JP2002249876A - Evacuating method and vacuum device - Google Patents
Evacuating method and vacuum deviceInfo
- Publication number
- JP2002249876A JP2002249876A JP2001050607A JP2001050607A JP2002249876A JP 2002249876 A JP2002249876 A JP 2002249876A JP 2001050607 A JP2001050607 A JP 2001050607A JP 2001050607 A JP2001050607 A JP 2001050607A JP 2002249876 A JP2002249876 A JP 2002249876A
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- JP
- Japan
- Prior art keywords
- vacuum
- pressure
- chamber
- evacuation
- positive pressure
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
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- Physical Vapour Deposition (AREA)
- Chemical Vapour Deposition (AREA)
- Drying Of Semiconductors (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、真空排気方法およ
び真空装置に関し、特にベースプレッシャに到達するま
での排気時間を短縮できる真空排気方法および真空装置
に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a vacuum evacuation method and a vacuum apparatus, and more particularly, to a vacuum evacuation method and a vacuum apparatus capable of shortening an evacuation time required to reach a base pressure.
【０００２】[0002]
【従来の技術】半導体デバイスを製造する際、半導体ウ
ェーハに対してイオン注入、ドライエッチング、成膜処
理などの各種処理に用いられる真空装置は、真空チャン
バを大気圧に開放するとベースプレッシャまでの排気時
間が長時間となるため、ランニングサイクルごとに真空
チャンバを大気圧に開放する一部の真空装置を除き、真
空チャンバの両側または片側に半導体ウェーハの搬入/
搬出用の予備室を設けて真空チャンバをランニングサイ
クルにおいて常に高真空に保つようにして、半導体ウェ
ーハに対して上記処理を行う時のそれぞれの処理におけ
る真空排気時間を短くしている。2. Description of the Related Art When manufacturing semiconductor devices, a vacuum apparatus used for various processes such as ion implantation, dry etching, and film forming process on a semiconductor wafer is evacuated to a base pressure when a vacuum chamber is opened to atmospheric pressure. Since the time is long, except for some vacuum devices that open the vacuum chamber to atmospheric pressure in each running cycle, loading / unloading semiconductor wafers on both sides or one side of the vacuum chamber
A preliminary chamber for unloading is provided so that the vacuum chamber is always kept at a high vacuum in the running cycle, so that the vacuum evacuation time in each processing when the above-mentioned processing is performed on the semiconductor wafer is shortened.
【０００３】[0003]
【発明が解決しようとする課題】ところが、上述の真空
チャンバをランニングサイクルにおいて常に高真空に保
つ真空装置でも、メンテナンスのときには真空チャンバ
を大気圧に開放しなければならず、そのときチャンバ内
壁に吸着した水分を排気し、再度ベースプレッシャに到
達させるまでの排気時間は、短く済むもので３〜４時
間、長くかかるもので７時間以上と長時間かかる。特に
真空チャンバ内をウェット洗浄した場合には、真空チャ
ンバ内壁に吸着した水分の量が多くなり、ベースプレッ
シャまで到達させるのに相当長時間を必要とするという
問題がある。本発明は上記問題点に鑑み、真空チャンバ
内壁に吸着した水分の掃引および置換の効率を高めるこ
とによりベースプレッシャまでの排気時間を短縮できる
真空排気方法および真空装置を提供することを目的とす
る。However, even with the above-described vacuum apparatus that maintains the vacuum chamber at a high vacuum during the running cycle, the vacuum chamber must be opened to the atmospheric pressure during maintenance, and at that time, the vacuum chamber is adsorbed on the inner wall of the chamber. The evacuation time required for exhausting the moisture and reaching the base pressure again is as long as 3 to 4 hours if it is short and 7 hours or more if it is long. In particular, when the inside of the vacuum chamber is wet-cleaned, the amount of moisture adsorbed on the inner wall of the vacuum chamber increases, and there is a problem that it takes a considerably long time to reach the base pressure. In view of the above problems, an object of the present invention is to provide a vacuum evacuation method and a vacuum apparatus capable of shortening the evacuation time until base pressure by increasing the efficiency of sweeping and replacing moisture adsorbed on the inner wall of a vacuum chamber.
【０００４】[0004]
【課題を解決するための手段】本発明の真空排気方法
は、真空チャンバを大気圧に開放した後、再度ベースプ
レッシャに到達させるための真空排気方法において、ベ
ースプレッシャまでの真空引きの前に、一旦、真空チャ
ンバを乾燥不活性ガスで陽圧にすることを特徴とする。
上記真空排気方法において、陽圧の状態を、所定真空度
または所定時間までの真空引きを介して、１回以上繰り
返すことを特徴とする。本発明の真空装置は、上記真空
排気方法を用いた真空装置であって、乾燥不活性ガス導
入のためのガス供給ラインと、陽圧の圧抜きのための圧
抜きラインとをチャンバに付設したことを特徴とする。According to a vacuum evacuation method of the present invention, in a vacuum evacuation method for opening a vacuum chamber to atmospheric pressure and then reaching a base pressure again, before evacuation to a base pressure, Once, the vacuum chamber is set to a positive pressure with a dry inert gas.
In the above-described vacuum evacuation method, the state of the positive pressure is repeated at least once through evacuation until a predetermined degree of vacuum or a predetermined time. The vacuum apparatus of the present invention is a vacuum apparatus using the above-described vacuum evacuation method, wherein a gas supply line for introducing a dry inert gas and a depressurizing line for depressurizing a positive pressure are provided in a chamber. It is characterized by the following.
【０００５】[0005]
【発明の実施の形態】以下、この発明の一実施例の真空
排気方法およびこの方法を用いた真空装置について説明
する。先ず、大気圧に開放された真空チャンバ内を再度
ベースプレッシャの高真空に復帰させるための真空排気
方法は、図１にチャンバ内の圧力特性を示すように、 （１）先ず、大気圧から所定真空度として、例えば、１
０−４ＭＰａまで、または所定時間として、例えば、２
０分間、真空引きを行う。 （２）次に、真空チャンバ内に、例えば、１．５×１０
−１ＭＰaになるまで乾燥不活性ガスを導入して、チャ
ンバ内を陽圧状態とし、所定時間として、例えば、１０
分間この状態を保持する。 （３）次に、チャンバ内を大気圧近辺の陽圧まで圧抜き
する。 （４）次に、大気圧近辺の陽圧から所定真空度として、
例えば、１０−５ＭＰａまで、または所定時間として、
例えば、２０分間、真空引きを行う。尚、以下の（５）
の方法を行わない場合は、ベースプレッシャになるまで
通常の真空引きを行う。 （５）同様に、（２）〜（４）の方法を１回または繰り
返して複数回行う（図１では２回）。このとき、陽圧状
態を保持する所定時間および真空引きの所定時間は一定
の時間でも、繰り返しごとに変化させてもよい（図１で
は、陽圧状態を保持する所定時間は、１０分間で一定で
ある）。また、所定真空度は、一定の真空度でも、繰り
返しごとに低い値に変化させていってもよい（図１で
は、１回目の繰り返し時の所定真空度は、１０−６ＭＰ
ａである）。尚、（５）において、（４）の後、（２）
へ戻らない場合は、ベースプレッシャになるまで通常の
真空引きを行う。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, a vacuum evacuation method according to an embodiment of the present invention and a vacuum apparatus using the method will be described. First, a vacuum evacuation method for returning the inside of the vacuum chamber opened to the atmospheric pressure to the high vacuum of the base pressure again as shown in FIG. 1 shows the pressure characteristics in the chamber. As the degree of vacuum, for example, 1
0-4 MPa or as a predetermined time, for example, 2
Vacuum for 0 minutes. (2) Next, for example, 1.5 × 10
-1 MPa, a dry inert gas is introduced, the inside of the chamber is brought into a positive pressure state, and as a predetermined time, for example, 10
Hold this state for a minute. (3) Next, the inside of the chamber is depressurized to a positive pressure near the atmospheric pressure. (4) Next, from a positive pressure near the atmospheric pressure to a predetermined degree of vacuum,
For example, up to 10 −5 MPa or as a predetermined time,
For example, evacuation is performed for 20 minutes. In addition, the following (5)
If the above method is not performed, normal evacuation is performed until the base pressure is reached. (5) Similarly, the method of (2) to (4) is performed once or repeated plural times (in FIG. 1, twice). At this time, the predetermined time for maintaining the positive pressure state and the predetermined time for evacuation may be a fixed time or may be changed at each repetition. Is). Further, the predetermined degree of vacuum may be a constant degree of vacuum or may be changed to a low value at each repetition (in FIG. 1, the predetermined degree of vacuum at the first repetition is 10 −6 MP
a). In (5), after (4), (2)
If it does not return to normal pressure, perform normal evacuation until the base pressure is reached.
【０００６】以上の真空排気方法によれば、チャンバ内
を一旦、乾燥不活性ガスで陽圧状態にして、この状態を
所定時間保持するため、メンテナンス等で大気圧に開放
された真空チャンバの内壁に吸着した水分の掃引・置換
が促進され、図１に示すように、ベースプレッシャにな
るまで排気時間が、従来のベースプレッシャまでの真空
引きだけの真空排気方法より短縮され、またベースプレ
ッシャの絶対値を低下させることができる。According to the above-described vacuum evacuation method, the inside of the chamber is once brought into a positive pressure state with a dry inert gas, and this state is maintained for a predetermined time. As shown in FIG. 1, the evacuation time until the base pressure is reduced is shorter than that of the conventional evacuation method only for evacuation up to the base pressure, and the absolute pressure of the base pressure is reduced. The value can be reduced.
【０００７】次に、上記の真空排気方法を用いた真空装
置について、図２を参照して説明する。図において、1
は真空チャンバで、真空チャンバ１に、ベースプレッシ
ャまで真空引きをするためのメインバルブ２を有する排
気ライン３と、真空チャンバ１内を陽圧にするためのバ
ルブ４を有するガス供給ライン５と、真空チャンバ１内
の圧力を抜くためのバルブ６を有する圧抜きライン７と
が付設され、排気ライン３にポンプ８が接続されて構成
されている。図示しないが、真空チャンバ１には、ガス
供給ライン５とは別に必要に応じて処理用ガス供給ライ
ンが設けられ、また真空チャンバ１の左右の両側または
片側に開閉扉を介して半導体ウェーハの搬入/搬出用の
予備室が設けられている。また、ガス供給ライン５に
は、図示しないが、乾燥不活性ガスを供給するガス供給
部が接続され、ガス供給部とバルブ４間には、流量計、
圧力調整弁等が介設されている。また、圧抜きライン７
には、図示しないが、工場排気へ接続されている。ま
た、チャンバ１およびチャンバ１に通じて陽圧となる構
成部品は、その陽圧に耐える構造から成っている。Next, a vacuum apparatus using the above-described evacuation method will be described with reference to FIG. In the figure, 1
Is a vacuum chamber, an exhaust line 3 having a main valve 2 for evacuating the vacuum chamber 1 to a base pressure, a gas supply line 5 having a valve 4 for making the inside of the vacuum chamber 1 a positive pressure, A pressure release line 7 having a valve 6 for releasing the pressure in the vacuum chamber 1 is provided, and a pump 8 is connected to the exhaust line 3. Although not shown, a processing gas supply line is provided in the vacuum chamber 1 as needed in addition to the gas supply line 5, and a semiconductor wafer is loaded into the vacuum chamber 1 on both left and right sides or one side via an opening / closing door. / A spare room for carrying out is provided. Although not shown, a gas supply unit for supplying a dry inert gas is connected to the gas supply line 5, and a flow meter,
A pressure regulating valve and the like are provided. In addition, pressure release line 7
Is connected to a factory exhaust (not shown). Further, the chamber 1 and the components that are subjected to a positive pressure through the chamber 1 have a structure that can withstand the positive pressure.
【０００８】以上の構成の真空装置によれば、陽圧の圧
抜きのための圧抜きライン７がチャンバ１に付設されて
おり、排気ライン３に負担を掛けることなく、チャンバ
１内の陽圧を大気圧近辺の陽圧にまで圧抜きすることが
できる。According to the vacuum apparatus having the above structure, the depressurizing line 7 for depressurizing the positive pressure is provided in the chamber 1, so that no load is applied to the exhaust line 3 and the positive pressure in the chamber 1 is reduced. Can be depressurized to a positive pressure near atmospheric pressure.
【０００９】次に、上記構成の真空装置において、真空
チャンバ１をメンテナンス等で大気圧に開放後、高真空
に復帰させるための真空排気方法について説明する。こ
のときのチャンバ１内の圧力特性は、図１に同じであ
る。 （１）先ず、開閉扉、バルブ４およびバルブ６を閉にし
た後、排気ライン３のメインバルブ２を開にして、ポン
プ８により、大気圧から所定真空度として、例えば、１
０−４ＭＰａまで、または所定時間として、例えば、２
０分間、真空引きを行う。 （２）次に、メインバルブ２を閉にした後、ガス供給ラ
イン５のバルブ４を開にして真空チャンバ１内に乾燥不
活性ガスを導入し、チャンバ１内を、例えば、０.１５
ＭＰaの圧力の陽圧状態とし、この状態を、例えば、１
０分間保持する。陽圧の圧力は、チャンバ１およびチャ
ンバ１に通ずる構成部品が陽圧に耐える範囲内で設定す
る。 （３）次に、圧抜きライン７のバルブ６を開にしてチャ
ンバ１内を大気圧近辺の陽圧に圧抜きする。 （４）次に、バルブ６を閉にするとともに、メインバル
ブ２を開にして、大気圧近辺の陽圧から所定真空度とし
て、例えば、１０−５ＭＰａまで、または所定時間とし
て、例えば、２０分間、真空引きを行う。尚、以下の
（５）の方法を行わない場合は、ベースプレッシャにな
るまで通常の真空引きを行う。 （５）同様に、（２）〜（４）の方法を１回または繰り
返して複数回行う（図１では２回）。このとき、陽圧状
態を保持する所定時間および真空引きの所定時間は一定
の時間でも、繰り返しごとに変化させてもよい。また、
所定真空度は、一定の真空度でも、繰り返しごとに低い
値に変化させていってもよい。尚、（５）において、
（４）の後、（２）へ戻らない場合は、ベースプレッシ
ャになるまで通常の真空引きを行う。Next, a description will be given of a vacuum evacuation method for returning the vacuum chamber 1 to a high vacuum after opening the vacuum chamber 1 to the atmospheric pressure for maintenance or the like in the vacuum apparatus having the above-described configuration. The pressure characteristics in the chamber 1 at this time are the same as those in FIG. (1) First, after closing the opening / closing door, the valve 4 and the valve 6, the main valve 2 of the exhaust line 3 is opened, and the pump 8 changes the atmospheric pressure to a predetermined degree of vacuum.
0-4 MPa or as a predetermined time, for example, 2
Vacuum for 0 minutes. (2) Next, after closing the main valve 2, the valve 4 of the gas supply line 5 is opened to introduce a dry inert gas into the vacuum chamber 1.
A positive pressure state of a pressure of MPa is applied.
Hold for 0 minutes. The positive pressure is set within a range where the chamber 1 and the components communicating with the chamber 1 can withstand the positive pressure. (3) Next, the valve 6 of the pressure release line 7 is opened to release the pressure in the chamber 1 to a positive pressure near the atmospheric pressure. (4) Next, the valve 6 is closed and the main valve 2 is opened, and a predetermined vacuum degree from a positive pressure near the atmospheric pressure to, for example, 10 −5 MPa or a predetermined time, for example, 20 Vacuum for minutes. When the following method (5) is not performed, normal evacuation is performed until the base pressure is reached. (5) Similarly, the method of (2) to (4) is performed once or repeated several times (in FIG. 1, twice). At this time, the predetermined time for maintaining the positive pressure state and the predetermined time for evacuation may be a fixed time or may be changed for each repetition. Also,
The predetermined degree of vacuum may be a constant degree of vacuum or may be changed to a lower value for each repetition. In (5),
If the process does not return to (2) after (4), normal evacuation is performed until the base pressure is reached.
【００１０】以上の構成の真空装置を用いて、以上の真
空排気方法で排気した場合、チャンバ１内を一旦、乾燥
不活性ガスで陽圧状態にして、この状態を所定時間保持
するため、メンテナンス等で大気圧に開放された真空チ
ャンバ１の内壁に吸着した水分の掃引・置換が促進さ
れ、ベースプレッシャになるまで排気時間が短縮され、
またベースプレッシャの絶対値を低下させることができ
る。When the vacuum apparatus having the above configuration is used to evacuate by the above-described evacuation method, the inside of the chamber 1 is once brought into a positive pressure state with a dry inert gas, and this state is maintained for a predetermined time. Sweep / replacement of moisture adsorbed on the inner wall of the vacuum chamber 1 opened to the atmospheric pressure is promoted, and the evacuation time is reduced until the base pressure is reached.
Also, the absolute value of the base pressure can be reduced.
【００１１】[0011]
【発明の効果】以上に説明したように、本発明の真空排
気方法および真空装置によれば、チャンバ内を一旦、乾
燥不活性ガスで陽圧状態にして、この状態を所定時間保
持するため、ベースプレッシャになるまでの排気時間を
短縮でき、メンテナンス等で大気圧に開放した後の真空
装置の立ち上げを効率よくでき、製造工程におけるスル
ープットを向上させることができる。As described above, according to the vacuum evacuation method and the vacuum apparatus of the present invention, the inside of the chamber is once brought into a positive pressure state with a dry inert gas, and this state is maintained for a predetermined time. The evacuation time until the base pressure is reduced can be shortened, the vacuum device can be efficiently started after being released to the atmospheric pressure for maintenance or the like, and the throughput in the manufacturing process can be improved.
【図１】 本発明の一実施例の真空排気方法を説明する
ためのチャンバ内の圧力特性を示すグラフ。FIG. 1 is a graph showing pressure characteristics in a chamber for explaining a vacuum evacuation method according to an embodiment of the present invention.
【図２】 本発明の一実施例の真空装置の概略構成図。FIG. 2 is a schematic configuration diagram of a vacuum apparatus according to one embodiment of the present invention.
１ チャンバ ５ ガス供給ライン ７ 圧力抜きライン 1 chamber 5 gas supply line 7 pressure release line
───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.7 識別記号 ＦＩ テーマコート゛(参考） Ｈ０１Ｌ 21/3065 Ｈ０１Ｌ 21/302 Ｂ ──────────────────────────────────────────────────続 き Continued on the front page (51) Int.Cl. 7 Identification symbol FI Theme coat ゛ (Reference) H01L 21/3065 H01L 21/302 B
Claims (3)
ベースプレッシャに到達させるための真空排気方法にお
いて、 ベースプレッシャまでの真空引きの前に、一旦、真空チ
ャンバを乾燥不活性ガスで陽圧の状態に所定時間保持す
ることを特徴とする真空排気方法。In a vacuum evacuation method for releasing a vacuum chamber to atmospheric pressure and then reaching a base pressure again, before vacuuming to a base pressure, the vacuum chamber is once subjected to a positive pressure with a dry inert gas. Vacuum evacuation method, wherein the state is maintained for a predetermined time.
時間までの真空引きを介して、１回以上繰り返すことを
特徴とする請求項１記載の真空排気方法。2. The vacuum evacuation method according to claim 1, wherein the state of the positive pressure is repeated at least once through evacuation until a predetermined degree of vacuum or a predetermined time.
法を用いた真空装置であって、前記乾燥不活性ガス導入
のためのガス供給ラインと、前記陽圧の圧抜きのための
圧抜きラインとをチャンバに付設したことを特徴とする
真空装置。3. A vacuum apparatus using the vacuum evacuation method according to claim 1, wherein a gas supply line for introducing the dry inert gas and a pressure for releasing the positive pressure. A vacuum apparatus characterized in that a drawing line is provided in a chamber.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001050607A JP2002249876A (en) | 2001-02-26 | 2001-02-26 | Evacuating method and vacuum device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001050607A JP2002249876A (en) | 2001-02-26 | 2001-02-26 | Evacuating method and vacuum device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2002249876A true JP2002249876A (en) | 2002-09-06 |
Family
ID=18911539
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2001050607A Pending JP2002249876A (en) | 2001-02-26 | 2001-02-26 | Evacuating method and vacuum device |
Country Status (1)
| Country | Link |
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| JP (1) | JP2002249876A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008305953A (en) * | 2007-06-07 | 2008-12-18 | Tokyo Electron Ltd | Vacuum evacuating method and storage medium |
| KR20160078910A (en) | 2014-12-25 | 2016-07-05 | 도쿄엘렉트론가부시키가이샤 | Vacuum exhausting method and vacuum exhausting apparatus |
| CN106971963A (en) * | 2017-03-17 | 2017-07-21 | 武汉华星光电技术有限公司 | Dry etching board processing procedure chamber and its quick method for taking out base pressure leak rate |
| US9810208B2 (en) | 2013-03-12 | 2017-11-07 | Sumitomo Heavy Industries, Ltd. | Cryopump and method for regenerating the cryopump using two-stage discharge process |
| KR20190039874A (en) * | 2017-10-06 | 2019-04-16 | 도쿄엘렉트론가부시키가이샤 | Method for suppressing particle generation and vacuum apparatus |
-
2001
- 2001-02-26 JP JP2001050607A patent/JP2002249876A/en active Pending
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008305953A (en) * | 2007-06-07 | 2008-12-18 | Tokyo Electron Ltd | Vacuum evacuating method and storage medium |
| US8516715B2 (en) | 2007-06-07 | 2013-08-27 | Tokyo Electron Limited | Evacuation method and storage medium |
| US9810208B2 (en) | 2013-03-12 | 2017-11-07 | Sumitomo Heavy Industries, Ltd. | Cryopump and method for regenerating the cryopump using two-stage discharge process |
| KR20160078910A (en) | 2014-12-25 | 2016-07-05 | 도쿄엘렉트론가부시키가이샤 | Vacuum exhausting method and vacuum exhausting apparatus |
| US9984907B2 (en) | 2014-12-25 | 2018-05-29 | Tokyo Electron Limited | Evacuation method and vacuum processing apparatus |
| KR102364950B1 (en) | 2014-12-25 | 2022-02-17 | 도쿄엘렉트론가부시키가이샤 | Vacuum exhausting method and vacuum exhausting apparatus |
| CN106971963A (en) * | 2017-03-17 | 2017-07-21 | 武汉华星光电技术有限公司 | Dry etching board processing procedure chamber and its quick method for taking out base pressure leak rate |
| CN106971963B (en) * | 2017-03-17 | 2020-02-14 | 武汉华星光电技术有限公司 | Dry etching machine processing cavity and method for rapidly pumping bottom and pressing leakage rate thereof |
| KR20190039874A (en) * | 2017-10-06 | 2019-04-16 | 도쿄엘렉트론가부시키가이샤 | Method for suppressing particle generation and vacuum apparatus |
| KR102289801B1 (en) | 2017-10-06 | 2021-08-12 | 도쿄엘렉트론가부시키가이샤 | Method for suppressing particle generation and vacuum apparatus |
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