CN115360186B - CHIP LED packaging structure and processing technology - Google Patents
CHIP LED packaging structure and processing technology Download PDFInfo
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- CN115360186B CN115360186B CN202211017826.XA CN202211017826A CN115360186B CN 115360186 B CN115360186 B CN 115360186B CN 202211017826 A CN202211017826 A CN 202211017826A CN 115360186 B CN115360186 B CN 115360186B
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- 238000004806 packaging method and process Methods 0.000 title claims abstract description 26
- 239000002184 metal Substances 0.000 claims abstract description 168
- 229910052751 metal Inorganic materials 0.000 claims abstract description 168
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 128
- 229910052802 copper Inorganic materials 0.000 claims abstract description 114
- 239000010949 copper Substances 0.000 claims abstract description 114
- 239000011324 bead Substances 0.000 claims abstract description 58
- 230000000149 penetrating effect Effects 0.000 claims abstract description 9
- 239000007787 solid Substances 0.000 claims description 20
- 238000000034 method Methods 0.000 claims description 18
- 238000005520 cutting process Methods 0.000 claims description 16
- 238000004080 punching Methods 0.000 claims description 12
- 239000000463 material Substances 0.000 claims description 11
- 230000003647 oxidation Effects 0.000 claims description 10
- 238000007254 oxidation reaction Methods 0.000 claims description 10
- 239000000853 adhesive Substances 0.000 claims description 5
- 230000001070 adhesive effect Effects 0.000 claims description 5
- 239000003292 glue Substances 0.000 claims description 4
- 238000005498 polishing Methods 0.000 claims description 3
- 230000000694 effects Effects 0.000 abstract description 6
- 239000003984 copper intrauterine device Substances 0.000 description 18
- 238000003466 welding Methods 0.000 description 15
- 238000009434 installation Methods 0.000 description 11
- 239000012212 insulator Substances 0.000 description 7
- 238000005538 encapsulation Methods 0.000 description 6
- 239000012466 permeate Substances 0.000 description 5
- 238000009713 electroplating Methods 0.000 description 4
- 238000005429 filling process Methods 0.000 description 4
- 238000004073 vulcanization Methods 0.000 description 4
- 239000002699 waste material Substances 0.000 description 2
- 230000032683 aging Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000011010 flushing procedure Methods 0.000 description 1
- 238000012536 packaging technology Methods 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 238000005096 rolling process Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
- H01L25/167—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Led Device Packages (AREA)
Abstract
The application relates to the field of LEDs, in particular to a CHIP LED packaging structure and a processing technology, wherein the CHIP LED packaging structure comprises a first metal layer, a rectangular insulating layer and a second metal layer which are sequentially stacked, the first metal layer comprises a plurality of first metal bonding pads arranged on one side of the insulating layer, the second metal layer comprises a plurality of second metal bonding pads arranged on one side, far away from the first metal bonding pads, of the insulating layer, and the positions of the first metal bonding pads and the second metal bonding pads are in one-to-one correspondence on the insulating layer; through holes are formed in the four corners of the insulating layer in a penetrating mode, the through holes penetrate through the first metal bonding pads and the second metal bonding pads corresponding to the first metal bonding pads, first conductive copper is arranged in the through holes, one end of the first conductive copper is abutted to the first metal bonding pads, and the other end of the first conductive copper is abutted to the second metal bonding pads. The application has the effect of improving the reliability of the lamp beads.
Description
Technical Field
The application relates to the field of LEDs, in particular to a CHIP LED packaging structure and a processing technology.
Background
At present, in the LED packaging industry, how to further improve the reliability of the LED packaging structure is always a hot spot and a difficult point in the related field. With the development of lighting technology and LED display screens, the requirements on the performances of the LED lamp beads such as air tightness, reliability and the like are higher and higher.
In the current LED packaging technology, most of support structures are embedded in a cup-shaped insulator, metal pins extend out of the insulator and are bent to the bottom, the shape of a dispensing lens is limited by the support structures, the larger problem is that gaps inevitably exist between the support insulator and metal, the support is poor in air tightness, external air and moisture easily permeate into the lamp bead packaging body, so that the problems of oxidation, vulcanization and the like in the lamp bead are caused, the ageing of the lamp bead is accelerated, the reliability and the service life of the lamp bead are reduced, and the situation is to be further improved.
Disclosure of Invention
In order to improve reliability of lamp beads, the application provides a CHIP LED packaging structure and a processing technology.
In a first aspect, the present application provides a CHIP LED package structure, which adopts the following technical scheme:
the CHIP LED packaging structure comprises a first metal layer, a rectangular insulating layer and a second metal layer which are sequentially stacked, wherein the first metal layer comprises a plurality of first metal bonding pads arranged on one side of the insulating layer, the second metal layer comprises a plurality of second metal bonding pads arranged on one side, far away from the first metal bonding pads, of the insulating layer, and the positions of the first metal bonding pads and the second metal bonding pads are in one-to-one correspondence on the insulating layer; through holes are formed in the four corners of the insulating layer in a penetrating mode, the through holes penetrate through the first metal bonding pads and the second metal bonding pads corresponding to the first metal bonding pads, first conductive copper is arranged in the through holes, one end of the first conductive copper is abutted to the first metal bonding pads, and the other end of the first conductive copper is abutted to the second metal bonding pads.
Through adopting above-mentioned technical scheme, through filling solid copper as electrically conductive copper in the through-hole, can pass through the circular telegram between first metal level and the second metal level of electrically conductive copper, in filling the in-process, can fully fill the through-hole, can not leave the clearance to ensure in the use of lamp pearl, can reduce the probability that external gas and moisture permeate into the inside of lamp pearl encapsulation body easily, reduce the inside oxidation of lamp pearl and the emergence of the scheduling problem of vulcanizing, thereby improve the reliability of lamp pearl in the use.
Optionally, the insulating layer runs through along length direction one side and is provided with the fan-shaped hole, just the seting up direction in fan-shaped hole is perpendicular to the plane that first metal pad is located, the fan-shaped hole runs through first metal pad and the second metal pad that first metal pad corresponds, be provided with the electrically conductive copper of second in the fan-shaped hole, just electrically conductive copper one end of second with first metal pad butt, electrically conductive copper other end of second with second metal pad butt, electrically conductive copper of second expose in insulator layer side.
Through adopting above-mentioned technical scheme, through filling solid copper in fan-shaped downthehole and forming the second conductive copper that exposes on the insulating layer, in the lamp pearl use of this application, according to the mounting means of difference, can utilize the second conductive copper to expose the part and go on, carry out the side with the lamp pearl and paste to increase the application scope of this application lamp pearl.
Optionally, the insulating layer is kept away from first metal pad one side is provided with the fan-shaped groove side by side, and two fan-shaped groove is located fan-shaped hole both sides, be provided with the third conductive copper in the fan-shaped hole, and two the third conductive copper respectively with the second metal pad butt that corresponds, the third conductive copper expose in insulator layer side.
Through adopting above-mentioned technical scheme, through filling solid copper as the electrically conductive copper of third in fan-shaped inslot, carry out the in-process of side subsides with the lamp pearl of this application, through carrying out the welding with electrically conductive copper of second and third, alright the side subsides of lamp pearl can be realized to can increase the welding area of lamp pearl in corresponding installation position, thereby improve stability, and through the welding of two electrically conductive copper of third, form the circular telegram of whole lamp pearl in corresponding installation position.
Optionally, the first metal pad penetrating through the fan-shaped hole is set to be a chip metal pad, the chip metal pad is provided with a driving chip, one of the first metal pads is set to be a mounting metal pad, and the mounting metal pad is provided with a plurality of light emitting chips.
Through adopting above-mentioned technical scheme, through installing the drive chip at chip metal bonding pad, installing the luminous chip on the metal bonding pad to realize the single point single accuse in the lamp pearl use.
Optionally, an encapsulation adhesive wrapping all the first metal pads is disposed on the insulating layer.
Through adopting above-mentioned technical scheme, after all pads and chip installation on the lamp pearl finish, through the encapsulation glue on the insulating layer, on the one hand can increase the luminous effect of luminous chip, on the other hand can play the guard action to lamp pearl self in the subsequent use of lamp pearl.
In a second aspect, the processing technology of the CHIP LED package structure provided in the present application adopts the following technical scheme:
the processing technology of the CHIP LED packaging structure is characterized by comprising the following steps of:
s1, dividing a material plate into lamp areas side by side, wherein each lamp area is provided with an insulating layer;
s2, respectively packaging a first metal layer and a second metal layer on two sides of each insulating layer, wherein the first metal layer comprises a plurality of first metal bonding pads, and the second metal layer comprises a plurality of second metal bonding pads;
s3, punching through holes at the four corners of the insulating layer, and penetrating through the first metal bonding pads and the second metal bonding pads at the four corners of the insulating layer, wherein the through holes between adjacent insulating layers are mutually conducted;
s4, punching a fan-shaped hole through the side face of one side of the insulating layer along the length direction, punching a fan-shaped groove on the side face of one side of the insulating layer along the length direction, and punching two fan-shaped grooves which are positioned on two sides of the fan-shaped hole.
S5, filling solid copper in all the through holes, the sector holes and the sector grooves, wherein the through holes are filled with first conductive copper, the sector holes are filled with second conductive copper, and the sector grooves are filled with third conductive copper;
s6, cutting the material plate according to the position of each lamp area to form an independent lamp bead bracket;
s7, packaging glue on each lamp bead support.
By adopting the technical scheme, the solid copper is filled in the through hole to serve as the conductive copper, and the conductive copper can be used for electrifying between the first metal layer and the second metal layer, so that the through hole can be fully filled in the filling process without gaps, the probability that external gas and moisture easily permeate into the inside of the lamp bead packaging body in the using process of the lamp bead is ensured, the problems of oxidation, vulcanization and the like in the lamp bead are reduced, and the reliability of the lamp bead in the using process is improved; in addition, the second conductive copper and the third conductive copper which are exposed can be used for attaching the lamp beads on the corresponding mounting positions in a side-to-side manner in the using stage of the lamp beads, and the mounting modes of the lamp beads can be increased by the second conductive copper and the third conductive copper on one hand, a welding position is provided, and on the other hand, the two third conductive copper can be used for ensuring the electrifying of the lamp beads and the normal use.
Optionally, after step S5, the following steps are further performed:
polishing the parts of the first conductive copper, the second conductive copper and the third conductive copper protruding out of the insulating layer.
Through adopting above-mentioned technical scheme, through the step of polishing with first conductive copper, second conductive copper, third conductive copper, can ensure to keep the parallel and level with the edge layer at the position of filling solid copper, avoid having the arch on solid copper surface, influence follow-up electroplating and welding.
Optionally, in the process of cutting the material plate, the following steps are performed:
when the sector hole is cut, four fifths of the sector hole area is left on the chip metal bonding pad.
By adopting the technical scheme, in the cutting process, the area of four fifths of the sector hole is left on the chip metal bonding pad, and the remaining solid copper of one fifth is used as cutting waste in the cutting process, so that the chip metal bonding pad and the corresponding second metal bonding pad can be ensured to be conducted.
Optionally, after forming the plurality of lamp beads after step S6, the following steps are further performed:
electroplating all the lamp beads one by one, and forming an oxidation preventing layer on the first conductive copper, the second conductive copper and the third conductive copper.
Through adopting above-mentioned technical scheme, through electroplating formation oxidation prevention layer, can ensure subsequent welding process, can realize the power supply to the lamp pearl.
In summary, the present application includes at least one of the following beneficial technical effects:
through filling solid copper in the through hole as conductive copper, can pass through the circular telegram between first metal level and the second metal level through conductive copper, can fill the through hole completely in filling process, can not leave the clearance to ensure in the use of lamp pearl, can reduce the probability that external gas and moisture are permeated into the inside of lamp pearl encapsulation body easily, reduce the appearance of the inside oxidation of lamp pearl and the scheduling problem, thereby improve the reliability of lamp pearl in the use.
The second conductive copper exposed part can be utilized to carry out side pasting on the lamp bead, so that the application range of the lamp bead is increased.
The whole lamp bead is electrified at the corresponding installation position through welding of the two third conductive copper; the welding area of the lamp beads at the corresponding installation positions can be increased, so that the stability is improved.
Drawings
FIG. 1 is a schematic view of the overall structure of a lamp bead according to an embodiment of the present application;
fig. 2 is a schematic structural diagram of the second metal pad side in the embodiment of the present application.
Reference numerals illustrate:
1. an insulating layer; 2. a first metal pad; 3. a second metal pad; 4. a through hole; 5. a first conductive copper; 6. a fan-shaped hole; 7. a second conductive copper; 8. a fan-shaped groove; 9. a third conductive copper; 10. a chip metal pad; 11. a driving chip; 12. mounting a metal bonding pad; 13. and a light emitting chip.
Detailed Description
The present application is described in further detail below.
In a first aspect, the present application provides a CHIP LED package structure, including a first metal layer, an insulating layer 1 having a rectangular shape, and a second metal layer, which are sequentially stacked, where in this embodiment of the present application, the first metal layer includes a plurality of first metal pads 2 encapsulated on one side of the insulating layer 1, and the number of the first metal pads 2 is 5, and the shape and the size of each first metal pad 2 are different; in addition, in the embodiment of the application, the second metal layer includes a plurality of second metal pads 3 encapsulated on a side of the insulating layer 1 away from the first metal pads 2, the second metal pads 3 are in one-to-one correspondence with the number of the first metal pads 2, and the positions of the first metal pads 2 are in one-to-one correspondence with the second metal pads 3 on the insulating layer 1.
In order to realize the circular telegram between first metal pad 2 and the second metal pad 3 that corresponds, through-hole 4 has been run through on insulating layer 1 four angles, and through-hole 4 first runs through first metal pad 2 and the second metal pad 3 that first metal pad 2 corresponds, the intussuseption of through-hole 4 has first conductive copper 5, and first conductive copper 5 adopts solid copper, and first conductive copper 5 one end and first metal pad 2 butt, first conductive copper 5 other end and second metal pad 3 butt, after filling first conductive copper 5 in through-hole 4, need polish first conductive copper 5, ensure that first conductive copper 5 surface keeps flushing, can not have the arch, avoid influencing the stability of follow-up lamp pearl welding.
By filling the first conductive copper 5 on the four corners, the conduction between the first metal bonding pad 2 and the second metal bonding pad 3 on the four corners of the insulating layer 1 can be realized; in addition, in order to realize the conduction between the middle first metal bonding pad 2 and the middle second metal bonding pad 3, a fan-shaped hole 6 is formed in the side surface of one side of the insulating layer 1 along the length direction in a penetrating way, the forming direction of the fan-shaped hole 6 is perpendicular to the plane of the first metal bonding pad 2, the fan-shaped hole 6 penetrates through the second metal bonding pad 3 corresponding to the first metal bonding pad 2 and the first metal bonding pad 2, second conductive copper 7 is filled in the fan-shaped hole 6, solid copper is adopted in the second conductive copper 7, one end of the second conductive copper 7 is abutted to the first metal bonding pad 2, the other end of the second conductive copper 7 is abutted to the second metal bonding pad 3, the second conductive copper 7 is consistent with the first metal bonding pad 2, after the second conductive copper 7 is filled in the through hole 4, the second conductive copper 7 needs to be polished, the surface of the second conductive copper 7 is kept flush, no bulge exists, and the stability of the subsequent lamp bead welding is avoided; simultaneously second conductive copper 7 exposes in insulator layer side, through exposing second conductive copper 7 in insulator layer 1 side, in the installation with the lamp pearl, not only can be through second metal level at installation position welded installation, can also carry out the side subsides with the lamp pearl through the portion of exposing of second conductive copper 7 to increase the application scope of this application lamp pearl.
When the lamp bead can be subjected to side-mounting, the lamp bead is required to be guaranteed to be electrified, so that the fan-shaped grooves 8 are formed in the insulating layer 1 on one side far away from the first metal bonding pad 2, the two fan-shaped grooves 8 are located on two sides of the fan-shaped holes 6, third conductive copper 9 is filled in the fan-shaped holes 6, solid copper is adopted in the third conductive copper 9, the two third conductive copper 9 are respectively abutted to the corresponding second metal bonding pad 3, the third conductive copper 9 is exposed out of the side surface of the insulating layer, the welding area of the lamp bead in side-mounting can be increased, the firmness of the lamp bead is improved, and when the lamp bead is subjected to side-mounting, the anode and the cathode of the lamp bead can be used for conducting input.
In the embodiment of the present application, the first metal pad 2 through which the fan-shaped hole 6 penetrates is a chip metal pad 10, and a driving chip 11 is mounted on the chip metal pad 10, wherein one first metal pad 2 is a mounting metal pad 12, and a plurality of light emitting chips are mounted on the mounting metal pad 12, and in the embodiment of the present application, three light emitting chips are provided; by installing the driving chip 11 on the chip metal bonding pad 10 and installing the light emitting chip on the metal bonding pad 12, single-point single control in the use process of the lamp beads is realized, and the light emitting effect of the lamp beads can be increased in the use process.
In order to protect the lamp bead, the insulating layer 1 is encapsulated with an encapsulation adhesive (not shown in the figure) wrapping all the first metal bonding pads 2, so that the encapsulation adhesive can increase the luminous effect of the luminous chip on one hand, and can protect the lamp bead in the subsequent use process of the lamp bead on the other hand.
The implementation principle of the CHIP LED packaging structure in the embodiment of the application is as follows: the solid copper is filled in the through holes 4 to serve as conductive copper, and the conductive copper can be used for electrifying between the first metal layer and the second metal layer, so that the through holes 4 can be fully filled in the filling process without gaps, the probability that external gas and moisture easily permeate into the inside of the lamp bead packaging body can be reduced in the using process of the lamp bead, the problems of oxidation, vulcanization and the like in the lamp bead are reduced, and the reliability of the lamp bead in the using process is improved; and through the second conductive copper 7 and the third conductive copper 9 that set up, in the use, the lamp pearl also can adopt the mode of side subsides to weld the installation to the second is electrically conductive can not exist the clearance with the third conductive copper 9 yet, when can increase the installation mode that the lamp pearl carries out the side subsides, can also guarantee the reliability of lamp pearl in the use.
In a second aspect, the processing technology of the CHIP LED package structure provided in the present application adopts the following technical scheme:
a process for fabricating a CHIP LED package structure, comprising:
s1, dividing a material plate into lamp areas side by side, wherein each lamp area is required to be provided with an independent lamp bead support, and cutting prompting lines are set in advance on the circumference of the material plate, and in the embodiment of the application, each lamp area is an insulating layer 1.
S2, first two sides of each insulating layer 1 are respectively packaged with a first metal layer and a second metal layer, wherein the first metal layer comprises 5 first metal bonding pads 2, the second metal layer comprises 5 second metal bonding pads 3, and the positions of the first metal bonding pads 2 and the positions of the second metal bonding pads 3 are in one-to-one correspondence.
S3, punching through holes 4 at the positions of the four corners of the insulating layer 1, and penetrating the through holes 4 through the first metal pad 2 and the second metal pad 3 at the positions of the four corners of the insulating layer 1, wherein the through holes 4 between the adjacent insulating layers 1 on the material plate are mutually conducted.
S4, punching a fan-shaped hole 6 at the side surface of one side of the insulating layer 1 along the length direction, punching a fan-shaped groove 8 at the side surface of one side of the insulating layer 1 along the length direction, and punching two fan-shaped grooves 8 which are positioned at two sides of the fan-shaped hole 6, wherein the fan-shaped groove 8 does not penetrate through the insulating layer 1.
S5, filling solid copper in all the through holes 4, the fan-shaped holes 6 and the fan-shaped grooves 8, wherein the through holes 4 are internally provided with first conductive copper 5, the fan-shaped holes 6 are internally provided with second conductive copper 7, and the fan-shaped grooves 8 are internally provided with third conductive copper 9;
after the first conductive copper 5, the second conductive copper 7 and the third conductive copper 9 are filled, as the bulges possibly exist on the surface of the solid copper filled at the corresponding positions, in order to ensure the stability after the installation and welding of the subsequent lamp beads, the parts of the first conductive copper 5, the second conductive copper 7 and the third conductive copper 9, protruding out of the insulating layer 1, are polished, so that the positions filled with the solid copper can be ensured to be kept flush with the edge rolling layer, and the bulges on the surface of the solid copper are avoided, thereby influencing the subsequent electroplating and welding.
S6, cutting the material plate according to the position of each lamp area to form an independent lamp bead support, cutting according to a cutting line arranged in advance in the cutting process, and after the cutting of the material plate is finished, leaving the area of four fifths of the sector holes 6 on the chip metal bonding pad 10, wherein the remaining one fifth of solid copper is used as cutting waste in the cutting process, and the conduction between the chip metal bonding pad 10 and the corresponding second metal bonding pad 3 can be ensured through the cutting.
And after forming the lamp pearl of one by one, still need to electroplate every lamp pearl one by one, form the oxidation preventing layer at first conductive copper 5, second conductive copper 7, third conductive copper 9, can ensure subsequent welding process, can realize the power supply to the lamp pearl.
S7, packaging glue on each lamp bead bracket; the packaging adhesive can increase the luminous effect of the luminous chip on one hand and can play a role in protecting the lamp bead in the subsequent use process of the lamp bead on the other hand.
The implementation principle of the processing technology of the CHIP LED packaging structure in the embodiment of the application is as follows: the solid copper is filled in the through holes 4 to serve as conductive copper, and the conductive copper can be used for electrifying between the first metal layer and the second metal layer, so that the through holes 4 can be fully filled in the filling process without gaps, the probability that external gas and moisture easily permeate into the inside of the lamp bead packaging body can be reduced in the using process of the lamp bead, the problems of oxidation, vulcanization and the like in the lamp bead are reduced, and the reliability of the lamp bead in the using process is improved; in addition, the second conductive copper 7 and the third conductive copper 9 are exposed, the lamp beads can be laterally attached to corresponding mounting positions in the use stage of the lamp beads, the mounting modes of the lamp beads can be increased through the second conductive copper 7 and the third conductive copper 9, welding positions are provided, and on the other hand, the two third conductive copper 9 can ensure the electrifying of the lamp beads and are normally used.
The foregoing are all preferred embodiments of the present application, and are not intended to limit the scope of the present application in any way, therefore: all equivalent changes in structure, shape and principle of this application should be covered in the protection scope of this application.
Claims (3)
1. The processing technology of the CHIP LED packaging structure is characterized in that the CHIP LED packaging structure comprises the following components: the insulating layer (1) is sequentially laminated with a rectangular first metal layer, the rectangular insulating layer (1) and a second metal layer, the first metal layer comprises a plurality of first metal bonding pads (2) arranged on one side of the insulating layer (1), the second metal layer comprises a plurality of second metal bonding pads (3) arranged on one side, far away from the first metal bonding pads (2), of the insulating layer (1), and the positions of the first metal bonding pads (2) and the second metal bonding pads (3) are in one-to-one correspondence on the insulating layer (1); through holes (4) are formed in the four corners of the insulating layer (1) in a penetrating mode, the through holes (4) penetrate through the first metal bonding pads (2) and the second metal bonding pads (3) corresponding to the first metal bonding pads (2), first conductive copper (5) is arranged in the through holes (4), one end of the first conductive copper (5) is abutted to the first metal bonding pads (2), and the other end of the first conductive copper (5) is abutted to the second metal bonding pads (3);
the insulating layer (1) is provided with a fan-shaped hole (6) in a penetrating mode along one side face of the length direction, the opening direction of the fan-shaped hole (6) is perpendicular to the plane where the first metal bonding pad (2) is located, the fan-shaped hole (6) penetrates through the first metal bonding pad (2) and a second metal bonding pad (3) corresponding to the first metal bonding pad (2), second conductive copper (7) is arranged in the fan-shaped hole (6), one end of the second conductive copper (7) is abutted to the first metal bonding pad (2), the other end of the second conductive copper (7) is abutted to the second metal bonding pad (3), and the second conductive copper (7) is exposed out of the side face of the insulating layer (1);
a fan-shaped groove (8) is arranged on one side, away from the first metal bonding pad (2), of the insulating layer (1) side by side, two fan-shaped grooves (8) are positioned on two sides of the fan-shaped hole (6), third conductive copper (9) is arranged in the fan-shaped groove (8), the two third conductive copper (9) are respectively abutted to the corresponding second metal bonding pad (3), and the third conductive copper (9) is exposed out of the side face of the insulating layer (1);
the fan-shaped hole (6) penetrates through the first metal bonding pad (2) to be arranged as a chip metal bonding pad (10), the chip metal bonding pad (10) is provided with a driving chip (11), one of the first metal bonding pads (2) is arranged as a mounting metal bonding pad (12), and the mounting metal bonding pad (12) is provided with a plurality of light emitting chips (13);
the CHIP LED packaging structure processing technology comprises the following steps:
s1, dividing a material plate into lamp areas side by side, wherein each lamp area is provided with an insulating layer (1);
s2, respectively packaging a first metal layer and a second metal layer on two sides of each insulating layer (1), wherein the first metal layer comprises a plurality of first metal bonding pads (2), and the second metal layer comprises a plurality of second metal bonding pads (3);
s3, punching through holes (4) at the four corners of the insulating layer (1), and penetrating the through holes (4) through the first metal bonding pads (2) and the second metal bonding pads (3) at the four corners of the insulating layer (1), wherein the through holes (4) between adjacent insulating layers (1) are mutually conducted;
s4, punching a sector hole (6) through the side surface of one side of the insulating layer (1) along the length direction, punching a sector groove (8) through the side surface of one side of the insulating layer (1) along the length direction, and punching two sector grooves (8) which are positioned on two sides of the sector hole (6);
s5, filling solid copper in all the through holes (4), the sector holes (6) and the sector grooves (8), wherein the through holes (4) are internally provided with first conductive copper (5), the sector holes (6) are internally provided with second conductive copper (7), and the sector grooves (8) are internally provided with third conductive copper (9);
s6, cutting the material plate according to the position of each lamp area to form an independent lamp bead bracket;
s7, packaging glue on each lamp bead bracket;
wherein, after the step S5, the following steps are further performed: polishing the parts of the first conductive copper (5), the second conductive copper (7) and the third conductive copper (9) protruding out of the insulating layer (1);
in the process of cutting the material plate, the following steps are carried out: when the sector hole (6) is cut, a region of four fifths of the sector hole (6) is left on the chip metal pad (10).
2. The processing technology of the CHIP LED package structure according to claim 1, wherein the insulating layer (1) is provided with a packaging adhesive wrapping all the first metal pads (2).
3. The process of claim 1, further comprising, after forming the plurality of beads after step S6, the steps of:
all the lamp beads are electroplated one by one, and an oxidation preventing layer is formed on the first conductive copper (5), the second conductive copper (7) and the third conductive copper (9).
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