CN113515095A - Method for controlling pressure of multiple process chambers and semiconductor process equipment - Google Patents

Method for controlling pressure of multiple process chambers and semiconductor process equipment Download PDF

Info

Publication number
CN113515095A
CN113515095A CN202110411361.5A CN202110411361A CN113515095A CN 113515095 A CN113515095 A CN 113515095A CN 202110411361 A CN202110411361 A CN 202110411361A CN 113515095 A CN113515095 A CN 113515095A
Authority
CN
China
Prior art keywords
pressure
process chamber
detection device
chamber
value
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202110411361.5A
Other languages
Chinese (zh)
Inventor
王松涛
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Beijing Naura Microelectronics Equipment Co Ltd
Original Assignee
Beijing Naura Microelectronics Equipment Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Beijing Naura Microelectronics Equipment Co Ltd filed Critical Beijing Naura Microelectronics Equipment Co Ltd
Priority to CN202110411361.5A priority Critical patent/CN113515095A/en
Publication of CN113515095A publication Critical patent/CN113515095A/en
Priority to PCT/CN2022/083541 priority patent/WO2022218142A1/en
Priority to TW111111889A priority patent/TWI820656B/en
Pending legal-status Critical Current

Links

Images

Classifications

    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05B—CONTROL OR REGULATING SYSTEMS IN GENERAL; FUNCTIONAL ELEMENTS OF SUCH SYSTEMS; MONITORING OR TESTING ARRANGEMENTS FOR SUCH SYSTEMS OR ELEMENTS
    • G05B19/00—Programme-control systems
    • G05B19/02—Programme-control systems electric
    • G05B19/418—Total factory control, i.e. centrally controlling a plurality of machines, e.g. direct or distributed numerical control [DNC], flexible manufacturing systems [FMS], integrated manufacturing systems [IMS], computer integrated manufacturing [CIM]
    • G05B19/41865—Total factory control, i.e. centrally controlling a plurality of machines, e.g. direct or distributed numerical control [DNC], flexible manufacturing systems [FMS], integrated manufacturing systems [IMS], computer integrated manufacturing [CIM] characterised by job scheduling, process planning, material flow
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05B—CONTROL OR REGULATING SYSTEMS IN GENERAL; FUNCTIONAL ELEMENTS OF SUCH SYSTEMS; MONITORING OR TESTING ARRANGEMENTS FOR SUCH SYSTEMS OR ELEMENTS
    • G05B2219/00—Program-control systems
    • G05B2219/30—Nc systems
    • G05B2219/32—Operator till task planning
    • G05B2219/32252—Scheduling production, machining, job shop
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P90/00—Enabling technologies with a potential contribution to greenhouse gas [GHG] emissions mitigation
    • Y02P90/02—Total factory control, e.g. smart factories, flexible manufacturing systems [FMS] or integrated manufacturing systems [IMS]

Abstract

The invention provides a method for controlling the pressure of a plurality of process chambers and semiconductor process equipment, wherein the method comprises the following steps: s1, respectively obtaining pressure control parameters corresponding to the target pressure values of the process chambers according to the same target pressure values of the process chambers and the preset corresponding relations between the pressure control parameters and the pressure values of the process chambers; and S2, respectively outputting the pressure control parameters corresponding to the target pressure values to the pressure control devices of the process chambers. The method for controlling the pressure of the multiple process chambers and the semiconductor process equipment can improve the pressure consistency of the multiple process chambers in the semiconductor process.

Description

Method for controlling pressure of multiple process chambers and semiconductor process equipment
Technical Field
The invention relates to the technical field of semiconductor process, in particular to a method for controlling the pressure of a plurality of process chambers in semiconductor process equipment and the semiconductor process equipment.
Background
When a semiconductor process is used for processing a wafer by means of physical or chemical means and the like, the semiconductor process needs to be carried out in a process chamber (PM) capable of providing a certain vacuum environment, the wafer usually enters a Transmission Chamber (TC) from the atmospheric environment and then enters the process chamber, the transmission chamber can be connected with a plurality of process chambers, and an on-off valve used for communicating or isolating the transmission chamber and each process chamber is arranged between the transmission chamber and each process chamber. As semiconductor processes have been developed, the requirements for uniformity of semiconductor devices in the semiconductor processes have become more and more strict, and since the pressure of a process chamber has an important influence on the semiconductor process results, it has become very important to make the pressures of a plurality of process chambers uniform in the semiconductor processes.
However, due to the differences between the pumping devices of the plurality of process chambers, the differences between the pressure detection devices of the plurality of process chambers, and the differences between the structures of the plurality of process chambers, the pressure uniformity of the plurality of process chambers in the semiconductor process is poor.
Disclosure of Invention
The present invention is directed to at least one of the technical problems of the prior art, and provides a method for controlling the pressure of a plurality of process chambers and a semiconductor process apparatus, which can improve the pressure uniformity of the plurality of process chambers in the semiconductor process.
To achieve the object of the present invention, there is provided a method for controlling pressures of a plurality of process chambers in a semiconductor processing apparatus, comprising the steps of:
s1, respectively obtaining pressure control parameters corresponding to the target pressure values of the process chambers according to the same target pressure values of the process chambers and the preset corresponding relations between the pressure control parameters and the pressure values of the process chambers;
and S2, respectively outputting the pressure control parameters corresponding to the target pressure values to the pressure control devices of the process chambers.
Preferably, the correspondence of each process chamber includes N sub-correspondences, where N is an integer greater than 1; the N sub-corresponding relations correspond to N continuous and non-intersection pressure ranges formed by dividing the full range of a standard pressure detection device one by one;
the step S1 includes:
s11, determining the sub-corresponding relation of each process chamber corresponding to the pressure range where the target pressure value is located;
and S12, respectively obtaining pressure control parameters corresponding to the target pressure values of the process chambers according to the target pressure values and the corresponding sub-corresponding relations of the pressure ranges of the process chambers corresponding to the target pressure values.
Preferably, the correspondence relationship of each process chamber is obtained by:
s01, enabling each process chamber to be communicated with the same transmission chamber, exhausting the transmission chamber, and recording a pressure reading of a pressure detection device of the transmission chamber after the pressure reading is stable to serve as an initial target pressure value;
s02, recording a first pressure index of the pressure detection device of each process chamber;
s03, introducing gas into the transmission chamber until the pressure indication of the pressure detection device of the transmission chamber reaches the upper limit value of the full range of the pressure detection device, and taking the upper limit value as the maximum target pressure value;
s04, recording a second pressure index of the pressure detection device of each process chamber;
and S05, calculating and obtaining a fitting function of each process chamber, which represents the corresponding relation, by adopting a linear fitting algorithm according to the initial target pressure value, the maximum target pressure value and the first pressure index and the second pressure index of each process chamber.
Preferably, the correspondence relationship of each process chamber is obtained by:
s001, communicating each process chamber with the same transmission chamber, exhausting the transmission chambers, and recording pressure readings of a pressure detection device of the transmission chambers after the pressure readings are stable to serve as initial target pressure values;
s002, recording the pressure readings of the pressure detection devices of the process chambers at the moment;
s003, introducing gas into the transmission chamber, and enabling the pressure readings of a pressure detection device of the transmission chamber to sequentially reach N preset target pressure values, wherein the Nth preset target pressure value is the upper limit value of the full range of the pressure detection device of the transmission chamber, and the initial target pressure value and the N preset target pressure values divide the full range into N continuous and non-intersection pressure ranges;
s004, recording the pressure readings of the pressure detection devices of the process chambers when the pressure readings of the pressure detection devices of the transmission chambers reach a preset target pressure value;
and S005, calculating and obtaining a fitting function representing the sub-corresponding relation of each pressure range of each process chamber by adopting a linear fitting algorithm according to the initial target pressure value, the N preset target pressure values, the initial target pressure values and the pressure indications of the pressure detection devices of the process chambers corresponding to the N preset target pressure values.
Preferably, for any process chamber in each process chamber, the corresponding relationship of the process chamber is obtained by:
s10, arranging a standard pressure detection device on the process chamber, exhausting the process chamber, recording a pressure index of the standard pressure detection device after the pressure index is stable, and taking the pressure index as an initial target pressure value;
s20, recording a first pressure index of the pressure detection device of the process chamber at the moment;
s30, introducing gas into the process chamber until the pressure indication value of the standard pressure detection device reaches the upper limit value of the full range of the standard pressure detection device, and taking the upper limit value as the maximum target pressure value;
s40, recording a second pressure index of the pressure detection device of the process chamber at the moment;
and S50, calculating and obtaining a fitting function of the process chamber, which represents the corresponding relation, by adopting a linear fitting algorithm according to the initial target pressure value, the maximum target pressure value, the first pressure index and the second pressure index.
Preferably, for any process chamber in each process chamber, the corresponding relationship of the process chamber is obtained by:
s100, arranging a standard pressure detection device on the process chamber, exhausting the process chamber, recording a pressure index of the standard pressure detection device after the pressure index is stable, and taking the pressure index as an initial target pressure value;
s200, recording the pressure readings of the pressure detection device of the process chamber;
s300, introducing gas into the process chamber, and enabling the pressure readings of the standard pressure detection device to sequentially reach N preset target pressure values, wherein the Nth target pressure value is the upper limit value of the full range of the standard pressure detection device, and the initial target pressure value and the N preset target pressure values divide the full range into N continuous pressure ranges without intersection;
s400, recording the pressure readings of the pressure detection device of the process chamber when the pressure readings of the standard pressure detection device reach a preset target pressure value;
s500, calculating and obtaining a fitting function representing the sub-corresponding relation of each pressure range of the process chamber by adopting a linear fitting algorithm according to the initial target pressure value, the N preset target pressure values, the initial target pressure values and the pressure indications of the pressure detection device of the process chamber corresponding to the N preset target pressure values.
Preferably, the N preset target pressure values satisfy the following formula:
Figure BDA0003024035330000041
wherein, p (i) is the ith preset target pressure value, i is 1, 2. Pr is the upper limit value of the full range of the pressure detection device of the transmission chamber or the standard pressure detection device.
The invention also provides semiconductor process equipment, which comprises a control device and a plurality of process chambers, wherein each process chamber is provided with a pressure detection device and corresponds to one pressure control device,
the pressure detection device is used for detecting the pressure of the process chamber, and the control device is in communication connection with the plurality of pressure control devices and is used for controlling the pressure of the process chamber through the pressure control devices by adopting the control method provided by the invention.
Preferably, the semiconductor processing equipment further comprises a transfer chamber, a pressure detection device is also arranged on the transfer chamber and used for detecting the pressure of the transfer chamber, and the transfer chamber and the plurality of process chambers can be selectively communicated.
Preferably, each process chamber is provided with an interface for installing a standard pressure detection device.
The invention has the following beneficial effects:
the invention provides a method for controlling the pressure of a plurality of process chambers, which respectively obtains the pressure control parameters corresponding to the target pressure values of the process chambers according to the same target pressure values of the process chambers and the preset corresponding relation between the pressure control parameters and the pressure values of the process chambers, respectively outputs the pressure control parameters corresponding to the target pressure values of the process chambers to the pressure control devices of the process chambers, respectively controls the pressure of the process chambers according to the pressure control parameters corresponding to the target pressure values of the process chambers by means of the pressure control devices of the process chambers, thereby controlling the pressure of the process chambers to be at the target pressure values, and further avoiding the difference among the air exhaust devices of the process chambers, the difference among the pressure detection devices of the process chambers and the difference among the structures of the process chambers, the pressure consistency of the plurality of process chambers in the semiconductor process is poor, and the pressure consistency of the plurality of process chambers in the semiconductor process can be improved.
The semiconductor process equipment provided by the invention has the advantages that the control device is in communication connection with the plurality of pressure control devices, so that the pressure of the process chambers is controlled by the control device through the pressure control devices by adopting the control method of the pressure of the plurality of process chambers provided by the invention, and the pressure consistency of the plurality of process chambers in the semiconductor process can be improved.
Drawings
FIG. 1 is a schematic diagram of a semiconductor processing apparatus according to an embodiment of the present invention;
FIG. 2 is a flow chart of a method for controlling the pressure in a plurality of process chambers according to an embodiment of the present invention;
FIG. 3 is another flow chart of a method for controlling the pressure in a plurality of process chambers according to an embodiment of the present invention;
FIG. 4 is a flow chart of a method for controlling the pressure in a plurality of process chambers according to an embodiment of the present invention;
FIG. 5 is a flow chart of a method for controlling the pressure in a plurality of process chambers according to an embodiment of the present invention;
FIG. 6 is a flow chart of a method for controlling the pressure in a plurality of process chambers according to an embodiment of the present invention;
FIG. 7 is a flow chart of a method for controlling the pressure in a plurality of process chambers according to an embodiment of the present invention;
description of reference numerals:
11-a process chamber; 12-a transfer chamber; 13-a pressure detection device; 14-a pressure detection device; 15-a pressure control device; 16-a first extraction line; 17-a first suction device; 18-a first air intake device; 19-a second extraction line; 21-a second air extraction device; 22-a second air intake; 23-on-off valve.
Detailed Description
In order to make the technical solutions of the present invention better understood by those skilled in the art, the method for controlling the pressure of a plurality of process chambers and the semiconductor processing equipment provided by the present invention will be described in detail below with reference to the accompanying drawings.
As shown in fig. 1 and 2, the present embodiment provides a method for controlling the pressure of a plurality of process chambers in a semiconductor processing apparatus, comprising the steps of:
s1, obtaining pressure control parameters corresponding to the target pressure values of the process chambers 11 according to the same target pressure values of the process chambers 11 and a preset corresponding relationship between the pressure control parameters and the pressure values of the process chambers 11;
s2, outputting the pressure control parameters corresponding to the target pressure values to the pressure control devices 15 of the process chambers 11, respectively.
In order to better understand the method for controlling the pressures of the multiple process chambers provided by the embodiment of the present invention, a method for controlling the pressures of the multiple process chambers in the prior art will be described first. In the prior art, the uniformity of the pressures in the plurality of process chambers 11 mainly depends on the uniformity and accuracy of the pressure detecting devices 13 of the process chambers 11 and the uniformity and accuracy of the pressure control devices 15 of the process chambers 11. Before the semiconductor process is started, the on-off valves 23 between the process chambers 11 and the transmission chamber 12 are closed, so that the process chambers 11 are isolated from the transmission chamber 12, the opening degree of the pressure control devices 15 of the process chambers 11 is opened to the maximum, the process chambers 11 are exhausted through the exhausting parts of the process chambers 11, the pressure indications of the pressure detection devices 13 of the process chambers 11 are basically kept unchanged, the pressure indications of the pressure detection devices 13 of the process chambers 11 are used as background pressure values, gas is introduced into the process chambers 11 through the gas inlet devices of the process chambers 11 in the semiconductor process, the pressure of the process chambers 11 is controlled through the pressure control devices 15 of the process chambers 11, so that the pressure indications of the pressure detection devices 13 of the process chambers 11 are the same, thereby allowing the pressure of the plurality of process chambers 11 to be uniform.
However, for example, due to the error of the pumping capability of the pumping devices of the process chambers 11 and the difference of the length and shape of the pumping lines of the process chambers 11, the difference between the pumping devices of the process chambers 11 may occur, or due to the difference of the accuracy of the pressure detecting devices 13 of the process chambers 11, the difference between the pressure detecting devices 13 of the process chambers 11 may occur, such that although the pressure indications of the pressure detecting devices 13 of the process chambers 11 are the same, the pressures of the process chambers 11 are actually different, and for example, due to the volume error of the process chambers 11, the difference between the structures of the process chambers 11 may occur, and the difference between the pumping devices of the process chambers 11, the difference between the pressure detecting devices 13 of the process chambers 11, and the difference between the structures of the process chambers 11 may occur, may result in poor pressure uniformity of the plurality of process chambers 11 during semiconductor processing.
The method for controlling the pressures of the multiple process chambers provided in this embodiment respectively obtains the pressure control parameters corresponding to the target pressure values of the multiple process chambers 11 according to the same target pressure values of the multiple process chambers 11 and the preset corresponding relationship between the pressure control parameters and the pressure values of the multiple process chambers 11, respectively outputs the pressure control parameters corresponding to the target pressure values of the multiple process chambers 11 to the pressure control devices 15 of the multiple process chambers 11, respectively controls the pressures of the multiple process chambers 11 according to the pressure control parameters corresponding to the target pressure values of the multiple process chambers 11 by means of the pressure control devices 15 of the multiple process chambers 11, so as to control the pressures of the multiple process chambers 11 at the target pressure values, and further avoids the difference between the air extraction devices of the multiple process chambers 11 and the difference between the pressure detection devices 13 of the multiple process chambers 11, and the pressure consistency of the plurality of process chambers 11 in the semiconductor process is poor due to the difference between the structures of the plurality of process chambers 11, so that the pressure consistency of the plurality of process chambers 11 in the semiconductor process can be improved.
In the present embodiment, the same target pressure value of the plurality of process chambers 11 may be a pressure value that each process chamber 11 needs to reach in order to meet the requirements of the semiconductor process during the semiconductor process. The pressure control parameter may be a set pressure value of the pressure control device 15 of each process chamber 11 in order to make each process chamber 11 reach a target pressure value, and the pressure control device 15 controls the pressure value of the process chamber 11 according to the set pressure value.
Because of the difference between the pumping devices of the multiple process chambers 11, the difference between the pressure detection devices 13 of the multiple process chambers 11, and the difference between the structures of the multiple process chambers 11, the preset corresponding relationship between the pressure control parameter and the pressure value of each process chamber 11 may be the same or different, and this also makes the pressure indication of each process chamber 11 corresponding to the target pressure value may be the same or different according to the same target pressure value of the multiple process chambers 11 and the preset corresponding relationship between the pressure control parameter and the pressure value of each process chamber 11, and during the semiconductor process, the pressure indication of the pressure detection device 13 of each process chamber 11 may be the same or different, but because the pressure control parameter corresponding to each process chamber 11 and the target pressure value is a difference avoiding the pumping devices of the multiple process chambers 11, the difference between the pressure detection devices 13 of the plurality of process chambers 11 and the difference between the structures of the plurality of process chambers 11 are obtained, so that the pressure of each process chamber 11 is at the target pressure value no matter whether the pressure readings of the pressure detection devices 13 of the process chambers 11 are the same, thereby improving the pressure uniformity of the process chambers 11 in the semiconductor process.
As shown in fig. 1 and 3, in a preferred embodiment of the present invention, the corresponding relationship between the pressure control parameter and the pressure value of each process chamber 11 may include N sub-corresponding relationships, where N is an integer greater than 1; the N sub-corresponding relations correspond to N continuous and non-intersection pressure ranges which are formed by dividing the full range of a standard pressure detection device one by one;
on this basis, step S1 may include:
s11, determining the sub-corresponding relation of each process chamber 11 corresponding to the pressure range where the target pressure value is located;
and S12, respectively obtaining the pressure control parameters corresponding to the target pressure values of the process chambers 11 according to the target pressure values and the corresponding sub-corresponding relations of the pressure ranges of the process chambers 11 corresponding to the target pressure values.
For example, the corresponding relationship between the pressure control parameter and the pressure value of each process chamber 11 may include 10 sub-corresponding relationships, i.e., N is 10, and the 10 sub-corresponding relationships correspond to 10 continuous and non-intersecting pressure ranges formed by dividing the full-scale range of a standard pressure detection device, one-to-one, for example, the 10 continuous and non-intersecting pressure ranges formed by dividing the full-scale range of the standard pressure detection device may be from equal to 0/10 full-scale range of the standard pressure detection device to less than 1/10 full-scale range of the standard pressure detection device, from equal to 1/10 full-scale range of the standard pressure detection device to less than 2/10 full-scale range of the standard pressure detection device, from equal to 2/10 full-scale range of the standard pressure detection device to less than 3/10 full-scale range of the standard pressure detection device, from equal to 3/10 full-scale range of the standard pressure detection device to less than 4/10 full-scale range of the standard pressure detection device, or the pressure detection device, The pressure detection device is equal to 4/10 standard pressure detection device full range to be less than 5/10 standard pressure detection device full range, equal to 5/10 standard pressure detection device full range to be less than 6/10 standard pressure detection device full range, equal to 6/10 standard pressure detection device full range to be less than 7/10 standard pressure detection device full range, equal to 7/10 standard pressure detection device full range to be less than 8/10 standard pressure detection device full range, equal to 8/10 standard pressure detection device full range to be less than 9/10 standard pressure detection device full range and equal to 9/10 standard pressure detection device full range to be less than 10/10 standard pressure detection device full range.
For example, if the pressure range in which the target pressure value of each process chamber 11 is located is equal to the full range from 4/10 standard pressure detection devices to less than 5/10 standard pressure detection devices, then in step S1, the sub-corresponding relationship between each process chamber 11 and the pressure range in which the target pressure value is located is equal to the full range from 4/10 pressure detection devices 13 to less than 5/10 pressure detection devices 13 is determined; then, the pressure control parameters corresponding to the target pressure values of the process chambers 11 may be obtained according to the target pressure values and the sub-corresponding relationship corresponding to the pressure ranges of the process chambers 11 corresponding to the pressure ranges from the full range of the 4/10 pressure detection device 13 to the full range of the pressure detection device 13 smaller than 5/10.
By making the corresponding relationship between the pressure control parameter and the pressure value of each process chamber 11 include N sub-corresponding relationships, and making the N sub-corresponding relationships correspond to N continuous and non-intersecting pressure ranges divided by the full range of a standard pressure detection device one to one, the corresponding relationship between the pressure control parameter and the pressure value of each process chamber 11 can be refined, so that the accuracy of each sub-corresponding relationship with respect to the corresponding relationship is improved. Since the N sub-correspondences correspond to N continuous and non-intersecting pressure ranges formed by dividing the full range of a standard pressure detection device, the target pressure value only corresponds to one pressure range, that is, only corresponds to one sub-correspondence of each process chamber 11, and then the pressure control parameters corresponding to the target pressure values of each process chamber 11 are respectively obtained according to the sub-correspondences of each process chamber 11 corresponding to the pressure range in which the target pressure value is located, so that the accuracy of the pressure control parameters corresponding to the target pressure values of each process chamber 11 can be improved, and the pressure consistency of the process chambers 11 in the semiconductor process can be further improved.
As shown in fig. 1 and 4, in a preferred embodiment of the present invention, the corresponding relationship between the pressure control parameter and the pressure value of each process chamber 11 can be obtained by the following steps:
s01, enabling each process chamber 11 to be communicated with the same transmission chamber 12, exhausting the transmission chamber 12, and recording the pressure readings of the pressure detection device 14 of the chamber 12 to be transmitted as an initial target pressure value after the pressure readings are stable;
s02, recording a first pressure index of the pressure detection device 13 of each process chamber 11 at the moment;
s03, introducing gas into the transmission chamber 12 until the pressure indication of the pressure detection device 14 of the transmission chamber 12 reaches the upper limit value of the full range, and taking the upper limit value as the maximum target pressure value;
s04, recording a second pressure index of the pressure detection device 13 of each process chamber 11 at the moment;
and S05, calculating and obtaining a fitting function of the corresponding relation of each process chamber 11 by adopting a linear fitting algorithm according to the initial target pressure value, the maximum target pressure value and the first pressure index and the second pressure index of each process chamber 11.
For example, the number of the process chambers 11 may be M, and the fitting function may be Y ═ AX + B, where Y is a pressure indication of the pressure detection device 13 of each process chamber 11, X is a pressure indication of the pressure detection device 14 of the transfer chamber 12, the pressure detection device 14 of the transfer chamber 12 is used as a standard pressure detection device, and a and B are constants that can be solved by a plurality of fitting functions in parallel.
Specifically, each process chamber 11 may be first communicated with the same transfer chamber 12 to pump the transfer chamber 12, and after the pressure readings of the pressure detection device 14 of the chamber 12 to be transferred are stabilized, the pressure readings are recorded as the initial target pressure value Xi(ii) a At the same time, the first pressure index 1Y of the pressure detection device 13 of each process chamber 11 at this time is recordedi-MYi(ii) a Then, gas is introduced into the transmission chamber 12 until the pressure indication of the pressure detection device 14 of the transmission chamber 12 reaches the upper limit value of the full range thereof, and the upper limit value is taken as the maximum target pressure value Xm(ii) a At the same time, a second pressure index 1Y of the pressure detection device 13 of the respective process chamber 11 is recordedm-MYm(ii) a Finally, according to the initial target pressure value XiMaximum target pressure value XmAnd a ground pressure indication 1Y of the first process chamber 11iAnd a second pressure index of 1YmCalculating by using a linear fitting algorithm to obtain a fitting function representing the corresponding relationship of the first process chamber 11, specifically, the simultaneous fitting function may be 1Yi＝AXi+ B and 1Ym＝AXm+ B, the solution constant A is (1Y)m-1Yi)/(Xm-Xi) The constant B is (X)m1Yi-Xi1Ym)/(Xm-Xi) The fitting function Y ═ AX + B is obtained by substituting the constants a and B into the fitting function Y ═ AX + B, so that the fitting function representing the correspondence relationship of the first process chamber 11 can be obtained as Y ═ (1Y)m-1Yi)X/(Xm-Xi)+(Xm1Yi-Xi1Ym)/(Xm-Xi)。
According to the initial target pressure value XiMaximum target pressure value XmAnd a first pressure indication 2Y for the second-Mth process chamber 11i-MYiAnd a second pressure index of 2Ym-MYmThe manner of obtaining the fitting function representing the corresponding relationship of the second to mth process chambers 11 by using the linear fitting algorithm is similar to the above manner, and is not repeated herein. For each process chamber 11, its respective constant a and constant B may be solved, and a fitting function of the respective correspondence may be determined.
As shown in fig. 1 and 5, in a preferred embodiment of the present invention, the corresponding relationship between the pressure control parameter and the pressure value of each process chamber 11 can also be obtained by the following steps:
s001, enabling each process chamber 11 to be communicated with the same transmission chamber 12, exhausting the transmission chamber 12, and recording the pressure readings of the pressure detection device 14 of the chamber 12 to be transmitted as an initial target pressure value after the pressure readings are stable;
s002, recording the pressure readings of the pressure detection devices 13 of the process chambers 11 at the moment;
s003, introducing gas into the transmission chamber 12 to enable the pressure readings of the pressure detection device 14 of the transmission chamber 12 to sequentially reach N preset target pressure values, wherein the Nth preset target pressure value is the upper limit value of the full range of the pressure detection device 14 of the transmission chamber 12, and the initial target pressure value and the N preset target pressure values divide the full range into N continuous and non-intersection pressure ranges;
s004, recording the pressure readings of the pressure detection devices 13 of the process chambers 11 when the pressure readings of the pressure detection devices 14 of the transmission chambers 12 reach a preset target pressure value;
and S005, calculating and obtaining a fitting function of the corresponding relation of the expression sub-ranges of each process chamber 11 by adopting a linear fitting algorithm according to the initial target pressure value, the N preset target pressure values, the initial target pressure values and the pressure indications of the pressure detection devices 13 of each process chamber 11 corresponding to the N preset target pressure values.
For example, the number of the process chambers 11 may be M, and the corresponding relationship between the pressure control parameter and the pressure value of each process chamber 11 may include 10 sub-corresponding relationships, that is, N is 10, and the recorded initial target pressure value, 10 preset target pressure values, and the pressure indication number of the pressure detection device 13 of each process chamber 11 corresponding to the initial target pressure value and the 10 preset target pressure values may be shown in the following table.
Figure BDA0003024035330000121
In the above table, P denotes the full scale of the pressure detecting device 14 of the transfer chamber 12, X denotes the pressure indication of the pressure detecting device 14 of the transfer chamber 12, the pressure detecting device 14 of the transfer chamber 12 serves as a standard pressure detecting device, 1Y denotes the pressure indication of the pressure detecting device 13 of the first process chamber 11 itself, and MY denotes the pressure indication of the pressure detecting device 13 of the mth process chamber 11 itself.
Specifically, each process chamber 11 may be first communicated with the same transfer chamber 12 to pump the transfer chamber 12, and after the pressure readings of the pressure detection device 14 of the chamber 12 to be transferred are stabilized, the pressure readings are recorded, and the initial target pressure value may be X0(ii) a Meanwhile, the pressure readings recorded by the pressure detecting devices 13 of the process chambers 11 can be 1Y0-MY0(ii) a Then, gas is introduced into the transmission chamber 12, so that the pressure readings of the pressure detection devices 14 of the transmission chamber 12 sequentially reach the preset target pressure value X1-X10Wherein the Nth preset target pressure value X10An initial target pressure value X which is an upper limit value of the full range of the pressure detection device 14 of the transmission chamber 120And 10 preset target pressure values X1-X10Dividing the full measuring range into 10 continuous pressure ranges without intersection; the pressure indication of the pressure detection means 14 of the transfer chamber 12 reaches a preset target pressure value every time, i.e. every time X is reached1-X10Of the process chamber 11, the pressure detection device of each process chamber 11 itself13 pressure readings at this time, 10 preset target pressure values X1-X10The pressure indication of the pressure detection device 13 of each corresponding process chamber 11 can be 1Y1-MY1、1Y2-MY2、1Y3-MY3、1Y4-MY4、1Y5-MY5、1Y6-MY6、1Y7-MY7、1Y8-MY8、1Y9-MY9And 1Y10-MY10(ii) a Finally, a linear fitting algorithm is used to calculate a fitting function representing the correspondence for each process chamber 11.
For example, the fitting function may be Y ═ AX + B, where Y is a pressure indication of the pressure detection device 13 of each process chamber 11, X is a pressure indication of the pressure detection device 14 of the transfer chamber 12, and a and B are constants that can be solved by a plurality of fitting functions in parallel. The fitting function representing the first sub-correspondence calculated to obtain the first pressure range of the first process chamber 11 using a linear fitting algorithm may be such that the simultaneous fitting function is 1Y0＝AX0+ B and 1Y1＝AX1+ B, the solution constant A is (1Y)1-1Y0)/(X1-X0) The constant B is (X)11Y0-X01Y1)/(X1-X0) The fitting function Y ═ AX + B is substituted by the constants a and B, so that a first partial correspondence can be obtained for a first pressure range of the first process chamber 11 as Y ═ 1Y + B1-1Y0)X/(X1-X0)+(X1Y0-X01Y1)/(X1-X0)。
The way of obtaining the fitting function of the 2 nd to 10 th sub-correspondences corresponding to the second to tenth pressure ranges of the first process chamber 11 by calculation using the linear fitting algorithm is similar to the above-mentioned way, and is not repeated here. Similarly, the way of calculating the fitting function of the 1 st to 10 th sub-correspondence relationship corresponding to the first to tenth pressure ranges of the second to mth process chambers 11 by using the linear fitting algorithm is similar to the above-mentioned way, and is not described herein again.
In a preferred embodiment of the present invention, each process chamber 11 is communicated with the same transfer chamber 12, and the transfer chamber 12 is evacuated, so that the pressure of each process chamber 11 can be simultaneously reduced, and thus when the pressure readings of the pressure detection devices 14 of the chambers 12 to be transferred are stable, the pressure readings of the pressure detection devices 13 of each process chamber 11 can be recorded at the same time. Moreover, the pressure of each process chamber 11 can be increased simultaneously by introducing gas into the transmission chamber 12, so that when the pressure readings of the pressure detection device 14 of the transmission chamber 12 reach the upper limit value of the full range, or when the pressure readings of the pressure detection device 14 of the transmission chamber 12 reach a preset target pressure value, the pressure readings of the pressure detection device 13 of each process chamber 11 can be recorded simultaneously, thereby shortening the time for recording the pressure readings of each process chamber 11, further improving the efficiency for recording the pressure readings of each process chamber 11, and further improving the efficiency for obtaining the corresponding relationship between the pressure control parameters and the pressure values of each process chamber 11.
In a preferred embodiment of the present invention, the pressure detecting means 14 of the transferring chamber 12 may be used as a standard pressure detecting means, and the pressure measuring accuracy of the pressure detecting means 14 of the transferring chamber 12 may be higher than that of the pressure detecting means 13 of each process chamber 11 itself, this is because, in the semiconductor process, each process chamber 11 may be filled with a corrosive process gas, and the corrosive process gas may come into contact with the pressure sensing device 13 of each process chamber 11 itself, causing corrosion to the pressure detection devices 13 of the process chambers 11, affecting the pressure measurement accuracy and the service life of the pressure detection devices 13 of the process chambers 11, without coming into contact with the pressure detection means 14 of the transfer chamber 12, which is disconnected from each process chamber 11, and since the cost of the pressure detection means increases as the pressure measurement accuracy thereof increases. Therefore, in the semiconductor process, the pressure measuring accuracy of the pressure detecting device 13 of each process chamber 11 is relatively low, and the pressure measuring accuracy of the pressure detecting device 14 of the transmission chamber 12 is relatively high, so that the corrosion of the semiconductor process to the pressure detecting device with high pressure measuring accuracy is avoided, and the use cost of the semiconductor process equipment is reduced. Since the transfer chamber 12 is connected to each process chamber 11, the pressure detection device 14 of the transfer chamber 12 may also simultaneously detect the pressures of the transfer chamber 12 and each process chamber 11 when the transfer chamber 12 is communicated with each process chamber 11.
In addition, by recording the pressure readings of the pressure detection device 14 of the transmission chamber 12 with higher precision as one or more of the initial target pressure value, the maximum target pressure value and the preset target pressure value, the precision of one or more of the recorded initial target pressure value, the maximum target pressure value and the preset target pressure value can be improved, so that the precision of the obtained corresponding relationship between the pressure control parameter and the pressure value of each process chamber 11 can be improved, and then the precision of the pressure control parameter corresponding to each process chamber 11 and the target pressure value respectively obtained according to the same target pressure value of a plurality of process chambers 11 and the preset corresponding relationship between the pressure control parameter and the pressure value of each process chamber 11 can be improved, thereby further improving the pressure consistency of the plurality of process chambers 11 in the semiconductor process.
As shown in fig. 1 and 6, in another preferred embodiment of the present invention, for any process chamber 11 in each process chamber 11, the corresponding relationship between the pressure control parameter and the pressure value of the process chamber 11 can be obtained by the following steps:
s10, arranging a standard pressure detection device on the process chamber 11, exhausting the process chamber 11, recording a pressure index of the standard pressure detection device after the pressure index is stable, and taking the pressure index as an initial target pressure value;
s20, recording a first pressure indication of the process chamber 11 itself by the pressure detection device 13;
s30, introducing gas into the process chamber 11 until the pressure indication of the standard pressure detection device reaches the upper limit value of the full range, and taking the upper limit value as the maximum target pressure value;
s40, recording a second pressure indication of the process chamber 11 itself by the pressure detection device 13;
s50, calculating a fitting function representing the corresponding relationship of the process chamber 11 by using a linear fitting algorithm according to the initial target pressure value, the maximum target pressure value, the first pressure index and the second pressure index.
Compared with the above method of simultaneously obtaining the corresponding relationship of each process chamber 11, the method of obtaining the corresponding relationship of each process chamber 11 by obtaining the corresponding relationship of each process chamber 11 one by one is different in that the pressure of each process chamber 11 is detected one by a standard pressure detection device, each process chamber 11 is exhausted one by one, and gas is introduced into each process chamber 11 one by one. For example, standard pressure sensing means may be provided on the first process chamber 11, sensing the pressure in the first process chamber 11, and a linear fitting algorithm is adopted to calculate and obtain a fitting function of the first process chamber 11, which represents the corresponding relation, according to the initial target pressure value, the maximum target pressure value, the first pressure index and the second pressure index of the first process chamber 11, and then, the standard pressure sensing device may be removably mounted from a first process chamber 11 to a next process chamber 11, detecting the pressure of the next process chamber 11, calculating a fitting function representing the corresponding relation of the next process chamber 11 by adopting a linear fitting algorithm according to the initial target pressure value, the maximum target pressure value, the first pressure index and the second pressure index of the next process chamber 11, this repetition allows to obtain a fitting function representing the correspondence for each process chamber 11 one by one.
The calculation method of the fitting function representing the corresponding relationship of each process chamber 11 is calculated by adopting a linear fitting algorithm according to the initial target pressure value, the maximum target pressure value, the first pressure index and the second pressure index in the manner of obtaining the corresponding relationship of each process chamber 11 by obtaining the corresponding relationship of each process chamber 11 one by one, and is similar to the calculation method of the fitting function representing the corresponding relationship of each process chamber 11 calculated by adopting the linear fitting algorithm according to the initial target pressure value, the maximum target pressure value, the first pressure index and the second pressure index in the manner of obtaining the corresponding relationship of each process chamber 11 at the same time, and is not repeated here.
As shown in fig. 1 and 7, in a preferred embodiment of the present invention, for any process chamber 11 in each process chamber 11, the corresponding relationship between the pressure control parameter and the pressure value of the process chamber 11 can be obtained by the following steps:
s100, arranging a standard pressure detection device on the process chamber 11, exhausting the process chamber 11, recording a pressure index of the standard pressure detection device after the pressure index is stable, and taking the pressure index as an initial target pressure value;
s200, recording the pressure indication of the pressure detection device 13 of the process chamber 11 at the moment;
s300, introducing gas into the process chamber 11, and enabling the pressure readings of the standard pressure detection device to sequentially reach N preset target pressure values, wherein the Nth target pressure value is the upper limit value of the full range of the standard pressure detection device, and the initial target pressure value and the N preset target pressure values divide the full range into N continuous and non-intersection pressure ranges;
s400, recording the pressure readings of the pressure detection device 13 of the process chamber 11 when the pressure readings of the standard pressure detection device reach a preset target pressure value;
s500, calculating and obtaining a fitting function of the corresponding relation of the expression sub-ranges of each pressure range of the process chamber 11 by adopting a linear fitting algorithm according to the initial target pressure value, the N preset target pressure values, the pressure indications of the pressure detection devices 13 of the process chamber 11 corresponding to the initial target pressure values and the N preset target pressure values.
Compared with the above method of simultaneously obtaining the corresponding relationship of each process chamber 11, the method of obtaining the corresponding relationship of each process chamber 11 by obtaining the corresponding relationship of each process chamber 11 one by one is different in that the pressure of each process chamber 11 is detected one by a standard pressure detection device, each process chamber 11 is exhausted one by one, and gas is introduced into each process chamber 11 one by one. For example, a standard pressure detection device may be disposed on the first process chamber 11, detect the pressure of the first process chamber 11, and calculate a fitting function representing a corresponding relationship of the first process chamber 11 by using a linear fitting algorithm according to an initial target pressure value, N preset target pressure values, and a pressure indication of the pressure detection device of the process chamber itself corresponding to the initial target pressure values and the N preset target pressure values of the first process chamber 11, and then, the standard pressure detection device may be detached from the first process chamber 11 and mounted on the next process chamber 11, detect the pressure of the next process chamber 11, and detect the pressure indication of the pressure detection device of the process chamber itself corresponding to the N preset target pressure values according to the initial target pressure values, the N preset target pressure values, and the initial target pressure values of the next process chamber 11, and calculating by adopting a linear fitting algorithm to obtain a fitting function representing the corresponding relation of the next process chamber 11, and repeating the steps to obtain the fitting functions representing the corresponding relation of each process chamber 11 one by one.
By obtaining the corresponding relations of the process chambers 11 one by one, obtaining the pressure indications of the pressure detection devices of the process chambers corresponding to the initial target pressure value, the N preset target pressure values and the initial target pressure value in the corresponding relations of the process chambers 11, and calculating the fitting function representing the corresponding relations of the process chambers 11 by adopting a linear fitting algorithm, the calculation method is similar to the calculation method of obtaining the fitting function representing the corresponding relations of the process chambers 11 by adopting the linear fitting algorithm in the corresponding relations of the process chambers 11, according to the initial target pressure value, the N preset target pressure values, the initial target pressure value and the pressure indications of the pressure detection devices of the process chambers corresponding to the N preset target pressure values, and will not be described in detail herein.
In a preferred embodiment of the present invention, the pressure measuring accuracy of the standard pressure measuring device may be higher than that of the pressure measuring device 13 of each process chamber 11 itself, this is because, in the semiconductor process, each process chamber 11 may be filled with a corrosive process gas, and the corrosive process gas may come into contact with the pressure sensing device 13 of each process chamber 11 itself, causing corrosion to the pressure detection devices 13 of the process chambers 11, affecting the pressure measurement accuracy and the service life of the pressure detection devices 13 of the process chambers 11, in the semiconductor process, however, the reference pressure detecting apparatus is detached from the process chamber 11, so that the corrosive process gas does not come into contact with the reference pressure detecting apparatus, and the cost of the pressure detecting apparatus increases as the pressure measuring accuracy thereof increases. Therefore, in the semiconductor process, the pressure measuring accuracy of the pressure detecting device 13 of each process chamber 11 is relatively low, and the pressure measuring accuracy of the standard pressure detecting device is relatively high, so that the standard pressure detecting device with high pressure measuring accuracy is prevented from being corroded by the semiconductor process, and the use cost of semiconductor process equipment is reduced.
And, by recording the pressure readings of the standard pressure detection device with higher precision as one or more of the initial target pressure value, the maximum target pressure value and the preset target pressure value, the precision of one or more of the recorded initial target pressure value, the maximum target pressure value and the preset target pressure value can be improved, so that the precision of the obtained corresponding relation between the pressure control parameter and the pressure value of each process chamber 11 can be improved, and then the precision of the pressure control parameter corresponding to each process chamber 11 and the target pressure value respectively obtained according to the same target pressure value of a plurality of process chambers 11 and the preset corresponding relation between the pressure control parameter and the pressure value of each process chamber 11 can be improved, thereby further improving the pressure consistency of the plurality of process chambers 11 in the semiconductor process.
In a preferred embodiment of the present invention, the N preset target pressure values may satisfy the following formula:
Figure BDA0003024035330000191
wherein, P(i)An ith preset target pressure value, i is 1, 2,.., N; prThe upper limit of the full range of the pressure sensing device 14 or the standard pressure sensing device of the transfer chamber 12.
For example, each of the process chambers 11 may include 10 sub-correspondences, and the 1 st preset target pressure value is P(1)＝1/10Pr。
In a preferred embodiment of the present invention, after each process chamber 11 is communicated with the same transfer chamber 12 and before the gas is introduced into the transfer chamber 12, the overall leakage rate of the transfer chamber 12 and the plurality of process chambers 11 may be checked to determine whether the overall leakage rate of the transfer chamber 12 and the plurality of process chambers 11 meets the semiconductor process requirement, and if the overall leakage rate of the transfer chamber 12 and the plurality of process chambers 11 meets the semiconductor process requirement, the gas is introduced into the transfer chamber 12.
Therefore, on the premise that the overall leakage rate of the transmission chamber 12 and the plurality of process chambers 11 meets the requirements of the semiconductor process, the pressure readings of the process chambers 11 are recorded, and the recorded pressure readings of the process chambers 11 are prevented from being influenced by the air leakage of the transmission chamber 12 and the process chambers 11, so that the accuracy of the recorded pressure readings of the process chambers 11 is improved, the accuracy of the obtained corresponding relation between the pressure control parameters and the pressure values of the process chambers 11 is improved, and the pressure consistency of the process chambers 11 in the semiconductor process is further improved.
In a preferred embodiment of the present invention, before each process chamber 11 is communicated with the same transfer chamber 12, the transfer chamber 12 may be disconnected from each process chamber 11, the leakage rates of the transfer chamber 12 and each process chamber 11 are respectively detected, whether the leakage rates of the transfer chamber 12 and each process chamber 11 meet the semiconductor process requirement is determined, and if the leakage rates of the transfer chamber 12 and each process chamber 11 meet the semiconductor process requirement, each process chamber 11 is communicated with the same transfer chamber 12.
Therefore, on the premise that the leakage rate of the transmission chamber 12 and the leakage rate of each process chamber 11 meet the requirements of the semiconductor process, the pressure readings of each process chamber 11 are recorded, and the recorded pressure readings of each process chamber 11 are prevented from being influenced by the air leakage of the transmission chamber 12 and each process chamber 11, so that the accuracy of the recorded pressure readings of each process chamber 11 is improved, the accuracy of the obtained corresponding relation between the pressure control parameters and the pressure values of each process chamber 11 is improved, and the pressure consistency of the process chambers 11 in the semiconductor process is further improved.
In a preferred embodiment of the present invention, after the transfer chamber 12 is disconnected from each process chamber 11, the temperature of each process chamber 11 may reach the semiconductor process temperature before the leak rate of the transfer chamber 12 and each process chamber 11 is detected.
Therefore, on the premise that the temperatures of the transmission chamber 12 and each process chamber 11 reach the semiconductor process temperature, the pressure readings of each process chamber 11 are recorded, the recorded pressure readings of each process chamber 11 are prevented from being influenced by the temperatures of the transmission chamber 12 and each process chamber 11, and the recorded pressure readings of each process chamber 11 are enabled to be closer to the real situation of the pressure of each process chamber 11 in the semiconductor process, so that the accuracy of the recorded pressure readings of each process chamber 11 is improved, the accuracy of the obtained corresponding relation between the pressure control parameters and the pressure values of each process chamber 11 is improved, and the pressure consistency of the process chambers 11 in the semiconductor process is further improved.
As shown in fig. 1, as another technical solution, an embodiment of the present invention further provides a semiconductor processing apparatus, which includes a control device (not shown in the figure) and a plurality of process chambers 11, wherein each process chamber 11 is provided with a pressure detection device 13, and each process chamber 11 corresponds to a pressure control device 15, wherein the pressure detection device 13 is configured to detect a pressure of the process chamber 11, and the control device is communicatively connected to the plurality of pressure control devices 15 and configured to control the pressure of the process chamber 11 through the pressure control device 15 by using the control method provided by the embodiment of the present invention.
The semiconductor process equipment provided by the embodiment of the invention is connected with the plurality of pressure control devices 15 in a communication way, so that the pressure of the process chamber 11 is controlled by the control device through the pressure control device 15 by adopting the control method of the pressure of the plurality of process chambers provided by the embodiment of the invention, and the pressure consistency of the plurality of process chambers 11 in the semiconductor process can be improved.
Alternatively, the pressure detection means 13 may comprise a pressure gauge.
Alternatively, the pressure control device 15 may comprise a pressure regulating valve.
As shown in fig. 1, in a preferred embodiment of the present invention, the semiconductor processing equipment may further include a transfer chamber 12, the transfer chamber 12 may also be provided with a pressure detection device 14 for detecting the pressure of the transfer chamber 12, and the transfer chamber 12 may be selectively communicated with the plurality of process chambers 11.
By selectively communicating the transfer chamber 12 with the plurality of process chambers 11, the pressure of each process chamber 11 can be simultaneously reduced by pumping the transfer chamber 12 when the transfer chamber 12 is communicated with the plurality of process chambers 11, so that the pressure readings of the pressure detection devices 13 of the respective process chambers 11 can be recorded simultaneously when the pressure readings of the pressure detection devices 14 of the chambers 12 to be transferred are stable. The pressure of each process chamber 11 can be increased simultaneously by introducing gas into the transmission chamber 12, so that when the pressure readings of the pressure detection device 14 of the transmission chamber 12 reach the upper limit value of the full range, or when the pressure readings of the pressure detection device 14 of the transmission chamber 12 reach a preset target pressure value, the pressure readings of the pressure detection device 13 of each process chamber 11 can be recorded simultaneously, thereby shortening the time for recording the pressure readings of each process chamber 11, further improving the efficiency for recording the pressure readings of each process chamber 11, and further improving the efficiency for obtaining the corresponding relation of each process chamber 11.
In a preferred embodiment of the present invention, each process chamber 11 may be provided with an interface for mounting a standard pressure sensing device. So that a standard pressure sensing device can be connected with each process chamber 11 through an interface provided on each process chamber 11.
As shown in fig. 1, in a preferred embodiment of the present invention, the semiconductor processing equipment may further include a plurality of on-off valves 23, the plurality of on-off valves 23 and the plurality of process chambers 11 are disposed between the corresponding process chambers 11 and the transfer chamber 12 in a one-to-one correspondence, and each of the on-off valves 23 is configured to control on-off between the corresponding process chamber 11 and the transfer chamber 12. That is, by controlling the opening or closing of each of the on-off valves 23, the communication between the corresponding process chamber 11 and the transfer chamber 12 can be made or made.
As shown in fig. 1, in a preferred embodiment of the present invention, the semiconductor processing equipment may further include a plurality of first gas inlet devices 18, the plurality of first gas inlet devices 18 are disposed on the corresponding process chambers 11 in one-to-one correspondence with the plurality of process chambers 11, and each gas inlet device is configured to deliver the semiconductor process gas into the corresponding process chamber 11.
As shown in fig. 1, in a preferred embodiment of the present invention, the semiconductor processing apparatus may further include a second gas supply device 22, the second gas supply device 22 being disposed on the transfer chamber 12 for supplying a gas into the transfer chamber 12.
Alternatively, the gas delivered into the transfer chamber 12 by the second gas inlet means 22 may be nitrogen.
As shown in fig. 1, in a preferred embodiment of the present invention, the semiconductor processing equipment may further include a plurality of first pumping lines 16 and a plurality of first pumping devices 17, wherein the plurality of first pumping lines 16 are in one-to-one correspondence with the plurality of process chambers 11, the plurality of first pumping devices 17 are in one-to-one correspondence with the plurality of first pumping lines 16, each first pumping device 17 is configured to pump the corresponding process chamber 11 through the corresponding first pumping line 16, and the pressure control device 15 of each process chamber 11 is disposed on the corresponding first pumping line 16 and is configured to adjust the flow rate of the gas flowing through the corresponding first pumping line 16.
For example, when the first pumping device 17 pumps the corresponding process chamber 11, the pressure control device 15 of each process chamber 11 outputs the pressure control parameter corresponding to each process chamber 11, and the flow rate of the gas pumped from the corresponding process chamber 11 through the corresponding first pumping line 16 by the first pumping device 17 can be adjusted by the pressure control device 15, so that the pressure of the corresponding process chamber 11 can be controlled by the pressure control device 15.
When the first gas inlet device 18 delivers the semiconductor process gas into the corresponding process chamber 11, the pressure control device 15 of each process chamber 11 outputs the pressure control parameter corresponding to each process chamber 11, and the flow rate of the semiconductor process gas flowing out of the corresponding process chamber 11 through the corresponding first pumping line 16 can be adjusted by the pressure control device 15, so that the pressure of the corresponding process chamber 11 can be controlled by the pressure control device 15.
As shown in fig. 1, in a preferred embodiment of the present invention, the semiconductor processing equipment may further include a second pumping line 19 and a second pumping device 21, wherein the second pumping line 19 is communicated with the transfer chamber 12, the second pumping device 21 is communicated with the second pumping line 19, the second pumping device 21 is used for pumping the corresponding process chamber 11 through the corresponding second pumping line 19, and the pressure control device 15 of the transfer chamber 12 is disposed on the second pumping line 19 and is used for adjusting the flow rate of the gas flowing through the second pumping line 19.
When the transmission chamber 12 is communicated with each process chamber 11, the transmission chamber 12 can be pumped by the second pumping device 21, so that the pressure of each process chamber 11 is simultaneously pumped and reduced, and thus, on one hand, the corresponding process chamber 11 does not need to be pumped by the first pumping device 17 of each process chamber 11, thereby reducing the operation difficulty, and on the other hand, because the transmission chamber 12 is communicated with each process chamber 11, the efficiency of pumping the transmission chamber 12 and each process chamber 11 can be improved. The pressure of the transfer chamber 12 can be adjusted by adjusting the flow rate of the gas flowing through the second suction line 19 by means of the pressure control device 15 of the transfer chamber 12.
When each process chamber 11 is communicated with the same transmission chamber 12, the gas can be conveyed into the transmission chamber 12 by the second gas inlet device 22, and then conveyed into each process chamber 11, so that the operation difficulty can be reduced, and the gas conveying efficiency can be improved.
In summary, the method for controlling the pressures of the process chambers and the semiconductor processing apparatus provided in the present invention can improve the pressure uniformity of the process chambers 11 in the semiconductor process.
It is to be understood that the above embodiments are merely exemplary embodiments that have been employed to illustrate the principles of the present invention, and that the present invention is not limited thereto. It will be apparent to those skilled in the art that various modifications and improvements can be made without departing from the spirit and substance of the invention, and these modifications and improvements are also considered to be within the scope of the invention.

Claims (10)

1. A method of controlling pressure in a plurality of process chambers in a semiconductor processing tool, comprising the steps of:
s1, respectively obtaining pressure control parameters corresponding to the target pressure values of the process chambers according to the same target pressure values of the process chambers and the preset corresponding relations between the pressure control parameters and the pressure values of the process chambers;
and S2, respectively outputting the pressure control parameters corresponding to the target pressure values to the pressure control devices of the process chambers.
2. The control method of claim 1, wherein the correspondence of each process chamber includes N sub-correspondences, N being an integer greater than 1; the N sub-corresponding relations correspond to N continuous and non-intersection pressure ranges formed by dividing the full range of a standard pressure detection device one by one;
the step S1 includes:
s11, determining the sub-corresponding relation of each process chamber corresponding to the pressure range where the target pressure value is located;
and S12, respectively obtaining pressure control parameters corresponding to the target pressure values of the process chambers according to the target pressure values and the corresponding sub-corresponding relations of the pressure ranges of the process chambers corresponding to the target pressure values.
3. The control method of claim 1, wherein the correspondence of each process chamber is obtained by:
s01, enabling each process chamber to be communicated with the same transmission chamber, exhausting the transmission chamber, and recording a pressure reading of a pressure detection device of the transmission chamber after the pressure reading is stable to serve as an initial target pressure value;
s02, recording a first pressure index of the pressure detection device of each process chamber;
s03, introducing gas into the transmission chamber until the pressure indication of the pressure detection device of the transmission chamber reaches the upper limit value of the full range of the pressure detection device, and taking the upper limit value as the maximum target pressure value;
s04, recording a second pressure index of the pressure detection device of each process chamber;
and S05, calculating and obtaining a fitting function of each process chamber, which represents the corresponding relation, by adopting a linear fitting algorithm according to the initial target pressure value, the maximum target pressure value and the first pressure index and the second pressure index of each process chamber.
4. The control method of claim 2, wherein the correspondence of each process chamber is obtained by:
s001, communicating each process chamber with the same transmission chamber, exhausting the transmission chambers, and recording pressure readings of a pressure detection device of the transmission chambers after the pressure readings are stable to serve as initial target pressure values;
s002, recording the pressure readings of the pressure detection devices of the process chambers at the moment;
s003, introducing gas into the transmission chamber, and enabling the pressure readings of a pressure detection device of the transmission chamber to sequentially reach N preset target pressure values, wherein the Nth preset target pressure value is the upper limit value of the full range of the pressure detection device of the transmission chamber, and the initial target pressure value and the N preset target pressure values divide the full range into N continuous and non-intersection pressure ranges;
s004, recording the pressure readings of the pressure detection devices of the process chambers when the pressure readings of the pressure detection devices of the transmission chambers reach a preset target pressure value;
and S005, calculating and obtaining a fitting function representing the sub-corresponding relation of each pressure range of each process chamber by adopting a linear fitting algorithm according to the initial target pressure value, the N preset target pressure values, the initial target pressure values and the pressure indications of the pressure detection devices of the process chambers corresponding to the N preset target pressure values.
5. The control method according to claim 1, wherein the corresponding relationship of each process chamber is obtained by:
s10, arranging a standard pressure detection device on the process chamber, exhausting the process chamber, recording a pressure index of the standard pressure detection device after the pressure index is stable, and taking the pressure index as an initial target pressure value;
s20, recording a first pressure index of the pressure detection device of the process chamber at the moment;
s30, introducing gas into the process chamber until the pressure indication value of the standard pressure detection device reaches the upper limit value of the full range of the standard pressure detection device, and taking the upper limit value as the maximum target pressure value;
s40, recording a second pressure index of the pressure detection device of the process chamber at the moment;
and S50, calculating and obtaining a fitting function of the process chamber, which represents the corresponding relation, by adopting a linear fitting algorithm according to the initial target pressure value, the maximum target pressure value, the first pressure index and the second pressure index.
6. The control method according to claim 2, wherein the corresponding relationship of each process chamber is obtained by:
s100, arranging a standard pressure detection device on the process chamber, exhausting the process chamber, recording a pressure index of the standard pressure detection device after the pressure index is stable, and taking the pressure index as an initial target pressure value;
s200, recording the pressure readings of the pressure detection device of the process chamber;
s300, introducing gas into the process chamber, and enabling the pressure readings of the standard pressure detection device to sequentially reach N preset target pressure values, wherein the Nth target pressure value is the upper limit value of the full range of the standard pressure detection device, and the initial target pressure value and the N preset target pressure values divide the full range into N continuous and non-intersection pressure ranges;
s400, recording the pressure readings of the pressure detection device of the process chamber when the pressure readings of the standard pressure detection device reach a preset target pressure value;
s500, calculating and obtaining a fitting function representing the sub-corresponding relation of each pressure range of the process chamber by adopting a linear fitting algorithm according to the initial target pressure value, the N preset target pressure values, the initial target pressure values and the pressure indications of the pressure detection device of the process chamber corresponding to the N preset target pressure values.
7. The control method according to claim 4 or 6, characterized in that the N preset target pressure values satisfy the following formula:
Figure FDA0003024035320000031
wherein，P(i)An ith preset target pressure value, i is 1, 2,.., N; prIs the upper limit value of the full range of the pressure detection device of the transmission chamber or the standard pressure detection device.
8. The semiconductor processing equipment is characterized by comprising a control device and a plurality of process chambers, wherein each process chamber is provided with a pressure detection device and corresponds to one pressure control device, and the pressure detection device comprises a pressure detection device body,
the pressure detection device is used for detecting the pressure of the process chamber, and the control device is connected with a plurality of pressure control devices in communication and used for controlling the pressure of the process chamber through the pressure control devices by adopting the control method of any one of claims 1 to 7.
9. The semiconductor processing apparatus of claim 8, further comprising a transfer chamber, wherein the transfer chamber is also configured with a pressure detection device for detecting a pressure of the transfer chamber, and wherein the transfer chamber is selectively communicable with a plurality of the process chambers.
10. The semiconductor processing apparatus of claim 8, wherein each process chamber is provided with an interface for mounting a standard pressure sensing device.
CN202110411361.5A 2021-04-16 2021-04-16 Method for controlling pressure of multiple process chambers and semiconductor process equipment Pending CN113515095A (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
CN202110411361.5A CN113515095A (en) 2021-04-16 2021-04-16 Method for controlling pressure of multiple process chambers and semiconductor process equipment
PCT/CN2022/083541 WO2022218142A1 (en) 2021-04-16 2022-03-29 Control method for pressure of multiple process chambers, and semiconductor process device
TW111111889A TWI820656B (en) 2021-04-16 2022-03-29 Pressure control method of multiple process chambers and semiconductor process equipment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202110411361.5A CN113515095A (en) 2021-04-16 2021-04-16 Method for controlling pressure of multiple process chambers and semiconductor process equipment

Publications (1)

Publication Number Publication Date
CN113515095A true CN113515095A (en) 2021-10-19

Family

ID=78061786

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202110411361.5A Pending CN113515095A (en) 2021-04-16 2021-04-16 Method for controlling pressure of multiple process chambers and semiconductor process equipment

Country Status (3)

Country Link
CN (1) CN113515095A (en)
TW (1) TWI820656B (en)
WO (1) WO2022218142A1 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2022218142A1 (en) * 2021-04-16 2022-10-20 北京北方华创微电子装备有限公司 Control method for pressure of multiple process chambers, and semiconductor process device

Citations (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000181548A (en) * 1998-12-18 2000-06-30 Toshiba Corp Vacuum processor and method for controlling pressure therefor
US6131307A (en) * 1997-08-07 2000-10-17 Tokyo Electron Limited Method and device for controlling pressure and flow rate
US6279373B1 (en) * 1997-08-22 2001-08-28 Globitech, Inc. Automatic reference-pressure balance method
JP2002013500A (en) * 2000-06-30 2002-01-18 Ckd Corp Vacuum pressure control system in process chamber
US20020182878A1 (en) * 1999-12-14 2002-12-05 Eiji Hirose Pressure control method
CN1864112A (en) * 2003-10-06 2006-11-15 株式会社富士金 Device for controlling chamber inner pressure and inner pressure controlled-type chamber
CN102741976A (en) * 2010-04-30 2012-10-17 应用材料公司 Twin chamber processing system with shared vacuum pump
CN104008945A (en) * 2013-02-22 2014-08-27 中微半导体设备(上海)有限公司 Substrate processing method used for plasma processing device
CN109642319A (en) * 2016-08-13 2019-04-16 应用材料公司 For controlling the method and device for flowing to the air-flow of processing chamber
CN111831022A (en) * 2019-04-18 2020-10-27 北京七星华创流量计有限公司 Chamber pressure control method and device and semiconductor equipment
CN111883465A (en) * 2020-08-05 2020-11-03 北京七星华创流量计有限公司 Process chamber pressure control device
CN112017934A (en) * 2019-05-29 2020-12-01 北京北方华创微电子装备有限公司 Pressure control method and system

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4162877B2 (en) * 2001-08-30 2008-10-08 株式会社吉野工業所 Composite container
US20070289604A1 (en) * 2004-04-30 2007-12-20 Yukio Fukunaga Substrate Processing Apparatus
CN101727111B (en) * 2008-10-15 2011-09-14 北京北方微电子基地设备工艺研究中心有限责任公司 Method, device and system for chamber pressure control
CN103184413A (en) * 2011-12-28 2013-07-03 英莱新能（上海）有限公司 Vacuum coater and vacuum coating method
CN102646619B (en) * 2012-04-28 2014-12-03 中微半导体设备(上海)有限公司 Cavity pressure control method
US9606519B2 (en) * 2013-10-14 2017-03-28 Applied Materials, Inc. Matching process controllers for improved matching of process
CN107452587B (en) * 2016-06-01 2019-10-11 北京北方华创微电子装备有限公司 A kind of compress control method and control system of transmission chamber
CN112281143A (en) * 2020-09-25 2021-01-29 北京北方华创微电子装备有限公司 Semiconductor device and chamber pressure control method
CN113515095A (en) * 2021-04-16 2021-10-19 北京北方华创微电子装备有限公司 Method for controlling pressure of multiple process chambers and semiconductor process equipment

Patent Citations (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6131307A (en) * 1997-08-07 2000-10-17 Tokyo Electron Limited Method and device for controlling pressure and flow rate
US6279373B1 (en) * 1997-08-22 2001-08-28 Globitech, Inc. Automatic reference-pressure balance method
JP2000181548A (en) * 1998-12-18 2000-06-30 Toshiba Corp Vacuum processor and method for controlling pressure therefor
US20020182878A1 (en) * 1999-12-14 2002-12-05 Eiji Hirose Pressure control method
JP2002013500A (en) * 2000-06-30 2002-01-18 Ckd Corp Vacuum pressure control system in process chamber
CN1864112A (en) * 2003-10-06 2006-11-15 株式会社富士金 Device for controlling chamber inner pressure and inner pressure controlled-type chamber
CN102741976A (en) * 2010-04-30 2012-10-17 应用材料公司 Twin chamber processing system with shared vacuum pump
CN104008945A (en) * 2013-02-22 2014-08-27 中微半导体设备(上海)有限公司 Substrate processing method used for plasma processing device
CN109642319A (en) * 2016-08-13 2019-04-16 应用材料公司 For controlling the method and device for flowing to the air-flow of processing chamber
CN111831022A (en) * 2019-04-18 2020-10-27 北京七星华创流量计有限公司 Chamber pressure control method and device and semiconductor equipment
CN112017934A (en) * 2019-05-29 2020-12-01 北京北方华创微电子装备有限公司 Pressure control method and system
CN111883465A (en) * 2020-08-05 2020-11-03 北京七星华创流量计有限公司 Process chamber pressure control device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2022218142A1 (en) * 2021-04-16 2022-10-20 北京北方华创微电子装备有限公司 Control method for pressure of multiple process chambers, and semiconductor process device

Also Published As

Publication number Publication date
TW202308002A (en) 2023-02-16
TWI820656B (en) 2023-11-01
WO2022218142A1 (en) 2022-10-20

Similar Documents

Publication Publication Date Title
KR101425007B1 (en) Mass flow verifiers capable of providing different volumes, and related methods
TWI787427B (en) Method of determining flow rate of gas
US11519773B2 (en) Methods, systems, and apparatus for mass flow verification based on choked flow
US7881886B1 (en) Methods for performing transient flow prediction and verification using discharge coefficients
WO2007102319A1 (en) Gas flow rate verification unit
CN113515095A (en) Method for controlling pressure of multiple process chambers and semiconductor process equipment
KR20100115788A (en) Control method and processor of exhaust gas flow rate of processing chamber
TWI782196B (en) Methods, systems, and apparatus for mass flow verification based on rate of pressure decay
CN109425414B (en) Method for checking a flow measurement system
CN110323158B (en) Substrate processing system and method for determining gas flow rate
CN107104067B (en) Flow line inflatable volume member
KR102225988B1 (en) Method of manufacturing semiconductor device, method of managing parts, substrate processing apparatus and substrate processing program
JP7411479B2 (en) How to calibrate multiple chamber pressure sensors
US11585717B2 (en) Method for calibrating plurality of chamber pressure sensors and substrate processing system
US10312119B2 (en) Line charge volume with integrated pressure measurement
CN111569594A (en) Tail gas treatment device and semiconductor equipment
CN107887303B (en) Substrate processing apparatus
US11326914B2 (en) Flow rate measurement apparatus and method for more accurately measuring gas flow to a substrate processing system
CN113631753A (en) Apparatus and method for plasma treatment of containers
TWI797474B (en) System and method for realizing gas flow verification in plasma processing device
JP2010283211A (en) Plasma treatment apparatus

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination