CN115433921A - 一种自由控制衬底温度的衬底托盘 - Google Patents

一种自由控制衬底温度的衬底托盘 Download PDF

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CN115433921A
CN115433921A CN202110615226.2A CN202110615226A CN115433921A CN 115433921 A CN115433921 A CN 115433921A CN 202110615226 A CN202110615226 A CN 202110615226A CN 115433921 A CN115433921 A CN 115433921A
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temperature
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刘胜
甘志银
杨柏
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Guangdong Zhongyuan Semiconductor Technology Co ltd
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/26—Deposition of carbon only
    • C23C16/27—Diamond only
    • C23C16/274—Diamond only using microwave discharges
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/26—Deposition of carbon only
    • C23C16/27—Diamond only
    • C23C16/279—Diamond only control of diamond crystallography
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4581—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber characterised by material of construction or surface finish of the means for supporting the substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/511—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using microwave discharges

Abstract

本发明公开了一种MPCVD系统中自由控制衬底温度衬底托盘。在MPCVD系统中进行金刚石的生长时，由于腔体内等离子体的不均匀造成了温度场的不均匀，而这也是无法获取大面积金刚石的最主要原因。本发明通过将衬底托材料置换为空气层或其他不同于衬底托的导热材料，将均匀导热的衬底托改为非均匀导热，通过导热率来逆向补偿腔体内的温度分布，以此来适应腔体内温度的不均匀性，达到衬底温度的均匀，并以此来应对无法获取大尺寸金刚石的问题。

Description

一种自由控制衬底温度的衬底托盘
技术领域
本发明涉及化学气相沉积技术领域，特别是涉及一种MPCVD系统中自由控制衬底温度的衬底托盘。
背景技术
金刚石被称作终极半导体。而通过MPCVD设备进行金刚石生长是目前为止得到最纯净且效率最高的途径。其工作原理为圆柱形腔体与微波共振产生中心强电场来电离腔体内的氢气，使其变为等离子体后通入甲烷并将其电离为含碳基团在金刚石衬底进行沉积进行金刚石生长。由于腔体本身的特征，激发后的等离子体球中等离子体的密度分布极度不均匀，同样带来了衬底温度分布的不均匀，大面积生长时，衬底托表面的温度分布如图1所示，在图1中可以看出，衬底托中心和边缘20 mm的距离内温度差达到了160 K。在这种温度梯度下，金刚石是无法进行均匀生长的。因此，需要找到获取增强衬底温度均匀性的方法，由于设备的本质带来了温度的不均匀，要想实现在不均匀的温度场下获取均匀的温度，可以通过对衬底托导热率的设计实现通过导热率对温度场进行补偿，以此来获取更均匀的温度。
发明内容
针对现有技术问题，本发明提供了一种MPCVD系统中自由控制衬底温度的衬底托盘的设计，所述技术方案是：一种MPCVD系统中自由控制衬底温度的衬底托盘，主要由衬底托（1）、调节层（2）和基片台（3）组成，通过衬底托（1）与基片台（3）间产生的调节层（2）调整整体衬底托盘的热导率，通过热导率与等离子体（4）在衬底托（1）表面的温度分布产生逆向趋势来补偿腔体内温度场的不均匀性。
进一步地，前述调节层（2）是通过除去衬底托（1）底部的材料，使其与基片台（3）间产生空气层来实现对衬底托导热率的控制，或者通过添加其他不同导热系数的材料来实现对衬底托（1）导热率的控制。
进一步地，前述调节层（2）的形态根据衬底拖（1）形态和温度分布需要设置，如环状、蜂窝状、方孔状，以实现对衬底托（1）导热率的自由控制。
本发明的优点是通过将衬底托材料置换为空气层或其他不同于衬底托的导热材料，将均匀导热的衬底托改为非均匀导热，通过导热率来逆向补偿腔体内的温度分布，以此来适应腔体内温度的不均匀性，达到衬底温度的均匀，并以此来应对无法获取大尺寸金刚石的问题。
附图说明
图1为正常状态下衬底托表面温度分布。
图2为本发明结构示意图。
图3为将本发明置于MPCVD腔体内的整体结构示意图。
图4为通过调节层的设计后衬底托表面的温度分布。
图5为控制衬底托调节层得到生长后金刚石凸形(a)和凹形(b)形貌。
具体实施方式
参照图2-3，一种MPCVD系统中自由控制衬底温度的衬底托盘，主要由衬底托1、调节层2和基片台3组成。其中根据MPCVD腔体5内衬底托1表面温度场的获取，结合对腔体内温度场的仿真，通过整体衬底托导热率的逆向补偿，实现衬底温度的均匀性。图4为通过调节层的设计后，获取的相同尺寸衬底托表面的温度分布，从图中可以看出，使用了新的衬底托后，衬底托表面的温度梯度由160 K降至50 K。同时，为了进一步说明含调节层衬底托对衬底表面温度的可控性，设计了两组温度分布分别为中心高边缘低和边缘高中心低的衬底托，并进行了金刚石生长，生长结果如图5所示。其中，中心高边缘低的温度分布生长后金刚石表面形貌呈现凸形，边缘高中心低的温度分布生长后金刚石表面形貌呈现凹形，说明本发明可以实现对金刚石表面形貌的自由控制。
进一步地，前述调节层2是通过除去衬底托1底部的材料，使其与基片台3间产生空气层来实现对衬底托导热率的控制，或者通过添加其他不同导热系数的材料来实现对衬底托1导热率的控制。
进一步地，前述调节层2的形态根据衬底拖1形态和温度分布需要设置，如环状、蜂窝状、方孔状，以实现对衬底托1导热率的自由控制。
以上说明对本发明而言只是说明性的，而非限制性的，本领域普通技术人员的理解，在不脱离权利要求所限定的精神和范围的情况下，可根据上述揭示内容做出变更、修饰或等效，但都将落入本发明的保护范围内。

Claims (3)

1.一种自由控制衬底温度的衬底托盘，主要由衬底托（1）、调节层（2）和基片台（3）组成，其特征在于通过衬底托（1）与基片台（3）间产生的调节层（2）调整整体衬底托盘的热导率，通过热导率与等离子体（4）在衬底托（1）表面的温度分布产生逆向趋势来补偿腔体内温度场的不均匀性。
2.根据权利要求1所述的自由控制衬底温度的衬底托盘，其特征在于调节层（2）通过除去衬底托（1）底部的材料，使其与基片台（3）间产生空气层来实现对衬底托导热率的控制，或者通过添加其他不同导热系数的材料来实现对衬底托（1）导热率的控制。
3.根据权利要求1所述的自由控制衬底温度的衬底托盘，其特征在于调节层（2）的形态根据衬底拖（1）形态和温度分布需要设置，如环状、蜂窝状、方孔状，以实现对衬底托（1）导热率的自由控制。
CN202110615226.2A 2021-06-03 2021-06-03 一种自由控制衬底温度的衬底托盘 Pending CN115433921A (zh)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN117089926A (zh) * 2023-10-20 2023-11-21 杭州海乾半导体有限公司 一种用于提高碳化硅外延片均匀性的载具及其使用方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105870044A (zh) * 2016-04-01 2016-08-17 东莞市中镓半导体科技有限公司 一种自调导热使温度分布均匀化的mocvd大尺寸石墨托盘
CN105887048A (zh) * 2016-04-25 2016-08-24 东莞市中镓半导体科技有限公司 一种自调导热使温度均匀化的mocvd大尺寸不等厚度石墨托盘
CN212560429U (zh) * 2020-06-30 2021-02-19 四川三三零半导体有限公司 一种用于mpcvd的气体抽空结构

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105870044A (zh) * 2016-04-01 2016-08-17 东莞市中镓半导体科技有限公司 一种自调导热使温度分布均匀化的mocvd大尺寸石墨托盘
CN105887048A (zh) * 2016-04-25 2016-08-24 东莞市中镓半导体科技有限公司 一种自调导热使温度均匀化的mocvd大尺寸不等厚度石墨托盘
CN212560429U (zh) * 2020-06-30 2021-02-19 四川三三零半导体有限公司 一种用于mpcvd的气体抽空结构

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN117089926A (zh) * 2023-10-20 2023-11-21 杭州海乾半导体有限公司 一种用于提高碳化硅外延片均匀性的载具及其使用方法
CN117089926B (zh) * 2023-10-20 2024-01-16 杭州海乾半导体有限公司 一种用于提高碳化硅外延片均匀性的载具及其使用方法

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