CN115472600A

CN115472600A - High-contrast LED device and manufacturing method thereof

Info

Publication number: CN115472600A
Application number: CN202211117258.0A
Authority: CN
Inventors: 张汉春; 邵铁风; 王明臣
Original assignee: Zhejiang Dehe Photoelectric Technology Co ltd
Current assignee: Zhejiang Dehe Photoelectric Technology Co ltd
Priority date: 2022-09-14
Filing date: 2022-09-14
Publication date: 2022-12-13

Abstract

The invention relates to a high-contrast LED device, which comprises an LED chip and an LED bracket, wherein the LED bracket is provided with at least one mounting part; the mounting part comprises a light reflecting area and a non-light reflecting area, the LED chip is fixedly mounted in the light reflecting area, and the non-light reflecting area is covered with a black curing layer; the LED chip is of a forward mounting structure and is packaged through a packaging colloid. The LED chip has the advantages that the luminous efficiency of the LED chip is improved, and the LED chip with the upright structure is adopted, so that the production cost is low. The invention also relates to a manufacturing method of the LED device with high contrast, which has the advantages of simple operation and low cost and can give consideration to the high contrast and the brightness of the LED device. The invention also relates to another manufacturing method of the high-contrast LED device, which has the advantages of higher covering accuracy of the non-reflective area, simple operation and low cost.

Description

High-contrast LED device and manufacturing method thereof

Technical Field

The invention relates to the technical field of LED devices, in particular to a high-contrast LED device and a manufacturing method thereof.

Background

The contrast ratio refers to the difference of different brightness levels between the brightest white and the darkest black of a bright and dark area in an image, the larger the difference range is, the higher the contrast ratio is, and the smaller the difference range is, the lower the contrast ratio is. More precisely, contrast refers to the ratio of the brightest (white) to darkest (black) luminance of the same spot on the screen, but usually the contrast index of LED (Light Emitting Diode) products is related to the whole screen.

At present, the requirement of the LED display market for the display effect is higher and higher, and a high-contrast product can significantly improve the HDR (high dynamic range imaging) effect of a display screen. The current high-contrast products adopt two main schemes: scheme 1, a certain proportion of melanin is added into a packaging colloid adopted by an LED with a front-mounted structure; scheme 2, adopt the LED chip of flip-chip structure, remove the bonding wire process, reduce the visual area of metal pad.

However, both of these current solutions have some problems: in scheme 1, add melanin in the encapsulant, can lead to the light transmittance of encapsulant to become low to influence the luminance of light-emitting very greatly, the light that can't jet out can convert the heat into at last, leads to the LED screen body temperature to rise. Adopt flip chip in scheme 2, but flip structure's LED chip yields is lower, especially ruddiness chip, and the yields is only 60% -70% to lead to the cost to be high.

Therefore, a high contrast LED device with high light emitting efficiency and low cost and a method for manufacturing the same are needed.

Disclosure of Invention

Technical problem to be solved

In view of the above disadvantages and shortcomings of the prior art, the present invention provides a high contrast LED device and a method for manufacturing the same, which solves the technical problems of low light emitting efficiency and high cost of the prior art.

(II) technical scheme

In order to achieve the purpose, the invention adopts the main technical scheme that:

in a first aspect, the present invention provides a high contrast LED device, including an LED chip and an LED support, the LED support having at least one mounting portion thereon. The installation department includes reflection of light district and non-reflection of light district, and LED chip fixed mounting has black solidification layer in reflection of light district, non-reflection of light district coats. The LED chip is of a positive mounting structure and is packaged through transparent packaging colloid.

Optionally, the black cured layer is formed by depositing and curing an opaque black substance or is formed by spraying and then curing a mixture of carbon powder and a curing agent.

Optionally, the proportion of the carbon powder in the mixture of the carbon powder and the curing agent is 0.1-5%.

Alternatively, the thickness of the black cured layer is 20 to 50 μm.

Optionally, the encapsulant is mixed with the light scattering particles, and the proportion of the light scattering particles mixed in the encapsulant is more than 30%.

Optionally, the LED chip includes an R chip, a G chip, and a B chip.

Optionally, the LED holder is an SMD holder or a substrate holder.

In a second aspect, the present invention provides a method for manufacturing the above high-contrast LED device, including the steps of:

s1, obtaining the LED support after die bonding and wire bonding, and spraying the prepared black coating on a non-reflection area of an installation part of the LED support to form a black coating. Wherein the black coating is a mixture of a curing agent and carbon powder, and the carbon powder accounts for 0.1-5% of the mixture.

And S2, curing the sprayed black coating to form a black cured layer. Wherein the thickness of the black cured layer is 20 to 50 μm.

S3, the black curing layer is inspected through AOI, if the coverage of the black curing layer 3 on a certain installation part to the non-reflective area is less than 90%, the installation part is marked as bad, the non-reflective area of the installation part with the bad mark is subjected to secondary spraying and curing, and then the inspection is performed through AOI; until the coverage of the non-retroreflective areas by the black cured layer 3 is greater than 90%.

S4, after the LED chips are inspected to be qualified, packaging the LED chips on the LED support by using a packaging colloid to obtain an LED device; wherein, the adopted encapsulation colloid is mixed with the light scattering particles, and the proportion of the light scattering particles is more than 30 percent.

In a third aspect, the present invention provides another method for manufacturing the above high-contrast LED device, including the steps of:

s1, obtaining the LED support after die bonding and wire bonding, shielding a reflective area of an installation part on the LED support, and depositing an opaque black substance on a non-reflective area of the installation part through a coating process to form a black deposition layer.

And S2, curing the black deposition layer formed by deposition to form a black curing layer. Wherein the black cured layer has a thickness of 20 to 50 μm.

S3, the black curing layer is inspected through AOI, if the coverage of the black curing layer 3 on a non-light-reflecting area on a certain installation part is less than 90%, the installation part is marked to be poor, the non-light-reflecting area of the installation part with poor mark is subjected to secondary spraying and curing, and then the inspection is performed through AOI; until the coverage of the non-retroreflective areas by the black cured layer 3 is greater than 90%.

(III) advantageous effects

The beneficial effects of the invention are:

according to the high-contrast LED device, the black curing layer covers the non-reflection area of the LED support mounting part, so that the visible area of the non-reflection area is reduced, and the contrast of the LED device is improved. The contrast is improved without adding melanin in the packaging colloid, the luminous brightness of the LED chip is not influenced, and the light transmittance of the packaging colloid is not reduced.

According to the manufacturing method of the high-contrast LED device, the pre-prepared black coating is sprayed on the LED support with the die bonding and wire bonding, the black coating is cured to form the black curing layer, and the black deposition layer is inspected through AOI, so that the coverage of the black deposition layer on the non-reflection area is ensured to be more than 90%. The manufacturing method has simple process, and can give consideration to high contrast and brightness of the LED device through lower cost.

According to the manufacturing method of the LED device with high contrast, the area selective coating process is performed on the LED support with the die bonding and wire bonding, the black deposition layer is deposited on the non-reflection area of the installation part, the black deposition layer is cured to form the black curing layer, the non-reflection layer in the installation part can be accurately covered, and the black deposition layer is inspected through AOI, so that the coverage of the black deposition layer on the non-reflection area is ensured to be more than 90%. The manufacturing method has higher accuracy of covering the non-reflective area, simple operation and low cost.

Drawings

Fig. 1 is a schematic TOP view of a TOP type LED device in embodiment 1 of the present invention;

fig. 2 is a schematic cross-sectional view of a TOP type LED device in embodiment 1 of the present invention;

fig. 3 is a schematic top view of a CHIP type LED device in embodiment 1 of the present invention;

fig. 4 is a schematic plan view of a mounting portion of a CHIP type LED device in embodiment 1 of the present invention;

fig. 5 is a schematic sectional view of a mounting portion of a CHIP type LED device in embodiment 1 of the present invention;

fig. 6 is a schematic cross-sectional view of a TOP type LED device in the prior art;

fig. 7 is a schematic cross-sectional view of a mounting portion of a CHIP type LED device in the related art.

[ instruction of reference ]

1: a PLCC scaffold; 2: an LED chip; 21: an R chip; 22: g chip; 23: b, chip; 3: a black cured layer; 4: and (7) a PCB board.

Detailed Description

In order to better understand the above technical solutions, exemplary embodiments of the present invention will be described in more detail below with reference to the accompanying drawings. While exemplary embodiments of the invention are shown in the drawings, it should be understood that the invention may be embodied in various forms and should not be limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the invention to those skilled in the art.

Example 1:

as shown in fig. 1 to 4, the core of the present invention is to cover the non-reflective area of the LED bracket mounting portion with the black cured layer 3, so as to reduce the visible area of the non-reflective area, and further improve the contrast of the LED device, so that the contrast of the LED device is higher than 5000. And the LED chip 2 with the upright structure is adopted, so that the production cost is low. The LED device specifically comprises an LED chip 2 and an LED support, wherein the LED support is provided with at least one mounting part. The installation department includes reflection of light district and non-reflection of light district, and LED chip 2 fixed mounting has black solidified layer 3 on the non-reflection of light district in the reflection of light district. The LED chip 2 is the LED chip 2 with a positive mounting structure, and the LED chip 2 is packaged by the light-permeable packaging colloid.

Specifically, the LED chip 2, also called an LED light emitting chip, is a core component of an LED device, and the main material of the LED chip is a wafer of a group iii-v compound semiconductor, that is, a wafer obtained by cutting the wafer is attached to an LED support and packaged. Wherein the wafer is composed of two parts, one part being a P-type semiconductor in which holes predominate and the other part being an N-type semiconductor in which electrons predominate, the two semiconductors being joined together to form a P-N junction. When a current is applied to the wafer through the wire, electrons are pushed to the P region where they recombine with holes and then emit energy in the form of photons, which is the principle of LED chip 2 emitting light. In the embodiment of the invention, the electrodes of the LED chip are all arranged on the top and are respectively and electrically connected with the electrodes on the LED bracket through gold wires. The LED chip with the upright structure is mature in technology and dominates the advantage of low price. The principle of the high-contrast LED device provided by the embodiment of the invention is that the contrast is the ratio of the whitest brightness unit to the blackest brightness unit according to the definition of the contrast, namely, the brighter the white, the darker the black, and the higher the contrast. The non-reflection region of the LED support mounting part is covered by the black curing layer 3, the visible area of the non-reflection region is reduced, the brightness of white light emitted by the LED chip 2 is increased, and the black brightness of the LED chip is reduced. Thereby, the contrast of the LED device is improved. The design does not need to add melanin in the packaging colloid to improve the contrast, does not influence the luminous brightness of the LED chip 2, does not reduce the light transmittance of the packaging colloid, improves the luminous efficiency of the LED chip 2 compared with the prior art, adopts the LED chip 2 with a normal mounting structure, and has low production cost.

Specifically, as shown in fig. 1 to 4, the LED devices include TOP (TOP) type LED devices and CHIP (CHIP) type LED devices. The TOP type LED device refers to a TOP-surface light emitting LED device and a planar light emitting LED device, and the TOP type LED device generally uses a Plastic Leaded Chip Carrier (PLCC) support 1 as a packaging Carrier. The CHIP type LED device generally employs a PCB (Printed Circuit Board) Board 4 as a package carrier.

Preferably, the black cured layer 3 is formed by depositing and curing an opaque black substance or by spraying and then curing a mixture of carbon powder and a curing agent. In the embodiment, the opaque black substance is insulating carbon black or black masterbatch. It will be appreciated that the use of insulating carbon black or black masterbatch is only preferred and that other black insulating materials can be used to the same effect. The two curing modes have two common advantages that the cost is low, the process is simple, higher contrast can be obtained through lower cost and simple process, and the cost performance is high. As the curing agent, a material which is firmly bonded to BT (bismalimide Triazine, a trade name of resin chemical), PPA (Polyphthalamide), and metal, such as epoxy resin and silicone resin, can be used.

Further, the thickness of the black cured layer 3 is 20 to 50 μm. The black cured layer 3 is used for covering a non-reflection area of the LED support mounting part, the area of the non-reflection area is reduced, the thickness of the black cured layer is too small to achieve the covering effect, and the use effect of an LED device can be influenced if the thickness is too large. Therefore, the thickness of the black cured layer 3 is designed to be 20-50 μm, which can meet the practical use requirements, and on one hand, the effect of covering the non-reflective region can be realized, and on the other hand, the use effect of the LED device can not be influenced.

Furthermore, the proportion of the carbon powder in the mixture of the carbon powder and the curing agent is 0.1-5%. According to different curing agents, carbon powder with different proportions is mixed and added, and the spraying effect of the mixture is ensured.

Further, as shown in fig. 1 and 3, the LED chip 2 includes an R (red) chip 21, a G (green) chip 22, and a B (blue) chip 23, the R chip 21, the G chip 22, and the B chip 23 are arranged in this order from top to bottom, and electrodes of the three chips are electrically connected to electrodes of the LED holder mounting portion by gold wires, respectively. Red, green and blue are three primary colors of light, and the three color lights can be combined to present various color lights, so that a color image is displayed on the LED device.

Further, the encapsulation colloid is mixed with the light scattering particles, and the proportion of the light scattering particles mixed in the encapsulation colloid is more than 30%. Add astigmatic granule in the encapsulation colloid, can guarantee that the light of different colours carries out abundant mixed light in the single lamp pearl of LED (the single lamp pearl is constituteed to LED chip 2 in installation department and the installation department), improve the homogeneity that LED lamp pearl mixed the light to and improve the purity of the chromatic light of LED lamp pearl, and then make the LED device reach better display effect.

Further, the LED support is made of materials such as FR-4 (Tera-Function) or BT resin. As shown in fig. 1 and 2, the LED holder is an SMD (Surface Mounted components) holder or a substrate holder. SMD holder refers to a conventional component packaging carrier, for example a PLCC holder 1. Common components such as a chip diode, a chip transistor, and a chip IC (Integrated Circuit) are also used as the SMD holder. The substrate support is formed by adopting a PCB 4 as a packaging carrier. The LED device adopts SMD support or base plate support, makes black solidified layer 3 homoenergetic at the non-reflector layer of SMD support or base plate support installation department and can reach the effect that improves LED device contrast.

In this regard, as shown in fig. 5 to 6, the addition of melanin to the encapsulant in the prior art has not been satisfactory, although it may improve the contrast to some extent. The melanin can reduce the light transmittance of the encapsulant, and greatly affect the brightness of the light. After the light emitted by the LED chip 2 enters the encapsulant, the light that cannot be emitted is converted into heat due to the influence of the melanin, so that the temperature of the LED device is increased, and the use effect of the LED device is affected. The effect of the high-contrast LED device provided by the embodiment of the present invention is further embodied, and on the basis of not affecting the brightness and considering the production cost, the LED device can realize a higher contrast, has a good market value, and can also be used for XR (Extended Reality, which is a joint name of VR (virtual Reality), AR (augmented Reality), and MR (mixed Reality).

Example 2:

the embodiment of the invention provides a method for manufacturing the high-contrast LED device in the embodiment 1, which specifically comprises the following steps:

s1, obtaining an LED bracket after die bonding and wire bonding (namely, fixedly mounting an LED chip 2 on the LED bracket), and spraying the prepared black coating on a non-reflection area of a mounting part of the LED bracket to form a black coating. Wherein the black coating is a mixture of a curing agent and carbon powder, and the carbon powder accounts for 0.1-5% of the mixture. According to different curing agents, carbon powder with different proportions is mixed and added, so that the spraying effect of the mixture is ensured.

And S2, curing the sprayed black coating to form a black cured layer 3. The thickness of the black cured layer 3 is 20 to 50 μm. The black cured layer 3 is used for covering a non-reflection area of the LED support mounting part, the area of the non-reflection area is reduced, the thickness of the black cured layer is too small to achieve the covering effect, and the use effect of an LED device can be influenced if the thickness is too large. Therefore, the thickness of the black cured layer 3 is designed to be 20-50 μm, which can meet the practical use requirements, and on one hand, the effect of covering the non-reflective region can be realized, and on the other hand, the use effect of the LED device can not be influenced.

S3, the black curing layer 3 is inspected through Automatic Optical Inspection (AOI), if the coverage of the black curing layer 3 on a non-reflective area on a certain installation part is less than 90%, the installation part is marked as bad, the non-reflective area of the installation part with the bad mark is subjected to secondary spraying and curing, and then the Inspection is performed through the AOI; until the coverage of the non-retroreflective areas by the black cured layer 3 is greater than 90%. The AOI can accurately detect the coverage of the black cured layer 3 on the non-reflective area, and ensure that the coverage of the black cured layer 3 on the non-reflective area is more than 90 percent.

S4, after the LED chip is qualified, packaging the LED chip 2 on the LED support by using a packaging colloid to obtain an LED device; wherein, the encapsulation colloid of adoption mixes has the astigmatism granule, and the shared proportion of astigmatism granule is more than 30%, adds the astigmatism granule in the encapsulation colloid and can guarantee that the light of different colours carries out abundant mixed light in the LED lamp pearl to improve the homogeneity of LED lamp pearl mixed light to and improve the purity of the chromatic light of LED lamp pearl, and then make the LED device reach better display effect.

And S5, carrying out light splitting test on the LED devices through an LED light splitting and color separating instrument, and classifying and grouping the manufactured LED devices so as to facilitate subsequent procedures.

Therefore, the LED support with the die bonding and wire bonding wires is sprayed with the pre-prepared black coating, the black coating is cured to form the black curing layer 3, and the black deposition layer is inspected through AOI, so that the completeness of the coverage of the non-reflection area is ensured. The manufacturing method is simple in process, and high contrast and brightness of the LED device can be achieved at low cost.

Specifically, the method for manufacturing the TOP type LED device according to the present embodiment includes the following specific steps:

s1, obtaining the PLCC support 1 after die bonding and wire bonding, and spraying the prepared black paint on a non-reflective area of the mounting part of the PLCC support 1 to form a black coating. Wherein the black coating is a mixture of a curing agent and carbon powder, and the carbon powder accounts for 0.1-5%.

And S2, curing the sprayed black coating to form a black cured layer 3. The thickness of the black cured layer 3 is 20 to 50 μm.

S3, the black curing layer 3 is inspected through AOI, if the coverage of the black curing layer 3 on a certain installation part to the non-reflective area is less than 90%, the installation part is marked as bad, the non-reflective area of the installation part with the bad mark is secondarily sprayed and cured, and then the AOI is used for inspection; until the coverage of the non-retroreflective areas by the black cured layer 3 is greater than 90%.

And S4, after the LED chip is qualified, packaging the LED chip 2 on the PLCC support 1 through a dispenser, and obtaining the TOP type LED device after packaging. Wherein, the adopted encapsulation colloid is mixed with the astigmatic particles, and the proportion of the astigmatic particles is more than 30 percent.

And S5, performing light splitting test on the TOP type LED devices through an LED light splitting and color separating instrument, and classifying and grouping the manufactured TOP type LED devices to facilitate the subsequent process.

Specifically, the CHIP type LED device manufactured by the method of the present embodiment includes the specific steps of:

s1, obtaining the PCB 4 after die bonding and wire bonding, and spraying the prepared black coating on a non-reflection area of an installation part of the PCB 4 to form a black coating. Wherein the black coating is a mixture of a curing agent and carbon powder, and the carbon powder accounts for 0.1-5%.

And S4, after the LED chips are qualified, carrying out mould pressing packaging treatment on the LED chips 2 on the PCB 4 through an MGP (Multi Gate Package, multi injection head package) plastic package mould. Wherein, the adopted encapsulation colloid is mixed with the light scattering particles, and the proportion of the light scattering particles is more than 30 percent. The packaging form of multiple injection heads is adopted, and the method has the advantages of flow channel equalization, short-distance filling realization, high resin utilization rate, stable packaging process and good packaging quality.

And S5, cutting and separating the molded and packaged PCB 4 to obtain the CHIP type LED device.

And S6, carrying out light splitting test on the CHIP type LED devices through an LED light splitting and color separating instrument, and classifying and grouping the manufactured CHIP type LED devices so as to facilitate the subsequent procedures.

Example 3:

an embodiment of the present invention provides another method for manufacturing an LED device with high contrast described in embodiment 1, which specifically includes the steps of:

s1, obtaining an LED support after die bonding and wire bonding, shielding a light reflecting area of an installation part on the LED support, and depositing an opaque black substance on a non-light reflecting area of the installation part through a coating process to form a black deposition layer; in the embodiment, the opaque black substance is insulating carbon black or black masterbatch.

S2, curing the black deposition layer formed by deposition to form a black curing layer 3; the thickness of the black cured layer 3 is 20 to 50 μm.

S3, the black curing layer 3 is inspected through AOI, if the coverage of the black curing layer 3 on a non-light-reflecting area on a certain installation part is less than 90%, the installation part is marked as defective, the non-light-reflecting area of the installation part with the defective mark is subjected to secondary spraying and curing, and then the inspection is performed through AOI; until the coverage of the non-retroreflective areas by the black cured layer 3 is greater than 90%.

S4, after the LED chip is qualified, packaging the LED chip 2 on the LED support by using a packaging colloid to obtain an LED device; wherein, the adopted encapsulation colloid is mixed with the light scattering particles, and the proportion of the light scattering particles is more than 30 percent.

From this, through regional selectivity coating process on the LED support of solid brilliant bonding wire, form the black sedimentary deposit at the non-reflection of light district deposit of installation department, form black solidified layer 3 through the solidification with the black sedimentary deposit, can be more accurate cover the non-reflection of light layer in the installation department, the rethread AOI inspects the black sedimentary deposit, guarantees the integrity to non-reflection of light district cover. The manufacturing method has higher accuracy of covering the non-reflective area, simple operation and low cost.

s1, obtaining a PLCC support 1 after die bonding and wire bonding, shielding a light reflecting area of an installation part on the PLCC support 1, and depositing an opaque black substance on a non-light reflecting area of the installation part through a film coating process to form a black deposition layer.

S4, after the LED chips are qualified, packaging the LED chips 2 on the PLCC support 1 by a dispenser to obtain a TOP type LED device; wherein, the adopted encapsulation colloid is mixed with the light scattering particles, and the proportion of the light scattering particles is more than 30 percent.

s1, obtaining a PCB 4 after die bonding and wire bonding, shielding a light reflecting area of an installation part on the PCB 4, and depositing an opaque black substance on a non-light reflecting area of the installation part through a film coating process to form a black deposition layer;

s2, curing the black deposition layer formed by deposition to form a black curing layer 3; wherein the thickness of the black cured layer 3 is 20 to 50 μm;

And S4, after the LED chips are qualified, carrying out mould pressing packaging treatment on the LED chips 2 on the PCB 4 through an MGP (Multi Gate Package, multi injection head package) plastic package mould. Wherein, the adopted encapsulation colloid is mixed with the light scattering particles, and the proportion of the light scattering particles is more than 30 percent.

In the description of the present invention, it is to be understood that the terms "first", "second" and the like are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implying any number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of the present invention, "a plurality" means two or more unless specifically defined otherwise.

In the present invention, unless otherwise explicitly stated or limited, the terms "mounted," "connected," "fixed," and the like are to be construed broadly, e.g., as being permanently connected, detachably connected, or integral; can be mechanically or electrically connected; can be directly connected or indirectly connected through an intermediate medium; either internal to the two elements or in an interactive relationship of the two elements. The specific meanings of the above terms in the present invention can be understood by those skilled in the art according to specific situations.

In the present invention, unless expressly stated or limited otherwise, a first feature is "on" or "under" a second feature, and the first and second features may be in direct contact, or the first and second features may be in indirect contact via an intermediate. Also, a first feature "on," "above," and "over" a second feature may be directly or obliquely above the second feature, or simply mean that the first feature is at a higher level than the second feature. A first feature being "under," "below," and "beneath" a second feature may be directly under or obliquely under the second feature, or may simply mean that the first feature is at a lower level than the second feature.

In the description herein, the description of the terms "one embodiment," "some embodiments," "an embodiment," "an example," "a specific example" or "some examples" or the like, means that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the invention. In this specification, the schematic representations of the terms used above are not necessarily intended to refer to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples. Moreover, various embodiments or examples and features of various embodiments or examples described in this specification can be combined and combined by one skilled in the art without being mutually inconsistent.

Although embodiments of the present invention have been shown and described above, it should be understood that the above embodiments are illustrative and not restrictive, and that those skilled in the art may make changes, modifications, substitutions and alterations to the above embodiments without departing from the scope of the present invention.

Claims

1. A high-contrast LED device is characterized in that,

the LED lamp comprises an LED chip (2) and an LED bracket, wherein the LED bracket is provided with at least one mounting part;

the mounting part comprises a light reflecting area and a non-light reflecting area, the LED chip (2) is fixedly mounted in the light reflecting area, and the non-light reflecting area is covered with a black curing layer (3);

the LED chip (2) is the LED chip (2) with the upright structure, and the LED chip (2) is packaged through the light-permeable packaging colloid.

2. The high contrast LED device of claim 1,

the black curing layer (3) is formed by depositing and curing a lightproof black substance or is formed by spraying and then curing a mixture of carbon powder and a curing agent.

3. The high-contrast LED device according to claim 2,

the proportion of the carbon powder in the mixture of the carbon powder and the curing agent is 0.1 to 5 percent.

4. The high contrast LED device of claim 3,

the thickness of the black cured layer (3) is 20 to 50 μm.

5. The high-contrast LED device according to claim 4,

the packaging colloid is mixed with the light scattering particles, and the proportion of the light scattering particles mixed in the packaging colloid is more than 30%.

6. The high contrast LED device of claim 5,

the LED chip (2) includes an R chip (21), a G chip (22), and a B chip (23).

7. The high contrast LED device of claim 6,

the LED support is an SMD support or a substrate support.

8. A method for fabricating a high contrast LED device according to claim 7, comprising the steps of:

s1, obtaining an LED bracket after die bonding and wire bonding, and spraying a prepared black coating on a non-reflection area of an installation part of the LED bracket to form a black coating; wherein the black coating is a mixture of a curing agent and carbon powder, and the carbon powder accounts for 0.1-5% of the mixture;

s2, curing the sprayed black coating to form a black cured layer (3); wherein the thickness of the black cured layer (3) is 20 to 50 μm;

s3, the black curing layer (3) is inspected through AOI, if the coverage of the black curing layer (3) on a certain installation part to the non-reflective area is less than 90%, the installation part is marked as bad, the non-reflective area of the installation part with the bad mark is secondarily sprayed and cured, and then the inspection is performed through AOI; until the coverage of the black cured layer 3 on the non-reflective area is more than 90 percent;

s4, after the LED device is inspected to be qualified, packaging the LED chip (2) on the LED support by using a packaging colloid to obtain an LED device; wherein, the adopted encapsulation colloid is mixed with the light scattering particles, and the proportion of the light scattering particles is more than 30 percent.

9. A method for making a high contrast LED device according to claim 7, comprising the steps of:

s1, obtaining an LED support after die bonding and wire bonding, shielding a light reflecting area of an installation part on the LED support, and depositing an opaque black substance on a non-light reflecting area of the installation part through a coating process to form a black deposition layer;

s2, curing the black deposition layer formed by deposition to form a black curing layer (3); wherein the thickness of the black cured layer (3) is 20 to 50 μm;

s3, the black curing layer (3) is inspected through AOI, if the coverage of the black curing layer (3) on a certain installation part to the non-light-reflecting area is less than 90%, the installation part is marked as defective, the non-light-reflecting area of the installation part with the defective mark is subjected to secondary spraying and curing, and then the inspection is performed through AOI; until the coverage of the black cured layer 3 on the non-reflective area is more than 90 percent;