CN115319639A - Polishing apparatus, polishing method, and silicon wafer - Google Patents
Polishing apparatus, polishing method, and silicon wafer Download PDFInfo
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- CN115319639A CN115319639A CN202211160821.2A CN202211160821A CN115319639A CN 115319639 A CN115319639 A CN 115319639A CN 202211160821 A CN202211160821 A CN 202211160821A CN 115319639 A CN115319639 A CN 115319639A
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- silicon wafer
- grinding
- protective layer
- static pressure
- pressure support
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 150
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 145
- 239000010703 silicon Substances 0.000 title claims abstract description 145
- 238000000034 method Methods 0.000 title claims abstract description 27
- 238000005498 polishing Methods 0.000 title claims description 18
- 230000003068 static effect Effects 0.000 claims abstract description 65
- 239000011241 protective layer Substances 0.000 claims abstract description 58
- 239000011248 coating agent Substances 0.000 claims abstract description 32
- 238000000576 coating method Methods 0.000 claims abstract description 32
- 230000002706 hydrostatic effect Effects 0.000 claims abstract description 10
- 238000001179 sorption measurement Methods 0.000 claims abstract description 10
- 239000012188 paraffin wax Substances 0.000 claims description 20
- 238000004140 cleaning Methods 0.000 claims description 8
- 239000012178 vegetable wax Substances 0.000 claims description 8
- 238000001816 cooling Methods 0.000 claims description 7
- 238000011084 recovery Methods 0.000 claims description 6
- 238000005507 spraying Methods 0.000 claims description 6
- 229940057995 liquid paraffin Drugs 0.000 claims description 4
- 230000005484 gravity Effects 0.000 claims description 3
- 239000010410 layer Substances 0.000 claims description 3
- 230000015572 biosynthetic process Effects 0.000 claims description 2
- 238000010438 heat treatment Methods 0.000 claims 1
- 238000002360 preparation method Methods 0.000 claims 1
- 235000012431 wafers Nutrition 0.000 description 116
- 239000012535 impurity Substances 0.000 description 6
- 239000002245 particle Substances 0.000 description 5
- 239000011863 silicon-based powder Substances 0.000 description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 5
- 238000005520 cutting process Methods 0.000 description 4
- 238000011109 contamination Methods 0.000 description 3
- 239000012530 fluid Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 239000007788 liquid Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000007921 spray Substances 0.000 description 2
- 230000002411 adverse Effects 0.000 description 1
- 230000001680 brushing effect Effects 0.000 description 1
- 239000004203 carnauba wax Substances 0.000 description 1
- 235000013869 carnauba wax Nutrition 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 239000004570 mortar (masonry) Substances 0.000 description 1
- 238000004064 recycling Methods 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Images
Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/27—Work carriers
- B24B37/28—Work carriers for double side lapping of plane surfaces
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B27/00—Other grinding machines or devices
- B24B27/0076—Other grinding machines or devices grinding machines comprising two or more grinding tools
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/34—Accessories
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
The embodiment of the invention discloses a grinding device, a grinding method and a silicon wafer, wherein the grinding device is used for grinding the two sides of the silicon wafer, and comprises: two static pressure support members oppositely arranged at two sides of the silicon wafer, wherein the static pressure support members are used for supporting the silicon wafer in a non-contact mode by providing hydrostatic pressure; two grinding wheels which are arranged oppositely and are respectively used for grinding two main surfaces of the silicon wafer; the two major surfaces include a first major surface and a second major surface; the grinding device also comprises a coating module, wherein the coating module is used for coating a protective layer on the first main surface of the ground silicon wafer; wherein the silicon wafer is abutted against a static pressure support opposite to the protective layer via the protective layer on the first main surface and supported by a negative pressure provided by the static pressure support, so that a robot arm can perform vacuum adsorption on the second main surface of the silicon wafer to pick up the silicon wafer.
Description
Technical Field
The invention relates to the technical field of semiconductor production, in particular to a grinding device, a grinding method and a silicon wafer.
Background
In a semiconductor processing process, a drawn silicon rod needs to be cut into silicon wafers through a cutting process, and the thickness of the silicon wafers obtained through the cutting process is generally set to leave a processing margin for a subsequent process. In order to remove mechanical damage to the surface of the silicon wafer caused by a cutting tool and mortar in the cutting process and achieve the purposes of effectively thinning the silicon wafer and controlling the surface flatness subsequently, a double-sided grinding processing technology is used, namely grinding the surface of the silicon wafer in equal proportion by using a grinding wheel made of diamond, for example, so as to remove a surface damage layer and thin the silicon wafer.
The double-side grinding equipment mainly adopts two grinding modes: the silicon wafer grinding method comprises a horizontal grinding mode and a vertical grinding mode, wherein in a double-sided grinding device adopting the horizontal grinding mode, a silicon wafer is horizontally arranged on a grinding table with high flatness, a grinding wheel grinds the silicon wafer from top to bottom, and after the single-sided processing is finished, the silicon wafer is turned over to grind the other side; in a double-side grinding apparatus adopting a vertical grinding mode, a silicon wafer is supported by a material carrying ring and erected in the double-side grinding apparatus, and two grinding wheels are oppositely arranged on two sides of the silicon wafer so as to feed from the two sides to grind the two sides of the silicon wafer simultaneously.
At present, for a double-sided grinding device adopting a vertical grinding mode, the surface of a static pressure support member is polluted in the grinding process, so that impurities such as grinding wheel scraps, silicon powder particles and the like are attached to the surface of the static pressure support member, and therefore when the surface of the static pressure support member is in contact with the surface of a silicon wafer, the surface of the silicon wafer is damaged, and the surface quality of the silicon wafer is affected.
Disclosure of Invention
In order to solve the above technical problems, embodiments of the present invention desirably provide a polishing apparatus, a polishing method, and a silicon wafer.
The technical scheme of the invention is realized as follows:
in a first aspect, an embodiment of the present invention provides a polishing apparatus, where the polishing apparatus is configured to perform double-sided polishing on a silicon wafer, and the polishing apparatus includes:
two static pressure support members oppositely arranged at two sides of the silicon chip, wherein the static pressure support members are used for supporting the silicon chip in a non-contact mode by providing hydrostatic pressure;
two grinding wheels which are arranged oppositely and are respectively used for grinding two main surfaces of the silicon wafer;
wherein,
the two major surfaces include a first major surface and a second major surface;
the grinding device also comprises a coating module, wherein the coating module is used for coating a protective layer on the first main surface of the ground silicon wafer;
wherein the silicon wafer is abutted against a static pressure support opposite to the protective layer through the protective layer on the first main surface and supported by a negative pressure provided by the static pressure support, so that a robot can perform vacuum adsorption on the second main surface of the silicon wafer to pick up the silicon wafer.
In a second aspect, an embodiment of the present invention provides a grinding method performed by using the grinding apparatus according to the first aspect, the grinding method including:
providing hydrostatic pressure by two static pressure support members oppositely arranged at two sides of the silicon wafer to support the silicon wafer in a non-contact mode;
respectively grinding two main surfaces of the silicon wafer by two grinding wheels which are oppositely arranged;
coating a protective layer on a first main surface of two main surfaces of the grinded silicon wafer through a coating module;
and abutting the silicon wafer against a static pressure support opposite to the protective layer through the protective layer on the first main surface and supporting the silicon wafer through negative pressure provided by the static pressure support, so that the mechanical arm can realize vacuum adsorption on the second main surface of the silicon wafer to pick up the silicon wafer.
In a third aspect, embodiments of the present invention provide a silicon wafer manufactured by using the polishing apparatus according to the first aspect.
The embodiment of the invention provides a grinding device, a grinding method and a silicon wafer; the grinding device is provided with a coating module for coating a protective layer on one main surface of a ground silicon wafer, when the manipulator needs to pick up the silicon wafer to remove the silicon wafer from a current station, the protective layer on the main surface of the silicon wafer can directly abut against a static pressure support piece opposite to the protective layer and support the silicon wafer through negative pressure provided by the static pressure support piece, and at the moment, the manipulator can carry out vacuum adsorption on the other main surface of the silicon wafer to pick up the silicon wafer; compared with the conventional grinding device, the grinding device provided by the embodiment of the invention avoids the direct contact between the ground silicon wafer surface and the static pressure support member, so that the static pressure support member and impurities such as grinding wheel scraps, silicon powder particles and the like attached to the static pressure support member during the execution of the previous process can be prevented from damaging the silicon wafer surface, and the quality of the finally obtained silicon wafer is improved.
Drawings
FIG. 1 shows a schematic view of a conventional grinding apparatus;
FIG. 2 shows another schematic view of a conventional grinding apparatus;
FIG. 3 shows a schematic view of a grinding apparatus provided by an embodiment of the present invention;
FIG. 4 shows another schematic view of a grinding apparatus provided by an embodiment of the present invention;
FIG. 5 shows a schematic view of a grinding apparatus provided by another embodiment of the present invention;
FIG. 6 shows a schematic view of a grinding apparatus provided by yet another embodiment of the present invention;
FIG. 7 shows a schematic view of a grinding apparatus provided by a further embodiment of the invention;
fig. 8 shows a flow chart of a grinding method provided by an embodiment of the invention.
Detailed Description
The technical solution in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention.
Referring to fig. 1 and 2, fig. 1 and 2 show a conventional grinding apparatus 1, the grinding apparatus 1 includes a carrier ring 11 for carrying a silicon wafer S, a first static pressure support member 12, a second static pressure support member 13, a first grinding wheel 14, and a second grinding wheel 15, during grinding of the silicon wafer S, a robot R adsorbs the silicon wafer S to load it into the carrier ring 11 of the grinding apparatus 1, the first static pressure support member 12 and the second static pressure support member 13 located at the left and right sides of the carrier ring 11 are brought close to the silicon wafer S, and then the first grinding wheel 14 and the second grinding wheel 15 located at the left and right sides of the carrier ring 11 pass through holes in the first static pressure support member 12 and the second static pressure support member 13, respectively, to double-side grind the silicon wafer S, after grinding is completed, the first static pressure support member 12 adsorbs one main surface of the ground silicon wafer S by vacuum to maintain it in a vertical position, the robot R extends into the grinding apparatus 1 from above and releases the static pressure support member 12 by adsorbing the silicon wafer S against the other main surface of the first static pressure support member 12, so that the first static pressure support member R is separated from the first static pressure support member 12 in a vertical direction. However, during the grinding process, due to the high-speed rotation of the grinding wheel, grinding wheel chips, silicon powder particles, and the like will splash with the grinding fluid on the static pressure support members, and therefore during the adsorption process of the first static pressure support member 12 on the silicon wafer S, the wheel chips, silicon powder particles, and the like existing on the surface of the first static pressure support member 12 facing the silicon wafer S when the first static pressure support member 12 is in contact with the silicon wafer S may damage the surface of the silicon wafer S, affecting the surface quality of the silicon wafer.
In order to solve the above problem, referring to fig. 3, an embodiment of the present invention provides a polishing apparatus 10, where the polishing apparatus 10 is used for performing double-sided polishing on a silicon wafer S, and the polishing apparatus 10 includes:
two static pressure support members 12, 13 oppositely arranged at both sides of the silicon wafer S, the static pressure support members 12, 13 being used for supporting the silicon wafer S in a non-contact manner by supplying hydrostatic pressure;
two grinding wheels 14 and 15 arranged oppositely, wherein the two grinding wheels 14 and 15 are respectively used for grinding two main surfaces S1 and S2 of the silicon wafer S;
wherein,
the two major surfaces comprise a first major surface S1 and a second major surface S2;
the grinding device 10 further comprises a coating module 16, wherein the coating module 16 is used for coating a protective layer P on the first main surface S1 of the ground silicon wafer S;
wherein the silicon wafer S abuts against a static pressure support opposite to the protective layer P via the protective layer P on the first main surface S1 and is supported by a negative pressure provided by the static pressure support, so that the robot arm R can perform vacuum adsorption on the second main surface of the silicon wafer to pick up the silicon wafer.
Specifically, as shown in fig. 3, the grinding apparatus 10 includes a first static pressure support 12, a second static pressure support 13, a first grinding wheel 14, and a second grinding wheel 15, the first static pressure support 12 and the first grinding wheel 14 being disposed facing a first main surface S1 of the silicon wafer S, the second static pressure support 13 and the second grinding wheel 15 being disposed facing a second main surface S2 of the silicon wafer S, and hydrostatic pressures being respectively supplied to the silicon wafer S by the two static pressure supports to support the silicon wafer S while the two grinding wheels grind the two main surfaces of the silicon wafer S, respectively, and the grinding wheels and the static pressure supports are stopped after the grinding operation of the grinding wheels is completed, in which case the silicon wafer S may be adhered to the second grinding wheel 15 via the second main surface S2 by means of fluid tension of the grinding fluid or may be adhered by means of the carrier ring C, so that the silicon wafer S continues to stand upright in the grinding apparatus 10 while at least the first main surface S1 thereof is exposed, and subsequently the first main surface S1 of the silicon wafer S may be coated with a protective layer by the coating module 16, the coating module 16 may be coated by brushing, spraying or the like, depending on the protective layer material actually used, and accordingly, the coating module 16 may include a brush, a shower head or the like, and after the protective layer is formed on the first main surface S1 by the material to be coated, the first static pressure support 12 may be brought close to the first main surface S1 to support the silicon wafer S by the negative pressure provided by the first static pressure support 12 and the robot R may be brought close to the second main surface S2, wherein, referring to fig. 4, when the first main surface S1 is attached to the first static pressure support 12, the first static pressure support 12 supports the silicon wafer S by providing the negative pressure, and the robot R pushes the second main surface S2 of the silicon wafer to adsorb the silicon wafer, this causes the first main surface S1 of the silicon wafer to be pressed further against the first static pressure support 1, and damage to the first main surface S1 by the first static pressure support 12 and impurities on the surface thereof can be avoided because the presence of the protective layer blocks direct contact of the first main surface S1 with the first static pressure support 12.
An embodiment of the present invention provides a grinding apparatus 10; the grinding device 10 is provided with a coating module 16 for coating a protective layer on one of the main surfaces of the ground silicon wafer, when the mechanical arm R needs to pick up the silicon wafer S to remove the silicon wafer S from the current station, as shown in FIG. 4, the protective layer on the main surface of the silicon wafer can be directly abutted against the static pressure support opposite to the protective layer and the silicon wafer is supported by the negative pressure provided by the static pressure support, and at the moment, the mechanical arm can carry out vacuum adsorption on the other main surface of the silicon wafer to realize the picking up of the silicon wafer; compared with the conventional grinding device, the grinding device 10 provided by the embodiment of the invention avoids the direct contact between the ground silicon wafer surface and the static pressure support member, thereby avoiding the damage of the static pressure support member and impurities such as grinding wheel scraps, silicon powder particles and the like attached to the static pressure support member when the previous process is carried out on the silicon wafer surface, and improving the quality of the finally obtained silicon wafer.
After the mechanical arm picks up the silicon wafer, the protective layer can be reserved according to requirements to continue to protect the surface of the silicon wafer in the subsequent working procedures; in addition, it is also possible to remove the protective layer, and in this case, preferably, referring to fig. 5, the polishing apparatus further includes a cleaning module 17 for removing the protective layer after the polished silicon wafer S is picked up by the robot arm R.
If it is necessary to remove the protective layer, the cleaning module 17 operates to remove the protective layer while the robot R holds the wafer S, so that the wafer returns to the state after the conventional grinding.
According to a preferred embodiment of the present invention, the protective layer is made of paraffin or vegetable wax, and the protective layer is a paraffin or vegetable wax layer formed by spraying liquid paraffin or vegetable wax on the first main surface through the coating module 16, and more preferably, the vegetable wax may be, for example, carnauba wax, which is less environmental-polluting and has a relatively low melting point, and is easier to remove and recycle.
The protective layer made of paraffin will be explained as an example. Since the paraffin wax changes its state by a change in temperature, and is in a liquid state when being ejected from the coating device, in order to promote its solidification so that it can form a protective layer as soon as possible, preferably, referring to fig. 6, the grinding device 10 further includes a cooling module 18 for cooling the first main surface S1 before the first main surface S1 is coated with the protective layer to promote the formation of the protective layer, the cooling module 18 being configured to cool the first main surface S1.
Specifically, as an example, the cooling module 18 may cool the first main surface S1 by spraying water or gas with a relatively low temperature to the first main surface S1, and in practical operation, for example, the cooling module 18 may spray water with a temperature of 5 to 10 degrees celsius for 5 to 15 seconds to the first main surface S1 to cool the silicon wafer S, particularly the first main surface S1 thereof, and then immediately start spraying liquid paraffin to the first main surface S1 by the coating module 16, the liquid paraffin may solidify on the silicon wafer when encountering the silicon wafer which is just cooled, and as the spraying continues, the protective layer may gradually form. The thickness of the protective layer can be set according to the actual application, for example, the thickness of the paraffin protective layer can be 2 to 3 mm.
In the case where the protective layer is composed of paraffin, the cleaning module 17 of the polishing apparatus 10 is used to heat the protective layer after the polished silicon wafer is picked up by the robot arm to melt the protective layer to flow away from the silicon wafer by gravity.
By way of example and not limitation, the cleaning module 17 may spray hot water with a temperature in the range of 70 to 80 degrees celsius for 10 to 20 seconds onto the protective layer to heat the paraffin wax to be liquid again and flow away from the wafer under gravity with the hot water to restore the wafer to a state of being just ground, without causing any damage or adverse effect on the wafer, particularly the surface of the wafer, since the paraffin wax does not react with the wafer.
In order to avoid the contamination of the grinding device by paraffin and for the sake of cost effectiveness, preferably, referring to fig. 7, the dual-mode grinding device 10 may further include a recovery module 19 for recovering paraffin, and the recovery module 19 may be disposed, for example, directly below the silicon wafer and connected to the coating module 16, so that the excess paraffin or water sprayed out or flowing down from the surface of the silicon wafer may be collected and the paraffin therein may be recycled and then conveyed to the coating module 16 again.
In order to avoid contamination of the collected paraffin by impurities mixed in the collected paraffin in the subsequent process, preferably, the recovery module 19 may include a filter 20, so that the recovery module 19 may remove the impurities in the paraffin by using the filter 20 when processing the collected paraffin to avoid contamination of products and equipment in the recycling of the paraffin.
Referring to fig. 8, an embodiment of the present invention also provides a grinding method performed by using the grinding apparatus 10 described above, the grinding method including:
s01: providing hydrostatic pressure by two hydrostatic pressure support members oppositely arranged at two sides of the silicon chip to support the silicon chip in a non-contact mode;
s02: respectively grinding two main surfaces of the silicon wafer by two grinding wheels which are oppositely arranged;
s03: coating a protective layer on a first main surface of two main surfaces of the grinded silicon wafer through a coating module;
s04: and abutting the silicon wafer against a static pressure support opposite to the protective layer through the protective layer on the first main surface and supporting the silicon wafer through negative pressure provided by the static pressure support, so that the mechanical arm can realize vacuum adsorption on the second main surface of the silicon wafer to pick up the silicon wafer.
Preferably, the grinding method further comprises: s05: and removing the protective layer through a cleaning module after the ground silicon wafer is picked up by the robot arm.
Embodiments of the present invention also provide a silicon wafer manufactured by using the grinding apparatus 10 according to the above description, which can improve the quality of the silicon wafer, particularly the surface of the silicon wafer, compared to the conventional art, because the grinding apparatus prevents the surface of the ground silicon wafer from being contaminated by the static pressure supporter.
It should be noted that: the technical schemes described in the embodiments of the present invention can be combined arbitrarily without conflict.
The above description is only for the specific embodiments of the present invention, but the scope of the present invention is not limited thereto, and any person skilled in the art can easily think of the changes or substitutions within the technical scope of the present invention, and shall cover the scope of the present invention. Therefore, the protection scope of the present invention shall be subject to the protection scope of the claims.
Claims (10)
1. A grinding apparatus for double-side grinding of a silicon wafer, comprising:
two static pressure support members oppositely arranged at two sides of the silicon wafer, wherein the two static pressure support members are used for supporting the silicon wafer in a non-contact mode by providing hydrostatic pressure;
two grinding wheels which are arranged oppositely and are respectively used for grinding two main surfaces of the silicon wafer;
it is characterized in that the preparation method is characterized in that,
the two major surfaces include a first major surface and a second major surface;
the grinding device also comprises a coating module, wherein the coating module is used for coating a protective layer on the first main surface of the ground silicon wafer;
wherein the silicon wafer is abutted against a static pressure support opposite to the protective layer via the protective layer on the first main surface and supported by a negative pressure provided by the static pressure support, so that a robot arm can perform vacuum adsorption on the second main surface of the silicon wafer to pick up the silicon wafer.
2. The abrading apparatus of claim 1, further comprising a cleaning module for removing the protective layer after the abraded silicon wafer is picked up by the robot.
3. The abrading device of claim 1, wherein the protective layer is comprised of paraffin or vegetable wax, and the protective layer is a paraffin or vegetable wax layer formed by spraying liquid paraffin or vegetable wax onto the first major surface by the coating module.
4. The abrading apparatus of claim 3, further comprising a cooling module for cooling the first major surface to facilitate formation of the protective layer prior to coating the first major surface with the protective layer.
5. The lapping apparatus of claim 3 or 4, further comprising a cleaning module for heating the protective layer after the lapped silicon wafer is picked up by the robot arm to melt the protective layer to flow away from the silicon wafer by gravity.
6. The abrading device of claim 5, further comprising a recovery module for recovering paraffin or vegetable wax.
7. The abrading apparatus of claim 6, wherein the recovery module comprises a filter.
8. A grinding method, characterized in that the grinding method is performed by using the grinding apparatus according to any one of claims 1 to 7, the grinding method comprising:
providing hydrostatic pressure by two hydrostatic pressure support members oppositely arranged at two sides of the silicon chip to support the silicon chip in a non-contact mode;
grinding two main surfaces of the silicon wafer respectively through two grinding wheels which are arranged oppositely;
coating a protective layer on a first main surface of two main surfaces of the grinded silicon wafer through a coating module;
and abutting the silicon wafer against a static pressure support opposite to the protective layer through the protective layer on the first main surface and supporting the silicon wafer through negative pressure provided by the static pressure support, so that the mechanical arm can realize vacuum adsorption on the second main surface of the silicon wafer to pick up the silicon wafer.
9. The grinding method according to claim 8, characterized in that the grinding method comprises: and removing the protective layer through a cleaning module after the grinded silicon wafer is picked up by the mechanical arm.
10. A silicon wafer, characterized in that it is manufactured by using the polishing apparatus according to any one of claims 1 to 7.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202211160821.2A CN115319639A (en) | 2022-09-22 | 2022-09-22 | Polishing apparatus, polishing method, and silicon wafer |
| TW111140603A TWI835371B (en) | 2022-09-22 | 2022-10-26 | Grinding device, grinding method and silicon wafer |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202211160821.2A CN115319639A (en) | 2022-09-22 | 2022-09-22 | Polishing apparatus, polishing method, and silicon wafer |
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| CN115319639A true CN115319639A (en) | 2022-11-11 |
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| CN202211160821.2A Pending CN115319639A (en) | 2022-09-22 | 2022-09-22 | Polishing apparatus, polishing method, and silicon wafer |
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| CN1509495A (en) * | 2002-03-14 | 2004-06-30 | ������������ʽ���� | Method for grinding rear surface of semiconductor wafer |
| JP2004214398A (en) * | 2002-12-27 | 2004-07-29 | Sumitomo Mitsubishi Silicon Corp | Method of manufacturing semiconductor wafer |
| TW200834692A (en) * | 2007-02-06 | 2008-08-16 | Powertech Technology Inc | Method for wafer-processing |
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| CN105643431A (en) * | 2014-12-02 | 2016-06-08 | 中芯国际集成电路制造(上海)有限公司 | Wafer grinding method |
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| CN110253421A (en) * | 2019-06-21 | 2019-09-20 | 苏州长瑞光电有限公司 | The thining method of Group III-V semiconductor wafer |
| JP2021129000A (en) * | 2020-02-13 | 2021-09-02 | 株式会社ディスコ | Wafer processing method |
| CN212044170U (en) * | 2020-02-18 | 2020-12-01 | 北京芯之路企业管理中心(有限合伙) | Grinding and polishing device for silicon carbide wafers |
| CN114274041A (en) * | 2021-12-24 | 2022-04-05 | 西安奕斯伟材料科技有限公司 | Double-side polishing apparatus and double-side polishing method |
| CN114770366A (en) * | 2022-05-17 | 2022-07-22 | 西安奕斯伟材料科技有限公司 | Static pressure plate of silicon wafer double-side grinding device and silicon wafer double-side grinding device |
| CN115070604A (en) * | 2022-06-09 | 2022-09-20 | 西安奕斯伟材料科技有限公司 | Double-side polishing apparatus and double-side polishing method |
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| TW202306699A (en) | 2023-02-16 |
| TWI835371B (en) | 2024-03-11 |
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