CN115407567A - 驱动基板和显示面板 - Google Patents

驱动基板和显示面板 Download PDF

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CN115407567A
CN115407567A CN202211055405.6A CN202211055405A CN115407567A CN 115407567 A CN115407567 A CN 115407567A CN 202211055405 A CN202211055405 A CN 202211055405A CN 115407567 A CN115407567 A CN 115407567A
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common electrode
voltage signal
storage capacitor
shielding
driving substrate
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CN115407567B (zh
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连政勤
严允晟
李利霞
谢忠憬
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TCL Huaxing Photoelectric Technology Co Ltd
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TCL Huaxing Photoelectric Technology Co Ltd
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Priority to US18/079,250 priority patent/US11789299B1/en
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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
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    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
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    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
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    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1255—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs integrated with passive devices, e.g. auxiliary capacitors
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Abstract

本申请涉及一种驱动基板和显示面板。该驱动基板包括多个驱动单元；各驱动单元包括第一金属层；第一金属层包括遮蔽公共电极和存储电容公共电极；遮蔽公共电极的遮光部向存储电容公共电极延伸，以使遮蔽公共电极与存储电容公共电极围成像素容纳区域；遮蔽公共电极的遮光部与存储电容公共电极之间存在间隙。从而可分别向遮蔽公共电极和存储电容公共电极传输信号，可向遮蔽公共电极和存储电容公共电极传输相同的信号，也可以传输不同的信号，以实现独立控制遮蔽公共电极和存储电容公共电极上的信号。

Description

驱动基板和显示面板
技术领域
本申请涉及显示技术领域，特别是涉及一种驱动基板和显示面板。
背景技术
在生产制造液晶面板的过程中，为了减少成本会采用4道掩膜工艺制作TFT(ThinFilm Transistor，薄膜晶体管)基板。而在4道掩膜工艺中，TFT基板的第二金属层下方均存在半导体层，第二金属层上的数据线与第一金属层上的公共电极之间会形成MIS(metal-insulator-semiconductor，金属－绝缘体－半导体)电容(如图1所示)。在传统技术中，第一金属层上包括的遮蔽公共电极和存储电容公共电极是连为一体的，使得不能对遮蔽公共电极和存储电容公共电极上的信号进行独立控制。如图2和图3所示，当第二金属层上的数据线在正负极性切换时，半导体层中的载流子重新分布，使得电荷位置不同，因此第二金属层上的数据线与第一金属层上的公共电极之间的有效间距不同，导致第二金属层的数据线在正负极性切换时，MIS电容不对称，从而导致液晶面板出现水平线串扰现象。
发明内容
基于此，有必要针对传统液晶面板中不能对遮蔽公共电极和存储电容公共电极的信号进行独立控制的问题，提供一种驱动基板和显示面板。
为了实现上述目的，一方面，本申请实施例提供了一种驱动基板，包括多个驱动单元；各驱动单元包括第一金属层；第一金属层包括遮蔽公共电极和存储电容公共电极；
遮蔽公共电极的遮光部向存储电容公共电极延伸，以使遮蔽公共电极与存储电容公共电极围成像素容纳区域；遮蔽公共电极的遮光部与存储电容公共电极之间存在间隙。
在其中一个实施例中，存储电容公共电极传输第一电压信号；第一电压信号大于驱动基板的数据电压信号。
在其中一个实施例中，遮蔽公共电极传输第二电压信号；第二电压信号小于临界电压信号；临界电压信号为使驱动基板发生漏光的最小值。
在其中一个实施例中，第二电压信号小于第一电压信号。
在其中一个实施例中，第一电压信号大于等于20V；第二电压信号大于等于6V，且小于14V。
在其中一个实施例中，遮蔽公共电极的遮光部与存储电容公共电极之间的间隙大于等于5微米，且小于等于15微米。
在其中一个实施例中，驱动基板还包括第一信号源；
第一信号源连接存储电容公共电极，向存储电容公共电极传输第一电压信号。
在其中一个实施例中，驱动基板还包括第二信号源；
第二信号源连接遮蔽公共电极，向遮蔽公共电极传输第二电压信号；第二电压信号小于第一电压信号。
在其中一个实施例中，驱动单元还包括与第一金属层异层设置的第二金属层；
第二金属层包括数据线、漏极层以及源极层；第一金属层还包括栅极扫描线；
源极层连接数据线，且源极层对应栅极扫描线设置；漏极层连接源极层，且漏极层对应存储电容公共电极设置。
另一方面，本申请实施例提供了一种显示面板，包括控制主板、显示层以及如上述的驱动基板；
控制主板连接驱动基板；驱动基板驱动显示层中的液晶分子偏转。
上述技术方案中的一个技术方案具有如下优点和有益效果：
本申请各实施例提供的驱动基板包括多个驱动单元。驱动单元包括第一金属层。在第一金属层包括遮蔽公共电极和存储电容公共电极。其中，遮蔽公共电极上包含遮光部，遮蔽公共电极的遮光部向存储电容公共电极延伸，以使遮蔽公共电极与存储电容公共电极围成像素容纳区域，而且遮蔽公共电极的遮光部与存储电容公共电极之间存在间隙，使得遮蔽公共电极和存储电容公共电极不相连接。从而可分别向遮蔽公共电极和存储电容公共电极传输信号，可向遮蔽公共电极和存储电容公共电极传输相同的信号，也可以传输不同的信号，以实现独立控制遮蔽公共电极和存储电容公共电极上的信号。
附图说明
图1为现有技术中的MIS电容的结构示意图。
图2为现有技术中的MIS电容在正极性下的载流子分布图。
图3为现有技术中的MIS电容在负极性下的载流子分布图。
图4为本申请实施提供的驱动基板的第一金属层的一种结构示意图。
图5为本申请实施提供的驱动基板的第一金属层的另一种结构示意图。
图6为本申请实施提供的驱动基板的第二金属层的结构示意图。
图7为本申请实施提供的驱动基板的结构示意图。
具体实施方式
为了便于理解本申请，下面将参照相关附图对本申请进行更全面的描述。附图中给出了本申请的首选实施例。但是，本申请可以以许多不同的形式来实现，并不限于本文所描述的实施例。相反地，提供这些实施例的目的是使对本申请的公开内容更加透彻全面。
需要说明的是，当一个元件被认为是“连接”另一个元件，它可以是直接连接到另一个元件并与之结合为一体，或者可能同时存在居中元件。本文所使用的术语“安装”、“一端”、“另一端”以及类似的表述只是为了说明的目的。
除非另有定义，本文所使用的所有的技术和科学术语与属于本申请的技术领域的技术人员通常理解的含义相同。本文中在本申请的说明书中所使用的术语只是为了描述具体的实施例的目的，不是旨在于限制本申请。本文所使用的术语“及/或”包括一个或多个相关的所列项目的任意的和所有的组合。
一般液晶显示面板包控制主板、反光层、背光源、下偏光片、驱动基板、液晶层、彩色滤光片、上偏光片等结构。其中，控制主板用于对整个液晶显示面板进行控制，例如，主控主板连接驱动基板，为驱动基板提供各类信号，以控制驱动基板。反光层用于反射背光源发出的光线，提高液晶显示面板的发射率。在一个示例中，反光层可由白油、白胶、铜、铝和银中的任意一种材料制成。背光源为液晶显示面板提供光线，在一个示例中，背光源可为冷阴极荧光灯或发光二极管。下偏光片和上偏光片让背光源发出的自然光线成为偏振光。液晶层在电场的作用下改变液晶的排列方向，从而改变光线通过情况，具体的，液晶层受驱动基板驱动。彩色滤光片用于选择通过的小范围波段光波，包括蓝色滤光片、红色滤光片、绿色滤光片等。
当时，在传统技术中，第一金属层上包括的遮蔽公共电极和存储电容公共电极是连为一体的，不便于对遮蔽公共电极和存储电容公共电极上的信号进行控制。为了解决该问题的问题，如图4至图6所示，本申请提供了一种驱动基板。驱动基板由多个驱动单元1，驱动单元1按照竖列和横列排列成，同一横列的驱动单元1相互连接。各驱动单元1给对应的液晶显示面板的像素阳极供电，以驱动对应的像素发光。驱动单元1的数量根据液晶显示面板的分辨率以及液晶显示面板的面积进行确认，在此不做具体限定。
如图4和图5所示，驱动单元1内包括第一金属层100。需要说明的是，第一金属层100和第二金属层200是根据制备工序的先后进行划分。第一金属层100在制备工序上先于第二金属层200。第一金属层100为导电材料制成，例如，导电材料可为铜、钼或铝等。第一金属层100可采用以下任意一种方法制成：化学气相沉积法(Chemical Vapor Deposition，CVD)、物理气相沉积法(Physical Vapor Deposition，PVD)、原子层沉积法(atomic layerdeposition，ALD)、低压化学气相沉积法(Low Pressure Chemical Vapor Deposition，LPCVD)、激光烧蚀沉积法(Laser ablation deposition，LAD)和选择外延生长法(Selective epitaxial growth，SEG)。
如图4所示，第一金属层100包括遮蔽公共电极11和存储电容公共电极13。需要说明的是，遮蔽公共电极11用于屏蔽电场，避免像素中的液晶遭受外界其它电场干扰而产生的显示问题。存储电容公共电极13用于存储电荷。如图5所示，第一金属层100还包括栅极扫描线17，栅极扫描线17连接驱动单元1的驱动电路，向驱动电路传输扫描信号。第一金属层100包括遮蔽公共电极11和存储电容公共电极13，是指在制备第一金属层100之后，对第一金属层100图形化处理，得到遮蔽公共电极11和存储电容公共电极13。
其中，遮蔽公共电极11包括主干部111和遮光部113。主干部111连接信号源，传输信号源输出的电压信号。遮光部113设置在像素的两侧，以防止像素向两侧漏光。具体的，遮蔽公共电极11的遮光部113向存储电容公共电极13延伸。在一个示例中，遮光部113的数量为两个，遮光部113为长条状。遮光部113的一端连接主干部111，另一端朝向存储电容公共电极13设置，即遮光部113横置在主干部111和存储电容公共电极13之间，且两个遮光部113间隔一定距离设置，该距离根据像素的尺寸来设定。由于遮光部113朝向存储电容公共电极13延伸，遮蔽公共电极11与存储电容公共电极13围成像素容纳区域。像素容纳区域用于放置像素，即遮蔽公共电极11和存储电容公共电极13围设在像素的四周，在一个示例中，遮蔽公共电极11的主干部111和遮光部113，以及存储电容公共电极13设在像素的四周。
为了遮蔽公共电极11和存储电容公共电极13隔开。遮蔽公共电极11的遮光部113与存储电容公共电极13之间存在间隙15。需要说明的是，间隙15不能过小，避免因生产工艺的问题，导致遮光部113与存储电容公共电极13粘连在一起。间隙15也不能过大，避免因间隙15过大导致发生漏光现象。在一个示例中，遮蔽公共电极11的遮光部113与存储电容公共电极13之间的间隙15大于等于5微米，且小于等于15微米。例如，遮蔽公共电极11的遮光部113与存储电容公共电极13之间的间隙15为6微米，遮蔽公共电极11的遮光部113与存储电容公共电极13之间的间隙15为7微米，遮蔽公共电极11的遮光部113与存储电容公共电极13之间的间隙15为8微米，需要说明的是，间隙15的具体值为示例作用，对其并不做具体限制，只要满足上述的间隙15条件即可。
本申请各实施例提供的驱动基板包括多个驱动单元。驱动单元包括第一金属层。在第一金属层包括遮蔽公共电极和存储电容公共电极。其中，遮蔽公共电极上包含遮光部，遮蔽公共电极的遮光部向存储电容公共电极延伸，以使遮蔽公共电极与存储电容公共电极围成像素容纳区域，而且遮蔽公共电极的遮光部与存储电容公共电极之间存在间隙，使得遮蔽公共电极和存储电容公共电极不相连接。从而可分别向遮蔽公共电极和存储电容公共电极传输信号，可向遮蔽公共电极和存储电容公共电极传输相同的信号，也可以传输不同的信号，以实现独立控制遮蔽公共电极和存储电容公共电极上的信号。
另外，为保证液晶显示面板正常显示，驱动基板是至关重要的部件。传统技术中为了降低液晶显示面板的生产制造成本，采用4mask(掩膜)工艺制作驱动基板，4mask工艺中驱动基板的第二金属层200制备在半导体层400之上的，使得第二金属层200上的数据线与驱动基板的第一金属层100上的公共电极形成电容，该电容之间夹有半导体层400以及栅极绝缘层300。如图2和图3所示，当第二金属层200上的数据线在正负极性切换时，半导体层400中的载流子(如图2或图3中的e)重新分布，使得电荷位置不同，因此第二金属层200上的数据线与第一金属层100上的公共电极之间的有效间距不同，导致第二金属层200的数据线在正负极性切换时，MIS电容不对称，从而导致液晶面板出现水平线串扰现象。
为了解决液晶显示面板出现水平线串扰现象的问题，在遮蔽公共电极11和存储电容公共电极13被隔开的基础上，单独向存储电容公共电极13输入第一电压信号，来消除液晶显示面板的水平线串扰现象。即向存储电容公共电极13传输第一电压信号。需要说明的是，第一电压信号需要消除因驱动基板的数据线21的正负极性变化，而引起电容不对称问题。为此第一电压信号大于驱动基板的数据电压信号(数据电压信号为数据线21上传输的信号)。需要说明的是，第一电压信号大于数据电压信号的正极性的最大值，以保证即使数据电压信号正负极性变化，第一电压信号始终大于数据电压信号，第二金属层200上的数据线21与驱动基板的第一金属层100上的公共电极形成电容的电场方向由第一电压信号决定，由于第一电压信号保持不变，使得电容的电场方向保持不变。在一个示例中，第一电压信号大于等于20V。例如，第一电压信号为22V，第一电压信号为24V，第一电压信号为26V，需要说明的是，第一电压信号的具体值为示例作用，对其并不做具体限制，只要满足上述的第一电压信号条件即可。
在一个示例中，如图4至图6所示，提供一种驱动基板。驱动基板可划分为多个驱动单元1。驱动基板由多个驱动单元1，驱动单元1按照竖列和横列排列成，在一个示例中，同一横列的驱动单元1相互连接，在另一个示例中，同一竖列的驱动单元1相互连接。
如图4和图5所示，驱动单元1包括第一金属层100。需要说明的是，第一金属层100和第二金属层200是根据制备工序的先后进行划分。第一金属层100在制备工序上先于第二金属层200。第一金属层100为导电材料制成，例如，导电材料可为铜、钼、铝、银、金、或以上任意一种材料的合金，或者任意材料组合的合金等。
第一金属层100包括遮蔽公共电极11和存储电容公共电极13。需要说明的是，遮蔽公共电极11用于屏蔽电场，避免像素中的液晶遭受外界其它电场干扰而产生的显示问题。存储电容公共电极13用于存储电荷。第一金属层100还包括有栅极扫描线17，栅极扫描线17连接驱动单元1的驱动电路，向驱动电路传输扫描信号。
其中，遮蔽公共电极11包括主干部111和遮光部113。主干部111连接信号源，传输信号源输出的电压信号。在一个示例中，主干部111长条状，各驱动单元1的遮蔽公共电极11的主干部111相互连接。遮光部113设置在像素的两侧，以防止像素向两侧漏光。具体的，遮蔽公共电极11的遮光部113向存储电容公共电极13延伸。在一个示例中，遮光部113的数量为两个，遮光部113为长条状。遮光部113的一端连接主干部111，另一端朝向存储电容公共电极13设置，即遮光部113横置在遮蔽公共电极11和存储电容公共电极13之间，且两个遮光部113间隔一定距离设置，该距离根据像素的尺寸来设定。
由于遮光部113向存储电容公共电极13延伸，遮蔽公共电极11与存储电容公共电极13围成像素容纳区域。在一个示例中，像素容纳区域为矩形区域。像素容纳区域用于放置像素，即遮蔽公共电极11和存储电容公共电极13围设在像素的四周，在一个示例中，遮蔽公共电极11的主干部111和遮光部113，以及存储电容公共电极13设在像素的四周。
为了遮蔽公共电极11和存储电容公共电极13隔开，以单独向存储电容公共电极13输入第一电压信号，来消除液晶显示面板的水平线串扰现象。遮蔽公共电极11的遮光部113与存储电容公共电极13之间存在间隙15。需要说明的是，间隙15不能过小，避免因生产工艺的问题，导致遮光部113与存储电容公共电极13粘连在一起。间隙15也不能过大，避免因间隙15过大导致发生漏光现象。在一个示例中，遮蔽公共电极11的遮光部113与存储电容公共电极13之间的间隙15大于等于5微米，且小于等于15微米。例如，遮蔽公共电极11的遮光部113与存储电容公共电极13之间的间隙15为9微米，遮蔽公共电极11的遮光部113与存储电容公共电极13之间的间隙15为10微米，遮蔽公共电极11的遮光部113与存储电容公共电极13之间的间隙15为11微米，需要说明的是，间隙15的具体值为示例作用，对其并不做具体限制，只要满足上述的间隙15条件即可。
需要说明的是，第一电压信号需要消除因驱动基板的数据线21的正负极性变化，而引起电容不对称问题。为此第一电压信号大于驱动基板的数据电压信号(数据电压信号为数据线21上传输的信号)。需要说明的是，第一电压信号大于数据电压信号的正极性的最大值，以保证即使数据电压信号正负极性变化，第一电压信号始终大于数据电压信号，第二金属层200上的数据线21与驱动基板的第一金属层100上的公共电极形成电容的电场方向由第一电压信号决定，由于第一电压信号保持不变，使得电容的电场方向保持不变。在一个示例中，第一电压信号大于等于20V。例如，第一电压信号为21V，第一电压信号为23V，第一电压信号为25V，需要说明的是，第一电压信号的具体值为示例作用，对其并不做具体限制，只要满足上述的第一电压信号条件即可。
对遮蔽公共电极11而言，遮蔽公共电极11传输的第二电压信号不能过大，第二电压信号过大会使得遮蔽公共电极11的遮光部113对像素中的液晶排序造成影响，而出现漏光现象。为此，第二电压信号小于临界电压信号。需要说明的是，临界电压信号为使驱动基板发生漏光的最小值，第二电压信号等于或大于临界电压信号为像素即发生漏光现象。在一个示例中，由于遮蔽公共电极11和存储电容公共电极13相互隔离，不接触。可分别向遮蔽公共电极11和存储电容公共电极13输入不同的电压信号，分别输入不同的电压信号时，第二电压信号小于第一电压信号。保证遮蔽公共电极11相对而言传输低电压，用于避免漏光。存储电容公共电极13相对而言传输高电压，用于消除水平性串扰现象。在另一个示例中，临界电压信号为14V。第二电压信号大于等于6V，且小于14V。例如，第二电压信号为7V、第二电压信号为8V、第二电压信号为9V、第二电压信号为10V、第二电压信号为11V、第二电压信号为12V、第二电压信号为13V。需要说明的是，第二电压信号的具体值为示例作用，对其并不做具体限制，只要满足上述的第二电压信号条件即可。
为了方便对本申请中的存储电容公共电极13传输信号。在一个示例中，提供一种驱动基板包括第一信号源和多个驱动单元1。各驱动单元1包括第一金属层100。第一金属层100包括遮蔽公共电极11和存储电容公共电极13。遮蔽公共电极11的遮光部113向存储电容公共电极13延伸，以使遮蔽公共电极11与存储电容公共电极13围成像素容纳区域；遮蔽公共电极11的遮光部113与存储电容公共电极13之间存在间隙15。
第一信号源连接存储电容公共电极13，向存储电容公共电极13传输第一电压信号。第一电压信号大于驱动基板的第二金属层200上数据线21中传输的数据电压信号。需要说明的是，第一信号源为电压源。第一信号源可为直接设置在驱动基板上，也可是不直接设置在驱动板上，例如，也是液晶显示面板的主控板上的器件。
为了方便对本申请中的遮蔽公共电极11和存储电容公共电极13传输信号。在一个示例中，提供一种驱动基板包括第一信号源、第二信号源和多个驱动单元1。各驱动单元1包括第一金属层100。第一金属层100包括遮蔽公共电极11和存储电容公共电极13。遮蔽公共电极11的遮光部113向存储电容公共电极13延伸，以使遮蔽公共电极11与存储电容公共电极13围成像素容纳区域；遮蔽公共电极11的遮光部113与存储电容公共电极13之间存在间隙15。
第一信号源连接存储电容公共电极13，向存储电容公共电极13传输第一电压信号。第一电压信号大于驱动基板的数据电压信号。需要说明的是，第一信号源为电压源。第一信号源可为直接设置在驱动基板上，也可是不直接设置在驱动板上，例如，也是液晶显示面板的主控板上的器件。
第二信号源连接遮蔽公共电极11，向遮蔽公共电极11传输第二电压信号。需要说明的是，第二信号源为电压源。第二信号源可为直接设置在驱动基板上，也可是不直接设置在驱动板上，例如，也是液晶显示面板的主控板上的器件。
除此之外，驱动单元1还包括与第一金属层100异层设置的第二金属层200(如图6所示)。异层设置是指：在形成第一金属层100之后，在第一金属层100之上依次形成栅极绝缘层300、半导体层400，再在半导体层400上设置第二金属层200，如图7所示，提供第一金属层100与第二金属层200的异层设置的结构图。由于异层设置，第一金属层100上的公共电极与第二金属层200的数据线21形成MIS电容。该示例中，第二金属层200包括数据线21、漏极层25以及源极层23。第一金属层100还包括栅极扫描线17。其中，源极层23连接数据线21，且源极层23对应栅极扫描线17设置。源极层23对应栅极扫描线17设置是指；源极层23的正投影落在栅极扫描线17上。漏极层25连接源极层23，且漏极层25对应存储电容公共电极13设置。漏极层25对应存储电容公共电极13设置是指：漏极层25的正投影落在存储电容公共电极13。需要说明的是，漏极层25包括凸块，源极层23包括凹槽，凸块设于凹槽围成空间内。漏极层25和源极层23组成TFT的一部分。
本申请驱动基板的各实施例中。驱动单元1包括第一金属层100。在第一金属层100包括遮光部113，遮蔽公共电极11的遮光部113向存储电容公共电极13延伸，以使遮蔽公共电极11与存储电容公共电极13围成像素容纳区域，而且遮蔽公共电极11的遮光部113与存储电容公共电极13之间存在间隙15，使得遮蔽公共电极11和存储电容公共电极13不相连接。向存储电容公共电极13输入第一电压信号，该第一电压信号大于驱动基板的数据电压信号。由于第一电压信号大于数据电压信号，在数据电压信号发生正负极性切换时，不会改变驱动基板中的MIS电容的电场方向，不会因数据电压信号发生正负极性切换而使MIS电容中的载流子重新分布，使得MIS电容对称，消除传统显示面板的水平线串扰现象。
在一个实施例中，提供了一种显示面板，包括控制主板、显示层以及如上述的驱动基板。控制主板连接驱动基板；驱动基板驱动显示层中的液晶分子偏转。
需要说明的是，本实施例中的驱动基板与本申请驱动基板的各实施例所说的驱动基板相同，详细情况请参照本申请驱动基板各实施例，此处不再赘述。
以上所述实施例的各技术特征可以进行任意的组合，为使描述简洁，未对上述实施例中的各个技术特征所有可能的组合都进行描述，然而，只要这些技术特征的组合不存在矛盾，都应当认为是本说明书记载的范围。
以上所述实施例仅表达了本申请的几种实施方式，其描述较为具体和详细，但并不能因此而理解为对申请专利范围的限制。应当指出的是，对于本领域的普通技术人员来说，在不脱离本申请构思的前提下，还可以做出若干变形和改进，这些都属于本申请的保护范围。因此，本申请专利的保护范围应以所附权利要求为准。

Claims (10)

1.一种驱动基板，其特征在于，包括多个驱动单元；各所述驱动单元包括第一金属层；所述第一金属层包括遮蔽公共电极和存储电容公共电极；
所述遮蔽公共电极的遮光部向所述存储电容公共电极延伸，以使所述遮蔽公共电极与所述存储电容公共电极围成像素容纳区域；所述遮蔽公共电极的遮光部与所述存储电容公共电极之间存在间隙。
2.根据权利要求1所述的驱动基板，其特征在于，所述存储电容公共电极传输第一电压信号；所述第一电压信号大于所述驱动基板的数据电压信号。
3.根据权利要求2所述的驱动基板，其特征在于，所述遮蔽公共电极传输第二电压信号；所述第二电压信号小于临界电压信号；所述临界电压信号为使所述驱动基板发生漏光的最小值。
4.根据权利要求3所述的驱动基板，其特征在于，所述第二电压信号小于所述第一电压信号。
5.根据权利要求3所述的驱动基板，其特征在于，所述第一电压信号大于等于20V；所述第二电压信号大于等于6V，且小于14V。
6.根据权利要求1所述的驱动基板，其特征在于，所述遮蔽公共电极的遮光部与所述存储电容公共电极之间的间隙大于等于5微米，且小于等于15微米。
7.根据权利要求2所述的驱动基板，其特征在于，所述驱动基板还包括第一信号源；
所述第一信号源连接所述存储电容公共电极，向所述存储电容公共电极传输所述第一电压信号。
8.根据权利要求7所述的驱动基板，其特征在于，所述驱动基板还包括第二信号源；
所述第二信号源连接所述遮蔽公共电极，向所述遮蔽公共电极传输第二电压信号；所述第二电压信号小于所述第一电压信号。
9.根据权利要求1至8任意一项所述的驱动基板，其特征在于，所述驱动单元还包括与所述第一金属层异层设置的第二金属层；
所述第二金属层包括数据线、漏极层以及源极层；所述第一金属层还包括栅极扫描线；
所述源极层连接所述数据线，且所述源极层对应所述栅极扫描线设置；所述漏极层连接所述源极层，且所述漏极层对应所述存储电容公共电极设置。
10.一种显示面板，其特征在于，包括控制主板、液晶层以及如权利要求1至9任意一项所述的驱动基板；
所述控制主板连接所述驱动基板；所述驱动基板驱动所述液晶层中的液晶分子偏转。
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