KR20080086172A - Method for detecting valve leak at the semiconductor device manufacture equipment - Google Patents

Method for detecting valve leak at the semiconductor device manufacture equipment Download PDF

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Publication number
KR20080086172A
KR20080086172A KR1020070027982A KR20070027982A KR20080086172A KR 20080086172 A KR20080086172 A KR 20080086172A KR 1020070027982 A KR1020070027982 A KR 1020070027982A KR 20070027982 A KR20070027982 A KR 20070027982A KR 20080086172 A KR20080086172 A KR 20080086172A
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South Korea
Prior art keywords
valve
main
gas
cleaning gas
gas valve
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KR1020070027982A
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Korean (ko)
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기기태
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삼성전자주식회사
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Priority to KR1020070027982A priority Critical patent/KR20080086172A/en
Publication of KR20080086172A publication Critical patent/KR20080086172A/en

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • General Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

The present invention discloses a valve leak detection method of a semiconductor manufacturing facility that can increase or maximize production yield and productivity. The method includes sequentially checking and acting on leaks of the main gas supply valve, the main cleaning gas valve, and the sub cleaning gas valve, which are formed to intermittently regulate the flow of the cleaning gas supplied through the supply line communicating with the chamber, and the chamber The main reaction gas valve formed to intermittently regulate the flow of the reaction gas supplied therein, and the leaks of the sub reaction gas valves are sequentially checked and reacted to react through the main cleaning gas valve when the leak of the main reaction gas valve is confirmed. It can improve the production yield because it can prevent the contaminants such as powder caused by the back flow of gas.

Description

Method for detecting valve leak at the semiconductor device manufacture equipment}

1 is a diagram schematically showing a semiconductor manufacturing apparatus of the present invention.

2 to 6 are diagrams for explaining a valve leak detection method of a semiconductor manufacturing apparatus according to an embodiment of the present invention.

Explanation of symbols on the main parts of the drawings

10 process chamber 20 exhaust part

30: gas supply unit 32: gas supply line

34: main gas supply line 36: main reaction gas valve

38: main cleaning gas valve 40: reaction gas supply unit

50: cleaning gas supply unit 60: purge gas supply unit

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor manufacturing facility, and more particularly, to a valve leak detection method of a semiconductor manufacturing facility for forming a thin film using a chemical vapor deposition method.

Recently, in the semiconductor manufacturing industry, the minimum line width applied to the semiconductor integrated circuit process has been steadily decreasing to increase the operation speed of the semiconductor chip and increase the information storage capability per unit area. In addition, the size of semiconductor devices such as transistors integrated on semiconductor wafers has been reduced to sub-half microns or less.

Such a semiconductor device may be manufactured through a deposition process, a photo process, an etching process, and a diffusion process, and at least one semiconductor device may be formed when these processes are repeated several times several times. In particular, the deposition process is an essential process requiring improvement in the reproducibility and reliability of semiconductor device fabrication, such as a sol-gel method, a sputtering method, an electroplating method, and an evaporation method. , A process of forming the processed film on the wafer by a chemical vapor deposition method, a molecular beam epitaxy method, an atomic layer deposition method, or the like.

Among them, the chemical vapor deposition method is most commonly used because of the excellent deposition characteristics and the uniformity of the processed film formed on the wafer than other deposition methods. Such chemical vapor deposition methods may be divided into low pressure chemical vapor deposition (LPCVD), atmospheric pressure chemical vapor deposition (APCVD), low temperature chemical vapor deposition (LTCVD), plasma enhanced chemical vapor deposition (PECVD), and the like.

In order to increase productivity, semiconductor manufacturing equipment used in various kinds of chemical vapor deposition methods is mainly performed in-situ cleaning process of cleaning reaction by-products generated in the chamber by a plasma reaction in a vacuum state. Accordingly, a cleaning gas is alternately supplied into the chamber along with a plurality of process gases through a gas supply line connected to the chamber. At this time, the semiconductor manufacturing equipment is formed such that the flow of the reaction gas and the cleaning gas is interrupted by a plurality of valves.

Although not shown, a plurality of sub-reaction gas valves and a plurality of sub-cleaning gas valves are formed in a gas supply line connected to the raw material tank or the source so as to separately control the flow of the plurality of reaction gases and the clean-up gas. A main reaction gas valve and a main cleaning gas valve are formed at a portion where the two sub-reaction gas valves and the gas supply lines respectively connected to the plurality of sub-removal gas valves are merged into one, the main reaction gas valve and the main cleaning A gas supply line connected to the gas valve is merged to form a main supply valve at a portion connected to the chamber. At this time, the flow rate of the reaction gas must be precisely controlled due to the characteristics of the semiconductor manufacturing equipment in which the deposition process is performed by the chemical vapor deposition method, so each valve must be checked for leaks at a predetermined process time.

However, a method of confirming the presence or absence of the plurality of valve leaks by combining opening and closing of a plurality of valves provided in the semiconductor manufacturing facility has not been established, and thus the maintenance of the semiconductor manufacturing facility is not efficiently performed.

For example, the valve leak detection method of a semiconductor manufacturing apparatus according to the prior art detects leaks of a plurality of sub-reaction gas valves and sub-cleaning gas valves at a time without first detecting whether the main reaction gas valve and the main cleaning gas valve are leaked or not. Or the leak of the main cleaning gas valve is detected at a time without first detecting the leak of the main cleaning gas valve, and the reaction gas is supplied to the supply stage of the cleaning gas by the leak of the main cleaning gas valve. A large amount of powder is generated by the chemical reaction between the reaction gas and the cleaning gas in the main cleaning gas valve itself or in a gas supply line before and after the main cleaning gas valve, and in the subsequent semiconductor manufacturing process, the powder wafer Since pollution is caused, there is a problem that the production yield falls.

In addition, the powder generated in the gas supply line before and after the main cleaning gas valve not only shortens the life and maintenance cycle of the main cleaning gas valve that is subsequently replaced, but also increases valve leak detection time and maintenance time, thereby increasing productivity. There was a downside.

An object of the present invention for solving the above problems is to prevent the reaction gas from flowing back into the cleaning gas supply stage by the leak of the main cleaning gas valve, so that the main cleaning gas valve itself or the front and rear ends of the main cleaning gas valve To prevent the generation of powder in the gas supply line, and to prevent the wafer contamination by the powder to provide a valve leak detection method of the semiconductor manufacturing equipment that can increase or maximize the production yield.

In addition, another object of the present invention is to prevent the life and maintenance cycle of the main cleaning gas valve is shortened by the powder generated in the gas supply line before and after the main cleaning gas valve, valve leakage detection time and maintenance time It is to provide a valve leak detection method of a semiconductor manufacturing facility that can prevent the increase to increase or maximize productivity.

Valve leakage detection method of a semiconductor manufacturing apparatus according to an aspect of the present invention for achieving the above object, the main gas to control the flow of a plurality of cleaning gas and reaction gas supplied into the chamber through a supply line communicating with the chamber Detecting a leak in the supply valve; Opening the main gas supply valve and closing the main cleaning gas valve for controlling a plurality of cleaning gas flows supplied to the supply line to detect a leak of the main cleaning gas valve; Opening the main cleaning gas valve and the main gas supply valve and closing the sub cleaning gas valve for controlling the flow of each of the plurality of cleaning gases supplied to the supply line to detect a leak of the sub cleaning gas valve; The sub cleaning gas valve and the main cleaning gas valve are closed, and the main reaction gas valve for controlling the plurality of reaction gas flows supplied to the supply line with the main gas supply valve open is closed. Detecting a leak; And detecting the sub-reaction gas valve leak by closing a sub-reaction gas valve for controlling the flow of each of the plurality of reaction gases supplied to the supply line while the main gas supply valve and the main reaction gas valve are opened. It is characterized by including.

EMBODIMENT OF THE INVENTION Hereinafter, the valve leak detection method of the semiconductor manufacturing equipment of this invention is described in detail with reference to an accompanying drawing. However, embodiments of the present invention may be modified in many different forms, and the scope of the present invention should not be construed as being limited by the embodiments described below. Embodiments of the present invention are provided to more completely explain the present invention to those skilled in the art. Accordingly, the shape and the like of the elements in the drawings are exaggerated to emphasize a more clear description, and the elements denoted by the same reference numerals in the drawings means the same elements. In the following description of the present invention, if it is determined that a detailed description of a related known function or configuration may unnecessarily obscure the subject matter of the present invention, the detailed description thereof will be omitted.

1 is a diagram schematically showing a semiconductor manufacturing apparatus of the present invention, in which the semiconductor manufacturing apparatus of the present invention is largely provided with a process chamber 10 which provides a closed space from the outside, and air inside the process chamber 10. And an exhaust unit 20 for pumping the gas and a gas supply unit 30 for supplying a reaction gas and a cleaning gas into the process chamber 10.

Here, the process chamber 10 is provided by the exhaust unit 20 to provide a space sealed from the atmosphere so that the semiconductor manufacturing process is independent from the outside, and has a predetermined degree of vacuum to free from contaminants in the atmosphere. Of air is formed to be pumped. For example, the process chamber 10 may include a shower head 12 for spraying the reaction gas and the cleaning gas supplied from the gas supply part 30 at a predetermined flow rate, and the wafer may be horizontally opposed to the shower head 12. A heater block 14 which is heated to a predetermined temperature while being supported by a heat sink, a plasma electrode (not shown) formed to excite the cleaning gas to a plasma state when the process chamber 10 is cleaned, and the process chamber 10 Including a vacuum sensor (not shown) for detecting the degree of vacuum inside.

In addition, the exhaust unit 20 includes a pumping line 22 connected to the bottom of the process chamber 10 and a vacuum pump 24 configured to pump air at a predetermined pumping pressure at an end of the pumping line 22. ) Although not shown, the vacuum pump 24 is connected in series with the high vacuum pump, such as a turbo pump for pumping air in the process chamber 10 to a vacuum degree of about 1 × 10 −6 torr. And a low vacuum pump, such as a dry pump, pumping air in the process chamber 10 to a vacuum degree of about 1 × 10 −3 torr. The high vacuum pump is formed at the pumping line 22 closest to the process chamber 10 and the low vacuum pump is at the other end of the pumping line 22 opposite to the process chamber 10 formed at one end. Can be formed. In addition, the pumping line 22 is between the high vacuum pump and the low vacuum pump by branching at the front end of the high vacuum pump and the high vacuum pump and the low vacuum pump connected in series, and bypassing the high vacuum pump. It comprises a roughing line to be connected. In addition, at least one pumping line valve 26 is formed, such as a po line valve and a roughing line valve, formed in each of the po line and the roughing line to control the air flowing through the poline and the roughing line. .

In addition, the gas supply unit 30 is a reaction gas for depositing the thin film on the wafer W or etching the wafer W or the thin film in the process chamber 10, and the process chamber 10. And a cleaning gas for cleaning the inner wall of the filter at a predetermined flow rate. In this case, the gas supply unit 30 supplies the reaction gas at a constant flow rate during the semiconductor manufacturing process so that the degree of vacuum inside the process chamber 10 is not easily changed, and compared with the air pumped by the vacuum pump 24. The reaction gas is formed to supply the reaction chamber with an extremely low flow rate to the process chamber 10. For example, the gas supply unit 30 may include a plurality of reaction gases such as silane (SiH 4 ) gas, nitrogen dioxide (N 2 O) gas, argon (Ar) gas, or TEOS gas, and nitrogen trifluoride (NF 3) having a predetermined mixing ratio. ) A plurality of cleaning gases such as gas or oxygen (O 2) gas and purge gas such as nitrogen (N 2) gas are supplied to the process chamber 10. Accordingly, the gas supply part 30 is branched from the gas supply line 32 connected to the shower head 12 of the process chamber 10 to supply the reaction gas supply part 40 to which the reaction gas is supplied, and the cleaning gas is supplied. The cleaning gas supply unit 50 is divided into a purge gas supply unit 30 to which purge gas is supplied. At this time, a main gas supply valve 34 for controlling the reaction gas, the cleaning gas, and the purge gas flowing through the gas supply line 32 connected to the process chamber 10 is formed. In addition, the main reaction gas valve 36 for controlling the flow of the reaction gas flowing through the gas supply line 32 connected in the direction of the main gas supply valve 34 in the reaction gas supply unit 40 Formed. Then, the main cleaning gas valve 38 for controlling the flow of the cleaning gas supplied from the cleaning gas supply unit 50 is formed. Similarly, a plurality of purge gas valves 62a, 62b, 62c for controlling the purge gas supplied from the purge gas supply unit 30 are formed. In this case, the main reaction gas valve 36, the main cleaning gas valve 38, and the purge gas valves 62a, 62b, and 62c may be branched at a front end of the main gas supply valve 34. 32 in parallel.

In addition, the reaction gas supply unit 40 is a silane gas valve, a nitrogen dioxide gas valve, argon to regulate the flow of the plurality of reaction gases through a gas supply line 32 connected to the front end of the main reaction gas valve 36 And a plurality of sub-reaction gas valves 42a, 42b, 42c, 42d and 42e, such as a gas valve or a gas valve. Similarly, the cleaning gas supply unit 50 is a nitrogen trifluoride gas valve for regulating the flow of the plurality of cleaning gases through the gas supply line 32 connected to the front end of the main cleaning gas valve 38, or oxygen A plurality of sub cleaning gas valves 52a and 52b such as gas valves are included. Although not shown, the reaction gas supply unit 40 and the cleaning gas supply unit 50 may be formed of the sub reaction gas valves 42a, 42b, 42c, 42d and 42e, and the sub cleaning gas valves 52a and 52b, respectively. The apparatus further includes a plurality of mass flow controllers configured to respectively control the flow rates of the plurality of reaction gases and the plurality of cleaning gases at the front end.

Accordingly, the semiconductor manufacturing equipment of the present invention has a plurality of sub-reaction gas valves 42a, 42b, 42c, which are connected to a gas supply line 32 connected to a raw material tank or a source so as to control the flow of a plurality of reaction gases and cleaning gases separately. 42d and 42e and a plurality of sub cleaning gas valves 52a and 52b are formed, and the plurality of sub reaction gas valves 42a, 42b, 42c, 42d and 42e and the plurality of sub cleaning gas valves 52a and The main reaction gas valve 36 and the main cleaning gas valve 38 are formed at portions where the gas supply lines 32 respectively connected to 52b are merged into one, and the main reaction gas valve 36 and the main A gas supply line 32 connected to the cleaning gas valve 38 is merged to form a main supply valve at a portion connected to the chamber. At this time, the valves are controlled by a control signal to a facility computer (not shown) in which a program for controlling the driving of the semiconductor manufacturing facility is stored.

Referring to the valve leak detection method of the semiconductor manufacturing equipment according to the embodiment configured as described above are as follows.

2 to 6 are diagrams for explaining a valve leak detection method of a semiconductor manufacturing apparatus according to an embodiment of the present invention.

As shown in FIG. 2, the valve leak detection method of the semiconductor manufacturing equipment includes the main gas supply valve 34, the main reaction gas valve 36, the main cleaning gas valve 38, and the sub reaction gas valve 42a. The first purge gas valve connected to the gas supply line 32 connected to the front end of the main gas supply valve 34 and closing all of the 42b, 42c, 42d and 42e, and the sub cleaning gas valves 52a and 52b. 62a is opened and the presence or absence of the leak of the said main gas supply valve 34 is detected.

In this case, when the leakage of the main gas supply valve 34 does not occur, the process chamber 10 may be maintained at a predetermined constant vacuum degree by pumping the vacuum pump 24 of the exhaust unit 20. When leakage of the main gas supply valve 34 occurs, the vacuum gas may be maintained at a vacuum lower than or equal to a set value. Therefore, when it is determined that the vacuum degree inside the process chamber 10 is reduced by using the detection signal output from the vacuum sensor, the facility computer may determine that the main gas supply valve 34 is leaked. On the other hand, if there is no change in the degree of vacuum inside the process chamber 10, it can be seen that the leak of the main gas supply valve is not generated.

As shown in FIG. 3, when the leak of the main gas supply valve 34 does not occur, the main reaction gas valve 36, the main cleaning gas valve 38, and the sub reaction gas valve 42a, 42b, 42c, 42d, and 42e, the sub cleaning gas valves 52a and 52b, and the first purge gas valve 62a are closed, and a purge gas supply line connected to the front end of the main cleaning gas valve 38 is provided. A second purge gas valve 62b which intercepts the flow of the purge gas flowing to the 32 and the main gas supply valve 34 is opened to detect the leakage of the main cleaning gas valve 38.

Similarly, when the leak of the main cleaning gas valve 38 does not occur, the process chamber 10 may be maintained at a constant vacuum set by the pumping of the vacuum pump 24 of the exhaust unit 20. When the leak of the main cleaning gas valve 38 is generated, it can be maintained at a vacuum below the set value. In addition, the facility computer may determine whether or not the main cleaning gas valve 38 is leaked according to the degree of vacuum in the processor. In this case, when the leak of the main cleaning gas valve 38 occurs, the main cleaning gas valve 38 may be replaced.

Therefore, the valve leak detection method of the semiconductor manufacturing apparatus according to the embodiment of the present invention is the main cleaning gas valve 38 to control the flow of the cleaning gas rather than the presence or absence of the leakage of the main reaction gas valve 36 to control the flow of the reaction gas The main cleaning gas valve by preventing the reaction gas from flowing back to the cleaning gas supply stage by the leakage of the main cleaning gas valve 38 when the leak of the main cleaning gas valve 38 is detected. (38) It is possible to prevent the generation of powder in itself or the gas supply line 32 before and after the main cleaning gas valve 38, and to prevent the contamination of the wafer by the powder to increase the production yield or It can be maximized.

As shown in FIG. 4, when there is no leakage of the main cleaning gas valve 38, the main reaction gas valve 36, the sub reaction gas valves 42a, 42b, 42c, 42d, and 42e, The sub cleaning gas valves 52a and 52b, the first purge gas valve 62a, and the second purge gas valve 62b are closed to close the main gas supply valve and the main cleaning gas valve 38. It opens and detects the presence or absence of the leak of the said sub washing gas valve 52a, 52b.

Here, when the leak of the sub cleaning gas valves 52a and 52b does not occur, the process chamber 10 may be pumped to have a set vacuum degree, but the leak of the sub cleaning gas valves 52a and 52b occurs. If so, the process chamber 10 may be maintained at a vacuum of less than or equal to a set value.

Therefore, the valve leak detection method of the semiconductor manufacturing equipment according to the embodiment of the present invention, the sub-clean gas valve 52a, 52b which is opened and closed to sequentially control the flow of the cleaning gas for cleaning the inner wall of the process chamber 10. Leak presence and absence of the main cleaning gas valve 38 and the main gas supply valve 34 in the order of the main gas supply valve 34, the main cleaning gas valve 38, and the sub cleaning gas valves 52a and 52b, respectively. Can be checked or checked. For example, the sub cleaning gas valve 52a that regulates a molecularly bonded cleaning gas such as nitrogen trifluoride may be caused to have a large amount of leak compared to the sub cleaning gas valve 52b that regulates a general cleaning gas such as oxygen. . Therefore, when the leak of the sub cleaning gas valves 52a and 52b is generated, the leak of the sub cleaning gas valve 52a which intercepts the cleaning gas made of nitrogen trifluoride is first detected and corrected for.

Although not shown, the second purge gas valve 62b may be closed immediately after the detection of leakage of the sub cleaning gas valves 52a and 52b is completed, but the second purge gas valve 62b is opened. After the second purge gas valve 62b and the main cleaning gas valve 38 are closed, the gas supply line 32 before and after the main cleaning gas valve 38 may be cleaned by the purge gas. have.

As shown in FIG. 5, when leakage of the sub cleaning gas valves 52a and 52b does not occur, the main reaction gas valve 36, the main cleaning gas valve 38, and the sub reaction gas valve ( 42a, 42b, 42c, 42d, and 42e, the sub cleaning gas valves 52a and 52b, the first purge gas valve 62a, and the second purge gas valve 62b, and close the main reaction gas valve. A third purge gas valve 62c for controlling the flow of the purge gas flowing to the purge gas supply line 32 connected to the front end of the 36 and the main gas supply valve 34 to open the main reaction gas valve. The presence or absence of the leak of (36) is detected.

Here, when the leak of the main reaction gas valve 36 is not generated, the process chamber 10 may be maintained at a set vacuum degree, but when the leak of the main reaction gas valve 36 is generated, the process The chamber 10 may be maintained at a vacuum level below a set value. At this time, the leak of the main cleaning gas valve 38 is confirmed and the main cleaning gas valve 38 is actuated so that the leak of the main reaction gas valve 36 is generated through the main reaction gas valve 36. Contamination of the main cleaning gas valve 38 by the reactant gas flowing may be minimized. Because the cleaning gas flowing through the main cleaning gas valve 38 and the reaction gas cannot meet each other, it is possible to prevent the generation of powder due to the reaction of the cleaning gas and the reaction gas.

Accordingly, the method of detecting a leak of a valve in a semiconductor manufacturing apparatus according to an exemplary embodiment of the present invention first detects and measures a leak of a main cleaning gas valve 38 that regulates the flow of cleaning gas, and controls the flow of the reaction gas. The main cleaning gas valve 38 itself or the main cleaning gas by detecting the leak of the gas valve 36 to prevent the reaction gas from flowing back to the cleaning gas supply stage through the main cleaning gas valve 38. Since the powder can be prevented from occurring in the gas supply line 32 at the front and rear ends of the valve 38, and the wafer contamination by the powder can be prevented, the production yield can be increased or maximized.

In addition, the leak of the main cleaning gas valve 38 is detected and measured before the leak of the main reaction gas valve 36, and after the completion of the leak of the main cleaning gas valve 38, the front and rear of the main cleaning gas valve 38. However, the purge gas flows to the connected gas supply line 32 so that the reaction gas and the cleaning gas flowing at the time of detecting the leak of the main reaction gas valve 36 in the gas supply line 32 do not react with each other. Thereby minimizing powder caused by reaction of the reaction gas and the cleaning gas in the gas supply line 32 at the front and rear ends of the main cleaning gas valve 38 and by using the powder, the life of the main cleaning gas valve 38 is reduced. And since the maintenance cycle can be prevented from being shortened, and valve leak detection time and maintenance time can be prevented from increasing, productivity can be increased or maximized.

As shown in FIG. 6, when leakage of the main reaction gas valve 36 does not occur, the main cleaning gas valve 38, the sub reaction gas valves 42a, 42b, 42c, 42d, and 42e, The sub cleaning gas valves 52a and 52b, the first purge gas valve 62a, the second purge gas valve 62b, and the third purge gas valve 62c are closed, and the main gas supply valve ( 34) and the main reaction gas valve 36 are opened to detect the leakage of the sub reaction gas valves 42a, 42b, 42c, 42d and 42e.

Here, when the leakage of the sub-reaction gas valves 42a, 42b, 42c, 42d, and 42e does not occur, the process chamber 10 may maintain a set vacuum degree, but the sub-reaction gas valves 42a, 42b, When leaks of 42c, 42d, and 42e occur, the process chamber 10 may maintain a degree of vacuum below a set value. At this time, when the leak of the sub-reaction gas valves 42a, 42b, 42c, 42d, and 42e is generated, since the leak of the sub-reaction gas valve 42e which regulates the silane gas is high, it is first confirmed and By checking it, leak detection of various valves can be completed.

As a result, the leak detection method of the semiconductor manufacturing equipment according to the embodiment of the present invention first detects and measures leaks of the main cleaning gas valve 38 and the sub cleaning gas valves 52a and 52b that regulate the flow of the cleaning gas. The leaks of the main reaction gas valve 36 and the sub reaction gas valves 42a, 42b, 42c, 42d, and 42e are subsequently detected and acted upon, thereby regulating the reaction gas and the cleaning gas. It is possible to minimize the pollutants of the powder component caused by the reaction.

In addition, the description of the above embodiment is merely given by way of example with reference to the drawings in order to provide a more thorough understanding of the present invention, it should not be construed as limiting the present invention. In addition, for those skilled in the art, various changes and modifications may be made without departing from the basic principles of the present invention.

As described above, according to the present invention, the leak of the main cleaning gas valve which regulates the flow of the cleaning gas is first detected and measured, and the leak of the main reaction gas valve that regulates the flow of the reaction gas is detected so as to detect the leak of the main cleaning gas. By preventing the flow of the reaction gas back to the cleaning gas supply through the valve to prevent the powder is generated in the main supply gas valve itself or the gas supply line before and after the main cleaning gas valve, the wafer by the powder Because it can prevent contamination, there is an effect to increase or maximize the production yield.

In addition, the leak of the main cleaning gas valve is detected and measured before the leak of the main reaction gas valve, and after the completion of the leak of the main cleaning gas valve, purge gas flows to the gas supply line connected to the front and rear ends of the main cleaning gas valve. The reaction gas and the cleaning gas in the gas supply line of the front and rear end of the main cleaning gas valve to prevent the reaction gas and the cleaning gas flowing when the leak detection of the main reaction gas valve in the gas supply line to meet each other Increases the productivity by minimizing the powder caused by the reaction, preventing the life and maintenance cycle of the main cleaning gas valve from being shortened by the powder, and preventing the increase of the valve leak detection time and maintenance time. There is an effect that can be maximized.

Claims (2)

Detecting a leak of a main gas supply valve for controlling a flow of a plurality of cleaning gas and reaction gas supplied into the chamber through a supply line communicating with the chamber; Opening the main gas supply valve and closing the main cleaning gas valve for controlling a plurality of cleaning gas flows supplied to the supply line to detect a leak of the main cleaning gas valve; Opening the main cleaning gas valve and the main gas supply valve and closing the sub cleaning gas valve for controlling the flow of each of the plurality of cleaning gases supplied to the supply line to detect a leak of the sub cleaning gas valve; The sub cleaning gas valve and the main cleaning gas valve are closed, and the main reaction gas valve for controlling the plurality of reaction gas flows supplied to the supply line with the main gas supply valve open is closed. Detecting a leak; And Detecting the sub-react gas valve leak by closing a sub-reaction gas valve for regulating the flow of each of the plurality of reaction gases supplied to the supply line while the main gas supply valve and the main reaction gas valve are opened. Valve leak detection method of a semiconductor manufacturing equipment, characterized in that. The method of claim 1, The leak detection of the main gas supply valve, the main cleaning gas valve, and the main reaction gas valve is performed by supplying a purge gas to a supply line connected to the front end of each valve and detecting a degree of vacuum in the chamber. Valve leak detection method of semiconductor manufacturing equipment.
KR1020070027982A 2007-03-22 2007-03-22 Method for detecting valve leak at the semiconductor device manufacture equipment KR20080086172A (en)

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10066789B2 (en) 2014-07-29 2018-09-04 Samsung Electronics Co., Ltd. Method of automatically inspecting internal gas leak and method of manufacturing LED chip
KR20190074221A (en) * 2017-12-19 2019-06-27 가부시키가이샤 히다치 하이테크놀로지즈 Plasma processing apparatus
US11776792B2 (en) 2020-04-03 2023-10-03 Hitachi High-Tech Corporation Plasma processing apparatus and plasma processing method

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10066789B2 (en) 2014-07-29 2018-09-04 Samsung Electronics Co., Ltd. Method of automatically inspecting internal gas leak and method of manufacturing LED chip
KR20190074221A (en) * 2017-12-19 2019-06-27 가부시키가이샤 히다치 하이테크놀로지즈 Plasma processing apparatus
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