CN111580351B - Overlay alignment mark structure and related method and device - Google Patents
Overlay alignment mark structure and related method and device Download PDFInfo
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- CN111580351B CN111580351B CN202010472791.3A CN202010472791A CN111580351B CN 111580351 B CN111580351 B CN 111580351B CN 202010472791 A CN202010472791 A CN 202010472791A CN 111580351 B CN111580351 B CN 111580351B
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70616—Monitoring the printed patterns
- G03F7/70633—Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/544—Marks applied to semiconductor devices or parts, e.g. registration marks, alignment structures, wafer maps
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
- H01L2223/544—Marks applied to semiconductor devices or parts
- H01L2223/54426—Marks applied to semiconductor devices or parts for alignment
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
The invention provides an overlay alignment mark structure and a manufacturing method thereof, an overlay accuracy measuring method and a semiconductor device, comprising a substrate; a physical reference mark located on one side surface of the substrate; the thin film covering layer covers one side, away from the substrate, of the entity reference mark, the side, away from the substrate, of the thin film covering layer comprises a groove measurement mark, and the entity reference mark and the groove measurement mark are combined to form an alignment mark for alignment; the groove measuring mark and the solid reference mark are provided with at least one overlapping area, and at least one side edge of the solid reference mark is exposed at the overlapping area. Because at least one overlapping area is arranged between the groove measuring mark and the entity reference mark, and at least one side edge of the entity reference mark is exposed in the overlapping area, the clear and accurate appearances of the entity reference mark and the groove measuring mark at the overlapping area are obtained through the CDSEM measuring machine, and then the alignment precision is measured on the clear and accurate appearances, so that the small measurement error of the alignment precision can be ensured.
Description
Technical Field
The invention relates to the technical field of semiconductor devices, in particular to an alignment mark structure for overlay, a manufacturing method thereof, an overlay precision measuring method and a semiconductor device.
Background
With the continuous reduction of the photoetching characteristic dimension, the requirements on the alignment precision and the critical dimension uniformity of a photoetching machine are also continuously improved. The manufacture of semiconductor devices usually includes several tens of photolithography steps, and in order to ensure the correspondence of the respective levels, it is necessary to require an overlay accuracy matching the photolithography feature size. The difference between the exposure pattern and the actual position, i.e. the pattern position offset, is an important factor affecting the alignment precision of the lithography machine and also an important factor affecting the device. In the manufacturing process of the existing semiconductor device, the measurement error of the alignment precision is larger.
Disclosure of Invention
In view of this, the present invention provides an overlay alignment mark structure, a method for manufacturing the same, an overlay accuracy measurement method, and a semiconductor device, which effectively solve the technical problems in the prior art and ensure that the measurement error of the overlay accuracy is small.
In order to achieve the purpose, the technical scheme provided by the invention is as follows:
an overlay alignment mark structure comprising:
a substrate;
a physical reference mark located on one side surface of the substrate;
and a film cover layer covering one side of the entity reference mark, which is far away from the substrate, wherein one side of the film cover layer, which is far away from the substrate, comprises a groove measurement mark, and the entity reference mark and the groove measurement mark are combined into an overlay alignment mark; the groove measuring mark and the solid reference mark are provided with at least one overlapping area, and at least one side edge of the solid reference mark is exposed at the overlapping area.
Optionally, the overlay alignment mark includes:
the four alignment areas are arranged in an array of two rows and two columns, each alignment area comprises a plurality of first extension parts arranged in parallel and a plurality of second extension parts arranged in parallel, the extension directions of the first extension parts and the second extension parts are the same, the first extension parts and the second extension parts are arranged in a one-to-one correspondence manner in the extension directions, and an overlapping area is arranged between the end part of at least one first extension part and the end part of the second extension part opposite to the end part of the first extension part;
in the row direction and the column direction of the two rows and two columns of arrays, the extending directions of the respective corresponding extending parts of the two adjacent alignment areas are perpendicular, wherein the first extending parts of all the alignment areas constitute the entity reference mark, and the second extending parts of all the alignment areas constitute the groove measuring mark.
Optionally, at an overlapping area of an end of the first extending portion and an end of the second extending portion, and perpendicular to the extending direction, a width of the end of the second extending portion is greater than a width of the end of the first extending portion, and a side edge of the end of the first extending portion in the extending direction and perpendicular to the extending direction is exposed at the overlapping area.
Optionally, the second extension part having an overlapping region with the first extension part includes: a strip-shaped extension portion and an auxiliary extension portion;
in the direction perpendicular to the extending direction, the width of the auxiliary extending portion is greater than the width of the strip-shaped extending portion, and the auxiliary extending portion is located at an overlapping area of the first extending portion and the second extending portion.
Optionally, the first extension portion and the second extension portion that does not have an overlapping region with the first extension portion are both strip-shaped extension portions.
Correspondingly, the invention also provides a manufacturing method of the overlay alignment mark structure, which comprises the following steps:
providing a substrate;
forming a solid reference mark on one side surface of the substrate;
forming a thin film cover layer covering one side of the entity reference mark, which faces away from the substrate;
etching one side of the film covering layer, which is far away from the substrate, to form a groove measurement mark, wherein the entity reference mark and the groove measurement mark are combined to form an alignment mark; the groove measuring mark and the solid reference mark are provided with at least one overlapping area, and at least one side edge of the solid reference mark is exposed at the overlapping area.
Correspondingly, the invention also provides an overlay accuracy measuring method, which is applied to the overlay alignment mark structure and comprises the following steps:
acquiring the appearances of the solid reference mark and the groove measuring mark at the overlapping region by using a CDSEM (Critical Dimension-Scanning Electron Microscope) measuring machine;
calculating deviation data between the side edge of the physical reference mark exposed in the overlapping area and the preset side edge of the groove measurement mark to determine the overlay accuracy.
Optionally, before the CDSEM measuring machine is used to obtain the features of the solid reference mark and the groove measurement mark at the overlapping region, the method further includes:
judging whether the alignment mark structure can adopt an IBO (image base overlay, an alignment measurement technology based on imaging and image recognition) measurement mode to determine the alignment precision, and if not, adopting a CDSEM (compact disc scanning microscope) measuring machine to obtain the appearances of the entity reference mark and the groove measurement mark at the overlapping area.
Correspondingly, the invention also provides a semiconductor device which comprises the overlay alignment mark structure.
Compared with the prior art, the technical scheme provided by the invention at least has the following advantages:
the invention provides an overlay alignment mark structure and a manufacturing method thereof, an overlay precision measuring method and a semiconductor device, comprising the following steps: a substrate; a physical reference mark located on one side surface of the substrate; and a film cover layer covering one side of the entity reference mark, which is far away from the substrate, wherein one side of the film cover layer, which is far away from the substrate, comprises a groove measurement mark, and the entity reference mark and the groove measurement mark are combined into an overlay alignment mark; the groove measuring mark and the solid reference mark are provided with at least one overlapping area, and at least one side edge of the solid reference mark is exposed at the overlapping area.
As can be seen from the above, in the technical scheme provided by the present invention, since at least one overlapping area is formed between the groove measurement mark and the entity reference mark, and at least one side edge of the entity reference mark is exposed in the overlapping area, the clearer and more accurate appearances of the entity reference mark and the groove measurement mark in the overlapping area can be obtained by the CDSEM measurement machine, so as to measure the alignment precision of the clearer and more accurate appearances, and thus, the measurement error of the alignment precision can be ensured to be small.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the provided drawings without creative efforts.
Fig. 1 is a schematic structural diagram of an overlay alignment mark structure according to an embodiment of the present invention;
FIG. 2 is a cross-sectional view taken along the direction AA' in FIG. 1;
FIG. 3 is a cut-away view in the direction of BB' in FIG. 1;
fig. 4 is a flowchart of an overlay accuracy measurement method according to an embodiment of the present invention;
FIG. 5 is a flowchart of another overlay accuracy measurement method according to an embodiment of the present invention;
fig. 6 is a flowchart of a method for fabricating an overlay alignment mark structure according to an embodiment of the present invention.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
As discussed in the background, as lithographic feature sizes continue to decrease, the need for lithography machine overlay accuracy and critical dimension uniformity continues to increase. The manufacture of semiconductor devices usually includes several tens of photolithography steps, and in order to ensure the correspondence of the respective levels, it is necessary to require an overlay accuracy matching the photolithography feature size. The difference between the exposure pattern and the actual position, i.e. the pattern position offset, is an important factor affecting the alignment precision of the lithography machine and also an important factor affecting the device. In the manufacturing process of the existing semiconductor device, the measurement error of the alignment precision is larger.
Based on the alignment mark structure, the alignment mark structure manufacturing method, the alignment precision measuring method and the semiconductor device, the technical problems in the prior art are effectively solved, and the small measurement error of the alignment precision is guaranteed.
In order to achieve the above object, the technical solutions provided by the present invention are described in detail below, specifically with reference to fig. 1 to 6.
Referring to fig. 1 to fig. 3, fig. 1 is a schematic structural diagram of an alignment mark structure for overlay according to an embodiment of the present invention, fig. 2 is a sectional view along AA 'in fig. 1, and fig. 3 is a sectional view along BB' in fig. 1, wherein the alignment mark structure for overlay includes:
a substrate 100;
a physical reference mark 200 on one side surface of the substrate 100;
and a thin film cover layer 300 covering a side of the physical reference mark 200 facing away from the substrate 100, the side of the thin film cover layer 300 facing away from the substrate including a groove measurement mark 400, the physical reference mark 200 and the groove measurement mark 400 being combined as an overlay alignment mark; there is at least one overlap region between the groove measurement mark 400 and the physical reference mark 200, and at least one side edge of the physical reference mark 200 is exposed at the overlap region.
Referring to fig. 4, a flowchart of an overlay accuracy measuring method according to an embodiment of the present invention is shown, where the overlay accuracy measuring method is applied to the overlay alignment mark structure provided in the foregoing embodiment, and includes:
s1, acquiring the appearances of the entity reference mark and the groove measuring mark at the overlapping area by adopting a CDSEM measuring machine;
and S2, calculating deviation data between the side edge of the physical reference mark exposed in the overlapping area and the preset side edge of the groove measuring mark to determine the overlay accuracy.
It can be understood that, in the overlapping region of the entity reference mark and the groove measurement mark provided in the embodiment of the present invention, a preset parameter data is provided between a side of the entity reference mark exposed and a preset side of the groove measurement mark, and the overlay accuracy is determined according to a variation range of the parameter data. As shown in fig. 3, at the overlapping area of the physical reference mark 200 and the groove measurement mark 400, a set distance a1 is provided between the exposed side of the physical reference mark 200 and the opposite side of the groove measurement mark 400, and further, by measuring the deviation of the set distance a1, the deviation between the physical reference mark 200 and the groove measurement mark 400 can be obtained, so as to finally determine the overlay accuracy of the overlay alignment mark structure.
As can be seen from the above, in the technical scheme provided by the present invention, since at least one overlapping area is formed between the groove measurement mark and the entity reference mark, and at least one side edge of the entity reference mark is exposed in the overlapping area, the clearer and more accurate appearances of the entity reference mark and the groove measurement mark in the overlapping area can be obtained by the CDSEM measurement machine, so as to measure the alignment precision of the clearer and more accurate appearances, and thus, the measurement error of the alignment precision can be ensured to be small.
Further, because the method for measuring the overlay accuracy by using the CDSEM measuring machine is complicated, the method of measuring the overlay accuracy by using the IBO measurement method may further include, before measuring the overlay accuracy by using the CDSEM measuring machine, the step of measuring the overlay accuracy by using the CDSEM measuring machine, that is, before obtaining the features of the entity reference mark and the groove measurement mark at the overlapping region by using the CDSEM measuring machine, further including:
judging whether the alignment mark structure can adopt an IBO measurement mode to determine the alignment precision, if not, adopting a CDSEM measurement machine to obtain the appearance of the entity reference mark and the groove measurement mark at the overlapping area; if yes, determining the alignment precision by adopting an IBO measurement mode.
Specifically referring to fig. 5, a flowchart of another alignment precision measuring method provided in an embodiment of the present invention is shown, where the alignment precision measuring method includes:
s1', judging whether the alignment mark structure can adopt IBO measurement mode to determine the alignment precision, if not, entering the step S1; if so, determining the alignment precision by adopting an IBO measurement mode;
s1, acquiring the appearances of the entity reference mark and the groove measuring mark at the overlapping area by adopting a CDSEM measuring machine;
and S2, calculating deviation data between the side edge of the physical reference mark exposed in the overlapping area and the preset side edge of the groove measuring mark to determine the overlay accuracy.
It can be understood that, according to the technical scheme provided by the embodiment of the invention, before determining whether the alignment precision is determined by using the CDSEM measurement mode, whether the alignment precision can be determined by using the more convenient IBO measurement mode is firstly verified, so that the measurement of the alignment precision is facilitated and the measurement efficiency of the alignment precision can be improved. When the alignment mark is damaged and the alignment precision cannot be determined by adopting the IBO measuring mode, the CDSEM measuring mode is further selected to determine the alignment precision, so that the finally measured alignment precision error is small, and the accuracy of the measured alignment precision is improved.
The embodiment of the invention does not limit the specific shapes of the provided entity reference mark and the groove measuring mark, and the specific design is needed according to the practical application. Referring to fig. 1, in an embodiment of the present invention, the overlay alignment mark provided by the present invention may include:
four overlay regions 500 arranged in an array of two rows and two columns, each overlay region 500 includes a plurality of first extension portions 210 arranged in parallel and a plurality of second extension portions 410 arranged in parallel, the extension directions of the first extension portions 210 and the second extension portions 410 are the same, and the first extension portions 210 and the second extension portions 410 are arranged in a one-to-one correspondence manner in the extension directions, wherein an overlapping region is provided between an end of at least one first extension portion 210 and an end of the second extension portion 410 opposite thereto;
in the row direction and the column direction of the two rows and two columns of arrays, the extending directions of the respective corresponding extending portions of the two adjacent alignment regions 500 are perpendicular, wherein the first extending portions 210 of all the alignment regions 500 constitute the physical reference mark 200, and the second extending portions 410 of all the alignment regions 500 constitute the groove measurement mark 400.
It should be noted that, the extending direction in the above-mentioned embodiment of the present invention is the extending direction of the extending portion in the alignment area, wherein the extending directions of the extending portions in different alignment areas may be the same or different.
It can be understood that, in the alignment mark for alignment of alignment provided by the embodiment of the present invention, the extending directions of the extending portions corresponding to two adjacent alignment regions are perpendicular to each other in the row direction and the column direction of the two rows and two columns of arrays (for example, the extending directions of the extending portions corresponding to two adjacent alignment regions are defined in a rectangular coordinate system, and the extending directions of the extending portions corresponding to two adjacent alignment regions are the x direction and the y direction, respectively), so that the deviations of the physical reference mark and the groove measurement mark in the x direction and the y direction can be determined through the four alignment regions, and the alignment accuracy of the alignment mark can be finally determined.
In an embodiment of the present invention, in order to facilitate obtaining and distinguishing end portions of the first extending portion and the second extending portion at the overlapping region, in the overlapping region between the end portion of the first extending portion and the end portion of the second extending portion, and in a direction perpendicular to the extending direction, a width of the end portion of the second extending portion is greater than a width of the end portion of the first extending portion, and a side edge of the end portion of the first extending portion in the extending direction are exposed at the overlapping region.
As shown in fig. 1 and 3, the second extension portion 410 having an overlapping area with the first extension portion 210 according to the embodiment of the present invention includes: a strip-shaped extension 411 and an auxiliary extension 412;
in the direction perpendicular to the extending direction, the width D2 of the auxiliary extending portion 412 is greater than the width D1 of the strip-shaped extending portion 411, and the auxiliary extending portion 412 is located at the overlapping area of the first extending portion 210 and the second extending portion 410.
In addition, the first extension portion 210 and the second extension portion 410 that does not have an overlapping area with the first extension portion 210 are strip-shaped extension portions.
It can be understood that, the second extension portion provided by the embodiment of the present invention and having an overlapping area with the first extension portion may be a T-shaped structure, and the second extension portion includes a strip-shaped extension portion and an auxiliary extension portion, where the auxiliary extension portion provided by the embodiment of the present invention is an end portion of the second extension portion overlapping with an end portion of the first extension portion, the auxiliary extension portion and the end portion of the first extension portion have an overlapping area, and a width of the auxiliary extension portion is greater than a width of the end portion of the first extension portion. Due to the design of the special shape of the second extension part, after the CDSEM is adopted to obtain the appearances of the entity reference mark and the groove measurement mark, the position of the overlapping area of the first extension part and the second extension part can be conveniently determined, and the measurement efficiency is improved.
Referring to fig. 6, which is a flowchart of a method for manufacturing an overlay alignment mark structure according to an embodiment of the present invention, since the overlay alignment mark structure provided in any one of the embodiments is manufactured, the method for manufacturing an overlay alignment mark structure according to the present invention includes:
s11, providing a substrate.
And S12, forming a solid reference mark on one side surface of the substrate.
S13, forming a film covering layer covering the side of the entity reference mark, which faces away from the substrate.
S14, etching one side of the film covering layer, which is far away from the substrate, to form a groove measuring mark, wherein the entity reference mark and the groove measuring mark are combined to form an alignment mark; the groove measuring mark and the solid reference mark are provided with at least one overlapping area, and at least one side edge of the solid reference mark is exposed at the overlapping area.
Correspondingly, the invention further provides a semiconductor device, and the semiconductor device comprises the overlay alignment mark structure provided by any one of the embodiments.
Optionally, the semiconductor device provided in the embodiment of the present invention may be a semiconductor memory, and the present invention is not particularly limited thereto.
The invention provides an overlay alignment mark structure and a manufacturing method thereof, an overlay precision measuring method and a semiconductor device, comprising the following steps: a substrate; a physical reference mark located on one side surface of the substrate; and a film cover layer covering one side of the entity reference mark, which is far away from the substrate, wherein one side of the film cover layer, which is far away from the substrate, comprises a groove measurement mark, and the entity reference mark and the groove measurement mark are combined into an overlay alignment mark; the groove measuring mark and the solid reference mark are provided with at least one overlapping area, and at least one side edge of the solid reference mark is exposed at the overlapping area.
As can be seen from the above, in the technical scheme provided by the present invention, since at least one overlapping area is formed between the groove measurement mark and the entity reference mark, and at least one side edge of the entity reference mark is exposed in the overlapping area, the clearer and more accurate appearances of the entity reference mark and the groove measurement mark in the overlapping area can be obtained by the CDSEM measurement machine, so as to measure the alignment precision of the clearer and more accurate appearances, and thus, the measurement error of the alignment precision can be ensured to be small.
The previous description of the disclosed embodiments is provided to enable any person skilled in the art to make or use the present invention. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the generic principles defined herein may be applied to other embodiments without departing from the spirit or scope of the invention. Thus, the present invention is not intended to be limited to the embodiments shown herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.
Claims (7)
1. An overlay alignment mark structure, comprising:
a substrate;
a physical reference mark located on one side surface of the substrate;
and a film cover layer covering one side of the entity reference mark, which is far away from the substrate, wherein one side of the film cover layer, which is far away from the substrate, comprises a groove measurement mark, and the entity reference mark and the groove measurement mark are combined into an overlay alignment mark; at least one overlapping area is arranged between the groove measuring mark and the solid reference mark, and at least one side edge of the solid reference mark is exposed in the overlapping area;
the alignment mark comprises an alignment area, the alignment area comprises a plurality of first extension parts arranged in parallel and a plurality of second extension parts arranged in parallel, the extension directions of the first extension parts and the second extension parts are the same, the first extension parts and the second extension parts are arranged in a one-to-one correspondence manner in the extension directions, and an overlapping area is formed between the end part of at least one first extension part and the end part of the second extension part opposite to the end part of the first extension part; wherein the first extensions of all of the overlay regions constitute the physical reference marks and the second extensions of all of the overlay regions constitute the groove measurement marks;
at the overlapping area of the end part of the first extension part and the end part of the second extension part, in the direction perpendicular to the extension direction, the width of the end part of the second extension part is larger than that of the end part of the first extension part, and the side edges of the end part of the first extension part in the extension direction and in the direction perpendicular to the extension direction are exposed at the overlapping area; the second extension part having an overlapping area with the first extension part includes: a strip-shaped extension portion and an auxiliary extension portion; in the direction perpendicular to the extending direction, the width of the auxiliary extending portion is greater than that of the strip-shaped extending portion, and the auxiliary extending portion is located at an overlapping area of the first extending portion and the second extending portion;
a second extension portion having no overlapping area with the first extension portion, and not overlapping with the auxiliary extension portion in a direction perpendicular to the extending direction; and the second extension parts which have an overlapping area with the first extension parts and the second extension parts which do not have an overlapping area with the first extension parts are alternately arranged.
2. The overlay alignment mark structure of claim 1, wherein said overlay alignment mark comprises:
four overlay areas arranged in an array of two rows and two columns;
in the row direction and the column direction of the array of the two rows and the two columns, the extension directions of the extension parts corresponding to the two adjacent alignment areas are vertical;
at any one of the overlay regions and along the extending direction, the second extending portion is disposed at a side close to the adjacent overlay region.
3. The overlay alignment mark structure of claim 1, wherein the first extension portion and the second extension portion not having an overlapping area with the first extension portion are strip-shaped extension portions.
4. A method for manufacturing an overlay alignment mark structure is characterized by comprising the following steps:
providing a substrate;
forming a solid reference mark on one side surface of the substrate;
forming a thin film cover layer covering one side of the entity reference mark, which faces away from the substrate;
etching one side of the film covering layer, which is far away from the substrate, to form a groove measurement mark, wherein the entity reference mark and the groove measurement mark are combined to form an alignment mark; at least one overlapping area is arranged between the groove measuring mark and the solid reference mark, and at least one side edge of the solid reference mark is exposed in the overlapping area;
the alignment mark comprises an alignment area, the alignment area comprises a plurality of first extension parts arranged in parallel and a plurality of second extension parts arranged in parallel, the extension directions of the first extension parts and the second extension parts are the same, the first extension parts and the second extension parts are arranged in a one-to-one correspondence manner in the extension directions, and an overlapping area is formed between the end part of at least one first extension part and the end part of the second extension part opposite to the end part of the first extension part; wherein the first extensions of all of the overlay regions constitute the physical reference marks and the second extensions of all of the overlay regions constitute the groove measurement marks;
at an overlapping area of an end of the first extension portion and an end of the second extension portion, and in a direction perpendicular to the extension direction, a width of the end of the second extension portion is greater than a width of the end of the first extension portion, and the second extension portion, which has an overlapping area between the first extension portion and a side edge perpendicular to the extension direction and in the extending direction, where the end of the first extension portion is exposed at the overlapping area, includes: a strip-shaped extension portion and an auxiliary extension portion; in the direction perpendicular to the extending direction, the width of the auxiliary extending portion is greater than the width of the strip-shaped extending portion, the auxiliary extending portion is located at the overlapping area of the first extending portion and the second extending portion, the second extending portion which does not have the overlapping area with the first extending portion does not overlap with the auxiliary extending portion in the direction perpendicular to the extending direction; and the second extension parts which have an overlapping area with the first extension parts and the second extension parts which do not have an overlapping area with the first extension parts are alternately arranged.
5. An overlay accuracy measuring method applied to the overlay alignment mark structure of any one of claims 1 to 3, comprising:
acquiring the appearances of the entity reference mark and the groove measuring mark at an overlapping area by adopting a CDSEM measuring machine;
calculating deviation data between the side edge of the physical reference mark exposed in the overlapping area and the preset side edge of the groove measurement mark to determine the overlay accuracy.
6. The overlay accuracy measurement method of claim 5, further comprising, before using a CDSEM measurement machine to obtain the topography of the physical reference mark and the groove measurement mark at the overlapping region:
judging whether the alignment mark structure can adopt an IBO measurement mode to determine the alignment precision, if not, adopting a CDSEM measurement machine to obtain the appearance of the entity reference mark and the groove measurement mark at the overlapping area.
7. A semiconductor device comprising the overlay alignment mark structure of any of claims 1-3.
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| CN202111347473.5A CN114200780B (en) | 2020-05-29 | 2020-05-29 | Alignment mark structure for alignment mark alignment and related method and device |
| CN202010472791.3A CN111580351B (en) | 2020-05-29 | 2020-05-29 | Overlay alignment mark structure and related method and device |
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| CN202010472791.3A CN111580351B (en) | 2020-05-29 | 2020-05-29 | Overlay alignment mark structure and related method and device |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20100117799A (en) * | 2009-04-27 | 2010-11-04 | 주식회사 동부하이텍 | Overlay pattern and measuring method thereby |
| CN103165582A (en) * | 2011-12-08 | 2013-06-19 | 台湾积体电路制造股份有限公司 | Structure and method for e-beam in-chip overlay mark |
| CN110034097A (en) * | 2018-01-12 | 2019-07-19 | 中芯国际集成电路制造(上海)有限公司 | Semiconductor structure and forming method thereof |
Family Cites Families (7)
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| US7084427B2 (en) * | 2003-06-10 | 2006-08-01 | International Business Machines Corporation | Systems and methods for overlay shift determination |
| KR100741989B1 (en) * | 2006-06-23 | 2007-07-23 | 삼성전자주식회사 | Overlay mark and method of measuring an overlay degree |
| CN102314074B (en) * | 2010-06-30 | 2013-04-10 | 上海微电子装备有限公司 | Mask plate and mask plate manufacturing method |
| US8908181B2 (en) * | 2012-06-28 | 2014-12-09 | Taiwan Semiconductor Manufacturing Company, Ltd. | Overlay mark and method of measuring the same |
| US9007571B2 (en) * | 2013-08-20 | 2015-04-14 | United Microelectronics Corp. | Measurement method of overlay mark |
| US10859924B2 (en) * | 2017-11-15 | 2020-12-08 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method for manufacturing semiconductor device and system for performing the same |
| CN111312691B (en) * | 2020-03-02 | 2021-03-09 | 长江存储科技有限责任公司 | Overlay alignment mark structure, overlay alignment measurement method and semiconductor device |
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| KR20100117799A (en) * | 2009-04-27 | 2010-11-04 | 주식회사 동부하이텍 | Overlay pattern and measuring method thereby |
| CN103165582A (en) * | 2011-12-08 | 2013-06-19 | 台湾积体电路制造股份有限公司 | Structure and method for e-beam in-chip overlay mark |
| CN110034097A (en) * | 2018-01-12 | 2019-07-19 | 中芯国际集成电路制造(上海)有限公司 | Semiconductor structure and forming method thereof |
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