CN1154421A - 脉冲化直流电源的电弧控制和开关元件的保护 - Google Patents
脉冲化直流电源的电弧控制和开关元件的保护 Download PDFInfo
- Publication number
- CN1154421A CN1154421A CN96122845A CN96122845A CN1154421A CN 1154421 A CN1154421 A CN 1154421A CN 96122845 A CN96122845 A CN 96122845A CN 96122845 A CN96122845 A CN 96122845A CN 1154421 A CN1154421 A CN 1154421A
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Links
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- 230000002441 reversible effect Effects 0.000 claims abstract description 22
- 238000004544 sputter deposition Methods 0.000 claims abstract description 22
- 238000007747 plating Methods 0.000 claims description 34
- 238000005507 spraying Methods 0.000 claims description 30
- 238000005516 engineering process Methods 0.000 claims description 18
- 238000010891 electric arc Methods 0.000 claims description 16
- 239000007789 gas Substances 0.000 claims description 16
- 239000013077 target material Substances 0.000 claims description 15
- 239000000758 substrate Substances 0.000 claims description 13
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- 229910052786 argon Inorganic materials 0.000 description 9
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 8
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Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3444—Associated circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Physical Vapour Deposition (AREA)
- Plasma Technology (AREA)
- Thin Magnetic Films (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Abstract
Description
Claims (9)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US545916 | 1995-10-20 | ||
US08/545,916 US5584974A (en) | 1995-10-20 | 1995-10-20 | Arc control and switching element protection for pulsed dc cathode sputtering power supply |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1154421A true CN1154421A (zh) | 1997-07-16 |
CN1152978C CN1152978C (zh) | 2004-06-09 |
Family
ID=24178053
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB961228458A Expired - Lifetime CN1152978C (zh) | 1995-10-20 | 1996-10-17 | 脉冲化直流电源的电弧控制和开关元件的保护 |
Country Status (7)
Country | Link |
---|---|
US (1) | US5584974A (zh) |
JP (1) | JP4733796B2 (zh) |
CN (1) | CN1152978C (zh) |
DE (1) | DE19623654A1 (zh) |
GB (1) | GB2306511B (zh) |
SG (1) | SG43367A1 (zh) |
TW (1) | TW329016B (zh) |
Cited By (8)
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CN100445921C (zh) * | 2004-01-26 | 2008-12-24 | 欧洲航天局 | 太阳能电池阵列的电弧猝熄装置 |
CN101587813B (zh) * | 2008-05-21 | 2011-06-22 | 东京毅力科创株式会社 | 载置台机构、等离子体处理装置和电压施加方法 |
CN102124539A (zh) * | 2008-06-17 | 2011-07-13 | 施耐德电气美国股份有限公司 | 圆片级电弧检测装置和方法 |
CN102956426A (zh) * | 2011-08-22 | 2013-03-06 | 北京中科信电子装备有限公司 | 一种引出抑制浪涌保护装置 |
CN103548226A (zh) * | 2011-02-28 | 2014-01-29 | Sma太阳能技术股份公司 | 用于检测电路中电弧故障的方法和系统 |
CN105958815A (zh) * | 2015-03-09 | 2016-09-21 | 欧姆龙汽车电子株式会社 | 电压转换装置 |
CN106119792A (zh) * | 2015-04-27 | 2016-11-16 | 先进能源工业公司 | 速率增强的脉冲dc溅射系统 |
CN110007181A (zh) * | 2017-12-14 | 2019-07-12 | 塔莱斯公司 | 对于电气设备中的故障的监控 |
Families Citing this family (68)
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WO1996031899A1 (en) | 1995-04-07 | 1996-10-10 | Advanced Energy Industries, Inc. | Adjustable energy quantum thin film plasma processing system |
JP2904263B2 (ja) * | 1995-12-04 | 1999-06-14 | 日本電気株式会社 | スパッタ装置 |
DE19651615C1 (de) * | 1996-12-12 | 1997-07-10 | Fraunhofer Ges Forschung | Verfahren zum Aufbringen von Kohlenstoffschichten durch reaktives Magnetron-Sputtern |
DE19702187C2 (de) | 1997-01-23 | 2002-06-27 | Fraunhofer Ges Forschung | Verfahren und Einrichtung zum Betreiben von Magnetronentladungen |
EP0989202B1 (en) * | 1997-02-20 | 2011-04-20 | Shibaura Mechatronics Corporation | Power supply device for sputtering and sputtering device using the same |
US6416638B1 (en) | 1997-02-20 | 2002-07-09 | Shibaura Mechatronics Corporation | Power supply unit for sputtering device |
US5993613A (en) * | 1997-11-07 | 1999-11-30 | Sierra Applied Sciences, Inc. | Method and apparatus for periodic polarity reversal during an active state |
WO1999027151A1 (en) * | 1997-11-24 | 1999-06-03 | Cvc, Inc. | Pulsed mode deposition for low rate film deposition |
US5976327A (en) | 1997-12-12 | 1999-11-02 | Applied Materials, Inc. | Step coverage and overhang improvement by pedestal bias voltage modulation |
DE19826297A1 (de) * | 1998-06-12 | 1999-12-16 | Aurion Anlagentechnik Gmbh | Vorrichtung und Verfahren zur Vermeidung von Überschlägen bei Sputterprozessen durch eine aktive Arcunterdrückung |
US6287977B1 (en) | 1998-07-31 | 2001-09-11 | Applied Materials, Inc. | Method and apparatus for forming improved metal interconnects |
DE19848636C2 (de) | 1998-10-22 | 2001-07-26 | Fraunhofer Ges Forschung | Verfahren zur Überwachung einer Wechselspannungs-Entladung an einer Doppelelektrode |
KR100302457B1 (ko) | 1999-04-06 | 2001-10-29 | 박호군 | 다이아몬드 막 증착방법 |
US6290821B1 (en) | 1999-07-15 | 2001-09-18 | Seagate Technology Llc | Sputter deposition utilizing pulsed cathode and substrate bias power |
DE19937859C2 (de) * | 1999-08-13 | 2003-06-18 | Huettinger Elektronik Gmbh | Elektrische Versorgungseinheit für Plasmaanlagen |
US6344419B1 (en) | 1999-12-03 | 2002-02-05 | Applied Materials, Inc. | Pulsed-mode RF bias for sidewall coverage improvement |
US6554979B2 (en) | 2000-06-05 | 2003-04-29 | Applied Materials, Inc. | Method and apparatus for bias deposition in a modulating electric field |
DE10034895C2 (de) * | 2000-07-18 | 2002-11-14 | Fraunhofer Ges Forschung | Verfahren zur Erkennung von Überschlägen in gepulst betriebenen Plasmen |
US6524455B1 (en) * | 2000-10-04 | 2003-02-25 | Eni Technology, Inc. | Sputtering apparatus using passive arc control system and method |
CA2426901A1 (en) * | 2000-11-13 | 2002-05-16 | Eaton Corporation | Detection of arcing in dc electrical systems |
US6577484B1 (en) * | 2000-12-12 | 2003-06-10 | Pass & Seymour, Inc. | Arc fault detector device utilizing the di/dt and 60 Hz components of an arcing waveform |
EP1434336A4 (en) | 2001-09-28 | 2008-10-08 | Shibaura Mechatronics Corp | POWER SUPPLY FOR SPUTTER |
US6746591B2 (en) | 2001-10-16 | 2004-06-08 | Applied Materials Inc. | ECP gap fill by modulating the voltate on the seed layer to increase copper concentration inside feature |
US20040027749A1 (en) * | 2001-11-09 | 2004-02-12 | Zuercher Joseph C. | Detection of arcing in dc electrical systems |
US7378356B2 (en) * | 2002-03-16 | 2008-05-27 | Springworks, Llc | Biased pulse DC reactive sputtering of oxide films |
US7247221B2 (en) * | 2002-05-17 | 2007-07-24 | Applied Films Corporation | System and apparatus for control of sputter deposition process |
US20040112735A1 (en) * | 2002-12-17 | 2004-06-17 | Applied Materials, Inc. | Pulsed magnetron for sputter deposition |
US6876205B2 (en) * | 2003-06-06 | 2005-04-05 | Advanced Energy Industries, Inc. | Stored energy arc detection and arc reduction circuit |
DE10336881B4 (de) * | 2003-08-11 | 2008-05-15 | Hüttinger Elektronik GmbH & Co. KG | Hochfrequenzanregungsanordnung mit einer Begrenzungsschaltung |
US6967305B2 (en) * | 2003-08-18 | 2005-11-22 | Mks Instruments, Inc. | Control of plasma transitions in sputter processing systems |
US6995545B2 (en) * | 2003-08-18 | 2006-02-07 | Mks Instruments, Inc. | Control system for a sputtering system |
DE10341717A1 (de) * | 2003-09-10 | 2005-05-25 | Applied Films Gmbh & Co. Kg | Anordnung für n Verbraucher elektrischer Energie, von denen m Verbraucher gleichzeitig mit Energie versorgt werden |
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JP2006120234A (ja) * | 2004-10-21 | 2006-05-11 | Hitachi Global Storage Technologies Netherlands Bv | 垂直磁気記録媒体の製造方法 |
US7372610B2 (en) | 2005-02-23 | 2008-05-13 | Sage Electrochromics, Inc. | Electrochromic devices and methods |
US7749564B2 (en) * | 2005-03-31 | 2010-07-06 | Caterpillar Inc. | Method and apparatus for the production of thin film coatings |
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EP1720195B1 (de) * | 2005-05-06 | 2012-12-12 | HÜTTINGER Elektronik GmbH + Co. KG | Arcunterdrückungsanordnung |
US20060283702A1 (en) * | 2005-06-21 | 2006-12-21 | Applied Materials, Inc. | Random pulsed DC power supply |
EP1798626A1 (fr) * | 2005-12-13 | 2007-06-20 | Stmicroelectronics Sa | Circuit de régulation de tension, notamment pour pompe de charge |
US7514935B2 (en) * | 2006-09-13 | 2009-04-07 | Advanced Energy Industries, Inc. | System and method for managing power supplied to a plasma chamber |
DE102006043900B4 (de) * | 2006-09-19 | 2008-09-18 | Siemens Ag | Vorrichtung und Verfahren zum Betrieb einer Plasmaanlage |
DE102006043898A1 (de) * | 2006-09-19 | 2008-04-17 | Siemens Ag | Vorrichtung und Verfahren zum Betrieb einer Plasmaanlage |
EP2076916B1 (en) * | 2006-10-26 | 2014-12-10 | IHI Hauzer Techno Coating B.V. | Dual magnetron sputtering power supply and magnetron sputtering apparatus |
DE102006057529B4 (de) * | 2006-12-06 | 2012-04-12 | Hüttinger Elektronik Gmbh + Co. Kg | Kontrollvorrichtung, Energieversorgungssystem und Verfahren |
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US8217299B2 (en) * | 2007-02-22 | 2012-07-10 | Advanced Energy Industries, Inc. | Arc recovery without over-voltage for plasma chamber power supplies using a shunt switch |
EP1995818A1 (en) * | 2007-05-12 | 2008-11-26 | Huettinger Electronic Sp. z o. o | Circuit and method for reducing electrical energy stored in a lead inductance for fast extinction of plasma arcs |
JP4931013B2 (ja) * | 2007-12-06 | 2012-05-16 | 株式会社神戸製鋼所 | パルススパッタ装置およびパルススパッタ方法 |
US8044594B2 (en) * | 2008-07-31 | 2011-10-25 | Advanced Energy Industries, Inc. | Power supply ignition system and method |
US8395078B2 (en) | 2008-12-05 | 2013-03-12 | Advanced Energy Industries, Inc | Arc recovery with over-voltage protection for plasma-chamber power supplies |
PL2790205T3 (pl) | 2009-02-17 | 2018-10-31 | Solvix Gmbh | Urządzenie zasilające do obróbki plazmowej |
JP5339965B2 (ja) * | 2009-03-02 | 2013-11-13 | 株式会社アルバック | スパッタリング装置用の交流電源 |
DE102010038603B4 (de) * | 2010-07-29 | 2016-06-02 | Trumpf Huettinger Sp. Z O. O. | DC-Plasmaanordnung |
US8552665B2 (en) | 2010-08-20 | 2013-10-08 | Advanced Energy Industries, Inc. | Proactive arc management of a plasma load |
DE202010014176U1 (de) * | 2010-10-11 | 2012-01-16 | Tigres Dr. Gerstenberg Gmbh | Vorrichtung zum Behandeln von Oberflächen mit Entladungsüberwachung |
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US9697992B2 (en) * | 2013-02-22 | 2017-07-04 | General Electric Company | System and apparatus for arc elimination |
WO2015035373A1 (en) * | 2013-09-09 | 2015-03-12 | Itn Energy Systems, Inc. | Modulation of reverse voltage limited wa veforms in sputtering deposition chambers |
US10211631B2 (en) * | 2013-12-17 | 2019-02-19 | Enphase Energy, Inc. | Voltage clipping |
CN104529179B (zh) * | 2014-10-31 | 2017-02-01 | 天津南玻节能玻璃有限公司 | 抑制三银玻璃放电的装置 |
JP6588697B2 (ja) * | 2014-11-28 | 2019-10-09 | 株式会社デンソー | スタータ用電磁スイッチ |
US20180040461A1 (en) * | 2016-08-02 | 2018-02-08 | Advanced Energy Industries, Inc. | Application of diode box to reduce crazing in glass coatings |
DE102016122221A1 (de) * | 2016-11-18 | 2018-05-24 | VON ARDENNE Asset GmbH & Co. KG | Verfahren und Sputteranordnung |
CN112187032B (zh) * | 2019-07-04 | 2022-03-15 | 台达电子工业股份有限公司 | 电源供应装置及其操作方法 |
JP2023061727A (ja) * | 2021-10-20 | 2023-05-02 | 東京エレクトロン株式会社 | プラズマ処理装置 |
US20230130106A1 (en) * | 2021-10-27 | 2023-04-27 | Applied Materials, Inc. | Methods and apparatus for processing a substrate |
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-
1995
- 1995-10-20 US US08/545,916 patent/US5584974A/en not_active Expired - Lifetime
-
1996
- 1996-05-15 TW TW085105726A patent/TW329016B/zh not_active IP Right Cessation
- 1996-05-20 SG SG1996009840A patent/SG43367A1/en unknown
- 1996-05-31 GB GB9611416A patent/GB2306511B/en not_active Expired - Fee Related
- 1996-06-13 DE DE19623654A patent/DE19623654A1/de not_active Ceased
- 1996-07-01 JP JP18998196A patent/JP4733796B2/ja not_active Expired - Fee Related
- 1996-10-17 CN CNB961228458A patent/CN1152978C/zh not_active Expired - Lifetime
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CN101908459B (zh) * | 2008-05-21 | 2012-07-04 | 东京毅力科创株式会社 | 载置台机构和等离子体处理装置 |
CN102124539A (zh) * | 2008-06-17 | 2011-07-13 | 施耐德电气美国股份有限公司 | 圆片级电弧检测装置和方法 |
CN103548226A (zh) * | 2011-02-28 | 2014-01-29 | Sma太阳能技术股份公司 | 用于检测电路中电弧故障的方法和系统 |
CN103548226B (zh) * | 2011-02-28 | 2015-12-02 | Sma太阳能技术股份公司 | 用于检测电路中电弧故障的方法和系统 |
CN102956426A (zh) * | 2011-08-22 | 2013-03-06 | 北京中科信电子装备有限公司 | 一种引出抑制浪涌保护装置 |
CN105958815A (zh) * | 2015-03-09 | 2016-09-21 | 欧姆龙汽车电子株式会社 | 电压转换装置 |
CN106119792A (zh) * | 2015-04-27 | 2016-11-16 | 先进能源工业公司 | 速率增强的脉冲dc溅射系统 |
CN106119792B (zh) * | 2015-04-27 | 2021-07-13 | 先进工程解决方案全球控股私人有限公司 | 速率增强的脉冲dc溅射系统 |
CN110007181A (zh) * | 2017-12-14 | 2019-07-12 | 塔莱斯公司 | 对于电气设备中的故障的监控 |
CN110007181B (zh) * | 2017-12-14 | 2021-09-21 | 塔莱斯公司 | 对于电气设备中的故障的监控 |
Also Published As
Publication number | Publication date |
---|---|
DE19623654A1 (de) | 1997-04-24 |
GB2306511A (en) | 1997-05-07 |
JP4733796B2 (ja) | 2011-07-27 |
GB9611416D0 (en) | 1996-08-07 |
TW329016B (en) | 1998-04-01 |
CN1152978C (zh) | 2004-06-09 |
US5584974A (en) | 1996-12-17 |
JPH09137271A (ja) | 1997-05-27 |
GB2306511B (en) | 1999-06-09 |
SG43367A1 (en) | 1997-10-17 |
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