CN117089848A - Method for cleaning halftone mask - Google Patents
Method for cleaning halftone mask Download PDFInfo
- Publication number
- CN117089848A CN117089848A CN202311039777.4A CN202311039777A CN117089848A CN 117089848 A CN117089848 A CN 117089848A CN 202311039777 A CN202311039777 A CN 202311039777A CN 117089848 A CN117089848 A CN 117089848A
- Authority
- CN
- China
- Prior art keywords
- cleaning
- halftone mask
- mask plate
- mixed solution
- hydrogen peroxide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004140 cleaning Methods 0.000 title claims abstract description 72
- 238000000034 method Methods 0.000 title claims abstract description 24
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims abstract description 42
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims abstract description 30
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 18
- 239000011259 mixed solution Substances 0.000 claims abstract description 15
- 239000008367 deionised water Substances 0.000 claims abstract description 13
- 229910021641 deionized water Inorganic materials 0.000 claims abstract description 13
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 claims description 3
- 235000011114 ammonium hydroxide Nutrition 0.000 claims description 3
- 238000012360 testing method Methods 0.000 claims description 3
- 239000000243 solution Substances 0.000 abstract description 16
- 239000002184 metal Substances 0.000 abstract description 13
- 238000002834 transmittance Methods 0.000 description 11
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 4
- 238000005260 corrosion Methods 0.000 description 3
- 230000001590 oxidative effect Effects 0.000 description 3
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000002923 metal particle Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- 229910002092 carbon dioxide Inorganic materials 0.000 description 1
- 230000003749 cleanliness Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- VUZPPFZMUPKLLV-UHFFFAOYSA-N methane;hydrate Chemical compound C.O VUZPPFZMUPKLLV-UHFFFAOYSA-N 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23G—CLEANING OR DE-GREASING OF METALLIC MATERIAL BY CHEMICAL METHODS OTHER THAN ELECTROLYSIS
- C23G1/00—Cleaning or pickling metallic material with solutions or molten salts
- C23G1/02—Cleaning or pickling metallic material with solutions or molten salts with acid solutions
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/10—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration
- B08B3/12—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration by sonic or ultrasonic vibrations
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23G—CLEANING OR DE-GREASING OF METALLIC MATERIAL BY CHEMICAL METHODS OTHER THAN ELECTROLYSIS
- C23G1/00—Cleaning or pickling metallic material with solutions or molten salts
- C23G1/14—Cleaning or pickling metallic material with solutions or molten salts with alkaline solutions
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
Abstract
The invention discloses a cleaning method of a halftone mask, which comprises the following steps of firstly, cleaning the halftone mask by using a first mixed solution; step two, cleaning the half-tone mask plate cleaned in the step one by using a second mixed solution; step three, cleaning the half-tone mask plate cleaned in the step two by using ultrasonic waves; step four, cleaning the half-tone mask plate cleaned in the step three by using deionized water; in the first step, the first mixed solution is obtained by mixing sulfuric acid and hydrogen peroxide according to the volume ratio of 7-8:1, and the cleaning temperature is 70-90 ℃; according to the cleaning method of the technical scheme, the proportion of sulfuric acid to hydrogen peroxide and the cleaning temperature are adjusted, so that the SPM solution is controlled to corrode the semi-permeable metal film layer on the surface of the half-tone mask, and meanwhile, the cleaning capability of residual organic matters on the surface of the half-tone mask is ensured.
Description
Technical Field
The invention belongs to the field of mask cleaning, and particularly relates to a method for cleaning a halftone mask.
Background
In the mask production process, cleaning is an important link, and the quality of cleaning results directly determine whether the mask can be normally delivered. In the mask transfer process, the surface of the mask is attached with some organic matters, metal particles, ash and other foreign matters, and the foreign matters on the surface of the mask need to be cleaned before shipment. A common method of removing organics and metal particles is to use SPM (a mixture of sulfuric acid and hydrogen peroxide) or ozone water. For a common mask, SPM is used for cleaning, so that the influence on a metal film layer is small, and the product quality is not influenced. However, for a halftone mask, the SPM affects the transmittance of the metal film, and the transmittance is the most critical parameter of the halftone mask. The ozone water is used for cleaning, so that the influence on the transmittance is small, but in the prior art, most mask plate production enterprises use a cleaning machine with an SPM cleaning function, and cannot use the ozone water for cleaning. There are two methods for cleaning a halftone mask by using a cleaning machine having only an SPM cleaning function, if the cleaning is to be completed without affecting the transmittance. Firstly, equipment is modified to increase the function of ozone water, but the method has higher cost and longer time consumption. Secondly, the proportion of the SPM is adjusted, so that the mask is cleaned without influencing the transmittance.
Disclosure of Invention
The invention aims to provide a cleaning method of a halftone mask, which solves the problem that a metal layer on the halftone mask is damaged when the halftone mask is cleaned by SPM in the prior art.
The technical scheme of the invention is that the cleaning method of the halftone mask plate comprises the following steps:
step one, cleaning a halftone mask plate by using a first mixed solution;
step two, cleaning the half-tone mask plate cleaned in the step one by using a second mixed solution;
step three, cleaning the half-tone mask plate cleaned in the step two by using ultrasonic waves;
step four, cleaning the half-tone mask plate cleaned in the step three by using deionized water;
in the first step, the first mixed solution is obtained by mixing sulfuric acid and hydrogen peroxide according to the volume ratio of 7-8:1, and the cleaning temperature is 70-90 ℃.
Preferably, in the second step, the second mixed solution is obtained by mixing ammonia water, hydrogen peroxide and deionized water according to a volume ratio of 1:1:15.
Preferably, in the third step, the ultrasonic power test is not less than 60mV when the halftone mask is cleaned by using ultrasonic waves.
Preferably, in the fourth step, the temperature of the deionized water is 70-100 ℃, and the cleaning time is not less than 8min.
Preferably, the temperature of the deionized water is 100 ℃, and the cleaning time is 15-20 min.
The cleaning method of the halftone mask has the beneficial effects that: the proportion of sulfuric acid and hydrogen peroxide and the cleaning temperature are adjusted, so that the corrosion of the SPM solution to the semi-permeable metal film layer on the surface of the half-tone mask plate is controlled, and the cleaning capability of residual organic matters on the surface of the half-tone mask plate is ensured.
Detailed Description
In order to facilitate understanding of the technical solution of the present invention by those skilled in the art, the technical solution of the present invention will be further described with reference to specific embodiments.
The technical scheme of the invention is that the cleaning method of the halftone mask plate comprises the following steps:
step one, cleaning a halftone mask plate by using a first mixed solution;
step two, cleaning the half-tone mask plate cleaned in the step one by using a second mixed solution;
step three, cleaning the half-tone mask plate cleaned in the step two by using ultrasonic waves;
step four, cleaning the half-tone mask plate cleaned in the step three by using deionized water;
in the first step, the first mixed solution is obtained by mixing sulfuric acid and hydrogen peroxide according to the volume ratio of 7-8:1, and the cleaning temperature is 70-90 ℃.
In the second step, the second mixed solution is obtained by mixing ammonia water, hydrogen peroxide and deionized water according to the volume ratio of 1:1:15.
In the third step, the ultrasonic power test is not less than 60mV when the ultrasonic wave is used for cleaning the halftone mask.
In the fourth step, the temperature of the deionized water is 70-100 ℃, and the cleaning time is not less than 8min. The optimal temperature of the deionized water is 100 ℃, and the cleaning time is 15-20 min.
SPM solution obtained by mixing sulfuric acid and hydrogen peroxide has strong oxidizing property, and has certain micro-corrosion capability on a semi-transparent metal film layer on the half-tone mask plate, and the more the semi-transparent metal film layer is corroded, the larger the transmittance is. Theoretically, the lower the content of hydrogen peroxide, the weaker the oxidizing property of SPM, and the lower the temperature, the slower the reaction rate, so that the less the corrosion of the semi-permeable metal film layer on the halftone mask is. The cleaning principle of SPM is that organic matters on the surface of a mask plate are carbonized through sulfuric acid, and then carbonized organic matters are oxidized into carbon dioxide and water through hydrogen peroxide, so that the aim of cleaning is fulfilled. However, if the content of the hydrogen peroxide in the SPM solution is too small, the solution cannot have enough oxidizing capacity on carbonized organic matters, and the cleaning effect of the mask is affected. In the normal mask cleaning process, the proportion of SPM is generally about 3-4:1 (the optimal proportion is 4:1), sulfuric acid is heated to above 60 ℃ and mixed with hydrogen peroxide, the temperature of the mixed SPM solution reaches above 110 ℃, so that the high-temperature hydrogen peroxide can corrode a semi-permeable metal film layer on the halftone mask, and the halftone mask can obtain a large transmittance. In the scheme, aiming at the halftone mask cleaning, the proportion of SPM solution (sulfuric acid and hydrogen peroxide) is adjusted to 7-8:1 (sulfuric acid: hydrogen peroxide), and the optimal ratio of sulfuric acid to hydrogen peroxide is 7:1 (4:0.57), so that the proportion of hydrogen peroxide in the SPM solution is reduced, namely the corrosiveness of the SPM solution is reduced. When the SPM solution is prepared, firstly, sulfuric acid is heated, the temperature is kept at not more than 40 ℃, then, the sulfuric acid is mixed with hydrogen peroxide, the temperature of the mixed SPM solution is controlled between 70 ℃ and 90 ℃, and the optimal choice is 80 ℃.
In order to verify the influence of the cleaning effect and the transmittance of the halftone mask by the cleaning method of the halftone mask in the technical scheme, several cleaning experiments, namely experimental results, are provided below. Selecting a plurality of halftone masks in the same batch, cleaning the halftone masks in SPM solutions with the same volume and different proportions, cleaning the halftone masks in sequence through a second step, a third step and a fourth step, and observing each group of the halftone masks after cleaning.
Table 1: five sets of specific examples and two sets of specific comparative examples of the technical scheme of the invention
Table 2: results of halftone masks cleaned by five sets of specific examples and two sets of specific comparative examples of the technical scheme of the invention
| Example 1 | Example two | Example III | Example IV | Comparative example one | Comparative example two | |
| Influence of 30% transmittance substrate | 0.46％ | 0.42％ | 0.47％ | 0.45％ | 1.05％ | 1.01％ |
| Number of dirty points of 1 μm or more | 12 | 13 | 11 | 12 | 10 | 10 |
As can be seen from Table 2, the halftone mask after being cleaned by the cleaning method according to the technical scheme of the invention is equivalent to the prior art in cleaning degree, and meets the cleaning cleanliness requirement. The cleaning method of the technical scheme of the invention has small influence on the transmittance of the metal semi-permeable metal film layer on the halftone mask plate, meets the requirements, but the cleaning method in the prior art has large influence on the transmittance of the metal semi-permeable metal film layer on the halftone mask plate, and does not meet the requirements.
While the invention has been described above with reference to exemplary embodiments, it should be apparent that the implementation of the invention is not limited by the foregoing, but rather is within the scope of the invention as long as various insubstantial modifications of the method concept and technical solution of the invention are adopted, or the inventive concept and technical solution are directly applied to other occasions without any modifications.
Claims (5)
1. The method for cleaning the halftone mask plate is characterized by comprising the following steps of:
step one, cleaning a halftone mask plate by using a first mixed solution;
step two, cleaning the half-tone mask plate cleaned in the step one by using a second mixed solution;
step three, cleaning the half-tone mask plate cleaned in the step two by using ultrasonic waves;
step four, cleaning the half-tone mask plate cleaned in the step three by using deionized water;
in the first step, the first mixed solution is obtained by mixing sulfuric acid and hydrogen peroxide according to the volume ratio of 7-8:1, and the cleaning temperature is 70-90 ℃.
2. The method for cleaning a halftone mask according to claim 1, wherein in the second step, the second mixed solution is obtained by mixing ammonia water, hydrogen peroxide and deionized water according to a volume ratio of 1:1:15.
3. The method according to claim 1, wherein in the third step, the ultrasonic power test is not less than 60mV when the halftone mask is cleaned by ultrasonic waves.
4. The method for cleaning halftone mask according to claim 1, wherein in the fourth step, the deionized water is at a temperature of 70-100 ℃ and the cleaning time is not less than 8min.
5. The method for cleaning a halftone mask according to claim 4, wherein the deionized water is at a temperature of 100 ℃ for a cleaning time of 15-20 min.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311039777.4A CN117089848A (en) | 2023-08-17 | 2023-08-17 | Method for cleaning halftone mask |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311039777.4A CN117089848A (en) | 2023-08-17 | 2023-08-17 | Method for cleaning halftone mask |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN117089848A true CN117089848A (en) | 2023-11-21 |
Family
ID=88770867
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202311039777.4A Pending CN117089848A (en) | 2023-08-17 | 2023-08-17 | Method for cleaning halftone mask |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN117089848A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117644074A (en) * | 2024-01-30 | 2024-03-05 | 深圳市龙图光罩股份有限公司 | Mask cleaning method, device, terminal equipment and storage medium |
-
2023
- 2023-08-17 CN CN202311039777.4A patent/CN117089848A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117644074A (en) * | 2024-01-30 | 2024-03-05 | 深圳市龙图光罩股份有限公司 | Mask cleaning method, device, terminal equipment and storage medium |
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