CN115048841A - Electrothermal coupling analysis method of passive circuit and simulation terminal - Google Patents
Electrothermal coupling analysis method of passive circuit and simulation terminal Download PDFInfo
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Abstract
The invention provides an electrothermal coupling analysis method of a passive circuit and a simulation terminal. The method comprises the following steps: transferring the energy loss parameters in the electromagnetic field simulation model to the thermal simulation model; determining whether the ratio of the first circuit energy loss obtained by the simulation of the electromagnetic field simulation model to the second energy loss obtained by the simulation of the thermal simulation model is within a first preset range; if the parameters are not in the preset range, the parameters between the two models are transmitted inaccurately, the meshing is unreasonable, and the two models need to be meshed again until the requirements are met. According to the invention, parameters in the thermal simulation model are corrected according to the electromagnetic field simulation model, so that the accuracy of the thermal simulation model is effectively improved, and an accurate temperature simulation result can be obtained by utilizing the thermal simulation model, thereby effectively guiding heat dissipation and reliability optimization.
Description
Technical Field
The invention relates to the technical field of communication, in particular to an electrothermal coupling analysis method of a passive circuit and a simulation terminal.
Background
With the rapid development of modern wireless communication technology, the requirement of a communication system on a microwave circuit is higher and higher, and the microwave circuit is continuously developed towards miniaturization, integration, high frequency and high power. For a high-power microwave circuit, due to the fact that input power is high, heat dissipation environments of structural discontinuous parts such as circuit gaps and interconnecting wires are poor, local temperature rise is serious, high-power discharge, breakdown and burnout faults are prone to occurring in the using process, and unnecessary loss is brought.
In the prior art, passive circuits such as a high-power microwave circuit and the like lack the numerical analysis of electrothermal coupling, and the reliability of the circuit is not high enough.
Disclosure of Invention
The embodiment of the invention provides an electrothermal coupling analysis method of a passive circuit and a simulation terminal, and aims to solve the problems that the passive circuit in the prior art is lack of electrothermal coupling numerical analysis and the reliability of the circuit is not high enough.
In a first aspect, an embodiment of the present invention provides a method for analyzing electrothermal coupling of a passive circuit, including:
establishing an electromagnetic field simulation model and a thermal simulation model of a target circuit; wherein, the electromagnetic field simulation model and the thermal simulation model are both gridding models;
simulating the electromagnetic field simulation model to obtain energy loss parameters corresponding to each node in the electromagnetic field simulation model, and updating the energy loss parameters corresponding to each node in the thermal simulation model according to the energy loss parameters corresponding to each node in the electromagnetic field simulation model;
determining a first circuit energy loss value of a target circuit according to energy loss parameters corresponding to each node in the electromagnetic field simulation model, and determining a second circuit energy loss value of the target circuit according to the energy loss parameters corresponding to each node in the thermal simulation model;
determining whether a ratio of the first circuit energy loss to the second circuit energy loss is within a first preset range;
if so, taking the current thermal simulation model as a first target thermal simulation model;
if not, respectively carrying out meshing on the electromagnetic field simulation model and the thermal simulation model again, jumping to the step of simulating the electromagnetic field simulation model to obtain energy loss parameters corresponding to all nodes in the electromagnetic field simulation model, and updating the energy loss parameters corresponding to all nodes in the thermal simulation model according to the energy loss parameters corresponding to all nodes in the electromagnetic field simulation model to continue to execute;
and carrying out simulation analysis on the target circuit by adopting the first target thermal simulation model.
In a second aspect, an embodiment of the present invention provides an emulation terminal, which includes a memory, a processor, and a computer program stored in the memory and executable on the processor, where the processor executes the computer program to implement the steps of the method according to the first aspect or any one of the possible implementation manners of the first aspect.
The embodiment of the invention provides an electrothermal coupling analysis method of a passive circuit and a simulation terminal. The method comprises the following steps: establishing an electromagnetic field simulation model and a thermal simulation model of a target circuit; wherein, the electromagnetic field simulation model and the thermal simulation model are both gridding models; simulating the electromagnetic field simulation model to obtain energy loss parameters corresponding to each node in the electromagnetic field simulation model, and updating the energy loss parameters corresponding to each node in the thermal simulation model according to the energy loss parameters corresponding to each node in the electromagnetic field simulation model; determining a first circuit energy loss value of a target circuit according to energy loss parameters corresponding to each node in the electromagnetic field simulation model, and determining a second circuit energy loss value of the target circuit according to the energy loss parameters corresponding to each node in the thermal simulation model; determining whether a ratio of the first circuit energy loss to the second circuit energy loss is within a first preset range; if so, taking the current thermal simulation model as a first target thermal simulation model; if not, respectively carrying out meshing on the electromagnetic field simulation model and the thermal simulation model again, jumping to the step of simulating the electromagnetic field simulation model to obtain energy loss parameters corresponding to all nodes in the electromagnetic field simulation model, and updating the energy loss parameters corresponding to all nodes in the thermal simulation model according to the energy loss parameters corresponding to all nodes in the electromagnetic field simulation model to continue to execute; and carrying out simulation analysis on the target circuit by adopting the first target thermal simulation model. According to the embodiment of the invention, the energy loss parameter is obtained by adopting the simulation of the electromagnetic field simulation model, and then is transmitted to the thermal simulation model for thermal simulation. The precision of energy loss parameter transmission plays a crucial role in the accuracy of the simulation result of the thermal simulation model. The embodiment of the invention fully considers the energy transfer precision between the electromagnetic field simulation model and the thermal simulation model, ensures the precision of parameter transfer between the two models, effectively improves the accuracy of the thermal simulation model, and can obtain an accurate temperature simulation result by utilizing the thermal simulation model, thereby effectively guiding a user to carry out heat dissipation and reliability optimization on a target circuit.
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In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the drawings needed to be used in the embodiments or the prior art descriptions will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art to obtain other drawings based on these drawings without inventive exercise.
FIG. 1 is a flowchart illustrating an implementation of a method for analyzing electrothermal coupling of a passive circuit according to an embodiment of the present invention;
FIG. 2 is a schematic structural diagram of an electrothermal coupling analysis device of a passive circuit according to an embodiment of the present invention;
fig. 3 is a schematic diagram of an emulation terminal provided in an embodiment of the present invention.
Detailed Description
In the following description, for purposes of explanation and not limitation, specific details are set forth, such as particular system structures, techniques, etc. in order to provide a thorough understanding of the embodiments of the invention. It will be apparent, however, to one skilled in the art that the present invention may be practiced in other embodiments that depart from these specific details. In other instances, detailed descriptions of well-known systems, devices, circuits, and methods are omitted so as not to obscure the description of the present invention with unnecessary detail.
In order to make the objects, technical solutions and advantages of the present invention more apparent, the following description is made by way of specific embodiments with reference to the accompanying drawings.
Referring to fig. 1, it shows a flowchart of an implementation of the method for analyzing the electrothermal coupling of the passive circuit according to the embodiment of the present invention, which is detailed as follows:
s101: establishing an electromagnetic field simulation model and a thermal simulation model of a target circuit; wherein, the electromagnetic field simulation model and the thermal simulation model are both gridding models;
s102: simulating the electromagnetic field simulation model to obtain energy loss parameters corresponding to each node in the electromagnetic field simulation model, and updating the energy loss parameters corresponding to each node in the thermal simulation model according to the energy loss parameters corresponding to each node in the electromagnetic field simulation model;
s103: determining a first circuit energy loss value of a target circuit according to energy loss parameters corresponding to each node in the electromagnetic field simulation model, and determining a second circuit energy loss value of the target circuit according to the energy loss parameters corresponding to each node in the thermal simulation model;
s104: determining whether a ratio of the first circuit energy loss to the second circuit energy loss is within a first preset range;
s105: if so, taking the current thermal simulation model as a first target thermal simulation model;
s106: if not, respectively carrying out meshing on the electromagnetic field simulation model and the thermal simulation model again, jumping to the step of simulating the electromagnetic field simulation model to obtain energy loss parameters corresponding to all nodes in the electromagnetic field simulation model, and updating the energy loss parameters corresponding to all nodes in the thermal simulation model according to the energy loss parameters corresponding to all nodes in the electromagnetic field simulation model to continue to execute;
s107: and carrying out simulation analysis on the target circuit by adopting the first target thermal simulation model.
In the embodiment of the invention, the energy loss parameters corresponding to each node are obtained by adopting an electromagnetic field simulation model to simulate the nodes of the finite element grid, and then are transmitted to the thermal simulation model, so that the parameters of the thermal simulation model are perfected. Because the grid division of the electromagnetic field simulation model and the thermal simulation model may not be consistent, deviation may occur in the energy loss parameter transfer process, thereby causing the simulation result of the thermal simulation model to be inaccurate. Therefore, in the embodiment of the invention, after each parameter transmission is completed, the energy loss value (first circuit energy loss value) obtained by simulating the electromagnetic field simulation model and the energy loss value (first circuit energy loss value) obtained by simulating the thermal simulation model are judged, if the two values are basically consistent, namely the ratio of the two values is within a first preset range, the parameter transmission precision between the two models meets the requirement, the grid division is reasonable, the parameters are accurate, the thermal simulation model is accurate, and the accurate temperature simulation result can be obtained by simulating the thermal simulation model, so that the heat dissipation and the reliability optimization are effectively guided.
Since the circuit includes a conductor and a medium, energy loss can be divided into conductor loss and dielectric loss. Conductor loss refers to energy loss on the signal path and return path; the dielectric loss refers to the energy loss caused by the hysteresis effect of dielectric conductance and dielectric polarization in the insulating material under the action of an electric field. Conductor loss is related to the surface loss density of conductor lines due to the "skin effect" of metal; the dielectric loss is related to the bulk loss density of the dielectric substrate. Thus, the energy loss parameters include: the surface loss density of the conductor lines and the bulk loss density of the dielectric substrate.
In one possible embodiment, the first predetermined range may be 0.8 to 1.2.
The first circuit energy loss value and the second circuit energy loss value are basically consistent, parameter transmission is accurate, and the thermal simulation model is more accurate correspondingly.
In a possible implementation manner, before S107, the analysis method may further include:
s108: correcting the first target simulation model to obtain a second target thermal simulation model;
s107 specifically comprises the following steps: and carrying out simulation analysis on the target circuit by adopting a second target thermal simulation model.
In one possible implementation, S108 may include:
s1081: simulating the target circuit by adopting a first target thermal simulation model to obtain a first temperature sequence of the target circuit, and recording the maximum value in the first temperature sequence as a first temperature;
s1082: updating material parameters in the first target thermal simulation model according to the first temperature sequence to obtain a new first target simulation model;
s1083: simulating the target circuit by adopting a new first target thermal simulation model to obtain a second temperature sequence of the target circuit, and recording the maximum value in the second temperature sequence as a second temperature;
s1084: determining whether the difference between the second temperature and the first temperature is within a second preset range;
s1085: if so, taking the new first target simulation model as a second target simulation model;
s1086: and if not, taking the second temperature sequence as a new first temperature sequence, and skipping to the step of updating the material parameters in the first target thermal simulation model according to the first temperature sequence to obtain a new first target simulation model to continue executing.
When the thermal simulation model is established, the initial material parameter is set as the material parameter value at the reference temperature. The material parameters of the thermal simulation model deviate from the actual values because the temperature of the circuit affects the material parameters (e.g., electrical conductivity and thermal conductivity) of the circuit. For example, the difference between the electrical conductivity of the gold material at normal temperature and the value at 300 ℃ is 2 times, which seriously affects the accuracy of the thermal simulation model. Therefore, in the embodiment of the invention, the thermal simulation model is continuously corrected according to the temperature sequence obtained by simulation, the difference of the highest temperature obtained by the simulation of the thermal simulation model before and after correction is compared, and if the difference of the two highest temperature values is almost the same, the parameters of the thermal simulation model are reasonable. The material parameter setting of the thermal simulation model considering the temperature influence is more reasonable, and the accuracy is greatly improved.
The thermal simulation model comprises a plurality of conductor line nodes and dielectric substrate nodesThe temperature of each conductor line node and the temperature of each dielectric substrate node form a first temperature sequence and a second temperature sequence. The arrangement sequence of the temperatures of the nodes is not limited, and the temperature values in the first temperature sequence correspond to the temperature values in the second temperature sequence one to one. For example, the first temperature sequence may be (T) 11 ，T 12 ，…T 1k …T 1K ,T 21 ,T 22 …T 2q …T 2Q ) (ii) a Wherein, T 1k The temperature value of the kth node of the conductor line in the first target thermal simulation model is obtained; k is 1, …, K is the total number of nodes of the conductor line in the first target thermal simulation model; t is 2q The temperature of the q-th node of the dielectric substrate; q is 1, …, Q being the total number of nodes of the media substrate in the first target thermal simulation model.
In one possible embodiment, the material parameters may include: electrical conductivity.
The material parameter related to conductor loss includes electrical conductivity and the material parameter related to dielectric loss includes thermal conductivity. For most passive circuits, the dielectric loss generated by the transmission line when the transmission line is in overcurrent is small relative to the conductor loss and can be almost ignored. Therefore, when the influence of the temperature on the thermal simulation model is considered, only the conductivity can be considered, the result is relatively accurate, and the calculation complexity is reduced.
In one possible embodiment, the material parameters may include: electrical conductivity; s1082 may include:
updating the conductivity in the first target thermal simulation model according to the first temperature sequence and the second formula; the second formula may be:
wherein σ 1k Updated conductivity, rho, for the kth node of the conductor line in the first target thermal simulation model ref Is the resistivity at a reference temperature, alpha is the temperature coefficient of resistivity, T ref For reference temperature, T 1k The temperature value of the kth node of the conductor line in the first target thermal simulation model is obtained; k is 1, …, K being the total number of nodes of the conductor line in the first target thermal simulation model.
Further, the material parameters may also include: thermal conductivity.
Because the heat conduction mechanism and the process of the medium material are very complex, quantitative analysis is difficult to give, the corresponding relation between the heat conductivity and the temperature of the specific material can be determined through experiments, and the heat conductivity is updated according to the first temperature aiming at the known heat conductivity-temperature corresponding relation curve. For example, the correspondence of the thermal conductivity of the SiC substrate to the temperature is approximately:
K SiC ＝390×(T 2q /293) -1.49
wherein, K SiC Is the thermal conductivity of SiC, T 2q The temperature of the q-th node of the dielectric substrate; q is 1, …, Q is the total number of nodes of the dielectric substrate in the first target thermal simulation model.
In a possible embodiment, the second preset range may be-1 ° to 1 °.
In the embodiment of the invention, the highest temperature obtained by two times of simulation of the thermal simulation model before and after updating is required to be basically not different, and the second preset range is an error range and can be set according to the actual precision requirement.
In one possible embodiment, the energy loss parameters include: the surface loss density of the conductor lines and the volume loss density of the dielectric substrate; s103 may include:
s1031: calculating to obtain a first circuit energy loss value of the target circuit according to energy loss parameters corresponding to each node in the electromagnetic field simulation model and by combining a first formula;
the first formula may be:
wherein q is 1i Surface loss density of i-th node of conductor line in electromagnetic field simulation model, q 2j Is electromagneticVolume loss density, N, of the jth node of the dielectric substrate in the field simulation model i Numbering the i-th node of a conductor line in an electromagnetic field simulation model, M j Numbering the jth node of the dielectric substrate in the electromagnetic field simulation model; i is 1, …, n, j is 1, …, m, n is the total number of nodes of the conductor line in the electromagnetic field simulation model, and m is the total number of nodes of the dielectric substrate in the electromagnetic field simulation model.
The energy loss parameters include: the surface loss density of the conductor line and the volume loss density of the dielectric substrate can be calculated according to a first formula to obtain the dielectric loss value of each node and the conductor loss value of each node, and the dielectric loss values and the conductor loss values of the nodes are added to obtain the total energy loss value, namely the first circuit energy loss value.
The calculation method of the energy loss value of the second circuit is the same as above, and is not described herein again.
In one possible implementation, S102 may include:
s1021: and obtaining and updating the energy loss parameters corresponding to the nodes in the thermal simulation model by adopting an interpolation method according to the energy loss parameters corresponding to the nodes in the electromagnetic field simulation model.
In the embodiment of the invention, since the node division of the electromagnetic field simulation model and the thermal simulation model may not be consistent, for example, the electromagnetic field simulation model has 30 nodes, and the thermal simulation model has 40 nodes. Therefore, 30 sets of energy loss parameters corresponding to the electromagnetic field simulation model cannot directly correspond to 40 nodes of the thermal simulation model. Therefore, in the embodiment of the invention, interpolation is adopted to assign 30 groups of energy loss parameters of the electromagnetic field simulation model to 40 nodes of the thermal simulation model.
In one possible implementation, the thermal simulation model of the target circuit may include an encapsulation structure of the target circuit.
Because the electromagnetic field simulation is not influenced by the package, and the thermal simulation is influenced by the package, the thermal simulation model in the embodiment of the invention considers the influence of the package structure on the circuit temperature, is closer to the circuit, and has more accurate simulation result.
Based on the above, the method provided by the embodiment of the invention is adopted to carry out electrothermal coupling simulation and actual test on the passive circuit comprising the pi-type attenuator, the highest temperature of the resistance part of the pi-type attenuator obtained by applying the simulation method is 246.6 ℃, the actual test result is 263.9 ℃, and the simulation error is 6.56%. Therefore, the simulation method provided by the implementation of the invention has the advantages of small error and high simulation accuracy, and can provide powerful support for the design of a high-power microwave passive circuit.
It should be understood that, the sequence numbers of the steps in the foregoing embodiments do not imply an execution sequence, and the execution sequence of each process should be determined by its function and inherent logic, and should not constitute any limitation to the implementation process of the embodiments of the present invention.
The following are embodiments of the apparatus of the invention, reference being made to the corresponding method embodiments described above for details which are not described in detail therein.
Fig. 2 is a schematic structural diagram of an electrothermal coupling analysis apparatus of a passive circuit according to an embodiment of the present invention, and for convenience of description, only the parts related to the embodiment of the present invention are shown, and detailed descriptions are as follows:
the electrothermal coupling analysis device of the passive circuit comprises:
a model establishing module 21, configured to establish an electromagnetic field simulation model and a thermal simulation model of the target circuit; wherein, the electromagnetic field simulation model and the thermal simulation model are both gridding models;
the parameter transmission module 22 is used for simulating the electromagnetic field simulation model to obtain energy loss parameters corresponding to each node in the electromagnetic field simulation model, and updating the energy loss parameters corresponding to each node in the thermal simulation model according to the energy loss parameters corresponding to each node in the electromagnetic field simulation model;
the loss calculation module 23 is configured to determine a first circuit energy loss value of the target circuit according to the energy loss parameter corresponding to each node in the electromagnetic field simulation model, and determine a second circuit energy loss value of the target circuit according to the energy loss parameter corresponding to each node in the thermal simulation model;
a ratio calculation module 24, configured to determine whether a ratio of the first circuit energy loss to the second circuit energy loss is within a first preset range;
a first judging module 25, configured to, if yes, take the current thermal simulation model as a first target thermal simulation model;
the second judging module 26 is configured to, if not, perform meshing on the electromagnetic field simulation model and the thermal simulation model again, skip to the step of obtaining an energy loss parameter corresponding to each node in the electromagnetic field simulation model by simulating the electromagnetic field simulation model, and update the energy loss parameter corresponding to each node in the thermal simulation model according to the energy loss parameter corresponding to each node in the electromagnetic field simulation model;
and the simulation analysis module 27 is configured to perform simulation analysis on the target circuit by using the first target thermal simulation model.
In a possible implementation, the apparatus may further include:
the model correction module 28 is configured to correct the first target simulation model to obtain a second target thermal simulation model;
the simulation analysis module 27 may be specifically configured to: and carrying out simulation analysis on the target circuit by adopting a second target thermal simulation model.
In one possible implementation, the model modification module 28 may include:
the first temperature calculation unit 281 is configured to simulate the target circuit by using a first target thermal simulation model to obtain a first temperature sequence of the target circuit, and record a maximum value in the first temperature sequence as a first temperature;
a model updating unit 282, configured to update the material parameter in the first target thermal simulation model according to the first temperature sequence, so as to obtain a new first target simulation model;
the second temperature calculation unit 283 is configured to simulate the target circuit by using the new first target thermal simulation model to obtain a second temperature sequence of the target circuit, and record a maximum value in the second temperature sequence as a second temperature;
a difference calculation unit 284 for determining whether a difference between the second temperature and the first temperature is within a second preset range;
a first judging unit 285, configured to, if yes, take the new first target simulation model as the second target simulation model;
and a second determining unit 286, configured to, if not, take the second temperature sequence as a new first temperature sequence, and skip to the step of updating the material parameters in the first target thermal simulation model according to the first temperature sequence, so as to obtain a new first target simulation model, and continue to execute the step.
In one possible embodiment, the material parameters may include: electrical conductivity.
In a possible embodiment, the second preset range may be-1 ° to 1 °.
In one possible embodiment, the energy loss parameters include: the surface loss density of the conductor lines and the volume loss density of the dielectric substrate; the loss calculation module 23 may include:
the formula calculation unit 231 is used for calculating a first circuit energy loss value of the target circuit according to the energy loss parameters corresponding to each node in the electromagnetic field simulation model by combining the first formula;
the first formula may be:
wherein q is 1i Surface loss density of i-th node of conductor line in electromagnetic field simulation model, q 2j Is the volume loss density, N, of the j-th node of the dielectric substrate in the electromagnetic field simulation model i Numbering the i-th node of a conductor line in an electromagnetic field simulation model, M j Numbering the jth node of the dielectric substrate in the electromagnetic field simulation model; i is 1, …, n, j is 1, …, m, n is the total number of nodes of the conductor line in the electromagnetic field simulation model, and m is the total number of nodes of the dielectric substrate in the electromagnetic field simulation model.
In a possible implementation, the second determining module 26 may include:
and the interpolation transfer unit 261 is configured to obtain and update the energy loss parameters corresponding to the nodes in the thermal simulation model by using an interpolation method according to the energy loss parameters corresponding to the nodes in the electromagnetic field simulation model.
In one possible embodiment, the first predetermined range may be 0.8 to 1.2.
In one possible implementation, the thermal simulation model of the target circuit may include an encapsulation structure of the target circuit.
Fig. 3 is a schematic diagram of an emulation terminal provided in an embodiment of the present invention. As shown in fig. 3, the simulation terminal 5 of this embodiment includes: a processor 50 and a memory 51. The memory 51 is used for storing the computer program 52, and the processor 50 is used for calling and executing the computer program 52 stored in the memory 51, and executing the steps in the above-mentioned embodiments of the method for analyzing the electrothermal coupling of the passive circuit, such as the steps S101 to S107 shown in fig. 1. Alternatively, the processor 50 is configured to call and execute a computer program 52 stored in the memory 51, so as to implement the functions of the modules/units in the above-described device embodiments, such as the functions of the modules 21 to 27 shown in fig. 2.
Illustratively, the computer program 52 may be divided into one or more modules/units, which are stored in the memory 51 and executed by the processor 50 to carry out the invention. One or more of the modules/units may be a series of computer program instruction segments capable of performing specific functions, which are used to describe the execution of the computer program 52 in the simulation terminal 5. For example, the computer program 52 may be divided into the modules/units 21 to 27 shown in fig. 2.
The simulation terminal 5 may be a desktop computer, a notebook, a palm computer, a cloud server, or other computing devices. The emulation terminal 5 can include, but is not limited to, a processor 50, a memory 51. It will be appreciated by those skilled in the art that fig. 3 is merely an example of the emulated terminal 5 and does not constitute a limitation of the emulated terminal 5, and that it may comprise more or less components than shown, or some components may be combined, or different components, e.g. the terminal may further comprise input output devices, network access devices, buses, etc.
The Processor 50 may be a Central Processing Unit (CPU), other general purpose Processor, a Digital Signal Processor (DSP), an Application Specific Integrated Circuit (ASIC), a Field Programmable Gate Array (FPGA) or other Programmable logic device, discrete Gate or transistor logic, discrete hardware components, etc. A general purpose processor may be a microprocessor or the processor may be any conventional processor or the like.
The memory 51 may be an internal storage unit of the emulation terminal 5, such as a hard disk or a memory of the emulation terminal 5. The memory 51 may also be an external storage device of the emulation terminal 5, such as a plug-in hard disk, a Smart Media Card (SMC), a Secure Digital (SD) Card, a Flash memory Card (Flash Card), etc. provided on the emulation terminal 5. Further, the memory 51 may also include both an internal storage unit of the emulation terminal 5 and an external storage device. The memory 51 is used for storing computer programs and other programs and data required by the terminal. The memory 51 may also be used to temporarily store data that has been output or is to be output.
It will be apparent to those skilled in the art that, for convenience and brevity of description, only the above-mentioned division of the functional units and modules is illustrated, and in practical applications, the above-mentioned function distribution may be performed by different functional units and modules according to needs, that is, the internal structure of the apparatus is divided into different functional units or modules, so as to perform all or part of the functions described above. Each functional unit and module in the embodiments may be integrated in one processing unit, or each unit may exist alone physically, or two or more units are integrated in one unit, and the integrated unit may be implemented in a form of hardware, or in a form of software functional unit. In addition, specific names of the functional units and modules are only for convenience of distinguishing from each other, and are not used for limiting the protection scope of the present application. The specific working processes of the units and modules in the system may refer to the corresponding processes in the foregoing method embodiments, and are not described herein again.
In the above embodiments, the descriptions of the respective embodiments have respective emphasis, and reference may be made to the related descriptions of other embodiments for parts that are not described or illustrated in a certain embodiment.
Those of ordinary skill in the art will appreciate that the various illustrative elements and algorithm steps described in connection with the embodiments disclosed herein may be implemented as electronic hardware or combinations of computer software and electronic hardware. Whether such functionality is implemented as hardware or software depends upon the particular application and design constraints imposed on the implementation. Skilled artisans may implement the described functionality in varying ways for each particular application, but such implementation decisions should not be interpreted as causing a departure from the scope of the present invention.
In the embodiments provided in the present invention, it should be understood that the disclosed apparatus/terminal and method may be implemented in other ways. For example, the above-described apparatus/terminal embodiments are merely illustrative, and for example, a module or a unit may be divided into only one logical function, and may be implemented in other ways, for example, a plurality of units or components may be combined or integrated into another system, or some features may be omitted or not executed. In addition, the shown or discussed mutual coupling or direct coupling or communication connection may be an indirect coupling or communication connection through some interfaces, devices or units, and may be in an electrical, mechanical or other form.
Units described as separate parts may or may not be physically separate, and parts displayed as units may or may not be physical units, may be located in one place, or may be distributed on a plurality of network units. Some or all of the units can be selected according to actual needs to achieve the purpose of the solution of the embodiment.
In addition, functional units in the embodiments of the present invention may be integrated into one processing unit, or each unit may exist alone physically, or two or more units are integrated into one unit. The integrated unit can be realized in a form of hardware, and can also be realized in a form of a software functional unit.
The integrated modules/units, if implemented in the form of software functional units and sold or used as separate products, may be stored in a computer readable storage medium. Based on such understanding, all or part of the flow in the method according to the embodiments of the present invention may also be implemented by a computer program to instruct related hardware, where the computer program may be stored in a computer readable storage medium, and when the computer program is executed by a processor, the computer program may implement the steps of the embodiments of the method. Wherein the computer program comprises computer program code, which may be in the form of source code, object code, an executable file or some intermediate form, etc. The computer readable medium may include: any entity or device capable of carrying computer program code, recording medium, usb disk, removable hard disk, magnetic disk, optical disk, computer Memory, Read-Only Memory (ROM), Random Access Memory (RAM), electrical carrier wave signals, telecommunications signals, software distribution medium, and the like.
The above examples are only intended to illustrate the technical solution of the present invention, but not to limit it; although the present invention has been described in detail with reference to the foregoing embodiments, it will be understood by those of ordinary skill in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some technical features may be equivalently replaced; such modifications and substitutions do not substantially depart from the spirit and scope of the embodiments of the present invention, and are intended to be included within the scope of the present invention.
Claims (10)
1. An electrothermal coupling analysis method of a passive circuit, comprising:
establishing an electromagnetic field simulation model and a thermal simulation model of a target circuit; wherein the electromagnetic field simulation model and the thermal simulation model are both gridding models;
simulating the electromagnetic field simulation model to obtain energy loss parameters corresponding to each node in the electromagnetic field simulation model, and updating the energy loss parameters corresponding to each node in the thermal simulation model according to the energy loss parameters corresponding to each node in the electromagnetic field simulation model;
determining a first circuit energy loss value of the target circuit according to the energy loss parameters corresponding to the nodes in the electromagnetic field simulation model, and determining a second circuit energy loss value of the target circuit according to the energy loss parameters corresponding to the nodes in the thermal simulation model;
determining whether a ratio of the first circuit energy loss to the second circuit energy loss is within a first preset range;
if so, taking the current thermal simulation model as a first target thermal simulation model;
if not, respectively carrying out meshing on the electromagnetic field simulation model and the thermal simulation model again, jumping to the step of simulating the electromagnetic field simulation model to obtain energy loss parameters corresponding to all nodes in the electromagnetic field simulation model, and updating the energy loss parameters corresponding to all nodes in the thermal simulation model according to the energy loss parameters corresponding to all nodes in the electromagnetic field simulation model to continue to execute;
and carrying out simulation analysis on the target circuit by adopting the first target thermal simulation model.
2. The method of claim 1, wherein prior to said performing a simulation analysis of said target circuit using said first target thermal simulation model, said method of analyzing further comprises:
correcting the first target simulation model to obtain a second target thermal simulation model;
the performing simulation analysis on the target circuit by using the first target thermal simulation model includes:
and carrying out simulation analysis on the target circuit by adopting the second target thermal simulation model.
3. The method of claim 2, wherein the modifying the first target thermal simulation model to obtain a second target thermal simulation model comprises:
simulating the target circuit by adopting the first target thermal simulation model to obtain a first temperature sequence of the target circuit, and recording the maximum value in the first temperature sequence as a first temperature;
updating material parameters in the first target thermal simulation model according to the first temperature sequence to obtain a new first target simulation model;
simulating the target circuit by adopting the new first target thermal simulation model to obtain a second temperature sequence of the target circuit, and recording the maximum value in the second temperature sequence as a second temperature;
determining whether the difference between the second temperature and the first temperature is within a second preset range;
if so, taking the new first target simulation model as a second target simulation model;
and if not, taking the second temperature sequence as a new first temperature sequence, and skipping to the step of updating the material parameters in the first target thermal simulation model according to the first temperature sequence to obtain a new first target simulation model to continue execution.
4. The method of claim 3, wherein the material parameters comprise: electrical conductivity.
5. The method of claim 3, wherein the second predetermined range is from-1 ° to 1 °.
6. The method of claim 1, wherein the energy loss parameter comprises: the surface loss density of the conductor lines and the volume loss density of the dielectric substrate; the determining a first circuit energy loss value of the target circuit according to the energy loss parameters corresponding to the nodes in the electromagnetic field simulation model includes:
calculating to obtain a first circuit energy loss value of the target circuit according to energy loss parameters corresponding to each node in the electromagnetic field simulation model and by combining a first formula;
the first formula is:
wherein q is 1i Surface loss density q of the ith node of the conductor line in the electromagnetic field simulation model 2j Is the volume loss density, N, of the j-th node of the dielectric substrate in the electromagnetic field simulation model i Numbering the ith node of the conductor line in the electromagnetic field simulation model, M j Numbering a jth node of a medium substrate in the electromagnetic field simulation model; i is 1, …, n, j is 1, …, m, n is the total number of nodes of the conductor line in the electromagnetic field simulation model, and m is the total number of nodes of the medium substrate in the electromagnetic field simulation model.
7. The method for analyzing electrothermal coupling of a passive circuit according to any one of claims 1 to 6, wherein the updating the energy loss parameters corresponding to the nodes in the thermal simulation model according to the energy loss parameters corresponding to the nodes in the electromagnetic field simulation model comprises:
and obtaining and updating the energy loss parameters corresponding to the nodes in the thermal simulation model by adopting an interpolation method according to the energy loss parameters corresponding to the nodes in the electromagnetic field simulation model.
8. The method for analyzing electrothermal coupling of a passive circuit according to any one of claims 1 to 6, wherein the first predetermined range is 0.8 to 1.2.
9. The method according to any one of claims 1 to 6, wherein the thermal simulation model of the target circuit comprises a package structure of the target circuit.
10. An emulation terminal comprising a processor and a memory, the memory storing a computer program, the processor being configured to invoke and execute the computer program stored in the memory to perform the method of analyzing electro-thermal coupling of a passive circuit according to any of claims 1 to 9.
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