CN112017934A - Pressure control method and system - Google Patents
Pressure control method and system Download PDFInfo
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- CN112017934A CN112017934A CN201910470037.3A CN201910470037A CN112017934A CN 112017934 A CN112017934 A CN 112017934A CN 201910470037 A CN201910470037 A CN 201910470037A CN 112017934 A CN112017934 A CN 112017934A
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- 238000000034 method Methods 0.000 title claims abstract description 75
- 230000005540 biological transmission Effects 0.000 claims abstract description 41
- 238000000605 extraction Methods 0.000 claims abstract description 9
- 230000007704 transition Effects 0.000 claims description 42
- 230000008569 process Effects 0.000 claims description 31
- 238000005086 pumping Methods 0.000 claims description 9
- 239000007789 gas Substances 0.000 description 22
- 230000001276 controlling effect Effects 0.000 description 12
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 239000004065 semiconductor Substances 0.000 description 7
- 229910052710 silicon Inorganic materials 0.000 description 7
- 239000010703 silicon Substances 0.000 description 7
- 235000012431 wafers Nutrition 0.000 description 7
- 239000002245 particle Substances 0.000 description 5
- 230000008859 change Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 238000005299 abrasion Methods 0.000 description 2
- 238000010924 continuous production Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000001105 regulatory effect Effects 0.000 description 2
- 230000009471 action Effects 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 125000004122 cyclic group Chemical group 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 230000033764 rhythmic process Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
- H01J37/32449—Gas control, e.g. control of the gas flow
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Abstract
The invention provides a pressure control method and a system, which are used for controlling the pressure of a cavity in a transmission platform, and the method comprises the following steps: s1: performing background air extraction on the chamber until the pressure of the chamber reaches a preset background pressure value; s2: inflating the chamber, and stopping inflating after a first set time; s3: evacuating the chamber at a predetermined evacuation rate until the pressure in the chamber reaches a target pressure value. By the invention, the pressure control cost of the transmission platform is reduced.
Description
Technical Field
The invention relates to the field of semiconductor manufacturing, in particular to a pressure control method and system.
Background
Semiconductor processing is generally performed by physically, chemically, etc. processing a silicon wafer, and the equipment for performing the processing is called semiconductor equipment. The processing of silicon wafers in semiconductor equipment is typically performed in a closed vessel under a vacuum environment, which is referred to as a process chamber. The semiconductor equipment is provided with a transmission platform besides the process chamber, the transmission platform comprises a transmission chamber and a transition chamber, a vacuum environment needs to be kept in the transmission chamber, the transition chamber is switched between a vacuum state and an atmospheric state, and the control of the pressure state of the chamber can also influence the process state of a silicon wafer in the process chamber; the transmission chamber is directly communicated with the process reaction chamber in the process of transmitting the silicon wafer, so that the vacuum degree of the transmission chamber can directly influence the conditions of gas pollution, particle control and the like in the process reaction chamber; because the size of the groove and the line width in the integrated circuit is small, tiny particles can cause great damage to the process result of the silicon wafer, so that how to control the pressure of each chamber in the transmission platform in a proper range is very important.
For the application number: CN201010530089.4, invention name: a pressure control method and a pressure control device of a transmission chamber and a plasma device disclose a pressure control method of the transmission chamber, which monitors the air pressure in the transmission chamber in real time by analyzing the pressure of the transmission chamber in a preset data acquisition period. When the current pressure is within the preset target pressure range, the current pressure and the pressure change rate of the transmission chamber are utilized to analyze the pressure in the transmission chamber according to a corresponding algorithm to obtain the current inflation flow, and further the opening state of the inflation valve is controlled to dynamically adjust the inflation flow, so that the air pumping rate and the inflation rate of the transmission chamber are quickly balanced, and the purpose of controlling the pressure of the transmission chamber is achieved. However, the strong control method of the transfer chamber realized by the patent has the disadvantages of complex structure of the control system, high cost and difficult realization.
Disclosure of Invention
The invention aims to at least solve one of the technical problems in the prior art and provides a pressure control method and a pressure control system so as to reduce the cost of pressure control of each chamber in a transmission platform.
To achieve the object of the present invention, a pressure control method for controlling the pressure of a chamber in a transfer platform is provided, the method comprising the steps of:
s1: performing background air extraction on the chamber until the pressure of the chamber reaches a preset background pressure value; s2: inflating the chamber, and stopping inflating after a first set time;
s3: evacuating the chamber at a predetermined evacuation rate until the pressure in the chamber reaches a target pressure value.
Preferably, the chamber is a transfer chamber or a transition chamber.
Preferably, before the step S1, the method further includes a step S0:
judging whether the pressure of the cavity in the transmission platform is the target pressure value: if not, go to step S1; if yes, the process returns to step S0.
Preferably, after the step S3, the method further includes: the execution returns to step S0.
Preferably, when the pressure of the transfer chamber and the pressure of the transition chamber are controlled simultaneously, the target pressure value of the transfer chamber is the same as the target pressure value of the transition chamber.
Preferably, the target pressure value is 1 to 10 Torr.
Preferably, the first set time is 1 s.
Preferably, in the step S2, the pressure control time is adjusted by adjusting the amount of intake air charged into the chamber.
A pressure control system for pressure controlling a chamber in a transfer platform, the system comprising: the system comprises a gas source, a vacuum pump, a pressure sensor, a first switch, a second switch and a processor;
the pressure sensor is used for detecting the pressure of a chamber in the transmission platform and transmitting the pressure to the processor;
the first switch is arranged on a gas path between the gas source and the chamber;
the second switch is arranged on an air path between the vacuum pump and the cavity;
the processor judges whether the pressure is a target pressure value in real time;
the processor performs background air extraction on the chamber through the second switch and the vacuum pump until the pressure reaches a preset background pressure value; inflating the chamber through the first switch and the gas source, and stopping inflating after a first set time; and then the chamber is pumped at a preset pumping speed through the second switch and the vacuum pump until the pressure reaches a target pressure value. Preferably, the method further comprises the following steps: a needle valve;
the needle valve is arranged on an air path between the first switch and the chamber.
Preferably, the chamber is a transfer chamber or a transition chamber.
The invention has the following beneficial effects:
the pressure control method and the pressure control system are used for controlling the pressure of the cavity in the transmission platform, and performing background air extraction on the cavity until the pressure of the cavity reaches a preset background pressure value; inflating the chamber, and stopping inflating after a first set time; the chamber is evacuated at a predetermined evacuation rate until the pressure in the chamber reaches a target pressure value. According to the pressure control method and the pressure control system provided by the invention, the pressure of the chamber is more conveniently controlled, the time consumption of the whole pressure control process is short, and the pressure control cost of the chamber in the transmission platform can be effectively reduced.
Drawings
FIG. 1 is a flow chart of a pressure control method according to an embodiment of the present invention;
FIG. 2 is another flow chart of a pressure control method provided by an embodiment of the present invention;
FIG. 3 is a schematic diagram of a pressure control system according to an embodiment of the present invention;
FIG. 4 is a schematic diagram of another embodiment of a pressure control system according to the present invention;
FIG. 5 is a graph of pressure change during transition chamber pressure control;
fig. 6 is a graph of the pressure change during the control of the pressure in the transfer chamber.
Detailed Description
In order to make those skilled in the art better understand the technical solution of the present invention, the following describes the pressure control method and system provided by the present invention in detail with reference to the accompanying drawings.
Example one
Fig. 1 is a flowchart of a pressure control method according to an embodiment of the present invention, where the pressure control method is used for controlling the pressure of a chamber in a transfer platform, and includes the following steps:
step 100: and starting.
Step 101: performing background air extraction on the chamber until the pressure of the chamber reaches a preset background pressure value; specifically, the preset background pressure value is determined by different chambers and processes, for example, when the chamber is a transition chamber and silicon wafer is transferred in the transition chamber, the preset background pressure value is 50 mTorr.
Step 102: and inflating the chamber, and stopping inflating after the first set time.
Specifically, the first set time period is a configurable value, which is determined by an operator according to the process requirement, for example, the first set time period is 1 s. Furthermore, the first set time can be adjusted by adjusting the air inflow of the gas, and the purpose of adjusting the time consumed by pressure control can be achieved on the basis of adjusting the first set time.
Specifically, the time consumed for controlling the pressure is a time consumed for performing the pressure control by using the pressure control method of the present invention so that the pressure in the chamber reaches the target pressure value. When the air inflow of the air filled into the chamber is larger, the time consumed by pressure control is shorter; conversely, when the amount of intake air charged into the chamber is smaller, the time period during which the pressure control takes longer.
Step 103: the chamber is evacuated at a predetermined evacuation rate until the pressure in the chamber reaches a target pressure value.
Specifically, the target pressure value is a configurable value determined by the semiconductor equipment, and the target pressure value is in a range of 1-10 Torr, for example, the target pressure value is 2.7 Torr.
Specifically, the predetermined pumping speed is a configurable value determined by the vacuum pump, for example, the predetermined pumping speed is 5L/min.
The pressure control method provided by the embodiment of the invention is used for carrying out pressure control on the cavity in the transmission platform and carrying out background air extraction on the cavity until the pressure of the cavity reaches a preset background pressure value; inflating the chamber, and stopping inflating after a first set time; the chamber is evacuated at a predetermined evacuation rate until the pressure in the chamber reaches a target pressure value. The pressure control method provided by the invention is easy to realize, the time consumption of the whole pressure control process is short, and the pressure control cost of the cavity in the transmission platform can be effectively reduced.
In particular, the pressure control method provided by the present invention may be applied to a transfer chamber and/or a transition chamber of a transfer platform, that is, the chamber mentioned in the embodiments of the present invention is a transfer chamber or a transition chamber.
Further, in another embodiment of the present invention, when the pressure control method provided by the present invention is applied to control the pressure of the transfer chamber and the transition chamber simultaneously, i.e. the pressure control method, the target pressure value of the transfer chamber is the same as the target pressure value of the transition chamber. In the embodiment of the invention, the target pressure value of the transmission chamber is set to be the same as the target pressure value of the transition chamber, so that particles generated by abrasion of the gate valve switch due to overlarge pressure difference between the transition chamber and the transmission chamber can be avoided, the number of the particles in the transmission and process processes is reduced, and the transmission and process quality is ensured.
Further, in an embodiment of the present invention, when the pressure control method provided by the present invention is applied to the transfer chamber, the preset background pressure value of the transfer chamber is 100 mTorr; when the pressure control method provided by the invention is applied to the transition chamber, the preset background pressure value of the transition chamber is 50 mTorr.
Example two
Fig. 2 is another flow chart of a pressure control method according to an embodiment of the present invention, where the pressure control method according to the embodiment of the present invention includes the following steps:
step 200: and starting.
Step 201: judging whether the pressure of a cavity in the transmission platform is a target pressure value or not; if yes, return to step 201; otherwise, step 202 is performed.
Step 202: and performing background air exhaust on the chamber until the pressure of the chamber reaches a preset background pressure value.
Step 203: and inflating the chamber, stopping inflation after the first set time, and adjusting the time spent on controlling the pressure by adjusting the air inflow amount of the inflation to the chamber.
Step 204: and exhausting the chamber at a preset exhausting speed until the pressure in the chamber reaches a target pressure value, and returning to execute the step 201.
According to the pressure control method provided by the embodiment of the invention, in the process of injecting gas into the cavity, the time consumed for pressure control is adjusted by adjusting the gas inflow of the gas, in the embodiment, the gas inflow in the cavity is larger, and the time consumed for pressure control is short; controlling the pressure consumption time if the air input in the chamber is small; the embodiment of the invention can effectively adjust the pressure control time.
EXAMPLE III
In view of the above pressure control method, the present invention further provides a pressure control system for controlling the pressure of the chamber in the transfer platform, as shown in fig. 2, the pressure control system in this embodiment includes: a gas source 1, a vacuum pump 2, a pressure sensor 3, a first switch 4, a second switch 5, and a processor 6.
The pressure sensor 3 is used for detecting the pressure of the chamber 7 in the transfer platform and transmitting the pressure to the processor.
A first switch 4 is arranged in the gas path between the gas source 1 and the chamber 7.
A second switch 5 is provided in the gas path between the vacuum pump 2 and the chamber 7.
The processor 6 performs background air extraction on the chamber through the second switch 5 and the vacuum pump 2 until the pressure reaches a preset background pressure value; inflating the chamber through the first switch 4 and the gas source 1, and stopping inflating after a first set time; and then the second switch 5 and the vacuum pump 2 are used for exhausting the chamber at a preset exhausting speed until the pressure reaches a target pressure value.
Specifically, the target pressure value is a configurable value determined by the semiconductor equipment, and the target pressure value is in a range of 1-10 Torr, for example, the target pressure value is 2.7 Torr.
Specifically, the background pressure value is determined by different chambers and processes, for example, when the chamber is a transition chamber and silicon wafer transfer is performed in the transition chamber, the background pressure value is 50 mTorr.
Specifically, the first set time is a configurable value, which is determined by an operator according to the process requirement, for example, the first set time is 1 s. Furthermore, the first set time can be adjusted by adjusting the air inflow of the gas, and the purpose of adjusting the time consumed by pressure control can be achieved on the basis of adjusting the first set time.
In particular, the chamber is a transfer chamber or a transition chamber. The preset background pressure value of the transmission chamber is 100 mTorr; the preset background pressure value of the transition chamber is 50 mTorr.
Specifically, the predetermined pumping speed is a configurable value determined by the vacuum pump, for example, the predetermined pumping speed is 5L/min.
Further, when the chambers are a transition chamber and a transfer chamber, the target pressure value of the transfer chamber is the same as the target pressure value of the transition chamber. The pressure control system provided by the embodiment of the invention is used for controlling the pressure of the cavity in the transmission platform, and the processor controls the vacuum pump to perform background pumping on the cavity until the pressure of the cavity reaches a preset background pressure value; the processor controls the gas source to inflate the chamber, and the inflation is stopped after the first set time; the chamber is evacuated at a predetermined evacuation rate until the pressure in the chamber reaches a target pressure value. The pressure control system provided by the invention has a simple structure, is easy to realize, and reduces the cost of pressure control of the transmission platform.
Example four
Referring to fig. 4, another structural schematic diagram of a pressure control system according to an embodiment of the present invention is shown, and with respect to the system shown in fig. 3, the chamber includes: a transition chamber 71 and a transfer chamber 72; the first switch has two switches 41 and 42, which are respectively arranged on the gas path between the gas source 1 and the transition chamber 71 and on the gas path between the gas source 1 and the transmission chamber 72; the second switch 5 is provided with two switches 51 and 52 which are respectively arranged on an air path between the vacuum pump 2 and the transmission chamber 72 and an air path between the vacuum pump 2 and the transition chamber 71; further, a needle valve 8 is added in fig. 4, and the needle valve 8 is arranged on an air path between the first switch and the chamber. Needle valve 8 is connected to processor 6, and needle valve 8 is controlled by processor 6. Specifically, the processor, the sensor and the connection relationship between the processor and the first switch 4, the second switch 5 and the needle valve 8 are not shown in fig. 4.
According to the pressure control system provided by the embodiment of the invention, the purpose of regulating and controlling pressure consumption is realized by regulating the air inflow of gas through the needle valve; the embodiment of the invention can effectively adjust the pressure control time.
The following describes the pressure control method and system provided by the present invention with reference to fig. 4:
the pressure control process of the transition chamber 71 is as follows: firstly, a product sheet is conveyed into a transition chamber 71 from an atmosphere end, in order to remove oxygen, water vapor and the like as much as possible, a second switch 52 needs to be opened, and the second switch 52 is closed after a vacuum pump 2 pumps the transition chamber 71 to a background pressure value; step two, the first switch 42 is opened, and the first switch 42 is closed after a first set time, wherein the needle valve 8 can be used for adjusting the size of the air inlet quantity, so that the pressure control duration of the transition chamber 71 is indirectly controlled; and step three, opening the second switch 52, enabling the vacuum pump 2 to slowly pump the transition chamber 71, closing the second switch 52 after the transition chamber 71 reaches the target pressure value, and ending the pressure control process. FIG. 5 is a pressure change curve during transition chamber pressure control, with an enlarged view of the 30-150s time period; referring to fig. 5, it can be seen that the pressure control process can be completed from the background pressure value of-50 mTorr to the target pressure value of-2.6 Torr in 5 seconds, the needle valve 8 can be adjusted to increase or decrease the pressure control time, and the chamber pressure can be maintained stable after the pressure control process is finished.
The pressure control processes of the transfer chamber 72 and the transition chamber 71 are substantially identical, except that the transition chamber 71 requires cyclic control of pressure due to product sheet ingress and egress, and is at atmospheric conditions when idle. The pressure control process of the transmission chamber 72 is only needed once in the continuous production process, and the second switch 51 is turned on to be pumped to the background pressure value when the machine is in an idle state. Since the air pressure in the transfer chamber 72 is generally less than or equal to the background pressure value, the specific control process is as follows: step one, turning on a first switch 41, and turning off the first switch 41 after inflating for a first set time period; and step two, opening the second switch 51 to enable the vacuum pump 2 to perform slow pumping, so that the second switch 51 is closed after the transmission chamber 72 reaches the target pressure value, and the pressure control process is finished. The transition chamber pressure during the pressure control process is shown in fig. 6, and it can be seen that 28 seconds is required from the background pressure value of-50 mTorr to the target pressure value of-2.6 Torr, and the chamber pressure is maintained stable after the pressure control process is finished. In addition, the pressure control of the transmission chamber can be carried out once at the beginning of continuous production, so that the influence of pressure control on production rhythm is small. Meanwhile, the pressure control pressure of the transition chamber 71 and the pressure control pressure of the transmission chamber 72 are consistent, and particles generated by abrasion of a gate valve switch with overlarge pressure difference are avoided.
The pressure control flow of the transition chamber is suitable for the chamber with smaller chamber capacity, and the pressure control flow of the transmission chamber is suitable for controlling the chamber with larger chamber volume. It should be noted that, since there is a certain delay from the sending of the instruction by the software to the execution of the closing action of the second switch, the configured target pressure value needs to be slightly higher than the actual pressure value to be reached, and the specific data can be finely adjusted according to the actual machine state.
It will be understood that the above embodiments are merely exemplary embodiments taken to illustrate the principles of the present invention, which is not limited thereto. It will be apparent to those skilled in the art that various modifications and improvements can be made without departing from the spirit and substance of the invention, and these modifications and improvements are also considered to be within the scope of the invention.
Claims (11)
1. A method of pressure control for controlling the pressure of a chamber in a transfer platform, the method comprising the steps of:
s1: performing background air extraction on the chamber until the pressure of the chamber reaches a preset background pressure value;
s2: inflating the chamber, and stopping inflating after a first set time;
s3: evacuating the chamber at a predetermined evacuation rate until the pressure in the chamber reaches a target pressure value.
2. The method of pressure control of claim 1, wherein the chamber is a transfer chamber or a transition chamber.
3. The pressure control method of claim 1, wherein before the step S1, the method further comprises a step S0:
judging whether the pressure of the cavity in the transmission platform is the target pressure value: if not, go to step S1; if yes, the process returns to step S0.
4. The pressure control method according to claim 3, further comprising, after the step S3: the execution returns to step S0.
5. The pressure control method of claim 2, wherein the target pressure value of the transfer chamber is the same as the target pressure value of the transition chamber when the transfer chamber and the transition chamber are simultaneously controlled.
6. The pressure control method according to claim 3 or 4, wherein the target pressure value is 1 to 10 Torr.
7. The pressure control method according to claim 1, characterized in that the first set time is 1 s.
8. The pressure control method according to any one of claims 1 to 7, wherein in the step S2, the pressure control time is adjusted by adjusting an amount of intake air charged into the chamber.
9. A pressure control system for pressure controlling a chamber in a transfer platform, the system comprising: the system comprises a gas source, a vacuum pump, a pressure sensor, a first switch, a second switch and a processor;
the pressure sensor is used for detecting the pressure of a chamber in the transmission platform and transmitting the pressure to the processor;
the first switch is arranged on a gas path between the gas source and the chamber;
the second switch is arranged on an air path between the vacuum pump and the cavity;
the processor performs background air extraction on the chamber through the second switch and the vacuum pump until the pressure reaches a preset background pressure value; inflating the chamber through the first switch and the gas source, and stopping inflating after a first set time; and then the chamber is pumped at a preset pumping speed through the second switch and the vacuum pump until the pressure reaches a target pressure value.
10. The pressure control system of claim 9, further comprising: a needle valve;
the needle valve is arranged on an air path between the first switch and the chamber.
11. The pressure control system of claim 8, wherein the chamber is a transfer chamber or a transition chamber.
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| CN201910470037.3A CN112017934B (en) | 2019-05-29 | 2019-05-29 | Pressure control method and system |
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| CN201910470037.3A CN112017934B (en) | 2019-05-29 | 2019-05-29 | Pressure control method and system |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113515095A (en) * | 2021-04-16 | 2021-10-19 | 北京北方华创微电子装备有限公司 | Method for controlling pressure of multiple process chambers and semiconductor process equipment |
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| US5803107A (en) * | 1996-03-29 | 1998-09-08 | Lam Research Corporation | Method and apparatus for pressure control in vacuum processors |
| US6131307A (en) * | 1997-08-07 | 2000-10-17 | Tokyo Electron Limited | Method and device for controlling pressure and flow rate |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN113515095A (en) * | 2021-04-16 | 2021-10-19 | 北京北方华创微电子装备有限公司 | Method for controlling pressure of multiple process chambers and semiconductor process equipment |
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| CN112017934B (en) | 2024-06-21 |
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