CN115261863B - Metal particle corrosive liquid for fast recovery diode and metal corrosion method - Google Patents
Metal particle corrosive liquid for fast recovery diode and metal corrosion method Download PDFInfo
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- CN115261863B CN115261863B CN202210923562.8A CN202210923562A CN115261863B CN 115261863 B CN115261863 B CN 115261863B CN 202210923562 A CN202210923562 A CN 202210923562A CN 115261863 B CN115261863 B CN 115261863B
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- 238000005260 corrosion Methods 0.000 title claims abstract description 78
- 230000007797 corrosion Effects 0.000 title claims abstract description 77
- 229910052751 metal Inorganic materials 0.000 title claims abstract description 47
- 239000002184 metal Substances 0.000 title claims abstract description 47
- 239000002923 metal particle Substances 0.000 title claims abstract description 47
- 239000007788 liquid Substances 0.000 title claims abstract description 33
- 238000000034 method Methods 0.000 title claims abstract description 21
- 238000011084 recovery Methods 0.000 title claims abstract description 15
- 238000005554 pickling Methods 0.000 claims abstract description 18
- 238000001035 drying Methods 0.000 claims abstract description 16
- 238000011010 flushing procedure Methods 0.000 claims abstract description 15
- 238000007654 immersion Methods 0.000 claims abstract description 8
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 96
- 239000000243 solution Substances 0.000 claims description 33
- KCXVZYZYPLLWCC-UHFFFAOYSA-N EDTA Chemical compound OC(=O)CN(CC(O)=O)CCN(CC(O)=O)CC(O)=O KCXVZYZYPLLWCC-UHFFFAOYSA-N 0.000 claims description 31
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 29
- 239000011259 mixed solution Substances 0.000 claims description 22
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 claims description 20
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 20
- 238000005530 etching Methods 0.000 claims description 16
- 238000002156 mixing Methods 0.000 claims description 12
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 claims description 10
- 229960000583 acetic acid Drugs 0.000 claims description 10
- 235000011114 ammonium hydroxide Nutrition 0.000 claims description 10
- 239000012362 glacial acetic acid Substances 0.000 claims description 10
- 239000004809 Teflon Substances 0.000 claims description 6
- 229920006362 Teflon® Polymers 0.000 claims description 6
- 239000000843 powder Substances 0.000 claims description 6
- PQLVXDKIJBQVDF-UHFFFAOYSA-N acetic acid;hydrate Chemical compound O.CC(O)=O PQLVXDKIJBQVDF-UHFFFAOYSA-N 0.000 claims description 4
- 238000002360 preparation method Methods 0.000 claims description 4
- 238000002791 soaking Methods 0.000 claims description 4
- 239000002253 acid Substances 0.000 abstract description 10
- 230000035772 mutation Effects 0.000 abstract description 4
- 235000012431 wafers Nutrition 0.000 description 16
- 230000000694 effects Effects 0.000 description 10
- 230000002159 abnormal effect Effects 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 238000012360 testing method Methods 0.000 description 3
- 101100269850 Caenorhabditis elegans mask-1 gene Proteins 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000005457 optimization Methods 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 1
- 238000010000 carbonizing Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000001546 nitrifying effect Effects 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/10—Etching compositions
- C23F1/14—Aqueous compositions
- C23F1/16—Acidic compositions
- C23F1/30—Acidic compositions for etching other metallic material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/10—Etching compositions
- C23F1/14—Aqueous compositions
- C23F1/16—Acidic compositions
- C23F1/20—Acidic compositions for etching aluminium or alloys thereof
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/10—Etching compositions
- C23F1/14—Aqueous compositions
- C23F1/16—Acidic compositions
- C23F1/26—Acidic compositions for etching refractory metals
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/10—Etching compositions
- C23F1/14—Aqueous compositions
- C23F1/16—Acidic compositions
- C23F1/28—Acidic compositions for etching iron group metals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67075—Apparatus for fluid treatment for etching for wet etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/868—PIN diodes
Abstract
The invention discloses a metal particle corrosive liquid for a fast recovery diode and a metal corrosion method in the technical field of fast recovery diodes. The metal corrosion method sequentially comprises the following steps: placing the photoetched wafer in an acid pickling basket, and performing preliminary metal corrosion treatment in a conventional manner; immersing the wafer subjected to the preliminary metal corrosion treatment in a metal particle corrosive liquid, wherein the temperature of the metal particle corrosive liquid is 18-22 ℃, the immersion time is 50-70s, and continuously shaking an acid pickling basket during the immersion to finish secondary corrosion; and (3) placing the wafer subjected to the secondary corrosion treatment in a constant environment for drying after flushing and spin-drying treatment. The metal corrosion method is used for carrying out secondary corrosion on the basis of conventional corrosion, and the problem of metal particle residue on the surface of a corroded product is effectively solved by the special metal particle corrosive liquid, so that the product is ensured not to have the electric leakage mutation phenomenon caused by the problem of metal particles.
Description
Technical Field
The invention relates to the technical field of fast recovery diodes, in particular to a metal particle corrosive liquid for a fast recovery diode and a metal corrosion method.
Background
At present, in the preparation process of the fast recovery diode, metal corrosion process treatment is needed after a metal layer is prepared by evaporation and photoetching. The metal etching aims to remove the exposed part of the lower layer material in the exposed and developed photoresist micropattern, namely, the pattern identical to the photoresist is reproduced on the lower layer material.
After the metal corrosion treatment, flushing and spin-drying processes are carried out according to the conventional flow. However, after product testing, the product has poor electric leakage consistency, and partial products have abnormal electric leakage. In addition, the observation under a microscope shows that a part of products after metal corrosion and flushing treatment have few residual metal particles in a corrosion area, the flushing process cannot be completely removed, and the residual metal causes abnormal leakage during the subsequent test.
Disclosure of Invention
The present application addresses at least in part the above-mentioned problems by providing a metal particle etching solution and a metal etching method for a fast recovery diode.
The embodiment of the application provides a metal particle corrosive liquid of a fast recovery diode, which comprises the following components in percentage by volume: 0.7-0.8:0.2-0.3:0.2-0.3:0.1-0.15 of water, hydrogen peroxide, ammonia water, glacial acetic acid and ethylenediamine tetraacetic acid mixed solution, wherein the mass ratio of water to ethylenediamine tetraacetic acid in the ethylenediamine tetraacetic acid mixed solution is 40-66:1.
the beneficial effects of the above embodiment are that: the metal particle corrosive liquid can effectively remove a few metal particles remained in the corrosion area in the prior art, thereby reducing the abnormal condition of electric leakage
Based on the above embodiments, the present application may be further improved, specifically as follows:
in one embodiment of the present application, the metal particle etching solution further includes a sodium hydroxide solution, and the water, hydrogen peroxide, ammonia water, glacial acetic acid, ethylenediamine tetraacetic acid mixed solution and the sodium hydroxide solution correspond to a volume ratio of 1:0.7-0.8:0.2-0.3:0.2-0.3:0.1-0.15:0.1 to 0.15 percent, wherein the mass percentage concentration of sodium hydroxide in the sodium hydroxide solution is 1.5 to 2.5 percent. After the sodium hydroxide solution is added, the phenomenon of color change of the wafer after being soaked by the metal particle corrosive liquid can be avoided, and the metal color on the surface of the wafer is kept consistent.
In one embodiment of the present application, the corresponding volume ratio of the water, hydrogen peroxide, ammonia water, glacial acetic acid, ethylenediamine tetraacetic acid mixed solution and sodium hydroxide solution is 1:0.75:0.25:0.25:0.125:0.125, wherein the mass ratio of water in the ethylenediamine tetraacetic acid mixed solution to ethylenediamine tetraacetic acid is 50: and 1, in the sodium hydroxide solution, the mass percentage concentration of sodium hydroxide is 2%.
In one embodiment of the present application, the method for preparing the metal particle etching solution is as follows:
mixing water and ethylenediamine tetraacetic acid powder according to the proportion to prepare ethylenediamine tetraacetic acid mixed solution, and mixing water and sodium hydroxide powder to prepare sodium hydroxide solution;
standing the ethylenediamine tetraacetic acid mixed solution and the sodium hydroxide solution for more than 1 h;
mixing water, hydrogen peroxide, ammonia water, glacial acetic acid and ethylenediamine tetraacetic acid mixed solution according to the proportion, adding sodium hydroxide solution, and mixing to prepare the metal particle corrosive solution.
The embodiment of the application also provides a metal corrosion method of the fast recovery diode, which sequentially comprises the following steps:
placing the photoetched wafer in an acid pickling basket, and performing preliminary metal corrosion treatment in a conventional manner;
immersing the wafer subjected to the preliminary metal corrosion treatment in the metal particle corrosive liquid, wherein the temperature of the metal particle corrosive liquid is 18-22 ℃, the immersion time is 50-70s, and continuously shaking the pickling basket during the immersion to finish secondary corrosion;
and (3) placing the wafer subjected to the secondary corrosion treatment in a constant environment for drying after flushing and spin-drying treatment.
The beneficial effects of the above embodiment are that: the secondary corrosion is carried out by adding a groove of metal particle corrosive liquid on the basis of conventional corrosion, so that the problem of metal particle residue on the surface of a corroded product is effectively solved, and the product is ensured not to have the electric leakage mutation phenomenon caused by the problem of metal particles; meanwhile, a drying step is added after the secondary corrosion, so that water vapor brought by corrosion flushing of the product is removed, and the consistency of electric leakage of the product is ensured.
In one embodiment of the present application, during the secondary etching, the temperature of the metal particle etching solution is 18 ℃, and the soaking time is 60s.
In one embodiment of the present application, the constant ambient temperature is 20 ℃, the humidity is 15%, and the drying time is 20-24 hours.
In one embodiment of the present application, the acid wash basket material is teflon, the acid wash basket includes a cover and an H-plane, the acid wash basket is provided with a plurality of through holes at intervals on the cover, and the inner diameter of the through holes gradually decreases from inside to outside. The bell mouth-shaped through holes are formed in the surface to optimize the pickling basket, so that the side corrosion quantity difference between metal corrosion sheets can be effectively improved, the effect of balancing corrosion quantity in the basket is achieved, the electric leakage consistency of products is ensured, and the rework rate of metal corrosion is reduced.
One or more technical solutions provided in the embodiments of the present application at least have the following technical effects or advantages:
1. the secondary corrosion is carried out on the basis of conventional corrosion, the problem of metal particle residue on the surface of the corroded product is effectively solved through the metal particle corrosive liquid, and the product is ensured not to have the electric leakage mutation phenomenon caused by the problem of metal particles;
2. after the secondary corrosion, a drying step is added to remove water vapor brought by corrosion flushing of the product, so that the consistency of electric leakage of the product is ensured;
3. the bell mouth-shaped through holes are formed in the surface to optimize the pickling basket, so that the side corrosion quantity difference between metal corrosion sheets can be effectively improved, the effect of balancing corrosion quantity in the basket is achieved, the electric leakage consistency of products is ensured, and the rework rate of metal corrosion is reduced.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below. Like elements or portions are generally identified by like reference numerals throughout the several figures. In the drawings, elements or portions thereof are not necessarily drawn to scale.
FIG. 1 is a flow chart showing the steps of a method for etching a metal of a fast recovery diode in embodiment 2;
FIG. 2 is a schematic view of the structure of the pickling basket in example 3.
Wherein, 1, the mask, 2.H, 3, the through hole.
Detailed Description
The present invention is further illustrated below in conjunction with the specific embodiments, it being understood that these embodiments are meant to be illustrative of the invention only and not limiting the scope of the invention, and that modifications of the invention, which are equivalent to those skilled in the art to which the invention pertains, will fall within the scope of the invention as defined in the claims appended hereto.
It should be noted that: like reference numerals and letters denote like items in the following figures, and thus once an item is defined in one figure, no further definition or explanation thereof is necessary in the following figures.
In the description of the present invention, the schematic representations of the above terms are not necessarily directed to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples. Furthermore, the various embodiments or examples of the invention described and the features of the various embodiments or examples may be combined and combined by those skilled in the art without contradiction.
According to the embodiment of the application, the problem of abnormal product leakage caused by a small amount of metal particles remained in the corrosion area in the prior art is solved by providing the metal particle corrosive liquid and the metal corrosion method for the fast recovery diode.
The technical scheme in the embodiment of the application aims to solve the problems, and the overall thought is as follows:
example 1:
the metal particle corrosive liquid of the fast recovery diode comprises the following components in percentage by volume: 0.7-0.8:0.2-0.3:0.2-0.3:0.1-0.15:0.1-0.15 of water, hydrogen peroxide, ammonia water, glacial acetic acid, ethylenediamine tetraacetic acid mixed solution and sodium hydroxide solution, wherein the mass ratio of water and ethylenediamine tetraacetic acid in the ethylenediamine tetraacetic acid mixed solution is 40-66:1, in sodium hydroxide solution, the mass percentage concentration of sodium hydroxide is 1.5-2.5%.
Wherein, the volume ratio of water, hydrogen peroxide, ammonia water, glacial acetic acid, ethylenediamine tetraacetic acid mixed solution and sodium hydroxide solution is preferably 1:0.75:0.25:0.25:0.125:0.125. the preferable mass ratio of water to ethylenediamine tetraacetic acid in the ethylenediamine tetraacetic acid mixed solution is 50: in the sodium hydroxide solution, the sodium hydroxide is preferably 2% in mass percent concentration.
The metal particle corrosive liquid with the proportion can effectively remove metal particles such as Ag, ti, ni, AL.
Specifically, the method for preparing the metal particle corrosive liquid comprises the following steps:
mixing water and ethylenediamine tetraacetic acid powder according to the proportion to prepare ethylenediamine tetraacetic acid mixed solution, and mixing water and sodium hydroxide powder to prepare sodium hydroxide solution;
standing the ethylenediamine tetraacetic acid mixed solution and the sodium hydroxide solution for more than 1 h;
mixing water, hydrogen peroxide, ammonia water, glacial acetic acid and ethylenediamine tetraacetic acid mixed solution according to the proportion, adding sodium hydroxide solution, and mixing to prepare the metal particle corrosive solution.
The metal etching solution should be prepared and used at present, and generally can be used only within 5 hours after the preparation is completed.
Example 2:
as shown in fig. 1, a metal etching method of a fast recovery diode sequentially includes the following steps:
s1, preliminary corrosion: and placing the photoetched wafer in an acid pickling basket, and performing preliminary metal corrosion treatment in a conventional manner.
The conventional manner of preliminary etching that can be employed is exemplified as follows: firstly placing the wafer into a nitrifying acid mixed corrosive liquid to corrode metals Ag and Ni for 150-160s, placing the wafer into a water tank to flush for 10min after corrosion, placing the wafer into a solution B (1:200=HF: H2O) to corrode metal Ti after flushing for 30-35s, flushing for 10min after corrosion, placing the wafer into an Al corrosive liquid to corrode metal Al after flushing for 290-310s, flushing for 20min after corrosion, finishing preliminary corrosion after flushing, and oxidizing or carbonizing a small amount of granular metal to remain after preliminary corrosion.
S2, secondary corrosion: and (3) immersing the wafer subjected to the preliminary metal corrosion treatment in the metal particle corrosive liquid in the embodiment 1, wherein the temperature of the metal particle corrosive liquid is 18-22 ℃, the immersion time is 50-70s, and operators continuously shake the pickling basket during the immersion period to finish secondary corrosion.
Wherein, the preferable temperature of the metal particle corrosive liquid is 18 ℃ and the soaking time is 60s. The over-corrosion phenomenon is easy to occur due to the over-high temperature, namely, the line at the edge of the ring is provided with a convex point, and the operation is inconvenient. Therefore, the corrosion temperature is reduced, the soaking time is prolonged, and the product yield can be improved.
S3, drying: and (3) placing the wafer subjected to the secondary corrosion treatment in a constant environment for drying after flushing and spin-drying treatment.
Wherein the constant environment is preferably 20 ℃, the humidity is 15%, and the drying time is 20-24h. The mobile ions caused by the residual water vapor in the corrosion process can cause a small amount of electric leakage and instability of the product. Therefore, the product is dried in a standard constant environment, so that water vapor can be removed, the consistency of product leakage is ensured, and the product yield is improved.
Example 3:
in example 2, as shown in fig. 2, the acid washing basket used in the primary etching and the secondary etching steps is made of teflon and comprises a mask 1 and an H-surface 2, a plurality of through holes 3 are formed in the mask 1 at intervals, and the inner diameters of the through holes 3 are gradually reduced from inside to outside.
Teflon baskets are often used in cleaning and corrosion treatment. To prevent particles from falling on the surface of the article and to avoid deformation of the teflon basket during the pickling process, the teflon basket structure includes a mask. However, the corrosion effect of one side close to the mask is poor due to the blocking of the mask and poor acid liquid circulation, the corrosion effect of wafers in the basket after metal corrosion is different, and the test shows that after the product processing is finished, part of wafers have the problem of large leakage current, so that the yield is low.
As shown in Table one and Table two below, the wafer numbers 1-5 and 26-30 are wafers near the mask. The bell mouth-shaped through holes are formed in the surface to optimize the pickling basket, so that the side corrosion quantity difference between metal corrosion sheets can be effectively improved, the effect of balancing corrosion quantity in the basket is achieved, the electric leakage consistency of products is ensured, and the rework rate of metal corrosion is reduced.
Meter I and metal corrosion effect meter before optimization of pickling basket
Meter two and metal corrosion effect meter after optimization of pickling basket
The technical scheme in the embodiment of the application at least has the following technical effects or advantages:
1. the secondary corrosion is carried out on the basis of conventional corrosion, the problem of metal particle residue on the surface of the corroded product is effectively solved through the metal particle corrosive liquid, and the product is ensured not to have the electric leakage mutation phenomenon caused by the problem of metal particles;
2. after the secondary corrosion, a drying step is added to remove water vapor brought by corrosion flushing of the product, so that the consistency of electric leakage of the product is ensured;
3. the bell mouth-shaped through holes are formed in the surface to optimize the pickling basket, so that the side corrosion quantity difference between metal corrosion sheets can be effectively improved, the effect of balancing corrosion quantity in the basket is achieved, the electric leakage consistency of products is ensured, and the rework rate of metal corrosion is reduced.
While embodiments of the present invention have been shown and described above, it will be understood that the above embodiments are illustrative and not to be construed as limiting the invention, and that variations, modifications, alternatives and variations may be made to the above embodiments by one of ordinary skill in the art within the scope of the invention.
Claims (4)
1. The metal corrosion method of the fast recovery diode is characterized by comprising the following steps in sequence:
placing the photoetched wafer in a pickling basket, and performing preliminary metal corrosion treatment in a conventional manner, wherein the pickling basket is made of Teflon and comprises a mask surface and an H surface, a plurality of through holes are formed in the mask surface of the pickling basket at intervals, and the inner diameters of the through holes are gradually reduced from inside to outside;
immersing the wafer subjected to primary metal corrosion treatment in a metal particle corrosive liquid, wherein the temperature of the metal particle corrosive liquid is 18-22 ℃, the immersion time is 50-70s, and the pickling basket is continuously shaken during the immersion to complete secondary corrosion, and the metal particle corrosive liquid comprises the following components in percentage by volume: 0.7-0.8:0.2-0.3:0.2-0.3:0.1-0.15:0.1-0.15 of water, hydrogen peroxide, ammonia water, glacial acetic acid, ethylenediamine tetraacetic acid mixed solution and sodium hydroxide solution, wherein the mass ratio of water to ethylenediamine tetraacetic acid in the ethylenediamine tetraacetic acid mixed solution is 40-66:1, in a sodium hydroxide solution, the mass percentage concentration of sodium hydroxide is 1.5-2.5%, and the preparation method of the metal particle corrosive liquid comprises the following steps: mixing water and ethylenediamine tetraacetic acid powder according to the proportion to prepare ethylenediamine tetraacetic acid mixed solution, and mixing water and sodium hydroxide powder to prepare sodium hydroxide solution;
standing the ethylenediamine tetraacetic acid mixed solution and the sodium hydroxide solution for more than 1 h; mixing water, hydrogen peroxide, ammonia water, glacial acetic acid and ethylenediamine tetraacetic acid mixed solution according to the proportion, adding sodium hydroxide solution, mixing, and preparing the metal particle corrosive liquid, wherein the metal corrosive liquid is used within 5 hours after the preparation is finished;
and (3) placing the wafer subjected to the secondary corrosion treatment in a constant environment for drying after flushing and spin-drying treatment.
2. The metal etching method according to claim 1, wherein: the corresponding volume ratio of water, hydrogen peroxide, ammonia water, glacial acetic acid, ethylenediamine tetraacetic acid mixed solution and sodium hydroxide solution in the metal particle corrosive liquid is 1:0.75:0.25:0.25:0.125:0.125, wherein the mass ratio of water in the ethylenediamine tetraacetic acid mixed solution to ethylenediamine tetraacetic acid is 50: and 1, in the sodium hydroxide solution, the mass percentage concentration of sodium hydroxide is 2%.
3. The metal etching method according to claim 1, wherein: and in the secondary corrosion, the temperature of the metal particle corrosive liquid is 18 ℃, and the soaking time is 60s.
4. A metal etching method according to claim 3, wherein: the constant ambient temperature is 20 ℃, the humidity is 15%, and the drying time is 20-24h.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210923562.8A CN115261863B (en) | 2022-08-02 | 2022-08-02 | Metal particle corrosive liquid for fast recovery diode and metal corrosion method |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202210923562.8A CN115261863B (en) | 2022-08-02 | 2022-08-02 | Metal particle corrosive liquid for fast recovery diode and metal corrosion method |
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| CN115261863A CN115261863A (en) | 2022-11-01 |
| CN115261863B true CN115261863B (en) | 2024-03-26 |
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Citations (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5462892A (en) * | 1992-06-22 | 1995-10-31 | Vlsi Technology, Inc. | Semiconductor processing method for preventing corrosion of metal film connections |
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