CN115485827A - 具有共享电极的集成晶体管 - Google Patents

具有共享电极的集成晶体管 Download PDF

Info

Publication number
CN115485827A
CN115485827A CN202180025147.4A CN202180025147A CN115485827A CN 115485827 A CN115485827 A CN 115485827A CN 202180025147 A CN202180025147 A CN 202180025147A CN 115485827 A CN115485827 A CN 115485827A
Authority
CN
China
Prior art keywords
transistor
gate
semiconductor device
integrated semiconductor
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202180025147.4A
Other languages
English (en)
Chinese (zh)
Inventor
沙米特·桑恩
约翰·史提芬·阿瑟顿
韦恩·麦克·斯特鲁布尔
杰森·马修·巴雷特
尼桑特·R·亚木加拉
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Malcolm Technology Solutions Holdings Ltd
Original Assignee
Malcolm Technology Solutions Holdings Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Malcolm Technology Solutions Holdings Ltd filed Critical Malcolm Technology Solutions Holdings Ltd
Publication of CN115485827A publication Critical patent/CN115485827A/zh
Pending legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/40—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00 with at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of IGFETs with BJTs
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
    • H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
    • H03F1/0288—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers using a main and one or several auxiliary peaking amplifiers whereby the load is connected to the main amplifier using an impedance inverter, e.g. Doherty amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H03F3/195—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only in integrated circuits
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H10D62/8325—Silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H10D62/8503—Nitride Group III-V materials, e.g. AlN or GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/251—Source or drain electrodes for field-effect devices
    • H10D64/254—Source or drain electrodes for field-effect devices for lateral devices wherein the source or drain electrodes extend entirely through the semiconductor bodies, e.g. via-holes for back side contacts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/251—Source or drain electrodes for field-effect devices
    • H10D64/257—Source or drain electrodes for field-effect devices for lateral devices wherein the source or drain electrodes are characterised by top-view geometrical layouts, e.g. interdigitated, semi-circular, annular or L-shaped electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0149—Manufacturing their interconnections or electrodes, e.g. source or drain electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/10—Integrated device layouts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/20—Interconnections within wafers or substrates, e.g. through-silicon vias [TSV]
    • H10W20/211—Through-semiconductor vias, e.g. TSVs
    • H10W20/212—Top-view shapes or dispositions, e.g. top-view layouts of the vias
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/20—Interconnections within wafers or substrates, e.g. through-silicon vias [TSV]
    • H10W20/211—Through-semiconductor vias, e.g. TSVs
    • H10W20/212—Top-view shapes or dispositions, e.g. top-view layouts of the vias
    • H10W20/2125—Top-view shapes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/41—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
    • H10W20/42—Vias, e.g. via plugs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/41—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
    • H10W20/427—Power or ground buses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/482—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes for individual devices provided for in groups H10D8/00 - H10D48/00, e.g. for power transistors
    • H10W20/484—Interconnections having extended contours, e.g. pads having mesh shape or interconnections comprising connected parallel stripes
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/451—Indexing scheme relating to amplifiers the amplifier being a radio frequency amplifier
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having two-dimensional [2D] charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/05—Manufacture or treatment characterised by using material-based technologies using Group III-V technology
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/20—Interconnections within wafers or substrates, e.g. through-silicon vias [TSV]

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Amplifiers (AREA)
CN202180025147.4A 2020-06-17 2021-04-23 具有共享电极的集成晶体管 Pending CN115485827A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US16/903,961 US11417644B2 (en) 2020-06-17 2020-06-17 Integration of multiple discrete GaN devices
US16/903,961 2020-06-17
PCT/US2021/028740 WO2021257180A1 (en) 2020-06-17 2021-04-23 Integrated transistors with shared electrode

Publications (1)

Publication Number Publication Date
CN115485827A true CN115485827A (zh) 2022-12-16

Family

ID=75888280

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202180025147.4A Pending CN115485827A (zh) 2020-06-17 2021-04-23 具有共享电极的集成晶体管

Country Status (5)

Country Link
US (1) US11417644B2 (https=)
EP (1) EP4169065A1 (https=)
JP (1) JP2023530546A (https=)
CN (1) CN115485827A (https=)
WO (1) WO2021257180A1 (https=)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11863130B2 (en) 2020-04-03 2024-01-02 Wolfspeed, Inc. Group III nitride-based radio frequency transistor amplifiers having source, gate and/or drain conductive vias
JP7474349B2 (ja) 2020-04-03 2024-04-24 ウルフスピード インコーポレイテッド Ｒｆ増幅器パッケージ
US12074123B2 (en) 2020-04-03 2024-08-27 Macom Technology Solutions Holdings, Inc. Multi level radio frequency (RF) integrated circuit components including passive devices
JP7691434B2 (ja) * 2020-04-03 2025-06-11 マコム テクノロジー ソリューションズ ホールディングス， インコーポレイテッド 裏面ソース端子、ゲート端子及び／又はドレイン端子を有するｉｉｉ族窒化物ベースの高周波増幅器
US20220376041A1 (en) * 2021-04-12 2022-11-24 Innoscience (Suzhou) Technology Co., Ltd. Semiconductor device and method for manufacturing the same
US20240429870A1 (en) * 2023-06-23 2024-12-26 Macom Technology Solutions Holdings, Inc. Group III Nitride Doherty Amplifier Using Different Epitaxial Structures
WO2025197830A1 (ja) * 2024-03-21 2025-09-25 ヌヴォトンテクノロジージャパン株式会社 ドハティ増幅器

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1893084A (zh) * 2005-07-07 2007-01-10 松下电器产业株式会社 半导体装置
KR20070036939A (ko) * 2005-09-30 2007-04-04 주식회사 하이닉스반도체 상변환 기억 소자 및 그의 제조방법
CN101170300A (zh) * 2006-10-23 2008-04-30 三菱电机株式会社 高频功率放大器
US20080169474A1 (en) * 2003-03-03 2008-07-17 Cree, Inc. Integrated Nitride and Silicon Carbide-Based Devices and Methods of Fabricating Integrated Nitride-Based Devices
US20190109222A1 (en) * 2017-06-21 2019-04-11 Cree, Inc. Semiconductor devices having a plurality of unit cell transistors that have smoothed turn-on behavior and improved linearity

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4120394A1 (de) 1991-06-20 1992-12-24 Bosch Gmbh Robert Monolithisch integrierte schaltungsanordnung
JP3439290B2 (ja) * 1995-12-28 2003-08-25 日本電気株式会社 半導体装置
SE528473C2 (sv) * 2005-02-28 2006-11-21 Infineon Technologies Ag Monolitiskt integrerad effektförstärkaranordning
EP2339746B1 (en) 2009-12-15 2013-02-20 Nxp B.V. Doherty amplifier with composed transfer characteristic having multiple peak amplifiers
JP2012013664A (ja) * 2010-05-31 2012-01-19 Toshiba Corp 段間プローブ用パターン構造、段間測定方法、およびマルチチップモジュール高周波回路
JP6025295B2 (ja) * 2010-06-24 2016-11-16 富士通株式会社 化合物半導体装置
JP5361951B2 (ja) * 2011-06-17 2013-12-04 株式会社東芝 半導体電力増幅器
WO2014188651A1 (ja) * 2013-05-20 2014-11-27 パナソニックＩｐマネジメント株式会社 半導体装置
US9030260B2 (en) * 2013-07-19 2015-05-12 Alcatel Lucent Dual-band high efficiency Doherty amplifiers with hybrid packaged power devices
US10050139B2 (en) * 2016-06-24 2018-08-14 Infineon Technologies Ag Semiconductor device including a LDMOS transistor and method
US20190028065A1 (en) * 2017-07-24 2019-01-24 Macom Technology Solutions Holdings, Inc. Fet operational temperature determination by gate structure resistance thermometry
US10325833B1 (en) 2018-02-20 2019-06-18 Newport Fab, Llc Bent polysilicon gate structure for small footprint radio frequency (RF) switch
US10600746B2 (en) * 2018-07-19 2020-03-24 Cree, Inc. Radio frequency transistor amplifiers and other multi-cell transistors having gaps and/or isolation structures between groups of unit cell transistors

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080169474A1 (en) * 2003-03-03 2008-07-17 Cree, Inc. Integrated Nitride and Silicon Carbide-Based Devices and Methods of Fabricating Integrated Nitride-Based Devices
CN1893084A (zh) * 2005-07-07 2007-01-10 松下电器产业株式会社 半导体装置
KR20070036939A (ko) * 2005-09-30 2007-04-04 주식회사 하이닉스반도체 상변환 기억 소자 및 그의 제조방법
CN101170300A (zh) * 2006-10-23 2008-04-30 三菱电机株式会社 高频功率放大器
US20190109222A1 (en) * 2017-06-21 2019-04-11 Cree, Inc. Semiconductor devices having a plurality of unit cell transistors that have smoothed turn-on behavior and improved linearity

Also Published As

Publication number Publication date
EP4169065A1 (en) 2023-04-26
US20210398971A1 (en) 2021-12-23
US11417644B2 (en) 2022-08-16
JP2023530546A (ja) 2023-07-19
WO2021257180A1 (en) 2021-12-23

Similar Documents

Publication Publication Date Title
US11417644B2 (en) Integration of multiple discrete GaN devices
EP2639829B1 (en) Group III-V and Group IV Composite Switch
US10204992B2 (en) Tuned semiconductor amplifier
CN101894863B (zh) 场效应晶体管
KR102632903B1 (ko) 트랜지스터 레벨 입력 및 출력 고조파 종단들
US20140225162A1 (en) Integrated Half-Bridge Circuit with Low Side and High Side Composite Switches
CN112534570B (zh) 具有增强模式和耗尽模式晶体管二者的单片微波集成电路
US7511315B2 (en) Semiconductor device and manufacturing method therefor
US12388007B2 (en) Capacitor networks for harmonic control in power devices
US20130175542A1 (en) Group III-V and Group IV Composite Diode
US20240396500A1 (en) Hybrid power amplifier with gan-on-si and gan-on-sic circuits
EP0494625A1 (en) Semiconductor device for improving high-frequency characteristics and avoiding chip cracking
CN118281049B (zh) 一种半导体器件
TWI850113B (zh) 功率模組封裝結構以及功率電晶體
US20250120156A1 (en) High electron mobility transistor
US20250096733A1 (en) Doherty amplifier with isolation structure
HK1236690B (en) Tuned semiconductor amplifier
HK1236690A1 (en) Tuned semiconductor amplifier

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination