CN115343788A - Quartz microlens preparation method based on cyclic etching process and quartz microlens - Google Patents
Quartz microlens preparation method based on cyclic etching process and quartz microlens Download PDFInfo
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- CN115343788A CN115343788A CN202210994615.5A CN202210994615A CN115343788A CN 115343788 A CN115343788 A CN 115343788A CN 202210994615 A CN202210994615 A CN 202210994615A CN 115343788 A CN115343788 A CN 115343788A
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- 238000005530 etching Methods 0.000 title claims abstract description 86
- 238000000034 method Methods 0.000 title claims abstract description 73
- 239000010453 quartz Substances 0.000 title claims abstract description 68
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 title claims abstract description 68
- 230000008569 process Effects 0.000 title claims abstract description 38
- 125000004122 cyclic group Chemical group 0.000 title claims abstract description 18
- 238000002360 preparation method Methods 0.000 title claims abstract description 14
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 58
- 238000002844 melting Methods 0.000 claims abstract description 24
- 230000008018 melting Effects 0.000 claims abstract description 23
- 238000001259 photo etching Methods 0.000 claims abstract description 10
- 239000007789 gas Substances 0.000 claims description 13
- 238000009616 inductively coupled plasma Methods 0.000 claims description 11
- 238000012546 transfer Methods 0.000 claims description 5
- 238000000206 photolithography Methods 0.000 claims description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims 4
- 229910052786 argon Inorganic materials 0.000 claims 2
- 229910000510 noble metal Inorganic materials 0.000 claims 1
- 239000000758 substrate Substances 0.000 description 12
- 230000007547 defect Effects 0.000 description 4
- 238000001312 dry etching Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 230000008901 benefit Effects 0.000 description 3
- 238000003763 carbonization Methods 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 238000009825 accumulation Methods 0.000 description 2
- 238000003491 array Methods 0.000 description 2
- 239000000084 colloidal system Substances 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 238000012876 topography Methods 0.000 description 2
- 230000009471 action Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000001186 cumulative effect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 230000004927 fusion Effects 0.000 description 1
- 238000001746 injection moulding Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000010309 melting process Methods 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 238000012634 optical imaging Methods 0.000 description 1
- 238000004321 preservation Methods 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 238000010992 reflux Methods 0.000 description 1
- 230000010076 replication Effects 0.000 description 1
- 238000001878 scanning electron micrograph Methods 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- 229920001169 thermoplastic Polymers 0.000 description 1
- 239000004416 thermosoftening plastic Substances 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
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Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B3/00—Simple or compound lenses
- G02B3/0006—Arrays
- G02B3/0012—Arrays characterised by the manufacturing method
- G02B3/0018—Reflow, i.e. characterized by the step of melting microstructures to form curved surfaces, e.g. manufacturing of moulds and surfaces for transfer etching
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B3/00—Simple or compound lenses
- G02B3/0006—Arrays
- G02B3/0012—Arrays characterised by the manufacturing method
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0005—Production of optical devices or components in so far as characterised by the lithographic processes or materials used therefor
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/427—Stripping or agents therefor using plasma means only
Abstract
The invention provides a quartz micro-lens preparation method based on a cyclic etching process and a quartz micro-lens, wherein the method comprises the following steps: and (3) photoetching: preparing a photoresist cylinder on the surface of quartz; hot melting: carrying out hot melting treatment on the quartz surface with the photoresist cylinder to convert the photoresist cylinder into a photoresist lens body; etching: and carrying out circular etching treatment on the photoresist lens body on the quartz surface until the photoresist completely disappears, thereby obtaining the quartz micro-lens array. The method is simple to operate and convenient to realize in process.
Description
Technical Field
The invention relates to the technical field of micro-nano processing, in particular to a quartz micro-lens preparation method based on a cyclic etching process and a quartz micro-lens.
Background
The micro lens array is a multifunctional micro optical device, can perform modulation such as diffusion, focusing and shaping on incident light, further realizes large visual angle, low phase difference, high time resolution, infinite depth of field and the like, and has wide application potential in the field of integrated optical imaging, optical communication systems and optical signal processing systems.
The main methods for producing microlenses are mainly classified into direct methods and indirect methods. The direct method is that the shape of the microlens is usually formed based on the surface tension effect when the material is in a thermoplastic state or a liquid state, thereby producing an ultra-smooth surface. The current direct method mainly comprises a thermal reflux method, a droplet jetting method, a micro-mold direct pressing method and the like. The indirect method is to make a concave mold and then to produce the final lens by the replication techniques such as hot press molding and injection molding. The two lens preparation methods have advantages and disadvantages respectively, wherein the direct method has simple operation process, low cost and high benefit, but the precision control is difficult. The indirect method can control the shape of the microlens array well, but the process is relatively complicated. Among them, a fabrication method based on a thermal reflow and dry etching process is widely used because it is a process capable of mass-producing microlens arrays with high uniformity.
To obtain a quartz microlens array on a quartz surface, we transferred the photoresist spherical cap pattern precisely onto the quartz surface by inductively coupled plasma enhanced (ICPRIE) device etching. The photoresist pattern needs to be completely transferred to the substrate pattern, so that the etching time is long, and can reach dozens of minutes or even hours according to the size of the lens and the height of the crown. The temperature of the substrate is increased along with the bombardment effect of the plasma in the etching process, so that the surface of the photoresist is carbonized, and the quality of the etched surface of the quartz is influenced. The invention adopts the plasma circulation etching technology, namely, the etching is suspended for a plurality of seconds after each 60 seconds, so that the heat accumulated by the substrate is cooled in time, and the photoresist carbonization phenomenon is effectively avoided.
At present, no relevant reports on the preparation of the quartz micro-lens based on the circular etching process are seen at home and abroad. Other microlens arrays using dry etching may also use the same cyclic etching method.
Disclosure of Invention
Aiming at the defects in the prior art, the invention aims to provide a quartz micro-lens preparation method based on a cyclic etching process and a quartz micro-lens.
The invention provides a quartz micro-lens preparation method based on a cyclic etching process, which comprises the following steps:
and (3) photoetching: preparing a photoresist cylinder on the surface of quartz;
hot melting: carrying out hot melting treatment on the quartz surface with the photoresist cylinder to convert the photoresist cylinder into a photoresist lens;
etching: and carrying out circular etching treatment on the photoresist lens body on the quartz surface until the photoresist completely disappears, thereby obtaining the quartz micro-lens array.
Preferably, the photolithography step employs: and preparing a photoresist cylinder on the surface of the quartz by adopting a photoetching exposure process.
Preferably, the photoresist column has a diameter of 10 to 400 μm and a height of 2 to 10 μm.
Preferably, the hot-melting step employs: the quartz with the photoresist column is placed on a hot plate, and after hot melting treatment at a preset temperature for a preset time, the cylindrical photoresist column is changed into a spherical crown type micro lens shape.
Preferably, the hot melting temperature is 150-180 ℃, and the hot melting time is 5-10 min.
Preferably, the etching step employs: the method adopts an inductively coupled plasma enhanced etching system, adjusts parameters including etching gas flow, ICP power, RF power, gas pressure and temperature, and ensures complete etching of the photoresist by controlling etching time.
Preferably, the etching gas is CHF 3 And CF 4 。
Preferably, when the etching gas is CHF 3 And CF 4 When the total flow rate is 25sccm, the ICP power is 600-800W, the RF power is 150-300W, and the etching chamberThe chamber pressure is 0.4-0.6 Pa, and the temperature is set to 5 ℃.
Preferably, the photoresist lens body is etched by adopting a circular etching method which is suspended for 30-60 s every etching 60s until the photoresist completely disappears, so that the transfer from the photoresist lens to the quartz lens is realized.
According to the quartz micro-lens provided by the invention, the quartz micro-lens is prepared by adopting the quartz micro-lens preparation method based on the cyclic etching process.
Compared with the prior art, the invention has the following beneficial effects:
1. the invention adopts the plasma circulation etching technology, namely the etching is suspended for a plurality of seconds after each 60 seconds, so that the heat accumulated by the substrate is cooled in time, and the substrate is ensured to be in a relatively constant temperature range;
2. the invention adopts the cycle etching technology to avoid the phenomenon of photoresist carbonization caused by temperature rise caused by heat accumulation on the surface of the substrate and influence the accurate transfer of the photoresist lens to the quartz substrate; on the other hand, the change of the surface temperature of the substrate has direct influence on the etching uniformity and the repeatability of the etching rate, thereby influencing the consistency and the uniformity of the quartz lens;
3. the invention eliminates the technical characteristics of heat accumulation on the surface of the substrate in time through the circular etching process, improves the etching process capability and prepares the high-quality quartz micro-lens;
4. the shape of the photoresist lens is accurately controlled by controlling the hot melting temperature and the hot melting time, and the transfer of the photoresist lens to the quartz substrate is controlled by etching process parameters.
Drawings
Other features, objects and advantages of the invention will become more apparent upon reading of the detailed description of non-limiting embodiments with reference to the following drawings:
FIG. 1 is a flow chart of a method for fabricating a quartz microlens.
FIG. 2 is a diagram of a process for fabricating a quartz microlens.
FIG. 3 is a cross-sectional profile of a resist lens having a diameter of 60 μm measured by a step profiler.
FIG. 4 is a surface topography diagram etched after etching for 30min by the conventional etching process and the circular etching method.
FIG. 5 is a SEM topography of a quartz microlens based on a cyclic etching method.
Detailed Description
The present invention will be described in detail with reference to specific examples. The following examples will assist those skilled in the art in further understanding the invention, but are not intended to limit the invention in any way. It should be noted that it would be obvious to those skilled in the art that various changes and modifications can be made without departing from the spirit of the invention. All falling within the scope of the present invention.
The invention mainly aims to provide a method for preparing a quartz micro-lens based on a plasma circulating etching technology, which mainly solves the problem of the surface quality of the micro-lens. In order to realize the purpose, the invention firstly adopts the conventional photoetching process to prepare a photoresist cylinder on the surface of quartz; then, heating the photoresist into a fluid capable of flowing through a hot melting process, and converting the cylindrical colloid into a spherical crown-shaped micro-lens pattern under the action of surface tension; and finally, precisely transferring the photoresist lens to the surface of the quartz through plasma circular etching.
Example 1
According to the quartz micro-lens preparation method based on the cyclic etching process, as shown in fig. 1-2, the method comprises the following steps: the quartz micro-lens array with high surface quality is prepared by adopting a process combining hot melting and circular etching. The main process steps are as follows:
and (3) photoetching step: preparing a photoresist cylinder with the diameter of 10-400 mu m and the height of 2-10 mu m by adopting a conventional photoetching exposure process;
hot melting: placing the sample on a hot plate, and converting the cylindrical colloid into a spherical-crown-shaped micro-lens pattern by controlling the temperature and time; the hot melting temperature is 150-180 ℃, and the hot melting time is 5-10 min;
and (3) dry etching: adopts an inductively coupled plasma enhanced etching system to adjust the flow of etching gas,ICP power, RF power, gas pressure and other parameters, and the complete etching of the photoresist is ensured by controlling the etching time. Wherein the etching gas is CHF 3 And CF 4 The total flow rate is 25sccm, the ICP power is 600-800W, the RF power is 150-300W, the pressure of the etching chamber is 0.4-0.6 Pa, and the temperature is set to be 5 ℃. And (3) adopting a circulating etching method, namely pausing for 30-60 s every etching 60s until the photoresist is completely consumed, and realizing the transfer from the photoresist lens to the quartz lens.
According to the quartz micro-lens provided by the invention, the quartz micro-lens is prepared by adopting the quartz micro-lens preparation method based on the cyclic etching process.
Example 2
Example 2 is a preferred example of example 1
The invention provides a quartz micro-lens preparation method based on a cyclic etching process, which comprises the following steps:
and (3) photoetching step: a uniform layer of photoresist (AZ 4330, merk) was coated on the substrate with a spin coater. After pre-baking on a hot plate, carrying out ultraviolet exposure on a photoetching machine (MA 6, karl Suss), and developing to form a corresponding photoresist cylinder with the diameter of 60 μm and the height of 2.9 μm;
hot melting: placing an experimental sample on a hot plate with a temperature rise program, and strictly controlling the hot melting time; wherein the heating rate is 15 ℃/min, and the cooling process is natural cooling. The hot melting temperature is 170 ℃, and the heat preservation time is 5min. FIG. 3 is a cross-sectional profile of a 60 μm diameter photoresist cylinder measured by a step profiler after heat fusion. The height of the photoresist lens crown is 3.6 μm, and the diameter is 60.6 μm;
an etching step: and putting the photoresist lens subjected to hot melting into a plasma dry etching system. Selection of CF 4 And CHF 3 As etching gases, the gas flow rates were all 12.5sccm, the ICP power was 700W, the RF power was 200W, the etching chamber pressure was 0.5Pa, and the temperature was set to 5 ℃. And (4) adopting a cycle etching method, namely pausing for 40s every 60s to etch so that the heat accumulated by the substrate is dissipated in time until the photoresist is completely consumed, and etching for 55 cycles in total.
FIG. 4 is a photomicrograph (note: not completely etched) of a 60 μm diameter photoresist after 30min of etching. Fig. 4 (a) is a photomicrograph of a conventional etching process, from which it can be seen that the photoresist has significantly undergone blackening by carbonization, while the etched quartz surface has significant defects. Fig. 4 (b) is a photomicrograph after 30 cycles of etching (cumulative etching for 30 min) by using the cyclic etching process, and it can be seen from the photomicrograph that the photoresist is not obviously changed and the quartz etching surface has no obvious defects. FIG. 5 is SEM image of quartz lens with diameter of 60 μm. As can be seen from the figure, the quartz lens surface has no obvious defects, and the lens size consistency is good.
The foregoing description of specific embodiments of the present invention has been presented. It is to be understood that the present invention is not limited to the specific embodiments described above, and that various changes or modifications may be made by one skilled in the art within the scope of the appended claims without departing from the spirit of the invention. The embodiments and features of the embodiments of the present application may be combined with each other arbitrarily without conflict.
Claims (10)
1. A quartz micro-lens preparation method based on a cyclic etching process is characterized by comprising the following steps:
and (3) photoetching step: preparing a photoresist cylinder on the surface of quartz;
hot melting: carrying out hot melting treatment on the quartz surface with the photoresist cylinder to convert the photoresist cylinder into a photoresist lens body;
etching: and carrying out circular etching treatment on the photoresist lens body on the quartz surface until the photoresist completely disappears, thereby obtaining the quartz micro-lens array.
2. The method for preparing the quartz micro-lens based on the cyclic etching process as claimed in claim 1, wherein the photolithography step employs: and preparing a photoresist cylinder on the surface of the quartz by adopting a photoetching exposure process.
3. The method for preparing a quartz microlens based on a cycle etching process as claimed in claim 1, wherein the photoresist column has a diameter of 10-400 μm and a height of 2-10 μm.
4. The method for preparing the quartz micro-lens based on the circular etching process as claimed in claim 1, wherein the hot melting step adopts: the quartz with the photoresist column is placed on a hot plate, and after hot melting treatment at a preset temperature for a preset time, the cylindrical photoresist column is changed into a spherical crown type micro lens shape.
5. The method for preparing the quartz micro-lens based on the circular etching process as claimed in claim 4, wherein the hot melting temperature is 150-180 ℃ and the hot melting time is 5-10 min.
6. The quartz microlens preparation method based on the cyclic etching process as claimed in claim 1, wherein the etching step employs: an inductively coupled plasma enhanced etching system is adopted, parameters including etching gas flow, ICP power, RF power, air pressure and temperature are adjusted, and complete etching of the photoresist is ensured by controlling etching time.
7. The method of claim 6, wherein the etching gas is CHF 3 And CF 4 。
8. The method of claim 7, wherein when the etching gas is CHF, the method further comprises etching the quartz microlens with a gas containing a noble metal such as argon or argon 3 And CF 4 When the total flow is 25sccm, the ICP power is 600-800W, the RF power is 150-300W, the pressure of the etching chamber is 0.4-0.6 Pa, and the temperature is set to be 5 ℃.
9. The method for preparing the quartz micro-lens based on the cyclic etching process as claimed in claim 1, wherein the cyclic etching method of pausing for 30-60 s every etching 60s is adopted to etch the photoresist lens body until the photoresist completely disappears, so as to realize the transfer from the photoresist lens to the quartz lens.
10. A quartz microlens, characterized in that it is prepared by the method for preparing a quartz microlens based on a cycle etching process according to any one of claims 1 to 9.
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| Application Number | Priority Date | Filing Date | Title |
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| CN202210994615.5A CN115343788B (en) | 2022-08-18 | 2022-08-18 | Quartz micro-lens preparation method based on cyclic etching process and quartz micro-lens |
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| CN202210994615.5A CN115343788B (en) | 2022-08-18 | 2022-08-18 | Quartz micro-lens preparation method based on cyclic etching process and quartz micro-lens |
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20110108956A1 (en) * | 2009-11-09 | 2011-05-12 | 3M Innovative Properties Company | Etching process for semiconductors |
| US20120238040A1 (en) * | 2011-03-16 | 2012-09-20 | Tokyo Electron Limited | Plasma etching apparatus and plasma etching method |
| CN105372726A (en) * | 2015-12-14 | 2016-03-02 | 中山大学 | Diamond micro lens array and preparation method thereof |
| CN113703081A (en) * | 2021-07-30 | 2021-11-26 | 苏州光舵微纳科技股份有限公司 | Method for manufacturing micro-lens array structure |
| CN217062015U (en) * | 2022-03-10 | 2022-07-26 | 重庆康佳光电技术研究院有限公司 | Etching cooling structure and plasma etching device |
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- 2022-08-18 CN CN202210994615.5A patent/CN115343788B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20110108956A1 (en) * | 2009-11-09 | 2011-05-12 | 3M Innovative Properties Company | Etching process for semiconductors |
| US20120238040A1 (en) * | 2011-03-16 | 2012-09-20 | Tokyo Electron Limited | Plasma etching apparatus and plasma etching method |
| CN105372726A (en) * | 2015-12-14 | 2016-03-02 | 中山大学 | Diamond micro lens array and preparation method thereof |
| CN113703081A (en) * | 2021-07-30 | 2021-11-26 | 苏州光舵微纳科技股份有限公司 | Method for manufacturing micro-lens array structure |
| CN217062015U (en) * | 2022-03-10 | 2022-07-26 | 重庆康佳光电技术研究院有限公司 | Etching cooling structure and plasma etching device |
Non-Patent Citations (1)
| Title |
|---|
| 张畅达等: "硅基非球面柱面微透镜阵列制备方法", 红外与激光工程, vol. 51, no. 7, pages 6 - 8 * |
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