CN115446742A - Composite abrasive grinding wheel and preparation method and application thereof - Google Patents
Composite abrasive grinding wheel and preparation method and application thereof Download PDFInfo
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- CN115446742A CN115446742A CN202211117346.0A CN202211117346A CN115446742A CN 115446742 A CN115446742 A CN 115446742A CN 202211117346 A CN202211117346 A CN 202211117346A CN 115446742 A CN115446742 A CN 115446742A
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- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 54
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- 229910052808 lithium carbonate Inorganic materials 0.000 description 7
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 7
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Images
Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
- B24D3/00—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents
- B24D3/02—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents the constituent being used as bonding agent
- B24D3/04—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents the constituent being used as bonding agent and being essentially inorganic
- B24D3/14—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents the constituent being used as bonding agent and being essentially inorganic ceramic, i.e. vitrified bondings
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
- B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/12—Lapping plates for working plane surfaces
- B24B37/14—Lapping plates for working plane surfaces characterised by the composition or properties of the plate materials
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
- B24D18/00—Manufacture of grinding tools or other grinding devices, e.g. wheels, not otherwise provided for
- B24D18/0009—Manufacture of grinding tools or other grinding devices, e.g. wheels, not otherwise provided for using moulds or presses
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- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Inorganic Chemistry (AREA)
- Polishing Bodies And Polishing Tools (AREA)
Abstract
The invention discloses a composite abrasive grinding wheel and a preparation method and application thereof, wherein the preparation method of the composite abrasive grinding wheel comprises the following steps: weighing the hard diamond abrasive, the soft abrasive and the wetting agent according to a proportion, mixing and grinding the materials, sieving the materials by a sieve of 90 to 110 meshes, then adding the ceramic bond and the temporary binder, uniformly mixing the materials, sieving the materials by a sieve of 70 to 80 meshes, and sealing the materials to obtain the molding material of the composite abrasive grinding wheel; carrying out cold press molding on the composite abrasive grinding wheel molding material to obtain a grinding block green body; placing the grinding block green body in a muffle furnace, sintering to 700-800 ℃ according to a heating curve, preserving heat for 1-2h, and cooling to obtain the grinding block of the composite abrasive grinding wheel; carrying out surface deburring, cleaning and finishing treatment on the composite abrasive grinding wheel grinding block, vertically bonding the composite abrasive grinding wheel grinding block in a groove of an aluminum substrate by using epoxy resin glue, arranging the grinding blocks at equal intervals, and curing and forming to obtain a coarse composite abrasive grinding wheel; and (3) performing finish machining on the coarse composite abrasive grinding wheel to ensure that the flatness of the grinding surface of the coarse composite abrasive grinding wheel meets the precision requirement, so as to obtain the composite abrasive grinding wheel.
Description
Technical Field
The invention relates to the technical field of super-hard abrasive tools for the precision grinding of third-generation semiconductors. And more particularly, to a composite abrasive grinding wheel, a method of making the same, and applications thereof.
Background
With the rapid development of new technology industries such as chip manufacturing, integrated circuits, new energy, and the like, the current chip microelectronic manufacturing technology is developing towards the direction of substrate large-size, high-integration, and chip ultra-thinning. The single crystal silicon carbide is taken as the most representative third generation wide bandgap semiconductor material at present, and is widely applied to substrate materials of high-power and high-density integrated electronic devices and optoelectronic devices by virtue of the excellent characteristics of high critical breakdown voltage, high electronic saturation rate, strong radiation resistance, high-temperature stability, high thermal conductivity and the like. The performance of single crystal-based devices depends on the lattice integrity and flatness of the epitaxial layer of the single crystal substrate, which requires the substrate before epitaxial growth to have an ultra-flat, defect-free, and damage-free surface.
At present, the thinning process of the single crystal silicon carbide wafer mainly comprises two processes: the other one is that the friction and wear mode of adopting free abrasive grain grinds silicon carbide wafer and thins, because free abrasive material distributes at the abrasive disc surface random and grinds the orbit inconsistent, can remain the inhomogeneous mill mark that distributes on the wafer surface, produce damage such as micro crack, lattice distortion, dislocation at the subsurface, can appear the wafer plane degree super poor even when serious, size repeatability is relatively poor scheduling problem, simultaneously because grind the attenuate in-process and need use a large amount of diamond abrasive material, resource consumption is big, grind back wafer difficult to realize the accurate positioning, can't realize automaticly. Another kind is then to carry out ultra-precision grinding attenuate with diamond emery wheel to carborundum wafer, and diamond emery wheel has grinding efficiency height, long service life, machining precision advantage such as high, but because the little cutting edge of diamond grit is more, and is comparatively sharp, gets rid of the material through single mechanical action and inevitably can produce damage such as deep scratch, crazing line, dislocation at the sub-surface of wafer, still need just restore the surface defect of ground wafer through follow-up technology, has greatly increased process time, and machining efficiency is low, is difficult to realize batch production.
Therefore, how to improve the processing efficiency and reduce the surface sub-surface damage of the ultra-precision ground wafer has important significance for realizing the high-efficiency processing of the high-precision ultra-smooth surface of the wafer. In related research in the field of ultra-precision machining of hard and brittle materials, researchers have found that it is difficult to obtain a highly precise and ultra-smooth workpiece surface by a single mechanical action alone. From the energy point of view, during the material removing process, at least the processing energy corresponding to the sum of the chemical bond binding energy of the material and the energy barrier depending on the factors such as temperature, pressure, chemical equilibrium degree and reaction speed is needed, so during the removing process of the hard and brittle material, the introduction of various energies is an effective way to improve the processing efficiency, reduce the surface roughness and reduce the surface subsurface damage.
Disclosure of Invention
In view of the above, the present invention provides a composite abrasive grinding wheel, a method of making the same, and applications thereof that overcome or at least partially address the above-mentioned problems.
According to one aspect of the present invention, there is provided a method of manufacturing a composite abrasive grinding wheel, comprising: weighing the diamond hard abrasive, the soft abrasive and the wetting agent according to a proportion, mixing and grinding the materials, sieving the materials by a sieve of 90 to 110 meshes, then adding the ceramic bond and the temporary binder, uniformly mixing the materials, sieving the materials by a sieve of 70 to 80 meshes, and sealing the materials to obtain the composite abrasive grinding wheel molding material; cold press molding is carried out on the composite abrasive grinding wheel molding material to obtain a grinding block green body; placing the grinding block green body in a muffle furnace, sintering to 700-800 ℃ according to a heating curve, preserving heat for 1-2h, and cooling to obtain the grinding block of the composite abrasive grinding wheel; carrying out surface deburring, cleaning and finishing treatment on the composite abrasive grinding wheel grinding block, vertically bonding the composite abrasive grinding wheel grinding block in a groove of an aluminum substrate by using epoxy resin glue, arranging the grinding blocks at equal intervals, and curing and forming to obtain a coarse composite abrasive grinding wheel; and (3) performing finish machining on the coarse composite abrasive grinding wheel to ensure that the flatness of the grinding surface of the coarse composite abrasive grinding wheel meets the precision requirement, so as to obtain the composite abrasive grinding wheel.
Optionally, in the method for preparing the composite abrasive grinding wheel, the time for stuffing is 12-24 h.
Alternatively, in the method for manufacturing a composite abrasive grinding wheel according to the present invention, wherein the cold press molding comprises: slowly pressurizing to 60-100 MPa by a powder tablet press, and releasing pressure after keeping the pressure for 30-60 s.
Alternatively, in the method for manufacturing a composite abrasive grinding wheel according to the present invention, wherein the temperature rise profile includes: heating to 300 ℃ at the heating rate of 2 ℃/min, preserving heat for 1h-2h, and heating to 700 ℃ -800 ℃ at the heating rate of 4 ℃/min-5 ℃/min.
Alternatively, in the method for manufacturing a composite abrasive grinding wheel according to the present invention, wherein the solidification molding includes: curing for 20-48 h at normal temperature under certain load pressure.
Alternatively, in the method for manufacturing a composite abrasive grinding wheel according to the present invention, wherein the aluminum matrix has an outer diameter of 250mm to 270mm and an inner diameter of 200mm to 220mm.
Optionally, in the method for manufacturing the composite abrasive grinding wheel according to the present invention, the diamond hard abrasive is 30 to 45% by mass, the soft abrasive is 30 to 40% by mass, the ceramic bond is 15 to 25% by mass, the temporary binder is 3 to 5% by mass, and the wetting agent is 2 to 5% by mass.
Alternatively, in the method for manufacturing the composite abrasive grinding wheel according to the invention, wherein the soft abrasive is CeO 2 、MgO、Fe 2 O 3 One or a combination of any of them.
Optionally, in the method for manufacturing a composite abrasive grinding wheel according to the present invention, the raw materials of the vitrified bond include, by weight: 40-50 parts of silicon dioxide, 10-15 parts of boric acid, 5-10 parts of aluminum oxide, 5-10 parts of lithium carbonate, 2-3 parts of sodium carbonate, 2-3 parts of potassium carbonate and 10-15 parts of barium carbonate.
Optionally, in the method for manufacturing a composite abrasive grinding wheel according to the present invention, the method for manufacturing a vitrified bond includes: weighing the raw materials in proportion, ball-milling and mixing uniformly, smelting at high temperature, quenching with water, crushing, drying and sieving to obtain the ceramic bond.
Optionally, in the method for manufacturing the composite abrasive grinding wheel according to the invention, the high-temperature smelting temperature is 1200-1400 ℃.
Alternatively, in the method for manufacturing the composite abrasive grinding wheel according to the present invention, wherein the crushing is wet ball milling crushing.
Alternatively, in the method for manufacturing the composite abrasive grinding wheel according to the present invention, wherein the diamond hard abrasive has a particle size of 2000 to 4000 mesh.
Alternatively, in the method for manufacturing the composite abrasive grinding wheel according to the invention, wherein the particle size of the soft abrasive is 2500-3500 mesh.
Alternatively, in the method for manufacturing the composite abrasive grinding wheel according to the present invention, the number of the composite abrasive grinding wheel blocks arranged at equal intervals is 60.
According to still another aspect of the present invention, there is provided a composite abrasive grinding wheel obtained by the above-described manufacturing method.
In accordance with yet another aspect of the present invention, there is provided a method of chemical mechanical grinding of silicon carbide wafer thinning, comprising: cleaning the silicon carbide wafer to be thinned by using auxiliary grinding fluid; and carrying out chemical mechanical grinding on the silicon carbide wafer by using the composite abrasive grinding wheel.
Alternatively, in the method for chemical mechanical grinding of silicon carbide wafer thinning according to the present invention, the auxiliary grinding fluid includes: base fluid, oxidant, lubricant and PH regulator.
Alternatively, in the method of chemical mechanical grinding for thinning a silicon carbide wafer according to the present invention, wherein the base liquid contains Fe 2+ The oxidizing agent comprises hydrogen peroxide.
According to the preparation method of the composite abrasive grinding wheel, the composite abrasive grinding wheel is prepared and generated through diamond hard abrasive, soft abrasive, wetting agent and other raw materials, wherein the hard abrasive can realize rapid thinning of a wafer through mechanical grinding of sharp corners of abrasive particles, the soft abrasive can generate a solid-phase chemical reaction with an oxide layer to generate a soft layer which is easy to remove, and the effect of chemical removal is achieved.
According to the method for chemical mechanical grinding for thinning the silicon carbide wafer, disclosed by the invention, the high-efficiency ultra-precision grinding processing of the silicon carbide wafer is realized by utilizing the combined action of chemical machinery. Specifically, firstly, the surface of the silicon carbide wafer is oxidized to generate a silicon oxide layer through hydroxyl free radicals with strong oxidizing property generated by Fenton reaction in auxiliary grinding fluid, then, the diamond hard grinding material in the composite grinding material grinding wheel realizes physical grinding on the surface of the silicon carbide wafer through a sharp corner, and through self sharpening and abrasion of the grinding wheel, the soft grinding material is released to generate solid-phase chemical reaction with the silicon oxide layer to generate a soft layer which is easier to remove, so that the effect of chemical removal is achieved. The synergistic effect of the compound abrasive grinding wheel and the chemical mechanical grinding can realize the high-efficiency, high-precision and low-damage grinding processing of the silicon carbide wafer, effectively reduce the thickness removal amount of materials for subsequent wafer processing, and improve the overall precision processing efficiency of the silicon carbide wafer. Wherein the surface graded oxidation mechanism of the silicon carbide wafer is as follows (with Fe) 2 O 3 Soft abrasives as examples):
Fe 2+ +H 2 O 2 →Fe 3+ +OH - +*OH (1)
SiC+4*OH+O 2 →SiO 2 +2H 2 O+CO 2 ↑ (2)
4SiO 2 +2Fe 2 O 3 →4FeSiO 3 +O 2 ↑ (3)
the foregoing description is only an overview of the technical solutions of the present invention, and the embodiments of the present invention are described below in order to make the technical means of the present invention more clearly understood and to make the above and other objects, features, and advantages of the present invention more clearly understandable.
Drawings
Various other advantages and benefits will become apparent to those of ordinary skill in the art upon reading the following detailed description of the preferred embodiments. The drawings are only for purposes of illustrating the preferred embodiments and are not to be construed as limiting the invention. Also, like reference numerals are used to refer to like parts throughout the drawings. In the drawings:
FIG. 1 shows a schematic flow diagram of a method 100 for making a composite abrasive grinding wheel according to one embodiment of the present disclosure;
FIG. 2 illustrates an overall block diagram of a composite abrasive grinding wheel according to one embodiment of the present invention;
FIG. 3 shows a microscopic structure of a composite abrasive grinding wheel according to one embodiment of the present invention.
FIG. 4 shows a schematic flow diagram of a method 400 of chemical mechanical grinding of silicon carbide wafer thinning in accordance with one embodiment of the present invention;
FIG. 5 illustrates the surface topography and a stress altered layer of a ground silicon carbide wafer according to one embodiment of the present invention;
fig. 6 illustrates a method of making a silicon carbide wafer thinned chemical mechanical grinding composite abrasive wheel according to one embodiment of the invention.
Detailed Description
Exemplary embodiments of the present disclosure will be described in more detail below with reference to the accompanying drawings. While exemplary embodiments of the present disclosure are shown in the drawings, it should be understood that the present disclosure may be embodied in various forms and should not be limited by the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the disclosure to those skilled in the art.
The invention aims to provide a preparation method of a novel composite abrasive grinding wheel, and further provides a novel method for realizing high-efficiency, high-precision and low-damage grinding processing of a silicon carbide wafer by the synergistic effect of the composite abrasive grinding wheel and chemical mechanical grinding. According to the method, the surface of the silicon carbide wafer is quickly oxidized by regulating and controlling the chemical components of the auxiliary grinding fluid, the grinding characteristic of the composite abrasive grinding wheel in the grinding process is utilized, the diamond hard abrasive realizes the quick thinning of the wafer through the mechanical grinding of sharp corners of abrasive particles, and a solid-phase chemical reaction is generated between the soft abrasive and an oxide layer to generate a soft layer which is easier to remove, so that the effect of chemical removal is achieved, the problems that the existing silicon carbide hard and brittle material is high in processing difficulty, large in surface stress after thinning and thick in a sub-surface damaged layer are solved, and the high-efficiency ultra-precise thinning processing of the ultra-flat and low-damaged surface of the silicon carbide substrate is realized.
FIG. 1 shows a schematic flow diagram of a method 100 for making a composite abrasive grinding wheel according to one embodiment of the invention.
As shown in figure 1, the method aims to prepare the compound abrasive grinding wheel with the thinned silicon carbide wafer, the compound abrasive grinding wheel does not generate defects such as scratches and damages on the surface, the processing efficiency is high, the thickness removal amount of materials processed by subsequent wafers can be effectively reduced, and the overall precision processing efficiency of the silicon carbide wafer is improved. The preparation method can be roughly divided into five steps of molding material preparation, grinding block cold press molding, grinding block pressureless sintering, grinding wheel bonding and grinding wheel finishing, and the five steps are explained in detail as follows:
the method 100 begins at step 102, where in step 102, a molding compound is prepared: weighing the hard diamond abrasive, the soft abrasive and the wetting agent according to the proportion, mixing and grinding the materials, sieving the materials by a sieve with 90 to 110 meshes (4 to 6 times), then adding the ceramic bond and the temporary binder, uniformly mixing the materials, sieving the materials by a sieve with 70 to 80 meshes (4 to 6 times), and sealing the materials to obtain the composite abrasive grinding wheel molding material. Preferably, the material sealing time is 12-24 h.
Wherein, the proportion of the diamond hard abrasive, the soft abrasive, the ceramic bond and the temporary adhesive is as follows by mass percent: 30-45% of diamond hard abrasive, 30-40% of soft abrasive, 15-25% of ceramic bond, 3-5% of temporary binder and 2-5% of wetting agent;
in some embodiments, the diamond hard abrasive has a particle size of 2000 to 4000 mesh and the soft abrasive has a particle size of 2500 to 3500 mesh. The soft abrasive is CeO 2 、MgO、Fe 2 O 3 One or a combination of any of them.
The ceramic bond comprises the following raw materials: silicon dioxide, boric acid, aluminum oxide, lithium carbonate, sodium carbonate, potassium carbonate and barium carbonate. The raw materials are calculated according to the weight portion as follows: 40-50 parts of silicon dioxide, 10-15 parts of boric acid, 5-10 parts of aluminum oxide, 5-10 parts of lithium carbonate, 2-3 parts of sodium carbonate, 2-3 parts of potassium carbonate and 10-15 parts of barium carbonate. Preferably, the preparation method of the ceramic bond comprises the following steps: weighing the raw materials in proportion, ball-milling and mixing uniformly, smelting at high temperature, quenching with water, crushing (specifically adopting wet ball-milling and crushing), drying and sieving to obtain the ceramic bond. Wherein the high-temperature smelting temperature is 1200-1400 ℃.
In some embodiments, the primary active ingredient of the temporary binder includes, but is not limited to, aromatic tetracarboxylic dianhydrides, aromatic diamines, tackifying resins, cyclic olefin copolymers, and the like.
And then, entering step 104, and carrying out cold press molding on the composite abrasive grinding wheel molding material to obtain a grinding block green body.
In some embodiments, the cold press molding comprises the steps of slowly pressurizing to 60MPa-100MPa by a powder tablet press, maintaining the pressure for 30-60s, then releasing the pressure, and naturally drying for 24h.
And then, in step 106, placing the grinding block green body in a muffle furnace, sintering to 700-800 ℃ according to a heating curve, preserving heat for 1-2h, and cooling to obtain the grinding block of the composite abrasive grinding wheel.
In some embodiments, the warming profile specifically comprises the steps of: heating to 300 ℃ at the heating rate of 2 ℃/min, preserving heat for 1h-2h, and heating to 700 ℃ -800 ℃ at the heating rate of 4 ℃/min-5 ℃/min. The operation can ensure the discharge of water in the grinding block green body and the sufficient decomposition of all organic auxiliary agents, and avoid the cracking of the green body. Preferably, after the temperature is raised to 700-800 ℃, the temperature can be kept for 1.5h, and the composite abrasive grinding wheel grinding block is obtained after the temperature is cooled to room temperature along with the furnace.
Then, in step 108, the abrasive brick of the composite abrasive grinding wheel is subjected to surface deburring, cleaning and finishing treatment, the abrasive brick of the composite abrasive grinding wheel is vertically adhered in the groove of the aluminum matrix by using epoxy resin glue, and the abrasive brick of the composite abrasive grinding wheel is arranged at equal intervals and is cured and molded to obtain the coarse composite abrasive grinding wheel. In some embodiments, the curing molding is carried out for 20h-48h at normal temperature under certain load pressure. Wherein, the number of the compound abrasive grinding wheel grinding blocks which are arranged at equal intervals is 60. Preferably, before the epoxy resin glue is used for vertically adhering the composite abrasive grinding wheel abrasive block to the groove of the aluminum matrix, the inner surface of the groove of the aluminum matrix can be degreased to keep the groove of the aluminum matrix clean.
In some embodiments, the aluminum matrix has an outer diameter of 250mm to 270mm and an inner diameter of 200mm to 220mm.
Finally, in step 110, the rough composite abrasive grinding wheel is subjected to fine machining, so that the flatness of the grinding surface of the rough composite abrasive grinding wheel meets the precision requirement, and the composite abrasive grinding wheel is obtained. Referring to fig. 2 and 3, fig. 2 is a view showing an overall structure of a composite abrasive grinding wheel according to an embodiment of the present invention. FIG. 3 shows a microscopic structure of a composite abrasive grinding wheel according to one embodiment of the present invention.
In conclusion, the method for preparing the composite abrasive grinding wheel provided by the invention prepares and generates the composite abrasive grinding wheel through the diamond hard abrasive, the soft abrasive, the wetting agent and other raw materials, wherein the hard abrasive can realize the rapid thinning of the wafer through the mechanical grinding of sharp corners of abrasive particles, and the soft abrasive can generate a solid-phase chemical reaction with an oxide layer to generate a soft layer which is easier to remove, so that the effect of chemical removal is achieved.
Figure 4 shows a schematic flow diagram of a method 400 for chemical mechanical grinding of silicon carbide wafer thinning, in accordance with one embodiment of the present invention.
As shown in fig. 4, the method 400 includes the steps of:
The chemical mechanical grinding method for thinning the silicon carbide wafer realizes efficient ultra-precise grinding processing of the silicon carbide wafer by utilizing the composite action of chemical machinery. Specifically, firstly, the surface of the silicon carbide wafer is oxidized to generate a silicon oxide layer through hydroxyl free radicals with strong oxidizing property generated by Fenton reaction in auxiliary grinding fluid, then, the diamond hard grinding material in the composite grinding material grinding wheel realizes physical grinding on the surface of the silicon carbide wafer through a sharp corner, and through self sharpening and abrasion of the grinding wheel, the soft grinding material is released to generate solid-phase chemical reaction with the silicon oxide layer to generate a soft layer which is easier to remove, so that the effect of chemical removal is achieved. The combined abrasive grinding wheel and the chemical mechanical grinding have the synergistic effect of realizing high-efficiency, high-precision and low-damage grinding processing of the silicon carbide wafer, effectively reducing the thickness removal amount of materials for subsequent wafer processing and improving the overall precision processing efficiency of the silicon carbide wafer. Wherein the surface graded oxidation mechanism of the silicon carbide wafer is as follows (with Fe) 2 O 3 Soft abrasives as examples):
Fe 2+ +H 2 0 2 →Fe 3+ +OH - +*OH (1)
SiC+4*OH+O 2 →SiO 2 +2H 2 O+CO 2 ↑ (2)
4SiO 2 +2Fe 2 O 3 →4FeSiO 3 +O 2 ↑ (3)
the present invention, its method of manufacture and use, is described below in the context of specific examples, which are intended only to provide those skilled in the art with a better understanding of the present invention, and are not intended to limit the invention in any way.
Example 1
A composite abrasive grinding wheel for thinning a silicon carbide wafer comprises the following raw materials in percentage by weight: 35% of diamond hard abrasive, 40% of soft abrasive, 20% of ceramic bond, 3% of temporary binder and 2% of wetting agent.
The grain diameter of the diamond abrasive is 3000 meshes (#), and the soft abrasive is Fe 2 O 3 And the particle diameter is 3000#.
The ceramic bond comprises the following raw materials in percentage by weight: 50% of silicon dioxide, 15% of boric acid, 10% of aluminum oxide, 8% of lithium carbonate, 2% of sodium carbonate, 2% of potassium carbonate and 13% of barium carbonate.
The preparation method of the ceramic bond comprises the following steps: accurately weighing the raw materials according to a formula, ball-milling and uniformly mixing, smelting at 1300 ℃, then quenching with water to obtain a binding agent vitreous body, and then carrying out wet ball-milling crushing, drying and sieving to obtain the ceramic binding agent powder.
Fig. 6 shows a method for manufacturing a silicon carbide wafer thinned chemical mechanical grinding composite abrasive wheel according to an embodiment of the invention, as shown in fig. 6, the method includes the steps of:
(1) Preparing a molding material: placing a hard diamond abrasive and a soft diamond abrasive in a mortar, adding a wetting agent, grinding uniformly, repeatedly screening for 5 times through a 100# sieve, adding ceramic bond powder and a temporary binder into the mixed composite abrasive, mixing uniformly, screening for 5 times through an 80# sieve, and sealing for 24 hours to obtain a composite abrasive grinding wheel molding material;
(2) Cold press molding of the grinding block: placing a certain amount of the composite abrasive grinding wheel molding material in a metal mold, performing cold press molding through a powder tablet press, slowly pressurizing to 100MPa, maintaining the pressure for 60s, then releasing the pressure, obtaining a grinding block green body after demolding, and naturally drying for 24h;
(3) And (3) pressureless sintering of the grinding block: and flatly placing the obtained composite abrasive grinding wheel grinding block green compact on a refractory plate in a muffle furnace for sintering, wherein the temperature rise process curve in the sintering process is as follows: heating to 300 ℃ at the heating rate of 2 ℃/min, and preserving heat for 1-2h to ensure the discharge of water in the grinding block green body and the full decomposition of all organic auxiliary agents, thereby avoiding the cracking of the green body. Heating to a target sintering temperature of 760 ℃ at a heating rate of 5 ℃/min, preserving heat for 1.5 hours, and cooling to room temperature along with a furnace to obtain a composite abrasive grinding wheel grinding block;
(4) Bonding of the grinding wheel: carrying out surface deburring, cleaning and finishing treatment on the sintered composite abrasive grinding wheel grinding block, then carrying out deoiling treatment on the inner surface of the aluminum substrate groove, uniformly coating the prepared epoxy resin adhesive on the to-be-bonded surfaces of the aluminum substrate groove and the grinding block, vertically fixing the composite abrasive grinding wheel grinding block on the aluminum substrate, arranging the grinding block at equal intervals, and curing at normal temperature for 24 hours under certain load pressure for shaping; wherein the outer diameter of the aluminum substrate is 260mm, the inner diameter is 210mm, and the number of used grinding blocks is 60;
(5) Dressing of a grinding wheel: and (3) performing finish machining such as special turning and grinding on the grinding wheel, and obtaining the chemical mechanical grinding composite abrasive grinding wheel with thinned silicon carbide wafer after the planeness of a grinding surface meets the precision requirement.
Example 2
A chemical mechanical grinding composite abrasive grinding wheel for thinning a silicon carbide wafer comprises the following raw materials in percentage by weight: 35% of diamond hard abrasive, 40% of soft abrasive, 20% of ceramic bond, 3% of temporary binder and 2% of wetting agent.
The diamond abrasive has a particle size of 3000#, the soft abrasive is MgO, and the particle size is 3000#.
The ceramic bonding agent comprises, by weight, 50% of silicon dioxide, 15% of boric acid, 10% of aluminum oxide, 8% of lithium carbonate, 2% of sodium carbonate, 2% of potassium carbonate and 13% of barium carbonate.
The preparation method of the ceramic bond comprises the following steps: accurately weighing the raw materials according to a formula, ball-milling and mixing uniformly, performing high-temperature smelting at 1300 ℃, water-quenching to obtain a binding agent vitreous body, and performing wet ball-milling crushing, drying and sieving to obtain ceramic binding agent powder.
The preparation method of the chemical mechanical grinding composite abrasive grinding wheel with the thinned silicon carbide wafer comprises the following steps:
(1) Preparing a molding material: placing a hard diamond abrasive and a soft diamond abrasive in a mortar, adding a wetting agent, grinding uniformly, repeatedly screening for 5 times through a 100# sieve, adding ceramic bond powder and a temporary binder into the mixed composite abrasive, mixing uniformly, screening for 5 times through an 80# sieve, and sealing for 24 hours to obtain a composite abrasive grinding wheel molding material;
(2) Cold press molding of the grinding block: placing a certain amount of the composite abrasive grinding wheel molding material in a metal mold, performing cold press molding by a powder tablet press, slowly pressurizing to 100MPa, maintaining the pressure for 60s, then releasing the pressure, demolding to obtain a grinding block green body, and naturally drying for 24h;
(3) And (3) pressureless sintering of the grinding block: and flatly placing the obtained composite abrasive grinding wheel grinding block green compact on a refractory plate in a muffle furnace for sintering, wherein the temperature rise process curve in the sintering process is as follows: heating to 300 ℃ at the heating rate of 2 ℃/min, and preserving heat for 1-2h to ensure the discharge of water in the grinding block green body and the full decomposition of all organic additives and avoid the cracking of the green body. Heating to a target sintering temperature of 760 ℃ at a heating rate of 5 ℃/min, preserving heat for 1.5h, and cooling to room temperature along with a furnace to obtain a composite abrasive grinding wheel grinding block;
(4) Bonding of the grinding wheel: carrying out surface deburring, cleaning and finishing treatment on the sintered abrasive wheel grinding block with the composite abrasive material, then carrying out deoiling treatment on the inner surface of a groove of an aluminum substrate, uniformly coating the prepared epoxy resin adhesive on the surface to be adhered of the groove and the grinding block of the substrate, vertically fixing the abrasive wheel grinding block with the composite abrasive material on the aluminum substrate, arranging the abrasive wheel grinding block at equal intervals, and curing at normal temperature for 24 hours under certain load pressure for shaping; wherein the outer diameter of the base body is 260mm, the inner diameter is 210mm, and the number of the used grinding blocks is 60;
(5) Dressing of a grinding wheel: and (3) performing finish machining such as special turning and grinding on the grinding wheel, and obtaining the chemical mechanical grinding composite abrasive grinding wheel with thinned silicon carbide wafer after the planeness of a grinding surface meets the precision requirement.
Example 3
A chemical mechanical grinding composite abrasive grinding wheel for thinning a silicon carbide wafer comprises the following raw materials in percentage by weight: 35% of diamond hard abrasive, 40% of soft abrasive, 20% of ceramic bond, 3% of temporary binder and 2% of wetting agent.
The diamond abrasive has a particle size of 3000#, and the soft abrasive is CeO 2 And the particle diameter is 3000#.
The ceramic bonding agent comprises, by weight, 50% of silicon dioxide, 15% of boric acid, 10% of aluminum oxide, 8% of lithium carbonate, 2% of sodium carbonate, 2% of potassium carbonate and 13% of barium carbonate.
The preparation method of the ceramic bond comprises the following steps: accurately weighing the raw materials according to a formula, ball-milling and uniformly mixing, smelting at 1300 ℃, then quenching with water to obtain a binding agent vitreous body, and then carrying out wet ball-milling crushing, drying and sieving to obtain the ceramic binding agent powder.
The preparation method of the chemical mechanical grinding composite abrasive grinding wheel for thinning the silicon carbide wafer comprises the following steps:
(1) Preparing a molding material: placing a hard diamond abrasive and a soft diamond abrasive in a mortar, adding a wetting agent, grinding uniformly, repeatedly screening for 5 times through a 100# sieve, adding ceramic bond powder and a temporary binder into the mixed composite abrasive, mixing uniformly, screening for 5 times through an 80# sieve, and sealing for 24 hours to obtain a composite abrasive grinding wheel molding material;
(2) Cold press molding of the grinding block: placing a certain amount of the composite abrasive grinding wheel molding material in a metal mold, performing cold press molding by a powder tablet press, slowly pressurizing to 100MPa, maintaining the pressure for 30-60s, then releasing the pressure, obtaining a grinding block green body after demolding, and naturally drying for 24h;
(3) Pressureless sintering of the grinding block: and flatly placing the obtained composite abrasive grinding wheel grinding block green compact on a refractory plate in a muffle furnace for sintering, wherein the temperature rise process curve in the sintering process is as follows: heating to 300 ℃ at the heating rate of 2 ℃/min, and preserving heat for 1-2h to ensure the discharge of water in the grinding block green body and the full decomposition of all organic auxiliary agents, thereby avoiding the cracking of the green body. Heating to a target sintering temperature of 760 ℃ at a heating rate of 5 ℃/min, preserving heat for 1.5h, and cooling to room temperature along with a furnace to obtain a composite abrasive grinding wheel grinding block;
(4) Bonding of the grinding wheel: carrying out surface deburring, cleaning and finishing treatment on the sintered composite abrasive grinding wheel grinding block, then carrying out deoiling treatment on the inner surface of a groove of an aluminum substrate, uniformly coating prepared epoxy resin glue on the to-be-adhered surfaces of the groove and the grinding block of the substrate, vertically fixing the composite abrasive grinding wheel grinding block on the aluminum substrate, arranging the grinding block and the substrate at equal intervals, and curing for 24 hours at normal temperature under certain load pressure for shaping; wherein the outer diameter of the base body is 260mm, the inner diameter is 210mm, and the number of the used grinding blocks is 60;
(5) Dressing of a grinding wheel: and (3) performing finish machining such as special turning and grinding on the grinding wheel, and obtaining the chemical mechanical grinding composite abrasive grinding wheel with the thinned silicon carbide wafer after the planeness of a grinding surface meets the precision requirement.
Example 4
A method for chemical mechanical grinding of thinned SiC wafers comprises the following steps:
the silicon carbide wafer to be thinned was cleaned with an auxiliary grinding fluid, and then the compound abrasive grinding wheel obtained in example 1 was subjected to chemical mechanical grinding.
The auxiliary grinding fluid comprises the following components: fe 2+ Base liquid, hydrogen peroxide, lubricant and pH regulator.
The stress-altered layer and surface roughness of the silicon carbide wafer after chemical mechanical grinding are shown in FIG. 5.
In the description of the present specification, the terms "connected", "fixed", and the like are to be construed broadly unless otherwise explicitly specified or limited. Furthermore, the terms "upper", "lower", "inner", "outer", "top", "bottom", and the like indicate orientations or positional relationships that are based on the orientations or positional relationships shown in the drawings, merely to facilitate description of the invention and to simplify the description, and do not indicate or imply that the referenced devices or units must have a particular orientation, be constructed in a particular orientation, and be constructed in a particular manner of operation, and thus, are not to be construed as limiting the invention.
The method A11, as recited in A7, wherein the ceramic bond comprises the following raw materials by weight: 40-50 parts of silicon dioxide, 10-15 parts of boric acid, 5-10 parts of aluminum oxide, 5-10 parts of lithium carbonate, 2-3 parts of sodium carbonate, 2-3 parts of potassium carbonate and 10-15 parts of barium carbonate. The method A12, the method A9, wherein the preparation method of the ceramic bond comprises: weighing the raw materials in proportion, ball-milling and mixing uniformly, smelting at high temperature, quenching with water, crushing, drying and sieving to obtain the ceramic bond. A13, the method as A10, wherein the temperature of the high-temperature smelting is 1200-1400 ℃. The method of A14, A10, wherein the crushing is wet ball milling. The method A15, A1, wherein the particle size of the diamond hard abrasive is 2000-4000 meshes. The method A16, the method A1, wherein the particle size of the soft abrasive is 2500-3500 meshes. A17, the preparation method according to A1, wherein the number of the compound abrasive grinding wheel grinding blocks which are arranged at equal intervals is 60. The method A18, as recited in A17, wherein the auxiliary grinding fluid comprises: base fluid, oxidant, lubricant and PH regulator. A19, the method according to A17, wherein the base fluid contains Fe 2+ And the oxidizing agent contains hydrogen peroxide.
In the description herein, the description of the terms "one embodiment," "some embodiments," "specific embodiments," etc., means that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the invention. In this specification, the schematic representations of the terms used above do not necessarily refer to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples.
In the description provided herein, numerous specific details are set forth. However, it is understood that embodiments of the invention may be practiced without these specific details. In some instances, well-known methods, structures and techniques have not been shown in detail in order not to obscure an understanding of this description.
Similarly, it should be appreciated that in the foregoing description of exemplary embodiments of the invention, various features of the invention are sometimes grouped together in a single embodiment, figure, or description thereof for the purpose of streamlining the disclosure and aiding in the understanding of one or more of the various inventive aspects. However, the disclosed method should not be interpreted as reflecting an intention that: that the invention as claimed requires more features than are expressly recited in each claim. Thus, the claims following the detailed description are hereby expressly incorporated into this detailed description, with each claim standing on its own as a separate embodiment of this invention.
Furthermore, those skilled in the art will appreciate that while some embodiments described herein include some features included in other embodiments, rather than other features, combinations of features of different embodiments are meant to be within the scope of the invention and form different embodiments.
While the invention has been described with respect to a limited number of embodiments, those skilled in the art, having benefit of this description, will appreciate that other embodiments can be devised which do not depart from the scope of the invention as disclosed herein. Moreover, it should be noted that the language used in the specification has been principally selected for readability and instructional purposes, and may not have been selected to delineate or circumscribe the inventive subject matter. Accordingly, many modifications and variations will be apparent to those of ordinary skill in the art without departing from the scope and spirit of the appended claims. The present invention has been disclosed in an illustrative rather than a restrictive sense with respect to the scope of the invention, as defined in the appended claims.
Claims (10)
1. A method for preparing a composite abrasive grinding wheel comprises the following steps:
weighing the hard diamond abrasive, the soft abrasive and the wetting agent according to a proportion, mixing and grinding the materials, sieving the materials by a sieve of 90 to 110 meshes, then adding the ceramic bond and the temporary binder, uniformly mixing the materials, sieving the materials by a sieve of 70 to 80 meshes, and sealing the materials to obtain the molding material of the composite abrasive grinding wheel;
carrying out cold press molding on the composite abrasive grinding wheel molding material to obtain a grinding block green body;
placing the grinding block green body in a muffle furnace, sintering to 700-800 ℃ according to a heating curve, preserving heat for 1-2h, and cooling to obtain the grinding block of the composite abrasive grinding wheel;
carrying out surface deburring, cleaning and finishing treatment on the composite abrasive grinding wheel grinding block, vertically bonding the composite abrasive grinding wheel grinding block in a groove of an aluminum substrate by using epoxy resin glue, arranging the grinding blocks at equal intervals, and curing and forming to obtain a coarse composite abrasive grinding wheel;
and performing finish machining on the coarse composite abrasive grinding wheel to ensure that the flatness of a grinding surface of the coarse composite abrasive grinding wheel meets the precision requirement, so as to obtain the composite abrasive grinding wheel.
2. The method of claim 1, wherein the stuffy material time is 12-24 h.
3. The method of claim 1, wherein said cold press forming comprises:
slowly pressurizing to 60-100 MPa by a powder tablet press, and releasing pressure after maintaining the pressure for 30-60 s.
4. The method of claim 1, wherein the temperature ramp profile comprises:
heating to 300 ℃ at the heating rate of 2 ℃/min, preserving heat for 1h-2h, and heating to 700 ℃ -800 ℃ at the heating rate of 4 ℃/min-5 ℃/min.
5. The method of claim 1, wherein the curing profile comprises:
curing at normal temperature for 20-48 h under a certain load pressure.
6. The method of claim 1 wherein the aluminum substrate has an outer diameter of 250mm to 270mm and an inner diameter of 200mm to 220mm.
7. The method according to claim 1, wherein the diamond hard abrasive is 30-45% by mass, the soft abrasive is 30-40% by mass, the ceramic bond is 15-25% by mass, the temporary binder is 3-5% by mass, and the wetting agent is 2-5% by mass.
8. The method of claim 1, wherein the soft abrasive is CeO 2 、MgO、Fe 2 O 3 Or a combination of any of them.
9. A composite abrasive grinding wheel produced by the production method according to any one of claims 1 to 8.
10. A method of chemical mechanical grinding of silicon carbide wafer thinning comprising:
cleaning the silicon carbide wafer to be thinned by using auxiliary grinding fluid;
chemical mechanical grinding of the silicon carbide wafer using the composite abrasive wheel of claim 9.
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Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101780662A (en) * | 2010-03-17 | 2010-07-21 | 大连理工大学 | Soft abrasive grinding wheel of ultra-precision and low-damage ground silicon wafer |
| CN102152247A (en) * | 2011-01-20 | 2011-08-17 | 大连理工大学 | Grinding tool for chemically and mechanically grinding aluminium oxide (Al2O3) ceramics and preparation method of grinding tool |
| CN102699826A (en) * | 2012-06-16 | 2012-10-03 | 大连理工大学 | Soft grinding material sand wheel with bonding agent solidified at normal temperature |
| CN105817976A (en) * | 2016-03-23 | 2016-08-03 | 大连理工大学 | Efficient ultraprecise grinding method for nanometer depth damaged layer |
| CN106625296A (en) * | 2016-11-29 | 2017-05-10 | 磐维科技（青岛）有限公司 | Diamond grinding wheel |
| CN106891272A (en) * | 2017-02-23 | 2017-06-27 | 东北大学 | A kind of vitrified bond high-performance CBN emery wheels based on strong electromagnetic and preparation method thereof |
| CN110303437A (en) * | 2019-06-17 | 2019-10-08 | 郑州磨料磨具磨削研究所有限公司 | A kind of glass-cutting resin wheel and preparation method thereof |
| EP3670628A1 (en) * | 2018-12-20 | 2020-06-24 | J. E. Purkyne University in Usti nad Labem | Abrasive mixture for grinding wheels and method of its production |
| CN111347354A (en) * | 2020-04-14 | 2020-06-30 | 郑州磨料磨具磨削研究所有限公司 | Grinding wheel for thinning silicon carbide crystal, preparation method and application thereof |
| CN113997213A (en) * | 2020-10-16 | 2022-02-01 | 安泰科技股份有限公司 | Ceramic diamond grinding wheel for thinning SiC wafer and manufacturing method thereof |
-
2022
- 2022-09-14 CN CN202211117346.0A patent/CN115446742A/en active Pending
Patent Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101780662A (en) * | 2010-03-17 | 2010-07-21 | 大连理工大学 | Soft abrasive grinding wheel of ultra-precision and low-damage ground silicon wafer |
| CN102152247A (en) * | 2011-01-20 | 2011-08-17 | 大连理工大学 | Grinding tool for chemically and mechanically grinding aluminium oxide (Al2O3) ceramics and preparation method of grinding tool |
| CN102699826A (en) * | 2012-06-16 | 2012-10-03 | 大连理工大学 | Soft grinding material sand wheel with bonding agent solidified at normal temperature |
| CN105817976A (en) * | 2016-03-23 | 2016-08-03 | 大连理工大学 | Efficient ultraprecise grinding method for nanometer depth damaged layer |
| CN106625296A (en) * | 2016-11-29 | 2017-05-10 | 磐维科技（青岛）有限公司 | Diamond grinding wheel |
| CN106891272A (en) * | 2017-02-23 | 2017-06-27 | 东北大学 | A kind of vitrified bond high-performance CBN emery wheels based on strong electromagnetic and preparation method thereof |
| EP3670628A1 (en) * | 2018-12-20 | 2020-06-24 | J. E. Purkyne University in Usti nad Labem | Abrasive mixture for grinding wheels and method of its production |
| CN110303437A (en) * | 2019-06-17 | 2019-10-08 | 郑州磨料磨具磨削研究所有限公司 | A kind of glass-cutting resin wheel and preparation method thereof |
| CN111347354A (en) * | 2020-04-14 | 2020-06-30 | 郑州磨料磨具磨削研究所有限公司 | Grinding wheel for thinning silicon carbide crystal, preparation method and application thereof |
| CN113997213A (en) * | 2020-10-16 | 2022-02-01 | 安泰科技股份有限公司 | Ceramic diamond grinding wheel for thinning SiC wafer and manufacturing method thereof |
Non-Patent Citations (1)
| Title |
|---|
| 金钊;李锦胜;康仁科;张继友;王永刚;孟晓辉;: "应用软磨料磨削的单晶硅超精密制造技术", 光电工程, no. 12, 15 December 2011 (2011-12-15), pages 76 - 84 * |
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