CN112626495B

CN112626495B - Atomic layer deposition device capable of blowing powder

Info

Publication number: CN112626495B
Application number: CN202011280481.8A
Authority: CN
Inventors: 林俊成; 张容华; 古家诚
Original assignee: Xintianhong Xiamen Technology Co ltd
Current assignee: Xintianhong Xiamen Technology Co ltd
Priority date: 2020-11-16
Filing date: 2020-11-16
Publication date: 2022-06-10
Anticipated expiration: 2040-11-16
Also published as: CN112626495A

Abstract

The invention provides an atomic layer deposition device capable of blowing powder, which mainly comprises a vacuum cavity, a shaft seal device and a driving unit, wherein the driving unit drives the vacuum cavity to rotate through the shaft seal device. The shaft seal device comprises an outer tube body and an inner tube body, wherein the inner tube body is arranged in the accommodating space of the outer tube body. The at least one air suction pipeline and the at least one air inlet pipeline are positioned in the inner pipe body, wherein the air inlet pipeline extends from the inner pipe body to the reaction space and is used for conveying a non-reaction gas to the reaction space so as to blow the powder in the reaction space.

Description

Atomic layer deposition device capable of blowing powder

Technical Field

The invention relates to an atomic layer deposition device capable of blowing powder, wherein at least one air inlet pipeline extends into a reaction space of a vacuum cavity from a shaft seal device and is used for conveying a non-reaction gas to the reaction space so as to blow the powder in the reaction space.

Background

Nanoparticles (nanoparticles) are generally defined as particles smaller than 100 nm in at least one dimension, which are physically and chemically distinct from macroscopic materials. In general, the physical properties of macroscopic materials are independent of their size, but nanoparticles are not, and thus have potential applications in biomedical, optical, and electronic fields.

Quantum dots (Quantum dots) are nanoparticles of semiconductors, and the currently studied semiconductor materials are II-VI materials, such as ZnS, CdS, CdSe, etc., of which CdSe is the most drawing attention. The size of the quantum dot is usually between 2 and 50 nm, and after the quantum dot is irradiated by ultraviolet rays, electrons in the quantum dot absorb energy and transition from a valence band to a conduction band. The excited electrons release energy by luminescence when they return from the conduction band to the valence band.

The energy gap of the quantum dot is related to the size of the quantum dot, the larger the size of the quantum dot is, the smaller the energy gap is, the longer wavelength light can be emitted after irradiation, and the smaller the size of the quantum dot is, the larger the energy gap is, the shorter wavelength light can be emitted after irradiation. For example, 5 to 6 nm quantum dots emit orange or red light, while 2 to 3 nm quantum dots emit blue or green light, depending on the material composition of the quantum dots.

The light generated by a Light Emitting Diode (LED) using quantum dots can approach a continuous spectrum, and has high color rendering property, which is beneficial to improving the light emitting quality of the LED. In addition, the wavelength of the emitted light can be adjusted by changing the size of the quantum dots, so that the quantum dots become the development focus of a new generation of light-emitting devices and displays.

Although the quantum dots have the advantages and characteristics, the quantum dots are easy to agglomerate in the application or manufacturing process. In addition, the quantum dots have higher surface activity and are easy to react with air and water vapor, so that the service life of the quantum dots is shortened.

Specifically, when the quantum dots are made into the sealant of the light emitting diode, an agglomeration effect may be generated, which reduces the optical performance of the quantum dots. In addition, after the quantum dots are manufactured into the sealant of the light emitting diode, external oxygen or moisture may still penetrate through the sealant to contact the surface of the quantum dots, which may oxidize the quantum dots and affect the performance or the service life of the quantum dots and the light emitting diode. Surface defects and dangling bonds (dangling bonds) of the quantum dots can also cause non-radiative recombination (non-radiative recombination), which also affects the luminous efficiency of the quantum dots.

At present, the quantum well structure is formed by forming a thin film with a thickness of nanometer on the surface of the quantum dot through Atomic Layer Deposition (ALD), or forming a plurality of thin films on the surface of the quantum dot.

The atomic layer deposition can form a thin film with uniform thickness on the substrate, can effectively control the thickness of the thin film, and is theoretically suitable for three-dimensional quantum dots. When the quantum dots are placed on the carrier plate, contact points exist between adjacent quantum dots, so that precursors for atomic layer deposition cannot contact the contact points, and a thin film with uniform thickness cannot be formed on the surfaces of all the nano-particles.

Disclosure of Invention

In order to solve the problems of the prior art, the present invention provides an atomic layer deposition apparatus capable of blowing powder, wherein at least one gas inlet line extends from a shaft sealing device into a reaction space of a vacuum chamber, and non-reaction gas blown from the gas inlet line blows powder in the reaction space, so as to facilitate forming a thin film with uniform thickness on the surface of each powder.

An objective of the present invention is to provide an atomic layer deposition apparatus capable of blowing powder, which mainly includes a driving unit, a shaft sealing device and a vacuum chamber, wherein the vacuum chamber has a columnar reaction space. The columnar reaction space comprises two bottom surfaces and at least one side surface, wherein the side surface is connected with the two bottom surfaces. The air inlet pipeline arranged in the shaft sealing device extends to the reaction space and extends towards the side surface of the reaction space, so that the air outlet of the air inlet pipeline is close to the powder positioned at the lower half part of the vacuum cavity, and the powder is favorably blown by the non-reaction gas output by the air inlet pipeline.

In addition, when the temperature of the powder is measured by the temperature sensing unit, the non-reaction gas conveyed by the air inlet pipeline blows and lifts the powder in the reaction space, so that the temperature sensing unit can accurately measure the temperature of the powder.

An object of the present invention is to provide an atomic layer deposition apparatus capable of blowing powder, wherein an air inlet line extends from a shaft seal device into a reaction space, and an extension line is formed in the reaction space. The extension line of the air outlet of the extension pipeline forms an included angle with the side surface of the reaction space, and non-reaction gas is output towards the direction obliquely below the reaction space so as to blow the powder in the reaction space.

An object of the present invention is to provide an atomic layer deposition apparatus capable of blowing powder, in which an extension line passes through an inner tube or a filter unit on the inner tube and extends to a reaction space of a vacuum cavity. In addition, the extension line extends towards the side of the reaction space, wherein the air outlet of the extension line faces the shaft seal device or the cover plate, and blows out the non-reaction gas towards the direction of the shaft seal device or the cover plate.

In order to achieve the above object, the present invention provides an atomic layer deposition apparatus capable of blowing powder, including: a vacuum chamber including a reaction space for accommodating a plurality of powders; a shaft sealing device, which comprises an outer tube and an inner tube, wherein the outer tube is provided with a containing space for containing the inner tube; the driving unit is connected with the vacuum cavity through the shaft seal device and drives the vacuum cavity to rotate through the shaft seal device; at least one gas extraction pipeline positioned in the inner pipe body, is in fluid connection with the reaction space of the vacuum cavity and is used for extracting gas in the reaction space; and at least one gas inlet pipeline extending from the inner pipe body into the reaction space and extending towards one surface of the reaction space for conveying a non-reactive gas to the reaction space, wherein the non-reactive gas is used for blowing powder in the reaction space.

The atomic layer deposition device capable of blowing powder comprises a reaction space, a gas inlet pipeline, a gas outlet pipeline and a gas outlet pipeline, wherein the reaction space comprises two bottom surfaces and at least one side surface, the side surface is connected with the two bottom surfaces, and the gas inlet pipeline extends towards the direction of the side surface of the reaction space.

The atomic layer deposition device capable of blowing powder comprises at least one non-reactive gas delivery line extending from the inner tube into the reaction space and extending towards the side of the reaction space for delivering the non-reactive gas to the reaction space to blow the powder in the reaction space with the non-reactive gas.

The atomic layer deposition apparatus capable of blowing the powder, wherein the non-reactive gas delivery line includes an extension line, and the extension line is located in the reaction space and extends in a direction of a side surface of the reaction space.

The atomic layer deposition device capable of blowing the powder is characterized in that the extension pipeline comprises an air outlet facing to the direction of the shaft seal device, and the air outlet outputs non-reaction gas to blow the powder in the reaction space.

The atomic layer deposition device capable of blowing the powder comprises a vacuum cavity and an extension pipeline, wherein the vacuum cavity comprises a cavity and a cover plate, the cover plate is used for covering the cavity and forming a reaction space between the cavity and the cover plate, the extension pipeline comprises an air outlet facing the direction of the cover plate, and the air outlet outputs non-reaction gas to blow the powder in the reaction space.

The atomic layer deposition device capable of blowing powder is provided, wherein the gas inlet pipeline delivers a precursor to the reaction space.

The atomic layer deposition device capable of blowing the powder comprises an outer tube body, an inner tube body and a vacuum cavity body, wherein the outer tube body is arranged in the vacuum cavity body, the inner tube body extends from the containing space of the outer tube body to the reaction space of the vacuum cavity body, and a protruding tube part is formed in the reaction space.

The atomic layer deposition apparatus capable of blowing the powder, wherein the extension line passes through the inner tube body of the protruding tube part and extends toward the side of the reaction space.

The atomic layer deposition device capable of blowing the powder comprises a filter unit positioned at one end of an inner pipe body connected with the reaction space, an air suction pipeline is in fluid connection with the reaction space through the filter unit, and an extension pipeline penetrates through the filter unit and extends towards the side face of the reaction space.

The invention has the beneficial effects that: at least one air inlet pipeline extends into the reaction space of the vacuum cavity body from the shaft sealing device, and non-reaction gas blown out through the air inlet pipeline blows powder in the reaction space, so that a film with uniform thickness is formed on the surface of each powder.

Drawings

FIG. 1 is a schematic perspective view of an atomic layer deposition apparatus capable of blowing powder according to an embodiment of the invention.

FIG. 2 is a schematic cross-sectional view of an atomic layer deposition apparatus capable of blowing powder according to an embodiment of the invention.

FIG. 3 is a schematic cross-sectional view of a shaft sealing device of an atomic layer deposition apparatus capable of blowing powder according to an embodiment of the present invention.

FIG. 4 is a schematic cross-sectional view of an atomic layer deposition apparatus capable of blowing powder according to another embodiment of the invention.

FIG. 5 is a schematic cross-sectional view of an atomic layer deposition apparatus capable of blowing powder according to another embodiment of the invention.

FIG. 6 is a schematic cross-sectional view of an atomic layer deposition apparatus capable of blowing powder according to another embodiment of the invention.

Description of reference numerals: 10-an atomic layer deposition device capable of blowing powder; 11-a vacuum chamber; 111-a cover plate; 1111-inner surface; 113-a cavity; 115-monitor wafer; 12-a reaction space; 121-powder; 122-a bottom surface; 124-side; 13-a shaft seal device; 130-a protruding tube portion; 131-an outer body; 132-a containing space; 133-an inner tube; 134-a connection space; 139-a filtration unit; 14-a gear; 15-a drive unit; 16-a heating device; 171-a suction line; 172-extension line; 1721-air outlet; 173-an air intake line; 175-non-reactive gas delivery line; 177-a heater; 179-temperature sensing unit; 191-a carrier plate; 193-fixed mount; 195-a connecting shaft.

Detailed Description

Referring to fig. 1, fig. 2 and fig. 3, a schematic perspective view, a schematic cross-sectional exploded view and a schematic cross-sectional view of a shaft sealing device of an atomic layer deposition apparatus capable of blowing powder according to an embodiment of the invention are respectively shown. As shown in the figure, the atomic layer deposition apparatus 10 capable of blowing powder mainly includes a vacuum chamber 11, a shaft seal device 13 and a driving unit 15, wherein the driving unit 15 is connected to the vacuum chamber 11 through the shaft seal device 13 and drives the vacuum chamber 11 to rotate.

The vacuum chamber 11 has a reaction space 12 for accommodating a plurality of powders 121, wherein the powders 121 may be Quantum dots (Quantum dots), such as ZnS, CdS, CdSe, and other II-VI semiconductor materials, and the thin film formed on the Quantum dots may be aluminum oxide (Al2O 3). The vacuum chamber 11 may include a cover 111 and a chamber 113, wherein an inner surface 1111 of the cover 111 covers the chamber 113 and forms a reaction space 12 therebetween.

In an embodiment of the present invention, a monitor wafer 115 may be disposed on the inner surface 1111 of the cover plate 111, and the monitor wafer 115 is located in the reaction space 12 when the cover plate 111 covers the chamber 113. When atomic layer deposition is performed in the reaction space 12, a thin film is formed on the surface of the monitor wafer 115. In practical applications, the film thickness on the surface of the wafer 115 and the film thickness on the surface of the powder 121 may be further measured and monitored, and the relationship between the two may be calculated. The film thickness on the surface of the wafer 115 may then be monitored by metrology to convert to a film thickness on the surface of the powder 121.

The shaft sealing device 13 includes an outer tube 131 and an inner tube 133, wherein the outer tube 131 has a receiving space 132, and the inner tube 133 has a connecting space 134, for example, the outer tube 131 and the inner tube 133 may be hollow cylinders. The accommodating space 132 of the outer tube 131 is used for accommodating the inner tube 133, wherein the outer tube 131 and the inner tube 133 are coaxially disposed. The shaft seal device 13 can be a common shaft seal or a magnetic fluid shaft seal, and is mainly used to isolate the reaction space 12 of the vacuum chamber 11 from the external space to maintain the vacuum of the reaction space 12.

The driving unit 15 is connected to one end of the shaft sealing device 13 and drives the vacuum chamber 11 to rotate through the shaft sealing device 13, for example, the outer tube 131 is connected to the vacuum chamber 11 and drives the vacuum chamber 11 to rotate through the outer tube 131. In addition, the driving unit 15 is not connected to the inner tube 133, so that the inner tube 133 does not rotate when the driving unit 15 drives the outer tube 131 and the vacuum chamber 11 to rotate.

The driving unit 15 can drive the outer tube 131 and the vacuum chamber 11 to rotate continuously in the same direction, for example, clockwise or counterclockwise. In various embodiments, the driving unit 15 can drive the outer tube 131 and the vacuum chamber 11 to rotate clockwise by a specific angle and then rotate counterclockwise by a specific angle, for example, the specific angle can be 360 degrees. The vacuum chamber 11 stirs the powder 121 in the reaction space 12 while rotating, so that the powder 121 is uniformly heated and contacts with the precursor or the non-reactive gas.

In an embodiment of the invention, the driving unit 15 can be a motor, and is connected to the outer tube 131 through at least one gear 14, and drives the outer tube 131 and the vacuum chamber 11 to rotate relative to the inner tube 133 through the gear 14.

At least one pumping line 171, at least one gas inlet line 173, at least one non-reactive gas delivery line 175, a heater 177 and/or a temperature sensing unit 179 may be disposed in the connection space 134 of the inner tube 133, as shown in fig. 2 and 3.

The gas pumping line 171 is fluidly connected to the reaction space 12 of the vacuum chamber 11 and is used for pumping out the gas in the reaction space 12, so that the reaction space 12 is in a vacuum state for performing the atomic layer deposition process. Specifically, the gas exhaust line 171 may be connected to a pump, and the gas in the reaction space 12 is exhausted by the pump.

The gas inlet line 173 is fluidly connected to the reaction space 12 of the vacuum chamber 11 and is used for delivering a precursor or a non-reactive gas to the reaction space 12, wherein the non-reactive gas may be an inert gas such as nitrogen or argon. For example, the gas inlet line 173 may be connected to a precursor storage tank and a non-reactive gas storage tank through a valve set and deliver the precursor into the reaction space 12 through the valve set so that the precursor deposits on the surface of the powder 121. In practice, the gas inlet line 173 may deliver a carrier gas (carrier gas) and precursors into the reaction space 12. Non-reactive gases are then delivered into reaction space 12 through a set of valves and pumped through pumping line 171 to remove the precursors from reaction space 12. In one embodiment of the present invention, the gas inlet line 173 may be connected to a plurality of branch lines, and may sequentially deliver different precursors into the reaction space 12 through each branch line.

The gas inlet line 173 may increase the flow rate of the non-reactive gas supplied to the reaction space 12 and blow the powder 121 in the reaction space 12 by the non-reactive gas, so that the powder 121 is diffused to various regions of the reaction space 12 by the non-reactive gas.

In one embodiment of the present invention, the gas inlet line 173 may include at least one non-reactive gas delivery line 175 fluidly connected to the reaction space 12 of the vacuum chamber 11 and configured to deliver a non-reactive gas to the reaction space 12, for example, the non-reactive gas delivery line 175 may be connected to a nitrogen storage tank through a valve set and deliver nitrogen to the reaction space 12 through the valve set. The non-reactive gas is used to blow the powder 121 in the reaction space 12, and the driving unit 15 is used to drive the vacuum chamber 11 to rotate, so as to effectively and uniformly stir the powder 121 in the reaction space 12 and deposit a thin film with uniform thickness on the surface of each powder 121.

The gas inlet line 173 and the non-reactive gas delivery line 175 of the atomic layer deposition apparatus 10 for blowing powder are used to deliver non-reactive gas to the reaction space 12, wherein the gas inlet line 173 delivers a smaller flow of non-reactive gas to primarily remove the precursor in the reaction space 12, and the gas delivery line 175 delivers a larger flow of non-reactive gas to primarily blow the powder 121 in the reaction space 12.

Specifically, the gas inlet line 173 and the non-reactive gas transfer line 175 may transfer the non-reactive gas to the reaction space 12 at different time points, so that the non-reactive gas transfer line 175 may not be provided in practical applications, and the flow rate of the non-reactive gas transferred by the gas inlet line 173 at different time points may be adjusted. When the precursor in the reaction space 12 is to be removed, the flow rate of the non-reactive gas delivered to the reaction space 12 by the gas inlet line 173 is reduced, and when the powder 121 in the reaction space 12 is to be blown, the flow rate of the non-reactive gas delivered to the reaction space 12 by the gas inlet line 173 is increased.

When the driving unit 15 of the present invention drives the outer tube 131 and the vacuum chamber 11 to rotate, the inner tube 133, the pumping line 171, the gas inlet line 173, and/or the non-reactive gas delivery line 175 therein do not rotate, which is beneficial to improving the stability of the non-reactive gas and/or precursor delivered to the reaction space 12 by the gas inlet line 173 and/or the non-reactive gas delivery line 175.

The heater 177 is used to heat the connecting space 134 and the inner tube 133, and the gas extraction line 171, the gas inlet line 173 and/or the non-reactive gas transporting line 175 in the inner tube 133 are heated by the heater 177 to increase the temperature of the gas in the gas extraction line 171, the gas inlet line 173 and/or the non-reactive gas transporting line 175. For example, the temperature of the non-reactive gas and/or precursor delivered to the reaction space 12 by the gas inlet line 173 may be increased, and the temperature of the non-reactive gas delivered to the reaction space 12 by the non-reactive gas delivery line 175 may be increased. So that the temperature of the reaction space 12 is not substantially reduced or changed when the non-reactive gas and/or the precursor enters the reaction space 12. In addition, the temperature of the heater 177 or the connection space 134 can be measured by the temperature sensing unit 179 to know the operating state of the heater 177. Of course, another heating device 16 is usually disposed inside, outside or around the vacuum chamber 11, as shown in FIG. 5, wherein the heating device 16 is adjacent to or in contact with the vacuum chamber 11 and is used to heat the vacuum chamber 11 and the reaction space 12.

In the embodiment of the present invention, the gas inlet line 173 and/or the non-reactive gas delivery line 175 extends from the inner tube 133 of the shaft sealing device 13 to the reaction space 12 of the vacuum chamber 11 and extends toward a surface of the reaction space 12. For example, the gas inlet line 173 and/or the non-reactive gas delivery line 175 extend from the connecting space 134 of the inner body 133 to the reaction space 12 of the vacuum body 11, wherein the gas inlet line 173 and/or the non-reactive gas delivery line 175 extending to the reaction space 12 may be defined as an extension line 172.

In one embodiment of the present invention, the reaction space 12 may be a cylindrical body and includes two bottom surfaces 122 and at least one side surface 124, wherein the side surface 124 connects the two bottom surfaces 122. The gas inlet line 173, the non-reactive gas delivery line 175 and/or the extension line 172 in the reaction space 12 extend toward the side 124 of the reaction space 12, for example, toward the side 124 in the lower half of the reaction space 12.

The extension line 172 may include an outlet 1721, wherein the outlet 1721 faces the shaft seal device 13, and blows the non-reactive gas from the outlet 1721 toward the shaft seal device 13 to blow the powder 121. As shown in fig. 2, in an embodiment of the present invention, the extension line 172 has a substantially U-shaped appearance and includes three segments and two inflection angles, wherein the inflection angles are about 90 degrees. The first segment of the extension line 172 is connected to the gas inlet line 173 and/or the non-reactive gas delivery line 175 in the inner pipe 13, and extends toward the cover plate 111 or the bottom surface 122 of the reaction space 12. A second section of the extension line 172 connects the first section with a turning angle between the second section and the first section, and the second section extends in the direction of the side 124 of the reaction space 12. The third section of the extension line 172 connects the second sections and extends in the direction of the other bottom surface 122 of the reaction space 12 or the shaft seal arrangement 13.

In various embodiments, the turning angle between the second segment and the third segment of the extension line 172 may be greater than 90 degrees, so that the extension line of the air outlet 1721 forms an included angle with the side surface 124 of the reaction space 12 and outputs the non-reaction gas in a direction obliquely downward of the reaction space 12 to blow the powder 121 in the reaction space 12, as shown in fig. 5 and 6. The air outlet 1721 of fig. 5 faces the shaft seal device 13, and the air outlet 1721 of fig. 6 faces the cover plate 111.

In an embodiment of the present invention, the extension line 172 may be a straight line, for example, the extension line 172 includes only one segment and extends from the shaft seal device 13 toward the cover plate 111 to shorten the distance between the air outlet 1721 of the extension line 172 and the cover plate 111. In addition, the extension line 172 may be arc-shaped, and the corner is rounded. In another embodiment of the present invention, the extension line 172 includes four segments and three turning angles, as shown in fig. 5. The extension line 172 may also include two segments and a corner, as shown in FIG. 6. Specifically, the number and angle of the segments and the inflection angles of the extension line 172 are not limitations of the scope of the present invention.

Generally, a filter unit 139 is disposed at one end of the inner tube 133 connected to the reaction space 12, wherein the gas pumping line 171, the gas inlet line 173 and/or the non-reactive gas delivery line 175 in the inner tube 133 are fluidly connected to the reaction space 12 of the vacuum chamber 11 through the filter unit 139.

By the arrangement of the filtering unit 139, it is avoided that the powder 121 in the reaction space 12 is extracted together when the gas extraction line 171 extracts the gas in the reaction space 12, and the powder 121 is also prevented from leaving the reaction space 12 through the gas inlet line 173 and/or the non-reactive gas delivery line 175 to cause the loss of the powder 121.

In an embodiment of the present invention, the extension line 172 can pass through the filter unit 139 and extend to the reaction space 12, wherein the air outlet 1721 of the extension line 172 faces the shaft sealing device 13, as shown in fig. 2. In another embodiment of the present invention, the extension line 172 passes through the filter unit 139 and extends to the reaction space 12, wherein the air outlet 1721 of the extension line 172 faces the cover plate 111, as shown in fig. 4.

In an embodiment of the present invention, the inner tube 133 of the shaft sealing device 13 can extend from the accommodating space 132 of the outer tube 131 to the reaction space 12 of the vacuum chamber 11, such that the inner tube 133 forms a protruding tube 130 in the reaction space 12. The extension line 172 can pass through the inner tube 133 on the protruding tube portion 130 and extend toward the side 124 of the reaction space 12, wherein the air outlet 1721 of the extension line 172 can face the shaft sealing device 13 or the cover plate 111, as shown in fig. 5 and 6.

In practical applications, the height of the air outlet 1721 of the extension line 172 can be adjusted, or the amount of the powder 121 in the reaction space 12 can be controlled, so that the powder 121 in the reaction space 12 does not cover the air outlet 1721 of the extension line 172 when the vacuum chamber 11 is standing and does not rotate, thereby reducing the loss of the powder 121. In addition, another filter unit may be disposed at the air outlet 1721 of the extension line 172 to further reduce the loss of the powder 121.

In another embodiment of the present invention, the extension line 172 may continuously supply the non-reactive gas to the reaction space 12, and may adjust the flow rate of the non-reactive gas. Specifically, the mode in which the extension line 172 outputs the non-reactive gas may include an agitation mode in which the flow rate of the non-reactive gas output from the extension line 172 is large and the powder 121 in the reaction space 12 may be agitated by the output non-reactive gas, and a general mode. The flow rate of the non-reactive gas output from the extension line 172 in the normal mode is small, and the powder 121 in the reaction space 12 may not be agitated, but the non-reactive gas output in the normal mode forms a positive pressure at the air outlet 1721 of the extension line 172 to prevent the powder 121 from entering the extension line 172 through the air outlet 1721.

In an embodiment of the present invention, the atomic layer deposition apparatus 10 capable of blowing powder may also include a supporting plate 191 and at least one fixing frame 193, wherein the supporting plate 191 may be a plate for supporting the driving unit 15, the vacuum chamber 11 and the shaft sealing device 13. For example, the carrier plate 191 is connected to the driving unit 15, and the sealing device 13 and the vacuum chamber 11 are connected by the driving unit 15. In addition, the shaft seal device 13 and/or the vacuum chamber 11 can also be connected to the bearing plate 191 through at least one support frame to improve the stability of the connection.

The bearing plate 191 may be connected to the fixing frame 193 through at least one connecting shaft 195, wherein the number of the fixing frames 193 may be two, and the two fixing frames are respectively disposed at two sides of the bearing plate 191. The bearing plate 191 can rotate relative to the fixing frame 193 by taking the shaft 195 as an axis to change the elevation angles of the driving unit 15, the shaft sealing device 13 and the vacuum chamber 11, so as to form a film with uniform thickness on the surface of each powder 121.

The invention has the advantages that:

at least one air inlet pipeline extends into the reaction space of the vacuum cavity body from the shaft seal device, and the powder in the reaction space is blown by the non-reaction gas blown out by the air inlet pipeline, so that a film with uniform thickness is formed on the surface of each powder

The above description is only a preferred embodiment of the present invention, and is not intended to limit the scope of the present invention, i.e., all equivalent variations and modifications in the shape, structure, characteristics and spirit of the present invention described in the claims should be included in the scope of the present invention.

Claims

1. An atomic layer deposition apparatus that blows a powder, comprising:

a vacuum chamber including a reaction space for accommodating a plurality of powders;

a shaft sealing device, which comprises an outer tube and an inner tube, wherein the outer tube has a containing space for containing the inner tube;

the driving unit is connected with the vacuum cavity through the outer pipe body of the shaft seal device and drives the vacuum cavity to rotate through the shaft seal device, and when the driving unit drives the outer pipe body and the vacuum cavity to rotate, the inner pipe body cannot rotate along with the outer pipe body and the vacuum cavity;

at least one gas extraction line positioned in the inner tube body, fluidly connected to the reaction space of the vacuum chamber, and used for extracting a gas in the reaction space; and

at least one gas inlet pipeline, located in the inner tube body, extending from the inner tube body into the reaction space and extending towards a surface of the reaction space, for delivering a non-reactive gas to the reaction space, wherein the non-reactive gas is used for blowing the powder in the reaction space.

2. The atomic layer deposition apparatus according to claim 1, wherein the reaction space comprises two bottom surfaces and at least one side surface, the side surface connecting the two bottom surfaces, and the gas inlet line extends in the direction of the side surface of the reaction space.

3. The atomic layer deposition apparatus according to claim 2, wherein the gas inlet line comprises at least one non-reactive gas delivery line extending from the inner tube into the reaction space and toward the side of the reaction space for delivering the non-reactive gas to the reaction space to blow the powder in the reaction space with the non-reactive gas.

4. The atomic layer deposition apparatus according to claim 3, wherein the non-reactive gas delivery line comprises an extension line, the extension line is located in the reaction space and extends toward the side of the reaction space.

5. The atomic layer deposition apparatus according to claim 4, wherein the extension line includes an outlet opening facing the shaft sealing device, and the non-reactive gas is output from the outlet opening to blow the powder in the reaction space.

6. The atomic layer deposition apparatus according to claim 4, wherein the vacuum chamber comprises a chamber and a cover plate covering the chamber and forming the reaction space therebetween, and the extension line comprises an outlet facing the cover plate and outputting the non-reactive gas from the outlet to blow the powder in the reaction space.

7. The atomic layer deposition device according to claim 1, wherein the gas inlet line delivers a precursor to the reaction space.

8. The atomic layer deposition apparatus according to claim 4, wherein the inner tube extends from the receiving space of the outer tube to the reaction space of the vacuum chamber, and forms a protruding tube in the reaction space.

9. The atomic layer deposition apparatus according to claim 8, wherein the extension line passes through the inner tube of the protruding tube portion and extends in a direction of the side of the reaction space.

10. The atomic layer deposition apparatus according to claim 4, comprising a filter unit at an end of the inner tube fluidly connected to the reaction space, wherein the pumping line is fluidly connected to the reaction space via the filter unit, and wherein the extension line extends through the filter unit and extends in a direction of the side of the reaction space.