CN115452280A - Method and device for detecting leakage rate of reaction cavity of semiconductor process equipment - Google Patents

Method and device for detecting leakage rate of reaction cavity of semiconductor process equipment Download PDF

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Publication number
CN115452280A
CN115452280A CN202211165643.2A CN202211165643A CN115452280A CN 115452280 A CN115452280 A CN 115452280A CN 202211165643 A CN202211165643 A CN 202211165643A CN 115452280 A CN115452280 A CN 115452280A
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reaction cavity
pressure value
air pressure
process equipment
semiconductor process
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厉冰峰
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Shengjisheng Semiconductor Technology Shanghai Co ltd
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Shengjisheng Semiconductor Technology Shanghai Co ltd
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01M—TESTING STATIC OR DYNAMIC BALANCE OF MACHINES OR STRUCTURES; TESTING OF STRUCTURES OR APPARATUS, NOT OTHERWISE PROVIDED FOR
    • G01M3/00—Investigating fluid-tightness of structures
    • G01M3/02—Investigating fluid-tightness of structures by using fluid or vacuum
    • G01M3/26—Investigating fluid-tightness of structures by using fluid or vacuum by measuring rate of loss or gain of fluid, e.g. by pressure-responsive devices, by flow detectors
    • G01M3/32—Investigating fluid-tightness of structures by using fluid or vacuum by measuring rate of loss or gain of fluid, e.g. by pressure-responsive devices, by flow detectors for containers, e.g. radiators

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  • General Physics & Mathematics (AREA)
  • Examining Or Testing Airtightness (AREA)

Abstract

The invention discloses a leak rate detection method and a leak rate detection device for a reaction cavity of semiconductor process equipment, wherein the method comprises the following steps: vacuumizing a reaction cavity of the semiconductor process equipment so that the air pressure value of the reaction cavity is in a preset air pressure value; controlling semiconductor process equipment to be in a preset running state; when the semiconductor process equipment is in a preset operation state and reaches a preset time length, detecting a current air pressure value in the reaction cavity; and calculating the leakage rate of the reaction cavity according to the current air pressure value and the preset air pressure value. The invention solves the problems that the leak rate of the reaction cavity of the semiconductor process equipment adopts static test, so that the air tightness of the reaction cavity of the semiconductor process equipment cannot be truly and accurately reflected, and the reject ratio of a silicon wafer is improved.

Description

Method and device for detecting leakage rate of reaction cavity of semiconductor process equipment
Technical Field
The invention relates to the technical field of semiconductor manufacturing, in particular to a leak rate detection method and a leak rate detection device for a reaction cavity of semiconductor process equipment.
Background
Airtightness is the property of representing the prevention of gas permeation of a vacuum system, and has particularly high requirements on the airtightness of a reaction cavity in the production of a semiconductor chemical vapor deposition process. The gas leakage can affect the reaction pressure, the gas flow distribution and the like and generate impurity particles, thereby causing the abnormality and even the abandonment of the semiconductor process silicon chip. The sealing performance of the reaction cavity is generally calibrated by 'leakage rate', and the smaller the leakage rate is, the better the sealing performance is.
In the traditional process, the leak rate test is only carried out after the reaction cavity is maintained, or the shutdown test is carried out for troubleshooting after the process is abnormal, but the silicon wafers can be produced by thousands of wafers in one maintenance period, and a machine table cannot reflect the leak rate condition in daily production operation, so that the products have potential quality risks. And usually only static tests are used (no part moves after the air inlet valve and the air outlet valve are closed), but the carrier moves (up and down or rotates and the like) in the reaction chamber during the semiconductor chemical vapor deposition process, and in some cases, no air leakage exists in a static state, but air leakage problems can occur after mechanical movement. Therefore, the traditional leak detection mode cannot accurately detect the air leakage problem in time, thereby causing the product quality problem.
Disclosure of Invention
The invention aims to provide a method and a device for detecting the leakage rate of a reaction cavity of semiconductor process equipment, so as to solve the problems that the air tightness of the reaction cavity of the semiconductor process equipment cannot be truly and accurately reflected and the reject ratio of a silicon wafer is improved because a static test is adopted for detecting the leakage rate of the reaction cavity of the semiconductor process equipment.
In order to solve the above technical problem, according to an aspect of the present invention, a method for detecting a leak rate of a reaction chamber of semiconductor processing equipment is provided, including:
vacuumizing a reaction cavity of semiconductor process equipment so that the air pressure value of the reaction cavity is in a preset air pressure value;
controlling the semiconductor process equipment to be in a preset operation state;
when the preset running state of the semiconductor process equipment reaches a preset time length, detecting the current air pressure value in the reaction cavity;
and calculating the leakage rate of the reaction cavity according to the current air pressure value and the preset air pressure value.
In some embodiments, the method for detecting a leak rate of a reaction chamber of semiconductor processing equipment further comprises:
detecting whether the semiconductor process equipment completes a preset operation program or not;
and if so, performing the step of vacuumizing the reaction cavity of the semiconductor process equipment so as to enable the air pressure value of the reaction cavity to be at a preset air pressure value.
In some embodiments, the preset operating program of the semiconductor process equipment is a cleaning program;
and after the cleaning procedure is finished, performing the step of vacuumizing the reaction cavity of the semiconductor process equipment so as to enable the air pressure value of the reaction cavity to be at a preset air pressure value.
In some embodiments, the step of controlling the semiconductor processing equipment to be in the preset operating state comprises:
and controlling the carrying platform of the semiconductor process equipment to operate according to preset actions.
In some embodiments, the step of evacuating the reaction chamber of the semiconductor processing apparatus to make the pressure value of the reaction chamber be at a preset pressure value includes:
closing an air inlet valve of the reaction cavity, opening an exhaust valve of the reaction cavity, and vacuumizing the reaction cavity;
and when the air pressure value in the reaction cavity reaches the preset air pressure value, closing the exhaust valve to keep the air pressure value in the reaction cavity at the preset air pressure value.
According to another aspect of the present invention, there is provided a leak rate detection apparatus for a reaction chamber of semiconductor processing equipment, comprising:
the vacuumizing module is configured for vacuumizing a reaction cavity of the semiconductor process equipment so as to enable the air pressure value of the reaction cavity to be at a preset air pressure value;
the control module is configured to control the semiconductor process equipment to be in a preset operation state;
the detection module is configured to detect a current air pressure value in the reaction cavity when the preset operation state of the semiconductor process equipment reaches a preset duration;
and the calculation module is configured to calculate the leakage rate of the reaction cavity according to the current air pressure value and the preset air pressure value.
In some embodiments, the detection module is further configured to:
detecting whether the semiconductor process equipment completes a preset operation program or not;
the vacuumizing module is configured to vacuumize the reaction cavity when the semiconductor process equipment completes the preset operation program.
In some embodiments, the predetermined operating program of the semiconductor processing equipment is a cleaning program;
the vacuumizing module is configured to vacuumize the reaction cavity after the cleaning procedure is completed.
In some embodiments, the control module is specifically configured to:
and controlling the carrying platform of the semiconductor process equipment to operate according to preset actions.
In some embodiments, the evacuation module comprises:
the vacuumizing unit is configured to close an air inlet valve of the reaction cavity, open an air outlet valve of the reaction cavity and vacuumize the reaction cavity;
and the pressure maintaining unit is configured to close the exhaust valve when the air pressure value in the reaction cavity reaches the preset air pressure value, so that the air pressure value in the reaction cavity is kept at the preset air pressure value.
Compared with the prior art, the invention has obvious advantages and beneficial effects. By means of the technical scheme, the method and the device for detecting the leakage rate of the reaction cavity of the semiconductor process equipment can achieve considerable technical progress and practicability, have wide industrial utilization value and at least have the following advantages:
(1) In the process of detecting the leakage rate of the reaction cavity of the semiconductor process equipment, the semiconductor process equipment is controlled to operate according to the preset operation state, namely the semiconductor process equipment is still in the operation state in the normal manufacturing process when the leakage rate is detected, so that the leakage rate detection is more consistent with the real condition, the authenticity and the accuracy of the leakage rate detection of the reaction cavity of the semiconductor process equipment are ensured, and the reject ratio of the silicon wafer caused by the air tightness problem is further reduced.
(2) When the semiconductor process equipment is detected to be in the preset operation program, the leakage rate detection of the semiconductor process equipment is started, so that the condition that the leakage rate detection of the semiconductor process equipment is not timely caused by the fact that the leakage rate detection needs to be carried out when the equipment is overhauled or the equipment is abnormal is avoided, the timeliness of the leakage rate detection of a reaction cavity of the semiconductor process equipment is improved, the equipment does not need to be stopped for a long time, and the operation efficiency of the equipment is ensured.
The foregoing description is only an overview of the technical solutions of the present invention, and in order to make the technical means of the present invention more clearly understood, the present invention may be implemented in accordance with the content of the description, and in order to make the above and other objects, features, and advantages of the present invention more clearly understood, the following preferred embodiments are described in detail with reference to the accompanying drawings.
Drawings
FIG. 1 is a schematic flow chart of a method for detecting a leak rate of a reaction chamber of semiconductor processing equipment according to an embodiment of the present invention;
FIG. 2 is a block diagram schematically illustrating the structure of a reaction chamber of a semiconductor processing apparatus according to an embodiment of the present invention;
FIG. 3 is a schematic block diagram of a leak rate detection apparatus for a reaction chamber of semiconductor processing equipment in accordance with an embodiment of the present invention;
figure 4 shows a schematic block diagram of the evacuation module shown in figure 3.
Detailed Description
In order to further explain the present invention, the following detailed description will be made with reference to the accompanying drawings for a method and an apparatus for detecting a leak rate of a reaction chamber of semiconductor processing equipment according to the present invention.
As shown in fig. 1, an embodiment of the present invention provides a method for detecting a leak rate of a reaction chamber of semiconductor processing equipment, including:
and S20, vacuumizing a reaction cavity of the semiconductor process equipment so that the air pressure value of the reaction cavity is in a preset air pressure value.
Specifically, before detecting the leakage rate of the reaction cavity of the semiconductor process equipment, the gas in the reaction cavity of the semiconductor process equipment needs to be pumped out, that is, the reaction cavity of the semiconductor process equipment needs to be vacuumized, so that the pressure value in the reaction cavity of the semiconductor process equipment reaches the preset pressure value.
It will be appreciated that, based on the prior art and means, it is not possible or very difficult to achieve a complete vacuum within the reaction chamber. Therefore, the evacuation described in the present invention is not to make the reaction chamber in a complete vacuum state, but to make the air pressure value in the reaction chamber reach the preset air pressure value.
The preset air pressure value may be set according to the precision of the device, the use environment, and the like, and the preset air pressure value is not specifically limited in the present invention.
In one embodiment, as shown in fig. 2, an inlet valve 2 and an outlet valve 3 are disposed on a reaction chamber 1 of a semiconductor processing apparatus, one end of the outlet valve 3 is connected to the reaction chamber 1, and the other end is connected to a pump 4 for pumping gas from the reaction chamber 1. A carrying platform 5 is arranged in the reaction cavity 1 and is used for carrying the silicon wafer put in the reaction cavity 1. The barometer 6 is connected to the reaction chamber 1 for detecting the pressure in the reaction chamber 1.
In this embodiment, step S20 specifically includes: closing an air inlet valve of the reaction cavity, opening an exhaust valve of the reaction cavity, and vacuumizing the reaction cavity; and when the air pressure value in the reaction cavity reaches the preset air pressure value, closing the exhaust valve to keep the air pressure value in the reaction cavity at the preset air pressure value.
Specifically, when the leak rate of the reaction cavity of the semiconductor process equipment is detected, the air inlet valve arranged on the reaction cavity is closed, the exhaust valve is opened, and the reaction cavity is vacuumized by the pump connected to the exhaust valve. In the process of vacuumizing the reaction cavity, the air pressure value in the reaction cavity is detected through an air pressure meter connected in the reaction cavity, and when the air pressure value in the reaction cavity reaches a preset air pressure value, air suction is stopped and the exhaust valve is closed, so that the air pressure in the reaction cavity is kept at the preset air pressure value.
And step S30, controlling the semiconductor process equipment to be in a preset running state.
It is known that there is a difference in the effect on the gas tightness of the reaction chamber when the semiconductor process equipment is in operation as compared to when the semiconductor process equipment is in a quiescent state. When the leak rate of the reaction cavity of the semiconductor process equipment is detected, the authenticity and the accuracy of the leak rate detection can be influenced when the semiconductor process equipment is in a static state.
Therefore, when the leakage rate of the reaction cavity of the semiconductor process equipment is detected, the semiconductor process equipment is controlled to be always in the preset running state, namely, when the leakage rate of the reaction cavity of the semiconductor process equipment is detected, the semiconductor process equipment is always in the simulated running state, so that the semiconductor process equipment can be more practically attached to ensure the authenticity and the accuracy of the leakage rate detection of the reaction cavity of the semiconductor process equipment.
In an embodiment, the preset operation state refers to an operation state of a carrier in a reaction chamber of the semiconductor processing equipment. For example, by controlling the stage to rotate or to move up and down, or by controlling both the stage to rotate and to move up and down. Therefore, the real running state of the semiconductor process equipment is simulated, so that the leakage rate detection of the reaction cavity of the semiconductor process equipment is more fit with the actual situation.
And S40, detecting the current air pressure value in the reaction cavity when the semiconductor process equipment is in the preset operation state and reaches the preset duration.
Specifically, after the reaction cavity of the semiconductor process equipment is vacuumized and the semiconductor process equipment is controlled to operate for a preset time according to a preset operation state, the current air pressure value in the reaction cavity of the semiconductor process equipment is detected through the barometer.
The preset time duration of the embodiment can be set according to the environment of the semiconductor process equipment, the precision of the equipment and the like, and the invention is not limited to the specific time duration.
And S50, calculating the leakage rate of the reaction cavity according to the current air pressure value and the preset air pressure value.
And respectively acquiring the current air pressure value in the reaction cavity detected after controlling the semiconductor process equipment to operate for a preset time according to a preset operation state, and controlling the air pressure value in the reaction cavity to reach the preset air pressure value when vacuumizing the reaction cavity of the semiconductor process equipment.
And calculating the leakage rate of the reaction cavity of the semiconductor process equipment according to the change value of the current air pressure value compared with the preset air pressure value.
In one embodiment, as shown in fig. 1, a step S10 is further included before the step S20. The step S10 is to detect whether the semiconductor process equipment completes a preset operation procedure.
If it is detected that the semiconductor process equipment completes the preset operation procedure (i.e., after the operation of the preset operation procedure is finished), step S20 is executed. If it is detected that the semiconductor process equipment does not complete the preset operation program, the step S10 is repeatedly executed.
In general, the leak rate of the reaction chamber of the semiconductor process equipment is detected when the equipment is maintained or fails, so that the timeliness of leak rate detection cannot be guaranteed, and the yield of the silicon wafer is affected.
The method and the device detect the leakage rate of the reaction cavity of the semiconductor process equipment when the semiconductor process equipment is in a normal operation process (namely, the preset operation program is finished), do not influence the normal operation of the semiconductor process equipment, and can ensure the timeliness of the leakage rate detection.
It is known that during operation of semiconductor processing equipment, particularly thin film deposition processes, deposition of films on the walls of the reaction chamber, electrodes, etc. also occurs. Therefore, after the semiconductor processing equipment runs for a certain period of time, a cleaning procedure is required to remove the film deposited in the reaction chamber, so as to ensure the cleanness of the reaction chamber.
Based on this, the detection of the leak rate of the reaction chamber of the semiconductor processing equipment is set after the cleaning procedure (i.e. the preset operation procedure) is completed. And the leakage rate detection is carried out after the cleaning program is finished, namely, the machine does not need to be stopped independently for the leakage rate detection, and the timeliness of the leakage rate detection can be ensured.
The detection of the leakage rate is set after the cleaning procedure is finished, and when the cleaning procedure of the semiconductor process equipment is detected to be finished, the step S20 is controlled to be executed so as to finish the detection of the leakage rate of the reaction cavity of the semiconductor process equipment.
As shown in fig. 3, an embodiment of the present invention further provides a leak rate detection apparatus for a reaction chamber of semiconductor processing equipment, including: the vacuum pumping module 10, the control module 20, the detection module 30 and the calculation module 40.
The vacuum pumping module 10 is configured to pump vacuum to a reaction chamber of the semiconductor processing equipment, so that the pressure value of the reaction chamber is at a preset pressure value.
Specifically, before detecting the leakage rate of the reaction cavity of the semiconductor process equipment, the vacuum pumping module 10 needs to pump out the gas in the reaction cavity of the semiconductor process equipment, that is, to perform vacuum pumping on the reaction cavity of the semiconductor process equipment, so that the gas pressure value in the reaction cavity of the semiconductor process equipment reaches the preset gas pressure value.
It can be understood that, based on the prior art and means, it is not possible to achieve a complete vacuum in the reaction chamber. Therefore, the evacuation described in the present invention is not to make the reaction chamber in a complete vacuum state, but to make the air pressure value in the reaction chamber reach the preset air pressure value.
The preset air pressure value may be set according to the precision of the device, the use environment, and the like, and the preset air pressure value is not specifically limited in the present invention.
In one embodiment, as shown in fig. 2, an inlet valve and an outlet valve are disposed on a reaction chamber of a semiconductor processing apparatus, and one end of the outlet valve is connected to the reaction chamber and the other end is connected to a pump for pumping gas from the reaction chamber. A carrying platform is arranged in the reaction cavity and used for carrying the silicon wafer placed in the reaction cavity. The barometer is connected in the reaction cavity and used for detecting the air pressure value in the reaction cavity.
In this embodiment, as shown in fig. 4, the evacuation module 10 specifically includes an evacuation unit 101 and a pressure holding unit 102.
The vacuum pumping unit 101 is configured to close an intake valve of the reaction chamber and open an exhaust valve of the reaction chamber to evacuate the reaction chamber. The pressure maintaining unit 102 is configured to close the exhaust valve when the pressure value in the reaction chamber reaches a preset pressure value, so that the pressure value in the reaction chamber is maintained at the preset pressure value.
Specifically, when the leak rate of the reaction chamber of the semiconductor processing equipment is detected, the vacuum pumping unit 101 first closes the intake valve provided on the reaction chamber, opens the exhaust valve, and pumps the reaction chamber through the pump connected to the exhaust valve. In the process of vacuumizing the reaction cavity, the air pressure value in the reaction cavity is detected through an air pressure meter connected in the reaction cavity, and when the air pressure value in the reaction cavity reaches a preset air pressure value, the pressure maintaining unit 102 controls to stop air suction and close the exhaust valve so as to keep the air pressure in the reaction cavity at the preset air pressure value.
The control module 20 is configured to control the semiconductor processing equipment to a preset operating state.
It is known that there is a difference in the effect on the gas tightness of the reaction chamber when the semiconductor process equipment is in operation as compared to when the semiconductor process equipment is in a quiescent state. When the leak rate of the reaction cavity of the semiconductor process equipment is detected, the authenticity and the accuracy of the leak rate detection can be influenced when the semiconductor process equipment is in a static state.
Based on this, when the invention detects the leakage rate of the reaction cavity of the semiconductor process equipment, the control module 20 controls the semiconductor process equipment to be always in the preset operation state, that is, when the invention detects the leakage rate of the reaction cavity of the semiconductor process equipment, the semiconductor process equipment is always in the simulation operation state, so that the invention can be more practically attached to ensure the authenticity and the accuracy of the leakage rate detection of the reaction cavity of the semiconductor process equipment.
In an embodiment, the predetermined operating state refers to an operating state of a stage in a reaction chamber of the semiconductor processing equipment. For example, by controlling the stage to rotate or to move up and down, or by controlling both the stage to rotate and to move up and down. Therefore, the real running state of the semiconductor process equipment is simulated, and the leakage rate detection of the reaction cavity of the semiconductor process equipment is more fit with the actual situation.
The detection module 30 is configured to detect a current pressure value in the reaction chamber when the semiconductor process equipment is in a preset operating state for a preset duration.
Specifically, after the reaction chamber of the semiconductor process equipment is vacuumized and the semiconductor process equipment is controlled to operate for a preset time duration according to a preset operation state, the detection module 30 detects a current air pressure value in the reaction chamber of the semiconductor process equipment through the barometer.
The preset time duration of the embodiment can be set according to the environment of the semiconductor process equipment, the precision of the equipment and the like, and the invention is not limited to the specific time duration.
The calculation module 40 is configured to calculate a leakage rate of the reaction cavity according to the current air pressure value and the preset air pressure value.
Respectively obtaining the current air pressure value in the reaction cavity detected after the control module 20 controls the semiconductor process equipment to operate for a preset time according to a preset operation state, and controlling the air pressure value in the reaction cavity to reach the preset air pressure value when the reaction cavity of the semiconductor process equipment is vacuumized.
The calculating module 40 calculates the leakage rate of the reaction chamber of the semiconductor processing equipment according to the change value of the current air pressure value compared with the preset air pressure value.
In one embodiment, the detection module 30 is further configured to: and detecting whether the semiconductor process equipment completes a preset operation program. The evacuation module 10 is configured to evacuate the reaction chamber when the semiconductor process equipment completes a preset operation procedure.
In general, the leak rate of the reaction chamber of the semiconductor process equipment is detected when the equipment is maintained or fails, so that the timeliness of leak rate detection cannot be guaranteed, and the yield of the silicon wafer is affected.
The method and the device detect the leakage rate of the reaction cavity of the semiconductor process equipment when the semiconductor process equipment is in a normal operation process (namely, the preset operation program is finished), do not influence the normal operation of the semiconductor process equipment, and can ensure the timeliness of the leakage rate detection.
It is known that during operation of semiconductor processing equipment, particularly thin film deposition processes, deposition of films on the walls of the reaction chamber, electrodes, etc. also occurs. Therefore, after the semiconductor processing equipment is operated for a certain period of time, a cleaning procedure is required to remove the film deposited in the reaction chamber, so as to ensure the cleanness of the reaction chamber.
Based on this, the detection of the leak rate of the reaction chamber of the semiconductor processing equipment is set after the cleaning procedure (i.e. the preset operation procedure) is completed. And the leakage rate detection is carried out after the cleaning program is finished, namely, the machine does not need to be stopped independently for the leakage rate detection, and the timeliness of the leakage rate detection can be ensured.
The detection of the leakage rate is set after the cleaning procedure is completed, and when the detection module 30 detects that the cleaning procedure of the semiconductor process equipment is completed, the vacuumizing module 10 controls the reaction cavity of the semiconductor process equipment to be vacuumized so as to complete the detection of the leakage rate of the reaction cavity of the semiconductor process equipment.
Although the present invention has been described with reference to the preferred embodiments, it will be understood by those skilled in the art that various changes may be made and equivalents may be substituted for elements thereof without departing from the scope of the present invention.

Claims (10)

1. A method for detecting the leakage rate of a reaction cavity of semiconductor process equipment is characterized by comprising the following steps:
vacuumizing a reaction cavity of semiconductor process equipment so that the air pressure value of the reaction cavity is in a preset air pressure value;
controlling the semiconductor process equipment to be in a preset operation state;
when the preset running state of the semiconductor process equipment reaches a preset duration, detecting a current air pressure value in the reaction cavity;
and calculating the leakage rate of the reaction cavity according to the current air pressure value and the preset air pressure value.
2. The method of claim 1, further comprising:
detecting whether the semiconductor process equipment completes a preset operation program or not;
and if so, performing the step of vacuumizing the reaction cavity of the semiconductor process equipment so as to enable the air pressure value of the reaction cavity to be at a preset air pressure value.
3. The method of claim 2, wherein the predetermined operating program of the semiconductor processing equipment is a cleaning program;
and after the cleaning procedure is finished, performing the step of vacuumizing the reaction cavity of the semiconductor process equipment so as to enable the air pressure value of the reaction cavity to be at a preset air pressure value.
4. The method of any one of claims 1 to 3, wherein the step of controlling the semiconductor processing equipment to be in a predetermined operating state comprises:
and controlling the carrying platform of the semiconductor process equipment to operate according to a preset action.
5. The method of claim 1, wherein the step of evacuating the reaction chamber of the semiconductor processing equipment so that the pressure of the reaction chamber is at a predetermined pressure comprises:
closing an air inlet valve of the reaction cavity, opening an exhaust valve of the reaction cavity, and vacuumizing the reaction cavity;
and when the air pressure value in the reaction cavity reaches the preset air pressure value, closing the exhaust valve to keep the air pressure value in the reaction cavity at the preset air pressure value.
6. A leak rate detection device of a reaction cavity of semiconductor process equipment is characterized by comprising:
the vacuumizing module is configured for vacuumizing a reaction cavity of the semiconductor process equipment so as to enable the air pressure value of the reaction cavity to be at a preset air pressure value;
the control module is configured to control the semiconductor process equipment to be in a preset operation state;
the detection module is configured to detect a current air pressure value in the reaction cavity when the preset operation state of the semiconductor process equipment reaches a preset duration;
and the calculation module is configured to calculate the leakage rate of the reaction cavity according to the current air pressure value and the preset air pressure value.
7. The apparatus of claim 6, wherein the detection module is further configured to:
detecting whether the semiconductor process equipment completes a preset operation program or not;
the vacuumizing module is configured to vacuumize the reaction cavity when the semiconductor process equipment completes the preset operation program.
8. The apparatus of claim 7, wherein the predetermined operating program of the semiconductor processing equipment is a cleaning program;
the vacuumizing module is configured to vacuumize the reaction cavity after the cleaning procedure is completed.
9. The apparatus of any of claims 6-8, wherein the control module is specifically configured to:
and controlling the carrying platform of the semiconductor process equipment to operate according to a preset action.
10. The apparatus of claim 6, wherein the evacuation module comprises:
the vacuumizing unit is configured to close an air inlet valve of the reaction cavity, open an air outlet valve of the reaction cavity and vacuumize the reaction cavity;
and the pressure maintaining unit is configured to close the exhaust valve when the air pressure value in the reaction cavity reaches the preset air pressure value, so that the air pressure value in the reaction cavity is kept at the preset air pressure value.
CN202211165643.2A 2022-09-23 2022-09-23 Method and device for detecting leakage rate of reaction cavity of semiconductor process equipment Pending CN115452280A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202211165643.2A CN115452280A (en) 2022-09-23 2022-09-23 Method and device for detecting leakage rate of reaction cavity of semiconductor process equipment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202211165643.2A CN115452280A (en) 2022-09-23 2022-09-23 Method and device for detecting leakage rate of reaction cavity of semiconductor process equipment

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CN115452280A true CN115452280A (en) 2022-12-09

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