TWI288307B - Method of measuring the overlay accuracy of a multi-exposure process - Google Patents

Abstract

A method of measuring the overlay accuracy of multi-exposure process is provided. The present invention is utilizing a scanning electron microscope for monitoring the overlay accuracy real-time during the multi-exposure process, in stead of the conventional optical measurement method.

Description

1288307___ V. INSTRUCTION DESCRIPTION (1) ^ 〆, [Technical Field] The present invention relates to a measurement overlay error in the process of multiple exposures, which can measure the error of the overlay every time: method. Into the exposure, = related, 鱿, and -, [prior art] In the manufacturing process of the semiconductor, each time before the implementation, the pattern energy above the exposure of the so-called alignment must be performed first. Moved correctly to the photoresist, and in the 'making' of the light farmer, can be aligned with the previously established pattern. 4 different range of j. The wafer is composed of a plurality of small wafers, each - The inter-turn is separated by a scribe 1 ine, so before the step of performing the photoresist exposure on the wafer A and the small wafer, the small wafer is on each small cut (scribe 1 ine) a test structure in which a plurality of overlay marks are formed in the gap, and the overlay test is measured, and the overlay tolerance is adjusted to be adjusted as a hall light transmission step. The basis of the position of the mask is such that the light-resistance of the mask on the mask is transferred to the small wafer without any error. (Over lay) (not shown) is optically scanned small

Page 5 1288307_ V. INSTRUCTIONS (2) Four pairs of marks 1 0 0 on the scribe line around the wafer (not shown) are used to obtain information on the overlay error. A schematic view of each of the formed stacked pairs of markers 100 is shown in FIG. 1A, and a schematic cross-sectional view of each of the formed stacked pairs of markers 100 is as shown in FIG. A schematic cross-sectional structure taken along the 1B-1B' section line in Figure 1A). Referring to the first A picture and the first B picture, firstly, the overlapping mark 1 0 0 is formed on the wafer (not shown), and a recess pattern 1 0 2 is formed on the layer structure 106 before completion. The recess pattern 1 0 2 can be observed as four rectangular rectangles of the same size from the top view of the first A diagram, and arranged to form a rectangular outer periphery, but the four recess patterns 1 0 2 are not connected to each other. The method of forming the four recess patterns 1 0 2 can form a trench structure (not shown) by etching, or can be made natural by filling the formed trench structure. The structure of the recess is formed, and the purpose thereof is to provide an accurate positioning, so as to facilitate comparison and comparison with the pattern transferred to the photoresist when the test exposure procedure is performed, to obtain the information of the overlay error. Next, steps of the lithography process such as photoresist coating, exposure and development are used to form four photoresist patterns of the same size in the inner periphery of the rectangular rectangle, that is, in the range surrounded by the four recess patterns 102. 0 4 is in the front layer junction _ structure 1 0 6 , each photoresist pattern 104 is observable from the top structure diagram of the first A diagram as four rectangular patterns of the same size, and arranged to form a smaller rectangle Inner circumference, and there is no contact between each photoresist pattern 104. The process of this test exposure forms four photoresist patterns 1 0 4 and

Page 6 1288307 ~ V. Description of the invention (3) Forming a recessed pattern 1 〇2 is arranged in the same manner, and in the same horizontal direction (direction) and in the vertical direction (Y direction) corresponding to the two outer = map" Between the two inner photoresist patterns, the first intermediate line (not shown) is set at the beginning, and the outer surface of the stack of the first mark in the first B is taken as an example. The two recessed patterns 1 0 2 and the inner two optical resists I and i0 4 are set to be in line with each other when they are formed, so that according to the result of the test exposure, the Ap is not affected by the apricot. The formed photoresist pattern 104 = the recessed pattern 1 〇 2 formed to obtain the other two peripheral recess patterns 10 2 and the two inner circumference photoresist patterns ln4 of the overlay error. &9 r , case 104 is also in such a way as to observe the overlay error information in the vertical direction. And (4) after the mark 100 is formed, then the optical square illusion is used to measure the structure of each =t » upper 00, And horizontally and vertically in the horizontal and vertical scanning directions Whether there is an alignment error such as the size ratio: the basis and reference for the correction when the formal exposure to the light exposure program. η < The first c image is a conventional optical or vertical offset In the case of the recessed pattern 102, a recessed 1 0 4 is obtained to obtain a protruding waveform of 1 0 4 '. The method detects the overlapping pair of markers 1 0 0 (in the water: the obtained signal, which scans the outside of the nie ^ i〇2,: Scanning the photoresist pattern and the + κ meter can be detected according to the detected

Page 7 1288307 V. Invention Description (4) The concave waveform 1 0 2 ' and the protruding waveform 1 0 4 ' respectively calculate the center line position of the waveform, and measure the center line 1 1 0 between the two concave patterns 1 0 2 And the distance between the center line 1 1 2 between the two photoresist patterns 104, to obtain a horizontal and vertical offset of the overlap mark 1 0 0; and the stack meter must collect four The overlap of the corners of the mark 1 and its overlap error values in the horizontal and vertical directions can be used to judge the overlap error generated during the entire test exposure process, and the exposure process is officially performed after the error correction according to the stack Parameter settings. The above method for scanning a pair of marks in an optical detection manner by using a stack-up measuring instrument to obtain a stacking result has an optical resolution limited by the wavelength of the light source and has a limit, so that the formed overlapping marks must satisfy the overlapping pair The degree to which the meter can be detected and recognized, so it is impossible to detect the smaller size of the overlay mark. Conventionally, by using a stack-up measuring instrument to scan a pair of marks in an optical detection manner to obtain a stacked result, the calibration process of the test exposure must be repeated until the set value is less than the set standard value, so that the next process step can be continued. The length of the process is prolonged, which in turn reduces production capacity. Moreover, the method of stacking and measuring must rely on the concave pattern on the front layer structure as a basis for the alignment of the photoresist pattern during the subsequent exposure, so if the photoresist pattern is to be formed by multiple exposures, the conventional stack The method of measurement is not applicable, and more layers and more complex overlay marks will exceed the capabilities and limits of the above-described conventional overlay measurement method.

Page 8 1288307 V. INSTRUCTION DESCRIPTION (5) III. SUMMARY OF THE INVENTION In view of the above-mentioned prior art, a problem related to the use of optical measurement of overlay error is provided. The present invention provides a method for measuring overlay error. A scanning electron microscope (SEM) is used to replace the conventional stacking measuring instrument to detect the error of the overlapping pair with higher resolution, and can be used to detect multiple exposures. The resulting photoresist pattern has an error of 'pair' and can be used to align the previously formed photoresist pattern as an alignment during subsequent exposures, thereby instantly detecting the error of the overlay and reducing the time taken for the exposure process. Improve the efficiency of detecting overlay errors. 4. Embodiments The following is a detailed description of the present invention, and the description of the scanning electron microscope and the overlapping marks in the following description does not include the complete principle and analysis of the structure. The prior art of the present invention is hereby incorporated by reference in its entirety to the extent of the present disclosure. Further, the related drawings in the following texts are not drawn to the actual scale, and their functions are only for expressing the features of the present invention. _ , the know-how electron microscope mainly uses a high-energy electron beam to inject an object to be measured ' and analyzes the fine structure and shape of the surface of the object to be tested by detecting the correlated secondary signal (such as secondary electrons) reflected back. Appearance and electron beam

1288307 '' ——--_ V. The higher the energy of the invention (6), the shorter the wavelength of the light can be used, the smaller the pattern can be observed; the scanning electron microscope is used as the measurement The workmanship will be able to detect the blood-limiting ability of the overlap error. However, the multi-exposure stack-to-measurement method of the present invention is privately τ to γ-input. First, in the four corners, the music mask 200 is formed into four sets of first stack detection patterns 2 0 2, and each +袓=detection pattern 202 is as shown in the second a diagram. It consists of: the mother group first shadow system ^ ^ I flat groove pattern. Next, a first micro: ", including photoresist coating, exposure and development, etc.:: the formation of the ceremony is 弑 silk! _丄 t ^ ^, and with positive light I®

Warfare shifts the above four sets of the first stack of check layers 2 2 0 to form s #卜L团案2 0 2 in a photoresist j~ double four sets of first trenches, each group in the picture It is observed that the first-level vertical groove ί 2 3π^ έΒ ^ L 4 Xing - the first horizontal groove birch 23 0. The first photomask 2 has a forty-slot measurement pattern 2 0 2 on the 光, but the first number of the first 《 尤 以 筮 筮 筮 筮 第一 第一 第一 第一 第一 第一 较佳 较佳 较佳In the example, the limit is 'can be based on the actual situation and the number of detection patterns 202 that need to be increased, and the position formed by A\minus/this first stack is at the four/corner positions of the first-mask m Not limited to only

Next, four sets of second=^2 1 2 are also formed on the four corners of the corresponding positions on the four corners of the second mask 21〇, and each set of the second stack detection pattern 2丨2 is For example, 2' Bay 1 is represented by two second vertical groove patterns and two second waters as shown in the figure (the two second vertical groove patterns are in the first vertical groove pattern).

Page 10 J288307_ V. INSTRUCTIONS (7^ — — :: :::: and the two second horizontal groove patterns are in the middle of the first horizontal groove). Then performing a second lithography process, including and transferring the second stack 212 to the photoresist layer 22G in a positive photoresist formation manner to form four sets of second trenches, the mother worm, the # 沟The trough is composed of two second vertical grooves 2 2 6 , 2 2 8 and two first horizontal grooves 232, 234, as shown in the second c. The most c is the second c picture, which performs the first lithography process shifting, the second lithography process, and the second lithography process shifting the second stacked pair of the detecting resist layer 220 to form the first trench and the second trench. The top view m: the first vertical trench m in the trench and the two = two vertical trenches 226, 228 in the second trench, arranged on the photoresist layer 22, 2 = f = scan line 22 Passing, and the horizontal scanning line 22H intersects the first groove 224 perpendicularly, and the first horizontal groove in the first groove is the second horizontal groove 232, 234 in the groove, in the photoresist The arrangement on layer 220 can be passed by a vertical scanning line 22V, and the vertical scanning line 22V intersects perpendicularly with the first horizontal groove 230. Therefore, if the horizontal scanning line 22H is used as the section line, the second d can be borrowed. The figure shows the cross-sectional position of the first vertical trench 22 4 and the two second vertical trenches 226, 22 8 on the photoresist layer 22 0: the two second vertical trenches 2 26 and 228 are respectively located before Forming the two sides of the first vertical groove 224, and respectively having a horizontal separation distance 3 from the first vertical groove 2 2 4 and a horizontal separation distance b. In the second mask 2 1 Forming a second stack of detection patterns 2 1 2 formed on the crucible

1288307 V. The position of the invention (8) corresponds to the position where a field on the first mask 2 〇 is formed. Because of the application of the present invention, the car-to-detection pattern 2 0 2 detects multiple exposures of the stack-to-measurement method, the f-f body embodiment is used to transfer the first stack of detection patterns 2 0 2 to light The first photomask 200 is grooved, and then transferred to the first field by the second mask 2 10 to form a first trench with the same photoresist layer 22 0 to form a second trench. Inspection, the pattern 21 2 to the straight groove 224 and the first horizontal groove 23 〇 on the two sides of the first vertical groove 226, 228 and the two fr ... 匕 , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , Whether the two masks 210 are in an overlapping error with respect to the first mask 200. Next, a scanning electron microscope (not shown) detects the stacking error of the second trench formed by the photoresist layer 220 with respect to the first trench. The scanning electron microscope is based on a horizontal scanning line 22Η passing through the first vertical groove 2丨6 and the two second vertical grooves 228, 203, and through the first horizontal groove 2 30 and the two second horizontal grooves. The vertical scan line 22V' of the trenches 232, 234 measures the stacking error between the second trench and the first trench. The stacking error is composed of a horizontal error and a vertical error, and the direction of the horizontal error is the distance between the first vertical groove 2 2 4 and the two second vertical grooves 2 2 6 and 2 2 8 . To determine, the magnitude of the horizontal error is one-half the distance between the first vertical groove 224 and the two second vertical grooves 2 26, 228; and the direction of the vertical error is first The distance between the horizontal groove 230 and the two second horizontal grooves 2 3 2, 2 3 4 is determined by the distance between the horizontal grooves 230

Page 12 1288307 V. Description of invention (9) ___ 疋 'The vertical error is the distance between the first Pihua, and the 0 π flat groove 232, 234. The difference between the gap and the two second water two D Figure to measure the first knife in the first groove. Referring to the first two second vertical grooves 226, 228 from the (three) 224 and the second groove two light" _ the first stack of the second two pairs of two cases of the second stack of detection patterns 21 2 in the transfer The photoresist layer 220 in the first hood 210 does not have any horizontal direction. The cases 202 and 212 are separated by a distance a equal to the separation distance b. If the measurement is performed, the gate and the difference occur, then the distance between the two is b. When the interval distance is two, the p2 distance a is not equal to ^; the direction of the crab pair detection pattern 212 relative to the overlap detection network vacancy (10) (for example, if a is greater than b, then the second 仏f pattern 202 The horizontal error 4 2 the first-stack pair detection pattern 2 0 2 in the water;::J detection pattern 212 relative offset), and the meter flute -^ = thousands of directions to the left direction peak detection map lucky 9η9ί I out The first pair of detection patterns 2丨2 is one-half of the difference from the first generation (ie, 丨.5, 丨 distance a and separation distance b. In this first preferred embodiment, the difference phase g is for the first-to-stack pair Detecting the water ΐ of the pattern 202 : : Checking the pattern pattern 2 0 = « the second stack of detection patterns 212 with respect to the first and " vertical error = 202 Poor; J in the first Feng pair detection ΪΪ? error, you can get the second reticle to find the four a vertical vertical error information on the two corners. The cover is relatively better than the first reticle 200 In the embodiment, according to the first-mask 2

Page 13 1288307 V. Description of the Invention (1〇) ~ The second stack 210 has a stacking error at four corners to obtain complete overlay error information, but the first stack pair used to detect the overlay error Detecting FIG. 1 and the second overlapping detection pattern 2 2 2, the number and formation position thereof are not limited to the arrangement of the above four groups at four corners, and are not limited to only shifting the pattern onto the small wafer or small. The scribe line between the wafer and the small wafer is on the one hand, and the multi-exposure stacking result measurement method described in the present invention is not limited to the result of the above-mentioned double exposure measurement stacking, and any step of performing the exposure, The results of the relative stacking after the exposure step can be measured by a scanning electron microscope. m - person is exposed to the light, · i: °r into the second * pair, *212, 匕 = = = in the groove 'and then measured the second stack check = ζ 检测 检测 detection pattern 202 in the horizontal direction As well as the ancient case 2, for the first earth two-machine. However, the first stack of the first mask 2 is folded, and the second stack of the masks 210 formed on the mask 210 is arranged in a pattern. Referring to the third A ten: 2 case 212 is not limited to t. In the specific embodiment, the second case 302 is used in the first invention, and the second vertical groove + the first stack check on the cover ☆ Composition, and execution - 4th slot system? A first groove is formed on the second (not shown), and the step is to form a light-vertical groove and a first horizontal groove. The first groove is formed by two uniform chambers. . Next is located in one

1288307

The second stack of oblique (1) groove patterns on the second mask 3 1 0 and the two second horizontal inspection/two cases 312, and the second - ancient groove/groove pattern are aligned with the two first sections -垂 ^, cover = composed (this second vertical groove ^ the two second horizontal groove pattern: JJ groove; f the position of the line ' and the groove pattern as the alignment ^ j, a mask 3 After the first horizontal step on 0 0, the photoresist can be opened in the above-mentioned photoresist. When the second lithography process is performed, the second groove is located in the second groove of the second groove. Composition: In the two second c-pictures, the application of the trench 1 can have the same result as the first trench and the second trench, and a scanning electron is formed. The microscope detects the second mask 310 with respect to the 笫_., and then the stacking error manner is also the same as the first application of the present invention, the photomask 30. The other specific implementation of the field in the second layer of light a first stack of detected overlay detection patterns formed on the cover (the second stack of detection patterns and the first stack, the circle and the second row do not overlap), as long as they can pass through the lithography Cheng Zhibu ^ and ^ delete the pattern flat, the detection pattern and the second stack of detection patterns to the same photoresist exhibition shift first allows the scanning electron microscope along a horizontal scan line and - ^ ' and detect the photoresist The offset of the first trench and the second trench on the layer on the horizontal and direct sweeping lines, which can be used to detect the vertical direction of any two-layer mask; for example, the first mask is formed a stack of 3 opposite stacks

1288307_ V. Description of the invention (12) consisting of two first vertical groove patterns and two first horizontal groove patterns, and then a second in the second overlapping detection pattern formed on the second mask The vertical groove pattern is composed of a second horizontal groove pattern; and the second vertical groove pattern is aligned with the position of the line of the two first vertical groove patterns on the first overlapping detection pattern, and The second horizontal groove pattern is aligned with the position of the line of the two first horizontal groove patterns on the first overlapping detection pattern, and thus can also be applied to the first and second preferred embodiments of the present invention. Generally, a trench arrangement as shown in FIG. 2C is formed on a photoresist layer. In addition, the present invention does not limit whether any vertical trench and horizontal trench included in the first trench and the horizontal trench are in contact or intersect, as long as the horizontal scan line can be perpendicular to the first vertical trench. The intersecting and penetrating through the second vertical trench, and the vertical scanning line can vertically intersect the first horizontal trench and penetrate the second horizontal trench. The following is a third preferred embodiment of the present invention, which is a description of another design manner of the first overlapping detection pattern and the second overlapping detection pattern on any two-layer mask in multiple exposure, with reference to the fourth A is a first stack of detection patterns 420 formed on a first mask 400, which is formed by joining a first vertical trench pattern and a first horizontal trench pattern. The second detection pattern 4 1 2 formed on a second mask 410 is formed by two groups of a second vertical groove pattern and a first The second L-shaped detection pattern formed by the two horizontal groove groove pattern and the third L-shaped detection pattern are formed (the second L-shaped detection pattern and the third L-shaped detection pattern are combined with the first L-type detection pattern)

Page 16 1288307 V. INSTRUCTIONS (13) The patterns are arranged in the same manner and aligned with the first L-shaped detection pattern on the first mask 4 to be enclosed therein without contact. Therefore, referring to the fourth, if the first and second masks 40 0, 410 are respectively performed in the steps of performing the first and second lithography processes, a first trench can be formed on the same photoresist layer 420. 422 and two second trenches 424, 426. Then, according to the present invention, a scanning electron microscope is used to detect along a horizontal scanning line 42H and a vertical scanning line 42V, thereby obtaining the first trench 422 and the second trench 424, 426 in the horizontal direction. And the stacking pair in the vertical direction, and then calculating the error information of the second mask 41 〇 relative to the first stack.巧早70 From the above description of the first and second examples of the application of the present invention, it can be known that the present invention is capable of measuring multiple exposures of two-second scanning electrons in a timely manner by means of a micro-mirror. The characteristic is the use of scanning electron microscopy to stack the results, the resolution is not high, and: = the measurement of the error and the result of the error in the first groove formed in the photoresist The stacking method reduces the size of the resolution, and the first trench can also be formed on the scribe line between the high-wafer wafer and the small wafer, and is not limited to the above-mentioned invention. A person skilled in the art of applying for patent rights should be able to use the preferred embodiment, and is not intended to limit the description of the day and day, and is not familiar with the description and implementation.

1288307_ V. DESCRIPTION OF THE INVENTION (14) Equivalent changes or modifications made in the spirit of the invention are intended to be included in the scope of the following claims. Φ ginseng

Page 18 1288307__ Simple description of the diagram V. [Simple description of the diagram] The first diagram A is a schematic diagram of a top view of a conventional overlay mark. The first B is a schematic cross-sectional view of a conventional overlay mark. The first C picture is a conventional example of detecting the overlapping error signals obtained by overlapping the marks in an optical manner. Figure 2A is a top plan view showing the application of the first stack of detection patterns on the first mask in a preferred embodiment of the present invention. Figure 2B is a top plan view showing the application of a second stack of detection patterns on a second mask in accordance with a preferred embodiment of the present invention. The second C is a top plan view showing the formation of the first trench and the second trench on the photoresist layer in a preferred embodiment of the present invention. The second D is a schematic cross-sectional view showing the formation of the first trench and the second trench on the photoresist layer in a preferred embodiment of the present invention. Figure 3A is a top plan view showing the formation of a first stack of detection patterns on a first mask in accordance with another preferred embodiment of the present invention. Figure 3B is a top plan view showing the formation of a second stack of detection patterns on a second mask in accordance with another preferred embodiment of the present invention. Figure 4A is a top plan view showing the formation of a first stack of detection patterns on a first mask in accordance with yet another preferred embodiment of the present invention. Figure 4B is a top plan view showing the formation of a second stacked detection pattern on the second mask in accordance with still another preferred embodiment of the present invention. Figure 4C is a top plan view showing the formation of the first trench and the second trench on the photoresist layer in accordance with still another preferred embodiment of the present invention.

Page 19 1288307 Schematic diagram briefly shows the main part of the symbol: 10 0 stacked pair of marks 102 recessed pattern 1 0 2 'recessed waveform 1 0 4 photoresist pattern 104' protruding waveform 106 front layer structure 108 base layer 11 0, 1 1 2 center line® 2 0 0 first mask 2 0 2 first stack pair detection pattern 210 second mask 212 second stack detecting pattern 2 2 0 photoresist layer 2 2 Η horizontal scanning line 22V vertical scanning line 2 2 2 front layer structure 224 first vertical groove 226, 228 second vertical groove reference 23 0 first horizontal groove 232, 234 second horizontal groove

Page 20 1288307_ Schematic description 3 0 0 First mask 3 0 2 First stack detection pattern 310 Second mask 312 Second stack detection pattern 40 0 First mask 40 2 First stack detection pattern 410 second mask 412 second stack detection pattern 42 0 photoresist layer 42H horizontal scanning line Φ 42V vertical scanning line 422 first trench 424, 42 6 second trench

Page 21

Claims (1)

I 6. Application of f5? Scope of application ~~ Patent application scope _η 曰Correction 1. A method for measuring the overlap of multiple exposures, comprising: forming a first stack of detection patterns on a first mask; a first lithography process, shifting the first stack of detection patterns onto a photoresist layer to form a first trench; forming a second overlay detection pattern on a second mask; performing a second micro a process of moving the second stacked pair of detection patterns onto the photoresist layer to form a second trench, the first trench and the second trench forming three vertical trenches and three horizontal trenches; A scanning electron microscope detects a stack error of the second trench on the photoresist layer with respect to the first trench. 2. The method according to claim 1, wherein the first trench comprises a first vertical trench and a first horizontal trench, and the second trench comprises Two second vertical grooves and two second horizontal grooves. 3. The method according to claim 2, wherein the second overlapping detection pattern on the second mask is formed by performing the second lithography process. The two second vertical trenches may be formed at equal distances on both sides of the first vertical trench on the photoresist layer, and one side of the first horizontal trench on the photoresist layer The formation of the two second horizontal grooves at equal distances is premised. Page 22 1288307 _ Case No. 93112272 _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ Calculating the second groove by horizontally scanning the first vertical groove and one of the two second vertical grooves, and scanning the vertical line through one of the first horizontal groove and the two second horizontal grooves The stacking error between the slot and the first trench, and the horizontal scan line is perpendicular to the first vertical trench, the vertical scan line being perpendicular to the first horizontal trench. 5. The method of stacking multiple exposures as described in claim 4, wherein the stacking error is composed of a horizontal error and a vertical error, the direction of the horizontal error being the first vertical The distance between the trench and the two second vertical trenches is determined by the distance between the first vertical trench and the two second vertical trenches. One of the divisions, and the direction of the vertical error is determined by the distance between the first horizontal groove and the two second horizontal grooves, and the vertical error is the first horizontal groove and The spacing between the two second horizontal grooves is one-half of the difference. 6. The method according to claim 5, wherein the first reticle and the second reticle are arranged in two consecutive exposure processes. 7. The stacking measurement method for multiple exposures as described in item 5 of the patent application scope 12883〇7ΐ光Π The first mask and the first light-armed military An Yao recognized the women's volleyball team in two discontinuous ^, as its application: patent scope 5: ί ΐ · light stack on the measurement side / The first vertical groove is connected to a horizontal groove of the cancer patient. g method, ° 申申 ^ patent scope range item 8 of the t-exposure stacking measurement square horizontal yellow 2 the two second vertical groove system / knife and the corresponding two tenth / groove Connected. 1U弟 I Q • ^Multiple exposures as described in the scope of the patent application section wherein the first groove includes two first-vertical groove pairs, the first measurement, the flat groove. The groove includes a small vertical groove and two second electrodes. The multiple exposure method described in the first aspect of the patent application, wherein the second stack is on the second mask; When the second lithography process is performed, the groove can be formed on the pupil at an equal distance between the apertures and the first vertical trenches, and on the photoresist layer. The first horizontal groove 2 - the vertical groove position forms the two second horizontal grooves as a front surface and an equal distance 1 2 · as described in the scope of claim ,i, wherein the scanning method The electron microscope is used to measure the two first verticals according to the stack of two Page 24 1288307 __ Case No. 93112272_年月日日__ Sixth, the patented range groove and one of the second vertical groove horizontal scanning line, and through the first - horizontal groove and the two second One of the horizontal grooves is perpendicular to the scan line to calculate the stacking error between the second trench and the first trench, and the horizontal scan line is perpendicular to the two first vertical trenches, the vertical scan The wire system is perpendicular to the first horizontal groove. 13. The method of overlaying multiple exposures as described in claim 12, wherein the overlay error is comprised of a horizontal error and a vertical error. The direction of the horizontal error is determined by the distance between the second vertical trench and the two first vertical trenches, and the horizontal error is the second vertical trench and the two The spacing between the first vertical grooves is one-half of the difference, and the direction of the vertical error is determined by the distance between the first horizontal grooves and the two second horizontal grooves. The magnitude of the vertical error is one-half of the difference between the distance between the first horizontal groove and the two second horizontal grooves. 14. The method of overlaying multiple exposures as described in claim 13 wherein the first mask and the second mask are arranged in two consecutive exposure programs. 1 5. A method of overlaying multiple exposures as described in claim 13 wherein the first reticle and the second reticle are arranged in two discrete exposure processes. Page 25 1288307 a Shame 93JJ2272 Force, patent scope g 'includes: 〇 Μ Μ detection pattern is formed in the vertical groove pattern and a first water: the stacked pair detection pattern is formed in the vertical groove pattern and a first a horizontal groove pattern formed on the first reticle on the second reticle is disposed on the second light, and the groove pattern is in the first reticle and the second vertical groove First and second horizontal trenches FIG. 16. A multi-exposure genre-first-stack pair detection port pattern on the reticle and having at least one; a first flat trench pattern; and a first one, f. The second stack of the pattern of the hometown pattern has a mask and has at least a "^ flat groove pattern, the position of the second-two-two-two is parallel to the first _ ^ ί straight groove diagram The position formed on the non-overlapping mask is parallel to the position formed on the first: but the groove pattern constitutes three vertical groove patterns, and the three three-dimensional groove patterns are formed. 17. The application of Patent No. 16 of the patent application, wherein the first stack of detection patterns ???=exposure stacking pattern-first-horizontal groove pattern, straight groove pattern and:; second vertical The groove pattern and the two second two-dimensional: J straight groove patterns are formed by using the first: vertical groove pattern as a Ξ pattern: (2) Γ horizontal groove-first horizontal groove ^ · as claimed in claim 1 7 The f = exposure stacked pair detection pattern, wherein the first vertical groove pattern is associated with the first horizontal groove pattern 1288307 The water is applied to the patent range, and the two vertical groove patterns are respectively connected to the corresponding flat groove pattern. The combination of the multiple exposures described in item 16 of the patent scope; the second water: two: Ϊ ί _ 4 pairs of detection patterns are two ί a vertical groove pattern 一 'one horizontal groove Formed by a pattern, the first pair of detection patterns are composed of a 兮=Γ vertical groove pattern and two second horizontal groove patterns, and a vertical, smudge® case is aligned with the two first The vertical groove pattern is a flat groove pattern which is a multi-f exposure stack detection pattern and two second waters as described in the item 16 of the first level; = detection pattern: by the brother: vertical The groove pattern, the first-think groove pattern and a second water + groove pattern are formed, and the center line:: groove; the y system is aligned with the two-flat groove pattern; the line groove... ☆ Two first 7