CN214383794U - Powder atomic layer deposition device with special cover plate design - Google Patents

Abstract

The utility model provides a powder atomic layer deposition device with special apron design mainly includes a vacuum cavity, a shaft seal device and a drive unit, and wherein drive unit passes through the bearing seal device and drives the vacuum cavity rotation. The vacuum chamber comprises a cover plate and a chamber body, wherein the inner surface of the cover plate covers the chamber body. At least one fan blade unit and a monitoring wafer are arranged on the inner surface of the cover plate, wherein the monitoring wafer is positioned between the fan blade unit and the cover plate, and a gap exists between the monitoring wafer and the fan blade unit. An air inlet pipeline blows air to the fan blade unit of the cover plate, the air is driven by the fan blade unit to diffuse to each area of the reaction space, so that the air blows powder in the reaction space, and a film with uniform thickness is formed on the surfaces of the powder and the monitoring wafer.

Description

Powder atomic layer deposition device with special cover plate design

Technical Field

The utility model relates to a powder atomic layer deposition device with special apron design mainly sets up a flabellum unit on vacuum cavity's apron for drive gas blows the powder in the reaction space, is favorable to forming the film of even thickness on the surface of powder and control wafer.

Background

Nanoparticles (nanoparticles) are generally defined as particles smaller than 100 nm in at least one dimension, which are physically and chemically distinct from macroscopic materials. In general, the physical properties of macroscopic materials are independent of their size, but nanoparticles are not, and thus have potential applications in biomedical, optical, and electronic fields.

Quantum dots (Quantum dots) are nanoparticles of semiconductors, and the currently studied semiconductor materials are II-VI materials, such as ZnS, CdS, CdSe, etc., of which CdSe is the most drawing attention. The size of the quantum dot is usually between 2 and 50 nm, and after the quantum dot is irradiated by ultraviolet rays, electrons in the quantum dot absorb energy and transition from a valence band to a conduction band. The excited electrons release energy by luminescence when they return from the conduction band to the valence band.

The energy gap of the quantum dot is related to the size of the quantum dot, the larger the size of the quantum dot is, the smaller the energy gap is, the longer wavelength light can be emitted after irradiation, and the smaller the size of the quantum dot is, the larger the energy gap is, the shorter wavelength light can be emitted after irradiation. For example, 5 to 6 nm quantum dots emit orange or red light, while 2 to 3 nm quantum dots emit blue or green light, depending on the material composition of the quantum dots.

The light generated by a Light Emitting Diode (LED) using quantum dots can approach a continuous spectrum, and has high color rendering property, which is beneficial to improving the light emitting quality of the LED. In addition, the wavelength of the emitted light can be adjusted by changing the size of the quantum dots, so that the quantum dots become the development focus of a new generation of light-emitting devices and displays.

Although the quantum dots have the advantages and characteristics described above, they are easily agglomerated during the manufacturing process. In addition, the quantum dots have higher surface activity and are easy to react with air and water vapor, so that the service life of the quantum dots is shortened.

Specifically, in the process of manufacturing the quantum dots as the sealant of the light emitting diode, an agglomeration effect may be generated, thereby reducing the optical performance of the quantum dots. In addition, after the quantum dots are manufactured into the sealant of the light emitting diode, external oxygen or moisture may still penetrate through the sealant to contact the surface of the quantum dots, which may oxidize the quantum dots and shorten the performance or service life of the quantum dots and the light emitting diode. In addition, surface defects and dangling bonds (dangling bonds) of quantum dots can also cause nonradiative recombination.

Currently, the quantum well structure is formed by forming a thin film with a thickness of nanometer on the surface of the quantum dot by Atomic Layer Deposition (ALD), or forming a plurality of thin films on the surface of the quantum dot.

The atomic layer deposition can form a film with uniform thickness on the substrate, can effectively control the thickness of the film, and is theoretically suitable for three-dimensional quantum dots. When the quantum dots are placed on the carrier plate, contact points exist between adjacent quantum dots, so that precursor gas for atomic layer deposition cannot contact the contact points, and a thin film with uniform thickness cannot be formed on the surfaces of all the nano-particles.

SUMMERY OF THE UTILITY MODEL

In order to solve the problems of the prior art, the utility model provides a powder atomic layer deposition device with special cover plate design, which is mainly characterized in that a fan blade unit is arranged on the inner surface of the cover plate of the vacuum cavity. The gas input into the reaction space is blown to the fan blade unit, and the gas is driven to each area of the reaction space through the fan blade unit, so that the powder in the reaction space is fully stirred, and a thin film with uniform thickness is formed on the surface of each powder through an atomic layer deposition process.

An object of the utility model is to provide a powder atomic layer deposition device with special apron design mainly includes a drive unit, a shaft seal device and a vacuum cavity, and wherein drive unit passes through the bearing seal device and connects and drive vacuum cavity and rotate. The vacuum chamber comprises a cover plate and a chamber body, wherein the inner surface of the cover plate covers the chamber body, and a reaction space is formed between the cover plate and the chamber body and is used for containing a plurality of powders. The inner surface of the cover plate is provided with a fan blade unit, and the driving unit can drive the vacuum cavity and the fan blade unit to rotate relative to the air inlet pipeline through the shaft seal device. When the air inlet pipeline blows air to the fan blade units, the rotating fan blade units can drive the air to circulate in the reaction space so as to blow powder in the reaction space. The powder in the reaction space can be fully and uniformly stirred by the rotation of the vacuum cavity and the air blown to the powder by the driving of the fan blade unit.

In addition, the gas inlet pipeline can also convey a precursor gas into the reaction space, wherein the rotating fan blade unit can drive the precursor gas to diffuse to each area of the reaction space and contact with the powder in the reaction space so as to form a film with uniform thickness on the surface of the powder.

An object of the present invention is to provide a powder atomic layer deposition apparatus with a special cover plate design, which mainly comprises a fan blade unit and a monitor wafer disposed on the inner surface of the cover plate of the vacuum chamber, wherein a gap is formed between the fan blade unit and the inner surface of the cover plate and/or the monitor wafer. When atomic layer deposition is carried out on the powder in the reaction space of the vacuum cavity, the precursor gas is in contact with the monitoring wafer through the gap between the fan blade unit and the cover plate, and a thin film is formed on the surface of the monitoring wafer. In practical application, the thickness of the film formed on the surface of the powder can be calculated by measuring and monitoring the thickness of the film on the surface of the wafer.

An object of the present invention is to provide a powder atomic layer deposition apparatus with a special cover plate design, wherein the vacuum chamber includes a cover plate and a chamber, the inner surface of the cover plate is provided with a groove, and a corresponding space is provided in the chamber. The fan blade unit and the monitoring wafer are arranged in the groove of the cover plate, the groove of the cover plate and the space of the cavity form a reaction space, and the fan blade unit and the monitoring wafer are positioned in the reaction space.

In order to achieve the above object, the present invention provides a powder atomic layer deposition apparatus with a special cover plate design, including: a vacuum chamber including a cover plate and a chamber, wherein an inner surface of the cover plate covers the chamber and a reaction space is formed between the cover plate and the chamber; at least one fan blade unit arranged on the inner surface of the cover plate; a shaft seal device connected with the vacuum cavity; the driving unit is connected with the shaft seal device, and the driving unit drives the vacuum cavity to rotate through the shaft seal device; at least one gas extraction line, which is in fluid connection with the reaction space of the vacuum cavity and is used for extracting a gas in the reaction space; and the air inlet pipeline is in fluid connection with the reaction space of the vacuum cavity and is used for conveying a precursor gas or a gas to the reaction space, wherein the air inlet pipeline faces the fan blade unit, blows the gas to the fan blade unit positioned on the inner surface of the cover plate, and drives the gas through the fan blade unit so as to blow the powder in the reaction space.

The powder atomic layer deposition device with the special cover plate design comprises a monitoring wafer, wherein the monitoring wafer is positioned on the inner surface of the cover plate and is positioned between the fan blade unit and the cover plate.

The powder atomic layer deposition device with the special cover plate design comprises a plurality of connecting parts arranged on the inner surface of the cover plate, the connecting parts protrude out of the inner surface of the cover plate, and the fan blade units are arranged on the connecting parts, so that a gap is formed between the fan blade units and the cover plate.

The powder atomic layer deposition device with the special cover plate design is characterized in that the inner surface of the cover plate comprises a groove, and the monitoring wafer and the fan blade unit are positioned in the groove.

The powder atomic layer deposition device with the special cover plate design is characterized in that the groove is a circular wavy groove, a space of the cavity is also a circular wavy groove, and a reaction space formed by the cover plate and the cavity is a circular wavy column.

The powder atomic layer deposition device with the special cover plate design is characterized in that the gas inlet pipeline comprises at least one gas conveying pipeline which is in fluid connection with the reaction space of the vacuum cavity and used for blowing gas to the fan blade units on the inner surface of the cover plate, and the fan blade units drive the gas to blow the powder in the reaction space.

The shaft seal device comprises an outer tube and an inner tube, wherein the outer tube is provided with a containing space for containing the inner tube, and the inner tube is provided with a connecting space for containing the gas pumping pipeline, the gas inlet pipeline and the gas conveying pipeline.

The powder atomic layer deposition device with the special cover plate design comprises a heater and a temperature sensing unit, wherein the heater and the temperature sensing unit are arranged in an inner tube body, the heater is used for heating a connecting space of the inner tube body, and the temperature sensing unit is used for measuring the temperature of the connecting space of the inner tube body.

The powder atomic layer deposition device with the special cover plate design is characterized in that the inner pipe body extends from the accommodating space of the outer pipe body to the reaction space of the vacuum cavity body, a protruding pipe part is formed in the reaction space, and the gas conveying pipeline is located in the inner pipe body and the protruding pipe part and conveys gas to the fan blade unit.

The powder atomic layer deposition device with the special cover plate design is characterized in that the fan blade unit comprises a bottom plate and a plurality of blades, and the fan blades are arranged on the bottom plate and protrude towards the cavity.

The utility model has the advantages that: the inner surface of the cover plate of the vacuum cavity is provided with the fan blade unit, wherein the gas input into the reaction space can be blown to the fan blade unit, and the gas is driven to each area of the reaction space through the fan blade unit, so that the powder in the reaction space is fully stirred, and the uniform-thickness film is formed on the surface of each powder through the atomic layer deposition process.

Drawings

Fig. 1 is a schematic perspective view of an embodiment of a powder atomic layer deposition apparatus with a special cover plate design according to the present invention.

FIG. 2 is a schematic cross-sectional view of an embodiment of the present invention with a special cover plate design for a powder atomic layer deposition apparatus.

FIG. 3 is a schematic cross-sectional view of an embodiment of a shaft seal apparatus of the powder atomic layer deposition apparatus with a special cover plate design according to the present invention.

Fig. 4 is a schematic perspective view of an embodiment of a vacuum chamber of a powder atomic layer deposition apparatus with a special cover plate design according to the present invention.

Fig. 5 is a schematic perspective exploded view of an embodiment of a vacuum chamber of a powder atomic layer deposition apparatus with a special cover plate design according to the present invention.

FIG. 6 is a schematic perspective exploded view of another embodiment of a vacuum chamber of a powder ALD apparatus with a special cover plate design.

FIG. 7 is a schematic perspective view of another embodiment of a vacuum chamber of a powder ALD apparatus having a special cover plate design.

FIG. 8 is a schematic cross-sectional view of another embodiment of the present invention of a powder ALD apparatus with a special cover plate design.

Description of reference numerals: 10-powder atomic layer deposition device with special cover plate design; 11-vacuum chamber; 111-a cover plate; 1111-inner surface; 1113-groove; 113-a cavity; 1131-space; 119-perforating; 12-a reaction space; 121-powder; 13-a shaft seal device; 130-a protruding tube portion; 131-an outer body; 132-a containing space; 133-an inner tube; 134-a connection space; 139-a filtration unit; 14-a gear; 15-a drive unit; 161-fan blade unit; 1611-a mount; 1613-leaf; 162-a gap; 163-monitor wafer; 165-a connecting portion; 171-a suction line; 173-an air intake line; 175-gas delivery line; 177-a heater; 179-temperature sensing unit; 191-a carrier plate; 193-fixed mount; 195-a connecting shaft.

Detailed Description

Please refer to fig. 1, fig. 2, fig. 3 and fig. 4, which are a schematic perspective view, a schematic cross-sectional view of a shaft sealing device of an atomic layer deposition apparatus, and a schematic perspective exploded view of an embodiment of a vacuum chamber of an atomic layer deposition apparatus according to an embodiment of the present invention. As shown in the figure, the powder atomic layer deposition apparatus 10 with a special cover plate design mainly includes a vacuum chamber 11, a shaft seal device 13 and a driving unit 15, wherein the driving unit 15 is connected to the vacuum chamber 11 through the shaft seal device 13 and drives the vacuum chamber 11 to rotate.

The vacuum chamber 11 has a reaction space 12 for accommodating a plurality of powders 121, wherein the powders 121 can be Quantum dots (Quantum dots), for example, ZnS, CdS, CdSe and other II-VI semiconductor materials, and the film formed on the Quantum dots can be aluminum oxide (Al2O3), and the above materials are only embodiments of the present invention, but not limitations of the scope of the present invention.

At least one gas extraction line 171, at least one gas inlet line 173 and/or at least one gas delivery line 175 are fluidly connected to the reaction space 12 of the vacuum chamber 11, for example, the gas extraction line 171, the gas inlet line 173, the gas delivery line 175, a heater 177 and/or a temperature sensing unit 179 may be disposed in the shaft sealing device 13, as shown in FIG. 3. The gas pumping line 171 is fluidly connected to the reaction space 12 of the vacuum chamber 11 and is used for pumping out the gas in the reaction space 12, so that the reaction space 12 is in a vacuum state for performing the subsequent atomic layer deposition process. Specifically, the gas exhaust line 171 may be connected to a pump, and the gas in the reaction space 12 is exhausted by the pump.

The gas inlet line 173 is fluidly connected to the reaction space 12 of the vacuum chamber 11 and is used to deliver a precursor gas or a gas, which may be a non-reactive gas, to the reaction space 12. For example, the gas inlet line 173 may connect a precursor gas storage tank and a non-reactive gas storage tank through a valve set and deliver the precursor gas into the reaction space 12 through the valve set, so that the precursor gas is deposited on the surface of the powder 121. In practice, the gas inlet line 173 may deliver a carrier gas (carrier gas) and precursor gas into the reaction space 12. Non-reactive gases are then delivered into reaction space 12 through a set of valves and pumped through pumping line 171 to remove unreacted precursor gases from reaction space 12. In one embodiment of the present invention, the gas inlet 173 may be connected to a plurality of branch lines, and sequentially deliver different precursor gases into the reaction space 12 through each branch line.

Furthermore, the flow rate of the gas supplied to the reaction space 12 through the gas inlet line 173 can be increased, and the powder 121 in the reaction space 12 is blown by the gas, so that the powder 121 is carried by the gas and diffused to various regions of the reaction space 12.

In one embodiment, the gas inlet line 173 may include at least one gas delivery line 175 fluidly connected to the reaction space 12 of the vacuum chamber 11 and configured to deliver non-reactive gas or gases to the reaction space 12, for example, the gas delivery line 175 may be connected to a nitrogen storage tank through a valve set and deliver nitrogen to the reaction space 12 through the valve set. The gas is used to blow the powder 121 in the reaction space 12, and the driving unit 15 is used to drive the vacuum chamber 11 to rotate, so as to effectively and uniformly stir the powder 121 in the reaction space 12 and deposit a thin film with uniform thickness on the surface of each powder 121.

The gas inlet line 173 and the gas delivery line 175 of the atomic layer deposition apparatus 10 with a special cover plate design are used to deliver gas to the reaction space 12, wherein the gas inlet line 173 delivers a smaller flow rate of gas to remove the precursor gas in the reaction space 12, and the gas delivery line 175 delivers a larger flow rate of gas to blow the powder 121 in the reaction space 12. Furthermore, the gas transported by the gas inlet line 173 and the gas transport line 175 may be different gases.

The gas inlet line 173 and the gas delivery line 175 deliver the gas to the reaction space 12 at different time points, so that the gas delivery line 175 may not be provided in practical use, and the flow rate of the gas delivered by the gas inlet line 173 at different time points may be adjusted. Specifically, when the precursor gas in the reaction space 12 is removed, the flow rate of the gas delivered to the reaction space 12 by the gas inlet line 173 is reduced, and when the powder 121 in the reaction space 12 is blown, the flow rate of the gas delivered to the reaction space 12 by the gas inlet line 173 is increased.

In an embodiment of the present invention, the shaft sealing device 13 includes an outer body 131 and an inner body 133, wherein the outer body 131 has an accommodating space 132, and the inner body 133 has a connecting space 134, for example, the outer body 131 and the inner body 133 may be hollow cylinders. The accommodating space 132 of the outer tube 131 is used for accommodating the inner tube 133, wherein the outer tube 131 and the inner tube 133 are coaxially disposed.

The shaft seal device 13 of the present invention may be a common shaft seal or a magnetic fluid shaft seal, and is mainly used to isolate the reaction space 12 of the vacuum chamber 11 from the external space, so as to maintain the vacuum of the reaction space 12.

In an embodiment of the present invention, a filter unit 139 may be disposed at one end of the inner tube 133 connected to the reaction space 12, wherein the gas exhaust line 171 is fluidly connected to the reaction space 12 via the filter unit 139, and exhausts the gas in the reaction space 12 via the filter unit 139. The filtering unit 139 is mainly used to filter the powder 121 in the reaction space 12 to prevent the powder 121 from entering the air exhaust line 171 during the air exhaust process and causing the loss of the powder 121.

The driving unit 15 is connected to the vacuum chamber 11 through the outer tube 131, and drives the vacuum chamber 11 to rotate through the outer tube 131. In addition, the driving unit 15 is not connected to the inner tube 133, so that when the driving unit 15 drives the outer tube 131 and the vacuum chamber 11 to rotate, the inner tube 133 does not rotate, which is beneficial to maintaining the stability of air suction or air supply of the air suction line 171, the air inlet line 173 and/or the air delivery line 175 in the inner tube 133.

The driving unit 15 can drive the outer tube 131 and the vacuum chamber 11 to rotate continuously in the same direction, for example, clockwise or counterclockwise. In various embodiments, the driving unit 15 can drive the outer tube 131 and the vacuum chamber 11 to rotate clockwise by a specific angle, and then rotate counterclockwise by a specific angle, for example, the specific angle can be 360 degrees. The vacuum chamber 11 stirs the powder 121 in the reaction space 12 during rotation, so as to facilitate the powder 121 to contact with the precursor gas.

In an embodiment of the present invention, the driving unit 15 may be a motor, and is connected to the outer tube 131 through at least one gear 14, and the air pumping line 171, the air intake line 173, the air delivery line 175, the heater 177 and/or the temperature sensing unit 179 may be disposed in the connection space 134 of the inner tube 133, as shown in fig. 2 and 3.

The heater 177 is used for heating the connection space 134 and the inner tube 133, and the gas extraction line 171, the gas inlet line 173 and/or the gas delivery line 175 in the inner tube 133 are heated by the heater 177 to increase the temperature of the gas in the gas extraction line 171, the gas inlet line 173 and/or the gas delivery line 175. For example, the temperature of the gas and/or precursor gases delivered to the reaction space 12 by the gas inlet line 173 may be increased, and the temperature of the gas delivered to the reaction space 12 by the gas delivery line 175 may be increased. Such that the temperature of the reaction space 12 is not substantially reduced or changed when the gases and/or precursor gases enter the reaction space 12. In addition, the temperature of the heater 177 or the connection space 134 can be measured by the temperature sensing unit 179 to know the operating state of the heater 177. Of course, another heating device is usually disposed inside, outside or around the vacuum chamber 11, wherein the heating device is adjacent to or in contact with the vacuum chamber 11 and is used to heat the vacuum chamber 11 and the reaction space 12.

In the embodiment of the present invention, as shown in fig. 2 and 4, the vacuum chamber 11 includes a cover 111 and a chamber 113, wherein an inner surface 1111 of the cover 111 is used to cover the chamber 113 and form a reaction space 12 therebetween.

At least one fan unit 161 is disposed on the inner surface 1111 of the cover plate 111 facing the gas inlet 173 and/or the gas delivery line 175, wherein the gas and/or precursor gas delivered to the reaction space 12 from the gas inlet 173 and/or the gas delivery line 175 is blown toward the fan unit 161, and the gas and/or precursor gas is guided or driven by the fan unit 161 to diffuse to various regions of the reaction space 12, so as to blow the powder 121 in the reaction space 12.

Specifically, when the gas inlet 173 and/or the gas delivery line 175 delivers gas and/or precursor gases to the reaction space 12, the drive unit 15 rotates the vacuum chamber 11 and the blade unit 161 relative to the gas inlet 173 and/or the gas delivery line 175. The rotating fan units 161 function as fans to circulate the gas in the reaction space 12 and lift the powder 121 in the reaction space 12. In addition, the fan unit 161 may be used to drive the precursor gas delivered to the reaction space 12 through the gas inlet line 173, so that the precursor gas is diffused to various regions of the reaction space 12 and contacts the powder 121 in the reaction space 12.

In an embodiment of the present invention, as shown in fig. 5 and 6, the fan unit 161 includes a fixing frame 1611 and a plurality of blades 1613. Specifically, the fixing frame 1611 may be a flat plate or a bracket, and the blade 1613 is disposed on the fixing frame 1611 and protrudes toward the cavity 113.

As shown in fig. 5, the fixing frame 1611 is a circular flat plate, and the blade 1613 is disposed on a surface of the fixing frame 1611, wherein the fixing frame 1611 and the blade 1613 may be formed integrally or may be separate components. As shown in fig. 6, the fixing frame 1611 is a bracket, and the blades 1613 are disposed on the fixing frame 1611, for example, the fixing frame 1611 may include three connecting brackets, and the blades 1613 are connected to the fixing frame 1611 through a connecting shaft, although the number of the connecting brackets and the angle between adjacent connecting brackets are not intended to limit the scope of the present invention. In actual use, the inclined angle between the vane 161 and the fixing frame 1611 can be adjusted according to the flow rate of the gas, the size of the vacuum chamber 11, the size of the vane unit 161, and other factors.

In an embodiment of the present invention, the fan unit 161 is not attached to the inner surface 1111 of the cover plate 111, and a gap 162 is formed between the fan unit 161 and the inner surface 1111 of the cover plate 111. For example, a plurality of connecting portions 165 may be disposed on the inner surface 1111 of the cover plate 111, wherein the connecting portions 165 protrude from the inner surface 1111 of the cover plate 111. The fan unit 161 is disposed on the connecting portion 165, so that a gap 162 is formed between the fan unit 161 and the cover plate 111, for example, a screw hole may be disposed on the connecting portion 165, a corresponding through hole may be disposed on the fan unit 161, and the fan unit 161 may be locked on the connecting portion 165 by a screw.

Furthermore, a monitor wafer 163 may be disposed on the inner surface 1111 of the cover plate 111, the monitor wafer 163 being located between the inner surface 1111 of the cover plate 111 and the fan unit 161, wherein the monitor wafer 163 disposed on the inner surface 1111 of the cover plate 111 is fluidly connected to the reaction space 12 through the gap 162.

In atomic layer deposition of the powder 121 in the reaction space 12, the gas inlet line 173 delivers precursor gas into the reaction space 12 such that the precursor gas contacts the powder 121 in the reaction space 12 and forms a thin film on the surface of the powder 121. The precursor gas delivered to the reaction space 12 also passes through the gap 162 and contacts the monitor wafer 163 on the cover plate 111, thereby forming a thin film on the surface of the monitor wafer 163.

In practical applications, the film thicknesses on the powder 121 and the monitor wafer 163 may be measured, and the relationship between the two may be calculated, for example, a table of the film thicknesses of the powder 121 and the monitor wafer 163 may be prepared. The film thickness on the powder 121 can then be estimated by measuring only the film thickness of the monitor wafer 163.

Specifically, one end of the connecting portion 165 is provided with an external thread protrusion, and the inner surface 1111 of the cover plate 111 is provided with a fixing hole having an internal thread, wherein the connecting portion 165 can be locked on the fixing hole of the cover plate 111. Furthermore, the height of the connecting portion 165 may be changed according to actual conditions or conditions to adjust the size of the gap 162 between the fan unit 161 and the inner surface 1111 of the cover plate 111, for example, the height of the connecting portion 165 may be selected according to the flow rate of the gas delivered to the reaction space 12, the flow rate of the precursor gas, or the amount of the powder 121, so as to facilitate the contact of the precursor gas with the monitoring wafer 163.

In an embodiment of the present invention, a groove 1113 may be disposed on the inner surface 1111 of the cover plate 111, and the fan blade unit 161 and/or the monitor wafer 163 are disposed in the groove 1113. When the cover 111 covers the cavity 113, the recess 1113 of the cover 111 and the space 1131 in the cavity 113 form a reaction space 12.

The recess 1113 of the cover plate 111 and the space 1131 of the cavity 113 may have any geometric shape, such as a polygonal recess, a circular wavy recess, a cylindrical recess, etc. As shown in fig. 4, the groove 1113 of the cover plate 111 is a circular wavy groove, and the space 1131 of the cavity 113 is a circular wavy groove. When the cover 111 is connected to the chamber 113, a circular wavy cylindrical reaction space 12 is formed between the cover 111 and the chamber 113.

The reaction space 12 in the vacuum chamber 11 is designed as a circular wavy cylinder or a polygonal cylinder, which is advantageous for diffusing the gas supplied from the gas supply line 173 or the gas supply line 175 into the reaction space 12 and transferring the gas to various regions, and lifting the powder 121 in the reaction space 12.

In addition, when the reaction space 12 is a circular wavy column or a polygonal column, a portion of the powder 121 rotates along with the vacuum chamber 11 until the powder 121 rotates to a specific angle, and then the powder 121 gradually falls down due to the gravity, so that the powder 121 in the reaction space 12 can be further uniformly and sufficiently stirred.

The groove 1113 is formed on the inner surface 1111 of the cover 111 only for an embodiment of the present invention, and is not intended to limit the scope of the present invention. As shown in fig. 7, the inner surface 1111 of the cover plate 111 may not be provided with the groove 1113, and the fan unit 161 and/or the monitor wafer 163 may be directly disposed on the inner surface 1111 of the cover plate 111.

A through hole 119 is formed on the inner bottom surface of the cavity 113, as shown in fig. 4 and 7, and a portion of the shaft seal device 13 is disposed in the through hole 119, for example, one end of the inner tube 133 of the shaft seal device 13 can be attached to the through hole 119, as shown in fig. 2. In various embodiments, a portion of the shaft sealing device 13 can pass through the through hole 119 and be located in the reaction space 12, for example, a portion of the inner tube 133 of the shaft sealing device 13 passes through the through hole 119 and extends from the receiving space 132 of the outer tube 131 into the reaction space 12, so as to form a protruding tube portion 130 in the reaction space 12, wherein a portion of the pumping line 171, at least one gas inlet line 173 and/or at least one gas delivery line 175 is located in the protruding tube portion 130, as shown in fig. 8.

In an embodiment of the present invention, the powder atomic layer deposition apparatus 10 with a special cover plate design may also include a bearing plate 191 and at least one fixing frame 193, wherein the bearing plate 191 may be a plate body for bearing the driving unit 15, the vacuum chamber 11 and the shaft sealing device 13. For example, the carrier plate 191 is connected to the driving unit 15, and the sealing device 13 and the vacuum chamber 11 are connected by the driving unit 15. In addition, the shaft seal device 13 and/or the vacuum chamber 11 can also be connected to the bearing plate 191 through at least one support frame to improve the stability of the connection.

The bearing plate 191 may be connected to the fixing frame 193 through at least one connecting shaft 195, wherein the number of the fixing frames 193 may be two, and the two fixing frames are respectively disposed at two sides of the bearing plate 191. The bearing plate 191 can rotate relative to the fixing frame 193 by taking the shaft 195 as an axis to change the elevation angles of the driving unit 15, the shaft sealing device 13 and the vacuum chamber 11, so as to form a film with uniform thickness on the surface of each powder 121.

The utility model discloses the advantage:

the inner surface of the cover plate of the vacuum cavity is provided with the fan blade unit, wherein the gas input into the reaction space can be blown to the fan blade unit, and the gas is driven to each area of the reaction space through the fan blade unit, so that the powder in the reaction space is fully stirred, and the uniform-thickness film is formed on the surface of each powder through the atomic layer deposition process.

The foregoing is merely a preferred embodiment of the invention, and is not intended to limit the scope of the invention, which is defined by the appended claims, in which all equivalent changes and modifications in the shapes, constructions, features, and spirit of the invention are intended to be included.

Claims (10)

1. A powder atomic layer deposition apparatus having a special cover plate design, comprising:

the vacuum cavity comprises a cover plate and a cavity body, wherein an inner surface of the cover plate covers the cavity body, and a reaction space is formed between the cover plate and the cavity body;

at least one fan blade unit arranged on the inner surface of the cover plate;

a shaft seal device connected with the vacuum cavity;

the driving unit is connected with the shaft seal device, wherein the driving unit drives the vacuum cavity to rotate through the shaft seal device;

at least one gas extraction line, located in the shaft seal device, fluidly connected to the reaction space of the vacuum chamber, and used for extracting a gas in the reaction space;

at least one air inlet pipeline, located in the shaft seal device, fluidly connected to the reaction space of the vacuum chamber and used for delivering a precursor gas or a gas to the reaction space, wherein the air inlet pipeline faces the fan blade unit, blows the gas to the fan blade unit located on the inner surface of the cover plate, and drives the gas via the fan blade unit to blow the powder in the reaction space; and

and the heater is positioned in the shaft sealing device and used for heating the air suction pipeline and the air inlet pipeline positioned in the shaft sealing device.

2. The atomic layer deposition device according to claim 1, comprising a monitor wafer located on the inner surface of the cover plate and located between the fan unit and the cover plate.

3. The atomic layer deposition apparatus according to claim 2, wherein a plurality of connecting portions are disposed on the inner surface of the cover plate, the connecting portions protrude from the inner surface of the cover plate, and the fan unit is disposed on the connecting portions such that a gap is formed between the fan unit and the cover plate.

4. The atomic layer deposition device according to claim 2, wherein the inner surface of the cover plate comprises a recess, and the monitor wafer and the fan unit are located in the recess.

5. The apparatus of claim 4, wherein the recess is a circular undulating recess, a space of the chamber is a circular undulating recess, and the reaction space formed by the cover plate and the chamber is a circular undulating cylinder.

6. The atomic layer deposition apparatus according to claim 1, wherein the gas inlet line comprises at least one gas delivery line fluidly connected to the reaction space of the vacuum chamber and configured to blow the gas toward the fan unit located on the inner surface of the cover plate, and to drive the gas via the fan unit to blow the powder in the reaction space.

7. The apparatus of claim 6, wherein the shaft seal device comprises an outer tube and an inner tube, the outer tube has a receiving space for receiving the inner tube, and the inner tube has a connecting space for receiving the pumping line, the pumping line and the gas delivery line.

8. The ALD apparatus of claim 7, comprising a temperature sensor unit disposed inside the inner tube for measuring the temperature of the connection space of the inner tube.

9. The apparatus of claim 7, wherein the inner tube extends from the receiving space of the outer tube to the reaction space of the vacuum chamber, and forms a protruding tube in the reaction space, and the gas delivery line is disposed in the inner tube and the protruding tube and delivers the gas to the fan unit.

10. The atomic layer deposition apparatus according to claim 1, wherein the fan unit comprises a holder and a plurality of blades, and the blades are disposed on the holder and protrude toward the cavity.

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