JP2002064112A - Manufacturing method of photoelectron component - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a method for inexpensively manufacturing compact and thin photoelectronic components in large quantities in unit time. SOLUTION: This method includes a step (S12) that forms a groove on the surface of a semiconductor substrate where a plurality of LED chips are formed, and a bump is formed to each LED chip, first and second steps (S14 and S18) that apply transparent resin onto the surface and backside of the semiconductor substrate where the groove is formed, respectively, and a step (S24) that cuts a position where the groove is formed for dividing into each photoelectronic component.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing an optoelectronic component, and more particularly to a method for manufacturing an optoelectronic component by sealing a light emitting element such as an LED (Light Emitting Diode) and a light receiving element such as a photodiode. The present invention relates to a method for manufacturing an optoelectronic component.

[0002]

2. Description of the Related Art In recent years, light receiving elements for converting light energy to electric energy and light emitting elements for converting electric energy to light energy have been used in various fields. Examples of the light receiving element include a photodiode, a phototransistor, a CdS cell (cadmium sulfide cell), a photothyristor, and an EPROM (Erasable Programmable ReadO).
nly Memory) and the like, and an LED is a typical light emitting element.

[0003] As the LED as a representative of the above-mentioned light emitting element, an LED which emits light of wavelengths in a red region and a green region has been practically used. Display devices using LEDs have also been put to practical use. For example, a display plate or the like that can perform color-coded display of three colors by combining an LED that emits light of a wavelength in the red region and an LED that emits light of a wavelength in the green region is provided in a train or the like. LEDs have the characteristics of extremely high luminous efficiency, extremely low heat generation, and long element life. Therefore, they have been applied to display devices and signals for displaying information to a large number of people. I have.

As is well known, the three primary colors of light are red (R), green (G), and blue (B), but an LED that emits light in the blue region has not been realized. In recent years, LEDs that emit light at a wavelength in the blue region have finally been put to practical use. Thus, all the LEDs emitting the three primary colors of light are obtained, so that the display capability of the display panel can be improved by achieving full color. Further, it is also possible to realize all traffic lights with LEDs.

[0005] By the way, since an LED has an excellent monochromatic peak wavelength, it cannot emit an emission wavelength such as a white color. Therefore, LEs that emit various colors by converting the light emitted from the LED chips to other colors using an LED chip that emits light in the blue region and a fluorescent substance.
D has been devised. With this LED, a single L
For example, white light can be emitted by the ED.

[0006] To explain this technique in detail, an LED chip or the like that emits light in the blue region is arranged on a cup provided at the tip of a lead frame. A metal stem or a metal post provided with the LED chip is electrically connected to the LED chip. Then, the LED chip is sealed by incorporating a fluorescent substance that absorbs light from the LED chip and converts the wavelength into a resin mold member or the like that seals the LED chip. For details of this technique, see, for example, JP-A-10-107325 and JP-A-10-190065.
Please refer to Japanese Patent Publication No.

[0007]

In the prior art, as described above, an LED element is arranged on a cup provided at the tip of a lead frame, and a part of the lead frame, the cup, and the LED element are connected. There was a problem that the external shape of the LED element was inevitably increased because the package was sealed in a lump. In addition, in order to mainly control the directional characteristics of the LED, the upper shape of the resin for sealing the LED element is formed in a semicircular shape so as to have the function of a lens.
Part of the lead frame, cup and LE as described above
In the case of the sealing mode in which the D elements are collectively sealed, there is a problem that the shape of the lens becomes large, and the thickness of the LED (the length of light emitted from the LED element in the optical axis direction) becomes large.

As described above, LEDs have extremely high luminous efficiency, extremely low heat generation, and long life of the elements. In addition, an LED that can emit all light in the red, green, and blue regions, and further emits light in the blue region
It is also possible to emit white light with a single LED by using a chip and a fluorescent substance. Therefore, in the future, LED
Is not difficult to predict for use in various applications.
It is also considered necessary to integrate and use the ED. In such a case, it is considered necessary to reduce the outer shape of the LED and reduce the thickness.

SUMMARY OF THE INVENTION The present invention has been made in view of the above circumstances, and has as its object to provide a method for manufacturing an optoelectronic component capable of producing a small and thin optoelectronic component at low cost and in large quantities per unit time. And

[0010]

In order to solve the above-mentioned problems, a method of manufacturing an optoelectronic component according to the present invention is directed to a substrate having a plurality of optoelectronic component elements formed thereon and a connection electrode formed for each of the optoelectronic component elements. A groove forming step of forming a groove on the surface, a first coating step of coating a transparent resin on the surface of the substrate on which the groove is formed, a second coating step of coating a transparent resin on the back surface of the substrate, And separating the formed position into individual optoelectronic components. In order to solve the above problems, a method of manufacturing an electronic component according to the present invention includes applying a transparent resin to a substrate surface on which a plurality of optoelectronic component elements are formed and a connection electrode is formed for each of the optoelectronic component elements. A first coating step;
A groove forming step of forming a groove on the back surface of the substrate, a second application step of applying a transparent resin on the back surface of the substrate, and a separation step of cutting the position where the groove is formed and separating into individual optoelectronic components. It is characterized by having. In the method for manufacturing an optoelectronic component according to the present invention, the groove is formed between optoelectronic component elements formed on the substrate. In the method for manufacturing an optoelectronic component according to the present invention, the optoelectronic component element emits light in a blue region. Further, in the method for manufacturing an optoelectronic component according to the present invention, the transparent resin includes a fluorescent substance that absorbs at least a part of light emitted from the optoelectronic component element, converts the wavelength, and emits light. In the method for manufacturing an optoelectronic component according to the present invention, the first applying step applies the transparent resin by stencil printing under vacuum. Further, the method for manufacturing an optoelectronic component of the present invention is characterized by further comprising a curing step of curing the sealing resin applied in the first application step. The method for manufacturing an optoelectronic component according to the present invention may further include polishing the resin applied to the substrate surface in the first coating step to expose the connection electrode between the first coating step and the second coating step. It is characterized by further comprising a step. Further, the method for manufacturing an optoelectronic component of the present invention is characterized by further comprising a curing step of curing the sealing resin applied in the second application step. Further, the method of manufacturing an optoelectronic component according to the present invention is characterized in that the method further comprises a connection ball forming step of forming a connection ball for the connection electrode before the separation step. Further, a method for manufacturing an optoelectronic component according to the present invention includes a step of sealing the optoelectronic component manufactured using any of the above-described methods for manufacturing an optoelectronic component with a transparent resin.

[0011]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, a method for manufacturing an optoelectronic component according to an embodiment of the present invention will be described in detail with reference to the drawings. In the following description, an LED (Light Em
An example in which an optoelectronic component is manufactured by sealing an itting diode (light emitting diode) chip will be described. FIG.
FIG. 2 is a flowchart showing a process sequence of a method for manufacturing an optoelectronic component according to an embodiment of the present invention, FIG. 2 is a perspective view showing a semiconductor substrate on which LED chips as a plurality of optoelectronic component elements are formed, and FIG. FIG. 3 is an enlarged top view of a semiconductor substrate surface on which a plurality of LED chips are formed. FIGS. 4 to 6 are cross-sectional views illustrating how to manufacture an electronic component using the method for manufacturing an electronic component according to the embodiment of the present invention. In the following description, the process procedure shown in FIG. 1 will be described with reference to FIGS.

First, in this embodiment, in order to manufacture an optoelectronic component, a semiconductor substrate 10 having a plurality of LED chips 12 shown in FIG. 2 is used. In the present embodiment, the LED chip 12 emits light in a blue region.
An nSe LED chip or a GaN LED chip is assumed. The ZnSe-based LED chip uses, for example, a ZnSe substrate as the semiconductor substrate 10, and sequentially places an n-type ZnSe layer, a ZnCdSe layer, and a ZnTeS on the ZnSe substrate.
A multilayer film composed of an e layer and a p-type ZnSe layer are formed. Then, a part of the LED chip is removed by etching or the like, a negative electrode is formed on the n-type ZnSe layer using In or the like, and a positive electrode (for example, gold (Au)) is formed on the p-type ZnSe layer by ohmic contact. ) Is formed.

The GaN-based LED chip uses, for example, a sapphire substrate as the semiconductor substrate 10 and a buffer layer, an n-type GaN layer, a Si-doped GaN layer, and a GaN layer and Si-doped In _x on the sapphire substrate in this order. Ga _y N
(0 ≦ x <1, 0 ≦ y ≦ 1) layers, Mg
To form a p-type In _x Ga _y N layer doped with Mg and a p-type GaN layer doped with Mg. Then, a part of the LED chip is removed by etching or the like, a negative electrode is formed on the n-type GaN layer using Ni or the like, and a positive electrode is formed on the Mg-doped p-type GaN layer using Ni. I do.

As shown in FIGS. 3 and 4A, in the present embodiment, the negative electrode 14 and the positive electrode 16 of each LED chip 12 are formed on the front side of the semiconductor substrate 10, and Negative electrode 14 and positive electrode 1 in the thickness direction of 10
The LED chip 12 having a structure different from that of the LED chip 6 will be described as an example. FIG. 4A is a sectional view taken along the line AA in FIG.

When the process is started, a step of forming bumps as connection electrodes on the negative electrode 14 and the positive electrode 16 of the LED chips 12 formed on the semiconductor substrate 10 is performed (step S10). FIG. 4B shows the LED chip 12.
FIG. 4 is a cross-sectional view showing a state in which bumps 18 and 20 are formed on the negative electrode 14 and the positive electrode 16 of FIG. The bumps 18 and 20
For example, it is formed of a metal such as aluminum (Al) or copper (Cu). As shown, the negative electrode 14 is connected to the semiconductor substrate 10.
The bumps 18 are formed longer because they are formed in portions where a part of the semiconductor substrate 10 is removed by etching or the like, and the bumps 20 are formed shorter because the positive electrodes 16 are formed on the surface of the semiconductor substrate 10. Therefore, the bumps 18 and 20 are formed on the negative electrode 14 and the positive electrode 16, respectively, so that their height positions are substantially constant.

When the processing for forming the bumps 18 and 20 is completed, a step of forming a groove between the individual LED chips 12 is performed (step S12). FIG. 4C is a cross-sectional view illustrating a state in which a groove is formed between the LED chips 12. In forming the groove, first, the sheet 22 is attached to the back surface of the semiconductor substrate 10. This sheet 22 is used for the semiconductor substrate 10
In order to prevent the semiconductor substrate 10 from being individually separated when the groove is formed, and to apply the resin to the surface of the semiconductor substrate 10 by printing, the resin is applied to the back surface of the semiconductor substrate 10 to prevent the applied resin from leaking. Affixed. The sheet 22
When the printed sealing resin is cured at a high temperature, one that can withstand the resin curing temperature is used.

After the sheet 22 is attached to the back surface of the semiconductor substrate 10, a groove is formed between the LED chips 12 using a cutting machine 24. The cutting machine 24 is, for example, 0.05 to 0.4 m
The one that forms a groove having a width of about m is used. A groove is formed in the semiconductor substrate 10 by using the cutting machine 24. In the example shown in FIG.
22 attached to the back surface of the semiconductor substrate 10 from the front surface
Is formed. The shape of each LED chip 12 is rectangular as shown in FIG.
Are formed on all four sides of the LED chip 12, and each LE
It is formed so as to surround the periphery of the D chip 12.

When the groove 26 is formed in the semiconductor substrate 10,
The semiconductor substrate 10 having the groove 26 formed therein is disposed in a chamber provided in a resin printing machine (not shown), and the semiconductor substrate 1 having the bumps 18 and 20 and the groove 26 formed therein under vacuum.
A step of applying the transparent resin 28 to the zero surface by printing is performed (step S14). FIG. 5A shows bump 1
FIG. 9 is a cross-sectional view showing a state in which a transparent resin 28 is applied by printing on the surface of the semiconductor substrate 10 on which 8, 20, and the groove 26 are formed.

Printing of the transparent resin 28 is performed by using a stencil (not shown) for printing, in which a hole having a diameter slightly smaller than the diameter of the semiconductor substrate 10 is formed, and a squeegee sliding on the stencil. The transparent resin 28 used in the present embodiment is in a liquid state, and is preferably one that can suppress the warpage of the semiconductor substrate 10 after curing to be extremely small. In the present embodiment, an example is described in which the LED chip 12 emits light in the blue region, absorbs at least a part of the light emitted from the LED chip 12, converts the wavelength, and manufactures an optoelectronic component that emits light. Explain. Here, a fluorescent substance for performing wavelength conversion is mixed in the transparent resin 28.

Here, the fluorescent substance is at least an LED.
A fluorescent substance that emits visible light when excited by visible light emitted from the chip 12. When the visible light emitted from the LED chip 12 and the visible light emitted from the fluorescent substance are in a complementary color relationship, or the like, the visible light from the LED chip 12 and the visible light of the fluorescent substance excited and emitted by the light are respectively emitted from the light. When the three primary colors (light in the red region, light in the green region, and light in the blue region) correspond to each other, the light emitted from the LED chip 12 and the light emitted from the fluorescent material are mixed-colored to display white light emission color. It can be carried out. In addition, by appropriately adjusting the fluorescent substance or selecting the wavelength of the light emitted from the LED chip 12, the light emitted from the optoelectronic component can have an arbitrary color tone such as a light bulb color including white.

The fluorescent substance mixed with the transparent resin 28 includes various substances such as an inorganic fluorescent substance, an organic fluorescent substance, a fluorescent dye and a fluorescent pigment. Specific phosphors include perylene derivatives and yttrium aluminum garnet phosphor activated with cerium (RE _1-x Sm _x ).
_{3 (Al 1-y Ga y} ) 5 O 12: Ce (0 ≦ x <1,0 ≦ y ≦
1, where RE is at least one element selected from the group consisting of Y, Gd, La, Lu, and Sc. ) And the like. The fluorescent substance may be a mixture of two or more fluorescent substances. That is, Al, Ga, Y, La,
And two or more (RE) having different contents of Gd and Sm.
_{1-x Sm x) 3 (} Al 1-y Ga y) 5 O 12: Ce phosphor are mixed can increase the RGB wavelength components.

When printing, first, the semiconductor substrate 10
The stencil is placed in contact with the upper surface of. At this time, the hole formed in the stencil is replaced with the LED formed on the surface of the semiconductor element 10.
Arrange the stencil so as to be above the chip. That is,
The stencil is arranged so that the stencil does not cover the LED chip. Next, the transparent resin 28 is dropped on the stencil, and the squeegee is slid along the surface of the stencil. By sliding the squeegee, the transparent resin 28 flows into the holes formed in the stencil, the upper surface of the transparent resin 28 flowing into the holes becomes the same height as the stencil, and the upper surface becomes flat. . At this time, the sealing resin fills the inside of the groove 26 formed in the semiconductor substrate 10.

The printing performed in step S14 is as follows.
The printing is not limited to only one printing, but may be performed a plurality of times for one semiconductor substrate 10. The printing of the transparent resin 28 is preferably performed under vacuum,
It is not impossible to do it at atmospheric pressure. When printing is performed under atmospheric pressure, it is preferable to perform printing while heating. This is because air bubbles that are caught in the transparent resin 28 during printing are easily removed. Further, when printing the transparent resin 28, it is preferable to use a vacuum printer capable of filling the groove 26 with the transparent resin 28 using a pressure difference.

When the printing of the transparent resin 28 is completed, the printed transparent resin 28 is cured, and after the curing, the sheet 22 attached to the back surface of the semiconductor substrate 10 is peeled off.
The step of polishing the transparent resin 28 until the 20 is exposed is performed (Step S16). FIG. 5B is a cross-sectional view illustrating a state in which the bumps 18 and 20 are exposed by polishing the transparent resin 28. If the transparent resin 28 covers the bumps 18 and 20, the LED chip cannot be electrically connected to an external circuit such as a motherboard, so that this step is performed to expose the bumps 18 and 20 as connection electrodes. Is provided.

In order to cure the applied transparent resin 28, for example, a hot air dryer (not shown) is used to cure the transparent resin 28.
8 by drying. When the transparent resin 28 is cured, the temperature of the hot air dryer is set to 100 to 150 ° C., and the drying time is set to 1 to 3 hours. 5 × 10 ⁵
Pressurizing and curing are performed at least until the transparent resin 28 is gelled at a setting of about 2 × 10 ⁶ pa. Further, in order to further enhance the filling property of the transparent resin 28 in the groove 26, in this step performed after printing, a so-called pressure curing in which the transparent resin 28 is cured by applying a pressure higher than the atmospheric pressure. It is preferred to do so.

When the above steps are completed, a step of applying the transparent resin 30 to the back surface of the semiconductor substrate 10 is performed (step S18). FIG. 5C is a cross-sectional view showing a state where the transparent resin 30 is applied to the back surface of the semiconductor substrate 10. The transparent resin 30 is liquid like the transparent resin 28 described above, and contains a fluorescent substance for wavelength conversion. It is preferable to apply the transparent resin 30 by printing in the same manner as when applying the transparent resin 28,
Further, it is preferable to perform printing under vacuum. Transparent resin 30
Is completed, a step of curing the applied transparent resin 30 is performed (step S20). Here, the transparent resin 2
0 is also cured by drying using a hot air dryer.

When the transparent resin 30 is cured, the process proceeds to step S1.
6, the bumps 18 and 2 exposed on the transparent resin 28
The step of forming the connection ball 32 on the contact 0 is performed (step S22). FIG. 6A is a cross-sectional view showing a state where the connection balls 32 are formed on the bumps 18 and 20. The connection ball 32 has a diameter corresponding to, for example, a pitch at which the bumps 18 and 20 are arranged, and is mounted using a ball mounter (not shown) (not shown).

However, when the pitch at which the bumps 18 and 20 are arranged becomes 0.5 mm or less, the diameter becomes 0.3 mm.
A ball smaller than mm is required. Therefore, when the pitch becomes narrow to this extent, a predetermined amount of solder paste is more accurately mounted on the bumps 18 and 20 than when the connection balls 32 are mounted using a ball mounter, and reflow (not shown). ) Is more preferable to form the connection ball 32. In this case, in order to mount the solder paste on the bumps 18 and 20, it is preferable to mount the solder paste by printing using a predetermined stencil and a squeegee.

Finally, a step of forming the optoelectronic component 38 by cutting the transparent resin 28 and the transparent resin 30 to separate the LED chips 12 individually is performed (step S2).
4). FIG. 6B is a cross-sectional view illustrating a state in which the optoelectronic component 38 is formed by separating the LED chips 12 individually.
In separating the LED chip 12, a sheet 34 is attached to the surface of the transparent resin 30. This sheet 34 is
When the optoelectronic component 38 is obtained by separating the chip 12, the optoelectronic component 38 is attached to prevent the optoelectronic component 38 from being individually separated.

The separation of the LED chips 12 is performed by a dicing device 36. When cutting is performed by the dicing device 36, a substantially central portion of the groove 26 formed in step S12 is cut. Note that a normal dicing device can be used for cutting, but a laser cutting device using a laser may be used. The thickness of the cutting blade of the dicing device is about 5 to 200 μm, and is smaller than the width of the groove 26.

FIG. 6C is a sectional view of the optoelectronic component 38, and FIG. 7 is a perspective view of the optoelectronic component 38. FIG.
As can be seen from FIG. 7C and FIG.
The upper and lower sides and the four side surfaces are all sealed with transparent resins 28 and 30. As described above, the transparent resin 2
A fluorescent material is mixed in 8, 30. The transparent resin 28, 30 surrounds all the upper, lower, and four side surfaces of the optoelectronic component 38. Therefore, the light emitted from the LED chip 18 in all directions is transmitted to the transparent resin 2 mixed with the fluorescent substance.
Since the wavelength is converted after passing through 8, 30, it is convenient when obtaining light of a desired color tone.

The optoelectronic component 38 manufactured by the manufacturing method described above is mounted on a circuit board, for example, in the state shown in FIG. FIG. 8 is a perspective view showing a situation where the optoelectronic component 38 is mounted on a circuit board. As shown in FIG. 8, the optoelectronic component 38 has the surface 4 on which the transparent resin 30 is applied, with the surface on which the connection balls 32 are formed facing the circuit board.
It is implemented with 0 as the upper side. The optoelectronic component 38 includes a conductor pad 42 on which a connection ball 32 is formed on a circuit board.
By being fixed to a and 42b, they are mounted on a circuit board and are electrically connected.

Although the method for manufacturing an optoelectronic component according to one embodiment of the present invention has been described above, the present invention is not limited to the above embodiment, and can be freely modified within the scope of the present invention. For example, in step S12 in the above embodiment,
As shown in FIG. 4C, a sheet 22 is attached to the back surface of the semiconductor substrate 10 and the semiconductor substrate 10 is
The groove 26 extending from the surface of the sheet 22 to the sheet 22 was formed.

However, a groove having a depth of about half the thickness of the semiconductor substrate 10 is formed, the transparent resin 28 is applied and cured, and the transparent resin 28 is polished until the bumps 18 and 20 are exposed. Polished semiconductor substrate 1 by polishing the back surface of substrate 10 until the bottom of the formed groove is exposed.
The transparent resin 30 may be applied to the back surface of the “0”.
Further, the transparent resin 28 is applied to the surface of the semiconductor substrate 10 and cured without forming a groove on the surface of the semiconductor substrate 10,
After polishing the transparent resin 28 until the bumps 18 and 20 are exposed, a groove extending from the back surface of the semiconductor substrate 10 to the transparent resin 28 applied to the surface of the semiconductor substrate 10 is formed. May be applied. In this case, before forming the groove, the back surface of the semiconductor substrate 10 may be polished to adjust the semiconductor substrate 10 to a predetermined thickness.

Further, a step of sealing the optoelectronic component 38 manufactured using the optoelectronic component manufacturing method according to one embodiment of the present invention with a transparent resin may be provided. When the optoelectronic component 38 is sealed with a transparent resin, it is preferable to print the optoelectronic component 38 with a transparent resin using a stencil as disclosed in Japanese Patent Application Laid-Open No. 10-65216. FIG. 9 is a diagram showing a state in which the optoelectronic component 38 is sealed with a transparent resin.

As shown in FIG. 9A, the optoelectronic component 3
Reference numeral 8 denotes conductor pads 46a, 4 formed on the circuit board 44.
The connection balls 32 are fixed to 6b and mounted on the circuit board 44, and are electrically connected to the circuit board 44. The optoelectronic component 38 mounted on the circuit board 44 is sealed by a transparent resin 48 formed in a substantially semicircular shape. As in the case of the transparent resins 28 and 30 described above, the transparent resin 48 may be a mixture of a fluorescent substance or a mixture of no fluorescent substances. Also, the transparent resin 48
Has a lens function by being formed in a substantially semicircular shape. By sealing the optoelectronic component 38 in this manner, the outer shape of the LED including the lens 48 can be reduced in size and thickness.

Further, as shown in FIG. 9B, a configuration may be adopted in which the optoelectronic component 38 is embedded in the substrate 50 and arranged. As shown in FIG. 9B, a hole is formed in the substrate 50, and the electrode pad 52a,
52b are formed. Electrode pads 52a, 52b
Are electrically connected to the wiring 56 formed on the back surface of the substrate 50 via through holes (or via holes) 54a and 54b. The optoelectronic component 38 is arranged in the hole in which the electrode pads 52a and 52b are formed, and the connection ball 3
2 and the electrode pads 52a, 52b are fixed, so that the optoelectronic component 38 is mounted on the substrate 50,
The electrical connection is made with the wiring 56 formed on the back surface of the substrate 50. Then, the optoelectronic component 38 is sealed by filling the transparent resin 48 into the hole formed in the substrate 50.

FIG. 10 is a top view of an LED formed by sealing optoelectronic components for emitting light in the red, green, and blue regions, respectively. FIG. FIG. 3B is a top view of an LED formed by applying the present invention. As shown in FIG. 10A, a conventional LED includes an optoelectronic component 60R that emits light in a red region, an optoelectronic component 60G that emits light in a green region, and an optoelectronic device that emits light in a blue region on electrodes 62R, 62G, and 62B. The components 60B are respectively arranged, and the optoelectronic components 60R, 6R
0G, 60B and the electrode 64 are connected to the wire lines 66R, 6R.
6G and 66B, respectively.

Conventional optoelectronic components 60R, 60G, 60B
Indicates that the electrodes are formed on the lower surface and the upper surface.
2R, 62G, 62B, and a wire 66
R, 66G, and 66B had to be used to connect to the electrodes. A circle C1 shown in FIG. 10A indicates a diameter of a lens formed of a transparent resin. As can be seen from FIG. 10A, since the wiring of the electrodes 62R, 62G, 62B and the electrode 64 has been limited in the past, the diameter C1 of the lens was necessarily large.

As shown in FIG. 10B, in the LED to which the present invention is applied, both the positive electrode and the negative electrode
Since it is formed on one surface of R, 70G, 70B, an optoelectronic component 70R that emits light in the red region, an optoelectronic component 70G that emits light in the green region, and an optoelectronic component 70G that emits light in the blue region Optoelectronic component 70 that emits light
B can be arranged. As a result, FIG.
(B) As shown by the reference symbol C2, the diameter of the lens can be reduced.

In the embodiment described above, the LED is described as an example. However, the present invention relates to a light receiving element that converts light energy into electric energy and a light emitting element that converts electric energy into light energy. The present invention can be applied to all manufacturing of optoelectronic components manufactured by sealing with a resin.

[0042]

As described above, according to the present invention,
There is an effect that small and thin optoelectronic components can be mass-produced at low cost and per unit time.

[Brief description of the drawings]

FIG. 1 is a flowchart showing a process sequence of a method for manufacturing an optoelectronic component according to an embodiment of the present invention.

FIG. 2 is a perspective view showing a semiconductor substrate on which LED chips as a plurality of optoelectronic component elements are formed.

FIG. 3 is an enlarged top view of a semiconductor substrate surface on which a plurality of LED chips are formed.

FIG. 4 is a cross-sectional view for explaining how an electronic component is manufactured using the electronic component manufacturing method according to one embodiment of the present invention.

FIG. 5 is a cross-sectional view for explaining how an electronic component is manufactured using the electronic component manufacturing method according to one embodiment of the present invention.

FIG. 6 is a cross-sectional view for explaining how an electronic component is manufactured using the electronic component manufacturing method according to one embodiment of the present invention.

7 is a perspective view of the optoelectronic component 38. FIG.

FIG. 8 is a perspective view showing a situation where the optoelectronic component 38 is mounted on a circuit board.

FIG. 9 is a diagram showing a state in which the optoelectronic component 38 is sealed with a transparent resin.

FIG. 10 is a top view of an LED formed by sealing optoelectronic components that respectively emit light in a red region, light in a green region, and light in a blue region, and (a) is a top view of an LED having a conventional configuration. And (b) shows an LE formed by applying the present invention.
It is a top view of D.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 10 Substrate (semiconductor substrate) 12 LED chip (optoelectronic component element) 18, 20 Bump (connection electrode) 26 Groove 28, 30 Transparent resin 32 Connection ball 38 Optoelectronic component

──────────────────────────────────────────────────の Continued on the front page (51) Int.Cl. ⁷ Identification symbol FI Theme coat ゛ (Reference) H01L 31/02 H01L 31/02 B 33/00 F term (Reference) 4M109 AA02 BA07 CA12 EA01 EC11 EE12 GA01 5F041 AA21 AA42 AA47 CA93 DA16 DA55 5F061 AA02 BA07 CA12 CB02 CB13 FA01 5F088 BA15 BA18 FA09 FA20 JA02 JA06 JA20

Claims (11)

[Claims] A groove forming step of forming a groove on a substrate surface on which a plurality of optoelectronic component elements are formed and a connection electrode is formed for each of the optoelectronic component elements; and a transparent resin on the substrate surface on which the groove is formed. First to apply
An optoelectronic component, comprising: a coating step; a second coating step of coating a transparent resin on the back surface of the substrate; and a separation step of cutting a position where the groove is formed and separating the optoelectronic component into individual optoelectronic components. Manufacturing method. 2. A first coating step of coating a transparent resin on a surface of a substrate on which a plurality of optoelectronic component elements are formed and a connection electrode is formed for each of the optoelectronic component elements; and a groove for forming a groove on the back surface of the substrate. An optoelectronic component, comprising: a forming step; a second application step of applying a transparent resin to the back surface of the substrate; and a separation step of cutting a position where the groove is formed and separating the optoelectronic component into individual optoelectronic components. Manufacturing method. 3. The method according to claim 1, wherein said groove is formed between optoelectronic component elements formed on said substrate. 4. The method for manufacturing an optoelectronic component according to claim 1, wherein said optoelectronic component device emits light in a blue region. 5. The transparent resin according to claim 1, wherein the transparent resin includes a fluorescent substance that absorbs at least a part of light emitted from the optoelectronic component element, converts the wavelength, and emits light. A method for producing an optoelectronic component according to claim 1. 6. The method according to claim 1, wherein in the first applying step, the transparent resin is applied by stencil printing under vacuum. 7. The method for manufacturing an optoelectronic component according to claim 1, further comprising a curing step of curing the sealing resin applied in the first application step. . 8. The method according to claim 1, further comprising, between the first applying step and the second applying step, a polishing step of exposing the connection electrode by polishing the resin applied to the substrate surface in the first applying step. The method for manufacturing an optoelectronic component according to claim 1. 9. The method for manufacturing an optoelectronic component according to claim 1, further comprising a curing step of curing the sealing resin applied in the second application step. . 10. The optoelectronic component according to claim 1, further comprising a connection ball forming step of forming a connection ball on the connection electrode before the separation step. Manufacturing method. 11. A process for sealing an optoelectronic component manufactured by using the optoelectronic component manufacturing method according to claim 1 using a transparent resin. Characteristic optoelectronic component manufacturing method.