CN113764259B - Method for cleaning semiconductor chip - Google Patents
Method for cleaning semiconductor chip Download PDFInfo
- Publication number
- CN113764259B CN113764259B CN202010984685.3A CN202010984685A CN113764259B CN 113764259 B CN113764259 B CN 113764259B CN 202010984685 A CN202010984685 A CN 202010984685A CN 113764259 B CN113764259 B CN 113764259B
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- Prior art keywords
- semiconductor chip
- cleaning
- mixed solution
- hydrogen chloride
- water
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 64
- 238000004140 cleaning Methods 0.000 title claims abstract description 58
- 238000000034 method Methods 0.000 title claims abstract description 24
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims abstract description 38
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims abstract description 38
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims abstract description 37
- 229910000041 hydrogen chloride Inorganic materials 0.000 claims abstract description 37
- IXCSERBJSXMMFS-UHFFFAOYSA-N hydrogen chloride Substances Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 claims abstract description 37
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 35
- 239000011259 mixed solution Substances 0.000 claims abstract description 32
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims abstract description 19
- 238000010981 drying operation Methods 0.000 claims abstract description 4
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims description 36
- 150000004968 peroxymonosulfuric acids Chemical class 0.000 abstract 1
- 239000002184 metal Substances 0.000 description 6
- 238000001035 drying Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 239000007788 liquid Substances 0.000 description 3
- 239000000243 solution Substances 0.000 description 2
- 230000004075 alteration Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/67034—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for drying
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
The invention discloses a method for cleaning a semiconductor chip, which adopts ozonized DI water to clean the surface of the semiconductor chip, sets the temperature to 60-70 ℃, then reduces the temperature to normal temperature, cleans the surface of the semiconductor chip again by using mixed solution of persulfuric acid and hydrogen peroxide, cleans the surface of the semiconductor chip by using mixed solution of hydrofluoric acid and hydrogen chloride, cleans the surface of the semiconductor chip by using mixed solution of hydrogen chloride and ozone, and finishes cleaning under the condition of 40-50 ℃ and drying operation.
Description
Technical Field
The invention relates to the technical field of a cleaning method of a semiconductor chip, in particular to a cleaning method of a semiconductor chip.
Background
The conventional cleaning method for semiconductor chips mostly needs to consume a large amount of cleaning solution, has less than ideal effect, and has the problem of re-pollution after cleaning, which greatly reduces the service life of the semiconductor chips, so that an improved technology is needed to solve the problem in the prior art.
Disclosure of Invention
The invention aims to provide a cleaning method of a semiconductor chip, which is environment-friendly, reduces the use amount of various cleaning liquids, and has the advantages that organic matters and oxide layers on the surface of the semiconductor chip are completely treated in the cleaning process, the effect is more obvious than that of the traditional cleaning method, hydrophilicity is generated on the surface, the metal pollution can be avoided again, the probability of secondary metal pollution is greatly reduced, the service life is ensured, and the problems in the background art are solved.
In order to achieve the above purpose, the present invention provides the following technical solutions: a cleaning method of a semiconductor chip includes the following steps:
Step one: cleaning the surface of the semiconductor chip by using ozonized DI water, and setting the temperature to 60-70 ℃ to remove organic matters on the surface;
step two: then the temperature is reduced to normal temperature, and the surface of the semiconductor chip is cleaned again by sulfuric acid and hydrogen peroxide mixed solution, so that organic matters on the surface are further removed;
Step three: cleaning the surface of the semiconductor chip by using mixed liquid of hydrofluoric acid and hydrogen chloride to remove an oxide layer;
Step four: cleaning the surface of the semiconductor chip by adopting a mixed solution of hydrogen chloride and ozone, and generating hydrophilicity on the surface of the semiconductor chip;
step five: and (5) performing drying operation at the temperature of 40-50 ℃ to finish cleaning.
Preferably, the first step to the fourth step are all performed in a vacuum environment.
Preferably, the concentration of the ozonated DI water in step one is 0.5ppm.
Preferably, in the step two, sulfuric acid in the sulfuric acid and hydrogen peroxide mixed solution: hydrogen peroxide: the ratio of water was 1:1:3.
Preferably, in the third step, hydrofluoric acid in the mixed solution of hydrofluoric acid and hydrogen chloride: hydrogen chloride: the ratio of water was 1:2:10.
Preferably, in the step four, the hydrogen chloride in the mixed solution of hydrogen chloride and ozone is as follows: ozone: the ratio of water was 1:3:7.
Compared with the prior art, the invention has the beneficial effects that:
the method is environment-friendly, reduces the use amount of various cleaning liquids, cleanly treats organic matters and oxide layers on the surface of the semiconductor chip in the cleaning process, has more obvious effect than the traditional cleaning method, generates hydrophilicity on the surface, can avoid metal pollution again, greatly reduces the probability of secondary metal pollution, and ensures the service life.
Detailed Description
The following description of the embodiments of the present invention will be made clearly and completely, and it is apparent that the described embodiments are only some embodiments of the present invention, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
The invention provides a technical scheme that: a cleaning method of a semiconductor chip includes the following steps:
step one: cleaning the surface of the semiconductor chip by using ozonized DI water (with the concentration of 0.5 ppm), and setting the temperature to be 60-70 ℃ to remove organic matters on the surface;
Step two: then the temperature is reduced to normal temperature, and the surface of the semiconductor chip is cleaned again by sulfuric acid and hydrogen peroxide mixed solution (sulfuric acid: hydrogen peroxide: water is 1:1:3), so that organic matters on the surface are further removed;
step three: cleaning the surface of the semiconductor chip by using a mixed solution of hydrofluoric acid and hydrogen chloride (hydrofluoric acid: hydrogen chloride: water is 1:2:10) to remove an oxide layer;
step four: cleaning the surface of the semiconductor chip by adopting a mixed solution of hydrogen chloride and ozone (hydrogen chloride: ozone: water is 1:3:7), and generating hydrophilicity on the surface of the semiconductor chip;
step five: and (5) performing drying operation at the temperature of 40-50 ℃ to finish cleaning.
Wherein, the first step to the fourth step are all carried out in a vacuum environment.
Embodiment one:
A cleaning method of a semiconductor chip includes the following steps:
Step one: cleaning the surface of the semiconductor chip with ozonized DI water (concentration of 0.5 ppm) and setting the temperature to 60 ℃ to remove organic matters on the surface;
Step two: then the temperature is reduced to normal temperature, and the surface of the semiconductor chip is cleaned again by sulfuric acid and hydrogen peroxide mixed solution (sulfuric acid: hydrogen peroxide: water is 1:1:3), so that organic matters on the surface are further removed;
step three: cleaning the surface of the semiconductor chip by using a mixed solution of hydrofluoric acid and hydrogen chloride (hydrofluoric acid: hydrogen chloride: water is 1:2:10) to remove an oxide layer;
step four: cleaning the surface of the semiconductor chip by adopting a mixed solution of hydrogen chloride and ozone (hydrogen chloride: ozone: water is 1:3:7), and generating hydrophilicity on the surface of the semiconductor chip;
step five: and (5) drying at 40 ℃ to finish cleaning.
Embodiment two:
A cleaning method of a semiconductor chip includes the following steps:
step one: cleaning the surface of the semiconductor chip with ozonized DI water (concentration of 0.5 ppm) and setting the temperature to 70 ℃ to remove organic matters on the surface;
Step two: then the temperature is reduced to normal temperature, and the surface of the semiconductor chip is cleaned again by sulfuric acid and hydrogen peroxide mixed solution (sulfuric acid: hydrogen peroxide: water is 1:1:3), so that organic matters on the surface are further removed;
step three: cleaning the surface of the semiconductor chip by using a mixed solution of hydrofluoric acid and hydrogen chloride (hydrofluoric acid: hydrogen chloride: water is 1:2:10) to remove an oxide layer;
step four: cleaning the surface of the semiconductor chip by adopting a mixed solution of hydrogen chloride and ozone (hydrogen chloride: ozone: water is 1:3:7), and generating hydrophilicity on the surface of the semiconductor chip;
step five: and (5) drying at 50 ℃ to finish cleaning.
Embodiment III:
A cleaning method of a semiconductor chip includes the following steps:
step one: cleaning the surface of the semiconductor chip with ozonized DI water (concentration of 0.5 ppm) and setting the temperature to 65 ℃ to remove organic matters on the surface;
Step two: then the temperature is reduced to normal temperature, and the surface of the semiconductor chip is cleaned again by sulfuric acid and hydrogen peroxide mixed solution (sulfuric acid: hydrogen peroxide: water is 1:1:3), so that organic matters on the surface are further removed;
step three: cleaning the surface of the semiconductor chip by using a mixed solution of hydrofluoric acid and hydrogen chloride (hydrofluoric acid: hydrogen chloride: water is 1:2:10) to remove an oxide layer;
step four: cleaning the surface of the semiconductor chip by adopting a mixed solution of hydrogen chloride and ozone (hydrogen chloride: ozone: water is 1:3:7), and generating hydrophilicity on the surface of the semiconductor chip;
step five: and (5) drying at 45 ℃ to finish cleaning.
Embodiment four:
A cleaning method of a semiconductor chip includes the following steps:
Step one: cleaning the surface of the semiconductor chip with ozonized DI water (concentration of 0.5 ppm) and setting the temperature to 60 ℃ to remove organic matters on the surface;
Step two: then the temperature is reduced to normal temperature, and the surface of the semiconductor chip is cleaned again by sulfuric acid and hydrogen peroxide mixed solution (sulfuric acid: hydrogen peroxide: water is 1:1:3), so that organic matters on the surface are further removed;
step three: cleaning the surface of the semiconductor chip by using a mixed solution of hydrofluoric acid and hydrogen chloride (hydrofluoric acid: hydrogen chloride: water is 1:2:10) to remove an oxide layer;
step four: cleaning the surface of the semiconductor chip by adopting a mixed solution of hydrogen chloride and ozone (hydrogen chloride: ozone: water is 1:3:7), and generating hydrophilicity on the surface of the semiconductor chip;
step five: and (5) drying at 50 ℃ to finish cleaning.
Fifth embodiment:
A cleaning method of a semiconductor chip includes the following steps:
step one: cleaning the surface of the semiconductor chip with ozonized DI water (concentration of 0.5 ppm) and setting the temperature to 70 ℃ to remove organic matters on the surface;
Step two: then the temperature is reduced to normal temperature, and the surface of the semiconductor chip is cleaned again by sulfuric acid and hydrogen peroxide mixed solution (sulfuric acid: hydrogen peroxide: water is 1:1:3), so that organic matters on the surface are further removed;
step three: cleaning the surface of the semiconductor chip by using a mixed solution of hydrofluoric acid and hydrogen chloride (hydrofluoric acid: hydrogen chloride: water is 1:2:10) to remove an oxide layer;
step four: cleaning the surface of the semiconductor chip by adopting a mixed solution of hydrogen chloride and ozone (hydrogen chloride: ozone: water is 1:3:7), and generating hydrophilicity on the surface of the semiconductor chip;
step five: and (5) drying at 40 ℃ to finish cleaning.
Looking over the semiconductor chips obtained in the first to fifth embodiments, the organic matters and the oxide layers on the surfaces are treated cleanly, the effect is more obvious than that of the traditional cleaning method, hydrophilicity is generated on the surfaces, metal pollution can be avoided, the probability of secondary metal pollution is greatly reduced, and the service life is ensured.
Although embodiments of the present invention have been shown and described, it will be understood by those skilled in the art that various changes, modifications, substitutions and alterations can be made therein without departing from the principles and spirit of the invention, the scope of which is defined in the appended claims and their equivalents.
Claims (2)
1. A cleaning method of a semiconductor chip is characterized in that: the method comprises the following steps:
step one: cleaning the surface of the semiconductor chip by adopting ozonated DI water, and setting the temperature to 60-70 ℃ to remove organic matters on the surface, wherein the concentration of the ozonated DI water is 0.5ppm;
Step two: then the temperature is reduced to normal temperature, the surface of the semiconductor chip is cleaned again by sulfuric acid and hydrogen peroxide mixed solution, and organic matters on the surface are further removed, wherein sulfuric acid in the sulfuric acid and hydrogen peroxide mixed solution is as follows: hydrogen peroxide: the ratio of water is 1:1:3;
step three: cleaning the surface of the semiconductor chip by using a mixed solution of hydrofluoric acid and hydrogen chloride to remove an oxide layer, wherein the hydrofluoric acid in the mixed solution of hydrofluoric acid and hydrogen chloride is as follows: hydrogen chloride: the ratio of water is 1:2:10;
Step four: the method comprises the steps of cleaning the surface of a semiconductor chip by adopting a mixed solution of hydrogen chloride and ozone, and generating hydrophilicity on the surface of the semiconductor chip, wherein the mixed solution of hydrogen chloride and ozone comprises the following components: ozone: the ratio of water is 1:3:7;
step five: and (5) performing drying operation at the temperature of 40-50 ℃ to finish cleaning.
2. The method for cleaning a semiconductor chip according to claim 1, wherein: the first step to the fourth step are all carried out in a vacuum environment.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010984685.3A CN113764259B (en) | 2020-09-18 | 2020-09-18 | Method for cleaning semiconductor chip |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010984685.3A CN113764259B (en) | 2020-09-18 | 2020-09-18 | Method for cleaning semiconductor chip |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN113764259A CN113764259A (en) | 2021-12-07 |
| CN113764259B true CN113764259B (en) | 2024-05-07 |
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| CN202010984685.3A Active CN113764259B (en) | 2020-09-18 | 2020-09-18 | Method for cleaning semiconductor chip |
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003173998A (en) * | 2001-12-04 | 2003-06-20 | Wacker Nsce Corp | Method for cleaning semiconductor substrate |
| JP2004089971A (en) * | 2002-08-29 | 2004-03-25 | Nittetu Chemical Engineering Ltd | Heating treatment method of ozone water |
| KR20040060568A (en) * | 2002-12-30 | 2004-07-06 | 주식회사 하이닉스반도체 | Method for removing a growth particle on the photo-mask |
| JP2007042889A (en) * | 2005-08-03 | 2007-02-15 | Siltronic Ag | Method for preventing boron pollution on surface of silicon wafer |
| CN110681624A (en) * | 2019-09-02 | 2020-01-14 | 山西烁科晶体有限公司 | Final cleaning method for silicon carbide single crystal polished wafer substrate |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1601703A (en) * | 2003-09-27 | 2005-03-30 | 旺宏电子股份有限公司 | Method of cleaning hydrogen-oxygen radical of wafer surface by super-pure water |
| CN101979160B (en) * | 2010-05-21 | 2014-05-14 | 北京天科合达蓝光半导体有限公司 | Method for cleaning pollutants on surface of silicon carbide wafer |
| JP2012109290A (en) * | 2010-11-15 | 2012-06-07 | Kurita Water Ind Ltd | Silicon wafer cleaning method and silicon wafer cleaning device |
-
2020
- 2020-09-18 CN CN202010984685.3A patent/CN113764259B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003173998A (en) * | 2001-12-04 | 2003-06-20 | Wacker Nsce Corp | Method for cleaning semiconductor substrate |
| JP2004089971A (en) * | 2002-08-29 | 2004-03-25 | Nittetu Chemical Engineering Ltd | Heating treatment method of ozone water |
| KR20040060568A (en) * | 2002-12-30 | 2004-07-06 | 주식회사 하이닉스반도체 | Method for removing a growth particle on the photo-mask |
| JP2007042889A (en) * | 2005-08-03 | 2007-02-15 | Siltronic Ag | Method for preventing boron pollution on surface of silicon wafer |
| CN110681624A (en) * | 2019-09-02 | 2020-01-14 | 山西烁科晶体有限公司 | Final cleaning method for silicon carbide single crystal polished wafer substrate |
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| Publication number | Publication date |
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| CN113764259A (en) | 2021-12-07 |
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