CN115238626A - Sub-threshold region slope simulation method, TCAD simulation system, storage medium and device - Google Patents

Sub-threshold region slope simulation method, TCAD simulation system, storage medium and device Download PDF

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CN115238626A
CN115238626A CN202210764884.2A CN202210764884A CN115238626A CN 115238626 A CN115238626 A CN 115238626A CN 202210764884 A CN202210764884 A CN 202210764884A CN 115238626 A CN115238626 A CN 115238626A
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threshold
thickness
concentration threshold
concentration
simulation system
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李舒啸
代方
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Benyuan Scientific Instrument Chengdu Technology Co ltd
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Benyuan Scientific Instrument Chengdu Technology Co ltd
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    • G06—COMPUTING; CALCULATING OR COUNTING
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    • G06F30/00—Computer-aided design [CAD]
    • G06F30/30—Circuit design
    • G06F30/36—Circuit design at the analogue level
    • G06F30/367—Design verification, e.g. using simulation, simulation program with integrated circuit emphasis [SPICE], direct methods or relaxation methods
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F30/00—Computer-aided design [CAD]
    • G06F30/30—Circuit design
    • G06F30/39—Circuit design at the physical level
    • G06F30/398—Design verification or optimisation, e.g. using design rule check [DRC], layout versus schematics [LVS] or finite element methods [FEM]

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Abstract

The application provides a sub-threshold region slope simulation method, a TCAD simulation system, a storage medium and equipment, which can solve the problem that the result of device simulation performed by a traditional TCAD simulation system under an extremely low temperature condition in the related art can not accord with the actual situation, and can improve the simulation accuracy. The method comprises the following steps: obtaining the thickness of an oxide layer of a device in a TCAD simulation system; judging whether the thickness of the oxide layer is larger than a thickness threshold value or not; if so, reducing the concentration threshold of acceptor charges; uniformly distributing the reduced acceptor charges with the concentration threshold within a preset range of the conduction band bottom of the device interface; and executing a simulation flow of the sub-threshold region slope at the extremely low temperature in a TCAD simulation system.

Description

Sub-threshold region slope simulation method, TCAD simulation system, storage medium and equipment
Technical Field
The present application relates to the field of chip simulation technologies, and in particular, to a sub-threshold region slope simulation method, a TCAD simulation system, a storage medium, and a device.
Background
The primary functions of TCAD (Computer Aided Design) software are that it contains numerous physical models of the semiconductor process, solving physical and partial differential equations, such as diffusion and transmission equations of discrete geometry, and by means of these models, simulating the semiconductor process, implementing the Computer Aided Design functions, thus assisting engineers in designing circuit elements.
The low-temperature device simulation of the traditional TCAD simulation system is generally only about 55K, and for novel devices such as quantum chips, the use environment is 4K or even 100 Mk. Among them, in the very low temperature MOS characteristic, the subthreshold region slope is a critical physical quantity. For example, in actual environmental detection, the sub-threshold region slope goes into a saturation trend after being lower than 50K; in the conventional TCAD simulation system, when the simulation environment temperature is in the extremely low temperature range, the slope of the sub-threshold region continuously decreases with the decrease of the temperature, and does not enter the saturation trend, which is not in accordance with the actual situation.
Therefore, the result of device simulation performed by the conventional TCAD simulation system under the very low temperature condition may not be in accordance with the actual situation.
Disclosure of Invention
The application aims to provide a sub-threshold region slope simulation method, a TCAD simulation system, a storage medium and equipment, so as to solve the problem that the result of device simulation performed by a traditional TCAD simulation system under an extremely low temperature condition in the prior art is inconsistent with the actual situation.
In order to solve the above technical problem, in a first aspect, the present application provides a sub-threshold region slope simulation method, including:
obtaining the thickness of an oxide layer of a device in a TCAD simulation system;
judging whether the thickness of the oxide layer is larger than a thickness threshold value or not;
if so, reducing the concentration threshold of acceptor charges;
uniformly distributing the reduced acceptor charges with the concentration threshold within a preset range of the conduction band bottom of the device interface;
and executing a simulation flow of the sub-threshold region slope at the extremely low temperature in the TCAD simulation system.
Optionally, the reducing the concentration threshold of acceptor charges comprises:
calculating the ratio of the difference between the thickness of the oxide layer and the thickness threshold value to the thickness threshold value;
and reducing the concentration threshold of the acceptor charges according to the ratio of the difference to the thickness threshold.
Optionally, reducing the concentration threshold of acceptor charges according to a ratio of the difference to the thickness threshold comprises:
calculating the product of the concentration threshold of acceptor charges and the ratio;
calculating a difference between the concentration threshold and the product to obtain the reduced concentration threshold.
Optionally, if the thickness of the oxide layer is smaller than the thickness threshold, the method further includes:
increasing a concentration threshold of acceptor charges;
uniformly distributing the increased acceptor charges with the concentration threshold within a preset range of the conduction band bottom of the device interface;
and executing a sub-threshold region slope simulation flow at the extremely low temperature in a TCAD simulation system.
Optionally, the increasing the concentration threshold of acceptor charges includes:
calculating the ratio of the difference between the thickness of the oxide layer and the thickness threshold value to the thickness threshold value;
and increasing the concentration threshold of the acceptor charges according to the ratio of the difference to the thickness threshold.
Optionally, increasing a concentration threshold of acceptor charges according to a ratio of the difference to the thickness threshold includes:
calculating the product of the concentration threshold of acceptor charges and the ratio;
calculating a difference between the concentration threshold and the product to obtain the increased concentration threshold.
In a second aspect, a TCAD simulation system is provided, including:
the acquisition module is used for acquiring the thickness of an oxide layer of a device in the TCAD simulation system;
the judging module is used for judging whether the thickness of the oxidation layer is larger than a thickness threshold value;
the processing module is used for reducing the concentration threshold of the acceptor charges if the acceptor charges are larger than the threshold; uniformly distributing the reduced acceptor charges with the concentration threshold in a preset range of the conduction band bottom of the device interface; and executing a sub-threshold region slope simulation process at extremely low temperature in a TCAD simulation system.
Optionally, the processing module includes:
the calculating unit is used for calculating the ratio of the difference value of the thickness of the oxidation layer and the thickness threshold value to the thickness threshold value;
and the reducing unit is used for reducing the concentration threshold of the acceptor charges according to the proportion of the difference value to the thickness threshold.
In a third aspect, an electronic device is provided, comprising a memory having a computer program stored therein and a processor configured to execute the computer program to perform the method of any of the first aspect.
In a fourth aspect, a storage medium is provided, in which a computer program is stored, wherein the computer program is arranged to perform the method of any of the above first aspects when executed.
Based on the above sub-threshold slope correction method, the inventors of the present application found that, in the TCAD simulation system, for a MOS device with an oxide layer thickness =7.6nm, under the condition of 5K simulation, a concentration of 6 × 10 is introduced at the device interface 13 cm 3 The acceptor charges are uniformly distributed at the conduction band, simulation is carried out at the moment, and the slope of the subthreshold region can enter a saturation trend within a very low temperature range; therefore, acceptor charges with certain concentration are uniformly distributed in the preset range of the conduction band bottom of the device interface, so that the slope simulation of the subthreshold region at the extremely low temperature in the TCAD simulation system is consistent with experimental data, the problem that the result of device simulation performed by the traditional TCAD simulation system at the extremely low temperature is inconsistent with the actual condition is solved, and the simulation accuracy is improved.
The TCAD simulation system, the storage medium and the electronic device provided by the application belong to the same inventive concept with the sub-threshold region slope simulation method, so that the TCAD simulation system, the storage medium and the electronic device have the same beneficial effects and are not repeated herein.
Drawings
FIG. 1 is a block diagram of a hardware structure of a computer terminal of a sub-threshold slope simulation method according to an exemplary embodiment of the present application;
FIG. 2 is a schematic flow chart diagram illustrating a sub-threshold region slope simulation method according to an exemplary embodiment of the present disclosure;
fig. 3 is a schematic block diagram of a TCAD simulation system according to an exemplary embodiment of the present application.
Detailed Description
The following describes in more detail embodiments of the present invention with reference to the schematic drawings. Advantages and features of the present invention will become apparent from the following description and claims. It is to be noted that the drawings are in a very simplified form and are not to precise scale, which is merely for the purpose of facilitating and distinctly claiming the embodiments of the present invention.
In the description of the present invention, it is to be understood that the terms "center", "upper", "lower", "left", "right", and the like indicate orientations or positional relationships based on those shown in the drawings, and are only for convenience in describing the present invention and simplifying the description, but do not indicate or imply that the device or element referred to must have a specific orientation, be constructed in a specific orientation, and be operated, and thus, should not be construed as limiting the present invention.
Furthermore, the terms "first", "second" and "first" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or to implicitly indicate the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of the present invention, "a plurality" means at least two, e.g., two, three, etc., unless specifically limited otherwise.
The embodiment of the application firstly provides a sub-threshold region slope simulation method, and the method can be applied to electronic equipment, such as a computer terminal, specifically a common computer, a quantum computer and the like.
This will be described in detail below by way of example as it would run on a computer terminal. Fig. 1 is a block diagram of a hardware structure of a computer terminal of a sub-threshold region slope simulation method according to an embodiment of the present disclosure. As shown in fig. 1, the computer terminal 10 may include one or more processors 102 (only one is shown in fig. 1) (the processor 102 may include, but is not limited to, a processing device such as a microprocessor MCU or a programmable logic device FPGA, etc.) and a memory 104 for storing data, and optionally may also include a transmission device 106 for communication functions and an input-output device 108. It will be understood by those skilled in the art that the structure shown in fig. 1 is only an illustration and is not intended to limit the structure of the computer terminal. For example, the computer terminal 10 may also include more or fewer components than shown in FIG. 1, or have a different configuration than shown in FIG. 1.
The memory 104 may be used to store software programs and modules of application software, such as program instructions/modules corresponding to the sub-threshold slope simulation method in the embodiment of the present application, and the processor 102 executes various functional applications and data processing by executing the software programs and modules stored in the memory 104, so as to implement the method described above. The memory 104 may include high speed random access memory, and may also include non-volatile memory, such as one or more magnetic storage devices, flash memory, or other non-volatile solid-state memory. In some examples, the memory 104 may further include memory located remotely from the processor 102, which may be connected to the computer terminal 10 over a network. Examples of such networks include, but are not limited to, the internet, intranets, local area networks, mobile communication networks, and combinations thereof.
The transmission device 106 is used for receiving or transmitting data via a network. Specific examples of the network described above may include a wireless network provided by a communication provider of the computer terminal 10. In one example, the transmission device 106 includes a Network adapter (NIC) that can be connected to other Network devices through a base station to communicate with the internet. In one example, the transmission device 106 can be a Radio Frequency (RF) module, which is used to communicate with the internet in a wireless manner.
The sub-threshold region slope simulation method provided by the embodiment of the invention is further described below.
Referring to fig. 2, fig. 2 is a schematic flowchart of a sub-threshold region slope simulation method provided in an exemplary embodiment of the present application, including steps S210 to S250, where:
s210, obtaining the thickness of an oxide layer of a device in the TCAD simulation system.
Wherein the device is a device in a chip, such as a single electron transistor. The thickness of the oxide layer of the device can be a parameter input by a user during simulation in the TCAD simulation system, and can also be a parameter generated by the TCAD simulation system. That is, the thickness of the oxide layer of the device can be obtained by querying in the TCAD simulation system.
After obtaining the thickness of the oxide layer of the device in the TCAD simulation system, step S220 is performed.
S220, judging whether the thickness of the oxide layer is larger than a thickness threshold value.
The thickness threshold is a value set empirically, and is not limited specifically herein.
Because the slope of the sub-threshold region in the actual environment enters a saturation trend after being lower than 50K, in the conventional TCAD simulation system, when the simulation environment temperature is in a very low temperature range, the slope of the sub-threshold region continuously decreases with the decrease of the temperature, which is not in accordance with the slope variation trend of the sub-threshold region in the actual environment. The abnormal subthreshold slope phenomenon is thought by some to be caused by the trapped charge (Traps) distribution at the material interface.
Based on the knowledge, the inventor finds that the problem that the change trend of the slope of the sub-threshold region along with the temperature in the TCAD simulation system is not consistent with the change trend of the slope of the sub-threshold region in the actual environment can be solved by introducing the trap charge distribution at the device interface.
For example, the inventors of the present application found that: for a MOS device with the width-length ratio =10um/10um and the Oxide layer thickness =7.6nm, under the condition of 5K simulation, the concentration of 6 multiplied by 10 is introduced at the Si/Oxide interface of the device 13 cm -3 The acceptor charges of (2) are uniformly distributed in the range of Ec-5meV to Ec +25meV, wherein Ec represents the energy at the bottom of a conduction band; at this time, during simulation of the TCAD simulation system, the variation trend of the simulated sub-threshold region slope along with the temperature is consistent with the variation trend of the sub-threshold region slope in the actual environment.
Based on the above findings, the inventors set the thickness threshold to 7.6nm in the present embodiment. Of course, in other embodiments, the thickness threshold may be set to a value close to 7.6nm.
After it is determined that the thickness of the oxide layer is greater than the thickness threshold, step S230 is further performed. If the thickness of the oxide layer is determined to be smaller than the thickness threshold value, step S260 is further performed.
S230, the concentration threshold of acceptor charges is decreased.
Specifically, the reducing the concentration threshold of the acceptor charge may include the following steps:
and S231, calculating the ratio of the difference between the thickness of the oxide layer and the thickness threshold value to the thickness threshold value.
That is, the ratio of the difference in the thickness threshold is calculated from the difference between the thickness of the oxide layer and the thickness threshold, and the thickness threshold is executed.
And S232, reducing the concentration threshold of the acceptor charges according to the ratio of the difference value to the thickness threshold.
Specifically, the concentration threshold of acceptor charges is reduced by:
s2321, calculating the product of the concentration threshold of the acceptor charges and the proportion.
S2322, calculating the difference between the concentration threshold and the product to obtain the reduced concentration threshold.
After the density threshold value after the acceptor charges are reduced is obtained, step S240 is performed.
And S240, uniformly distributing the reduced acceptor charges with the concentration threshold in a preset conduction band bottom range of the device interface.
The preset range of the guide belt bottom is a numerical value set by human experience, and is not limited specifically here. And after the concentration threshold value of the reduced acceptor charges is obtained, uniformly distributing the reduced acceptor charges with the concentration threshold value in a preset conduction band bottom range of the device interface. The preset range of the guide belt bottom can be a range of Ec-5meV to Ec +25meV, and can also be other ranges set according to actual conditions.
And after the reduced acceptor charges with the concentration threshold are uniformly distributed in the preset range of the conduction band bottom of the device interface, executing step S250.
And S250, executing a simulation process of the sub-threshold region slope at the extremely low temperature in the TCAD simulation system.
If the thickness of the oxide layer is determined to be smaller than the thickness threshold value through the judgment, the step S260 is further performed.
S260, increase the density threshold of acceptor charges.
Specifically, the concentration threshold of acceptor charges may be increased by:
and S261, calculating the ratio of the difference between the thickness of the oxide layer and the thickness threshold value to the thickness threshold value.
And S262, increasing the concentration threshold of the acceptor charges according to the ratio of the difference value to the thickness threshold.
Specifically, step S262 includes the following steps:
s2621, a product of the concentration threshold of acceptor charges and the ratio is calculated.
S2622, calculating a difference value between the concentration threshold and the product to obtain the increased concentration threshold.
The preset range of the bottom of the guide belt is a value set by human experience, and is not limited specifically herein. And after the increased concentration threshold of the acceptor charges is obtained, uniformly distributing the reduced acceptor charges with the concentration threshold in a preset conduction band bottom range of the device interface. The preset range of the bottom of the guide belt can be a range from Ec-5meV to Ec +25meV, and can also be other ranges set according to actual conditions.
And after the reduced acceptor charges of the concentration threshold are uniformly distributed in the preset range of the conduction band bottom of the device interface, executing step S270.
And S270, uniformly distributing the increased acceptor charges with the concentration threshold in a preset conduction band bottom range of the device interface.
S280, executing a sub-threshold region slope simulation process at a very low temperature in a TCAD simulation system.
And uniformly distributing the reduced acceptor charges with the concentration threshold in a preset range of the conduction band bottom of the device interface.
Compared with the prior art, based on the subthreshold region slope correction method shown in fig. 2, the inventors of the present application found that, in the TCAD simulation system, for a MOS device with an oxide layer thickness =7.6nm, under the condition of 5K simulation, a concentration of 6 × 10 is introduced at the device interface 13 cm 3 The acceptor charges are uniformly distributed at the conduction band, simulation is carried out at the moment, and the slope of the subthreshold region can enter a saturation trend within a very low temperature range; therefore, acceptor charges with certain concentration are uniformly distributed in the conduction band bottom preset range of the device interface, so that the slope simulation of the subthreshold region at the extremely low temperature in the TCAD simulation system is consistent with experimental data, the problem that the result of device simulation performed by the traditional TCAD simulation system under the extremely low temperature condition is inconsistent with the actual condition is solved, and the simulation accuracy is improved.
The sub-threshold slope simulation method provided in the embodiment of the present application is described in detail above with reference to fig. 2. The following describes in detail a TCAD simulation system for performing the sub-threshold region slope simulation method provided in the embodiment of the present application with reference to fig. 3.
Exemplarily, referring to fig. 3, fig. 3 is a schematic block diagram of a TCAD simulation system according to an exemplary embodiment of the present application, and corresponding to the flow shown in fig. 2, the TCAD simulation system 400 includes:
an obtaining module 410, configured to obtain a thickness of an oxide layer of a device in a TCAD simulation system;
a determining module 420, configured to determine whether the thickness of the oxide layer is greater than a thickness threshold;
a processing module 430 configured to, if so, decrease a concentration threshold of acceptor charges; uniformly distributing the reduced acceptor charges with the concentration threshold in a preset range of the conduction band bottom of the device interface; and executing a sub-threshold region slope simulation flow at the extremely low temperature in a TCAD simulation system.
An embodiment of the present application further provides a storage medium, where a computer program is stored, where the computer program is configured to execute the steps in any one of the method embodiments when the computer program is executed.
Specifically, in the present embodiment, the storage medium may be configured to store a computer program for executing the steps of:
s210, obtaining the thickness of an oxide layer of a device in a TCAD simulation system;
s220, judging whether the thickness of the oxidation layer is larger than a thickness threshold value or not;
s230, if yes, reducing the concentration threshold of acceptor charges;
s240, uniformly distributing the reduced acceptor charges of the concentration threshold value in a preset conduction band bottom range of the device interface;
and S250, executing a simulation flow of the sub-threshold region slope at the extremely low temperature in a TCAD simulation system.
Specifically, in this embodiment, the storage medium may include, but is not limited to: various media capable of storing computer programs, such as a usb disk, a Read-Only Memory (ROM), a Random Access Memory (RAM), a removable hard disk, a magnetic disk, or an optical disk.
An embodiment of the present application further provides an electronic device, which includes a memory and a processor, where the memory stores a computer program, and the processor is configured to execute the computer program to perform the steps in any of the above method embodiments.
Specifically, the electronic apparatus may further include a transmission device and an input/output device, wherein the transmission device is connected to the processor, and the input/output device is connected to the processor.
Specifically, in this embodiment, the processor may be configured to execute the following steps by a computer program:
s210, obtaining the thickness of an oxide layer of a device in a TCAD simulation system;
s220, judging whether the thickness of the oxidation layer is larger than a thickness threshold value or not;
s230, if yes, reducing the concentration threshold of acceptor charges;
s240, uniformly distributing the reduced acceptor charges of the concentration threshold value in a preset conduction band bottom range of the device interface;
and S250, executing a simulation process of the sub-threshold region slope at the extremely low temperature in the TCAD simulation system.
Optionally, the processor in the electronic device may be one or more. The processor may be implemented by hardware or by software. When implemented in hardware, the processor may be a logic circuit, an integrated circuit, or the like. When implemented in software, the processor may be a general-purpose processor implemented by reading software code stored in a memory.
Optionally, the memory in the electronic device may also be one or more. The memory may be integrated with the processor or may be separate from the processor, which is not limited in this application. For example, the memory may be a non-transitory processor, such as a read only memory ROM, which may be integrated with the processor on the same chip or separately disposed on different chips, and the type of the memory and the arrangement of the memory and the processor are not particularly limited in this application.
The electronic device may be, for example, a Field Programmable Gate Array (FPGA), an Application Specific Integrated Circuit (ASIC), a system on chip (SoC), a Central Processor Unit (CPU), a Network Processor (NP), a Digital Signal Processor (DSP), a Microcontroller (MCU), a Programmable Logic Device (PLD) or other integrated chips.
It should be understood that the processor in the embodiments of the present application may be a Central Processing Unit (CPU), and the processor may also be other general purpose processors, digital Signal Processors (DSPs), application Specific Integrated Circuits (ASICs), field Programmable Gate Arrays (FPGAs) or other programmable logic devices, discrete gate or transistor logic devices, discrete hardware components, etc. A general purpose processor may be a microprocessor or the processor may be any conventional processor or the like.
It will also be appreciated that the memory in the embodiments of the subject application can be either volatile memory or nonvolatile memory, or can include both volatile and nonvolatile memory. The non-volatile memory may be a read-only memory (ROM), a Programmable ROM (PROM), an Erasable PROM (EPROM), an Electrically Erasable PROM (EEPROM), or a flash memory. Volatile memory can be Random Access Memory (RAM), which acts as external cache memory. By way of example, but not limitation, many forms of Random Access Memory (RAM) are available, such as Static RAM (SRAM), dynamic RAM (DRAM), synchronous DRAM (SDRAM), double data rate SDRAM (DDR SDRAM), enhanced SDRAM (ESDRAM), synchlink DRAM (SLDRAM), and direct bus RAM (DR RAM).
The TCAD simulation system, the storage medium and the electronic equipment provided by the application belong to the same inventive concept with the sub-threshold region slope simulation method, so that the TCAD simulation system, the storage medium and the electronic equipment have the same beneficial effects and are not repeated herein.
The above embodiments may be implemented in whole or in part by software, hardware (e.g., circuitry), firmware, or any combination thereof. When implemented in software, the above-described embodiments may be implemented in whole or in part in the form of a computer program product. The computer program product comprises one or more computer instructions or computer programs. The procedures or functions according to the embodiments of the present application are wholly or partially generated when the computer instructions or the computer program are loaded or executed on a computer. The computer may be a general purpose computer, a special purpose computer, a network of computers, or other programmable device. The computer instructions may be stored in a computer readable storage medium or transmitted from one computer readable storage medium to another computer readable storage medium, for example, the computer instructions may be transmitted from one website, computer, server, or data center to another website, computer, server, or data center by wire (e.g., infrared, wireless, microwave, etc.). The computer-readable storage medium can be any available medium that can be accessed by a computer or a data storage device such as a server, data center, etc. that contains one or more collections of available media. The usable medium may be a magnetic medium (e.g., floppy disk, hard disk, magnetic tape), an optical medium (e.g., DVD), or a semiconductor medium. The semiconductor medium may be a solid state disk.
It should be understood that the term "and/or" herein is merely one type of association relationship that describes an associated object, meaning that three relationships may exist, e.g., a and/or B may mean: a exists alone, A and B exist simultaneously, and B exists alone, wherein A and B can be singular or plural. In addition, the "/" in this document generally indicates that the former and latter associated objects are in an "or" relationship, but may also indicate an "and/or" relationship, and may be understood with particular reference to the former and latter contexts.
In the present application, "at least one" means one or more, "a plurality" means two or more. "at least one of the following" or similar expressions refer to any combination of these items, including any combination of the singular or plural items. For example, at least one (one) of a, b, or c, may represent: a, b, c, a-b, a-c, b-c, or a-b-c, wherein a, b, c may be single or multiple.
It should be understood that, in the various embodiments of the present application, the sequence numbers of the above-mentioned processes do not mean the execution sequence, and the execution sequence of each process should be determined by its function and inherent logic, and should not constitute any limitation to the implementation process of the embodiments of the present application.
Those of ordinary skill in the art will appreciate that the various illustrative elements and algorithm steps described in connection with the embodiments disclosed herein may be implemented as electronic hardware or combinations of computer software and electronic hardware. Whether such functionality is implemented as hardware or software depends upon the particular application and design constraints imposed on the technical solution. Skilled artisans may implement the described functionality in varying ways for each particular application, but such implementation decisions should not be interpreted as causing a departure from the scope of the present application.
It is clear to those skilled in the art that, for convenience and brevity of description, the specific working processes of the above-described systems, apparatuses and units may refer to the corresponding processes in the foregoing method embodiments, and are not described herein again.
In the several embodiments provided in the present application, it should be understood that the disclosed system, apparatus and method may be implemented in other ways. For example, the above-described apparatus embodiments are merely illustrative, and for example, the division of the units is only one type of logical functional division, and other divisions may be realized in practice, for example, multiple units or components may be combined or integrated into another system, or some features may be omitted, or not executed. In addition, the shown or discussed mutual coupling or direct coupling or communication connection may be an indirect coupling or communication connection through some interfaces, devices or units, and may be in an electrical, mechanical or other form.
The units described as separate parts may or may not be physically separate, and parts displayed as units may or may not be physical units, may be located in one place, or may be distributed on a plurality of network units. Some or all of the units can be selected according to actual needs to achieve the purpose of the solution of the embodiment.
In addition, functional units in the embodiments of the present application may be integrated into one processing unit, or each unit may exist alone physically, or two or more units are integrated into one unit.
The functions may be stored in a computer-readable storage medium if they are implemented in the form of software functional units and sold or used as separate products. Based on such understanding, the technical solutions of the present application or portions thereof that substantially contribute to the prior art may be embodied in the form of a software product, which is stored in a storage medium and includes several instructions for causing a computer device (which may be a personal computer, a server, or a network device) to execute all or part of the steps of the methods described in the embodiments of the present application. And the aforementioned storage medium includes: various media capable of storing program codes, such as a usb disk, a removable hard disk, a read-only memory (ROM), a Random Access Memory (RAM), a magnetic disk, or an optical disk.
The above description is only for the specific embodiments of the present application, but the scope of the present application is not limited thereto, and any person skilled in the art can easily conceive of the changes or substitutions within the technical scope of the present application, and shall be covered by the scope of the present application. Therefore, the protection scope of the present application shall be subject to the protection scope of the claims.

Claims (10)

1. A sub-threshold region slope simulation method is characterized by comprising the following steps:
obtaining the thickness of an oxide layer of a device in a TCAD simulation system;
judging whether the thickness of the oxide layer is larger than a thickness threshold value or not;
if so, reducing the concentration threshold of acceptor charges;
uniformly distributing the reduced acceptor charges with the concentration threshold in a preset range of the conduction band bottom of the device interface;
and executing a simulation flow of the sub-threshold region slope at the extremely low temperature in the TCAD simulation system.
2. The method of claim 1, wherein reducing the concentration threshold of acceptor charges comprises:
calculating the ratio of the difference between the thickness of the oxide layer and the thickness threshold value to the thickness threshold value;
and reducing the concentration threshold of the acceptor charges according to the ratio of the difference to the thickness threshold.
3. The method of claim 2, wherein reducing a concentration threshold of acceptor charges as a function of a ratio of the difference to the thickness threshold comprises:
calculating the product of the concentration threshold of acceptor charges and the ratio;
calculating a difference between the concentration threshold and the product to obtain the reduced concentration threshold.
4. The method of claim 1, wherein if the oxide layer thickness is less than a thickness threshold, the method further comprises:
increasing a concentration threshold of acceptor charges;
uniformly distributing the increased acceptor charges with the concentration threshold within a preset range of the conduction band bottom of the device interface;
and executing a sub-threshold region slope simulation flow at the extremely low temperature in a TCAD simulation system.
5. The method of claim 4, wherein increasing the concentration threshold of acceptor charges comprises:
calculating the ratio of the difference between the thickness of the oxide layer and the thickness threshold value to the thickness threshold value;
and increasing the concentration threshold of the acceptor charges according to the ratio of the difference to the thickness threshold.
6. The method of claim 5, wherein increasing a concentration threshold of acceptor charges based on a ratio of the difference to the thickness threshold comprises:
calculating the product of the concentration threshold of acceptor charges and the ratio;
calculating a difference between the concentration threshold and the product to obtain the increased concentration threshold.
7. A TCAD simulation system, the system comprising:
the acquisition module is used for acquiring the thickness of an oxide layer of a device in the TCAD simulation system;
the judging module is used for judging whether the thickness of the oxide layer is greater than a thickness threshold value;
a processing module for reducing the concentration threshold of acceptor charges if so; uniformly distributing the reduced acceptor charges with the concentration threshold within a preset range of the conduction band bottom of the device interface; and executing a sub-threshold region slope simulation process at extremely low temperature in a TCAD simulation system.
8. The system of claim 7, wherein the processing module comprises:
the calculating unit is used for calculating the ratio of the difference value of the thickness of the oxidation layer and the thickness threshold value to the thickness threshold value;
and a reducing unit configured to reduce a density threshold of acceptor charges according to a ratio of the difference to the thickness threshold.
9. A storage medium, in which a computer program is stored, which computer program is arranged to, when executed, perform the method of any one of claims 1 to 6.
10. An electronic device, comprising a memory having a computer program stored therein and a processor configured to execute the computer program to perform the method of any of claims 1 to 6.
CN202210764884.2A 2022-06-30 2022-06-30 Sub-threshold region slope simulation method, TCAD simulation system, storage medium and device Pending CN115238626A (en)

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