CN115354279B - 一种应用于单晶镍基合金与表面热障涂层间的扩散屏蔽层及其制备方法 - Google Patents
一种应用于单晶镍基合金与表面热障涂层间的扩散屏蔽层及其制备方法 Download PDFInfo
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- CN115354279B CN115354279B CN202211020243.2A CN202211020243A CN115354279B CN 115354279 B CN115354279 B CN 115354279B CN 202211020243 A CN202211020243 A CN 202211020243A CN 115354279 B CN115354279 B CN 115354279B
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- 238000009792 diffusion process Methods 0.000 title claims abstract description 94
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 title claims abstract description 77
- 239000000956 alloy Substances 0.000 title claims abstract description 59
- 229910045601 alloy Inorganic materials 0.000 title claims abstract description 57
- 229910052759 nickel Inorganic materials 0.000 title claims abstract description 38
- 239000012720 thermal barrier coating Substances 0.000 title claims abstract description 31
- 238000002360 preparation method Methods 0.000 title claims abstract description 19
- 238000004942 thermal barrier coating method Methods 0.000 title description 2
- 239000013078 crystal Substances 0.000 claims abstract description 46
- 238000010438 heat treatment Methods 0.000 claims abstract description 36
- 238000005507 spraying Methods 0.000 claims abstract description 32
- 239000011159 matrix material Substances 0.000 claims abstract description 26
- 229910052751 metal Inorganic materials 0.000 claims abstract description 22
- 239000002184 metal Substances 0.000 claims abstract description 22
- 239000011248 coating agent Substances 0.000 claims abstract description 18
- 238000000576 coating method Methods 0.000 claims abstract description 18
- 239000000463 material Substances 0.000 claims abstract description 16
- 238000010791 quenching Methods 0.000 claims abstract description 9
- 230000000171 quenching effect Effects 0.000 claims abstract description 9
- 230000004888 barrier function Effects 0.000 claims description 26
- 238000000034 method Methods 0.000 claims description 20
- 238000001816 cooling Methods 0.000 claims description 15
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 14
- 238000007733 ion plating Methods 0.000 claims description 13
- 230000008569 process Effects 0.000 claims description 12
- 238000000992 sputter etching Methods 0.000 claims description 12
- 238000005498 polishing Methods 0.000 claims description 8
- 229910052757 nitrogen Inorganic materials 0.000 claims description 7
- 230000009471 action Effects 0.000 claims description 6
- 238000007750 plasma spraying Methods 0.000 claims description 6
- 238000005530 etching Methods 0.000 claims description 5
- 239000007789 gas Substances 0.000 claims description 5
- 238000004519 manufacturing process Methods 0.000 claims description 5
- 239000013077 target material Substances 0.000 claims description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 5
- 239000012298 atmosphere Substances 0.000 claims description 4
- 238000000227 grinding Methods 0.000 claims description 4
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 4
- 238000007781 pre-processing Methods 0.000 claims description 4
- 238000004506 ultrasonic cleaning Methods 0.000 claims description 4
- 238000010290 vacuum plasma spraying Methods 0.000 claims description 3
- 238000010285 flame spraying Methods 0.000 claims description 2
- 150000003839 salts Chemical class 0.000 claims description 2
- 230000000694 effects Effects 0.000 abstract description 9
- 239000010410 layer Substances 0.000 description 90
- 239000000758 substrate Substances 0.000 description 10
- 230000006399 behavior Effects 0.000 description 7
- 230000005540 biological transmission Effects 0.000 description 7
- 229910000601 superalloy Inorganic materials 0.000 description 7
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 6
- 229910001093 Zr alloy Inorganic materials 0.000 description 6
- 239000000919 ceramic Substances 0.000 description 5
- 239000002131 composite material Substances 0.000 description 5
- 229910052726 zirconium Inorganic materials 0.000 description 5
- 230000009286 beneficial effect Effects 0.000 description 4
- 230000000630 rising effect Effects 0.000 description 4
- 230000035882 stress Effects 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 229910052786 argon Inorganic materials 0.000 description 3
- 238000005121 nitriding Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 238000005253 cladding Methods 0.000 description 2
- 230000008642 heat stress Effects 0.000 description 2
- 239000003921 oil Substances 0.000 description 2
- 230000008520 organization Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 239000007921 spray Substances 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- AZDRQVAHHNSJOQ-UHFFFAOYSA-N alumane Chemical compound [AlH3] AZDRQVAHHNSJOQ-UHFFFAOYSA-N 0.000 description 1
- 239000012300 argon atmosphere Substances 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000011068 loading method Methods 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000004098 selected area electron diffraction Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
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Abstract
一种应用于单晶镍基合金与表面热障涂层间的扩散屏蔽层及其制备方法，先对单晶镍基合金表面进行预处理及离子刻蚀；再在单晶镍基合金表面喷涂ZrN扩散屏蔽层；然后在ZrN扩散屏蔽层外侧喷涂MCrAlY金属粘结层；最后对单晶镍基合金表面沉积的材料进行高温淬火热处理，得到涂层与基体间具有纳米孪晶ZrN扩散屏蔽层；利用在热障涂层与单晶镍基合金基体之间制备具有纳米孪晶结构的ZrN扩散屏蔽层以抑制热障涂层与基体之间的元素互扩散行为，具有优异的扩散屏蔽作用；对ZrN扩散屏蔽层进行淬火热处理生成纳米孪晶结构，起到增韧ZrN的效果，提高ZrN与内侧单晶基体及外侧热障涂层间的结合性能。
Description
技术领域
本发明涉及涡轮叶片表面热障涂层与涡轮叶片用单晶镍基合金间的结合技术领域，具体涉及一种应用于单晶镍基合金与表面热障涂层间的扩散屏蔽层及其制备方法。
背景技术
涡轮叶片被广泛应用于汽车发动机、航空发动机、船用发动机及燃气轮机等领域，由于涡轮叶片工作时所承受的温度高于涡轮叶片所用镍基合金材料的熔点，所以降低叶片温度或提升叶片的承温能力已成为迫切需要解决的关键问题。目前工业界及学术界主要通过开发使用单晶镍基合金材料的涡轮叶片以及在涡轮叶片表面喷涂具有隔热作用的热障涂层来提高涡轮叶片的高温力学性能与承温能力。但是在高温环境中热障涂层体系中的金属粘结层会与单晶高温合金基体之间发生元素互扩散，这种元素互扩散会导致单晶高温合金基体中生成脆性的拓扑密堆相，严重影响单晶高温合金基体的力学性能，并已成为涡轮叶片失效的最关键因素之一。
学术界及工业界主要通过在单晶高温合金及热障涂层之间添加扩散屏蔽层来解决热障涂层与单晶高温合金间的元素互扩散问题。目前所用的扩散屏蔽层材料主要包括三种类型，即金属、陶瓷和复合材料，其中复合扩散屏蔽层材料主要包含Al2O3/Al和Zr/ZrN/Zr等。
在热障涂层与多晶镍基合金界面制备Zr/ZrN/Zr三层扩散屏蔽层(Cai Y,Tao CH,Lu F,et al.Structure and oxidation behavior of gradient Zr/ZrN/Zr diffusionbarrier on the Ni-based superalloy by arc ion plating；proceedings of theAdvanced Materials Research,F,2010[C].Trans Tech Publ.)，该三层扩散屏蔽层由内外两侧的Zr金属以及中间的ZrN陶瓷构成，该扩散屏蔽层厚度约为10-12μm，由电弧离子镀方法制备，所用靶材为纯Zr，喷涂Zr层时为真空环境，喷涂中间ZrN层时为氮气环境，喷涂时间接近60min，喷涂后，将带有Zr/ZrN/Zr多层扩散屏蔽层的样品在1050℃真空中退火3h，升温速率为9℃/min。应用在硅晶片和铝之间的Zr/ZrN双层扩散屏蔽层(M,Nygren S,Petersson C,et al.A comparative study of the diffusion barrier properties ofTiN and ZrN[J].Thin solid films,1986,145(1):81-8.)，使用的喷涂方法是磁控溅射，采用的靶材是纯Zr，Zr层的喷涂环境是真空，ZrN则是氮气环境；喷涂前先对硅晶片在氢氟酸中浸蚀，然后加载硅晶片，抽真空；在正式喷涂前先对金属靶材进行至少30min的预沉积，之后在氮气体积分数为2％的氩气环境中沉积ZrN涂层。
Zr/ZrN/Zr与Zr/ZrN复合扩散屏蔽层结构复杂，制备工艺复杂，制备效率过低，且扩散屏蔽效果及结合性能均欠佳；ZrN外侧的Zr金属具有非常高的氧亲和性，在高温下会优先向外扩散并发生氧化或在涂层/基体界面发生内氧化，严重影响涂层的结构完整性；此外，Zr/ZrN/Zr或Zr/ZrN扩散屏蔽层中并未制备出纳米孪晶的结构，所以不能起到增韧的效果，扩散屏蔽层的结合性较差。
应用在锆合金表面的ZrN扩散屏蔽层(崔严光,李崇,卢俊强,et al.一种用于锆合金包壳管外表面的涂层及制作方法[Z].)，使用的制备方法是对锆合金基体进行氮化，其应用于核反应堆锆合金包壳管外表面的涂层，ZrN层是利用锆合金氮化方法制备，该制备方法效率低，无法精确控制ZrN的厚度，且在氮化过程中N会扩散进锆合金基体中导致基体的脆性增大。
综上，现有的在热障涂层和单晶高温合金基体之间制备的金属扩散屏蔽层均不能有效抑制涂层与基体之间的元素扩散行为，金属类扩散屏蔽层自身也会与基体与涂层间发生元素互扩散，扩散屏蔽效果均欠佳；陶瓷扩散屏蔽层材料以及复合扩散屏蔽层材料由于与外侧涂层及内侧基体间热膨胀系数差异较大，会导致扩散屏蔽层的结合性非常差，且易受到热应力的影响。
发明内容
为了克服上述现有技术的缺点，本发明的目的在于提供了一种应用于单晶镍基合金与表面热障涂层间的扩散屏蔽层及其制备方法，在热障涂层与涡轮叶片单晶镍基合金基体之间制备具有纳米孪晶结构的ZrN扩散屏蔽层以抑制热障涂层与基体之间的元素互扩散行为，具有优异的扩散屏蔽作用；对ZrN扩散屏蔽层进行淬火热处理，提高ZrN与内侧单晶基体及外侧热障涂层间的结合性。
为了达到上述目的，本发明采取的技术方案为：
一种应用于单晶镍基合金与表面热障涂层间的扩散屏蔽层，包括单晶镍基合金表面的纳米孪晶ZrN扩散屏蔽层，纳米孪晶ZrN扩散屏蔽层的外侧设有MCrAlY金属粘结层。
一种应用于单晶镍基合金与表面热障涂层间的扩散屏蔽层的制备方法，包括以下步骤：
第一步，对单晶镍基合金表面进行预处理及离子刻蚀；
第二步，在处理后的单晶镍基合金表面喷涂ZrN扩散屏蔽层；
第三步，在ZrN扩散屏蔽层外侧喷涂MCrAlY金属粘结层；
第四步，对单晶镍基合金表面沉积得到的材料进行高温淬火热处理，得到涂层与基体间具有纳米孪晶ZrN扩散屏蔽层。
所述的第一步中预处理包括打磨、抛光以及超声清洗，使得单晶镍基合金表面呈镜面且光洁；对抛光和清洗后的单晶镍基合金表面进行离子刻蚀，去除由于抛磨所引入的表面残余应力层，离子刻蚀的条件为：电流90A，真空腔内充入Ar气，气压为0.3Pa，气体流量为300sccm，温度为350℃，刻蚀时间为25min。
所述的第二步中喷涂方法为电弧离子镀，所用靶材为高纯度Zr，所用气氛为高纯度氮气，ZrN层的厚度为5-15μm；电弧离子镀方法的参数为：电流为50-100A，真空腔内充入N2气，气压为1-2Pa，气体流量为1000sccm，温度为350-450℃，喷涂时长为100-250min。
所述的第三步中MCrAlY包括NiCrAlY、NiCoCrAlY和CoNiCrAlY的材料，喷涂方法包括大气等离子喷涂、低气压等离子喷涂、真空等离子喷涂、多弧离子镀、磁控溅射、超音速火焰喷涂等，金属粘结层厚度为20-200μm。
所述的第四步中热处理分为升温、恒温和快速冷却三个阶段，升温阶段升温速率1-20K/min，恒温阶段时间为0-4h，快速冷却过程中的介质包括空气、水、盐水、油等，热处理的温度为1000-1150℃。
所述的第四步中在高温热处理的快速冷却过程中，ZrN内侧单晶镍基合金和外侧MCrAlY在ZrN层上施加的压应力的作用下，ZrN具有低层错能的特性，ZrN层内的孪晶开始形核生长，最终生成纳米孪晶ZrN扩散屏蔽层。
本发明的有益效果为：
本发明利用在热障涂层与涡轮叶片单晶镍基合金基体之间制备纳米孪晶ZrN扩散屏蔽层以抑制热障涂层与基体之间的元素互扩散行为，采用的ZrN陶瓷扩散屏蔽层材料，具有优异的扩散屏蔽作用。本发明对制备得到的ZrN扩散屏蔽层进行淬火热处理，利用ZrN低层错能的优势使得其在快速降温的过程中生成纳米孪晶结构，纳米孪晶ZrN扩散屏蔽层具有高韧性的特点，能够提高ZrN与内侧单晶基体及外侧热障涂层间的结合性。
本发明采用电弧离子镀方法沉积单层的ZrN扩散屏蔽层能够有效降低工艺复杂性，提高喷涂效率。
本发明制备的单层ZrN扩散屏蔽层相对于多层复合涂层具有稳定性高，不易发生扩散和氧化的特性，具有更优异的扩散屏蔽效果。
本发明利用淬火方法对基体-ZrN扩散屏蔽层-MCrAlY粘结层体系进行热处理，使得ZrN扩散屏蔽层在热应力的作用下生成纳米孪晶结构，相对于普通的ZrN涂层具有更优异的韧性，能够提高ZrN层与外侧MCrAlY粘结层及内侧基体间的结合力，能够抵抗热应力的作用。
附图说明
图1为本发明一种应用于单晶镍基合金与表面热障涂层间的扩散屏蔽层示意图。
图2为本发明一种应用于单晶镍基合金与表面热障涂层间的扩散屏蔽层的制备方法的流程图。
图3为本发明实施例1中制备所得纳米孪晶ZrN扩散屏蔽层的透射电子显微镜组织结构图。
图4为本发明实施例3中制备所得纳米孪晶ZrN扩散屏蔽层的透射电子显微镜组织结构图。
具体实施方式
下面结合附图和实施例对本发明做详细描述。
实施例1，如图1所示，一种应用于单晶镍基合金与表面热障涂层间的扩散屏蔽层，包括单晶镍基合金表面的纳米孪晶ZrN扩散屏蔽层，纳米孪晶ZrN扩散屏蔽层的外侧设有MCrAlY金属粘结层。
如图2所示，一种应用于单晶镍基合金与表面热障涂层间的扩散屏蔽层的制备方法，包括以下步骤：
第一步，对单晶镍基合金表面进行预处理及离子刻蚀：预处理包括打磨、抛光以及超声清洗，使得单晶镍基合金表面呈镜面且光洁；对抛光和清洗后的单晶镍基合金表面进行离子刻蚀，去除由于抛磨所引入的表面残余应力层，离子刻蚀的条件为：电流90A，真空腔内充入Ar气，气压为0.3Pa，气体流量为300sccm，温度为350℃，刻蚀时间为25min；
第二步，在处理后的单晶镍基合金表面喷涂ZrN扩散屏蔽层：喷涂方法为电弧离子镀，所用靶材为高纯度Zr，所用气氛为高纯度氮气，ZrN层的厚度为10μm；电弧离子镀方法的参数为：电流为80A，真空腔内充入N2气，气压为1.5Pa，气体流量为1000sccm，温度为400℃，喷涂时长为150min；
第三步，在ZrN扩散屏蔽层外侧喷涂MCrAlY金属粘结层：MCrAlY包括NiCrAlY、NiCoCrAlY和CoNiCrAlY的材料，喷涂方法为大气等离子喷涂，金属粘结层厚度为100μm；
第四步，对单晶镍基合金表面沉积得到的材料进行高温淬火热处理，热处理分为升温、恒温和快速冷却三个阶段，升温阶段升温速率10K/min，恒温阶段时间为2h，快速冷却过程中的介质为空气，热处理的温度为1100℃；
得到涂层与基体间具有纳米孪晶ZrN扩散屏蔽层：在高温热处理的快速冷却过程中，ZrN内侧单晶镍基合金和外侧MCrAlY在ZrN层上施加的压应力的作用下，ZrN具有低层错能的特性，ZrN层内的孪晶开始形核生长，最终生成纳米孪晶ZrN扩散屏蔽层，如图1所示。
本实施例的有益效果：利用透射电子显微镜对制备得到的ZrN扩散屏蔽层进行微观结构研究，测试结果如图3所示，根据透射电镜明场像图(a)、暗场像图(b)和图(c)以及选区电子衍射图谱图(d)的结果可知，该ZrN扩散屏蔽层呈明显的纳米孪晶结构；对制备所得的MCrAlY-ZrN-单晶基体涂层体系在1050℃的氩气环境中保温500h，结果显示单晶合金基体中未发现拓扑密堆相的生成，这证明ZrN扩散屏蔽层能有效屏蔽MCrAlY与单晶合金基体间的元素互扩散行为。
实施例2，制备方法同实施例1，只是将实施例1第二步中ZrN层的厚度改为5μm，电流改为50A，气压改为1Pa，温度改为350℃，喷涂时长改为100min；第三步中喷涂方法改为真空等离子喷涂，金属粘结层厚度改为20μm；第四步中升温阶段升温速率改为1K/min，恒温阶段时间改为0h，快速冷却过程中的介质改为水，热处理的温度改为1000℃。
本实施例的有益效果：利用透射电子显微镜对制备得到的ZrN扩散屏蔽层进行微观结构研究，研究表明该ZrN扩散屏蔽层呈明显的纳米孪晶结构。对制备所得的MCrAlY-ZrN-单晶基体涂层体系在1050℃的氩气环境中保温500h，结果显示单晶合金基体中未发现拓扑密堆相的生成，这证明ZrN扩散屏蔽层能有效屏蔽MCrAlY与单晶合金基体间的元素互扩散行为。
实施例3，制备方法同实施例1，只是将实施例1第二步中ZrN层的厚度改为15μm，电流改为100A，气压改为2Pa，温度改为450℃，喷涂时长改为250min；第三步中喷涂方法改为磁控溅射，金属粘结层厚度改为20 0μm；第四步中升温阶段升温速率改为20K/min，恒温阶段时间改为4h，快速冷却过程中的介质改为油，热处理的温度改为1150℃。
本实施例的有益效果：利用透射电子显微镜对制备得到的ZrN扩散屏蔽层进行微观结构研究，测试结果如图4所示，根据透射电镜暗场像图(a)和图(b)以及高分辨像图(c)的结果可知，ZrN扩散屏蔽层呈明显的纳米孪晶结构。对制备所得的MCrAlY-ZrN-单晶基体涂层体系在1050℃的氩气环境中保温500h，结果显示单晶合金基体中未发现拓扑密堆相的生成，这证明ZrN扩散屏蔽层能有效屏蔽MCrAlY与单晶合金基体间的元素互扩散行为。
Claims (6)
1.一种应用于单晶镍基合金与表面热障涂层间的扩散屏蔽层的制备方法，其特征在于：一种应用于单晶镍基合金与表面热障涂层间的扩散屏蔽层，包括单晶镍基合金表面的纳米孪晶ZrN扩散屏蔽层，纳米孪晶ZrN扩散屏蔽层的外侧设有MCrAlY金属粘结层；
所述的一种应用于单晶镍基合金与表面热障涂层间的扩散屏蔽层的制备方法，包括以下步骤：
第一步，对单晶镍基合金表面进行预处理及离子刻蚀；
第二步，在处理后的单晶镍基合金表面喷涂ZrN扩散屏蔽层；
第三步，在ZrN扩散屏蔽层外侧喷涂MCrAlY金属粘结层；
第四步，对单晶镍基合金表面沉积得到的材料进行高温淬火热处理，得到涂层与基体间具有纳米孪晶ZrN扩散屏蔽层；
所述的第四步中热处理分为升温、恒温和快速冷却三个阶段，升温阶段升温速率1-20K/min，恒温阶段时间为0-4h，快速冷却过程中的介质包括空气、水、盐水、油，热处理的温度为1000-1150℃。
2.根据权利要求1所述的制备方法，其特征在于：所述的第一步中预处理包括打磨、抛光以及超声清洗，使得单晶镍基合金表面呈镜面且光洁；对抛光和清洗后的单晶镍基合金表面进行离子刻蚀，去除由于抛磨所引入的表面残余应力层，离子刻蚀的条件为：电流90A，真空腔内充入Ar气，气压为0.3Pa，气体流量为300sccm，温度为350℃，刻蚀时间为25min。
3.根据权利要求1所述的制备方法，其特征在于：所述的第二步中喷涂方法为电弧离子镀，所用靶材为高纯度Zr，所用气氛为高纯度氮气，ZrN层的厚度为5-15μm；电弧离子镀方法的参数为：电流为50-100A，真空腔内充入N2气，气压为1-2Pa，气体流量为1000sccm，温度为350-450℃，喷涂时长为100-250min。
4.根据权利要求1所述的制备方法，其特征在于：所述的第三步中MCrAlY包括NiCrAlY、NiCoCrAlY和CoNiCrAlY的材料，喷涂方法包括大气等离子喷涂、低气压等离子喷涂、真空等离子喷涂、多弧离子镀、磁控溅射、超音速火焰喷涂，金属粘结层厚度为20-200μm。
5.根据权利要求1所述的制备方法，其特征在于：所述的第四步中在高温热处理的快速冷却过程中，ZrN内侧单晶镍基合金和外侧MCrAlY在ZrN层上施加的压应力的作用下，ZrN具有低层错能的特性，ZrN层内的孪晶开始形核生长，最终生成纳米孪晶ZrN扩散屏蔽层。
6.根据权利要求1所述的一种应用于单晶镍基合金与表面热障涂层间的扩散屏蔽层的制备方法，其特征在于，包括以下步骤：
第一步，对单晶镍基合金表面进行预处理及离子刻蚀：预处理包括打磨、抛光以及超声清洗，使得单晶镍基合金表面呈镜面且光洁；对抛光和清洗后的单晶镍基合金表面进行离子刻蚀，去除由于抛磨所引入的表面残余应力层，离子刻蚀的条件为：电流90A，真空腔内充入Ar气，气压为0.3Pa，气体流量为300sccm，温度为350℃，刻蚀时间为25min；
第二步，在处理后的单晶镍基合金表面喷涂ZrN扩散屏蔽层：喷涂方法为电弧离子镀，所用靶材为高纯度Zr，所用气氛为高纯度氮气，ZrN层的厚度为10μm；电弧离子镀方法的参数为：电流为80A，真空腔内充入N2气，气压为1.5Pa，气体流量为1000sccm，温度为400℃，喷涂时长为150min；
第三步，在ZrN扩散屏蔽层外侧喷涂MCrAlY金属粘结层：MCrAlY包括NiCrAlY、NiCoCrAlY和CoNiCrAlY的材料，喷涂方法为大气等离子喷涂，金属粘结层厚度为100μm；
第四步，对单晶镍基合金表面沉积得到的材料进行高温淬火热处理，热处理分为升温、恒温和快速冷却三个阶段，升温阶段升温速率10K/min，恒温阶段时间为2h，快速冷却过程中的介质为空气，热处理的温度为1100℃；
得到涂层与基体间具有纳米孪晶ZrN扩散屏蔽层：在高温热处理的快速冷却过程中，ZrN内侧单晶镍基合金和外侧MCrAlY在ZrN层上施加的压应力的作用下，ZrN具有低层错能的特性，ZrN层内的孪晶开始形核生长，最终生成纳米孪晶ZrN扩散屏蔽层。
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