CN115247259A - Vibration type powder atomic layer deposition device - Google Patents
Vibration type powder atomic layer deposition device Download PDFInfo
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- CN115247259A CN115247259A CN202110455657.7A CN202110455657A CN115247259A CN 115247259 A CN115247259 A CN 115247259A CN 202110455657 A CN202110455657 A CN 202110455657A CN 115247259 A CN115247259 A CN 115247259A
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- 239000000843 powder Substances 0.000 title claims abstract description 67
- 238000000231 atomic layer deposition Methods 0.000 title claims abstract description 40
- 239000002243 precursor Substances 0.000 claims abstract description 16
- 238000005086 pumping Methods 0.000 claims abstract description 11
- 238000007789 sealing Methods 0.000 claims description 17
- 238000010438 heat treatment Methods 0.000 claims description 9
- 238000000605 extraction Methods 0.000 claims description 4
- 239000012530 fluid Substances 0.000 claims description 4
- 239000007789 gas Substances 0.000 description 88
- 239000002096 quantum dot Substances 0.000 description 35
- 239000010409 thin film Substances 0.000 description 10
- 239000000463 material Substances 0.000 description 6
- 239000002105 nanoparticle Substances 0.000 description 5
- 239000012495 reaction gas Substances 0.000 description 3
- 239000000565 sealant Substances 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 238000003756 stirring Methods 0.000 description 3
- 238000012546 transfer Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 230000003139 buffering effect Effects 0.000 description 2
- 239000012159 carrier gas Substances 0.000 description 2
- 238000005137 deposition process Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000003292 glue Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
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- 238000005054 agglomeration Methods 0.000 description 1
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- 238000013459 approach Methods 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000007664 blowing Methods 0.000 description 1
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 239000000284 extract Substances 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 239000011553 magnetic fluid Substances 0.000 description 1
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- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
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- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4417—Methods specially adapted for coating powder
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
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- General Chemical & Material Sciences (AREA)
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Abstract
The invention provides a vibration type powder atomic layer deposition device which mainly comprises a vacuum cavity, a shaft seal device, a driving unit and a vibration device. The driving unit is connected with the rear wall of the vacuum cavity through a shaft seal device and drives the vacuum cavity to rotate. The shaft seal device comprises an outer tube body and an inner tube body, wherein the inner tube body is arranged in the accommodating space of the outer tube body. At least one gas pumping line and at least one gas inlet line are positioned in the inner tube body, wherein the gas pumping line is used for pumping gas in the reaction space of the vacuum cavity body, and the gas inlet line is used for conveying a precursor to the reaction space. The vibration device is adjacent to the rear wall or the side wall of the vacuum cavity and is used for knocking the rear wall or the side wall of the vacuum cavity so as to prevent powder in the reaction space from being adhered to the inner surface of the vacuum cavity.
Description
Technical Field
The invention relates to a vibration type powder atomic layer deposition device, which comprises a vibration device, wherein the vibration device is adjacent to the rear wall or the side wall of a vacuum cavity and is used for knocking the rear wall or the side wall of the vacuum cavity so as to prevent powder in the vacuum cavity from being sticky.
Background
Nanoparticles (nanoparticles) are generally defined as particles smaller than 100 nm in at least one dimension, which are physically and chemically distinct from macroscopic materials. In general, the physical properties of macroscopic materials are independent of their size, but nanoparticles are not, and thus have potential applications in biomedical, optical, and electronic fields.
Quantum dots (Quantum dots) are nanoparticles of semiconductors, and the currently studied semiconductor materials are II-VI materials, such as ZnS, cdS, cdSe, etc., of which CdSe is the most drawing attention. The size of the quantum dot is usually between 2 and 50 nm, and after the quantum dot is irradiated by ultraviolet rays, electrons in the quantum dot absorb energy and transition from a valence band to a conduction band. The excited electrons release energy by luminescence when they return from the conduction band to the valence band.
The energy gap of the quantum dot is related to the size of the quantum dot, the larger the size of the quantum dot is, the smaller the energy gap is, the longer wavelength light can be emitted after irradiation, and the smaller the size of the quantum dot is, the larger the energy gap is, the shorter wavelength light can be emitted after irradiation. For example, 5 to 6 nm quantum dots emit orange or red light, while 2 to 3 nm quantum dots emit blue or green light, depending on the material composition of the quantum dots.
Light generated by a Light Emitting Diode (LED) using quantum dots can approach a continuous spectrum, and at the same time, has high color rendering properties, and is advantageous for improving the light emitting quality of the LED. In addition, the wavelength of the emitted light can be adjusted by changing the size of the quantum dots, so that the quantum dots become the development focus of a new generation of light-emitting devices and displays.
Although the quantum dots have the advantages and characteristics, the quantum dots are easy to agglomerate in the application or manufacturing process. In addition, the quantum dots have higher surface activity and are easy to react with air and water vapor, so that the service life of the quantum dots is shortened.
In particular, when quantum dots are made into the sealant of the light emitting diode, an agglomeration effect may be generated, thereby reducing the optical performance of the quantum dots. In addition, after the quantum dots are manufactured into the sealant of the light emitting diode, external oxygen or moisture may still penetrate through the sealant to contact the surfaces of the quantum dots, so that the quantum dots are oxidized, and the efficiency or the service life of the quantum dots and the light emitting diode is affected. Surface defects and dangling bonds (dangling bonds) of the quantum dots can also cause non-radiative recombination (non-radiative recombination), which also affects the luminous efficiency of the quantum dots.
At present, atomic Layer Deposition (ALD) is mainly used to form a thin film with a thickness of nanometers on the surface of the quantum dot, or to form multiple thin films on the surface of the quantum dot, so as to form the quantum well structure.
The atomic layer deposition can form a thin film with uniform thickness on the substrate, can effectively control the thickness of the thin film, and is theoretically suitable for three-dimensional quantum dots. When the quantum dots are placed on the carrier plate, contact points exist between adjacent quantum dots, so that precursors for atomic layer deposition cannot contact the contact points, and a thin film with uniform thickness cannot be formed on the surfaces of all the nano-particles.
Disclosure of Invention
In order to solve the above problems encountered in the prior art, the present invention provides a vibration-type atomic layer deposition apparatus for powder, wherein a vibration device is disposed on a rear wall or a side wall of a vacuum chamber, and the rear wall or the side wall of the vacuum chamber is knocked by the vibration device to vibrate an inner surface of the vacuum chamber, so as to shake off the powder adhered to the inner surface of the vacuum chamber during deposition.
The present invention provides a vibration type atomic layer deposition device for powder, which mainly comprises a driving unit, a shaft sealing device, a vacuum chamber and a vibration device, wherein the driving unit is connected to a rear wall of the vacuum chamber through the shaft sealing device. The vibrating device is adjacent to the rear wall of the vacuum cavity and is used for knocking the rear wall or the side wall of the vacuum cavity to enable the vacuum cavity to generate vibration so as to remove powder stuck on the inner surface of the vacuum cavity.
Generally, during the atomic layer deposition process, a uniform thin film may not be formed on the surface of the powder adhered to the vacuum chamber, which may affect the yield, lifetime and performance of the powder. Therefore, the invention provides that the rear wall or the side wall of the vacuum cavity is knocked by the vibrating device to prevent the powder from being stuck on the inner surface of the vacuum cavity.
In order to achieve the above object, the present invention provides a vibratory atomic layer deposition apparatus, comprising: a vacuum chamber including a front wall, a rear wall and a side wall, wherein the front wall faces the rear wall and is connected to the rear wall via the side wall, and a reaction space is formed among the front wall, the rear wall and the side wall and is used for accommodating a plurality of powders; a shaft sealing device connected with the back wall of the vacuum cavity and comprising an outer tube and an inner tube, wherein the outer tube is provided with a containing space for containing the inner tube; the driving unit is connected with the shaft sealing device and drives the vacuum cavity to rotate through the shaft sealing device; at least one gas extraction pipeline positioned in the inner pipe body, is in fluid connection with the reaction space of the vacuum cavity and is used for extracting gas in the reaction space; at least one gas inlet pipeline, which is positioned in the inner tube body, is in fluid connection with the reaction space of the vacuum cavity and is used for conveying a precursor gas to the reaction space; and the vibration device is adjacent to the rear wall or the side wall of the vacuum cavity and is used for knocking the rear wall or the side wall of the vacuum cavity.
The vibration type powder atomic layer deposition device comprises a motor and a knocking part, wherein the motor is connected with the knocking part and drives the knocking part to knock the rear wall or the side wall of the vacuum cavity.
The vibration type powder atomic layer deposition device is characterized in that the vibration device comprises a buffering part connected with a knocking part, and the knocking part knocks the rear wall or the side wall of the vacuum cavity through the buffering part.
The gas inlet pipeline comprises at least one non-reactive gas delivery pipeline and at least one reactive gas delivery pipeline, the non-reactive gas delivery pipeline is used for delivering a non-reactive gas to the reaction space so as to blow the powder in the reaction space, and the reactive gas delivery pipeline is used for delivering a precursor gas to the reaction space.
The vibrating atomic layer deposition device for powder is characterized in that the non-reaction gas conveying pipeline comprises an extension pipeline, and the extension pipeline is positioned in the reaction space and extends towards the front wall of the vacuum cavity.
The vibrating powder atomic layer deposition device comprises a filter unit positioned at one end of an inner pipe body connected with a reaction space, an air exhaust pipeline is in fluid connection with the reaction space through the filter unit, and an extension pipeline penetrates through the filter unit.
The vibrating powder atomic layer deposition device is characterized in that the extension pipeline comprises at least one air outlet facing to the direction of the front wall or the side wall of the vacuum cavity.
The vibrating powder atomic layer deposition device is characterized in that the inner tube body extends from the accommodating space of the outer tube body to the reaction space of the vacuum cavity body, and a protruding tube part is formed in the reaction space.
The vibrating powder atomic layer deposition device comprises a heating unit which is adjacent to the side wall of the vacuum cavity and used for heating the powder in the vacuum cavity.
The vibrating powder atomic layer deposition device is characterized in that the gas inlet pipeline is used for conveying a non-reaction gas to the reaction space and blowing the powder in the reaction space by the non-reaction gas.
The invention has the beneficial effects that: the utility model provides a novel strike formula powder atomic layer deposition device, mainly set up a vibrator at the back wall or the lateral wall of vacuum chamber to strike the back wall or the lateral wall of vacuum chamber through the rapping device, so that be stained with the powder vibrations that glues on the internal surface of vacuum chamber in the deposition process and fall.
Drawings
FIG. 1 is a schematic perspective view of a vibratory atomic layer deposition apparatus according to an embodiment of the present invention.
FIG. 2 is a schematic cross-sectional view of an exemplary embodiment of a vibratory atomic layer deposition apparatus according to the present invention.
FIG. 3 is a schematic cross-sectional view of a shaft sealing device of the vibratory atomic layer deposition apparatus according to an embodiment of the present invention.
FIG. 4 is a schematic sectional view of an apparatus for vibratory atomic layer deposition of powder according to another embodiment of the present invention.
FIG. 5 is a schematic cross-sectional view of another embodiment of the vibratory atomic layer deposition apparatus of the present invention.
Description of reference numerals: 10-a vibratory powder atomic layer deposition apparatus; 11-vacuum chamber; 111-front wall; 113-rear wall; 115-side walls; 117-a cover plate; 119-a cavity; 12-a reaction space; 121-powder; 13-a shaft seal device; 130-a projecting tube portion; 131-an outer body; 132-an accommodating space; 133-an inner tube; 134-a connection space; 139-a filtration unit; 14-a vibrating device; 141-a motor; 143-a knock section; 145-a buffer; 15-a drive unit; 16-a heating device; 171-a suction line; 172-an extension line; 1721-air outlet; 173-an air intake line; 175-non-reactive gas delivery line; 177-a heater; 179-temperature sensing unit; 191-a carrier; 193-first support frame; 195-a second support.
Detailed Description
Referring to fig. 1, fig. 2 and fig. 3, a schematic perspective view, a schematic cross-sectional view and a schematic cross-sectional view of a shaft sealing device of a vibratory atomic layer deposition apparatus according to an embodiment of the present invention are respectively shown. As shown in the figure, the vibration type atomic layer deposition device 10 mainly includes a vacuum chamber 11, a shaft sealing device 13, a driving unit 15 and a vibration device 14, wherein the driving unit 15 is connected to the vacuum chamber 11 through the shaft sealing device 13 and drives the vacuum chamber 11 to rotate.
The vacuum chamber 11 includes a front wall 111, a rear wall 113 and a side wall 115, wherein the front wall 111 faces the rear wall 113, and the side wall 115 is located between the front wall 111 and the rear wall 113 and connects the front wall 111 and the rear wall 113 to form a reaction space 12 between the front wall 111, the rear wall 113 and the side wall 115.
The reaction space 12 is used for accommodating a plurality of powders 121, wherein the powders 121 may be Quantum dots (Quantum dots), such as ZnS, cdS, cdSe, and other II-VI semiconductor materials, and the thin film formed on the Quantum dots may be aluminum oxide (Al 2O 3). In one embodiment of the present invention, the vacuum chamber 11 may include a cover 117 and a chamber 119, wherein the cover 117 is used to cover and connect with the chamber 119 to form the reaction space 12 therebetween. The lid 117 may be the front wall 111 of the vacuum chamber 11, while the chamber 119 is formed by the back wall 113 and the side walls 115 of the vacuum chamber 11.
The shaft seal device 13 is connected to the rear wall 113 of the vacuum chamber 11 and includes an outer tube 131 and an inner tube 133, wherein the outer tube 131 has an accommodating space 132, and the inner tube 133 has a connecting space 134, for example, the outer tube 131 and the inner tube 133 may be hollow cylinders. The accommodating space 132 of the outer tube 131 is used for accommodating the inner tube 133, wherein the outer tube 131 and the inner tube 133 are coaxially disposed. The shaft seal device 13 can be a common shaft seal or a magnetic fluid shaft seal, and is mainly used to isolate the reaction space 12 of the vacuum chamber 11 from the external space to maintain the vacuum of the reaction space 12.
The driving unit 15 connects one end of the shaft sealing device 13, and the other end of the shaft sealing device 13 connects the rear wall 113 of the vacuum chamber 11. The driving unit 15 drives the vacuum chamber 11 to rotate through the shaft sealing device 13, for example, the driving unit 15 is a motor, and is connected to the rear wall 113 of the vacuum chamber 11 through the outer tube 131, and drives the vacuum chamber 11 to rotate through the outer tube 131. In addition, the driving unit 15 is not connected to the inner tube 133, so that the inner tube 133 does not rotate when the driving unit 15 drives the outer tube 131 and the vacuum chamber 11 to rotate.
The driving unit 15 can drive the outer tube 131 and the vacuum chamber 11 to rotate continuously in the same direction, such as clockwise or counterclockwise. In various embodiments, the driving unit 15 can drive the outer tube 131 and the vacuum chamber 11 to rotate clockwise by a specific angle and then rotate counterclockwise by a specific angle, for example, the specific angle can be 360 degrees. The vacuum chamber 11 stirs the powder 121 in the reaction space 12 during rotation, so that the powder 121 is uniformly heated and contacts with the precursor or the non-reactive gas.
At least one pumping line 171, at least one gas inlet line 173, at least one non-reactive gas delivery line 175, a heater 177 and/or a temperature sensing unit 179 may be disposed in the connection space 134 of the inner tube 133, as shown in fig. 2 and 3.
The gas pumping line 171 is fluidly connected to the reaction space 12 of the vacuum chamber 11 and is used for pumping out the gas in the reaction space 12, so that the reaction space 12 is in a vacuum state for performing the atomic layer deposition process. Specifically, the gas exhaust line 171 may be connected to a pump, and the gas in the reaction space 12 is exhausted by the pump.
The gas inlet line 173 is fluidly connected to the reaction space 12 of the vacuum chamber 11 and is configured to deliver a precursor and/or a non-reactive gas to the reaction space 12, wherein the non-reactive gas may be an inert gas such as nitrogen or argon. In practice, the gas inlet line 173 may deliver a carrier gas (carrier gas) and precursors into the reaction space 12. The gas inlet line 173 also delivers non-reactive gases into the reaction space 12 and evacuates them through the evacuation line 171 to remove the precursors from the reaction space 12. In one embodiment of the present invention, the gas inlet line 173 may be connected to a plurality of branch lines, and may sequentially deliver different precursors into the reaction space 12 through each branch line.
The gas inlet line 173 may increase the flow rate of the non-reactive gas supplied to the reaction space 12 and blow the powder 121 in the reaction space 12 by the non-reactive gas so that the powder 121 is diffused to various regions of the reaction space 12 by the non-reactive gas.
In one embodiment of the present invention, the gas inlet line 173 may include at least one non-reactive gas delivery line 175 and at least one reactive gas delivery line. The non-reactive gas delivery line 175 is fluidly connected to the reaction space 12 of the vacuum chamber 11 and serves to deliver a non-reactive gas to the reaction space 12. The non-reactive gas is used to blow the powder 121 in the reaction space 12, and the driving unit 15 is used to drive the vacuum chamber 11 to rotate, so as to effectively and uniformly stir the powder 121 in the reaction space 12 and deposit a thin film with uniform thickness on the surface of each powder 121. The reactant gas delivery line is fluidly connected to the reaction space 12 and is configured to deliver the precursor to the reaction space 12.
The vacuum chamber 11 is driven to rotate by the driving unit 15 via the shaft sealing device 13 and the non-reactive gas is delivered to the reaction space 12 through the gas inlet line 173, although the powder 121 in the reaction space 12 may be stirred. However, in practical applications, a certain amount of the powder 121 may stick to the inner surface of the vacuum chamber 11, so that the precursor transported to the reaction space 12 cannot contact the powder 121 sticking to the vacuum chamber 11, and a thin film with a uniform thickness cannot be formed on all surfaces of the powder 121.
In order to solve the above-mentioned problems and the problems encountered in the prior art, the present invention proposes to provide a vibrating device 14 on the side of the rear wall 113 or the side wall 115 of the vacuum chamber 11, wherein the vibrating device 14 is adjacent to the rear wall 113 or the side wall 115 of the vacuum chamber 11 and is used for striking the rear wall 113 or the side wall 115 of the vacuum chamber 11.
When the vibrating device 14 strikes the rear wall 113 or the side wall 115 of the vacuum chamber 11, the vacuum chamber 11 vibrates, so that the sticky powder 121 leaves the inner surface of the vacuum chamber 11 and scatters in the reaction space 12 of the vacuum chamber 11.
Specifically, the driving unit 15, the air inlet line 173 and the vibration device 14 are arranged to effectively solve the problem that the powder 121 sticks to the vacuum chamber 11, and to facilitate the formation of a thin film with a uniform thickness on the surface of most of the powder 121.
In an embodiment of the present invention, the vibrating device 14 includes a motor 141 and a knocking portion 143, wherein the motor 141 is connected to and drives the knocking portion 143 to knock the rear wall 113 or the side wall 115 of the vacuum chamber 11. In addition, a buffer portion 145 may be disposed on the striking portion 143, wherein the striking portion 143 strikes the rear wall 113 or the side wall 115 of the vacuum chamber 11 through the buffer portion 145 to prevent damage to the vacuum chamber 11 and/or the vibration device 14 during striking the vacuum chamber 11, for example, the buffer portion 145 may be a rubber pad.
In one embodiment of the present invention, as shown in fig. 2, the vibrating device 14 is adjacent to the sidewall 115 of the vacuum chamber 11 and is used to strike the sidewall 115 of the vacuum chamber 11. In various embodiments, as shown in fig. 4, the vibrating device 14 is adjacent to the rear wall 113 of the vacuum chamber 11 and is used to strike the rear wall 113 of the vacuum chamber 111.
The vibrating device 14 of the present invention is adjacent to the sidewall 115 or the rear wall 113 of the vacuum chamber 11, which does not interfere with the moving line for removing or installing the vacuum chamber 11 and/or the cover plate 117, and facilitates the design and configuration of the vibrating powder ald device 10.
The gas inlet line 173 and the non-reactive gas delivery line 175 of the vibratory atomic layer deposition apparatus 10 are used to deliver non-reactive gas to the reaction space 12, wherein the gas inlet line 173 delivers a smaller flow of non-reactive gas to remove the precursor in the reaction space 12, and the non-reactive gas delivery line 175 delivers a larger flow of non-reactive gas to blow the powder 121 in the reaction space 12.
Specifically, the gas inlet line 173 and the non-reactive gas transfer line 175 may transfer the non-reactive gas to the reaction space 12 at different time points, so that the non-reactive gas transfer line 175 may not be provided in practical applications, and the flow rate of the non-reactive gas transferred by the gas inlet line 173 at different time points may be adjusted. When the precursor in the reaction space 12 is to be removed, the flow rate of the non-reactive gas delivered to the reaction space 12 by the gas inlet line 173 is reduced, and when the powder 121 in the reaction space 12 is to be blown, the flow rate of the non-reactive gas delivered to the reaction space 12 by the gas inlet line 173 is increased.
When the driving unit 15 of the present invention drives the outer tube 131 and the vacuum chamber 11 to rotate, the inner tube 133, the pumping line 171, the gas inlet line 173, and/or the non-reactive gas delivery line 175 therein do not rotate, which is beneficial to improving the stability of the non-reactive gas and/or precursor delivered to the reaction space 12 by the gas inlet line 173 and/or the non-reactive gas delivery line 175.
The heater 177 is used for heating the connection space 134 and the inner tube 133, and heating the pumping line 171, the gas inlet line 173 and/or the non-reactive gas transporting line 175 in the inner tube 133 to increase the temperature of the gas in the pumping line 171, the gas inlet line 173 and/or the non-reactive gas transporting line 175. The temperature sensing unit 179 is used to measure the temperature of the heater 177 or the connection space 134 to obtain the operating status of the heater 177.
A filter unit 139 may be disposed at one end of the inner pipe 133 connected to the reaction space 12, wherein the gas pumping line 171, the gas inlet line 173 and/or the non-reactive gas delivery line 175 in the inner pipe 133 are fluidly connected to the reaction space 12 of the vacuum chamber 11 through the filter unit 139.
The gas extraction line 171 is connected to the reaction space 12 through the filter unit 139, so that the powder 121 in the reaction space 12 can be prevented from being extracted together when the gas extraction line 171 extracts the gas in the reaction space 12, and the loss of the powder 121 can be reduced.
In one embodiment of the present invention, as shown in fig. 4, the gas inlet line 173 and/or the non-reactive gas transporting line 175 may extend from the connecting space 134 of the inner tube 133 of the shaft sealing device 13 to the reaction space 12 of the vacuum chamber 11, wherein the gas inlet line 173 and/or the non-reactive gas transporting line 175 extending to the reaction space 12 may be defined as an extending line 172. The extension line 172 may pass through the filter unit 139 and extend to the reaction space 12. In addition, a heating device 16 may be disposed inside, outside or around the vacuum chamber 11, wherein the heating device 16 is adjacent to or in contact with the sidewall 115 of the vacuum chamber 11 and is used to heat the vacuum chamber 11 and the reaction space 12.
In one embodiment of the present invention, the gas inlet 173, the non-reactive gas delivery line 175 and/or the extension line 172, which are disposed in the reaction space 12, extend toward the front wall 111 of the vacuum chamber 11. In various embodiments, the gas inlet line 173, the non-reactive gas delivery line 175 and/or the extension line 172 located in the reaction space 12 may also be bent and extended toward the side wall 115 and/or the rear wall 113 of the vacuum chamber 11. The extension line 172 may further include at least one outlet 1721, wherein the outlet 1721 faces the front wall 111 and/or the sidewall 115 of the vacuum chamber.
In another embodiment of the present invention, the extension line 172 may continuously supply the non-reactive gas to the reaction space 12 and may adjust the flow rate of the non-reactive gas. Specifically, the mode in which the extension line 172 outputs the non-reactive gas may include a stirring mode in which the flow rate of the non-reactive gas output from the extension line 172 is large and the powder 121 in the reaction space 12 may be stirred by the output non-reactive gas, and a general mode. The flow rate of the non-reactive gas output from the extension line 172 in the normal mode is small, and the powder 121 in the reaction space 12 may not be agitated, but the non-reactive gas output in the normal mode forms a positive pressure at the air outlet 1721 of the extension line 172 to prevent the powder 121 from entering the extension line 172 through the air outlet 1721.
In an embodiment of the present invention, the vibratory ald apparatus 10 may include a carrying portion 191 for carrying the driving unit 15, the vacuum chamber 11, the shaft sealing device 13 and/or the vibrating device 14. For example, the bearing portion 191 is connected to the driving unit 15, the vacuum chamber 11 is connected to the bearing portion 191 through at least one first support frame 193, and the vibration device 14 is connected to the bearing portion 191 through at least one second support frame 195.
In an embodiment of the present invention, as shown in fig. 5, the inner tube 133 of the shaft sealing device 13 can extend from the accommodating space 132 of the outer tube 131 to the reaction space 12 of the vacuum chamber 11, such that the inner tube 133 forms a protruding tube 130 in the reaction space 12.
The invention has the advantages that:
the utility model provides a novel strike formula powder atomic layer deposition device, mainly set up a vibrator at the back wall or the lateral wall of vacuum chamber to strike the back wall or the lateral wall of vacuum chamber through the rapping device, so that be stained with the powder vibrations that glues on the internal surface of vacuum chamber in the deposition process and fall.
The above description is only a preferred embodiment of the present invention, and is not intended to limit the scope of the present invention, i.e., all equivalent variations and modifications in the shape, structure, characteristics and spirit of the present invention described in the claims should be included in the scope of the present invention.
Claims (10)
1. A vibratory powder atomic layer deposition apparatus, comprising:
a vacuum chamber including a front wall, a rear wall and a side wall, wherein the front wall faces the rear wall and is connected to the rear wall via the side wall, and a reaction space is formed among the front wall, the rear wall and the side wall and is used for accommodating a plurality of powders;
a shaft sealing device connected with the back wall of the vacuum cavity and comprising an outer tube and an inner tube, wherein the outer tube is provided with a containing space for containing the inner tube;
a driving unit connected to the shaft seal device and driving the vacuum chamber to rotate via the shaft seal device;
at least one gas extraction line located in the inner tube body, fluidly connected to the reaction space of the vacuum chamber, and used for extracting a gas in the reaction space;
at least one gas inlet pipeline, which is positioned in the inner tube body, is in fluid connection with the reaction space of the vacuum cavity and is used for conveying a precursor gas to the reaction space; and
and the vibration device is adjacent to the rear wall or the side wall of the vacuum cavity and is used for knocking the rear wall or the side wall of the vacuum cavity.
2. The vibratory powder ALD apparatus of claim 1, wherein the vibration device comprises a motor and a knocking portion, the motor is connected to the knocking portion and drives the knocking portion to knock the rear wall or the side wall of the vacuum chamber.
3. The vibratory powder ALD apparatus of claim 2, wherein the vibration device includes a buffer portion connected to the striking portion, the striking portion striking the rear wall or the side wall of the vacuum chamber through the buffer portion.
4. The vibratory powder atomic layer deposition apparatus of claim 1 wherein the gas inlet line comprises at least one non-reactive gas delivery line for delivering a non-reactive gas to the reaction space to blow the powder within the reaction space and at least one reactive gas delivery line for delivering the precursor gas to the reaction space.
5. The vibratory powder ALD apparatus of claim 4 wherein the non-reactive gas delivery line includes an extension line disposed in the reaction space and extending in a direction toward the front wall of the vacuum chamber.
6. The vibratory atomic layer deposition apparatus according to claim 5, further comprising a filter unit disposed at an end of the inner tube fluidly connected to the reaction space, wherein the pumping line is fluidly connected to the reaction space via the filter unit, and the extension line passes through the filter unit.
7. The vibratory powder ALD apparatus of claim 5 wherein the extension line includes at least one vent oriented toward the front wall or the side wall of the vacuum chamber.
8. The vibratory powder ald apparatus of claim 1, wherein the inner tube extends from the receiving space of the outer tube to the reaction space of the vacuum chamber, and a protruding tube is formed in the reaction space.
9. The apparatus of claim 1 further comprising a heating unit adjacent to the sidewall of the vacuum chamber for heating the powder in the vacuum chamber.
10. The vibratory atomic layer deposition apparatus of claim 1 wherein the gas inlet line is configured to deliver a non-reactive gas to the reaction space and to blow the powder in the reaction space with the non-reactive gas.
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| CN202110455657.7A CN115247259A (en) | 2021-04-26 | 2021-04-26 | Vibration type powder atomic layer deposition device |
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| CN202110455657.7A CN115247259A (en) | 2021-04-26 | 2021-04-26 | Vibration type powder atomic layer deposition device |
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