CN115560884A - Touch pressure sensor and preparation method thereof - Google Patents
Touch pressure sensor and preparation method thereof Download PDFInfo
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L1/00—Measuring force or stress, in general
- G01L1/14—Measuring force or stress, in general by measuring variations in capacitance or inductance of electrical elements, e.g. by measuring variations of frequency of electrical oscillators
- G01L1/142—Measuring force or stress, in general by measuring variations in capacitance or inductance of electrical elements, e.g. by measuring variations of frequency of electrical oscillators using capacitors
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L1/00—Measuring force or stress, in general
- G01L1/14—Measuring force or stress, in general by measuring variations in capacitance or inductance of electrical elements, e.g. by measuring variations of frequency of electrical oscillators
- G01L1/142—Measuring force or stress, in general by measuring variations in capacitance or inductance of electrical elements, e.g. by measuring variations of frequency of electrical oscillators using capacitors
- G01L1/148—Measuring force or stress, in general by measuring variations in capacitance or inductance of electrical elements, e.g. by measuring variations of frequency of electrical oscillators using capacitors using semiconductive material, e.g. silicon
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/30—Stacked capacitors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/38—Multiple capacitors, i.e. structural combinations of fixed capacitors
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Abstract
The invention provides a tactile pressure sensor and a preparation method thereof, wherein the tactile pressure sensor comprises a contact layer, an upper electrode layer, an upper dielectric layer, an intermediate layer, a lower dielectric layer and a lower electrode layer, wherein a first electrode is arranged between the upper electrode layer and the upper dielectric layer, a second electrode is arranged between the upper dielectric layer and the intermediate layer, a third electrode is arranged between the intermediate layer and the lower dielectric layer, and a fourth electrode is arranged between the lower dielectric layer and the lower electrode layer; the first electrode and the second electrode constitute a first flat capacitor, the second electrode and the third electrode constitute a second flat capacitor, the third electrode and the fourth electrode constitute a third flat capacitor, and the first flat capacitor, the second flat capacitor and the third flat capacitor are arranged in parallel. The technical effect of the invention is that the structural design is reasonable, which is helpful for improving the resolution of the touch pressure sensor.
Description
Technical Field
The invention belongs to the technical field of tactile pressure sensors, and particularly relates to a tactile pressure sensor and a preparation method thereof.
Background
The touch pressure sensor is widely applied to the technical fields of robot skin, physiological information monitoring, intelligent wearing and the like, and mainly has the functions of enabling a carrier to acquire information of a target object and an external environment or detecting and sensing a series of physical characteristic quantities when the carrier interacts with the outside. The flexible touch sensor based on flexible electronics has the characteristics of lightness, thinness, portability and wearability, and becomes the development direction in the future. According to different sensitivity mechanisms, the touch sensors can be mainly classified into piezoresistive touch sensors, piezoelectric touch sensors, capacitive touch sensors, other types of touch sensors and the like, wherein the capacitive touch sensors have the advantages of high response speed, large measurement range, high spatial resolution and the like. A typical capacitive flexible touch sensor adopts a parallel plate capacitor structure, an upper electrode, a lower electrode and an intermediate dielectric layer are all made of flexible polymer materials, and under the action of contact force, the intermediate dielectric layer deforms, so that the distance between the upper electrode and the lower electrode changes, and the upper electrode and the lower electrode are converted into corresponding capacitance values to be output.
At present, a common capacitive flexible touch sensor adopts a single-layer capacitive structure, that is, only two electrode layers and one intermediate dielectric layer. Under the condition of determining material parameters, the single-layer capacitor structure can only improve the initial capacitance value by increasing the electrode area on a plane, which is not beneficial to improving the resolution of the touch sensor.
Disclosure of Invention
The invention aims to at least solve one of the technical problems in the prior art and provides a new technical scheme of a touch pressure sensor and a preparation method thereof.
According to a first aspect of the present application, a tactile pressure sensor is provided, which includes a contact layer, an upper electrode layer, an upper dielectric layer, an intermediate dielectric layer, a lower dielectric layer, and a lower electrode layer, wherein the contact layer, the upper electrode layer, the upper dielectric layer, the intermediate dielectric layer, the lower dielectric layer, and the lower electrode layer are sequentially stacked from top to bottom;
a first electrode is arranged between the upper electrode layer and the upper dielectric layer, a second electrode is arranged between the upper dielectric layer and the middle dielectric layer, a third electrode is arranged between the middle dielectric layer and the lower dielectric layer, and a fourth electrode is arranged between the lower dielectric layer and the lower electrode layer; the first electrode and the third electrode are short-circuited, the second electrode and the fourth electrode are short-circuited, the first electrode and the second electrode form a first flat capacitor, the second electrode and the third electrode form a second flat capacitor, the third electrode and the fourth electrode form a third flat capacitor, and the first flat capacitor, the second flat capacitor and the third flat capacitor are arranged in parallel.
Optionally, a protrusion extending away from the upper electrode layer is disposed in a middle portion of the contact layer.
Optionally, the protrusions are hemispherical structures, cylindrical structures, or prismatic table structures.
Optionally, a first supporting unit and a first deformation unit are arranged on one side of the upper dielectric layer facing the upper electrode layer;
the position of the first supporting unit corresponds to the position of the protrusion of the contact layer, and the first deformation unit is annularly arranged around the first supporting unit.
Optionally, a part of the first supporting unit is located below the middle of the protrusion; and part of the first supporting units are positioned at the edge part of the upper dielectric layer.
Optionally, the first support unit is a frustum pyramid structure, a top surface of the frustum pyramid structure is connected with the upper electrode layer, and a bottom surface of the frustum pyramid structure is connected with the upper dielectric layer;
the first deformation unit comprises a plurality of pyramid structures arranged at intervals, the pointed portions of the pyramid structures are connected with the first electrode layer, and the bottoms of the pyramid structures are connected with the upper dielectric layer.
Optionally, a second supporting unit and a second deforming unit are arranged on one side of the lower medium layer facing the medium layer;
the position of the second supporting unit corresponds to that of the first supporting unit, the position of the second deformation unit corresponds to that of the first deformation unit, the shape and the size of the second supporting unit are the same as those of the first supporting unit, and the shape and the size of the first deformation unit are the same as those of the second deformation unit.
Optionally, the first electrode includes four first sub-electrodes connected in series in sequence, the four first sub-electrodes are distributed in a matrix, and the bottom of each first sub-electrode is connected to the tip of the pyramid structure;
the third electrode comprises four third sub-electrodes which are sequentially connected in series, the four third sub-electrodes are distributed in a matrix manner, and the bottom of each third sub-electrode is connected with the tip of the pyramid structure;
the positions of the first sub-electrodes correspond to the positions of the third sub-electrodes one to one.
Optionally, the protrusion is of a truncated pyramid structure, and the four first sub-electrodes and the four third sub-electrodes are distributed below four corners of the protrusion.
According to a second aspect of the present application, there is provided a method for manufacturing a tactile pressure sensor, for manufacturing the tactile pressure sensor according to the first aspect, including:
manufacturing a contact layer mould, and manufacturing a contact layer according to the contact layer mould; preparing an intermediate medium layer by adopting PDMS mixed liquid, and respectively preparing a second electrode and a third electrode at the upper side and the lower side of the intermediate medium layer;
obtaining a dielectric layer silicon mold on a silicon chip through photoetching and anisotropic wet etching, and manufacturing an upper dielectric layer and a lower dielectric layer through the dielectric layer silicon mold by adopting PDMS mixed liquid;
manufacturing an upper electrode layer and a lower electrode layer, manufacturing a first electrode on the upper electrode layer, and manufacturing a fourth electrode on the lower electrode layer;
the contact layer, the upper electrode layer, the upper dielectric layer, the middle dielectric layer, the lower dielectric layer and the lower electrode layer are sequentially bonded together from bottom to top by adopting a silicon rubber or plasma method.
One technical effect of the invention is that:
in the embodiment of the application, the first electrode and the second electrode form a first flat capacitor, the second electrode and the third electrode form a second flat capacitor, the third electrode and the fourth electrode form a third flat capacitor, and the first flat capacitor, the second flat capacitor and the third flat capacitor are arranged in parallel, the tactile pressure sensor forms a plurality of layers of flat capacitors in parallel along the vertical direction, when the tactile pressure sensor is acted by an external force, the capacitance value of each flat capacitor is changed and read by an external circuit, and thus the same capacitance value as that of the tactile pressure sensor adopting a single-layer capacitor structure can be obtained in a smaller area, and the resolution of the tactile pressure sensor is obviously improved.
Drawings
Fig. 1 is a schematic cross-sectional view of a tactile pressure sensor according to an embodiment of the invention;
fig. 2 is a schematic structural diagram of a contact layer mold of a tactile pressure sensor according to an embodiment of the invention;
fig. 3 is a schematic structural diagram of a tactile pressure sensor according to an embodiment of the present invention, which is used for manufacturing a contact layer in a contact layer mold;
FIG. 4 is a schematic diagram of a tactile pressure sensor according to an embodiment of the present invention covering a glass plate on top of a contact layer;
fig. 5 is a schematic structural diagram of a contact layer of a tactile pressure sensor according to an embodiment of the invention;
FIG. 6 is a schematic structural diagram of a tactile pressure sensor according to an embodiment of the invention, in which a first dielectric silicon mold is used to fabricate an intermediate dielectric layer;
fig. 7 is a schematic structural diagram of an intermediate layer of a tactile pressure sensor according to an embodiment of the invention;
FIG. 8 is a schematic diagram of a second dielectric silicon mold of a tactile pressure sensor in accordance with one embodiment of the present invention;
fig. 9 is a schematic structural diagram of a tactile pressure sensor according to an embodiment of the present invention, in which a second dielectric silicon mold is used to fabricate an upper dielectric layer or a lower dielectric layer;
FIG. 10 is a schematic structural diagram of an upper or lower dielectric layer of a tactile pressure sensor according to an embodiment of the invention;
fig. 11 is a schematic structural diagram of an upper electrode layer and a first electrode of a tactile pressure sensor according to an embodiment of the invention;
FIG. 12 is a schematic structural diagram of a lower electrode layer and a fourth electrode of a tactile pressure sensor according to an embodiment of the invention;
fig. 13 is a schematic structural diagram of the second electrode, the intermediate layer, and the third electrode of a tactile pressure sensor according to an embodiment of the invention;
FIG. 14 is a schematic diagram of the relative positions of the first electrode and the second electrode of a tactile pressure sensor in accordance with an embodiment of the invention;
fig. 15 is a schematic diagram of relative positions of a third electrode and a fourth electrode of a tactile pressure sensor according to an embodiment of the invention.
In the figure: 1. a contact layer; 101. a protrusion; 2. an upper electrode layer; 3. a first electrode; 4. an upper dielectric layer; 5. a second electrode; 6. an intermediate layer; 7. a third electrode; 8. a lower dielectric layer; 9. a fourth electrode; 10. a lower electrode layer; 11. a first supporting unit; 12. a first deformation unit; 13. a second supporting unit; 14. a second deforming unit; 15. a contact layer mold; 16. a glass plate; 17. a first dielectric silicon mold; 18. and a second dielectric silicon mold.
Detailed Description
Various exemplary embodiments of the present application will now be described in detail with reference to the accompanying drawings. It should be noted that: the relative arrangement of the components and steps, the numerical expressions, and numerical values set forth in these embodiments do not limit the scope of the present application unless specifically stated otherwise.
Reference will now be made in detail to embodiments of the present application, examples of which are illustrated in the accompanying drawings, wherein like reference numerals refer to the same or similar elements or elements having the same or similar function throughout. The embodiments described below with reference to the drawings are exemplary only for the purpose of explaining the present application and are not to be construed as limiting the present application. All other embodiments obtained by a person of ordinary skill in the art based on the embodiments in the present application without making any creative effort belong to the protection scope of the present application.
The features of the terms first and second in the description and in the claims of the present application may explicitly or implicitly include one or more of such features. In the description of the present application, the meaning of "a plurality" is two or more unless otherwise specified. In addition, "and/or" in the specification and claims means at least one of connected objects, a character "/" generally means that a preceding and succeeding related objects are in an "or" relationship.
In the description of the present application, it is to be understood that the terms "central," "longitudinal," "lateral," "length," "width," "thickness," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," "clockwise," "counterclockwise," "axial," "radial," "circumferential," and the like are used in the orientations and positional relationships indicated in the drawings for convenience in describing the present application and to simplify the description, and are not intended to indicate or imply that the referenced devices or elements must have a particular orientation, be constructed and operated in a particular orientation, and are therefore not to be considered limiting of the present application.
In the description of the present application, it should be noted that, unless otherwise explicitly stated or limited, the terms "mounted," "connected," and "connected" are to be construed broadly, and may be, for example, a fixed connection, a detachable connection, or an integral connection; can be mechanically or electrically connected; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meaning of the above terms in the present application can be understood in a specific case by those of ordinary skill in the art.
Referring to fig. 1, according to a first aspect of the present application, there is provided a tactile pressure sensor for enabling accurate detection of an external force acting on the tactile pressure sensor.
Specifically, the tactile pressure sensor comprises a contact layer 1, an upper electrode layer 2, an upper dielectric layer 4, an intermediate dielectric layer 6, a lower dielectric layer 8 and a lower electrode layer 10, wherein the contact layer 1, the upper electrode layer 2, the upper dielectric layer 4, the intermediate dielectric layer 6, the lower dielectric layer 8 and the lower electrode layer 10 are sequentially stacked from top to bottom. Wherein the contact layer 1 serves as the position of action of the external force.
A first electrode 3 is arranged between the upper electrode layer 2 and the upper dielectric layer 4, a second electrode 5 is arranged between the upper dielectric layer 4 and the intermediate dielectric layer 6, a third electrode 7 is arranged between the intermediate dielectric layer 6 and the lower dielectric layer 8, and a fourth electrode 9 is arranged between the lower dielectric layer 8 and the lower electrode layer 10; the first electrode 3 and the third electrode 7 are short-circuited, the second electrode 5 and the fourth electrode 9 are short-circuited, the first electrode 3 and the second electrode 5 form a first flat capacitor, the second electrode 5 and the third electrode 7 form a second flat capacitor, the third electrode 7 and the fourth electrode 9 form a third flat capacitor, and the first flat capacitor, the second flat capacitor and the third flat capacitor are arranged in parallel.
The working principle of the tactile pressure sensor is as follows:
in the longitudinal direction, a first flat capacitor, a second flat capacitor and a third flat capacitor are connected in parallel to form a large-capacity capacitor, and in the plane, four independent large capacitors form a three-dimensional force detection unit. The surface of the contact layer 1 directly contacts with the acting force and transmits the acting force downwards, and the upper dielectric layer 4, the middle dielectric layer 6 and the lower dielectric layer 8 deform under the action of the force, so that the distances between the first electrode 3 and the second electrode 5, between the second electrode 5 and the third electrode 7 and between the third electrode 7 and the fourth electrode 9 change, and the capacitance value of each plate capacitor changes and is read out by an external circuit.
When the touch pressure sensor is subjected to normal force, the normal force is uniformly transmitted downwards through the contact layer 1, all dielectric layers deform in the same direction, and the distances between all electrodes change in the same direction, so that the capacitance values of all large capacitors also change in the same direction; when the touch pressure sensor is subjected to tangential force, the touch layer 1 can generate torque, one side of the touch pressure sensor is subjected to pressure action, the other side of the touch pressure sensor is subjected to tension action, and as a result, the thickness of each medium layer on one side subjected to the pressure action is reduced, namely, the electrode distance is reduced, the capacitance values of the two corresponding large capacitors are increased, the thickness of each medium layer on one side subjected to the tension action is increased, namely, the electrode distance is increased, and the capacitance values of the two corresponding large capacitors are reduced. Therefore, the three-dimensional force can be detected by analyzing the capacitance value change of each large capacitor, and the acting force applied to the touch pressure sensor can be measured.
It should be noted that, the tactile pressure sensor serves as a detection unit, and when an external force is measured, a plurality of detection units can be commonly arranged on a force-bearing surface with a preset size, so as to accurately detect the external force. When the area of one detection unit is small, more detection units can be arranged on the force-bearing surface with a preset size, so that the resolution of the tactile pressure sensor is improved.
In the embodiment of the application, the first electrode 3 and the second electrode 5 form a first flat capacitor, the second electrode 5 and the third electrode 7 form a second flat capacitor, the third electrode 7 and the fourth electrode 9 form a third flat capacitor, and the first flat capacitor, the second flat capacitor and the third flat capacitor are arranged in parallel, the tactile pressure sensor forms a plurality of flat capacitors in the vertical direction and are connected in parallel, when the tactile pressure sensor is acted by an external force, the capacitance value of each flat capacitor is changed and read by an external circuit, and thus the same capacitance value can be obtained on a smaller area of the tactile pressure sensor, and the resolution of the tactile pressure sensor is obviously improved.
Optionally, the middle of the contact layer 1 is provided with a protrusion 101 extending away from the upper electrode layer 2. This allows an external force to act directly on the protrusions 101 of the contact layer 1, thereby facilitating better detection of the external force.
Optionally, the protrusion 101 is a hemisphere, a cylinder, or a frustum of a prism. This enables an external force acting on the contact layer 1 to act directly on the protrusion 101, enabling sensing of the external force to be achieved well.
Optionally, a first supporting unit 11 and a first deformation unit 12 are arranged on one side of the upper dielectric layer 4 facing the upper electrode layer 2;
the position of the first supporting unit 11 corresponds to the position of the protrusion 101 of the contact layer 1, and the first deformation unit 12 is annularly arranged around the first supporting unit 11.
In the above embodiment, the first deformation unit 12 which is easy to deform and the first support unit 11 which can provide a relatively large rigidity are respectively arranged on the upper dielectric layer 4, so that not only can the rigidity of the tactile pressure sensor be better ensured, but also the deformability of the dielectric layer can be improved, and thus the sensitivity and the measuring range of the tactile pressure sensor can be better considered.
Optionally, a part of the first supporting unit 11 is located below the middle of the protrusion 101; part of the first supporting units 11 are located at the edge of the upper dielectric layer 4. Therefore, the first support unit 11 can better support the upper electrode layer 2 without influencing the deformation of the upper dielectric layer 4, thereby effectively ensuring the rigidity of the tactile pressure sensor and improving the measuring range of the tactile pressure sensor.
Optionally, the first supporting unit 11 is a truncated pyramid structure, the top surface of the truncated pyramid structure is connected to the upper electrode layer 2, and the bottom surface of the truncated pyramid structure is connected to the upper dielectric layer 4;
the first deformation unit 12 comprises a plurality of pyramid structures arranged at intervals, the tip portions of the pyramid structures are connected with the first electrode 3 layer, and the bottom portions of the pyramid structures are connected with the upper dielectric layer 4.
In the above embodiment, the first supporting unit 11 of the frustum structure can better support the tactile pressure sensor, and the first deformation unit 12 formed by the pyramid structures arranged at intervals can better exert the deformation function, so that the first flat capacitor structure can generate the change of the capacitance value due to the change of the external force, thereby being helpful for the tactile pressure sensor to accurately detect the external force acting on the protrusion 101.
Furthermore, the tactile pressure sensor adopts a dielectric layer design combining a pyramid structure and a pyramid structure, the pyramid structure is adopted in the area opposite to the electrode to improve the deformation capacity of the dielectric layer, and the quadrangular pyramid structure is adopted in the non-electrode area to improve the mechanical strength of the tactile pressure sensor, so that the sensitivity and the measuring range of the tactile pressure sensor can be considered.
Optionally, a second supporting unit 13 and a second deforming unit 14 are arranged on one side of the lower medium layer 8 facing the medium layer 6;
the position of the second supporting unit 13 corresponds to the position of the first supporting unit 11, the position of the second deformation unit 14 corresponds to the position of the first deformation unit 12, the shape and size of the second supporting unit 13 are the same as those of the first supporting unit 11, and the shape and size of the first deformation unit 12 are the same as those of the second deformation unit 14.
In the above embodiment, the second supporting unit 13 of the prism structure can further provide a good supporting effect for the tactile pressure sensor, and the second deforming unit 14 formed by a plurality of pyramid structures arranged at intervals can provide a good deforming effect, so that the third flat capacitor structure can generate a change in capacitance value due to a change in external force, thereby facilitating the tactile pressure sensor to accurately detect the external force acting on the protrusion 101.
Optionally, the first electrode 3 includes four first sub-electrodes sequentially connected in series, the four first sub-electrodes are distributed in a matrix, and the bottom of each first sub-electrode is connected to the tip of the pyramid structure;
the third electrode 7 comprises four third sub-electrodes which are sequentially connected in series, the four third sub-electrodes are distributed in a matrix manner, and the bottom of each third sub-electrode is connected with the tip of the pyramid structure;
the positions of the first sub-electrodes correspond to the positions of the third sub-electrodes one to one.
In the above embodiment, the four first sub-electrodes constitute the first electrode 3 in one plane, and further, the four first sub-electrodes and the second electrode 5 constitute the four plate capacitors, and the three-dimensional force detection can be realized by analyzing the change in capacitance values of the four plate capacitors. The three-dimensional force detection unit is expanded on a plane, so that a three-dimensional force detection array is obtained, and the acting force applied to the touch pressure sensor can be accurately measured.
Referring to fig. 14 and 15, the second electrode 5 includes four second sub-electrodes connected in series in sequence, and the positions of the second sub-electrodes correspond to the positions of the first sub-electrodes one by one; the fourth electrode 9 includes four sequentially connected fourth sub-electrodes, and the positions of the fourth sub-electrodes correspond to the positions of the third sub-electrodes one to one. That is, there are four capacitor structures in one plane, and thus, the tactile pressure sensor has three layers of plate capacitors in total. The first flat capacitor, the second flat capacitor and the third flat capacitor are connected in parallel through the short circuit of the first electrode 3 and the third electrode 7 and the short circuit of the second electrode 5 and the fourth electrode 9, so that the external force acting on the touch pressure sensor can be accurately detected.
Optionally, the protrusion 101 is of a quadrangular frustum pyramid structure, and the four first sub-electrodes and the four third sub-electrodes are distributed below four corners of the protrusion 101.
In the above embodiment, since the protrusion 101 has a truncated pyramid structure, and the protrusion 101 of the truncated pyramid structure is more sensitive to the tangential force, and can transmit the external force to the lower structures such as the upper electrode layer 2 and the upper dielectric layer 4 more accurately, it is helpful to realize that the tactile pressure sensor can accurately measure the external force acting on the protrusion 101. Furthermore, because the deformation of the dielectric layer caused by the four corners of the protrusion 101 is more obvious under the action of external force, the first sub-electrodes and the third sub-electrodes distributed below the four corners of the protrusion 101 can better move downwards under the action of external force, so that the change of capacitance values on each flat capacitor is realized, and the external force acting on the tactile pressure sensor is detected.
In a specific embodiment, the contact layer 1 is made of PDMS (polydimethylsiloxane), and has a thickness of 100-1000 μm, which is beneficial to enabling an external force transmitted to the dielectric layer to well cause deformation of the dielectric layer through the contact layer 1, so that capacitance values of the respective plate capacitors are changed, and the external force acting on the tactile pressure sensor is favorably detected.
The material of the upper electrode layer 2 and the lower electrode layer 10 is either PET (polyethylene terephthalate) or PI (polyimide), preferably PI, with a thickness of 20-200 μm. Not only is the upper electrode layer 2 and the lower electrode layer 10 convenient to prepare, but also the upper electrode layer 2 and the lower electrode layer 10 can be ensured to have relatively stable functions.
The upper dielectric layer 4, the middle dielectric layer 6 and the lower dielectric layer 8 are made of PDMS with the thickness of 100-500 μm. This is advantageous for optimizing the processing steps of the upper dielectric layer 4, the intermediate dielectric layer 6, and the lower dielectric layer 8, and ensures that the upper dielectric layer 4, the intermediate dielectric layer 6, and the lower dielectric layer 8 have good performance.
The number of the first electrode 3, the second electrode 5, the third electrode 7 and the fourth electrode 9 may be one or several, and the material may be Cu (copper), pt (platinum), ag (silver), au (gold), and the like, preferably Au, and the thickness is 100 to 400nm.
Referring to fig. 2 to 13, according to a second aspect of the present application, there is provided a method for manufacturing a tactile pressure sensor, including:
and manufacturing a contact layer mould 15, and manufacturing the contact layer 1 according to the contact layer mould 15.
For example, first, the contact layer mold 15 is fabricated by a 3D printing technique or a conventional microfabrication technique, see fig. 2. Then, uniformly mixing the PDMS resin and the curing agent in a mass ratio of 5.
The intermediate layer 6 is made of a PDMS mixture, for example, a silicon wafer with a [100] crystal orientation is selected as the first dielectric silicon mold 17, the PDMS mixture is configured, and the intermediate layer 6 is obtained on the first dielectric silicon mold 17 through the steps of glue homogenizing, defoaming, curing, mold stripping, and the like, as shown in fig. 6 and 7. The second electrode 5 and the third electrode 7 are formed on the upper and lower sides of the intermediate layer 6, respectively. For example, cr having a thickness of 20nm and Au having a thickness of 160nm are prepared as the second electrode 5 and the third electrode 7 on the upper and lower sides of the intermediate layer 6 by photolithography and measurement sputtering, respectively, see fig. 13.
And (3) obtaining a second dielectric layer silicon mold 18 on the silicon wafer with the crystal orientation of [100] through photoetching and anisotropic wet etching, and manufacturing an upper dielectric layer 4 and a lower dielectric layer 8 through the second dielectric layer silicon mold 18 by adopting PDMS mixed liquid. For example, a PDMS mixed solution is prepared, and the upper dielectric layer 4 and the lower dielectric layer 8 are obtained through the steps of glue homogenizing, defoaming, curing, mold stripping, and the like, as shown in fig. 8 to 10.
An upper electrode layer 2 and a lower electrode layer 10 are produced, and a first electrode 3 is produced on the upper electrode layer 2 and a fourth electrode 9 is produced on the lower electrode layer 10.
For example, two layers of PI (polyimide) are selected as the upper electrode layer 2 and the lower electrode layer 10, and Cr having a thickness of 20nm and Au having a thickness of 160nm are prepared as the first electrode 3 and the fourth electrode 9 on the upper electrode layer 2 and the lower electrode layer 10, respectively, by photolithography and magnetron sputtering, see fig. 11 and 12.
The contact layer 1, the upper electrode layer 2, the upper dielectric layer 4, the intermediate dielectric layer 6, the lower dielectric layer 8 and the lower electrode layer 10 are bonded together in turn from bottom to top by adopting a silicon rubber or plasma method.
In the above embodiment, the preparation method of the tactile pressure sensor is reasonably designed, so as to facilitate the rapid preparation of the tactile pressure sensor. The touch pressure sensor is prepared by adopting a flexible electronic technology, so that the touch pressure sensor has the advantages of lightness, thinness, portability, wearability, easiness in batch manufacturing and low cost.
It will be understood that the above embodiments are merely exemplary embodiments taken to illustrate the principles of the present invention, which is not limited thereto. It will be apparent to those skilled in the art that various modifications and improvements can be made without departing from the spirit and substance of the invention, and these modifications and improvements are also considered to be within the scope of the invention.
Claims (10)
1. A touch pressure sensor is characterized by comprising a contact layer, an upper electrode layer, an upper dielectric layer, an intermediate dielectric layer, a lower dielectric layer and a lower electrode layer, wherein the contact layer, the upper electrode layer, the upper dielectric layer, the intermediate dielectric layer, the lower dielectric layer and the lower electrode layer are sequentially overlapped from top to bottom;
a first electrode is arranged between the upper electrode layer and the upper dielectric layer, a second electrode is arranged between the upper dielectric layer and the middle dielectric layer, a third electrode is arranged between the middle dielectric layer and the lower dielectric layer, and a fourth electrode is arranged between the lower dielectric layer and the lower electrode layer; the first electrode and the third electrode are in short circuit, the second electrode and the fourth electrode are in short circuit, the first electrode and the second electrode form a first flat capacitor, the second electrode and the third electrode form a second flat capacitor, the third electrode and the fourth electrode form a third flat capacitor, and the first flat capacitor, the second flat capacitor and the third flat capacitor are arranged in parallel.
2. A tactile pressure sensor according to claim 1, wherein the middle portion of the contact layer is provided with a projection extending away from the upper electrode layer.
3. A tactile pressure sensor according to claim 2, wherein said protrusions have a hemispherical structure, a cylindrical structure or a truncated pyramid structure.
4. A tactile pressure sensor according to claim 3, wherein a first supporting unit and a first deformation unit are provided on a side of the upper dielectric layer facing the upper electrode layer;
the position of the first supporting unit corresponds to the position of the protrusion of the contact layer, and the first deformation unit is annularly arranged around the first supporting unit.
5. A tactile pressure sensor according to claim 4, wherein a part of the first supporting unit is located below a middle portion of the projection; and part of the first supporting units are positioned at the edge part of the upper dielectric layer.
6. A tactile pressure sensor according to claim 5, wherein the first support unit is a prismatic table structure, the top surface of the prismatic table structure is connected with the upper electrode layer, and the bottom surface of the prismatic table structure is connected with the upper dielectric layer;
the first deformation unit comprises a plurality of pyramid structures arranged at intervals, the tip parts of the pyramid structures are connected with the first electrode layer, and the bottom parts of the pyramid structures are connected with the upper dielectric layer.
7. The tactile pressure sensor according to claim 6, wherein a side of the lower dielectric layer facing the intermediate dielectric layer is provided with a second supporting unit and a second deforming unit;
the position of the second supporting unit corresponds to that of the first supporting unit, the position of the second deformation unit corresponds to that of the first deformation unit, the shape and the size of the second supporting unit are the same as those of the first supporting unit, and the shape and the size of the first deformation unit are the same as those of the second deformation unit.
8. A tactile pressure sensor according to claim 7, wherein the first electrode comprises four first sub-electrodes connected in series in sequence, the four first sub-electrodes are distributed in a matrix, and the bottom of each first sub-electrode is connected with the tip of the pyramid structure;
the third electrode comprises four third sub-electrodes which are sequentially connected in series, the four third sub-electrodes are distributed in a matrix manner, and the bottom of each third sub-electrode is connected with the tip of the pyramid structure;
the positions of the first sub-electrodes correspond to the positions of the third sub-electrodes one to one.
9. A tactile pressure sensor according to claim 8,
the protrusion is of a quadrangular frustum pyramid structure, and the four first sub-electrodes and the four third sub-electrodes are distributed below four corners of the protrusion.
10. A method for manufacturing a tactile pressure sensor according to any one of claims 1 to 9, comprising:
manufacturing a contact layer mold, and manufacturing a contact layer according to the contact layer mold; preparing an intermediate medium layer by adopting PDMS mixed liquid, and respectively preparing a second electrode and a third electrode at the upper side and the lower side of the intermediate medium layer;
obtaining a dielectric layer silicon mold on a silicon chip through photoetching and anisotropic wet etching, and manufacturing an upper dielectric layer and a lower dielectric layer through the dielectric layer silicon mold by adopting PDMS mixed liquid;
manufacturing an upper electrode layer and a lower electrode layer, manufacturing a first electrode on the upper electrode layer, and manufacturing a fourth electrode on the lower electrode layer;
the contact layer, the upper electrode layer, the upper dielectric layer, the middle dielectric layer, the lower dielectric layer and the lower electrode layer are sequentially bonded together from bottom to top by adopting a silicon rubber or plasma method.
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