CN115312620A - 一种TOPCon电池的制备方法 - Google Patents
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- 238000002360 preparation method Methods 0.000 title claims abstract description 14
- 238000000034 method Methods 0.000 claims abstract description 67
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 48
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 48
- 239000010703 silicon Substances 0.000 claims abstract description 48
- 238000000137 annealing Methods 0.000 claims abstract description 26
- 229910021417 amorphous silicon Inorganic materials 0.000 claims abstract description 25
- 238000001755 magnetron sputter deposition Methods 0.000 claims abstract description 23
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 16
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- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims abstract description 10
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims abstract description 7
- 229910052796 boron Inorganic materials 0.000 claims abstract description 7
- 238000009792 diffusion process Methods 0.000 claims abstract description 6
- 238000002791 soaking Methods 0.000 claims abstract description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 5
- 229910052814 silicon oxide Inorganic materials 0.000 claims abstract description 5
- 238000000151 deposition Methods 0.000 claims abstract description 3
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 claims description 33
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 26
- 238000004544 sputter deposition Methods 0.000 claims description 20
- 239000007789 gas Substances 0.000 claims description 15
- 229910052786 argon Inorganic materials 0.000 claims description 13
- 229910000073 phosphorus hydride Inorganic materials 0.000 claims description 12
- 238000004519 manufacturing process Methods 0.000 claims description 4
- 238000010438 heat treatment Methods 0.000 claims description 3
- 239000013077 target material Substances 0.000 claims description 3
- 238000005286 illumination Methods 0.000 claims description 2
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- 230000005641 tunneling Effects 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 229920005591 polysilicon Polymers 0.000 description 3
- 238000005086 pumping Methods 0.000 description 3
- MWUXSHHQAYIFBG-UHFFFAOYSA-N Nitric oxide Chemical compound O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005265 energy consumption Methods 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 238000004151 rapid thermal annealing Methods 0.000 description 2
- 238000005215 recombination Methods 0.000 description 2
- 230000006798 recombination Effects 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000007664 blowing Methods 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000003085 diluting agent Substances 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 238000005289 physical deposition Methods 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 238000005546 reactive sputtering Methods 0.000 description 1
- 238000005477 sputtering target Methods 0.000 description 1
- 238000010301 surface-oxidation reaction Methods 0.000 description 1
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Abstract
本发明公开了一种TOPCon电池的制备方法，S1,在制绒后的硅片正面进行硼掺杂，形成制绒硼掺杂扩散面；S2，将步骤S1中所得的硅片放入含有氢氟酸溶液中浸泡，除去表面的自然氧化层；S3,在步骤S2中所得硅片的背面制备超薄氧化硅层；S4,在步骤S3中所得硅片的背面制备非晶硅层；S5,沉积所得硅片的非晶硅层后进行快速退火处理，将非晶硅层退火形成多晶硅层，组装得到所述TOPCon电池。本发明用紫外臭氧处理法结合磁控溅射法制备超薄氧化层和非晶硅层，后续进行快速退火，将非晶硅层退火形成多晶硅层，能够低成本高效的制备TOPCon电池。
Description
技术领域
本发明属于太阳能电池技术领域，涉及一种TOPCon电池的制备方法。
背景技术
隧穿氧化层钝化接触太阳电池(tunnel oxide passivated contact solarcell)是一种高效晶硅太阳电池，该电池基于载流子选择性收集钝化接触结构，通过在电池背面制备由隧穿氧化硅层和重掺杂多晶硅硅薄膜良好的钝化效果使得硅片表面能带产生弯曲从而形成钝化效果。TOPCon(Tunnel Oxide Passivated Contact，隧穿氧化层钝化接触)电有效降低表面复合和金属接触复合，提升了电池的开路电压和短路电流。
现有工艺中隧穿氧化层的形成常见的方法有等离子体化学气相沉积(PECVD)、硝酸氧化硅片法(NAOS)法、过氧化氢法、热氧化法、阳极氧化法。硝酸氧化法、过氧化氢法等需要化学溶液形成氧化层的方法需要较多时间，并且增加了清洗处理硅片的步骤，化学溶液也对环境造成污染较大。等离子体化学气相沉积需要昂贵的设备，并且和热氧化法一样需要消耗大量的能量。重掺多晶硅层的工艺通常是低压化学气相沉积、等离子化学气相沉积和物理气相沉积，但是低压化学气相沉积容易形成绕镀，等离子体化学气相沉积在退火时容易产生气泡现象，导致薄膜质量下降。现有磁控溅射法溅射硅靶沉积硅薄膜后，需后续持续一段时间的扩散退火，制备时间长，不利于生产。因此，提供一种TOPCon电池的制备方法。
发明内容
为了克服现有技术中的缺陷，提供一种TOPCon电池的制备方法。
本发明通过下述方案实现：
一种TOPCon电池的制备方法，包括如下步骤：
S1,在制绒后的硅片正面进行硼掺杂，形成制绒硼掺杂扩散面；
S2，将步骤S1中所得的硅片放入含有氢氟酸溶液中浸泡，除去表面的自然氧化层；
S3,在步骤S2中所得硅片的背面制备超薄氧化硅层；
S4,在步骤S3中所得硅片的背面制备非晶硅层；
S5,沉积所得硅片的非晶硅层后进行快速退火处理，将非晶硅层退火形成多晶硅层，组装得到所述TOPCon电池。
所述步骤S2中，氢氟酸溶液的质量浓度为1％～5％，浸泡的时间为0.5～3min。
在所述步骤S3中包括利用紫外臭氧处理法在步骤S2中所得硅片的背面制备所述超薄氧化硅层。
所述紫外臭氧处理法包括将步骤S2中硅片的背面朝向紫外灯光源，光照处理时间为3-10min。
硅片的背面与紫外灯光源之间的距离为0.5-2cm。
在所述步骤S4中包括利用磁控溅射法在步骤S3中所得硅片的背面制备所述非晶硅层。
所述磁控溅射法的电源包括直流电源或交流射频电源中的任一种，所述磁控溅射法所用的靶材为高纯硅靶，所述磁控溅射法利用磷烷气体为掺杂源，磷烷特气瓶包括含量为1％的磷烷气体和99％的氩气，溅射时1％磷烷气体的流量为1-6sccm。
所述磁控溅射法的电源为直流电源时，功率为5-100w，溅射工艺气压为0.5-2Pa，溅射时间为5-30min，非晶硅层的厚度为30-120nm。
所述磁控溅射法的电源为交流射频电源时，功率为25w-250w，溅射工艺气压为2pa-5pa，溅射时间为2-15min，非晶硅层的厚度为50-150nm。
所述步骤S5中退火温度为1000-1100度，温度保持时间为80-100s，升温速率为9-10度每秒。
本发明方法的有益效果为：
一种TOPCon电池的制备方法采用紫外臭氧处理法在硅片的背面形成超薄氧化层，所需时间短，工艺简单，污染和能量消耗均较小；反应溅射后不需要扩散退火进行掺杂，快速退火也可激活杂质形成多晶硅，降低制备时间；结合紫外臭氧处理法、磁控溅射法和快速退火，形成完整的工艺链路，可大批量短时间制备。
具体实施方式
下面结合具体实施例对本发明进一步说明：
以下实例所使用的硅片为厚度为100-150um、正面制绒重掺硼扩散，背面光滑线切割，TOPCon薄膜即掺杂元素激活的多晶硅层沉积在背面，使用前先使用标准RCA溶液清洗，氮气枪吹扫备用，保证硅片足够清洁。
实施例1
S1,在制绒后的硅片正面进行硼掺杂，形成制绒硼掺杂扩散面；
S2，将步骤S1中所得的硅片放于2％的稀释的氢氟酸溶液中浸泡2min，去除自然表面氧化层，氮气枪吹扫备用；
S3，将步骤S2处理的硅片放于紫外臭氧清洗机中，背面朝向光源，硅片离灯源2cm，照射时间为6min；
S4，将步骤3背面含有超薄氧化层的硅片放入磁控溅射工艺室内，接着进行抽真空，直到真空度低于1×10-5Pa，通入氩气和磷烷，氩气流量在5sccm，1％的磷烷流量在2sccm，调整高阀，靶使得工艺气压为1.1Pa，选用磷烷时，溅射靶材可为高纯n型硅。气压稳定之后，打开直流电源，功率选为27w，溅射时间23min，非晶硅层薄膜厚度51nm；
S4中的磁控溅射掺杂源为磷烷，磷烷特气瓶中磷烷气体含量为1％，其余为惰性气体氩气，可以再用纯氩稀释特气，以获得不同程度的掺杂。溅射时1％磷烷气体的流量可为1-6sccm，稀释气体纯氩气流量可为0-10sccm。
本发明可根据溅射功率的不同，调整溅射时间，功率越小溅射时间越长，时间为5min-30min，以获得基本一致的溅射厚度。
S5,将步骤4得到带有溅射非晶硅层的硅片进行快速退火处理，放到RTP快退炉中，快退炉设置70s升温至1050度持续90s，期间快退炉通入氮气进行保护，将非晶硅层退火形成多晶硅层，多晶硅层的厚度为43nm，组装得到所述TOPCon电池。
S5中非晶硅层需通过退火处理才能获得多晶硅层，同时对掺杂元素进行激活。退火工艺采用快速热退火处理，快速热退火工艺时，退火持续时间短，退火温度偏高，退火温度为1050度左右，退火持续时间为90s。退火时需通入惰性气体进行保护。
实施例2
在本实施例中，与实施例1中的相同之处不再赘述，不同之处在于，S4，将步骤3背面含有超薄氧化层的硅片放入磁控溅射工艺室内，接着进行抽真空，直到真空度低于1×10-5Pa，通入氩气和磷烷，氩气流量在5sccm，1％的磷烷流量在2sccm，调整高阀，靶使得工艺气压为1.1Pa，气压稳定之后，打开直流电源，功率选为50w，溅射时间18min，非晶硅层薄膜厚度62nm，多晶硅层的厚度为54nm。
实施例3
在本实施例中，与实施例1中的相同之处不再赘述，不同之处在于，S4，将步骤3背面含有超薄氧化层的硅片放入磁控溅射工艺室内，接着进行抽真空，直到真空度低于1×10-5Pa，通入氩气和磷烷，氩气流量在5sccm，1％的磷烷流量在2sccm，调整高阀，靶使得工艺气压为3Pa，气压稳定之后，打开交流射频电源，功率选为74w，溅射时间11min，非晶硅层薄膜厚度55nm，多晶硅层的厚度为39nm.
实施例4
在本实施例中，与实施例1中的相同之处不再赘述，不同之处在于，S4，将步骤3背面含有超薄氧化层的硅片放入磁控溅射工艺室内，接着进行抽真空，直到真空度低于1×10-5Pa，通入氩气和磷烷，氩气流量在5sccm，1％的磷烷流量在2sccm，调整高阀，靶使得工艺气压为3Pa，气压稳定之后，打开交流射频电源，功率选为115w，溅射时间7min，非晶硅层薄膜厚度71nm，多晶硅层的厚度为56nm。
通过对比实施例可知，本发明实施例提供的TOPCon电池的制备方法，能够快速的在硅片的背面形成掺杂元素激活的多晶硅层，有助于提高TOPCon电池的生产效率。
本发明的紫外臭氧处理法只需将硅片放于紫外臭氧清洗器即可完成超薄隧穿氧化层的形成，并且所需时间短，工艺简单，污染和能量消耗均较小。本发明还采用磁控溅射法即通入反应气体的反应磁控溅射技术，利用反应磁控溅射的物理沉积方式，使得硅片的背面形成非晶硅层，该方法没有了绕镀和起泡的问题，并且反应溅射后利用快速退火，将非晶硅层退火形成多晶硅层，同时也可激活掺杂元素，减少了耗时的扩散掺杂的步骤。以上所有步骤相比较与常见的Topcon电池制备方法相比，大大缩减了其制备时间，提高了生产效率。
尽管已经对本发明的技术方案做了较为详细的阐述和列举，应当理解，对于本领域技术人员来说，对上述实施例做出修改或者采用等同的替代方案，这对本领域的技术人员而言是显而易见，在不偏离本发明精神的基础上所做的这些修改或改进，均属于本发明要求保护的范围。
Claims (10)
1.一种TOPCon电池的制备方法，其特征在于，包括如下步骤：
S1,在制绒后的硅片正面进行硼掺杂，形成制绒硼掺杂扩散面；
S2，将步骤S1中所得的硅片放入含有氢氟酸溶液中浸泡，除去表面的自然氧化层；
S3,在步骤S2中所得硅片的背面制备超薄氧化硅层；
S4,在步骤S3中所得硅片的背面制备非晶硅层；
S5,沉积所得硅片的非晶硅层后进行快速退火处理，将非晶硅层退火形成多晶硅层，组装得到所述TOPCon电池。
2.根据权利要求1所述的一种TOPCon电池的制备方法，其特征在于：所述步骤S2中，氢氟酸溶液的质量浓度为1％～5％，浸泡的时间为0.5～3min。
3.根据权利要求1所述的一种TOPCon电池的制备方法，其特征在于：在所述步骤S3中包括利用紫外臭氧处理法在步骤S2中所得硅片的背面制备所述超薄氧化硅层。
4.根据权利要求3所述的一种TOPCon电池的制备方法，其特征在于：所述紫外臭氧处理法包括将步骤S2中硅片的背面朝向紫外灯光源，光照处理时间为3-10min。
5.根据权利要求4所述的一种TOPCon电池的制备方法，其特征在于：硅片的背面与紫外灯光源之间的距离为0.5-2cm。
6.根据权利要求1所述的一种TOPCon电池的制备方法，其特征在于：在所述步骤S4中包括利用磁控溅射法在步骤S3中所得硅片的背面制备所述非晶硅层。
7.根据权利要求6所述的一种TOPCon电池的制备方法，其特征在于：所述磁控溅射法的电源包括直流电源或交流射频电源中的任一种，所述磁控溅射法所用的靶材为高纯硅靶，所述磁控溅射法利用磷烷气体为掺杂源，磷烷特气瓶包括含量为1％的磷烷气体和99％的氩气，溅射时1％磷烷气体的流量为1-6sccm。
8.根据权利要求7所述的一种TOPCon电池的制备方法，其特征在于：所述磁控溅射法的电源为直流电源时，功率为5-100w，溅射工艺气压为0.5-2Pa，溅射时间为5-30min，非晶硅层的厚度为30-120nm。
9.根据权利要求7所述的一种TOPCon电池的制备方法，其特征在于：所述磁控溅射法的电源为交流射频电源时，功率为25w-250w，溅射工艺气压为2pa-5pa，溅射时间为2-15min，非晶硅层的厚度为50-150nm。
10.根据权利要求1所述的一种TOPCon电池的制备方法，其特征在于：所述步骤S5中退火温度为1000-1100度，温度保持时间为80-100s，升温速率为9-10度每秒。
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