CN115315801A - 一种显示基板的制作方法 - Google Patents

一种显示基板的制作方法 Download PDF

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Publication number
CN115315801A
CN115315801A CN202180000428.4A CN202180000428A CN115315801A CN 115315801 A CN115315801 A CN 115315801A CN 202180000428 A CN202180000428 A CN 202180000428A CN 115315801 A CN115315801 A CN 115315801A
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layer
active layer
type
region
substrate
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CN202180000428.4A
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武新国
王凤国
田亮
冯宇
刘彬
王成龙
马宇轩
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BOE Technology Group Co Ltd
Ordos Yuansheng Optoelectronics Co Ltd
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BOE Technology Group Co Ltd
Ordos Yuansheng Optoelectronics Co Ltd
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Publication of CN115315801A publication Critical patent/CN115315801A/zh
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78651—Silicon transistors
    • H01L29/7866—Non-monocrystalline silicon transistors
    • H01L29/78672—Polycrystalline or microcrystalline silicon transistor
    • H01L29/78675—Polycrystalline or microcrystalline silicon transistor with normal-type structure, e.g. with top gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66742—Thin film unipolar transistors
    • H01L29/6675—Amorphous silicon or polysilicon transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
    • H01L27/0617—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type
    • H01L27/0629—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type in combination with diodes, or resistors, or capacitors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66742—Thin film unipolar transistors
    • H01L29/66772—Monocristalline silicon transistors on insulating substrates, e.g. quartz substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78651—Silicon transistors
    • H01L29/7866—Non-monocrystalline silicon transistors
    • H01L29/78672—Polycrystalline or microcrystalline silicon transistor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78696—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel

Abstract

本公开实施例公开一种显示基板的制作方法，包括：在衬底基板上形成位于NMOS晶体管区的第一有源层以及位于PMOS晶体管区的第二有源层；在第一有源层、第二有源层背离衬底基板一侧涂覆第一光刻胶层，对第一光刻胶层构图形成第一图案层，至少暴露出第一有源层两端；以第一图案层为掩膜，对第一有源层两端进行N型重掺杂；对第一图案层进行处理形成第二图案层，至少暴露出第一有源层中间区域；以第二图案层为掩膜，对第一有源层进行沟道掺杂；剥离第二图案层后，对第二有源层两端进行P型重掺杂；在第一有源层、第二有源层背离衬底基板一侧形成与N型重掺杂区电连接的第一源极和第一漏极，以及形成与P型重掺杂区电连接的第二源极和第二漏极。

Description

PCT国内申请，说明书已公开。

Claims (15)

  1. PCT国内申请，权利要求书已公开。
CN202180000428.4A 2021-03-08 2021-03-08 一种显示基板的制作方法 Pending CN115315801A (zh)

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KR100667066B1 (ko) * 2004-08-11 2007-01-10 삼성에스디아이 주식회사 박막트랜지스터 제조 방법
KR100796609B1 (ko) * 2006-08-17 2008-01-22 삼성에스디아이 주식회사 Ｃｍｏｓ 박막 트랜지스터의 제조방법
KR101496148B1 (ko) * 2008-05-15 2015-02-27 삼성전자주식회사 반도체소자 및 그 제조방법
CN103700632B (zh) * 2013-12-26 2016-04-06 京东方科技集团股份有限公司 Cmos晶体管及其制作方法、显示面板和显示装置
CN103715196B (zh) * 2013-12-27 2015-03-25 京东方科技集团股份有限公司 一种阵列基板及其制作方法、显示装置
CN103745978B (zh) * 2014-01-03 2016-08-17 京东方科技集团股份有限公司 显示装置、阵列基板及其制作方法
CN104167448B (zh) * 2014-08-05 2017-06-30 京东方科技集团股份有限公司 薄膜晶体管及其制备方法、阵列基板和显示装置
CN105185792B (zh) * 2015-09-30 2018-11-23 深圳市华星光电技术有限公司 液晶显示面板、阵列基板及其制造方法
CN105633095A (zh) * 2016-01-04 2016-06-01 京东方科技集团股份有限公司 一种阵列基板及显示面板
CN105470310A (zh) * 2016-01-21 2016-04-06 京东方科技集团股份有限公司 一种薄膜晶体管及其制作方法、阵列基板和显示装置
CN106098784A (zh) * 2016-06-13 2016-11-09 武汉华星光电技术有限公司 共平面型双栅电极氧化物薄膜晶体管及其制备方法
CN107818987B (zh) * 2016-09-14 2024-01-16 天马微电子股份有限公司 半导体装置及其制造方法和显示设备及其制造方法
CN106783871B (zh) * 2016-11-18 2019-11-08 上海天马微电子有限公司 一种阵列基板、显示面板及制作方法
CN106449667B (zh) * 2016-12-21 2017-12-22 京东方科技集团股份有限公司 阵列基板及其制作方法、显示装置
CN107768310B (zh) * 2017-10-20 2020-07-14 京东方科技集团股份有限公司 一种阵列基板的制作方法、阵列基板及指纹识别器件
CN108807442B (zh) * 2018-07-10 2020-07-24 京东方科技集团股份有限公司 图像距离传感器及其制备方法、倒车图像测距装置
CN110047800B (zh) * 2019-04-18 2021-01-15 武汉华星光电技术有限公司 阵列基板及其制备方法

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WO2022188011A1 (zh) 2022-09-15

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