CN113023662A - MEMS capacitive touch pressure sensor and preparation method thereof - Google Patents
MEMS capacitive touch pressure sensor and preparation method thereof Download PDFInfo
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- CN113023662A CN113023662A CN202110178432.1A CN202110178432A CN113023662A CN 113023662 A CN113023662 A CN 113023662A CN 202110178432 A CN202110178432 A CN 202110178432A CN 113023662 A CN113023662 A CN 113023662A
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- 238000002360 preparation method Methods 0.000 title claims abstract description 8
- 239000000758 substrate Substances 0.000 claims abstract description 26
- 239000002131 composite material Substances 0.000 claims description 11
- 239000000463 material Substances 0.000 claims description 9
- 239000004205 dimethyl polysiloxane Substances 0.000 claims description 8
- 235000013870 dimethyl polysiloxane Nutrition 0.000 claims description 8
- 229920000435 poly(dimethylsiloxane) Polymers 0.000 claims description 8
- 238000000034 method Methods 0.000 claims description 5
- 229920001609 Poly(3,4-ethylenedioxythiophene) Polymers 0.000 claims description 4
- 238000004519 manufacturing process Methods 0.000 claims description 4
- 229920000144 PEDOT:PSS Polymers 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- 238000005530 etching Methods 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 2
- CXQXSVUQTKDNFP-UHFFFAOYSA-N octamethyltrisiloxane Chemical compound C[Si](C)(C)O[Si](C)(C)O[Si](C)(C)C CXQXSVUQTKDNFP-UHFFFAOYSA-N 0.000 claims 2
- 238000004987 plasma desorption mass spectroscopy Methods 0.000 claims 2
- 230000008859 change Effects 0.000 abstract description 21
- 230000008901 benefit Effects 0.000 abstract description 8
- 230000035945 sensitivity Effects 0.000 abstract description 7
- 238000005516 engineering process Methods 0.000 abstract description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 229910052581 Si3N4 Inorganic materials 0.000 description 4
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 4
- 229920001467 poly(styrenesulfonates) Polymers 0.000 description 3
- 235000012239 silicon dioxide Nutrition 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- -1 Polydimethylsiloxane Polymers 0.000 description 2
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- 230000004048 modification Effects 0.000 description 2
- 229920000139 polyethylene terephthalate Polymers 0.000 description 2
- 239000005020 polyethylene terephthalate Substances 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 238000010923 batch production Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
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- 229910052737 gold Inorganic materials 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
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- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 235000001968 nicotinic acid Nutrition 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
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- 238000002207 thermal evaporation Methods 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/02—Microstructural systems; Auxiliary parts of microstructural devices or systems containing distinct electrical or optical devices of particular relevance for their function, e.g. microelectro-mechanical systems [MEMS]
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00134—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems comprising flexible or deformable structures
- B81C1/00166—Electrodes
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00349—Creating layers of material on a substrate
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L1/00—Measuring force or stress, in general
- G01L1/14—Measuring force or stress, in general by measuring variations in capacitance or inductance of electrical elements, e.g. by measuring variations of frequency of electrical oscillators
- G01L1/142—Measuring force or stress, in general by measuring variations in capacitance or inductance of electrical elements, e.g. by measuring variations of frequency of electrical oscillators using capacitors
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2201/00—Specific applications of microelectromechanical systems
- B81B2201/02—Sensors
- B81B2201/0264—Pressure sensors
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- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Measuring Fluid Pressure (AREA)
- Pressure Sensors (AREA)
Abstract
The invention provides a MEMS capacitive touch pressure sensor, which comprises: a substrate; an insulating layer disposed on the substrate; an electrode disposed on the insulating layer; a dielectric layer disposed on the insulating layer and covering the electrode; a touch sensitive body disposed on the dielectric layer; wherein the touch sensitive body constitutes a movable electrode of the MEMS capacitive touch pressure sensor. The MEMS capacitive touch pressure sensor provided by the invention mainly responds to the change of touch pressure by depending on the area change between the capacitance electrodes, and has the advantages of high linearity and high sensitivity compared with the existing MEMS touch pressure sensor which responds to the change of touch pressure by the change of the electrode distance. And the MEMS processing technology can be adopted to carry out the preparation with high precision, high consistency, low cost, batch and miniaturization.
Description
Technical Field
The invention relates to the field of Micro Electro Mechanical Systems (MEMS), in particular to an MEMS capacitive touch pressure sensor and a preparation method thereof.
Background
The touch pressure sensor is a sensor for simulating the human touch function of the robot, is one of the most basic components in the field of bionics, and has wide application prospect in the fields of robots, human-computer interaction and the like. The MEMS tactile pressure sensor has the advantages of high sensitivity, high reliability, high precision, miniaturization, low cost and the like, and has wide development prospect due to the characteristics of miniaturization, high precision, batch production and the like of the MEMS technology. Common MEMS tactile pressure sensors include MEMS piezoresistive tactile pressure sensors and capacitive MEMS tactile pressure sensors, among others. The MEMS piezoresistive tactile pressure sensor has the advantage of high linearity, but its environmental adaptability is poor because the piezoresistive coefficient and resistivity are susceptible to temperature. The common MEMS capacitive touch pressure sensor has the advantages of being slightly influenced by ambient temperature, but has the defects of low sensitivity, poor linearity and the like, and causes higher difficulty in designing a corresponding interface circuit.
Disclosure of Invention
In order to solve some problems of the touch pressure sensor in the field, the invention provides an MEMS capacitive touch pressure sensor and a preparation method thereof.
Specifically, the technical scheme provided by the invention is as follows:
a MEMS capacitive tactile pressure sensor, comprising:
a substrate;
an insulating layer disposed on the substrate;
an electrode disposed on the insulating layer;
a dielectric layer disposed on the insulating layer and covering the electrode;
a touch sensitive body disposed on the dielectric layer;
wherein the touch sensitive body constitutes a movable electrode of the MEMS capacitive touch pressure sensor.
Further, the lower surface of the touch sensitive body in contact with the dielectric layer is arc-shaped.
Further, the material of the touch sensitive body is an elastic conductive composite material.
Furthermore, the material of the touch sensitive body is PEDOT PSS/PDMS.
Further, the touch sensitive body is arranged opposite to the electrode.
Further, the touch sensitive body has a height of 1 μm to 100 μm.
Correspondingly, the invention also provides a preparation method of the MEMS capacitive touch pressure sensor, which comprises the following steps:
the substrate is selected such that,
forming an insulating layer on the substrate;
forming an electrode on the insulating layer;
forming a dielectric layer on the substrate, the dielectric layer covering the electrode;
forming a sacrificial layer on the dielectric layer;
etching the sacrificial layer to form the shape of the touch sensitive body;
forming an elastic conductive composite material on the upper surface of the sacrificial layer;
and removing the sacrificial layer to release the touch sensitive body.
Further, the shape of the touch sensitive body is an arc.
Further, the sacrificial layer is an aluminum sacrificial layer.
Further, the elastic conductive composite material is PEDOT: PSS/PDMS.
1. The MEMS capacitive touch pressure sensor disclosed by the invention mainly responds to the change of touch pressure by depending on the area change between the capacitive electrodes, and has the advantage of high linearity compared with the existing MEMS touch pressure sensor which responds to the change of touch pressure by changing the electrode spacing.
2. In addition, for the existing MEMS tactile pressure sensor which responds to the change of tactile pressure through the change of the electrode spacing, in order to prevent the capacitive electrode from contacting due to the tactile pressure and the sensor overload problem caused thereby, the capacitive electrode always keeps a larger spacing, which causes the problems of the existing sensor that the initial capacitance is smaller and the sensitivity is lower; for the MEMS capacitive touch pressure sensor, the change of the area between the capacitive electrodes is mainly relied on to respond the change of the touch pressure, and the distance between the capacitive electrodes can be kept small, which is beneficial to improving the initial capacitance and the sensitivity of the sensor.
3. The MEMS capacitive touch pressure sensor can be prepared in a high-precision, high-consistency, low-cost, mass and miniature manner by adopting an MEMS processing technology.
Drawings
Fig. 1 is a schematic cross-sectional view of a MEMS tactile pressure sensor according to an embodiment of the invention.
FIG. 2 illustrates a method for fabricating a MEMS tactile pressure sensor according to one embodiment of the present invention; wherein: 1 is a touch sensitive body, 2 is a dielectric layer, 3 is an electrode, 4 is an insulating layer, and 5 is a substrate.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention more apparent, embodiments of the present invention will be described in detail below with reference to the accompanying drawings. However, it will be appreciated by those of ordinary skill in the art that numerous technical details are set forth in order to provide a better understanding of the present application in various embodiments of the present invention. However, the technical solution claimed in the present application can be implemented without these technical details and various changes and modifications based on the following embodiments. The following embodiments are divided for convenience of description, and should not constitute any limitation to the specific implementation manner of the present invention, and the embodiments may be mutually incorporated and referred to without contradiction.
Example 1
Referring to fig. 1, the present invention proposes a MEMS capacitive tactile pressure sensor comprising: a substrate 5; an insulating layer 4, the insulating layer 4 being disposed on the substrate 5; an electrode 3, the electrode 3 being disposed on the insulating layer 4; a dielectric layer 2, the dielectric layer 2 being disposed on the insulating layer 4 and covering the electrode 3; a touch sensitive body 1, the touch sensitive body 1 being disposed on the dielectric layer 2; wherein the touch sensitive body 1 constitutes a movable electrode of the MEMS capacitive touch pressure sensor.
Further, the substrate 5 is a rigid substrate or a flexible substrate, and includes one or more of silicon wafer, glass, stainless steel, polyimide, Polydimethylsiloxane (PDMS), and polyethylene terephthalate (PET), and the thickness is 20 μm to 5000 μm.
Further, the insulating layer 4 is disposed on the upper surface of the substrate 5, and the material of the insulating layer 4 is, for example, at least one of silicon dioxide or silicon nitride, and the thickness is 100nm to 1000 nm; the insulating layer 4 serves to electrically isolate the electrode 3 from the substrate 5.
Further, the electrode 3 is arranged on the upper surface of the insulating layer 4, the material of the electrode 3 is metal, preferably at least one of Al, Ti, Au, Cu and Pt, and the thickness is 50nm-500 nm; the electrode 3 serves as a fixed electrode of the MEMS capacitive tactile pressure sensor.
Further, the dielectric layer 2 is arranged on the upper surface of the insulating layer 4 and covers the electrode 3, the material of the dielectric layer 2 is at least one of silicon dioxide or silicon nitride, and the thickness is 50nm-500 nm; the dielectric layer 2 serves as a dielectric layer of the MEMS capacitive tactile pressure sensor.
Further, the lower surface (i.e. the surface contacting with the dielectric layer 2) of the touch sensitive body 1 is arc-shaped, and the height is 1 μm-100 μm; the width of the touch sensitive body 1 is determined by the measuring range and the resolution required by the sensor, the larger the width is, the larger the measuring range of the sensor is, but on the other hand, the larger the width is, the lower the resolution of the sensor is; the touch sensitive body 1 is arranged on the upper surface of the dielectric layer 2 and is opposite to the lower electrode 3; the material of the touch sensitive body 1 is an elastic conductive composite material, preferably PEDOT: PSS (poly (3, 4-ethylenedioxythiophene): poly (styrenesulfonate))/PDMS; the tactile sensitive body 1 constitutes a movable electrode of a MEMS capacitive tactile pressure sensor.
The working principle of the MEMS capacitive touch pressure sensor provided by the invention is as follows:
the touch sensitive body 1, the dielectric layer 2 and the electrode 3 form a sensitive capacitor of the MEMS capacitive touch pressure sensor. Under the action of the tactile pressure, the tactile sensitive body 1 deforms, so that the contact area between the tactile sensitive body 1 and the dielectric layer 2 is increased, the effective relative area between a movable electrode and a fixed electrode of the sensitive capacitor is increased, and the capacitance value is changed. The larger the tactile pressure is, the larger the deformation amount of the tactile sensitive body 1 is, the larger the contact area with the dielectric layer 2 is, the larger the effective areas of the two electrodes are, and the corresponding capacitance values are, so that the conversion from the tactile pressure to the electric signal is realized. From the above, the MEMS capacitive tactile pressure sensor of the present invention mainly responds to the change of tactile pressure by the change of the relative area between the capacitive electrodes, and has high linearity because the capacitance value is proportional to the relative area between the electrodes.
Example 2
Referring to fig. 2, the present invention further provides a method for manufacturing a MEMS tactile pressure sensor, including the following steps:
s1: the substrate is selected such that,
s2: forming an insulating layer on the substrate;
s3: forming an electrode on the insulating layer;
s4: forming a dielectric layer on the substrate, the dielectric layer covering the electrode;
s5: forming a sacrificial layer on the dielectric layer;
s6: etching the sacrificial layer to form the shape of the touch sensitive body;
s7: forming an elastic conductive composite material on the upper surface of the sacrificial layer;
s8: and removing the sacrificial layer to release the touch sensitive body.
Wherein, specifically:
selecting a substrate, for example, a 300 μm thick N-type (100) monocrystalline silicon wafer as the substrate 5, and forming silicon dioxide of about 200nm as the insulating layer 4 on the upper surface of the substrate 5 by Plasma Enhanced Chemical Vapor Deposition (PECVD); of course, the material of the insulating layer 4 may also include other materials suitable in the art, such as silicon nitride.
An electrode of about 200nm thickness is prepared by electron beam evaporation and lift-off techniques on the upper surface of the insulating layer 4, for example using Pt.
Forming silicon nitride as the dielectric layer 2 of about 50nm on the upper surface of the insulating layer 4, for example, using a Plasma Enhanced Chemical Vapor Deposition (PECVD) technique;
on the upper surface of the dielectric layer 2, a sacrificial layer of, for example, Al is formed by thermal evaporation to a thickness of about 1 μm by photolithography and H3PO4Carrying out solution isotropic wet etching to form a shape required by the touch sensitive body 1 in the Al sacrificial layer; for example in the shape of an arc.
Forming an elastic conductive composite material on the upper surface of the Al sacrificial layer by spin coating and heating and drying, wherein the elastic conductive composite material is PEDOT, PSS/PDMS;
using H3PO4And selectively removing the Al sacrificial layer and the elastic conductive composite material attached above the Al sacrificial layer by using the solution to form the touch sensitive body 1 and finally finishing the preparation of the device.
Compared with the prior art, the invention has the following advantages:
1. the MEMS capacitive touch pressure sensor provided by the invention mainly responds to the change of touch pressure by depending on the area change between the capacitance electrodes, and has the advantage of high linearity compared with the existing MEMS touch pressure sensor which responds to the change of touch pressure by the change of the electrode distance.
2. In addition, for the existing MEMS tactile pressure sensor which responds to the change of tactile pressure through the change of the electrode spacing, in order to prevent the capacitive electrode from contacting due to the tactile pressure and the sensor overload problem caused thereby, the capacitive electrode always keeps a larger spacing, which causes the problems of the existing sensor that the initial capacitance is smaller and the sensitivity is lower; for the MEMS capacitive touch pressure sensor, the change of the area between the capacitive electrodes is mainly relied on to respond the change of the touch pressure, and the distance between the capacitive electrodes can be kept small, which is beneficial to improving the initial capacitance and the sensitivity of the sensor.
3. The MEMS capacitive touch pressure sensor provided by the invention can be prepared in a high-precision, high-consistency, low-cost, batch and miniature manner by adopting an MEMS processing technology.
The above description is only a preferred embodiment of the present invention, and the scope of the present invention is not limited to the above embodiment, but equivalent modifications or changes made by those skilled in the art according to the present disclosure should be included in the scope of the present invention as set forth in the appended claims.
Claims (9)
1. A MEMS capacitive tactile pressure sensor, comprising:
a substrate;
an insulating layer disposed on the substrate;
an electrode disposed on the insulating layer;
a dielectric layer disposed on the insulating layer and covering the electrode;
a touch sensitive body disposed on the dielectric layer;
wherein the touch sensitive body constitutes a movable electrode of the MEMS capacitive touch pressure sensor; wherein the lower surface of the touch sensitive body, which is in contact with the dielectric layer, is arc-shaped; the touch sensitive body is made of an elastic conductive composite material.
2. The MEMS capacitive tactile pressure sensor according to claim 1, wherein the material of the tactile sensitive body is PEDOT PSS/PDMS.
3. The MEMS capacitive tactile pressure sensor of claim 1, wherein the tactile sensitive body is disposed directly opposite the electrode.
4. The MEMS capacitive tactile pressure sensor according to claim 1, characterized in that the tactile sensitive body has a height of 1-100 μ ι η.
5. A preparation method of a MEMS capacitive touch pressure sensor is characterized by comprising the following steps:
the substrate is selected such that,
forming an insulating layer on the substrate;
forming an electrode on the insulating layer;
forming a dielectric layer on the substrate, the dielectric layer covering the electrode;
forming a sacrificial layer on the dielectric layer;
etching the sacrificial layer to form the shape of a touch sensitive body, wherein the shape of the touch sensitive body is arc-shaped;
forming an elastic conductive composite material on the upper surface of the sacrificial layer;
and removing the sacrificial layer to release the touch sensitive body.
6. The method of making a MEMS capacitive tactile pressure sensor of claim 5 wherein the sacrificial layer is a sacrificial layer of aluminum.
7. The method for preparing a MEMS capacitive tactile pressure sensor according to claim 5, wherein the elastic conductive composite material is PEDOT: PSS/PDMS.
8. The method of making a MEMS capacitive tactile pressure sensor of claim 5 wherein the tactile sensitive body is disposed directly opposite the electrode.
9. The method of making a MEMS capacitive tactile pressure sensor of claim 5 wherein the tactile sensitive body has a height of 1 μm to 100 μm.
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| CN202110178432.1A CN113023662A (en) | 2021-02-09 | 2021-02-09 | MEMS capacitive touch pressure sensor and preparation method thereof |
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Cited By (2)
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| CN116659711A (en) * | 2023-07-28 | 2023-08-29 | 苏州敏芯微电子技术股份有限公司 | MEMS pressure sensor and electronic equipment |
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