CN115238628A - PhuMob model correction method and device, TCAD simulation method and system, medium and equipment - Google Patents
PhuMob model correction method and device, TCAD simulation method and system, medium and equipment Download PDFInfo
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- G06F30/00—Computer-aided design [CAD]
- G06F30/30—Circuit design
- G06F30/36—Circuit design at the analogue level
- G06F30/367—Design verification, e.g. using simulation, simulation program with integrated circuit emphasis [SPICE], direct methods or relaxation methods
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- G—PHYSICS
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- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F30/00—Computer-aided design [CAD]
- G06F30/30—Circuit design
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Abstract
The application provides a PhuMob model correction method and device, a TCAD simulation method system, a medium and equipment, which can solve the problem that the component simulation result of the traditional TCAD software under the condition of extremely low temperature in the related technology can not accord with the actual situation, and can improve the simulation accuracy. The method comprises the following steps: obtaining the mobility of an in-vivo impurity scattering target of the device at extremely low temperature; modifying a first temperature power parameter in an in-vivo impurity scattering mobility calculation formula of a PhuMob model in TCAD software; acquiring actually measured current data of the device at extremely low temperature; modifying a second temperature power parameter in a lattice scattering mobility equation of the PhuMob model in TCAD software; and acquiring a modified PhuMob model according to the modified first temperature power parameter and the modified second temperature power parameter.
Description
Technical Field
The application relates to the technical field of chip simulation, in particular to a PhuMob model correction method and device, a TCAD simulation system, a medium and equipment.
Background
The primary functions of TCAD (Computer Aided Design) software are that it contains numerous physical models of the semiconductor process, solving physical and partial differential equations, such as diffusion and transmission equations of discrete geometry, and by means of these models, simulating the semiconductor process, implementing the Computer Aided Design functions, thus assisting engineers in designing circuit elements.
The low-temperature device simulation of the traditional TCAD software is generally only about 55K, and for novel devices such as quantum chips and the like, the use environment is under the temperature of 4K or even 100 Mk. For example, the mobility model exhibits anomalous, non-physical mobility values below 55K, which do not match well with experimental data values for mobility at low temperatures.
Therefore, the result of the conventional TCAD software performing component simulation under the condition of extremely low temperature will not meet the actual situation.
Disclosure of Invention
The application aims to provide a PhuMob model correction method, a PhuMob model correction device, a TCAD simulation method, a TCAD simulation system, a medium and equipment, so as to solve the problem that the component simulation result of the traditional TCAD software under the extremely low temperature condition is inconsistent with the actual condition in the prior art.
In order to solve the technical problems, in a first aspect, the application provides a method for correcting a PhuMob model, and the mobility of an in-vivo impurity scattering target of a device at a very low temperature is obtained;
modifying a first temperature power parameter in an in-vivo impurity scattering mobility equation of a PhuMob model in TCAD software, so that the in-vivo impurity scattering mobility is increased along with the reduction of temperature after the first temperature power parameter is modified and is consistent with the in-vivo impurity scattering target mobility;
acquiring actually measured current data of the device at extremely low temperature;
modifying a second temperature power parameter in a lattice scattering mobility equation of the PhuMob model in TCAD software to enable the lattice scattering mobility to be matched with the actually measured current data after the second temperature power parameter is modified;
and acquiring a modified PhuMob model according to the modified first temperature power parameter and the modified second temperature power parameter.
Optionally, the expression of the in vivo impurity scattering mobility is:
wherein, the parameters in the formula are as follows:
the expression of the lattice scattering mobility is:
wherein, mu i,max The mobility minimum, μ, characterizing the electrons min Characterizing the mobility of the holes, n the electron concentration, p the hole concentration, T the temperature, α i Characterizing a first temperature power parameter, θ i Characterizing a second temperature power parameter, N i,sc Characterization of impurity-carrier scattering concentration, N i,sc,eff Characterization of effective impurity-carrier scattering concentration, N i,ref Characterizing the concentration parameter; modified first temperature power parameter alpha i Less than 0.5.
Optionally, the modifying the first temperature power parameter in the in vivo impurity scattering mobility calculation formula of the PhuMob model in the TCAD software includes:
reducing the first temperature power parameter alpha on the basis of the default parameter value i ；
Based on the modified first temperature power parameter alpha i Acquiring the scattering mobility of the modified in-vivo impurities;
judging whether the difference value of the scattering mobility of the modified in-vivo impurities and the scattering target mobility of the in-vivo impurities is smaller than a first threshold value or not;
if so, the in-vivo impurity scattering mobility is consistent with the in-vivo impurity scattering target mobility after the first temperature power parameter is modified; if not, the first temperature power parameter alpha is modified i The step (2).
Optionally, the modifying the second temperature power parameter in the lattice scattering mobility equation of the PhuMob model in the TCAD software includes:
the in vivo impurity scattering mobility is modified by a first temperature power parameter alpha i Then, after the mobility of the in-vivo impurity scattering target is consistent with that of the in-vivo impurity scattering target, modifying a second temperature power parameter theta i ；
Based on the modified second temperature power parameter theta i Acquiring the modified lattice scattering mobility;
judging whether the modified lattice scattering mobility is matched with the actually measured current data;
if not, the second temperature power parameter theta is modified i Until the modified lattice scattering mobility matches the measured current data.
Optionally, the determining whether the modified lattice scattering mobility matches the measured current data includes:
according to a modified first temperature power parameter alpha i The second temperature power parameter theta is modified i Obtaining the bulk mobility of the device according to the later lattice scattering mobility;
judging whether the difference value of the simulation current data represented by the body mobility and the actually measured current data is smaller than a second threshold value or not;
if so, matching the modified lattice scattering mobility with the actually measured current data; if not, the modified lattice scattering mobility does not match the measured current data.
In a second aspect, a TCAD simulation method is provided, including:
receiving a simulation instruction; wherein the simulation instruction comprises a simulation temperature and a simulation request of the volume mobility under the simulation temperature;
judging whether the simulation temperature is within a preset ultralow temperature range;
if so, calling the PhuMob model correction method according to any one of the first aspect to obtain a corrected PhuMob model to simulate the bulk mobility.
In a third aspect, a TCAD simulation system is provided, which includes the PhuMob model obtained by the PhuMob model modification method according to any one of the first aspect.
In a fourth aspect, a PhuMob model correction apparatus is provided. The device includes:
the first acquisition module is used for acquiring the mobility of an in-vivo impurity scattering target of the device at extremely low temperature;
the system comprises a first modification module, a second modification module and a third modification module, wherein the first modification module is used for modifying a first temperature power parameter in an in-vivo impurity scattering mobility equation of a PhuMob model in TCAD software so that the in-vivo impurity scattering mobility is increased along with the reduction of temperature after the first temperature power parameter is modified and is consistent with the in-vivo impurity scattering target mobility;
the second acquisition module is used for acquiring the actually measured current data of the device at extremely low temperature;
the second modification module is used for modifying a second temperature power parameter in a lattice scattering mobility equation of the PhuMob model in TCAD software so as to enable the lattice scattering mobility to be matched with the actually measured current data after the second temperature power parameter is modified;
and the third acquisition module is used for acquiring the modified PhuMob model according to the modified first temperature power parameter and the modified second temperature power parameter.
In a fifth aspect, an electronic device is provided, comprising a memory having a computer program stored therein and a processor configured to execute the computer program to perform the method of any of the first aspect.
A sixth aspect provides a storage medium having a computer program stored thereon, wherein the computer program is arranged to, when run, perform the method of any of the first aspect.
Based on the PhuMob model correction method, the data of the PhuMob model in the TCAD software is matched with the experimental data value of the mobility at low temperature by modifying the first temperature power parameter of the scattering mobility of the impurities in the body and the second temperature power parameter of the scattering mobility of the crystal lattices, so that the problem that the result of the simulation of components by the traditional TCAD software at extremely low temperature is inconsistent with the actual condition is solved, and the simulation accuracy is improved.
The PhuMob model correction device, the TCAD simulation method and system, the storage medium and the electronic device provided by the application belong to the same inventive concept as the PhuMob model correction method, so that the PhuMob model correction device has the same beneficial effects and is not described herein again.
Drawings
FIG. 1 is a block diagram of a hardware structure of a computer terminal of a PhuMob model modification method according to an exemplary embodiment of the present application;
FIG. 2 is a schematic flow chart diagram of a PhuMob model modification method provided in an exemplary embodiment of the present application;
fig. 3 is a schematic flowchart of a TCAD simulation method according to an exemplary embodiment of the present application;
fig. 4 is a schematic block diagram of a PhuMob model modification apparatus according to an exemplary embodiment of the present application.
Detailed Description
The following describes in more detail embodiments of the present invention with reference to the schematic drawings. Advantages and features of the present invention will become apparent from the following description and claims. It is to be noted that the drawings are in a very simplified form and are not to precise scale, which is merely for the purpose of facilitating and distinctly claiming the embodiments of the present invention.
In the description of the present invention, it should be understood that the terms "center", "upper", "lower", "left", "right", and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, and are only for convenience of description and simplicity of description, but do not indicate or imply that the device or element referred to must have a particular orientation, be constructed in a particular orientation, and be operated, and thus, should not be construed as limiting the present invention.
Furthermore, the terms "first", "second" and "first" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of the present invention, "a plurality" means at least two, e.g., two, three, etc., unless explicitly specified otherwise.
The embodiment of the application firstly provides a PhuMob model correction method, and the method can be applied to electronic equipment, such as a computer terminal, specifically a common computer, a quantum computer and the like.
The following description will be made in detail by taking the example of the operation on a computer terminal. Fig. 1 is a block diagram of a hardware structure of a computer terminal of a PhuMob model correction method according to an embodiment of the present application. As shown in fig. 1, the computer terminal 10 may include one or more (only one shown in fig. 1) processors 102 (the processor 102 may include, but is not limited to, a processing device such as a microprocessor MCU or a programmable logic device FPGA) and a memory 104 for storing data, and optionally may also include a transmission device 106 for communication functions and an input-output device 108. It will be understood by those skilled in the art that the structure shown in fig. 1 is only an illustration and is not intended to limit the structure of the computer terminal. For example, the computer terminal 10 may also include more or fewer components than shown in FIG. 1, or have a different configuration than shown in FIG. 1.
The memory 104 may be configured to store software programs and modules of application software, such as program instructions/modules corresponding to the PhuMob model modification method in the embodiment of the present application, and the processor 102 executes various functional applications and data processing by running the software programs and modules stored in the memory 104, so as to implement the method described above. The memory 104 may include high speed random access memory, and may also include non-volatile memory, such as one or more magnetic storage devices, flash memory, or other non-volatile solid-state memory. In some examples, the memory 104 may further include memory located remotely from the processor 102, which may be connected to the computer terminal 10 via a network. Examples of such networks include, but are not limited to, the internet, intranets, local area networks, mobile communication networks, and combinations thereof.
The transmission device 106 is used to receive or transmit data via a network. Specific examples of the network described above may include a wireless network provided by a communication provider of the computer terminal 10. In one example, the transmission device 106 includes a Network adapter (NIC) that can be connected to other Network devices through a base station so as to communicate with the internet. In one example, the transmission device 106 may be a Radio Frequency (RF) module, which is used to communicate with the internet via wireless.
The PhuMob model modification method provided by the embodiment of the present invention is further described below.
Referring to fig. 3, fig. 3 is a schematic flow chart of a PhuMob model modification method provided in an exemplary embodiment of the present application, including steps S210 to S250, where:
s210, acquiring the mobility of the in-vivo impurity scattering target of the device at extremely low temperature.
Wherein the device is a device in a chip, such as a single electron transistor. Temperatures in the very low temperature range may be suitable for the PhuMob model correction method of the present application. The mobility of the in-vivo impurity scattering target of the device at the extremely low temperature can be obtained through actual measurement, and can also be obtained through consulting relevant documents and experimental data.
After the in-vivo impurity scattering target mobility of the device at the extremely low temperature is obtained, step S220 is performed.
S220, modifying the first temperature power parameter in the calculation formula of the in-vivo impurity scattering mobility of the PhuMob model in TCAD software, so that the in-vivo impurity scattering mobility is increased along with the reduction of the temperature after the first temperature power parameter is modified and is consistent with the in-vivo impurity scattering target mobility.
The mobility described by the PhuMob model consists of two components, respectively the lattice scattering mobility μ i,L One-half plus in-vivo impurity scattering mobility mu i,DAeh . Wherein the bulk mobility of the device is equal to the lattice scattering mobility μ i,L One-half plus in-vivo impurity scattering mobility mu i,DAeh In one, the bulk mobility can be characterized in terms of current.
For in vivoImpurity scattering mobility μ i,DAeh The expression is as follows:
wherein, the parameters in the formula are as follows:
mobility μ for lattice scattering i,L The expression is as follows:
wherein, mu i,max Minimum mobility, μ, characterizing the electrons min Characterizing the mobility of the holes, n the electron concentration, p the hole concentration, T the temperature, α i Characterizing a first temperature power parameter, θ i Characterizing a second temperature power parameter, N i,sc Characterization of impurity-carrier scattering concentration, N i,sc,eff Characterization of effective impurity-carrier scattering concentration, N i,ref And characterizing the concentration parameters.
As is known in the art, at very low temperatures, the mobility of bulk coulomb scattering becomes larger as the temperature T decreases. And the coulomb scattering part is divided into two-dimensional and three-dimensional coulomb scattering, wherein the three-dimensional coulomb scattering is the scattering part of the impurities in the body. In the traditional TCAD simulation system, the in-vivo impurity scattering mobility mu is at extremely low temperature i,DAeh Due to the first temperature power parameter alpha i The original value range of (2) is more than 0.5, so that the index of the relevant parameter in the expression of the scattering mobility of the impurities in the body is positive, namely the scattering mobility mu of the impurities in the body is caused i,DAeh Becomes smaller as the temperature T decreases.
Therefore, to obtain reasonable values of in vivo impurity scattering mobility, it is necessary to determine the in vivo impurity scattering mobility μ in the PhuMob model i,DAeh A first temperature power parameter α in i Making a modification, the modified first temperature power parameter α i Less than 0.5. This makes the index of the relevant parameter in the expression of the in-vivo impurity scattering mobility negative, i.e. it will result in the in-vivo impurity scattering mobility mu i,DAeh Becomes larger as the temperature T decreases.
Specifically, step S220 may include the following steps:
s2201, reducing the first temperature power parameter alpha on the basis of the default parameter value i 。
In vivo impurity scattering mobility mu in traditional TCAD simulation system, phuMob model i,DAeh A first temperature power parameter α in i Default parameters and original value ranges are set. In the general knowledge, the first temperature power parameter α i The value of the physical constant is a reasonable standard value range, namely an original value range.
Therefore, in the traditional TCAD simulation system, phuMob model, the in vivo impurity scattering mobility mu i,DAeh A first temperature power parameter α in i And setting default parameters which are in the original value range. However, the first temperature power parameter α i Taking values in the original value range, wherein the indexes of relevant parameters in the expression of the in-vivo impurity scattering mobility are positive numbers, and the values do not accord with the in-vivo impurity scattering mobility mu at extremely low temperature i,DAeh The common knowledge that increases with decreasing temperature T. That is, the principle of modification is: modified first temperature power parameter alpha i Less than 0.5.
Each time the first temperature power parameter alpha is modified i Thereafter, step S2202 is executed.
S2202, based on the modified first temperature power parameter alpha i And acquiring the modified in-vivo impurity scattering mobility.
The modified first temperature power parameter alpha i Scattering mobility mu of impurities brought into the body i,DAeh Obtaining modified expression ofThe in vivo impurity scatters the mobility, and then step S2203 is performed.
S2203, determining whether the difference between the modified in vivo impurity scattering mobility and the in vivo impurity scattering target mobility is less than a first threshold.
The first threshold is a value set empirically, and is not particularly limited herein. Performing difference operation on the modified in-vivo impurity scattering mobility and the in-vivo impurity scattering target mobility, and then judging whether the difference is smaller than a first threshold value: if so, the in-vivo impurity scattering mobility is consistent with the in-vivo impurity scattering target mobility after the first temperature power parameter is modified. If not, return to step S2201.
And S230, acquiring the actually measured current data of the device at the extremely low temperature.
The current data of the device at the extremely low temperature can be obtained through actual measurement, and can also be obtained through consulting relevant documents and experimental data. After the measured current data of the device at the very low temperature is obtained, step S240 is executed.
S240, modifying the second temperature power parameter in the lattice scattering mobility formula of the PhuMob model in TCAD software to enable the lattice scattering mobility to be matched with the actually measured current data after the second temperature power parameter is modified.
Specifically, step S240 may include the following steps:
s2401, the in vivo impurity scattering mobility is modified by a first temperature power parameter alpha i Then, after the mobility of the in-vivo impurity scattering target is consistent with that of the in-vivo impurity scattering target, modifying a second temperature power parameter alpha i 。
Mobility mu for lattice scattering i,L The expression is as follows:
wherein, mu i,max The mobility maximum, θ, characterizing the electrons i Characterizing a second temperature power parameter.
The in vivo impurity scattering mobility is modified by a first temperature power parameter alpha i Then, after the mobility of the in-vivo impurity scattering target is consistent with that of the in-vivo impurity scattering target, the modified first temperature power parameter alpha is obtained i As a first temperature power parameter in the PhuMob model, and then modifying a second temperature power parameter θ i 。
S2402, based on the modified second temperature power parameter alpha i And acquiring the modified lattice scattering mobility.
S2403, judging whether the modified lattice scattering mobility is matched with the actually measured current data.
Whether the modified lattice scattering mobility is matched with the actually measured current data is judged by the following steps:
s24031, according to the modified first temperature power parameter alpha i The scattering mobility of the impurities in the body and the second temperature power parameter theta are modified i And obtaining the bulk mobility of the device by the later lattice scattering mobility.
The bulk mobility of the device is equal to the lattice scattering mobility mu i,L One-half plus in-vivo impurity scattering mobility mu i,DAeh One-off, the modified bulk mobility may be acquired, and then step S24032 is performed.
S24032, determining whether a difference between the simulated current data represented by the bulk mobility and the measured current data is less than a second threshold.
The second threshold is a value set empirically, and is not particularly limited herein. If the difference between the simulated current data characterized by the bulk mobility and the measured current data is smaller than a second threshold, the modified lattice scattering mobility is matched with the measured current data, and step S250 is executed.
If the difference value between the simulation current data represented by the bulk mobility and the measured current data is not less than a second threshold value, the modified lattice scattering mobility is not matched with the measured current data, and a second temperature power parameter theta is modified i Step S2401 until the modified lattice scattering mobility matches the measured current data.
And S250, acquiring a modified PhuMob model according to the modified first temperature power parameter and the modified second temperature power parameter.
And replacing the first temperature power parameter and the second temperature power parameter in the PhuMob model with the modified first temperature power parameter and the modified second temperature power, so as to obtain the modified PhuMob model suitable for the extremely low temperature.
It should be noted that the first temperature power parameter and the second temperature power parameter in the PhuMob model are physical constants, and in the common knowledge, the values of the physical constants have a standard range, that is, an original value range is provided in the TCAD simulation system. Although the traditional TCAD simulation system gives the numerical modification authority of the physical constants, the parameters are not fixed values, and a reasonable standard value range is provided. However, after the parameters are valued in a reasonable standard value range, abnormal and non-physical mobility values of the TCAD simulation system can appear below 55K. Therefore, the inventor modifies the parameters, so that the modified parameter value is not in the original value range, that is, the common knowledge is broken through, and the mobility value of the modified PhuMob model simulation is matched with the actually measured current data in engineering.
Therefore, compared with the prior art, based on the PhuMob model correction method shown in fig. 2, the data of the PhuMob model in the TCAD software is matched with the experimental data value of the mobility at low temperature by modifying the first temperature power parameter of the in vivo impurity scattering mobility and the second temperature power parameter of the lattice scattering mobility, so that the problem that the result of component simulation performed by the traditional TCAD software under the extremely low temperature condition is inconsistent with the actual condition is solved, and the simulation accuracy is improved.
Referring to fig. 3, fig. 3 is a schematic flowchart of a TCAD simulation method according to an exemplary embodiment of the present application. As shown in fig. 3, based on the PhuMob model modification method, the present application further provides a TCAD simulation method including steps S310 to S330, where:
s310, receiving a simulation instruction.
Wherein the simulation instruction comprises a simulation temperature and a simulation request of the volume mobility at the simulation temperature.
And S320, judging whether the simulation temperature is within a preset extremely low temperature range.
And S330, if so, adjusting the PhuMob model correction method to obtain the corrected PhuMob model to simulate the bulk mobility.
If the simulation temperature is not within the preset cryogenic temperature range, step S340 is executed: and calling a PhuMob model before correction to simulate the bulk mobility.
The embodiment of the application also provides a TCAD simulation system which comprises the PhuMob model obtained according to the PhuMob model correction method.
The TCAD simulation method and the TCAD simulation system provided by the application belong to the same inventive concept as the PhuMob model correction method, so that the same beneficial effects are achieved, and the details are not repeated.
The PhuMob model modification method provided by the embodiment of the present application is described in detail above with reference to fig. 2. The following describes in detail a device for executing the PhuMob model modification method provided in the embodiments of the present application with reference to fig. 4.
Exemplarily, referring to fig. 4, fig. 4 is a schematic block diagram of a PhuMob model modification apparatus according to an exemplary embodiment of the present application, and corresponding to the flow shown in fig. 2, the PhuMob model modification apparatus 400 includes:
a first obtaining module 410, configured to obtain mobility of an in vivo impurity scattering target of a device at an extremely low temperature;
a first modification module 420, configured to modify a first temperature power parameter in an in-vivo impurity scattering mobility equation of the PhuMob model in TCAD software, so that the in-vivo impurity scattering mobility increases with decreasing temperature after the first temperature power parameter is modified and is consistent with the in-vivo impurity scattering target mobility;
the second obtaining module 430 is configured to obtain measured current data of the device at an extremely low temperature;
a second modification module 440, configured to modify a second temperature power parameter in a lattice scattering mobility equation of the PhuMob model in the TCAD software, so that the lattice scattering mobility matches the measured current data after the second temperature power parameter is modified;
and a third obtaining module 450, configured to obtain the modified PhuMob model according to the modified first temperature power parameter and the modified second temperature power parameter.
An embodiment of the present application further provides a storage medium, where a computer program is stored, where the computer program is configured to execute the steps in any one of the method embodiments when the computer program is executed.
Specifically, in the present embodiment, the storage medium may be configured to store a computer program for executing the steps of:
s210, acquiring the mobility of an in-vivo impurity scattering target of the device at extremely low temperature;
s220, modifying a first temperature power parameter in an in-vivo impurity scattering mobility equation of the PhuMob model in TCAD software to ensure that the in-vivo impurity scattering mobility is increased along with the reduction of temperature after the first temperature power parameter is modified and is consistent with the in-vivo impurity scattering target mobility;
s230, acquiring actually measured current data of the device at extremely low temperature;
s240, modifying a second temperature power parameter in a lattice scattering mobility equation of the PhuMob model in TCAD software to enable the lattice scattering mobility to be matched with the actually measured current data after the second temperature power parameter is modified;
and S250, acquiring a modified PhuMob model according to the modified first temperature power parameter and the modified second temperature power parameter.
Specifically, in this embodiment, the storage medium may include, but is not limited to: various media capable of storing computer programs, such as a usb disk, a Read-Only Memory (ROM), a Random Access Memory (RAM), a removable hard disk, a magnetic disk, or an optical disk.
An embodiment of the present application further provides an electronic device, which includes a memory and a processor, where the memory stores a computer program, and the processor is configured to execute the computer program to perform the steps in any one of the method embodiments.
Specifically, the electronic apparatus may further include a transmission device and an input/output device, wherein the transmission device is connected to the processor, and the input/output device is connected to the processor.
Specifically, in this embodiment, the processor may be configured to execute the following steps by a computer program:
s210, acquiring the mobility of an in-vivo impurity scattering target of the device at extremely low temperature;
s220, modifying a first temperature power parameter in an in-vivo impurity scattering mobility equation of the PhuMob model in TCAD software to ensure that the in-vivo impurity scattering mobility is increased along with the reduction of temperature after the first temperature power parameter is modified and is consistent with the in-vivo impurity scattering target mobility;
s230, acquiring actually measured current data of the device at extremely low temperature;
s240, modifying a second temperature power parameter in a lattice scattering mobility equation of the PhuMob model in TCAD software to enable the lattice scattering mobility to be matched with the actually measured current data after the second temperature power parameter is modified;
and S250, acquiring a modified PhuMob model according to the modified first temperature power parameter and the modified second temperature power parameter.
Optionally, the processor in the electronic device may be one or more. The processor may be implemented by hardware or by software. When implemented in hardware, the processor may be a logic circuit, an integrated circuit, or the like. When implemented in software, the processor may be a general-purpose processor implemented by reading software code stored in a memory.
Optionally, the electronic device may also have one or more memories. The memory may be integrated with the processor or may be separate from the processor, which is not limited in this application. For example, the memory may be a non-transitory processor, such as a read only memory ROM, which may be integrated with the processor on the same chip or separately disposed on different chips, and the type of the memory and the arrangement of the memory and the processor are not particularly limited in this application.
The electronic device may be, for example, a Field Programmable Gate Array (FPGA), an Application Specific Integrated Circuit (ASIC), a system on chip (SoC), a Central Processor Unit (CPU), a Network Processor (NP), a Digital Signal Processor (DSP), a Microcontroller (MCU), a Programmable Logic Device (PLD) or other integrated chips.
It should be understood that the processor in the embodiments of the present application may be a Central Processing Unit (CPU), and the processor may also be other general purpose processors, digital Signal Processors (DSPs), application Specific Integrated Circuits (ASICs), field Programmable Gate Arrays (FPGAs) or other programmable logic devices, discrete gate or transistor logic devices, discrete hardware components, etc. A general purpose processor may be a microprocessor or the processor may be any conventional processor or the like.
It will also be appreciated that the memory in the embodiments of the subject application can be either volatile memory or nonvolatile memory, or can include both volatile and nonvolatile memory. The non-volatile memory may be a read-only memory (ROM), a Programmable ROM (PROM), an Erasable PROM (EPROM), an electrically Erasable EPROM (EEPROM), or a flash memory. Volatile memory can be Random Access Memory (RAM), which acts as external cache memory. By way of example, but not limitation, many forms of Random Access Memory (RAM) are available, such as Static RAM (SRAM), dynamic RAM (DRAM), synchronous DRAM (SDRAM), double data rate SDRAM (DDR SDRAM), enhanced SDRAM (ESDRAM), synchlink DRAM (SLDRAM), and direct bus RAM (DR RAM).
The PhuMob model correction device, the storage medium and the electronic device provided by the application belong to the same inventive concept as the PhuMob model correction method, so that the PhuMob model correction device, the storage medium and the electronic device have the same beneficial effects and are not repeated herein.
The above embodiments may be implemented in whole or in part by software, hardware (e.g., circuitry), firmware, or any combination thereof. When implemented in software, the above-described embodiments may be implemented in whole or in part in the form of a computer program product. The computer program product comprises one or more computer instructions or computer programs. The procedures or functions according to the embodiments of the present application are wholly or partially generated when the computer instructions or the computer program are loaded or executed on a computer. The computer may be a general purpose computer, a special purpose computer, a network of computers, or other programmable device. The computer instructions may be stored on a computer readable storage medium or transmitted from one computer readable storage medium to another computer readable storage medium, for example, the computer instructions may be transmitted from one website, computer, server, or data center to another website, computer, server, or data center by wire (e.g., infrared, wireless, microwave, etc.). The computer-readable storage medium can be any available medium that can be accessed by a computer or a data storage device such as a server, data center, etc. that contains one or more collections of available media. The usable medium may be a magnetic medium (e.g., floppy disk, hard disk, magnetic tape), an optical medium (e.g., DVD), or a semiconductor medium. The semiconductor medium may be a solid state disk.
It should be understood that the term "and/or" herein is merely one type of association relationship that describes an associated object, meaning that three relationships may exist, e.g., a and/or B may mean: a exists alone, A and B exist simultaneously, and B exists alone, wherein A and B can be singular or plural. In addition, the "/" in this document generally indicates that the former and latter associated objects are in an "or" relationship, but may also indicate an "and/or" relationship, which may be understood with particular reference to the former and latter text.
In this application, "at least one" means one or more, "a plurality" means two or more. "at least one of the following" or similar expressions refer to any combination of these items, including any combination of the singular or plural items. For example, at least one (one) of a, b, or c, may represent: a, b, c, a-b, a-c, b-c, or a-b-c, wherein a, b, c may be single or multiple.
It should be understood that, in the various embodiments of the present application, the sequence numbers of the above-mentioned processes do not mean the execution sequence, and the execution sequence of each process should be determined by its function and inherent logic, and should not constitute any limitation to the implementation process of the embodiments of the present application.
Those of ordinary skill in the art will appreciate that the various illustrative elements and algorithm steps described in connection with the embodiments disclosed herein may be implemented as electronic hardware or combinations of computer software and electronic hardware. Whether such functionality is implemented as hardware or software depends upon the particular application and design constraints imposed on the implementation. Skilled artisans may implement the described functionality in varying ways for each particular application, but such implementation decisions should not be interpreted as causing a departure from the scope of the present application.
It is clear to those skilled in the art that, for convenience and brevity of description, the specific working processes of the above-described systems, apparatuses and units may refer to the corresponding processes in the foregoing method embodiments, and are not described herein again.
In the several embodiments provided in the present application, it should be understood that the disclosed system, apparatus and method may be implemented in other ways. For example, the above-described apparatus embodiments are merely illustrative, and for example, the division of the units is only one type of logical functional division, and other divisions may be realized in practice, for example, multiple units or components may be combined or integrated into another system, or some features may be omitted, or not executed. In addition, the shown or discussed mutual coupling or direct coupling or communication connection may be an indirect coupling or communication connection through some interfaces, devices or units, and may be in an electrical, mechanical or other form.
The units described as separate parts may or may not be physically separate, and parts displayed as units may or may not be physical units, may be located in one place, or may be distributed on a plurality of network units. Some or all of the units can be selected according to actual needs to achieve the purpose of the solution of the embodiment.
In addition, functional units in the embodiments of the present application may be integrated into one processing unit, or each unit may exist alone physically, or two or more units are integrated into one unit.
The functions, if implemented in the form of software functional units and sold or used as a stand-alone product, may be stored in a computer readable storage medium. Based on such understanding, the technical solutions of the present application or portions thereof that substantially contribute to the prior art may be embodied in the form of a software product, which is stored in a storage medium and includes several instructions for causing a computer device (which may be a personal computer, a server, or a network device) to execute all or part of the steps of the methods described in the embodiments of the present application. And the aforementioned storage medium includes: various media capable of storing program codes, such as a usb disk, a removable hard disk, a read-only memory (ROM), a Random Access Memory (RAM), a magnetic disk, or an optical disk.
The above description is only for the specific embodiments of the present application, but the scope of the present application is not limited thereto, and any person skilled in the art can easily think of the changes or substitutions within the technical scope of the present application, and shall be covered by the scope of the present application. Therefore, the protection scope of the present application shall be subject to the protection scope of the claims.
Claims (10)
1. A PhuMob model modification method is characterized by comprising the following steps:
obtaining the mobility of an in-vivo impurity scattering target of the device at extremely low temperature;
modifying a first temperature power parameter in an in-vivo impurity scattering mobility equation of a PhuMob model in TCAD software, so that the in-vivo impurity scattering mobility is increased along with the reduction of temperature after the first temperature power parameter is modified and is consistent with the in-vivo impurity scattering target mobility;
acquiring actually measured current data of the device at extremely low temperature;
modifying a second temperature power parameter in a lattice scattering mobility equation of the PhuMob model in TCAD software to enable the lattice scattering mobility to be matched with the actually measured current data after the second temperature power parameter is modified;
and acquiring a modified PhuMob model according to the modified first temperature power parameter and the modified second temperature power parameter.
2. The method of claim 1, wherein the in vivo impurity scattering mobility is expressed by:
wherein, the parameters in the formula are as follows:
the expression of the lattice scattering mobility is:
wherein, mu i,max The mobility minimum, μ, characterizing the electrons min Characterizing the mobility of the holes, n the electron concentration, p the hole concentration, T the temperature, α i Characterizing a first temperature power parameter, θ i Characterizing a second temperature power parameter, N i,sc Characterization of impurity-carrier scattering concentration, N i,sc,eff Characterization of effective impurity-carrier scattering concentration, N i,ref Characterizing the concentration parameter; modified first temperature power parameter alpha i Less than 0.5.
3. The method of claim 2, wherein modifying the first temperature power parameter in the PhuMob model's in vivo impurity scattering mobility equation in TCAD software comprises:
reducing the first temperature power parameter alpha on the basis of a default parameter value i ；
Based on the modified first temperature power parameter alpha i Acquiring the scattering mobility of the modified in-vivo impurities;
judging whether the difference value of the scattering mobility of the modified in-vivo impurities and the scattering target mobility of the in-vivo impurities is smaller than a first threshold value or not;
if so, the in-vivo impurity scattering mobility is consistent with the in-vivo impurity scattering target mobility after the first temperature power parameter is modified; if not, the first temperature power parameter alpha is modified i The step (2).
4. The method of claim 3, wherein modifying the second temperature power parameter in the lattice scattering mobility equation of the PhuMob model in the TCAD software comprises:
the in vivo impurity scattering mobility is modified by a first temperature power parameterα i Then, after the mobility of the in-vivo impurity scattering target is consistent with that of the in-vivo impurity scattering target, modifying a second temperature power parameter theta i ；
Based on the modified second temperature power parameter theta i Acquiring the modified lattice scattering mobility;
judging whether the modified lattice scattering mobility is matched with the actually measured current data;
if not, the second temperature power parameter theta is modified i Until the modified lattice scattering mobility matches the measured current data.
5. The method of claim 4, wherein determining whether the modified lattice scattering mobility matches the measured current data comprises:
according to a modified first temperature power parameter alpha i The scattering mobility of the impurities in the body and the second temperature power parameter theta are modified i Obtaining the bulk mobility of the device according to the later lattice scattering mobility;
judging whether the difference value of the simulation current data represented by the body mobility and the actually measured current data is smaller than a second threshold value;
if yes, the modified lattice scattering mobility is matched with the actually measured current data; if not, the modified lattice scattering mobility does not match the measured current data.
6. A TCAD simulation method, comprising:
receiving a simulation instruction; wherein the simulation instruction comprises a simulation temperature and a simulation request of the lower-body mobility at the simulation temperature;
judging whether the simulation temperature is within a preset ultralow temperature range;
if so, invoking the PhuMob model modification method according to any one of claims 1 to 5 to obtain a modified PhuMob model to simulate the bulk mobility.
7. A TCAD simulation system, comprising a PhuMob model obtained by the PhuMob model modification method of any of claims 1 to 5.
8. A PhuMob model modification apparatus, comprising:
the first acquisition module is used for acquiring the mobility of an in-vivo impurity scattering target of the device at extremely low temperature;
the system comprises a first modification module, a second modification module and a third modification module, wherein the first modification module is used for modifying a first temperature power parameter in an in-vivo impurity scattering mobility equation of a PhuMob model in TCAD software so that the in-vivo impurity scattering mobility is increased along with the reduction of temperature after the first temperature power parameter is modified and is consistent with the in-vivo impurity scattering target mobility;
the second acquisition module is used for acquiring the actually measured current data of the device at extremely low temperature;
the second modification module is used for modifying a second temperature power parameter in a lattice scattering mobility equation of the PhuMob model in TCAD software so as to enable the lattice scattering mobility to be matched with the actually measured current data after the second temperature power parameter is modified;
and the third acquisition module is used for acquiring the modified PhuMob model according to the modified first temperature power parameter and the modified second temperature power parameter.
9. A storage medium, characterized in that a computer program is stored in the storage medium, which computer program is arranged to, when executed, perform the method of any one of claims 1 to 6.
10. An electronic device, comprising a memory having a computer program stored therein and a processor configured to execute the computer program to perform the method of any of claims 1 to 6.
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| CN116341470A (en) * | 2023-03-29 | 2023-06-27 | 南京米乐为微电子科技有限公司 | Scattering parameter measurement method, design method and simulation method of connection structure |
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| CN116341470B (en) * | 2023-03-29 | 2023-11-03 | 南京米乐为微电子科技有限公司 | Scattering parameter measurement method, design method and simulation method of connection structure |
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