CN217230929U

CN217230929U - Powder atomic layer deposition machine table with down-blowing pipeline

Info

Publication number: CN217230929U
Application number: CN202121706064.5U
Authority: CN
Inventors: 林俊成; 张容华; 古家诚
Original assignee: Xintianhong Xiamen Technology Co ltd
Current assignee: Xintianhong Xiamen Technology Co ltd
Priority date: 2021-07-26
Filing date: 2021-07-26
Publication date: 2022-08-19
Anticipated expiration: 2031-07-26

Abstract

The utility model provides a powder atomic layer deposition board with blow pipeline down mainly includes a vacuum cavity, a shaft seal device and a drive unit, and wherein drive unit connects vacuum cavity via shaft seal device to it rotates to drive vacuum cavity. The vacuum chamber comprises a reaction space and a downblow pipeline, wherein the reaction space is used for containing a plurality of powders, and the downblow pipeline is connected with the reaction space and faces to the bottom of the reaction space. At least one non-reactive gas delivery line is located in the shaft sealing device and is used for connecting with the downward blowing line and delivering a non-reactive gas into the reaction space through the downward blowing line so as to blow the powder deposited at the bottom of the reaction space, thereby being beneficial to forming a film with uniform thickness on the surface of the powder.

Description

Powder atomic layer deposition machine table with down-blowing pipeline

Technical Field

The utility model relates to a powder atomic layer deposition board with blow pipeline down is favorable to forming the even film of thickness on the surface of powder.

Background

Nanoparticles (nanoparticles) are generally defined as particles smaller than 100 nm in at least one dimension, which are physically and chemically distinct from macroscopic materials. In general, the physical properties of macroscopic materials are independent of their size, but nanoparticles are not, and thus have potential applications in biomedical, optical, and electronic fields.

Quantum dots (Quantum dots) are nanoparticles of semiconductor materials, and the currently studied semiconductor materials are II-VI materials, such as ZnS, CdS, CdSe, etc., of which CdSe is the most drawing attention. The size of the quantum dots is usually between 2 and 50 nm, and when the quantum dots are irradiated by ultraviolet rays, electrons in the quantum dots absorb energy and transition from a valence band to a conduction band. The excited electrons release energy by luminescence when they return from the conduction band to the valence band.

The energy gap of the quantum dot is related to the size of the quantum dot, the larger the size of the quantum dot is, the smaller the energy gap is, the longer wavelength light can be emitted after irradiation, and the smaller the size of the quantum dot is, the larger the energy gap is, the shorter wavelength light can be emitted after irradiation. For example, 5 to 6 nm quantum dots emit orange light or red light, and 2 to 3 nm quantum dots emit blue light or green light, although the light color depends on the material composition of the quantum dots.

The light generated by a Light Emitting Diode (LED) using quantum dots is close to a continuous spectrum, and has high color rendering, which is beneficial to improving the light emitting quality of the LED. In addition, the wavelength of the emitted light can be adjusted by changing the size of the quantum dots, so that the quantum dots become the development focus of a new generation of light-emitting devices and displays.

Although the quantum dots have the advantages and characteristics described above, the quantum dots are prone to agglomeration during application or manufacturing. In addition, the quantum dots have higher surface activity and are easy to react with air and moisture, so that the service life of the quantum dots is shortened.

Specifically, when the quantum dots are made into the sealant of the light emitting diode, the agglomeration effect may be generated to reduce the optical performance of the quantum dots. In addition, after the quantum dots are manufactured into the sealant of the light emitting diode, external oxygen or moisture may still penetrate through the sealant to contact the surfaces of the quantum dots, which may oxidize the quantum dots and affect the performance or service life of the quantum dots and the light emitting diode. Defects and dangling bonds (dangling bonds) on the surface of the quantum dot may also cause non-radiative recombination (non-radiative recombination), which also affects the luminous efficiency of the quantum dot.

At present, Atomic Layer Deposition (ALD) is mainly used to form a thin film with a thickness of nanometer on the surface of the quantum dot, or form multiple thin films on the surface of the quantum dot to form a quantum well structure.

The atomic layer deposition can form a thin film with uniform thickness on the substrate, can effectively control the thickness of the thin film, and is theoretically suitable for three-dimensional quantum dots. When the quantum dots are placed on the carrier plate, contact points exist between adjacent quantum dots, so that precursor gas for atomic layer deposition cannot contact the contact points, and a thin film with uniform thickness cannot be formed on the surfaces of all the nano-particles.

SUMMERY OF THE UTILITY MODEL

In order to solve the problems of the prior art, the utility model provides a powder atomic layer deposition board with blow down pipeline can be in atomic layer deposition processing procedure fully stir the powder for each region of vacuum cavity's reaction space is diffused to the powder, in order to do benefit to the film that forms the thickness uniformity on the surface at each powder.

An object of the utility model is to provide a powder atomic layer deposition board with blow pipeline down, mainly include a drive unit, a shaft seal device and a vacuum cavity, wherein drive unit connects and drives the vacuum cavity rotation via the shaft seal device. The vacuum chamber comprises a reaction space and a downblow pipeline, wherein the reaction space is used for containing a plurality of powders, and the downblow pipeline is connected with the reaction space and faces to the bottom or the side wall of the reaction space.

The shaft seal device is internally provided with at least one gas pumping pipeline, at least one gas inlet pipeline and at least one non-reactive gas conveying pipeline, wherein the non-reactive gas conveying pipeline is connected with a downward blowing pipeline of the vacuum cavity and blows a non-reactive gas to the bottom or the side wall of the reaction space through the downward blowing pipeline so as to blow the powder deposited at the bottom of the reaction space. In addition, when the vacuum cavity rotates to a specific angle, the non-reactive gas conveying pipeline is communicated with the downblow pipeline of the vacuum cavity, so that the downblow pipeline is fixed to blow out non-reactive gas towards the specific angle or position in the reaction space.

An object of the utility model is to provide a powder atomic layer deposition board with blow pipeline down, set up in vacuum cavity and/or bearing seal device including a switching space, wherein non-reacting gas conveying line blows the pipeline via switching space connection vacuum cavity's down. The cross-sectional area of the adapter space is larger than that of the non-reactive gas conveying pipeline and the downblow pipeline, so that the non-reactive gas conveying pipeline is aligned to the downblow pipeline through the adapter space, and the non-reactive gas is conveyed to the downblow pipeline through the adapter space.

The adapter space may be an annular space surrounding the inner tube of the shaft sealing device, wherein the non-reactive gas delivery line may continuously deliver the non-reactive gas to the downblow line through the annular adapter space, so that the downblow line may continuously deliver the non-reactive gas into the reaction space of the vacuum chamber and blow the non-reactive gas to various directions of the reaction space.

An object of the utility model is to provide a powder atomic layer deposition board with blow pipeline down, wherein the non-reacting gas conveying line that sets up in the bearing seal device is used for connecting the pipeline of blowing down of vacuum cavity to set up a sealing ring respectively in the both sides of the hookup location of non-reacting gas conveying line and blow down the pipeline.

In order to achieve the above object, the utility model provides a powder atomic layer deposition board with blow pipeline down, include: a driving unit; a shaft seal device connected with the driving unit; a vacuum cavity, connecting shaft seal device, drive unit passes through shaft seal device and drives vacuum cavity and rotate, and vacuum cavity includes: the device comprises a cover plate and a cavity, wherein an inner surface of the cover plate covers the cavity to form a reaction space between the cover plate and the cavity, and a monitoring wafer is arranged on the inner surface of the cover plate, wherein the reaction space is used for accommodating a plurality of powders, and the powders are deposited at the bottom of the reaction space under the action of gravity; and a downblow line connected to the reaction space and facing the bottom of the reaction space; at least one gas extraction pipeline which is positioned in the shaft seal device, is in fluid connection with the reaction space of the vacuum cavity and is used for extracting gas in the reaction space; at least one gas inlet pipeline, which is positioned in the shaft seal device, is in fluid connection with the reaction space of the vacuum cavity and is used for conveying a precursor gas to the reaction space; and at least one non-reactive gas delivery line positioned in the shaft sealing device and used for connecting with a downblow line of the vacuum cavity, wherein the non-reactive gas delivery line is used for delivering a non-reactive gas to the reaction space through the downblow line so as to blow the non-reactive gas to the bottom of the reaction space.

The axial sealing device comprises an outer pipe and an inner pipe, the outer pipe comprises a containing space for containing the inner pipe, and the inner pipe comprises at least one connecting space for containing the gas pumping pipeline, the gas inlet pipeline and the non-reaction gas conveying pipeline.

The powder atomic layer deposition machine with the down-blowing pipeline is characterized in that the non-reaction gas conveying pipeline comprises a branch part, and the branch part penetrates through the inner pipe body and is used for being connected with the down-blowing pipeline.

The vacuum chamber or the inner tube comprises a switching space, the non-reactive gas delivery pipeline is connected with the downcast pipeline through the switching space, and the cross section area of the switching space is larger than that of the non-reactive gas delivery pipeline and the downcast pipeline.

The powder atomic layer deposition machine with the down-blowing pipeline is characterized in that the switching space is an annular body and surrounds the periphery of the inner pipe body.

The powder atomic layer deposition machine with the downward blowing pipeline comprises a first sealing ring positioned between an inner pipe body and a vacuum cavity.

The powder atomic layer deposition machine with the downcast pipeline comprises a second sealing ring positioned between the outer pipe body and the vacuum cavity, wherein the connecting position of the non-reaction gas conveying pipeline and the downcast pipeline is positioned between the first sealing ring and the second sealing ring.

The powder atomic layer deposition machine with the downward blowing pipeline comprises an extension pipe body connected with an air inlet pipeline, wherein the extension pipe body is positioned in a reaction space of the vacuum cavity.

The powder atomic layer deposition machine with the downward blowing pipeline comprises at least one fixing unit for fixing the vacuum cavity on the shaft seal device, and after the locking of the connecting unit is released, the vacuum cavity is detached from the shaft seal device.

The utility model has the advantages that: and arranging a downblow pipe on the vacuum chamber, wherein the downblow pipe faces the bottom of the reaction space and is used for blowing the powder deposited at the bottom of the reaction space so as to form a film with uniform thickness on the surface of the powder.

Drawings

Fig. 1 is a schematic three-dimensional view of an embodiment of a powder atomic layer deposition apparatus with a downblow line according to the present invention.

Fig. 2 is a schematic cross-sectional view of an embodiment of the atomic layer deposition apparatus with a downblow line according to the present invention.

Fig. 3 is a schematic cross-sectional view of an embodiment of a shaft seal device of a powder atomic layer deposition machine with a down-blowing pipeline according to the present invention.

FIG. 4 is a schematic cross-sectional view of another embodiment of a powder ALD apparatus having a downblow line according to the present invention.

FIG. 5 is a schematic cross-sectional view of another embodiment of a powder ALD apparatus having a downblow line according to the present invention.

FIG. 6 is a schematic cross-sectional view of another embodiment of a powder ALD apparatus having a downblow line according to the present invention.

FIG. 7 is a schematic cross-sectional view of another embodiment of a powder ALD apparatus having a downblow line according to the present invention.

Fig. 8 is an exploded cross-sectional view of another embodiment of the atomic layer deposition powder tool with a downblow line according to the present invention.

Description of the reference numerals: 10-a powder atomic layer deposition machine with a down-blowing pipeline; 11-vacuum chamber; 111-a cover plate; 1111-an inner surface; 112-a stationary unit; 113-a cavity; 114-a recess; 115-monitoring the wafer; 116-bottom; 117-downblow line; 12-a reaction space; 121-powder; 13-a shaft seal device; 131-an outer body; 132-a containing space; 133-an inner tube; 134-a connection space; 139-a filtration unit; 14-a gear; 15-a drive unit; 161-a first sealing ring; 163-a second sealing ring; 171-a non-reactive gas delivery line; 1711-a branch part; 172-an extension tube body; 1721-air outlet; 173-an air intake line; 175-a heater; 177-a suction line; 179-temperature sensing unit; 18-switching space.

Detailed Description

Please refer to fig. 1, fig. 2 and fig. 3, which are a schematic perspective view, a schematic cross-sectional view and a schematic cross-sectional view of a shaft seal device of a powder atomic layer deposition machine with a down-blowing pipeline according to an embodiment of the present invention. As shown in the figure, the atomic layer deposition machine 10 with a down-blowing pipeline mainly includes a vacuum chamber 11, a shaft seal device 13 and a driving unit 15, wherein the driving unit 15 is connected to the vacuum chamber 11 through the shaft seal device 13 and drives the vacuum chamber to rotate.

The vacuum chamber 11 has a reaction space 12 for accommodating a plurality of powders 121, wherein the powders 121 are deposited on the bottom of the reaction space 12 by gravity when the vacuum chamber 11 is still. The powder 121 may be Quantum dots (Quantum dots) of II-VI semiconductor materials such as ZnS, CdS, CdSe, etc., and the thin film formed on the Quantum dots may be aluminum oxide (Al2O 3). The vacuum chamber 11 may include a cover 111 and a chamber 113, wherein an inner surface 1111 of the cover 111 covers the chamber 113 and forms a reaction space 12 therebetween.

In an embodiment of the present invention, a monitoring wafer 115 may be disposed on the inner surface 1111 of the cover plate 111, and when the cover plate 111 covers the chamber 113, the monitoring wafer 115 is located in the reaction space 12. When performing atomic layer deposition in the reaction space 12, a thin film is formed on the surface of the monitor wafer 115. In practical applications, the film thickness on the surface of the wafer 115 and the film thickness on the surface of the powder 121 may be further measured and monitored, and the relationship between the two may be calculated. The film thickness on the surface of the wafer 115 may then be monitored by metrology to convert to a film thickness on the surface of the powder 121.

The shaft sealing device 13 includes an outer tube 131 and an inner tube 133, wherein the outer tube 131 has a receiving space 132, and the inner tube 133 has a connecting space 134, for example, the outer tube 131 and the inner tube 133 can be hollow cylinders. The accommodating space 132 of the outer tube 131 is used for accommodating the inner tube 133, wherein the outer tube 131 and the inner tube 133 are coaxially disposed. The shaft seal device 13 can be a common shaft seal or a magnetic fluid shaft seal, and is mainly used to isolate the reaction space 12 of the vacuum chamber 11 from the external space to maintain the vacuum of the reaction space 12.

The driving unit 15 is connected to one end of the shaft sealing device 13 and drives the vacuum chamber 11 to rotate through the shaft sealing device 13, for example, the outer tube 131 is connected to the vacuum chamber 11 and drives the vacuum chamber 11 to rotate through the outer tube 131.

The driving unit 15 can be connected to and drive the outer tube 131 and the vacuum chamber 11 to rotate continuously in the same direction, for example, clockwise or counterclockwise. In an embodiment of the present invention, the driving unit 15 can be a motor, and is connected to the outer tube 131 through at least one gear 14, and drives the outer tube 131 and the vacuum chamber 11 to rotate relative to the inner tube 133 through the gear 14.

At least one non-reactive gas delivery line 171, at least one gas inlet line 173, a heater 175, a gas exhaust line 177 and/or a temperature sensing unit 179 may be disposed in the connection space 134 of the inner tube 133, as shown in fig. 2 and 3.

The gas pumping line 177 is fluidly connected to the reaction space 12 of the vacuum chamber 11 and is used for pumping out the gas in the reaction space 12, so that the reaction space 12 is in a vacuum state for performing the atomic layer deposition process. Specifically, the gas exhaust line 177 may be connected to a pump, and the gas in the reaction space 12 is exhausted by the pump.

The gas inlet line 173 is fluidly connected to the reaction space 12 of the vacuum chamber 11 and is configured to deliver a precursor gas or a non-reactive gas to the reaction space 12, wherein the non-reactive gas may be an inert gas such as nitrogen or argon. For example, the gas inlet line 173 may be connected to a precursor gas storage tank and a non-reactive gas storage tank through a valve set, and deliver the precursor gas into the reaction space 12 through the valve set, so that the precursor gas deposits on the surface of the powder 121. In practice, the gas inlet line 173 may deliver a carrier gas (carrier gas) and precursor gas into the reaction space 12. Non-reactive gases are then delivered into reaction space 12 through a set of valves and pumped out through pumping line 177 to remove the precursor gases from reaction space 12. In one embodiment of the present invention, the gas inlet 173 may be connected to a plurality of branch lines, and sequentially deliver different precursor gases into the reaction space 12 through each branch line.

The gas inlet line 173 may increase the flow rate of the non-reactive gas supplied to the reaction space 12 and blow the powder 121 in the reaction space 12 by the non-reactive gas, so that the powder 121 is diffused to various regions of the reaction space 12 by the non-reactive gas.

Vacuum chamber 11 include and blow pipeline 117 down, wherein blow pipeline 117 down and connect reaction space 12 to towards vacuum chamber 11 and reaction space 12's bottom or side, for example blow pipeline 117 down and can incline for vacuum chamber 11 and/or shaft seal device 13's axle center. In one embodiment of the present invention, the reaction space 12 may be similar to a cylinder or polygonal column, including two bottom surfaces and a side surface, wherein the two bottom surfaces face each other, and the side surface connects the two bottom surfaces.

The non-reactive gas delivery line 171 is connected to the downpipe 117 of the vacuum chamber 11, and delivers a non-reactive gas into the reaction space 12 through the downpipe 117 to stir the powder 121 in the reaction space 12. Specifically, the down-blowing line 117 may blow the powder 121 deposited on the bottom of the reaction space 12 by gravity by blowing the non-reactive gas toward the side and/or bottom of the reaction space 12.

In an embodiment of the present invention, the non-reactive gas transfer line 171 is disposed in a direction substantially parallel to the axial direction of the shaft sealing device 13 and has a branch portion 1711. A branch portion 1711 is connected to one end of the vacuum chamber 11 near the inner tube 133, wherein the branch portion 1711 penetrates the inner tube 133 and is used for connecting the blow-down line 117, for example, the branch portion 1711 is disposed along the radial direction of the shaft sealing device 13.

When the outer tube 131 of the shaft sealing device 13 rotates the vacuum chamber 11, the downblow line 117 of the vacuum chamber 11 rotates relative to the inner tube 133 of the shaft sealing device 13 and the non-reactive gas delivery line 171. In an embodiment of the present invention, when the blowdown line 117 rotates to a specific angle, the blowdown line 117 is connected to the non-reactive gas transfer line 171, so that the non-reactive gas can be transferred from the non-reactive gas transfer line 171 to the blowdown line 117.

In an embodiment of the present invention, the gas inlet 173 and the non-reactive gas delivery line 171 can be used to deliver the non-reactive gas to the reaction space 12, wherein the flow of the non-reactive gas delivered by the gas inlet 173 is smaller, and is mainly used to remove the precursor gas in the reaction space 12, and the flow of the non-reactive gas delivered by the non-reactive gas delivery line 171 is larger, and is mainly used to blow the powder 121 in the reaction space 12.

The utility model discloses a when drive unit 15 drove outer body 131 and vacuum cavity 11 and rotates, interior body 133 and inside non-reactive gas conveying line 171, exhaust line 177 and air inlet pipe 173 can not be along with rotating, be favorable to improving air inlet pipe 173 and/or non-reactive gas conveying line 171 and carry to the stability of the non-reactive gas of reaction space 12 and/or predecessor gas.

The heater 175 is used to heat the connection space 134 and the inner tube 133, and the suction line 177, the gas inlet line 173 and/or the non-reactive gas delivery line 171 in the inner tube 133 are heated by the heater 175. The temperature sensing unit 179 is used to measure the temperature of the heater 175 or the connection space 134 to know the operation status of the heater 175. Of course, another heating device is usually disposed inside, outside or around the vacuum chamber 11, wherein the heating device is adjacent to or in contact with the vacuum chamber 11 and is used to heat the vacuum chamber 11 and the reaction space 12.

In an embodiment of the present invention, as shown in fig. 4, at least one sealing ring, such as a first sealing ring 161 and/or a second sealing ring 163, may be disposed between the shaft sealing device 13 and/or the vacuum chamber 11, wherein the connecting position of the non-reactive gas transmission rotating line 171 and the downpipe line 117 is located between the two sealing rings.

In practical applications, the first sealing ring 161 is located between the inner tube 133 and the vacuum chamber 11, and the second sealing ring 163 is located between the outer tube 131 and the vacuum chamber 11, wherein the first sealing ring 161 is a dynamic sealing ring and the second sealing ring 163 is a static sealing ring. For example, the first sealing ring 161 may be a Teflon O-ring (Teflon) fitted on the inner tube 133, and the second sealing ring 163 is a rubber O-ring. The first and second sealing rings 161/163 between the shaft seal device 13 and the vacuum chamber 11 are only an embodiment of the present invention, and the first sealing ring 161 can be disposed between the shaft seal device 13 and the vacuum chamber 11 in different embodiments, so as to achieve the purpose of sealing the reaction space 12.

In an embodiment of the present invention, a filtering unit 139 may be disposed between the vacuum chamber 11 or the shaft sealing device 13, wherein the gas pumping line 177, the gas inlet line 173 and/or the non-reactive gas conveying line 171 disposed in the inner tube 133 are fluidly connected to the reaction space 12 of the vacuum chamber 11 via the filtering unit 139.

In an embodiment of the present invention, as shown in fig. 5, the gas inlet line 173 may extend from the connecting space 134 of the inner pipe 133 to the reaction space 12 of the vacuum chamber 11, and form an extending pipe 172 in the reaction space 12 of the vacuum chamber 11. At least one gas outlet 1721 may be disposed on an end and/or a wall of the extension tube 172, and the extension tube 172 may deliver a precursor gas or an inert gas to the reaction space 12 through the gas outlet 1721.

In an embodiment of the present invention, as shown in fig. 6, an adapting space 18 may be disposed between the non-reactive gas delivery line 171 and the downcast line 117, wherein the adapting space 18 may be disposed on the inner body 133 of the shaft sealing device 13 and/or the vacuum chamber 11, and facilitates alignment of the non-reactive gas delivery line 171 and the downcast line 117. The cross-sectional area of the transition space 18 is larger than the non-reactive gas delivery line 171 and the downblow line 117, and the non-reactive gas delivery line 171 can be fluidly connected to the downblow line 117 via the transition space 18 when the vacuum chamber 11 is rotated relative to the inner tube 133 of the shaft sealing device 13.

The transfer space 18 may be a portion of the blowdown pipe line 117 such that the blowdown pipe line 117 has a large cross-sectional area at a position connected to the non-reactive gas transfer line 171, for example, the end of the blowdown pipe line 117 connected to the non-reactive gas transfer line 171 is flared. In another embodiment of the present invention, the adapting space 18 may be an annular body and surround the inner tube 133, so that the non-reactive gas delivery line 171 disposed on the inner tube 133 can be continuously connected to the downpipe line 117 via the annular adapting space 18 and continuously deliver the non-reactive gas to the reaction space 12 via the downpipe line 117, for example, the output non-reactive gas can rotate along with the downpipe line 117 and blow to different angles of the reaction space 12.

In an embodiment of the present invention, as shown in fig. 7 and 8, the vacuum chamber 11 and the shaft sealing device 13 can be designed as two separate components. In the ald process, as shown in fig. 7, the vacuum chamber 11 is connected to the shaft sealing device 13, and the fixing unit 112 fixes the vacuum chamber 11 and the shaft sealing device 13, for example, the fixing unit 112 is a screw, so that the driving unit 15 can drive the vacuum chamber 11 to rotate through the shaft sealing device 13. After the atomic layer deposition is completed, the locking unit 112 is unlocked, and the vacuum chamber 11 is removed from the shaft seal device 13.

In an embodiment of the present invention, as shown in fig. 8, a concave portion 114 may be disposed at the bottom 116 of the vacuum chamber 11, and a first sealing ring 161 is disposed in the concave portion 114. The inner tube 133 of the shaft sealing device 13 partially protrudes out of the outer tube 131, and a second sealing ring 163 is disposed on one side of the outer tube 131 connected to the bottom 116 of the vacuum chamber 11.

When the protruded inner tube 133 is inserted into the recess 114 of the vacuum chamber 11, the protruded inner tube 133 presses the first sealing ring 161 in the recess 114, and the bottom 116 or the recess 114 of the vacuum chamber 11 presses the second sealing ring 163 disposed on the outer tube 131 of the shaft sealing device 13. The number and the arrangement positions of the first sealing ring 161, the second sealing ring 163 and/or the concave portion 114 are only an embodiment of the present invention, and are not intended to limit the scope of the present invention.

In an embodiment of the present invention, the concave portion 114 can extend from the bottom 116 of the vacuum chamber 11 to the reaction space 12, and the inner tube 133 of the shaft sealing device 13 extends from the accommodating space 132 of the outer tube 131 to the outside and protrudes out of the shaft sealing device 13 and the outer tube 131. When connecting the vacuum chamber 11 and the shaft sealing device 13, the inner tube 133 of the protruding shaft sealing device 13 can be inserted into the recess 114, wherein the inner tube 133 of the shaft sealing device 13 extends from the accommodating space 132 of the outer tube 131 to the recess 114 and/or the reaction space 12 of the vacuum chamber 11.

The utility model discloses the advantage:

and arranging a downblow pipe on the vacuum chamber, wherein the downblow pipe faces the bottom of the reaction space and is used for blowing the powder deposited at the bottom of the reaction space so as to form a film with uniform thickness on the surface of the powder.

The foregoing is merely a preferred embodiment of the invention, and is not intended to limit the scope of the invention, which is defined by the appended claims, in which all equivalent changes and modifications in the shapes, constructions, features, and spirit of the invention are intended to be included.

Claims

1. A powder atomic layer deposition machine with a down-blowing pipeline is characterized by comprising:

a driving unit;

a shaft seal device connected with the driving unit;

a vacuum chamber, connect this bearing seal device, this drive unit drives this vacuum chamber through this bearing seal device and rotates, and this vacuum chamber includes:

the device comprises a cover plate and a cavity, wherein an inner surface of the cover plate covers the cavity to form a reaction space between the cover plate and the cavity, and a monitoring wafer is arranged on the inner surface of the cover plate, wherein the reaction space is used for containing a plurality of powders, and the powders are deposited at the bottom of the reaction space under the action of gravity; and

a downblow line connected to the reaction space and facing the bottom of the reaction space;

at least one gas extraction line, located in the shaft seal device, fluidly connected to the reaction space of the vacuum chamber, and used for extracting a gas in the reaction space;

at least one gas inlet pipeline, which is positioned in the shaft seal device, is in fluid connection with the reaction space of the vacuum cavity and is used for conveying a precursor gas to the reaction space; and

at least one non-reactive gas delivery line located in the shaft sealing device and used for connecting the downblow line of the vacuum chamber, wherein the non-reactive gas delivery line is used for delivering a non-reactive gas to the reaction space through the downblow line so as to blow the non-reactive gas to the bottom of the reaction space.

2. The apparatus of claim 1, wherein the shaft seal device comprises an outer tube and an inner tube, the outer tube comprises a receiving space for receiving the inner tube, and the inner tube comprises at least one connecting space for receiving the pumping line, the pumping line and the non-reactive gas delivery line.

3. The apparatus of claim 2, wherein the non-reactive gas delivery line comprises a branch portion extending through the inner tube and configured to connect to the downblow line.

4. The apparatus of claim 2, wherein the vacuum chamber or the inner tube comprises an adapter space, the non-reactive gas pipe is connected to the downblow pipe through the adapter space, and a cross-sectional area of the adapter space is larger than a cross-sectional area of the non-reactive gas pipe and the downblow pipe.

5. The apparatus of claim 4, wherein the adapter space is a ring surrounding the inner tube.

6. The apparatus of claim 2, comprising a first seal ring disposed between the inner tube and the vacuum chamber.

7. The apparatus of claim 6, comprising a second sealing ring disposed between the outer tube and the vacuum chamber, wherein a connection position of the non-reactive gas delivery line and the downblow line is disposed between the first sealing ring and the second sealing ring.

8. The atomic layer deposition machine with downblow line of claim 1, comprising an extension tube connected to the gas inlet line, the extension tube being disposed in the reaction space of the vacuum chamber.