CN115238629A - Energy band structure model correction method and device, TCAD simulation method and system, and medium - Google Patents
Energy band structure model correction method and device, TCAD simulation method and system, and medium Download PDFInfo
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Abstract
The application provides an energy band structure model correction method, an energy band structure model correction device, a TCAD simulation method, a TCAD simulation system, a TCAD simulation medium and equipment, which can solve the problem that the result of device simulation performed by a traditional TCAD simulation system under an extremely low temperature condition in the related art is inconsistent with the actual situation, and can improve the simulation accuracy. The method comprises the following steps: acquiring the actually measured electron density of the device at extremely low temperature; modifying the energy band width value under the extremely low temperature in an energy band structure model in a TCAD simulation system; acquiring the simulation electron density at the extremely low temperature in the TCAD simulation system; judging whether the simulated electron density is consistent with the actually measured electron density; if so, acquiring the corrected energy band structure model; if not, returning to the step of modifying the energy band width value under the extremely low temperature in the energy band structure model in the TCAD simulation system.
Description
Technical Field
The present application relates to the field of chip simulation technologies, and in particular, to a method and an apparatus for correcting an energy band structure model, a TCAD simulation method and system, and a medium and a device.
Background
The primary functions of TCAD (Computer Aided Design) software are that it contains numerous physical models of the semiconductor process, solving physical and partial differential equations, such as diffusion and transmission equations of discrete geometry, and by means of these models, simulating the semiconductor process, implementing the Computer Aided Design functions, thus assisting engineers in designing circuit elements.
The low-temperature device simulation of the traditional TCAD simulation system is generally only about 55K, and for novel devices such as quantum chips, the use environment is 4K or even 100 Mk. For example, in a practical environment at a temperature of 4K, the electron density of the device at temperature is around the minus 67 th power; in the conventional TCAD simulation system, when the simulation environment temperature reaches 4K, the electron density result obtained by calculating the energy band structure model of the electron density is as low as about minus 678 power, which is close to 0, and is not in accordance with the actual situation.
Therefore, the results of device simulation performed under very low temperature conditions in the conventional TCAD simulation system may not meet the actual conditions.
Disclosure of Invention
The application aims to provide a method and a device for correcting an energy band structure model, a TCAD simulation method and system, a medium and equipment, so as to solve the problem that the result of device simulation performed by a traditional TCAD simulation system under an extremely low temperature condition in the prior art is inconsistent with the actual situation.
In order to solve the above technical problem, in a first aspect, the present application provides a method for correcting an energy band structure model, including:
acquiring the actually measured electron density of the device at extremely low temperature;
modifying the energy band width value under the extremely low temperature in the energy band structure model in a TCAD simulation system;
acquiring the simulation electron density under the extremely low temperature in the TCAD simulation system based on the modified energy band width value and the modified energy band structure model;
judging whether the simulated electron density is consistent with the actually measured electron density;
if so, acquiring the corrected energy band structure model based on the energy band width value corresponding to the simulated electron density; if not, returning to the step of modifying the energy band width value under the extremely low temperature in the energy band structure model in the TCAD simulation system.
Optionally, the modifying, in the TCAD simulation system, the energy bandwidth value at the extremely low temperature in the energy band structure model includes:
modifying parameters in a relational formula when the temperature is the extremely low temperature based on the relational formula of the energy band width and the temperature;
and acquiring the modified energy bandwidth value according to the modified parameters and the relation formula.
Optionally, the relationship between the energy band width and the temperature is as follows:
said E g (0) Is the energy bandwidth value of 0K temperature, T is the temperature, and alpha and beta are the relevant parameters of the device material;
the modifying the parameters in the relational formula comprises:
modification E g (0) Some or all of α and β.
Optionally, the modification E g (0) Some of the parameters α and β include:
fixing E g (0) One parameter value of α and β, and the other two parameter values are modified.
Optionally, the determining whether the simulated electron density is consistent with the measured electron density includes:
judging whether the magnitude of the simulated electron density is the same as that of the measured electron density;
if the electron density is the same as the actually measured electron density, the simulated electron density is consistent with the actually measured electron density; if not, the simulated electron density is inconsistent with the measured electron density.
In a second aspect, a TCAD simulation method is provided, including:
receiving a simulation instruction; wherein the simulation instruction comprises a simulation temperature and a simulation request of electron density at the simulation temperature;
judging whether the simulation temperature is within a preset extremely low temperature range;
if so, calling the energy band structure model correction method according to any one of the first aspect to obtain a corrected energy band structure model to simulate the electron density.
In a third aspect, a TCAD simulation system is provided, which includes the energy band structure model obtained by the energy band structure model modification method according to any one of the above first aspects.
In a fourth aspect, an apparatus for correcting a band structure model is provided. The device includes:
the first acquisition module is used for acquiring the actually measured electron density of the device at extremely low temperature;
the modification module is used for modifying the energy bandwidth value at the extremely low temperature in the energy band structure model in the TCAD simulation system;
a second obtaining module, configured to obtain, based on the modified energy bandwidth value and the energy band structure model, a simulated electron density at the extremely low temperature in the TCAD simulation system;
the judging module is used for judging whether the simulated electron density is consistent with the actually measured electron density;
the processing module is used for acquiring the corrected energy band structure model based on the energy band width value corresponding to the simulated electron density if the energy band width value is positive; if not, returning to the step of modifying the energy band width value under the extremely low temperature in the energy band structure model in the TCAD simulation system.
In a fifth aspect, an electronic device is provided, comprising a memory having a computer program stored therein and a processor configured to execute the computer program to perform the method of any of the first aspect.
A sixth aspect provides a storage medium having a computer program stored thereon, wherein the computer program is arranged to, when run, perform the method of any of the first aspect.
Based on the energy band structure model correction method, the energy band width value of the energy band structure model at the extremely low temperature is modified, so that the simulated electron density at the extremely low temperature in the TCAD simulation system is consistent with the actually measured electron density of the device at the extremely low temperature, the problem that the result of device simulation performed by the traditional TCAD simulation system at the extremely low temperature is inconsistent with the actual condition is solved, and the simulation accuracy is improved.
The energy band structure model correction device, the TCAD simulation method and system, the medium and the equipment provided by the application belong to the same invention concept as the energy band structure model correction method, so that the device has the same beneficial effects, and are not described again.
Drawings
Fig. 1 is a block diagram of a hardware structure of a computer terminal of a method for correcting an energy band structure model according to an exemplary embodiment of the present application;
fig. 2 is a schematic flowchart of a method for correcting an energy band structure model according to an exemplary embodiment of the present application;
fig. 3 is a schematic flowchart of a TCAD simulation method according to an exemplary embodiment of the present application;
fig. 4 is a schematic block diagram of an apparatus for modifying an energy band structure model according to an exemplary embodiment of the present application.
Detailed Description
The following describes in more detail embodiments of the present invention with reference to the schematic drawings. Advantages and features of the present invention will become apparent from the following description and claims. It is to be noted that the drawings are in a very simplified form and are not to precise scale, which is provided for the purpose of facilitating and clearly illustrating embodiments of the present invention.
In the description of the present invention, it is to be understood that the terms "center", "upper", "lower", "left", "right", and the like indicate orientations or positional relationships based on those shown in the drawings, and are only for convenience in describing the present invention and simplifying the description, but do not indicate or imply that the device or element referred to must have a specific orientation, be constructed in a specific orientation, and be operated, and thus, should not be construed as limiting the present invention.
Furthermore, the terms "first", "second" and "first" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of the present invention, "a plurality" means at least two, e.g., two, three, etc., unless specifically limited otherwise.
The embodiment of the application firstly provides a method for correcting an energy band structure model, and the method can be applied to electronic equipment, such as a computer terminal, specifically a common computer, a quantum computer and the like.
This will be described in detail below by way of example as it would run on a computer terminal. Fig. 1 is a hardware structure block diagram of a computer terminal of an energy band structure model correction method according to an embodiment of the present application. As shown in fig. 1, the computer terminal 10 may include one or more (only one shown in fig. 1) processors 102 (the processor 102 may include, but is not limited to, a processing device such as a microprocessor MCU or a programmable logic device FPGA) and a memory 104 for storing data, and optionally may also include a transmission device 106 for communication functions and an input-output device 108. It will be understood by those skilled in the art that the structure shown in fig. 1 is only an illustration and is not intended to limit the structure of the computer terminal. For example, the computer terminal 10 may also include more or fewer components than shown in FIG. 1, or have a different configuration than shown in FIG. 1.
The memory 104 may be used to store software programs and modules of application software, such as program instructions/modules corresponding to the energy band structure model modification method in the embodiment of the present application, and the processor 102 executes various functional applications and data processing by running the software programs and modules stored in the memory 104, so as to implement the above method. The memory 104 may include high speed random access memory, and may also include non-volatile memory, such as one or more magnetic storage devices, flash memory, or other non-volatile solid-state memory. In some examples, the memory 104 may further include memory located remotely from the processor 102, which may be connected to the computer terminal 10 via a network. Examples of such networks include, but are not limited to, the internet, intranets, local area networks, mobile communication networks, and combinations thereof.
The transmission device 106 is used for receiving or transmitting data via a network. Specific examples of the network described above may include a wireless network provided by a communication provider of the computer terminal 10. In one example, the transmission device 106 includes a Network adapter (NIC) that can be connected to other Network devices through a base station so as to communicate with the internet. In one example, the transmission device 106 can be a Radio Frequency (RF) module, which is used to communicate with the internet in a wireless manner.
The following further describes a method for modifying an energy band structure model according to an embodiment of the present invention.
Referring to fig. 2, fig. 2 is a schematic flow chart of a method for modifying an energy band structure model according to an exemplary embodiment of the present application, including steps S210 to S250, where:
and S210, acquiring the actually measured electron density of the device at the extremely low temperature.
Wherein the device is a device in a chip, such as a single electron transistor. Temperatures in the very low temperature range may be suitable for the band structure model correction method of the present application. The measured electron density of the device at extremely low temperatures can be obtained by referring to relevant literature and experimental data, for example, in an actual device, the measured electron density of a single-electron transistor at a temperature of 4K is about minus 67 th power.
After the measured electron density of the device at the very low temperature is obtained, step S220 is performed.
S220, modifying the energy bandwidth value at the extremely low temperature in the energy band structure model in the TCAD simulation system.
In a TCAD simulation system, the energy band structure model is electron density n i Description formula of relationship with temperature T:
wherein N is C Characterizing the effective density of states of the conduction band, N V Characterization of the effective density of states of the valence band, E g The band width is characterized and k represents the boltzmann constant.
The effective density of states of the conduction and valence bands in the above-described formula are respectively:
wherein m is n Represents the effective mass of electrons, m p Denotes the effective mass of the hole, m 0 Representing the free electron mass.
The relation formula of the energy band width and the temperature in the above description formula is as follows:
said E g (0) The energy bandwidth value is 0K temperature, T is temperature, and alpha and beta are relevant parameters of device materials.
With decreasing temperature T, E g (T)/2 kT increase rapidly, resulting in n in TCAD simulation system i (T) decreases rapidly, down to about the negative 678 power, not matching the measured electron density of the device at very low temperatures. Therefore, in order to reach the order of minus 67 th power, the energy band width E is corrected g The value of (T).
Wherein, the step S220 may include the following steps.
S2201, based on a relation formula of energy band width and temperature, when the temperature is the extremely low temperature, parameters in the relation formula are modified.
S2202, the modified energy bandwidth value is obtained according to the modified parameters and the relation formula.
The parameters in the relation formula of the energy band width and the temperature can be modified by modifying E g (0) In alpha and betaSome or all of the parameters of (a). For example, fix E g (0) One parameter value of α and β, and the other two parameter values are modified. E.g. fixing the value of the parameter for alpha, modifying the fixation E g (0) And the parameter value of beta. It is also possible to modify E directly g (0) The three parameter values α and β.
It should be noted that the parameters in the formula of the relationship between the energy band width and the temperature have the original value range in the TCAD simulation system. E.g. band width value E at 0K temperature g (0) And the relevant parameters alpha and beta of the device material are physical constants, and the values of the physical constants have standard ranges in the common knowledge, namely original value ranges.
Although the traditional TCAD simulation system gives the numerical modification authority of the physical constants, the reason is that E g (0) Alpha and beta are not fixed values, and a reasonable standard value range is provided. However, E g (0) Alpha and beta are valued in a reasonable standard value range, and n in a TCAD simulation system i (T) still shows extremely rapid decrease at low temperature, and is as low as minus 678 power, which is inconsistent with the measured electron density of the device at extremely low temperature. Therefore, the inventor modifies the parameters, so that the modified parameter value is not in the original value range, that is, the common knowledge is broken through, and the modified electronic density data of the energy band structure model simulation is consistent with the measured electronic density in engineering.
After the parameters are modified each time, the modified parameter values are brought into the relational formula, so as to obtain the modified energy bandwidth value, and then step S230 is executed.
And S230, acquiring the simulated electron density at the extremely low temperature in the TCAD simulation system based on the modified energy band width value and the modified energy band structure model.
Substituting the modified energy bandwidth value into the electron density n i And obtaining the modified simulated electron density by a description formula related to the temperature T, namely, bringing the description formula into a band structure model. Next, step S240 is performed.
S240, judging whether the simulated electron density is consistent with the actually measured electron density.
Wherein, whether the modified simulated electron density is consistent with the actual electron density can be judged by the following method: judging whether the magnitude of the simulated electron density is the same as that of the measured electron density; if the orders of magnitude are the same, the simulated electron density is consistent with the actually measured electron density; if the orders of magnitude are not the same, the simulated electron density is inconsistent with the measured electron density.
Of course, in other embodiments, it may also be determined whether the difference between the simulated electron density and the measured electron density is smaller than a threshold; if the difference value is smaller than the threshold value, the simulated electron density is consistent with the actually measured electron density; and if the difference is not less than the threshold value, the simulated electron density is inconsistent with the measured electron density.
If the simulated electron density is not consistent with the measured electron density, the process returns to step S220.
If the simulated electron density is consistent with the measured electron density, step S250 is executed.
And S250, acquiring the corrected energy band structure model based on the energy band width value corresponding to the simulated electron density.
And replacing the parameters of the relation formula of the energy band width and the temperature in the energy band structure model with the modified parameters to obtain the modified energy band structure model suitable for the extremely low temperature.
Compared with the prior art, the method for correcting the energy band structure model based on fig. 2 ensures that the simulated electron density under the extremely low temperature in the TCAD simulation system is consistent with the actually measured electron density of the device under the extremely low temperature by modifying the energy band width value of the energy band structure model under the extremely low temperature, solves the problem that the result of device simulation performed by the traditional TCAD simulation system under the extremely low temperature condition is inconsistent with the actual condition, and improves the simulation accuracy.
Referring to fig. 3, fig. 3 is a schematic flow chart of a TCAD simulation method according to an exemplary embodiment of the present application. As shown in fig. 3, based on the above energy band structure model correction method, the present application further provides a TCAD simulation method including steps S310 to S330, where:
s310, receiving a simulation instruction.
Wherein the simulation instruction comprises a simulation temperature and a simulation request of the electron density at the simulation temperature.
And S320, judging whether the simulation temperature is in a preset extremely low temperature range.
S330, if so, calling the energy band structure model correction method to obtain the corrected energy band structure model to simulate the electron density.
If the simulation temperature is not within the preset cryogenic temperature range, step S340 is executed: and calling the energy band structure model before correction to simulate the electron density.
The embodiment of the application also provides a TCAD simulation system which comprises the energy band structure model obtained according to the energy band structure model correction method.
The TCAD simulation method and the TCAD simulation system provided by the application belong to the same inventive concept as the correction method of the energy band structure model, so the TCAD simulation method and the TCAD simulation system have the same beneficial effects and are not repeated herein.
The energy band structure model modification method provided by the embodiment of the present application is described in detail above with reference to fig. 2. The following describes in detail an apparatus for performing the method for correcting the energy band structure model provided in the embodiments of the present application with reference to fig. 4.
Exemplarily, referring to fig. 4, fig. 4 is a schematic block diagram of an energy band structure model modification apparatus provided in an exemplary embodiment of the present application, and corresponding to the flow shown in fig. 2, the energy band structure model modification apparatus 400 includes:
a first obtaining module 410, configured to obtain an actually measured electron density of the device at a very low temperature;
a modifying module 420, configured to modify, in the TCAD simulation system, the energy bandwidth value at the extremely low temperature in the energy band structure model;
a second obtaining module 430, configured to obtain, based on the modified energy bandwidth value and the modified energy band structure model, a simulated electron density at the extremely low temperature in the TCAD simulation system;
a judging module 440, configured to judge whether the simulated electron density is consistent with the measured electron density;
a processing module 450, configured to obtain the modified energy band structure model based on the energy band width value corresponding to the simulated electron density if yes; if not, returning to the step of modifying the energy band width value under the extremely low temperature in the energy band structure model in the TCAD simulation system.
An embodiment of the present application further provides a storage medium, in which a computer program is stored, where the computer program is configured to execute the steps in any of the above method embodiments when running.
Specifically, in the present embodiment, the storage medium may be configured to store a computer program for executing the steps of:
s210, acquiring the actually measured electron density of the device at extremely low temperature;
s220, modifying the energy bandwidth value at the extremely low temperature in the energy band structure model in the TCAD simulation system;
s230, acquiring the simulated electron density at the extremely low temperature in the TCAD simulation system based on the modified energy band width value and the modified energy band structure model;
s240, judging whether the simulated electron density is consistent with the actually measured electron density;
s250, if yes, acquiring the corrected energy band structure model based on the energy band width value corresponding to the simulated electron density; if not, returning to the step of modifying the energy band width value under the extremely low temperature in the energy band structure model in the TCAD simulation system.
Specifically, in this embodiment, the storage medium may include, but is not limited to: various media capable of storing computer programs, such as a usb disk, a Read-Only Memory (ROM), a Random Access Memory (RAM), a removable hard disk, a magnetic disk, or an optical disk.
An embodiment of the present application further provides an electronic device, which includes a memory and a processor, where the memory stores a computer program, and the processor is configured to execute the computer program to perform the steps in any of the above method embodiments.
Specifically, the electronic apparatus may further include a transmission device and an input/output device, wherein the transmission device is connected to the processor, and the input/output device is connected to the processor.
Specifically, in this embodiment, the processor may be configured to execute the following steps by a computer program:
s210, acquiring the actually measured electron density of the device at extremely low temperature;
s220, modifying the energy bandwidth value at the extremely low temperature in the energy band structure model in the TCAD simulation system;
s230, acquiring the simulated electron density at the extremely low temperature in the TCAD simulation system based on the modified energy band width value and the modified energy band structure model;
s240, judging whether the simulated electron density is consistent with the actually measured electron density;
s250, if yes, acquiring the corrected energy band structure model based on the energy band width value corresponding to the simulated electron density; if not, returning to the step of modifying the energy band width value under the extremely low temperature in the energy band structure model in the TCAD simulation system.
Alternatively, the processor in the electronic device may be one or more. The processor may be implemented by hardware or by software. When implemented in hardware, the processor may be a logic circuit, an integrated circuit, or the like. When implemented in software, the processor may be a general-purpose processor implemented by reading software code stored in a memory.
Optionally, the electronic device may also have one or more memories. The memory may be integrated with the processor or may be separate from the processor, which is not limited in this application. For example, the memory may be a non-transitory processor, such as a read only memory ROM, which may be integrated with the processor on the same chip or separately disposed on different chips, and the type of the memory and the arrangement of the memory and the processor are not particularly limited in this application.
The electronic device may be, for example, a Field Programmable Gate Array (FPGA), an Application Specific Integrated Circuit (ASIC), a system on chip (SoC), a Central Processor Unit (CPU), a Network Processor (NP), a Digital Signal Processor (DSP), a Microcontroller (MCU), a Programmable Logic Device (PLD) or other integrated chips.
It should be understood that the processor in the embodiments of the present application may be a Central Processing Unit (CPU), and the processor may also be other general purpose processors, digital Signal Processors (DSPs), application Specific Integrated Circuits (ASICs), field Programmable Gate Arrays (FPGAs) or other programmable logic devices, discrete gate or transistor logic devices, discrete hardware components, and the like. A general purpose processor may be a microprocessor or the processor may be any conventional processor or the like.
It will also be appreciated that the memory in the embodiments of the subject application can be either volatile memory or nonvolatile memory, or can include both volatile and nonvolatile memory. The non-volatile memory may be a read-only memory (ROM), a Programmable ROM (PROM), an Erasable PROM (EPROM), an electrically Erasable EPROM (EEPROM), or a flash memory. Volatile memory can be Random Access Memory (RAM), which acts as external cache memory. By way of example, and not limitation, many forms of Random Access Memory (RAM) are available, such as Static RAM (SRAM), dynamic RAM (DRAM), synchronous DRAM (SDRAM), double data rate SDRAM (DDR SDRAM), enhanced SDRAM (ESDRAM), synchronous Link DRAM (SLDRAM), and direct bus RAM (DR RAM).
The energy band structure model correction device, the storage medium and the electronic device provided by the application belong to the same inventive concept as the energy band structure model correction method, so that the energy band structure model correction device, the storage medium and the electronic device have the same beneficial effects and are not repeated herein.
The above embodiments may be implemented in whole or in part by software, hardware (e.g., circuitry), firmware, or any combination thereof. When implemented in software, the above-described embodiments may be implemented in whole or in part in the form of a computer program product. The computer program product comprises one or more computer instructions or computer programs. The procedures or functions according to the embodiments of the present application are wholly or partially generated when the computer instructions or the computer program are loaded or executed on a computer. The computer may be a general purpose computer, a special purpose computer, a network of computers, or other programmable device. The computer instructions may be stored on a computer readable storage medium or transmitted from one computer readable storage medium to another computer readable storage medium, for example, the computer instructions may be transmitted from one website, computer, server, or data center to another website, computer, server, or data center by wire (e.g., infrared, wireless, microwave, etc.). The computer-readable storage medium can be any available medium that can be accessed by a computer or a data storage device, such as a server, data center, etc., that contains one or more collections of available media. The usable medium may be a magnetic medium (e.g., floppy disk, hard disk, magnetic tape), an optical medium (e.g., DVD), or a semiconductor medium. The semiconductor medium may be a solid state disk.
It should be understood that the term "and/or" herein is only one kind of association relationship describing the association object, and means that there may be three kinds of relationships, for example, a and/or B, and may mean: a exists singly, A and B exist simultaneously, and B exists singly, wherein A and B can be singular or plural. In addition, the "/" in this document generally indicates that the former and latter associated objects are in an "or" relationship, but may also indicate an "and/or" relationship, which may be understood with particular reference to the former and latter text.
In the present application, "at least one" means one or more, "a plurality" means two or more. "at least one of the following" or similar expressions refer to any combination of these items, including any combination of the singular or plural items. For example, at least one (one) of a, b, or c, may represent: a, b, c, a-b, a-c, b-c, or a-b-c, wherein a, b, c may be single or multiple.
It should be understood that, in the various embodiments of the present application, the sequence numbers of the above-mentioned processes do not mean the execution sequence, and the execution sequence of each process should be determined by its function and inherent logic, and should not constitute any limitation to the implementation process of the embodiments of the present application.
Those of ordinary skill in the art will appreciate that the various illustrative elements and algorithm steps described in connection with the embodiments disclosed herein may be implemented as electronic hardware or combinations of computer software and electronic hardware. Whether such functionality is implemented as hardware or software depends upon the particular application and design constraints imposed on the implementation. Skilled artisans may implement the described functionality in varying ways for each particular application, but such implementation decisions should not be interpreted as causing a departure from the scope of the present application.
It is clear to those skilled in the art that, for convenience and brevity of description, the specific working processes of the above-described systems, apparatuses and units may refer to the corresponding processes in the foregoing method embodiments, and are not described herein again.
In the several embodiments provided in the present application, it should be understood that the disclosed system, apparatus and method may be implemented in other ways. For example, the above-described apparatus embodiments are merely illustrative, and for example, the division of the units is only one logical division, and other divisions may be realized in practice, for example, a plurality of units or components may be combined or integrated into another system, or some features may be omitted, or not executed. In addition, the shown or discussed mutual coupling or direct coupling or communication connection may be an indirect coupling or communication connection through some interfaces, devices or units, and may be in an electrical, mechanical or other form.
The units described as separate parts may or may not be physically separate, and parts displayed as units may or may not be physical units, may be located in one place, or may be distributed on a plurality of network units. Some or all of the units can be selected according to actual needs to achieve the purpose of the solution of the embodiment.
In addition, functional units in the embodiments of the present application may be integrated into one processing unit, or each unit may exist alone physically, or two or more units are integrated into one unit.
The functions, if implemented in the form of software functional units and sold or used as a stand-alone product, may be stored in a computer readable storage medium. Based on such understanding, the technical solution of the present application or portions thereof that substantially contribute to the prior art may be embodied in the form of a software product stored in a storage medium and including instructions for causing a computer device (which may be a personal computer, a server, or a network device) to execute all or part of the steps of the method according to the embodiments of the present application. And the aforementioned storage medium includes: various media capable of storing program codes, such as a usb disk, a removable hard disk, a read-only memory (ROM), a Random Access Memory (RAM), a magnetic disk, or an optical disk.
The above description is only for the specific embodiments of the present application, but the scope of the present application is not limited thereto, and any person skilled in the art can easily conceive of the changes or substitutions within the technical scope of the present application, and shall be covered by the scope of the present application. Therefore, the protection scope of the present application shall be subject to the protection scope of the claims.
Claims (10)
1. A method for modifying an energy band structure model, the method comprising:
acquiring the actually measured electron density of the device at extremely low temperature;
modifying the energy band width value under the extremely low temperature in an energy band structure model in a TCAD simulation system;
acquiring the simulation electron density under the extremely low temperature in the TCAD simulation system based on the modified energy band width value and the modified energy band structure model;
judging whether the simulated electron density is consistent with the actually measured electron density;
if so, acquiring the corrected energy band structure model based on the energy band width value corresponding to the simulated electron density; if not, returning to the step of modifying the energy band width value under the extremely low temperature in the energy band structure model in the TCAD simulation system.
2. The method of claim 1, wherein modifying the energy bandwidth value at the cryogenic temperature in the energy band structure model in the TCAD simulation system comprises:
modifying parameters in a relational formula when the temperature is the extremely low temperature based on the relational formula of the energy band width and the temperature;
and acquiring the modified energy bandwidth value according to the modified parameters and the relation formula.
3. The method of claim 3, wherein the energy band width is related to the temperature by the equation:
said E g (0) Is the energy bandwidth value of 0K temperature, T is the temperature, and alpha and beta are the relevant parameters of the device material;
the modifying the parameters in the relational formula comprises:
modification E g (0) Some or all of α and β.
4. Method according to claim 3, characterized in that said modification E g (0) Some of the parameters α and β include:
fixing E g (0) One parameter value of α and β, and the other two parameter values are modified.
5. The method of claim 1, wherein said determining whether the simulated electron density and the measured electron density are consistent comprises:
judging whether the magnitude of the simulated electron density is the same as that of the measured electron density;
if the electron density is the same as the actually measured electron density, the simulated electron density is consistent with the actually measured electron density; and if not, the simulated electron density is inconsistent with the measured electron density.
6. A TCAD simulation method, comprising:
receiving a simulation instruction; wherein the simulation instruction comprises a simulation temperature and a simulation request of electron density at the simulation temperature;
judging whether the simulation temperature is within a preset ultralow temperature range;
if so, invoking the energy band structure model modification method according to any one of claims 1 to 5 to obtain a modified energy band structure model to simulate the electron density.
7. A TCAD simulation system, characterized in that it comprises a band structure model obtained by the method of modifying a band structure model according to any of claims 1 to 5.
8. An apparatus for modifying a model of an energy band structure, the apparatus comprising:
the first acquisition module is used for acquiring the actually measured electron density of the device at extremely low temperature;
the modification module is used for modifying the energy band width value under the extremely low temperature in the energy band structure model in the TCAD simulation system;
a second obtaining module, configured to obtain, based on the modified energy bandwidth value and the energy band structure model, a simulated electron density at the extremely low temperature in the TCAD simulation system;
the judging module is used for judging whether the simulated electron density is consistent with the actually measured electron density;
the processing module is used for acquiring the corrected energy band structure model based on the energy band width value corresponding to the simulated electron density if the energy band width value is positive; if not, returning to the step of modifying the energy band width value under the extremely low temperature in the energy band structure model in the TCAD simulation system.
9. A storage medium, characterized in that a computer program is stored in the storage medium, which computer program is arranged to, when executed, perform the method of any one of claims 1 to 6.
10. An electronic device, comprising a memory having a computer program stored therein and a processor configured to execute the computer program to perform the method of any of claims 1 to 6.
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| CN202210764902.7A CN115238629A (en) | 2022-06-30 | 2022-06-30 | Energy band structure model correction method and device, TCAD simulation method and system, and medium |
| PCT/CN2023/102834 WO2024002085A1 (en) | 2022-06-30 | 2023-06-27 | Simulation method and system based on tcad simulation system, storage medium and electronic device |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| WO2024002085A1 (en) * | 2022-06-30 | 2024-01-04 | 本源科仪(成都)科技有限公司 | Simulation method and system based on tcad simulation system, storage medium and electronic device |
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| WO2024002085A1 (en) * | 2022-06-30 | 2024-01-04 | 本源科仪(成都)科技有限公司 | Simulation method and system based on tcad simulation system, storage medium and electronic device |
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