigue who produces because of the temperature variation that significantly reduces, connection quality is high, the stronger advantage of connection stability.
Description
Technical Field
The invention relates to the technical field of power semiconductor installation and connection, in particular to a copper sheet connection structure, a copper sheet connection module and a copper sheet connection method.
Background
In applications of power supplies and power electronic converters, power semiconductor devices are widely used, and in the case of high power, the power semiconductor devices are generally packaged in a module.
The power module mainly comprises a metal bottom plate, a welding layer, a copper-clad ceramic substrate, an insulating heat dissipation resin film or other insulating heat dissipation materials, a binding line, a shell, silica gel and the like; after the chip is fixed on a heat dissipation material of the copper-clad ceramic substrate by welding, the chip is electrically connected through an aluminum bonding wire and an aluminum tape bonding, the copper-clad ceramic substrate and other insulating heat dissipation materials are welded on a metal base plate by processes such as reflow welding or sintering, heat emitted by the power semiconductor chip is transmitted to the metal base plate through the copper-clad ceramic substrate or other insulating heat dissipation materials, a welding layer is transmitted to the metal base plate, and the heat is dissipated through specially designed cold zone liquid.
The expansion coefficient of the bonded aluminum wire or the aluminum tape is not matched with the expansion coefficient of the silicon-based chip or the silicon carbide chip, the overall numerical value is large in difference, and the mutually unmatched thermal expansion amount can be generated during high and low temperature change, at the moment, the problem of stress change mechanical fatigue can occur on the contact surface between the two materials, and the power cycle life of the power module and the power product can be shortened.
Disclosure of Invention
Therefore, a copper sheet connection structure, a copper sheet connection module and a copper sheet connection method are needed to be provided, and the copper sheet connection structure, the copper sheet connection module and the copper sheet connection method have the advantages of being high in connection quality and strong in connection stability.
A copper sheet connecting structure comprises a copper sheet, a chip and a welding layer;
the chip is provided with a connecting surface for connecting the copper sheet;
the copper sheet is provided with a welding surface, and the welding surface is arranged corresponding to the connecting surface;
the welding layer sets up connect the face with between the face of weld, connect the face with the face of weld passes through welding layer welded connection.
Compared with the prior art, copper or copper alloy have lower coefficient of expansion with aluminium compare, and numerical value is far below traditional aluminium binding line, the welding layer all has contact interface with connecting the face and with the face of weld, so set up the coefficient of expansion difference that can reduce in a large number between the contact interface, ensure to connect the contact interface between face and the face of weld and can be when bearing lasting temperature variation, still have higher shear strength, the stress variation mechanical fatigue who produces because of temperature variation that significantly reduces, the connection reliability between chip and the copper sheet has been ensured, connection quality is high, the advantage that connection stability is stronger.
In one embodiment, the solder layer has a solder material comprising pure silver or a silver alloy.
In one embodiment, the solder layer comprises a silver film.
In one embodiment, the thickness of the copper sheet is set to be 0.1mm-1.0mm.
In one embodiment, the copper sheet is provided with at least one structural feature through hollowing.
In one embodiment, the structural features are provided as kidney-shaped or circular holes.
The application also provides a power module which comprises the copper sheet connecting structure.
In one embodiment, the power module further comprises:
the chip is arranged on the ceramic substrate;
the heat dissipation plate is arranged at the bottom of the ceramic substrate in a bonding mode;
and
the shell covers the ceramic substrate, and the shell and the heat dissipation plate are attached to form a closed cavity for accommodating and mounting the ceramic substrate.
In one embodiment, the closed cavity is filled with gel.
The invention also provides a connecting method of the copper sheet connecting structure, which comprises the following steps:
placing a welding layer on the connecting surface of the chip;
the welding surface of the copper sheet is attached and connected with the connecting surface through the welding layer to obtain a copper sheet connecting mechanism to be welded;
moving the copper sheet connecting mechanism to be welded to a welding working area, and pre-pressing the connecting surface and the welding surface;
and welding the connecting surface to obtain the copper sheet connecting structure.
Compared with the prior art, the welding area formed by the connecting surface and the welding surface of the connection of the copper sheet and the chip is larger, and the larger welding area can also prolong the service life of power cycle. In addition, the conductivity of the copper sheet is improved to a certain extent compared with that of an aluminum material, and when the copper sheet is used for connection, the current-carrying sectional area of the copper sheet is obviously improved compared with that of an aluminum binding line, so that the current-carrying capacity of a power product is greatly improved in both aspects, and the packaging resistance and parasitic inductance of the module are reduced. Moreover, when connection structure draws when being used for automobile-used power device, automobile-used power device needs higher power requirement to requiring automobile-used power device to work under higher work festival, the copper sheet is compared and can adapt to higher work festival temperature in aluminium binding line, benefits from the excellent heat conductivility of copper sheet, and under the equal festival temperature, the temperature that uses the chip on the copper sheet connection distributes more evenly, wholly possesses high use practicality.
Drawings
The accompanying drawings, which are incorporated in and constitute a part of this application, illustrate embodiments of the invention and, together with the description, serve to explain the invention and not to limit the invention.
In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the drawings needed to be used in the description of the embodiments will be briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art to obtain other drawings based on these drawings without creative efforts.
FIG. 1 is a schematic diagram of a specific structure of a connection structure according to an embodiment of the present invention;
fig. 2 is a schematic structural diagram of a power module according to an embodiment of the invention;
fig. 3 is a schematic view of the welding principle of the connection structure in one embodiment of the present invention.
Description of reference numerals:
10. a copper sheet; 101. welding a surface; 102. structural features; 20. a chip; 201. a connection face; 30. welding the layers; 40. a heat dissipation plate; 50. a housing; 60. sealing the cavity; 70. a fixture jig; 80. a ceramic substrate.
Detailed Description
In order to make the aforementioned objects, features and advantages of the present invention comprehensible, embodiments accompanied with figures are described in detail below. In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present invention. This invention may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein.
In the application of power supply and power electronic converter, power semiconductor devices are widely used, wherein the expansion coefficient of a bonding aluminum wire or an aluminum strip is not matched with that of a silicon-based chip or a silicon carbide chip, the integral numerical value difference is large, and when the temperature is changed at high and low temperatures, the thermal expansion amount which is not matched with each other can be generated, at the moment, the problem of stress change mechanical fatigue can occur on the contact surface between the two materials, and the power cycle life of a power module and a power product can be shortened. Based on this, the application provides a copper sheet connection structure, module and connection method, has the advantage that connection quality is high, and connection stability is stronger, and its concrete scheme is as follows:
referring to fig. 1, 2 and 3, the present application provides a copper sheet connection structure, which includes a copper sheet 10, a chip 20 and a soldering layer 30. The chip 20 has a connection surface 201 for connecting the copper sheet 10, the copper sheet 10 has a soldering surface 101, and the soldering surface 101 is disposed corresponding to the connection surface 201. The welding layer 30 is disposed between the connection surface 201 and the welding surface 101, and the connection surface 201 and the welding surface 101 are welded and connected by the welding layer 30.
Compared with the prior art, copper or copper alloy have lower coefficient of expansion with aluminium, and numerical value is far less than traditional aluminium binding line, the welding layer 30 all has contact interface with connecting face 201 and with welding face 101, so set up the coefficient of expansion difference that can reduce in a large number between the contact interface, ensure to connect the contact interface between face 201 and the welding face 101 can be when bearing lasting temperature variation, still have higher shear strength, the stress variation mechanical fatigue who produces because of temperature variation significantly reduces, the connection reliability between chip 20 and copper sheet 10 has been ensured, have connection quality, the stronger advantage of connection stability.
In detail, in this embodiment, the bonding area 101 formed by the bonding surface 201 and the bonding surface 101 of the copper sheet 10 connected to the chip 20 is larger, and the larger bonding area 101 can also enhance the life of the power cycle. In addition, the conductivity of the copper sheet 10 is improved to a certain extent compared with that of an aluminum material, and when the copper sheet 10 is used for connection, the current-carrying sectional area of the aluminum binding line is obviously improved, so that the current-carrying capacity of a power product is greatly improved in both aspects, and the packaging resistance and parasitic inductance of the module are reduced. Moreover, when connection structure draws when being used for automobile-used power device, automobile-used power device needs higher power requirement to requiring automobile-used power device to work under higher work festival, copper sheet 10 compares and can adapt to higher work festival temperature in aluminium binding line, benefits from the excellent heat conductivility of copper sheet 10, under equal festival temperature, uses the temperature distribution of chip 20 that copper sheet 10 connects to get more even, wholly possesses high use practicality. Meanwhile, the stray inductance is low, the current sharing performance is high, the layout design is more flexible, the short-time current impact resistance is high, and the chip temperature distribution is uniform.
In this embodiment, the connection surface 201 and the soldering surface 101 are soldered by vacuum reflow soldering or sintering of the solder layer 30. Among them, vacuum reflow soldering, also called vacuum/controlled atmosphere eutectic furnace, has large thermal capacity and extremely small temperature difference on the surface of PCB, and has been widely applied in fields of Europe and America aviation, aerospace, military industry and electronics, etc. The infrared radiation heating principle is adopted, the welding machine has the characteristics of uniform and consistent temperature, ultralow-temperature safe welding, no temperature difference, no overheating, reliable and stable process parameters, no need of complex process tests, low environmental protection cost operation and the like, and meets the requirements of military products on various welding, small-batch welding and high reliability. In addition, sintering is a traditional process for converting a powdery material into a compact body. People use the process for producing ceramics, powder metallurgy, refractory materials, ultra-high temperature materials and the like for a long time. Generally, after the powder is formed, the dense body obtained by sintering is a polycrystalline material, and the microstructure thereof is composed of crystals, vitreous bodies and pores. The sintering process directly affects the grain size, pore size and grain boundary shape and distribution in the microstructure, thereby affecting the performance of the material. In an embodiment, further refinements are made to the solder layer 30. The soldering layer 30 has a soldering material comprising pure silver or a silver alloy, in particular, the connection surface 201 and the soldering surface 101 are soldered by sintering.
It should be noted that, when silver or silver alloy is used for sintering, the service life and reliability of the copper sheet 10 connection are significantly improved in view of the extremely high operating temperature and high reliability of the sintered silver or silver alloy. Specifically, in this embodiment, the solder material is a silver film, and the solder layer 30 integrally includes the silver film.
Further, the thickness of the copper sheet 10 can be set according to the actual functional requirements, and meanwhile, the thickness of the copper sheet 10 can also be set to be uneven, specifically, the thickness of the copper sheet 10 can be set to be 0.1mm to 1.0mm, and in this embodiment, the thickness of the copper sheet 10 is set to be 1mm.
More preferably, in this embodiment, the copper sheet 10 is openly provided with at least one structural feature 102. The overall heat dissipation efficiency of copper sheet 10 can be improved to copper sheet 10 fretwork setting. In addition, in some mounting structures of copper sheet 10, need pack the gel in the structure to improve overall structure's internal structure stability, when using this connection structure, the structural feature 102 of fretwork can let the gel whole pass through, can improve the whole combination effect of copper sheet 10 and gel, and at this moment, the gel after the solidification can play great location locking performance to copper sheet 10, promotes connection structure's internal structure stability, and structural feature 102 can be waist type hole or circular port setting.
Specifically, in this embodiment, the copper sheet 10 is provided with 3 structural features 102, one of which is a circular hole and the other two of which are kidney-shaped holes.
Referring to fig. 1 and fig. 2, the application further provides a power module, which includes the copper sheet connection structure mentioned in the above scheme. The power module further includes a ceramic substrate 80, a heat dissipation plate 40, and a housing 50, wherein the ceramic substrate 80 is a copper-clad ceramic substrate 80, and the chip 20 is disposed on the ceramic substrate 80. The heat sink 40 is attached to the bottom of the ceramic substrate 80, the case 50 covers the ceramic substrate 80, and the case 50 is attached to the heat sink 40 to form a sealed cavity 60 in which the ceramic substrate 80 is accommodated.
It should be noted that, in this embodiment, there are two chips 20, wherein there are two corresponding soldering surfaces 101 on the copper sheet 10, and the two soldering surfaces 101 are respectively connected to the connecting surfaces 201 of the two chips 20, so that the two chips 20 are electrically connected through the copper sheet 10.
Further, if the copper-clad ceramic substrate 80 is provided with an electrical structure, the soldering surface 101 on the copper sheet 10 can also be soldered to the electrical structure through the soldering layer 30, so as to electrically connect the copper sheet 10 to the electrical structure. Specifically, as shown in the figure, two chips 20 are provided, and the copper sheet 10 is provided with three bonding surfaces 101, wherein two bonding surfaces 101 are bonded to the chips 20, and the other bonding surface 101 is bonded to the electrical structure on the ceramic substrate 80.
Compared with the prior art, copper or copper alloy have lower coefficient of expansion with aluminium, and numerical value is far less than traditional aluminium binding line, the welding layer 30 all has contact interface with connecting face 201 and with welding face 101, so set up the coefficient of expansion difference that can reduce in a large number between the contact interface, ensure to connect the contact interface between face 201 and the welding face 101 can be when bearing lasting temperature variation, still have higher shear strength, the stress variation mechanical fatigue who produces because of temperature variation significantly reduces, the connection reliability between chip 20 and copper sheet 10 has been ensured, have connection quality, the stronger advantage of connection stability.
In this embodiment, the closed cavity 60 is filled with a gel. The copper sheet 10 is provided with a plurality of structural features 102. The overall heat dissipation efficiency of the copper sheet 10 can be improved by the hollowed arrangement of the copper sheet 10. In this power module's overall structure, need pack the gel in the structure, wherein, the gel contains gel, or resin etc. to improve overall structure's inner structure stability, when using this connection structure, the structural feature 102 of fretwork can let the gel wholly pass through, can improve the whole effect of combining of copper sheet 10 and gel, and at this moment, the gel after the solidification can play great location locking performance to copper sheet 10, promotes connection structure's inner structure stability. Specifically, in this embodiment, the structural features 102 are disposed as kidney-shaped holes.
It should be noted that there are various structures for releasing stress and solving the problem of the copper sheet expanding deformation at high temperature, including a structure such as a V-shaped groove formed in the middle region of the copper sheet.
Referring to fig. 2 and fig. 3, the present application further provides a connection method of a copper sheet connection structure, where the connection method of the copper sheet 10 connection structure includes the following steps:
placing the solder layer 30 on the connection face 201 of the chip 20;
attaching and connecting the welding surface 101 of the copper sheet 10 with the connecting surface 201 through the welding layer 30 to obtain a copper sheet 10 connecting mechanism to be welded;
moving the connecting mechanism of the copper sheet 10 to be welded to a welding working area, and pre-pressing the connecting surface 201 and the welding surface 101;
and welding the connecting surface 201 to obtain the copper sheet connecting structure.
Compared with the prior art, the method ensures that the contact interface between the connecting surface 201 and the welding surface 101 still has higher shear strength when bearing continuous temperature change, greatly reduces stress change mechanical fatigue caused by temperature change, ensures the connection reliability between the chip 20 and the copper sheet 10, and has the advantages of high connection quality and stronger connection stability.
In addition, the bonding surface 101 formed by the connecting surface 201 and the bonding surface 101 of the copper sheet 10 connected to the chip 20 has a large area, and the large bonding surface 101 can also enhance the service life of the power cycle. In addition, the conductivity of the copper sheet 10 is improved to a certain extent compared with that of an aluminum material, and when the copper sheet 10 is used for connection, the current-carrying sectional area of the aluminum binding line is obviously improved, so that the current-carrying capacity of a power product is greatly improved in both aspects, and the packaging resistance and parasitic inductance of the module are reduced. Moreover, when connection structure draws when being used for automobile-used power device, automobile-used power device needs higher power requirement to requiring automobile-used power device to work under higher work festival, copper sheet 10 compares and can adapt to higher work festival temperature in aluminium binding line, benefits from the excellent heat conductivility of copper sheet 10, under equal festival temperature, uses the temperature distribution of chip 20 that copper sheet 10 connects to get more even, wholly possesses high use practicality.
Contrary prior art, aluminium binding line in order to guarantee the life of aluminium line in the assembling process, can avoid or reduce the angle value between the different bonding points of aluminium binding line as far as possible, avoids having too big angle between the aluminium binding line, and copper sheet 10 connects and can design more freely under the circumstances of guaranteeing not influencing processing, holistic adaptability, ability strainability are stronger.
In one embodiment, the connection method of the connection structure of the copper sheet 10 is further refined.
In the step of placing the solder layer 30 on the connection surface 201 of the chip 20, the solder layer 30 is fixed on the connection surface 201 of the chip 20 with an adhesive.
Illustratively, such positioning and fixing of the welding layer 30 can ensure that the welding layer 30 does not move or drift, and avoid the occurrence of welding failure. The solder layer 30 may also be fixed on the connection surface 201 of the chip 20 by other fixing methods, which are not further limited herein.
When the connecting mechanism of the copper sheet 10 to be welded is moved to the welding work area and the pre-pressing step is performed on the connecting surface 201 and the welding surface 101, the fixture 70 may be used as long as the pre-pressing of the connecting surface 201 and the welding surface 101 can be achieved, and is not particularly limited.
Further expanding, in an embodiment, a Clip-bonding (oblique bonding) method is adopted for bonding the copper sheet connection structure.
In one embodiment, the copper sheet connection structure is connected by sintering, wherein a sintering paste or a sintering film is placed on the chip or the welding surface of the copper sheet, and then the copper sheet is connected by sintering.
The technical features of the embodiments described above may be arbitrarily combined, and for the sake of brevity, all possible combinations of the technical features in the embodiments described above are not described, but should be considered as being within the scope of the present specification as long as there is no contradiction between the combinations of the technical features.
The above-mentioned embodiments only express several embodiments of the present invention, and the description thereof is more specific and detailed, but not construed as limiting the scope of the invention. It should be noted that, for a person skilled in the art, several variations and modifications can be made without departing from the inventive concept, which falls within the scope of the present invention. Therefore, the protection scope of the present patent shall be subject to the appended claims.
In the description of the present invention, it is to be understood that the terms "central," "longitudinal," "lateral," "length," "width," "thickness," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," "clockwise," "counterclockwise," "axial," "radial," "circumferential," and the like are used in the orientations and positional relationships indicated in the drawings for convenience in describing the invention and to simplify the description, and are not intended to indicate or imply that the referenced device or element must have a particular orientation, be constructed and operated in a particular orientation, and are not to be considered limiting of the invention.
Furthermore, the terms "first", "second" and "first" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include at least one of the feature. In the description of the present invention, "a plurality" means at least two, e.g., two, three, etc., unless specifically limited otherwise.
In the present invention, unless otherwise expressly stated or limited, the terms "mounted," "connected," "secured," and the like are to be construed broadly and can, for example, be fixedly connected, detachably connected, or integrally formed; can be mechanically or electrically connected; they may be directly connected or indirectly connected through intervening media, or they may be connected internally or in any other suitable relationship, unless expressly stated otherwise. The specific meanings of the above terms in the present invention can be understood according to specific situations by those of ordinary skill in the art.
In the present invention, unless otherwise expressly stated or limited, the first feature "on" or "under" the second feature may be directly contacting the first and second features or indirectly contacting the first and second features through an intermediate. Also, a first feature "on," "over," and "above" a second feature may be directly or diagonally above the second feature, or may simply indicate that the first feature is at a higher level than the second feature. A first feature "under," "beneath," and "under" a second feature may be directly under or obliquely under the second feature, or may simply mean that the first feature is at a lesser elevation than the second feature.
It will be understood that when an element is referred to as being "secured to" or "disposed on" another element, it can be directly on the other element or intervening elements may also be present. When an element is referred to as being "connected" to another element, it can be directly connected to the other element or intervening elements may also be present. The terms "vertical," "horizontal," "upper," "lower," "left," "right," and the like as used herein are for illustrative purposes only and do not denote a unique embodiment.
Claims (5)
1. A power module is characterized by comprising a copper sheet, a chip, a welding layer and a ceramic substrate;
the chip is arranged on the ceramic substrate and is provided with a connecting surface for connecting the copper sheet, and the connecting surface is one surface of the chip, which is deviated from the ceramic substrate;
the copper sheet is provided with a welding surface, and the welding surface is arranged corresponding to the connecting surface;
the welding layer is arranged between the connecting surface and the welding surface, and the connecting surface and the welding surface are connected through the welding layer in a welding manner;
the solder layer has a solder material comprising pure silver or a silver alloy; the power module comprises two, three or four chips, a welding surface on the copper sheet is arranged corresponding to the chips, and the two chips are electrically connected through the copper sheet;
the power module further comprises a heat dissipation plate and a shell, and the heat dissipation plate is arranged at the bottom of the ceramic substrate in an attaching mode; the shell is covered outside the ceramic substrate, and the shell is attached to the heat dissipation plate to form a closed cavity for accommodating and mounting the ceramic substrate;
the closed cavity is filled with gel; the copper sheet is provided with at least one structural feature in a hollow manner;
the structural feature allows the gel to pass through.
2. The power module of claim 1, wherein the solder layer comprises a silver film.
3. The power module of claim 1, wherein the copper sheet is set to a thickness of 0.1mm to 1.0mm.
4. The power module of claim 1, wherein the structural feature is a kidney-shaped or circular hole arrangement.
5. A method for connecting a power module, which is applied to the power module according to any one of claims 1 to 4, characterized in that the method for connecting the power module comprises the following steps:
disposing the chip on the ceramic substrate;
placing the welding layer on the connecting surface of the chip, wherein the connecting surface is the surface of the chip, which is far away from the ceramic substrate;
the welding surface of the copper sheet is attached and connected with the connecting surface through the welding layer, so that a copper sheet connecting mechanism to be welded is obtained;
moving the copper sheet connecting mechanism to be welded to a welding working area, and pre-pressing the connecting surface and the welding surface;
and welding the connecting surface to obtain the copper sheet connecting structure.
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| CN202211636301.4A CN115621236B (en) | 2022-12-20 | 2022-12-20 | Copper sheet connecting structure, module and connecting method |
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| JP2008098511A (en) * | 2006-10-13 | 2008-04-24 | Hitachi Metals Ltd | Ceramic circuit board and semiconductor module using the same |
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| US8164176B2 (en) * | 2006-10-20 | 2012-04-24 | Infineon Technologies Ag | Semiconductor module arrangement |
| CN109545773B (en) * | 2018-11-21 | 2020-09-18 | 北京卫星制造厂有限公司 | High-power chip flexible interconnection module and processing method |
| CN110211887A (en) * | 2019-06-11 | 2019-09-06 | 山东海声尼克微电子有限公司 | A kind of lock material hole copper sheet welding procedure for large-current electric source module wire bonding |
| CN113658934A (en) * | 2021-08-23 | 2021-11-16 | 无锡利普思半导体有限公司 | Power module internal connection copper sheet, preparation method thereof and power semiconductor module |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| JP2008098511A (en) * | 2006-10-13 | 2008-04-24 | Hitachi Metals Ltd | Ceramic circuit board and semiconductor module using the same |
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