CN115602564A - Alignment deviation measuring method - Google Patents
Alignment deviation measuring method Download PDFInfo
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- CN115602564A CN115602564A CN202211185276.2A CN202211185276A CN115602564A CN 115602564 A CN115602564 A CN 115602564A CN 202211185276 A CN202211185276 A CN 202211185276A CN 115602564 A CN115602564 A CN 115602564A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B21/00—Measuring arrangements or details thereof, where the measuring technique is not covered by the other groups of this subclass, unspecified or not relevant
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7088—Alignment mark detection, e.g. TTR, TTL, off-axis detection, array detector, video detection
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/544—Marks applied to semiconductor devices or parts, e.g. registration marks, alignment structures, wafer maps
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
- H01L2223/544—Marks applied to semiconductor devices or parts
- H01L2223/54426—Marks applied to semiconductor devices or parts for alignment
Abstract
The application discloses alignment deviation's measuring method includes: providing a substrate; the substrate is sequentially stacked and comprises a third material layer, a second material layer and a first material layer, wherein the first material layer is provided with a first alignment mark, the second material layer is provided with a second alignment mark, and the third material layer is provided with a third alignment mark; measuring the first alignment mark and the second alignment mark to acquire an alignment deviation X12 in the first direction and an alignment deviation Y12 in the second direction between the first alignment mark and the second alignment mark, and measuring the first alignment mark and the third alignment mark to acquire an alignment deviation X13 in the first direction and an alignment deviation Y13 in the second direction between the first alignment mark and the third alignment mark; determining a combined deviation in at least one direction from the deviations X12, X13, Y12, Y13; the comprehensive deviation is used for representing the integral deviation generated in the corresponding direction. The method and the device can accurately measure the deviation in the etching process.
Description
Technical Field
The application relates to the technical field of semiconductors, in particular to a method for measuring alignment deviation.
Background
The overlay process is an important process in semiconductor processes. The overlay mark can be used for identifying an alignment deviation in an overlay process so as to adaptively adjust relevant process parameters according to the alignment deviation in the overlay process; therefore, the overlay mark can provide important guarantee for improving the quality of the overlay process. When the traditional overlay mark rotates, measurement deviation is easy to generate, and the accuracy of finally identified alignment deviation is low.
Disclosure of Invention
In view of this, the present application provides a method for measuring an alignment deviation, so as to solve the problem that when a conventional overlay mark rotates, a measurement deviation is easily generated, and the accuracy of the finally identified alignment deviation is low.
The application also provides a method for measuring the alignment deviation, which comprises the following steps:
providing a substrate; the substrate is sequentially stacked and comprises a third material layer, a second material layer and a first material layer, wherein the first material layer is positioned on the upper surface of the second material layer, the second material layer is positioned on the upper surface of the third material layer, the first material layer is provided with a first alignment mark, the second material layer is provided with a second alignment mark, and the third material layer is provided with a third alignment mark;
measuring the first alignment mark and the second alignment mark to obtain an alignment deviation X12 in a first direction and an alignment deviation Y12 in a second direction between the first alignment mark and the second alignment mark;
measuring the first alignment mark and the third alignment mark to obtain an alignment deviation X13 in a first direction and an alignment deviation Y13 in a second direction between the first alignment mark and the third alignment mark; the first direction is perpendicular to the second direction;
determining a combined deviation in at least one direction from the deviations X12, X13, Y12, Y13; the comprehensive deviation is used for representing the integral deviation generated in the corresponding direction.
Optionally, the combined deviation includes a first combined deviation corresponding to the first direction and a second combined deviation corresponding to the second direction; the method for determining the first composite deviation comprises the following steps: x = Wx 12X 12+ Wx 13X 13; the method of determining the second composite deviation comprises: y = Wy 12Y 12 or Wy 13Y 13; in the formula, wx12 denotes a weight of the misalignment X12, wx13 denotes a weight of the misalignment X13, X denotes a first integrated misalignment, wy12 denotes a weight of the misalignment Y12, wy13 denotes a weight of the misalignment Y13, and Y denotes a second integrated misalignment.
Optionally, the Wx12 and the Wx13 satisfy the following relationship: wx12+ Wx13 is more than or equal to 0 and less than or equal to 1.
Optionally, the Wy12 and the Wy13 satisfy the following relationship: wy12+ Wy13 is more than or equal to 0 and less than or equal to 1.
Alternatively, if X12/X13 is greater than 4 or less than 0.25, wx12=0 or Wx13=0;
if Y12/Y13 is greater than 4 or less than 0.25, wy12=0 or Wy13=0.
Optionally, the alignment deviation X12, the alignment deviation X13, the alignment deviation Y12 and the alignment deviation Y13 form a set of deviations, and each alignment deviation in each set of deviations has a corresponding weight.
Optionally, the sets of deviations include the following deviations: offset, rotation, orthogonality, magnification, lithographic error within an exposure area, or lithographic error between exposure areas.
Optionally, the distance between the third alignment mark and the first alignment mark is used to measure the alignment deviation between the third material layer and the first material layer, and the distance between the second alignment mark and the first alignment mark is used to measure the alignment deviation between the second material layer and the first material layer.
Optionally, the distance between the third alignment mark and the first alignment mark comprises the distance from a reference object in the third alignment mark to the corresponding reference object of the reference object in the first alignment mark.
Optionally, the distance between the second alignment mark and the first alignment mark comprises a distance from a reference object in the second alignment mark to the corresponding reference object of the reference object in the first alignment mark.
Optionally, the center of the reference object is defined by a straight line defined by the center of the alignment mark where the reference object is located and the center of the first alignment mark.
According to the method for measuring the alignment deviation, the alignment marks on the material layers sequentially stacked on the substrate are in the centrosymmetric structure such as the circular structure, so that even if the material layers and/or the alignment marks rotate or the like, the relative positions of the alignment marks on any two material layers cannot change, the alignment deviation obtained according to the measurement of the alignment marks on the two material layers can be kept stable before and after the material layers and/or the alignment marks rotate, the measurement deviation cannot be generated, and the obtained alignment deviation has high accuracy; in addition, the measuring method obtains the alignment deviation X12 in the first direction and the alignment deviation Y12 in the second direction between a plurality of groups of first alignment marks and second alignment marks by measuring the first alignment marks and the second alignment marks, obtains the alignment deviation X13 in the first direction and the alignment deviation Y13 in the second direction between the first alignment marks M1 and the third alignment marks M3 by measuring the first alignment marks M1 and the third alignment marks M3, and determines the comprehensive deviation in at least one direction according to the deviations X12, X13, Y12 and Y13, so that the determination process of the comprehensive deviation covers a plurality of deviations in a plurality of directions, and has higher accuracy.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings needed to be used in the description of the embodiments are briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments of the present application, and it is obvious for those skilled in the art to obtain other drawings based on these drawings without creative efforts.
FIG. 1 is a schematic view of layers of material with overlay marks according to an embodiment of the present disclosure;
FIG. 2 is a top view of an overlay mark according to an embodiment of the present application;
FIG. 3a, FIG. 3b and FIG. 3c are schematic diagrams illustrating the relative structure of the overlay mark in an embodiment of the present application;
FIG. 4 is a diagram illustrating a structure of an overlay mark according to an embodiment of the present disclosure;
FIG. 5a, FIG. 5b, FIG. 5c, FIG. 5d and FIG. 5e are schematic diagrams of the related structures of the overlay mark in an embodiment of the present application;
fig. 6 is a flowchart illustrating a method for measuring an alignment deviation according to an embodiment of the present disclosure.
Detailed Description
The technical solutions in the embodiments of the present application are clearly and completely described below with reference to the accompanying drawings, and it is obvious that the described embodiments are only a part of the embodiments of the present application, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application. The embodiments described below and their technical features may be combined with each other without conflict.
The present application provides an overlay mark, as shown in fig. 1 and fig. 2, the overlay mark includes alignment marks respectively disposed on a plurality of material layers, for example, as shown in fig. 1, the overlay mark includes a third material layer L1, a second material layer L2, … …, an n-1 material layer Ln-1, and an n material layer Ln, which are n material layers in total, fig. 2 shows an alignment mark corresponding to each material layer, for example, the alignment mark may include a first alignment mark M1 corresponding to the third material layer L1, a second alignment mark M2, … … corresponding to the second material layer L2, an n-1 alignment mark Mn-1 corresponding to the n-1 material layer Ln-1, and an n alignment mark Mn corresponding to the n material layer Ln. It should be noted that fig. 1, fig. 2 and the respective drawings provided later in this application only illustrate the corresponding structures roughly, not all components of the overlay marks are fully shown, nor related components are shown in equal proportion.
In the alignment marks, at least one material layer is in a circular structure, and the alignment marks arranged on any two material layers are used for measuring alignment deviation between the two material layers so as to adjust the etching position in real time according to the alignment deviation and ensure the accuracy of the etching process.
Optionally, the alignment marks on the material layers are in a circular structure, so that when the material layers and/or the alignment marks rotate, the relative positions of the alignment marks on any two material layers do not change, alignment deviation obtained by measurement of the alignment marks on the two material layers can be kept stable before and after the material layers and/or the alignment marks rotate, and the accuracy is higher. Optionally, the centers of the circular structures are on the same straight line, or the projections of the centers of the circular structures on the horizontal plane are on the same straight line.
Wherein the alignment marks on at least one material layer are in a circular structure, in one example, as shown in fig. 1 and 3a, each alignment mark of the overlay marks may be in a circular structure. In another example, referring to fig. 3b, the alignment mark of the overlay mark may also be a circular structure such as a cylinder structure, and fig. 3b only shows the third material layer L1 and the corresponding first alignment mark M1, the second material layer L2 and the corresponding second alignment mark M2. In another example, as shown in fig. 3c, a part of the alignment mark of the overlay mark may have a cylindrical structure, and a part of the alignment mark may have a square shape or other structure with a central symmetry feature. Because each alignment mark is in a round structure or a square structure or other structures with central symmetry characteristics, even if the material layers and/or the alignment marks rotate and the like, the relative positions of the alignment marks on any two material layers cannot change, the alignment deviation obtained by measuring the alignment marks on the two material layers can be kept stable before and after the material layers and/or the alignment marks rotate, and the accuracy is higher.
Alternatively, the nth material layer Ln may include a silicon substrate, and may also include a conductive layer, an insulating layer, or other structures. The third material layer L1 to the n-1 th material layer Ln-1 may respectively include a semiconductor layer (e.g., a polysilicon layer) and the like. The first alignment mark M1, the second alignment mark M2, … …, the n-1 alignment mark Mn-1, the n-th alignment mark Mn, and the like may include a groove structure recessed in the corresponding material layer, or a post structure protruding from the corresponding material layer to provide a reference mark for the corresponding material layer. Alternatively, the alignment mark may be formed in a circular pattern using a positive photoresist or a negative photoresist. Alternatively, the first to n-1 th alignment marks M1 to Mn-1 may respectively include a groove structure recessed in the corresponding material layer, and the groove structure may be formed using a photolithography process; the nth alignment mark Mn may include a cylindrical photoresist pattern protruding from the nth material layer Ln.
Specifically, the alignment deviation between the nth material layer Ln and the n-1 th material layer Ln-1 may be characterized by the deviation between the respective centers of the nth alignment mark Mn and the n-1 th alignment mark Mn-1. For example, referring to FIG. 4, if the nth alignment mark Mn and the nth-1 alignment mark are both circular structures, the deviation between the center On of the nth alignment mark Mn and the center On-1 of the nth-1 alignment mark can be used to characterize the alignment deviation between the nth material layer Ln and the nth-1 material layer Ln-1.
Alternatively, the number of layers n in the overlay mark may be set according to the overlay requirement, for example, the number of layers n may be set to 3 or 4, and so on.
In an embodiment, the number n of the layers is 3, and the plurality of material layers includes a third material layer L1, a second material layer L2 and a first material layer L3, as shown in fig. 5a, the first material layer L1 is located on the surface of the second material layer L2, and the second material layer L2 is located on the surface of the third material layer L3.
The first material layer L1 is provided with a first alignment mark M1, the second material layer L2 is provided with a second alignment mark M2, and the third material layer L3 is provided with a third alignment mark M3. The distance (e.g., distances d31 and d31 ') between the third alignment mark M3 and the first alignment mark M1 is used to measure the alignment deviation between the third material layer L3 and the first material layer L1, specifically, the alignment deviation between the third material layer L3 and the first material layer L1 includes the difference between two different distances therebetween, for example, the alignment deviation may include d31-d31'. The distance (e.g., distances d21 and d21 ') between the second alignment mark M2 and the first alignment mark M1 is used to measure the alignment deviation between the second material layer L2 and the first material layer L1, specifically, the alignment deviation between the second material layer L2 and the first material layer L1 includes the difference between two different distances therebetween, for example, the alignment deviation may include d21-d21'.
Optionally, the distance between the third alignment mark M3 and the first alignment mark M1 includes a distance from one reference object in the third alignment mark M3 to the corresponding reference object in the first alignment mark, for example, as shown in fig. 5b, one reference object in the third alignment mark M3 is M3 (1), the corresponding reference object in the first alignment mark M3 (1) is M1 (1), and the distance between the third alignment mark M3 and the first alignment mark M1 includes a distance between M3 (1) and M1 (1).
Optionally, the distance between the second alignment mark M2 and the first alignment mark M1 includes a distance from a reference object in the second alignment mark M2 to a corresponding reference object of the reference object in the first alignment mark M1, for example, as shown in fig. 5b, a reference object in the second alignment mark M2 is M2 (1), a corresponding reference object of M2 (1) in the first alignment mark is M1 (1), and a distance between the second alignment mark M2 and the first alignment mark M1 includes a distance between M2 (1) and M1 (1).
Optionally, the center of the reference object, the center of the alignment mark where the reference object is located, and the center of the alignment mark where the corresponding reference object is located are on the same straight line, so that the distance between the reference object and the corresponding reference object can more accurately represent the distance between the corresponding material layers, and along with the rotation between the material layers, the relative position between the reference object and the corresponding reference object where the center of the circle is on the same straight line can be kept stable, which is beneficial to improving the accuracy of the obtained alignment deviation. Alternatively, if the reference object includes a specified point, the specified point is on the same straight line with the center of the alignment mark where the specified point is located. Optionally, if the reference object includes a designated circle, the center of the designated circle and the center of the alignment mark where the designated circle is located are on the same straight line.
Alternatively, the projections of the centers of the first, second and third alignment marks M1, M2 and M3 on the horizontal plane are on the same straight line, for example, referring to fig. 5c, the center O1 of the first alignment mark M1, the center O2 of the second alignment mark M2 and the center O3 of the third alignment mark M3 are on the same straight line in the top view, and the schematic diagram when the alignment deviation is 0 may refer to fig. 5 b. Referring to fig. 5c, the correlation distances may be referred to as fig. 5d, and the straight line of each distance passes through the center of the corresponding alignment mark to ensure the accuracy of the determined distance. Specifically, fig. 5d shows two distances d21 and d21 'between the second alignment mark M2 and the first alignment mark M1, when the alignment deviation between the second alignment mark M2 and the first alignment mark M1 includes d21-d21'.
Alternatively, the projections of the centers of the first, second and third alignment marks M1, M2 and M3 on the horizontal plane may not be on the same straight line, for example, as shown in fig. 5e, where fig. 5e only shows the center O1 of the first alignment mark M1 and does not show the first alignment mark M1, and in this figure, the center O1 of the first alignment mark M1, the center O2 of the second alignment mark M2 and the center O3 of the third alignment mark M3 are not on the same straight line. At this time, the alignment deviation between any two material layers can be accurately measured according to the alignment marks respectively arranged on the two material layers.
Optionally, the third alignment mark, the second alignment mark and the first alignment mark each comprise a plurality of arc-shaped segments on corresponding circular structures to improve flexibility in the characterization and formation of each alignment mark.
Further, the reference object includes a center point of the corresponding arc segment, so that the reference object can more accurately represent the corresponding arc segment. The corresponding reference object of the reference object includes a center point of the arc segment corresponding to the arc segment in which the reference object is located so that the distance between the reference object and its corresponding reference object can more accurately characterize the distance between the corresponding alignment marks.
In one example, the first material layer L1 is aligned with the second material layer L2 and the third material layer L2, respectively; that is, the first alignment mark M1 of the first material layer L1 is aligned with the second alignment mark M2 of the second material layer L2, the first alignment mark M1 of the first material layer L1 is aligned with the third alignment mark M3 of the third material layer L3, and a reference object on the first alignment mark M1 is aligned with the reference objects on the second alignment mark M2 and the third alignment mark M3, respectively; specifically, if the reference object comprises a circle arranged in the alignment mark, the centers of circles which can represent a group of corresponding representation reference objects are aligned on the same straight line; optionally, the straight line passes through the center of the overlay mark.
The first material layer and the second material layer have a first offset therebetween, and the first material layer and the third material layer have a second offset therebetween. The first deviation may be indicative of the first material layer deviating from the second material layer by at least one of: offset, rotation, orthogonality, magnification, lithographic error within an exposure area (or between exposure areas). The second deviation may be indicative of at least one of the following deviations of the first material layer from the third material layer: offset, rotation, orthogonality, magnification, lithographic error within an exposure area (or between exposure areas).
In the alignment marks, the alignment marks on at least one material layer are in a circular structure, so that even if the material layers and/or the alignment marks rotate and the like, the relative positions between the alignment marks on any two material layers cannot change, the alignment deviation obtained by measuring according to the alignment marks on the two material layers can be kept stable before and after the material layers and/or the alignment marks rotate, the measurement deviation cannot be generated, the obtained alignment deviation has higher accuracy, the deviation in the etching process is calibrated, and the accuracy of the corresponding etching process is improved.
The present application further provides a method for measuring an alignment deviation, which can use the overlay mark measurement provided in any of the above embodiments. Referring to fig. 6, the method of measuring the alignment deviation includes the following steps S110 to S140.
S110, providing a substrate; referring to fig. 5a to 5b, a third material layer L3, a second material layer L2 and a first material layer L1 are sequentially stacked on the substrate, the first material layer L1 is located on an upper surface of the second material layer L2, the second material layer L2 is located on an upper surface of the third material layer L3, a first alignment mark M1 is disposed on the first material layer L1, a second alignment mark M2 is disposed on the second material layer L2, and a third alignment mark M3 is disposed on the third material layer L3.
S120, measuring the first alignment mark M1 and the second alignment mark M2 to obtain an alignment deviation X12 in a first direction and an alignment deviation Y12 in a second direction between the first alignment mark M1 and the second alignment mark M2. Here, the measurement may be performed on the sets of reference objects of the first alignment mark M1 and the second alignment mark M2 to obtain the alignment deviation X12 and the alignment deviation Y12, respectively; for example, a set of reference objects in a first direction may be measured to obtain the alignment deviation X12, and for example, a set of reference objects in a second direction may be measured to obtain the alignment deviation Y12.
S130, measuring a first alignment mark M1 and a third alignment mark M3 to obtain an alignment deviation X13 in a first direction and an alignment deviation Y13 in a second direction between the first alignment mark M1 and the third alignment mark M3; the first direction is perpendicular to the second direction; here, the measurement may be performed on the sets of reference objects of the first alignment mark M1 and the third alignment mark M3 to obtain the alignment deviation X13 and the alignment deviation Y13, respectively; for example, a set of reference objects in a first direction may be measured to obtain the alignment deviation X13, and for example, a set of reference objects in a second direction may be measured to obtain the alignment deviation Y13.
S140, determining a comprehensive deviation in at least one direction according to the deviations X12, X13, Y12 and Y13; and the comprehensive deviation is used for representing the integral deviation generated in the corresponding direction.
The alignment deviation measuring method adopts the overlay mark measurement provided by any embodiment, and the measuring process has higher reliability; the alignment deviation X12 in the first direction and the alignment deviation Y12 in the second direction between the first alignment mark M1 and the second alignment mark M2 are obtained by measuring a plurality of sets of the first alignment mark M1 and the second alignment mark M2, the alignment deviation X13 in the first direction and the alignment deviation Y13 in the second direction between the first alignment mark M1 and the third alignment mark M3 are obtained by measuring the first alignment mark M1 and the third alignment mark M3, and the comprehensive deviation in at least one direction is determined according to the deviations X12, X13, Y12 and Y13, so that the determination process of the comprehensive deviation covers a plurality of types of deviations in a plurality of directions, and has higher accuracy.
In one embodiment, the combined deviation comprises a first combined deviation corresponding to the first direction and a second combined deviation corresponding to the second direction; the method of determining the first composite deviation comprises: x = Wx 12X 12+ Wx 13X 13; the method of determining the second composite deviation comprises: y = Wy 12Y 12 or Wy 13Y 13; in the formula, wx12 denotes a weight of the misalignment X12, wx13 denotes a weight of the misalignment X13, X denotes a first integrated misalignment, wy12 denotes a weight of the misalignment Y12, wy13 denotes a weight of the misalignment Y13, and Y denotes a second integrated misalignment. The embodiment can accurately calculate the comprehensive deviation of all directions.
Optionally, the Wx12 and the Wx13 satisfy the following relationship: wx12+ Wx13 is more than or equal to 0 and less than or equal to 1. Wx12 and Wx13 are determined here with greater accuracy.
Optionally, the Wy12 and the Wy13 satisfy the following relationship: wy12+ Wy13 is more than or equal to 0 and less than or equal to 1. Wy12 and Wy13 are determined here with greater accuracy.
Alternatively, if X12/X13 is greater than 4 or less than 0.25, wx12=0 or Wx13=0; specifically, if the deviation ratio of X12/X13 is greater than 4,wx13=0; if the deviation ratio of X12/X13 is less than 0.25, wx12=0.
Alternatively, wy12=0 or Wy13=0 if Y12/Y13 is greater than 4 or less than 0.25. Specifically, if the deviation ratio of Y12/Y13 is greater than 4,wy13=0; if the deviation ratio Y12/Y13 is less than 0.25, wy12=0.
Alternatively, the alignment deviation X12, the alignment deviation X13, the alignment deviation Y12 and the alignment deviation Y13 may form a set of deviations, and each alignment deviation in each set of deviations has a corresponding weight.
Optionally, the sets of deviations include the following deviations: offset, rotation, orthogonality, magnification, lithographic error within an exposure area (or between exposure areas).
In one embodiment, the distance between the third alignment mark and the first alignment mark is used to measure the alignment deviation between the third material layer and the first material layer, and the distance between the second alignment mark and the first alignment mark is used to measure the alignment deviation between the second material layer and the first material layer.
In one embodiment, the distance between the third alignment mark and the first alignment mark comprises the distance from a reference object in the third alignment mark to the corresponding reference object in the first alignment mark.
In one embodiment, the distance between the second alignment mark and the first alignment mark comprises the distance from a reference object in the second alignment mark to the corresponding reference object in the first alignment mark.
Optionally, the center of the reference object is defined by a straight line defined by the center of the alignment mark where the reference object is located and the center of the first alignment mark.
The alignment deviation measurement method described above, which uses the overlay mark measurement provided in any of the above embodiments, has all the beneficial effects of the overlay mark provided in any of the above embodiments, and is not described herein again. In addition, the measuring method obtains the alignment deviation X12 in the first direction and the alignment deviation Y12 in the second direction between the first alignment mark M1 and the second alignment mark M2 by measuring a plurality of sets of the first alignment mark M1 and the second alignment mark M2, obtains the alignment deviation X13 in the first direction and the alignment deviation Y13 in the second direction between the first alignment mark M1 and the third alignment mark M3 by measuring the first alignment mark M1 and the third alignment mark M3, and determines the comprehensive deviation in at least one direction according to the deviations X12, X13, Y12 and Y13, so that the determination process of the comprehensive deviation covers a plurality of types of deviations in a plurality of directions, and has higher accuracy.
Although the application has been shown and described with respect to one or more implementations, equivalent alterations and modifications will occur to others skilled in the art based upon a reading and understanding of this specification and the annexed drawings. This application is intended to embrace all such modifications and variations and is limited only by the scope of the appended claims. In particular regard to the various functions performed by the above described components, the terms used to describe such components are intended to correspond, unless otherwise indicated, to any component which performs the specified function of the described component (e.g., that is functionally equivalent), even though not structurally equivalent to the disclosed structure which performs the function in the herein illustrated exemplary implementations of the specification.
That is, the above description is only an embodiment of the present application, and not intended to limit the scope of the present application, and all equivalent structures or equivalent flow transformations made by using the contents of the specification and the drawings, such as mutual combination of technical features between various embodiments, or direct or indirect application to other related technical fields, are included in the scope of the present application.
In addition, in the description of the present application, it is to be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", and the like indicate orientations or positional relationships based on those shown in the drawings, and are only for convenience of description and simplicity of description, and do not indicate or imply that the device or element being referred to must have a particular orientation, be constructed in a particular orientation, and be operated, and thus, should not be considered as limiting the present application. In addition, the present application may be identified by the same or different reference numerals for structural elements having the same or similar characteristics. Furthermore, the terms "first", "second" and "first" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more features. In the description of the present application, "a plurality" means two or more unless specifically limited otherwise.
In this application, the word "exemplary" is used to mean "serving as an example, instance, or illustration. Any embodiment described herein as "exemplary" is not necessarily to be construed as preferred or advantageous over other embodiments. The previous description is provided to enable any person skilled in the art to make and use the present application. In the foregoing description, various details have been set forth for the purpose of explanation. It will be apparent to one of ordinary skill in the art that the present application may be practiced without these specific details. In other instances, well-known structures and processes are not shown in detail to avoid obscuring the description of the present application with unnecessary detail. Thus, the present application is not intended to be limited to the embodiments shown, but is to be accorded the widest scope consistent with the principles and features disclosed herein.
Claims (10)
1. A method of measuring misalignment, comprising the steps of:
providing a substrate; the substrate is sequentially stacked and comprises a third material layer, a second material layer and a first material layer, the first material layer is positioned on the upper surface of the second material layer, the second material layer is positioned on the upper surface of the third material layer, a first alignment mark is arranged on the first material layer, a second alignment mark is arranged on the second material layer, and a third alignment mark is arranged on the third material layer;
measuring the first alignment mark and the second alignment mark to obtain an alignment deviation X12 in a first direction and an alignment deviation Y12 in a second direction between the first alignment mark and the second alignment mark;
measuring the first alignment mark and the third alignment mark to obtain an alignment deviation X13 in a first direction and an alignment deviation Y13 in a second direction between the first alignment mark and the third alignment mark; the first direction is perpendicular to the second direction;
determining a combined deviation in at least one direction from the deviations X12, X13, Y12, Y13; the comprehensive deviation is used for representing the integral deviation generated in the corresponding direction.
2. The method of claim 1, wherein the composite deviation comprises a first composite deviation corresponding to a first direction and a second composite deviation corresponding to a second direction;
the method of determining the first composite deviation comprises: x = Wx 12X 12+ Wx 13X 13;
the method of determining the second composite deviation comprises: y = Wy 12Y 12 or Wy 13Y 13;
in the formula, wx12 denotes a weight of the misalignment X12, wx13 denotes a weight of the misalignment X13, X denotes a first integrated misalignment, wy12 denotes a weight of the misalignment Y12, wy13 denotes a weight of the misalignment Y13, and Y denotes a second integrated misalignment.
3. The alignment deviation measuring method according to claim 2, wherein the Wx12 and the Wx13 satisfy the following relationship: wx12+ Wx13 is more than or equal to 0 and less than or equal to 1.
4. The alignment deviation measuring method according to claim 2, wherein Wy12 and Wy13 satisfy the following relationship: wy12+ Wy13 is more than or equal to 0 and less than or equal to 1.
5. The method of measuring an alignment deviation according to claim 2, wherein Wx12=0 or Wx13=0 if X12/X13 is greater than 4 or less than 0.25;
if Y12/Y13 is greater than 4 or less than 0.25, wy12=0 or Wy13=0.
6. The method of claim 2, wherein the alignment deviation X12, the alignment deviation X13, the alignment deviation Y12 and the alignment deviation Y13 form a set of deviations, each alignment deviation in each set of deviations having a corresponding weight;
the sets of deviations include the following deviations: offset, rotation, orthogonality, magnification, lithographic error within an exposure area, or lithographic error between exposure areas.
7. The method according to claim 1, wherein a distance between the third alignment mark and the first alignment mark is used to measure an alignment deviation between the third material layer and the first material layer, and a distance between the second alignment mark and the first alignment mark is used to measure an alignment deviation between the second material layer and the first material layer.
8. The method of claim 1, wherein the distance between the third alignment mark and the first alignment mark comprises a distance from a reference object in the third alignment mark to the corresponding reference object in the first alignment mark.
9. The method of claim 1, wherein the distance between the second alignment mark and the first alignment mark comprises a distance from a reference object in the second alignment mark to a corresponding reference object in the first alignment mark.
10. The method of claim 8 or 9, wherein the center of the reference object is defined by a straight line defined by the center of the alignment mark where the reference object is located and the center of the first alignment mark.
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| CN202211185276.2A CN115602564A (en) | 2022-09-27 | 2022-09-27 | Alignment deviation measuring method |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116755300A (en) * | 2023-08-21 | 2023-09-15 | 合肥晶合集成电路股份有限公司 | Overlay error measurement method, device and photoetching system |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116755300A (en) * | 2023-08-21 | 2023-09-15 | 合肥晶合集成电路股份有限公司 | Overlay error measurement method, device and photoetching system |
| CN116755300B (en) * | 2023-08-21 | 2023-11-14 | 合肥晶合集成电路股份有限公司 | Overlay error measurement method, device and photoetching system |
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