CN115238623A

CN115238623A - Affinity energy model correction method, affinity energy model correction device, TCAD simulation method, TCAD simulation system and TCAD simulation medium

Info

Publication number: CN115238623A
Application number: CN202210763458.7A
Authority: CN
Inventors: 李舒啸; 代方
Original assignee: Benyuan Scientific Instrument Chengdu Technology Co ltd
Current assignee: Benyuan Scientific Instrument Chengdu Technology Co ltd
Priority date: 2022-06-30
Filing date: 2022-06-30
Publication date: 2022-10-25

Abstract

The application provides an affinity energy model correction method, an affinity energy model correction device, a TCAD simulation method, a TCAD simulation system, a TCAD simulation medium and equipment, which can solve the problem that the result of device simulation performed by a traditional TCAD simulation system under an extremely low temperature condition in the related art is inconsistent with the actual situation, and can improve the simulation accuracy. The method comprises the following steps: acquiring an actually measured starting voltage of a starting curve of the device under the extremely low temperature actual measurement; modifying parameters representing the electron affinity energy at the temperature of 0K in an affinity energy model in a TCAD simulation system; obtaining electron affinity energy of a device in a TCAD simulation system at extremely low temperature; acquiring simulated starting voltage of a starting curve of a device in a TCAD simulation system at extremely low temperature; judging whether the simulated starting voltage is consistent with the actually measured starting voltage; if yes, acquiring a corrected affinity energy model based on the parameter corresponding to the simulated starting voltage; if not, returning to the step of modifying the parameters of the electron affinity energy representing the temperature of 0K in the affinity energy model in the TCAD simulation system.

Description

Affinity energy model correction method, affinity energy model correction device, TCAD simulation method, TCAD simulation system and TCAD simulation medium

Technical Field

The present application relates to the field of chip simulation technologies, and in particular, to a method and an apparatus for affinity energy model modification, a TCAD simulation method and system, and a medium and a device.

Background

The primary functions of TCAD (Computer Aided Design) software are that it contains numerous physical models of the semiconductor process, solving physical and partial differential equations, such as diffusion and transmission equations of discrete geometry, and by means of these models, simulating the semiconductor process, implementing the Computer Aided Design functions, thus assisting engineers in designing circuit elements.

The low-temperature device simulation of the traditional TCAD simulation system is generally only about 55K, and for novel devices such as quantum chips, the use environment is 4K or even 100 Mk. For example, in a practical environment at a temperature of 4K, the electron density of the device at temperature is around the negative 67 th power; in the conventional TCAD simulation system, when the simulation environment temperature reaches 4K, the band width model for calculating the electron density obtains an electron density result as low as about minus 678 power, which is close to 0, and is not in accordance with the actual situation.

The inventor of the application solves the problem of abnormal electron density in the extremely low temperature simulation environment in the traditional TCAD simulation system by modifying the energy band width model table. However, the inventor of the present application finds that after the band width model is modified, when a voltage is applied to the source and drain ends in a simulation, the electrostatic potential at the source and drain ends of the device is almost flat and has no potential difference.

Therefore, the results of device simulation performed under very low temperature conditions in the conventional TCAD simulation system may not meet the actual conditions.

Disclosure of Invention

The application aims to provide an affinity energy model correction method, an affinity energy model correction device, a TCAD simulation method, a TCAD simulation system, a TCAD simulation medium and equipment, so as to solve the problem that the device simulation result of the traditional TCAD simulation system in the prior art is inconsistent with the actual situation.

In order to solve the above technical problem, in a first aspect, the present application provides an affinity model modification method, including:

acquiring an actually measured starting voltage of a starting curve of the device under extremely low temperature actual measurement;

modifying parameters representing the electron affinity energy at the temperature of 0K in an affinity energy model in a TCAD simulation system;

acquiring the electron affinity of the device in the TCAD simulation system at the extremely low temperature based on the modified parameters and the affinity model;

acquiring simulated starting voltage of a starting curve of the device in the TCAD simulation system at the extremely low temperature according to the electron affinity;

judging whether the simulated starting voltage is consistent with the actually measured starting voltage or not;

if yes, acquiring the modified affinity energy model based on the parameter corresponding to the simulated starting voltage; if not, returning to the step of modifying the parameters representing the electron affinity energy at the temperature of 0K in the affinity energy model in the TCAD simulation system.

Optionally, the modifying parameters characterizing the electron affinity at 0K temperature in the affinity model in the TCAD simulation system includes:

acquiring original parameters representing electron affinity energy at 0K temperature in a TCAD simulation system;

the original parameters are reduced.

Optionally, the expression of the affinity model is:

wherein, chi (T) represents the electron affinity energy of TK temperature; alpha and beta are parameters determined by materials, chi (0) represents the original parameter of electron affinity energy at the temperature of 0K, and T represents the temperature;

the reducing the original parameter includes:

reducing the original parameter by the following equation:

χ(0)′＝χ(0)-nΔx

wherein χ (0)' represents the modified parameter representing electron affinity energy at 0K temperature, n represents the current cycle number, and Δ x is a unit threshold.

Optionally, the determining whether the simulated turn-on voltage is consistent with the actually measured turn-on voltage includes:

judging whether the difference value of the simulated starting voltage and the actually-measured starting voltage is smaller than a threshold value;

if yes, the simulation starting voltage is consistent with the actual measurement starting voltage; and if not, the simulation starting voltage is inconsistent with the actually measured starting voltage.

In a second aspect, a TCAD simulation method is provided, including:

receiving a simulation instruction; wherein the simulation instruction comprises a simulation temperature and a simulation request of electron affinity of the device at the simulation temperature;

judging whether the simulation temperature is within a preset ultralow temperature range;

if yes, calling the affinity model modification method according to any one of the first aspect to obtain the modified affinity model to simulate the electron affinity of the device.

In a third aspect, a TCAD simulation system is provided, which includes the affinity model obtained by the affinity model modification method according to any one of the above first aspect.

In a fourth aspect, an affinity correction device is provided. The device includes:

the first acquisition module is used for acquiring the actually measured starting voltage of the starting curve of the device under the extremely low temperature actually measurement;

the modification module is used for modifying parameters representing the electron affinity energy at the temperature of 0K in the affinity energy model in the TCAD simulation system;

a second obtaining module, configured to obtain, based on the modified parameter and the affinity energy model, an electron affinity energy of the device in the TCAD simulation system at the extremely low temperature;

a third obtaining module, configured to obtain, according to the electron affinity, a simulated turn-on voltage of a turn-on curve of the device in the TCAD simulation system at the extremely low temperature;

the judging module is used for judging whether the simulation starting voltage is consistent with the actual measurement starting voltage;

the processing module is used for acquiring the corrected affinity energy model based on the parameter corresponding to the simulated starting voltage if the simulation starting voltage is the same as the simulated starting voltage; if not, returning to the step of modifying the parameters of the electron affinity energy representing the temperature of 0K in the affinity energy model in the TCAD simulation system.

In a fifth aspect, an electronic device is provided, comprising a memory having a computer program stored therein and a processor configured to execute the computer program to perform the method of any of the first aspect.

A sixth aspect provides a storage medium having a computer program stored thereon, wherein the computer program is arranged to, when run, perform the method of any of the first aspect.

Based on the affinity energy model correction method, the simulation opening voltage of the opening curve of the device in the TCAD simulation system at the extremely low temperature is consistent with the opening voltage of the opening curve of the device under actual measurement by modifying the parameters representing the electron affinity energy at the temperature of 0K in the affinity energy model, so that the problem that the result of device simulation performed by the traditional TCAD simulation system under the extremely low temperature condition is inconsistent with the actual condition is solved, and the simulation accuracy is improved.

The affinity energy model correction device, the TCAD simulation method and system, the medium and the equipment provided by the application belong to the same invention concept as the incomplete ionization model correction method, so that the affinity energy model correction device, the TCAD simulation method and system have the same beneficial effects, and are not described again.

Drawings

FIG. 1 is a block diagram of a hardware structure of a computer terminal of an affinity model modification method according to an exemplary embodiment of the present application;

FIG. 2 is a schematic flow chart of a method for modifying an affinity model according to an exemplary embodiment of the present disclosure;

fig. 3 is a schematic flowchart of a TCAD simulation method according to an exemplary embodiment of the present application;

fig. 4 is a schematic block diagram of an affinity model modification apparatus according to an exemplary embodiment of the present application.

Detailed Description

The following describes in more detail embodiments of the present invention with reference to the schematic drawings. Advantages and features of the present invention will become apparent from the following description and claims. It is to be noted that the drawings are in a very simplified form and are not to precise scale, which is merely for the purpose of facilitating and distinctly claiming the embodiments of the present invention.

In the description of the present invention, it should be understood that the terms "center", "upper", "lower", "left", "right", and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, and are only for convenience of description and simplicity of description, but do not indicate or imply that the device or element referred to must have a particular orientation, be constructed in a particular orientation, and be operated, and thus, should not be construed as limiting the present invention.

Furthermore, the terms "first", "second" and "first" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or to implicitly indicate the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of the present invention, "a plurality" means at least two, e.g., two, three, etc., unless explicitly specified otherwise.

The embodiment of the application firstly provides an affinity model correction method, and the method can be applied to electronic equipment, such as a computer terminal, specifically a common computer, a quantum computer and the like.

The following description will be made in detail by taking the example of the operation on a computer terminal. Fig. 1 is a block diagram of a hardware structure of a computer terminal of an affinity model modification method according to an embodiment of the present disclosure. As shown in fig. 1, the computer terminal 10 may include one or more (only one shown in fig. 1) processors 102 (the processor 102 may include, but is not limited to, a processing device such as a microprocessor MCU or a programmable logic device FPGA) and a memory 104 for storing data, and optionally may also include a transmission device 106 for communication functions and an input-output device 108. It will be understood by those skilled in the art that the structure shown in fig. 1 is only an illustration and is not intended to limit the structure of the computer terminal. For example, the computer terminal 10 may also include more or fewer components than shown in FIG. 1, or have a different configuration than shown in FIG. 1.

The memory 104 may be used to store software programs and modules of application software, such as program instructions/modules corresponding to the affinity model modification method in the embodiment of the present application, and the processor 102 executes various functional applications and data processing by running the software programs and modules stored in the memory 104, so as to implement the above-mentioned method. The memory 104 may include high speed random access memory, and may also include non-volatile memory, such as one or more magnetic storage devices, flash memory, or other non-volatile solid-state memory. In some examples, the memory 104 may further include memory located remotely from the processor 102, which may be connected to the computer terminal 10 via a network. Examples of such networks include, but are not limited to, the internet, intranets, local area networks, mobile communication networks, and combinations thereof.

The transmission device 106 is used for receiving or transmitting data via a network. Specific examples of the network described above may include a wireless network provided by a communication provider of the computer terminal 10. In one example, the transmission device 106 includes a Network adapter (NIC) that can be connected to other Network devices through a base station so as to communicate with the internet. In one example, the transmission device 106 can be a Radio Frequency (RF) module, which is used to communicate with the internet in a wireless manner.

The following describes a method for modifying an affinity model according to an embodiment of the present invention.

Referring to fig. 2, fig. 2 is a schematic flow chart of an affinity model modification method provided in an exemplary embodiment of the present application, including steps S210 to S260, where:

s210, actual measurement starting voltage of a starting curve of the device under extremely low temperature actual measurement is obtained.

Wherein the device is a device in a chip, such as a single electron transistor. Temperatures in the cryogenic range may be suitable for the affinity model modification method of the present application. The measured turn-on voltage of the turn-on curve of the device at very low temperature measurements can be obtained by reviewing relevant literature and conducting experiments to pass experimental data.

After the measured turn-on voltage of the device at the very low temperature is obtained, step S220 is performed.

S220, modifying parameters representing the electron affinity energy at the temperature of 0K in the affinity energy model in a TCAD simulation system.

Wherein the expression of the affinity model is as follows:

wherein, chi (T) represents the electron affinity energy of TK temperature; both α and β are parameters determined by the material, χ (0) characterizing the original parameter of electron affinity at 0K temperature, and T characterizing the temperature.

The inventor of the application verifies through simulation experiments that the affinity energy is reduced at 4K so as to solve the problem of no potential difference. Therefore, the application modifies the affinity model by modifying the parameters characterizing the electron affinity at 0K temperature in the affinity model.

Specifically, step S220 may include the following steps:

s2201, obtaining original parameters representing electron affinity energy at 0K temperature in the TCAD simulation system.

S2202, reducing the original parameters.

In one embodiment, the original parameter may be reduced by the following equation:

χ(0)′＝χ(0)-nΔx

wherein χ (0)' represents the modified parameter indicative of electron affinity at 0K temperature, n represents the current cycle number, and Δ x is a unit threshold. The unit threshold is a value set empirically and is not particularly limited.

It should be noted that the parameters in the affinity model have original value ranges in the TCAD simulation system. For example, the electron affinity χ (0) characterizing the temperature of 0K is a physical constant, which has a standard range, i.e., a raw range, in the conventional knowledge. In the TCAD simulation system, an original parameter is taken as a default value in an original value range.

Although the traditional TCAD simulation system gives the numerical modification authority of the physical constant, because x (0) is not a fixed value, a reasonable standard value range is provided. However, χ (0) is taken as a value in a reasonable standard value range, and the starting voltage of the simulated starting curve of the TCAD simulation system at the extremely low temperature is not consistent with the actually measured starting voltage of the device at the extremely low temperature. Therefore, the inventor modifies χ (0) so that the modified parameter value is not in the original value range, i.e. the common knowledge is broken through, and the simulated opening voltage of the modified affinity energy model at the extremely low temperature is consistent with the actually measured opening voltage in engineering.

After each parameter modification, step S230 is executed.

And S230, acquiring the electron affinity of the device in the TCAD simulation system at the extremely low temperature based on the modified parameters and the affinity model.

And after the parameters are modified each time, the modified parameter values are brought into the formula of the affinity energy model, and the modified electron affinity energy is obtained. Next, step S240 is performed.

S240, acquiring simulated turn-on voltage of a turn-on curve of the device in the TCAD simulation system at the extremely low temperature according to the electron affinity.

And the TCAD simulation system simulates the starting curve of the device at the extremely low temperature according to the electron affinity energy modified each time to obtain simulated starting voltage. After the simulated turn-on voltage is obtained, step S250 is performed.

And S250, judging whether the simulation starting voltage is consistent with the actual measurement starting voltage.

Specifically, whether the simulated starting voltage is consistent with the actually measured starting voltage can be judged by the following steps: and judging whether the difference value of the simulated starting voltage and the actually-measured starting voltage is smaller than a threshold value.

If the difference between the simulated starting voltage and the actually measured starting voltage is smaller than the threshold, the simulated starting voltage is consistent with the actually measured starting voltage, and step S260 is executed. If the difference between the simulated starting voltage and the actually measured starting voltage is not smaller than the threshold, the simulated starting voltage is inconsistent with the actually measured starting voltage, and the step S220 is returned.

And S260, acquiring the modified affinity energy model based on the parameters corresponding to the simulated starting voltage.

And replacing the parameters representing the electron affinity at the temperature of 0K in the affinity energy model with the modified parameters to obtain the modified affinity energy model suitable for the extremely low temperature.

Compared with the prior art, the method for correcting the affinity energy model based on the graph shown in fig. 2 is characterized in that the simulation starting voltage of the starting curve of the device in the TCAD simulation system at the extremely low temperature is consistent with the starting voltage of the starting curve of the device under actual measurement by modifying the parameter representing the electron affinity energy at the 0K temperature in the affinity energy model, so that the problem that the result of device simulation performed by the traditional TCAD simulation system at the extremely low temperature is inconsistent with the actual situation is solved, and the simulation accuracy is improved.

Referring to fig. 3, fig. 3 is a schematic flow chart of a TCAD simulation method according to an exemplary embodiment of the present application. As shown in fig. 3, based on the above affinity model modification method, the present application further provides a TCAD simulation method including steps S310 to S330, where:

s310, receiving a simulation instruction.

Wherein the simulation instruction comprises a simulation request of simulation temperature and electron affinity of the device at the simulation temperature.

And S320, judging whether the simulation temperature is within a preset extremely low temperature range.

And S330, if so, calling the affinity energy model correction method to obtain the corrected affinity energy model to simulate the electron affinity of the device.

If the simulation temperature is not within the preset cryogenic temperature range, step S340 is executed: and calling the affinity energy model before correction to simulate the electron affinity energy of the device.

The embodiment of the application also provides a TCAD simulation system which comprises the affinity energy model obtained according to the affinity energy model correction method.

The TCAD simulation method and the TCAD simulation system provided by the application belong to the same inventive concept as the affinity energy model correction method, so that the same beneficial effects are achieved, and the detailed description is omitted.

The method for modifying the affinity model provided by the embodiment of the present application is described in detail above with reference to fig. 2. The following describes in detail an apparatus for performing the affinity model modification method provided by the embodiments of the present application with reference to fig. 4.

Exemplarily, referring to fig. 4, fig. 4 is a schematic block diagram of an affinity model modification apparatus according to an exemplary embodiment of the present application, and in correspondence with the flow shown in fig. 2, the affinity model modification apparatus 400 includes:

a first obtaining module 410, configured to obtain an actually measured start voltage of a start curve of a device under extremely low temperature actual measurement;

a modifying module 420, configured to modify parameters of electron affinity at a temperature of 0K in the affinity model in the TCAD simulation system;

a second obtaining module 430, configured to obtain, based on the modified parameter and the affinity energy model, an electron affinity energy of the device in the TCAD simulation system at the extremely low temperature;

a third obtaining module 440, configured to obtain, according to the electron affinity, a simulated turn-on voltage of a turn-on curve of the device in the TCAD simulation system at the extremely low temperature;

a judging module 450, configured to judge whether the simulated turn-on voltage is consistent with the actually measured turn-on voltage;

a processing module 460, configured to obtain the modified affinity model based on the parameter corresponding to the simulated turn-on voltage if yes; if not, returning to the step of modifying the parameters of the electron affinity energy representing the temperature of 0K in the affinity energy model in the TCAD simulation system.

An embodiment of the present application further provides a storage medium, in which a computer program is stored, where the computer program is configured to execute the steps in any of the above method embodiments when running.

Specifically, in the present embodiment, the storage medium may be configured to store a computer program for executing the steps of:

s210, acquiring actually measured starting voltage of a starting curve of the device under extremely low temperature actual measurement;

s220, modifying parameters representing the electron affinity energy at the temperature of 0K in an affinity energy model in a TCAD simulation system;

s230, acquiring the electron affinity of the device in the TCAD simulation system at the extremely low temperature based on the modified parameters and the affinity model;

s240, acquiring simulated starting voltage of a starting curve of the device in the TCAD simulation system at the extremely low temperature according to the electron affinity;

s250, judging whether the simulation starting voltage is consistent with the actual measurement starting voltage;

s260, if yes, acquiring the corrected affinity energy model based on the parameter corresponding to the simulated starting voltage; if not, returning to the step of modifying the parameters of the electron affinity energy representing the temperature of 0K in the affinity energy model in the TCAD simulation system.

Specifically, in this embodiment, the storage medium may include, but is not limited to: various media capable of storing computer programs, such as a usb disk, a Read-Only Memory (ROM), a Random Access Memory (RAM), a removable hard disk, a magnetic disk, or an optical disk.

An embodiment of the present application further provides an electronic device, which includes a memory and a processor, where the memory stores a computer program, and the processor is configured to execute the computer program to perform the steps in any of the above method embodiments.

Specifically, the electronic apparatus may further include a transmission device and an input/output device, wherein the transmission device is connected to the processor, and the input/output device is connected to the processor.

Specifically, in this embodiment, the processor may be configured to execute the following steps by a computer program:

s210, acquiring an actually measured starting voltage of a starting curve of the device under extremely low temperature actual measurement;

Alternatively, the processor in the electronic device may be one or more. The processor may be implemented by hardware or by software. When implemented in hardware, the processor may be a logic circuit, an integrated circuit, or the like. When implemented in software, the processor may be a general-purpose processor implemented by reading software code stored in a memory.

Optionally, the memory in the electronic device may also be one or more. The memory may be integrated with the processor or may be separate from the processor, which is not limited in this application. For example, the memory may be a non-transitory processor, such as a read only memory ROM, which may be integrated on the same chip as the processor, or may be separately disposed on different chips, and the type of the memory and the arrangement of the memory and the processor are not particularly limited in this application.

The electronic device may be a Field Programmable Gate Array (FPGA), an Application Specific Integrated Circuit (ASIC), a system on chip (SoC), a Central Processing Unit (CPU), a Network Processor (NP), a digital signal processing circuit (DSP), a Microcontroller (MCU), a Programmable Logic Device (PLD), or other integrated chips.

It should be understood that the processor in the embodiments of the present application may be a Central Processing Unit (CPU), and the processor may also be other general purpose processors, digital Signal Processors (DSPs), application Specific Integrated Circuits (ASICs), field Programmable Gate Arrays (FPGAs) or other programmable logic devices, discrete gate or transistor logic devices, discrete hardware components, and the like. A general purpose processor may be a microprocessor or the processor may be any conventional processor or the like.

It will also be appreciated that the memory in the embodiments of the subject application may be either volatile memory or nonvolatile memory, or may include both volatile and nonvolatile memory. The non-volatile memory may be a read-only memory (ROM), a Programmable ROM (PROM), an Erasable PROM (EPROM), an electrically Erasable EPROM (EEPROM), or a flash memory. Volatile memory can be Random Access Memory (RAM), which acts as external cache memory. By way of example, but not limitation, many forms of Random Access Memory (RAM) are available, such as Static RAM (SRAM), dynamic RAM (DRAM), synchronous DRAM (SDRAM), double data rate SDRAM (DDR SDRAM), enhanced SDRAM (ESDRAM), synchlink DRAM (SLDRAM), and direct bus RAM (DR RAM).

The affinity energy model correction device, the storage medium and the electronic device provided by the application belong to the same inventive concept as the affinity energy model correction method, so that the affinity energy model correction device, the storage medium and the electronic device have the same beneficial effects, and are not described again.

The above embodiments may be implemented in whole or in part by software, hardware (e.g., circuitry), firmware, or any combination thereof. When implemented in software, the above-described embodiments may be implemented in whole or in part in the form of a computer program product. The computer program product comprises one or more computer instructions or computer programs. The procedures or functions according to the embodiments of the present application are wholly or partially generated when the computer instructions or the computer program are loaded or executed on a computer. The computer may be a general purpose computer, a special purpose computer, a network of computers, or other programmable device. The computer instructions may be stored on a computer readable storage medium or transmitted from one computer readable storage medium to another computer readable storage medium, for example, the computer instructions may be transmitted from one website, computer, server, or data center to another website, computer, server, or data center by wire (e.g., infrared, wireless, microwave, etc.). The computer-readable storage medium can be any available medium that can be accessed by a computer or a data storage device such as a server, data center, etc. that contains one or more collections of available media. The usable medium may be a magnetic medium (e.g., floppy disk, hard disk, magnetic tape), an optical medium (e.g., DVD), or a semiconductor medium. The semiconductor medium may be a solid state disk.

It should be understood that the term "and/or" herein is merely one type of association relationship that describes an associated object, meaning that three relationships may exist, e.g., a and/or B may mean: a exists singly, A and B exist simultaneously, and B exists singly, wherein A and B can be singular or plural. In addition, the "/" in this document generally indicates that the former and latter associated objects are in an "or" relationship, but may also indicate an "and/or" relationship, and may be understood with particular reference to the former and latter contexts.

In the present application, "at least one" means one or more, "a plurality" means two or more. "at least one of the following" or similar expressions refer to any combination of these items, including any combination of the singular or plural items. For example, at least one (one) of a, b, or c, may represent: a, b, c, a-b, a-c, b-c, or a-b-c, wherein a, b, c may be single or multiple.

It should be understood that, in the various embodiments of the present application, the sequence numbers of the above-mentioned processes do not imply any order of execution, and the order of execution of the processes should be determined by their functions and inherent logic, and should not constitute any limitation to the implementation process of the embodiments of the present application.

Those of ordinary skill in the art will appreciate that the various illustrative elements and algorithm steps described in connection with the embodiments disclosed herein may be implemented as electronic hardware or combinations of computer software and electronic hardware. Whether such functionality is implemented as hardware or software depends upon the particular application and design constraints imposed on the technical solution. Skilled artisans may implement the described functionality in varying ways for each particular application, but such implementation decisions should not be interpreted as causing a departure from the scope of the present application.

It is clear to those skilled in the art that, for convenience and brevity of description, the specific working processes of the above-described systems, apparatuses and units may refer to the corresponding processes in the foregoing method embodiments, and are not described herein again.

In the several embodiments provided in the present application, it should be understood that the disclosed system, apparatus and method may be implemented in other ways. For example, the above-described apparatus embodiments are merely illustrative, and for example, the division of the units is only one logical division, and other divisions may be realized in practice, for example, a plurality of units or components may be combined or integrated into another system, or some features may be omitted, or not executed. In addition, the shown or discussed mutual coupling or direct coupling or communication connection may be an indirect coupling or communication connection through some interfaces, devices or units, and may be in an electrical, mechanical or other form.

The units described as separate parts may or may not be physically separate, and parts displayed as units may or may not be physical units, may be located in one place, or may be distributed on a plurality of network units. Some or all of the units can be selected according to actual needs to achieve the purpose of the solution of the embodiment.

In addition, functional units in the embodiments of the present application may be integrated into one processing unit, or each unit may exist alone physically, or two or more units are integrated into one unit.

The functions, if implemented in the form of software functional units and sold or used as a stand-alone product, may be stored in a computer readable storage medium. Based on such understanding, the technical solution of the present application or portions thereof that substantially contribute to the prior art may be embodied in the form of a software product stored in a storage medium and including instructions for causing a computer device (which may be a personal computer, a server, or a network device) to execute all or part of the steps of the method according to the embodiments of the present application. And the aforementioned storage medium includes: various media capable of storing program codes, such as a usb disk, a removable hard disk, a read-only memory (ROM), a Random Access Memory (RAM), a magnetic disk, or an optical disk.

The above description is only for the specific embodiments of the present application, but the scope of the present application is not limited thereto, and any person skilled in the art can easily think of the changes or substitutions within the technical scope of the present application, and shall be covered by the scope of the present application. Therefore, the protection scope of the present application shall be subject to the protection scope of the claims.

Claims

1. A method for modifying an affinity model, the method comprising:

acquiring an actually measured starting voltage of a starting curve of the device under the extremely low temperature actual measurement;

if yes, acquiring the modified affinity energy model based on the parameter corresponding to the simulated starting voltage; if not, returning to the step of modifying the parameters of the electron affinity energy representing the temperature of 0K in the affinity energy model in the TCAD simulation system.

2. The method of claim 1, wherein modifying the parameters characterizing the electron affinity at 0K temperature in the affinity model in the TCAD simulation system comprises:

the original parameters are reduced.

3. The method of claim 2, wherein the expression of the affinity model is:

the reducing the original parameter includes:

reducing the original parameter by the following equation:

χ(0)′＝χ(0)-nΔx

4. The method of claim 1, wherein said determining whether the simulated turn-on voltage and the measured turn-on voltage are consistent comprises:

if yes, the simulation starting voltage is consistent with the actual measurement starting voltage; if not, the simulation starting voltage is inconsistent with the actual measurement starting voltage.

5. A TCAD simulation method, comprising:

receiving a simulation instruction; the simulation instruction comprises a simulation temperature and a simulation request of the electron affinity of the device at the simulation temperature;

judging whether the simulation temperature is within a preset extremely low temperature range;

if yes, calling the affinity model modification method according to any one of claims 1 to 4 to obtain the modified affinity model to simulate the electron affinity of the device.

6. A TCAD simulation system comprising an affinity model obtained by the affinity model modification method according to any one of claims 1 to 4.

7. An affinity model modification apparatus, comprising:

the judging module is used for judging whether the simulation starting voltage is consistent with the actual measurement starting voltage or not;

the processing module is used for acquiring the corrected affinity energy model based on the parameter corresponding to the simulated starting voltage if the simulation starting voltage is positive; if not, returning to the step of modifying the parameters representing the electron affinity energy at the temperature of 0K in the affinity energy model in the TCAD simulation system.

8. The apparatus of claim 7, wherein the modification module is further configured to: acquiring original parameters representing electron affinity energy at 0K temperature in a TCAD simulation system; the original parameters are reduced.

9. A storage medium, in which a computer program is stored, which computer program is arranged to, when executed, perform the method of any one of claims 1 to 5.

10. An electronic device, comprising a memory having a computer program stored therein and a processor configured to execute the computer program to perform the method of any of claims 1 to 5.