CN115220607A - OGS capacitive touch screen and manufacturing method thereof - Google Patents
OGS capacitive touch screen and manufacturing method thereof Download PDFInfo
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- CN115220607A CN115220607A CN202210893239.0A CN202210893239A CN115220607A CN 115220607 A CN115220607 A CN 115220607A CN 202210893239 A CN202210893239 A CN 202210893239A CN 115220607 A CN115220607 A CN 115220607A
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
- G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
- G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
- G06F3/044—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/0021—Reactive sputtering or evaporation
- C23C14/0036—Reactive sputtering
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/04—Coating on selected surface areas, e.g. using masks
- C23C14/042—Coating on selected surface areas, e.g. using masks using masks
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
- C23C14/083—Oxides of refractory metals or yttrium
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/10—Glass or silica
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
- C23C14/18—Metallic material, boron or silicon on other inorganic substrates
- C23C14/185—Metallic material, boron or silicon on other inorganic substrates by cathodic sputtering
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F2203/00—Indexing scheme relating to G06F3/00 - G06F3/048
- G06F2203/041—Indexing scheme relating to G06F3/041 - G06F3/045
- G06F2203/04102—Flexible digitiser, i.e. constructional details for allowing the whole digitising part of a device to be flexed or rolled like a sheet of paper
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F2203/00—Indexing scheme relating to G06F3/00 - G06F3/048
- G06F2203/041—Indexing scheme relating to G06F3/041 - G06F3/045
- G06F2203/04103—Manufacturing, i.e. details related to manufacturing processes specially suited for touch sensitive devices
Abstract
The invention relates to an OGS capacitive touch screen and a manufacturing method thereof, wherein an upper line circuit pattern die and a copper or titanium or silver upper line circuit die are respectively placed on the working surface of a glass cover plate to form an upper line circuit conductive layer and a copper or titanium or silver upper line circuit conductive layer in a magnetron sputtering mode, a silicon dioxide insulating barrier layer is formed in a magnetron sputtering mode, then a lower line circuit conductive layer and a copper or titanium or silver lower line circuit conductive layer are respectively formed in a magnetron sputtering mode through a lower line circuit pattern die and a copper or titanium or silver lower line circuit die, wherein the upper line circuit conductive pattern and the lower line circuit conductive pattern are of a three-layer film stacked structure, copper or titanium or silver is subjected to laser etching, a flexible line printed circuit board is bound, a conductive line with a narrower frame, thinner thickness, lighter weight and more stable performance is manufactured through the manufacturing method, and the OGS capacitive touch screen is manufactured through the manufacturing method.
Description
Technical Field
The invention relates to the technical field of OGS capacitive touch screens, in particular to an OGS capacitive touch screen and a manufacturing method thereof.
Background
The existing OGS capacitive touch screen has two structures: the GG structure and the GFF structure are respectively a glass + glass (short for GG) structure and a glass + film (short for GFF) structure, the thinnest of GG is 2.0mm (the size is 11.6-32 inches), the thinnest of GFF is 1.175mm (the size is 11.6-32 inches), the traditional GG structure or GFF structure is printed by silver paste, and a little sharp foreign matter is pressed, touched or cut, so that short circuit or broken line can be caused, the product is poor in function, and the product is scrapped.
The existing ITO glass of the touch screen cannot realize a narrow frame, the thickness is thicker, the narrowest frame at present can only achieve 45um (the size is 15.6-32 inches), especially a touch screen above 32 inches, the defect in the aspect is more prominent, the reason is that the narrow frame cannot be realized due to the channel property of lines, 122 channels are arranged in 32 inches, and the lines must be printed on the ITO conductive glass regardless of GG or GFF structures, and the narrow frame cannot be realized due to the limitation of equipment.
In the earliest manufacturing of a mobile phone touch screen, a metal bridging process is used, single-side plating is performed, a product is manufactured through metal bridging, the product manufactured by the process can be thinner, and the visual effect is better, but because the process mainly adopts a lapping mode for an upper circuit and a lower circuit and does not have a barrier layer, the anti-interference performance is weak, the touch current is slightly strong, the interference can be formed between the upper circuit and the lower circuit, and the touch jumping point problem is caused, the manufacturing process is difficult, the yield is low, and the product quality is unstable; although the material cost of the product is reduced, the manufacturing cost is high. One designing such a product might want to circumvent this problem by means of the powerful immunity of the chip, but this places high demands on the chip. The designer neglects that the chip itself can also receive external environment's influence, and the chip is stable and really receives the influence of static also very big, and ground connection is not good, or when weather is dry, static is very strong, and is also very big to the interference of chip, so appear the problem of touching the jump point after using a period of time.
Disclosure of Invention
Aiming at the problems and the defects, the invention provides the OGS capacitive touch screen which avoids interference, solves the problem of jumping points, and can produce the OGS capacitive touch screen with narrower frame, thinner thickness, lighter weight and more stable performance and the manufacturing method thereof.
The technical scheme of the invention is realized as follows: a manufacturing method of an OGS capacitive touch screen comprises the following steps:
(1) Inspecting the supplied materials of the glass cover plate, cleaning, fixing the glass cover plate on a substrate carrier in a vacuum plating tank of magnetron sputtering equipment, and enabling the working surface of the glass cover plate to face a magnetron sputtering target material;
(2) Placing a line circuit pattern mould on the working surface of the glass cover plate;
(3) Sequentially sputtering a mixture of niobium, silicon and indium tin oxide on a target material on a glass cover plate through a magnetron sputtering device to form an upper line conductive pattern layer by using a three-layer film stacking structure, wherein the bottom layer of the three-layer film stacking structure is a niobium pentoxide layer, the middle layer of the three-layer film stacking structure is a silicon dioxide layer, and the upper layer of the three-layer film stacking structure is an indium tin oxide layer;
(4) Removing the upper line circuit pattern mould;
(5) Placing a copper or titanium or silver wire circuit mould on the same side of the glass cover plate on which the conductive layer of the magnetron sputtering wire circuit is placed;
(6) Carrying out magnetron sputtering on a copper or titanium or silver line circuit conducting layer on the glass cover plate (1);
(7) Removing the copper or titanium or silver line circuit die;
(8) Forming a silicon dioxide insulating barrier layer by magnetron sputtering silicon (Si) on the glass cover plate of the copper or titanium or silver on-line circuit conducting layer through magnetron sputtering;
(9) Placing a line pattern mould on the same side of the glass cover plate on which the silicon dioxide insulating barrier layer is formed by magnetron sputtering;
(10) Sequentially sputtering a mixture of niobium, silicon and indium tin oxide on a target material on a glass cover plate through a magnetron sputtering device to form a down-line circuit conductive pattern layer by using a three-layer film stacking structure, wherein the bottom layer of the three-layer film stacking structure is a niobium pentoxide layer, the middle layer of the three-layer film stacking structure is a silicon dioxide layer, and the upper layer of the three-layer film stacking structure is an indium tin oxide layer;
(11) Removing the off-line circuit pattern mould;
(12) Placing a copper or titanium or silver offline circuit mould on the same side of the glass cover plate of the conductive pattern layer of the magnetron sputtering offline circuit;
(13) Magnetron sputtering a copper or titanium or silver off-line circuit conducting layer;
(14) Removing the copper or titanium or silver off-line circuit mould;
(15) Etching copper or titanium or silver conductive circuits by laser, and etching and cutting the conductive layers plated on the whole surface into a plurality of very thin circuits by a laser etching machine according to the design requirements of a drawing so as to be conveniently bound with a flexible printed circuit;
(16) Completing etching of the conducting circuit to form leading-out line binding position of the binding flexible printed circuit board;
(17) The flexible printed circuit board is a link line for conducting the OGS capacitive touch screen with other main parts or the whole machine;
(18) And finishing the manufacture of the OGS capacitive touch screen.
Further, the thicknesses of the coating films of the upper line conductive pattern layer in the step (3) and the lower line conductive pattern layer in the step (10) are respectively niobium pentoxide: 4.8-6nm; silicon dioxide: 64nm-72nm; indium tin oxide: 20nm-26nm.
Further, the resistance value of the conductive layer of the line circuit in the step (3) is 80-120 Ω. And (3) in the step (6), the resistance value of the conductive layer control loop of the line circuit on the copper or titanium or silver is controlled to be 200-800 omega, and the environmental temperature is 150-260 ℃.
Further, the environmental temperature of the step (8) is 150-260 ℃.
Further, the resistance value of the conductive layer of the offline circuit in the step (10) is 80-120 omega through magnetron sputtering, and the ambient temperature is 150-260 ℃.
Further, in the step (13), the conducting layer of the copper or titanium or silver offline line is subjected to physical magnetron sputtering, the resistance of the loop is controlled to be 200-800 omega, and the temperature is controlled to be 150-260 ℃.
The power of the magnetron sputtering silicon dioxide in the step (8) is 10-20 kw, and O is adopted 2 The flow rate is 5-15sccm, or the flow rate of Ar is 60-150sccm.
Performing magnetron sputtering on the conductive layer of the line on the step (3) and performing magnetron sputtering on the conductive layer of the line off the step (10): 6 kw-8 kw with O 2 The flow rate is 5-18sccm, or the flow rate of Ar is 280-350 sccm.
The power of magnetron sputtering the copper or titanium or silver upper line circuit conducting layer in the step (6) and the copper or titanium or silver lower line circuit conducting layer in the step (13) is 8kw-10kw, and O is adopted 2 The flow rate is 10-25sccm, or the flow rate of Ar is 280-350 sccm.
Further, the thickness of the coating film layer is silicon dioxide: 64nm-72nm, indium tin oxide: 20nm-26nm, copper or titanium or silver: 28nm-30nm.
Further, the target material comprises niobium (Nb), silicon (Si), copper, titanium, silver and indium tin oxide mixture.
The OGS capacitive touch screen manufactured by the manufacturing method structurally comprises a glass cover plate, an upper line conductive layer copper or titanium or silver upper line conductive layer, a silica insulation blocking layer, a lower line conductive layer and a copper or titanium or silver lower line conductive layer; wherein, the line circuit conducting layer and copper or titanium or silver that reaches the standard grade line circuit conducting layer adopt magnetron sputtering on the glass apron through putting line circuit figure mould and copper or titanium or silver line circuit mould on the standard grade respectively on the line, silica insulation barrier layer passes through magnetron sputtering on the line circuit conducting layer of last grade line and copper or titanium or silver, the line circuit conducting layer and copper or titanium or silver line circuit conducting layer that falls off the standard grade line are through putting line circuit figure mould and copper or titanium or silver line circuit mould that falls off the standard grade line and copper or titanium or silver line circuit conducting layer's the outside is equipped with the flexible line printed circuit board and ties up the location on the line circuit conducting layer and copper or titanium or silver line circuit conducting layer that falls off the standard grade line.
Furthermore, the upper line conductive pattern layer (3) and the lower line conductive pattern layer (5) are both of a three-layer film stacking structure, the bottom layer of the three-layer film stacking structure is a niobium pentoxide layer, the middle layer of the three-layer film stacking structure is a silicon dioxide layer, and the upper layer of the three-layer film stacking structure is an indium tin oxide layer; the three layers of films are respectively niobium pentoxide: 4.8-6nm; silica: 64nm-72nm; indium tin oxide: 20nm-26nm.
Furthermore, the thickness of the silicon dioxide insulating barrier layer (4) is 64-72nm, and the silicon dioxide insulating barrier layer is of a film stack structure.
Further, the film thickness of the copper or titanium or silver upper line circuit conducting layer (2) and the film thickness of the copper or titanium or silver lower line circuit conducting layer (6) are 28-30nm, and the copper or titanium or silver upper line circuit conducting layer and the copper or titanium or silver lower line circuit conducting layer are both a film stacking structure.
The invention has the beneficial effects that:
(1) The novel process of the invention plates a single layer of silicon dioxide insulation barrier layer between the upper circuit and the lower circuit, thereby well blocking the problems of mutual interference and short circuit of the upper circuit and the lower circuit; even if the current is slightly larger, the problem of touch jumping of the product cannot be caused by using a chip with weak anti-interference performance.
(1) The appearance expression form of the product is more diversified, and the product is thinner. The thinnest of the OGS product of the new process can be 0.7mm (the size is 11.6-32 inches); because thin, so the mode of laminating is more nimble, and the product is just more diversified.
(2) The circuit has super strong adhesive force and higher stability. The new process of the invention adopts titanium palladium and the circuit plated on the titanium palladium, and the titanium palladium and the circuit plated on the titanium palladium are cut continuously by a knife, so the titanium palladium alloy has better quality and is more stable.
(3) The manufacturing process is simple and efficient, and has high capacity; the novel process realizes functions on one layer, and the traditional GG structure and the traditional GFF structure are both products consisting of two layers. Therefore, the new process of the invention simplifies a plurality of manufacturing processes, thereby greatly improving the productivity and having high production efficiency.
(4) The OGS product adopting the new process adopts a vacuum physical magnetron sputtering process, so that the equipment is more advanced, the precision is higher, the same number of circuit channels can be plated more finely and better, the line width and the line distance are more compact, and therefore, a lot of circuit space is saved. The VA area of the touch screen is narrower to the line routing of the outline edge, the visual area of the touch screen is larger, and the visual effect is better. The frame process can be narrowest by 25um, so that the visible area is enlarged and the visible area is larger. The narrow frame is realized, the visual effect of the product is more attractive, the thickness is thin and the weight is light; the traditional GG structure product and the GFF structure product are both products formed by combining two layers, and the novel process is a product formed by one layer. Thin thickness or light weight is obvious.
(5) The personnel investment is low, the carbon is low, the energy is saved, and the emission is reduced; the traditional process only needs 70 workers for realizing the capacity by 100 workers, and the labor cost is greatly saved. The process containing hydrofluoric acid, namely etching paste, is not needed, and is environment-friendly and energy-saving.
Drawings
FIG. 1 is a schematic flow chart of a manufacturing method of an OGS capacitive touch screen according to the present invention;
FIG. 2 is a schematic diagram of a method for manufacturing an OGS capacitive touch screen according to the present invention;
FIG. 3 is a schematic cross-sectional structural view of an OGS capacitive touch screen of the present invention;
FIG. 4 is a schematic diagram of a three-layer film stack structure of an upper line conductive layer and a lower line conductive layer of an OGS capacitive touch screen according to the present invention;
fig. 5 is a schematic diagram of the principle that steps (3), (6), (10) and (13) of the manufacturing method of the OGS capacitive touch screen adopt mold shielding magnetron sputtering.
Detailed Description
As shown in fig. 1-4, in the first embodiment of the present invention: a manufacturing method of an OGS capacitive touch screen comprises the following steps:
(1) Inspecting the supplied materials of the glass cover plate 1, cleaning, fixing the glass cover plate 1 on a substrate carrier in a plating tank of physical magnetron sputtering equipment, and enabling the working surface of the glass cover plate 1 to face a physical magnetron sputtering target material;
(2) Placing a line circuit pattern mould on the working surface of the glass cover plate 1;
(3) Sequentially sputtering a mixture of niobium, silicon and indium tin oxide on a target material on the glass cover plate 1 by a magnetron sputtering device to form an upper line conductive pattern layer 3 by using a three-layer film stacking structure, wherein the bottom layer of the three-layer film stacking structure is a niobium pentoxide layer, the middle layer of the three-layer film stacking structure is a silicon dioxide layer, the upper layer of the three-layer film stacking structure is an indium tin oxide layer, and the resistance value of the upper line conductive pattern layer 3 is 80-120 omega. The magnetron sputtering is as shown in fig. 5 (fig. 5 is only a schematic diagram, and in order to show the principle of magnetron sputtering, the line pattern mold on the indium tin oxide ITO is separated from the glass cover plate 1 by a little, and the mold is attached to the glass cover plate 1 in actual operation, and the mold is also attached to the glass cover plate 1 in the following steps (6), (10) and (13).
(4) Removing the upper line pattern mould;
(5) Placing a copper or titanium or silver line feeding circuit mould on the same side of the glass cover plate 1 of the conductive pattern layer 3 of the line feeding circuit subjected to magnetron sputtering;
(6) And magnetron sputtering a copper or titanium or silver line circuit conducting layer 2. Magnetron sputtering is shown in FIG. 4. The resistance value of a control loop of the wire line conducting layer 2 of the sputtered copper or titanium or silver is 200-800 omega, the environment temperature is 150-260 ℃, and the preferable environment temperature is as follows: 220 deg.C, 240 deg.C and 260 deg.C.
(7) Removing the copper or titanium or silver line circuit die;
(8) And forming a silicon dioxide insulating barrier layer 4 on the glass cover plate 1 of the copper or titanium or silver line circuit conducting layer 2 through magnetron sputtering by using a silicon target. Ambient temperature between 150 ℃ and 260 ℃, preferably ambient temperature: 220 deg.C, 240 deg.C and 260 deg.C.
(9) Placing a line circuit pattern mould on the same side of the glass cover plate 1 with the magnetron sputtering silicon dioxide insulating barrier layer 4;
(10) And sequentially carrying out magnetron sputtering on the target material niobium, silicon and indium tin oxide mixture on the glass cover plate 1 through magnetron sputtering equipment to form a down line conductive pattern layer 5 and form a down line conductive pattern, wherein the bottom layer of the three-layer film stack structure is a niobium pentoxide layer, the middle layer of the three-layer film stack structure is a silicon dioxide layer, and the upper layer of the three-layer film stack structure is an indium tin oxide layer. Magnetron sputtering is shown in FIG. 5. The resistance value of the conductive pattern layer 5 of the magnetron sputtering off-line circuit is 80-120 omega, the environmental temperature is 150-260 ℃, and the preferable environmental temperature is as follows: 220 deg.C, 240 deg.C and 260 deg.C.
(11) Removing the off-line circuit pattern mould;
(12) Placing a copper or titanium or silver offline circuit mould on the same side of the glass cover plate 1 of the magnetron sputtering offline circuit conductive pattern layer 5;
(13) And magnetron sputtering a copper or titanium or silver offline circuit conducting layer 6. Magnetron sputtering is shown in FIG. 4. The resistance value of the control loop is 200-800 omega, and the temperature is 150-260 ℃; in the present embodiment, the conductive layer 6 of the copper, titanium, or silver offline circuit is magnetron sputtered, and the loop resistances are controlled to be 200 Ω, 400 Ω, and 600 Ω, and the preferred temperatures are: 220 deg.C, 240 deg.C and 260 deg.C.
(14) And removing the copper or titanium or silver offline circuit die.
(15) Laser etching copper or titanium or silver conducting circuits; the laser etching is used for etching and cutting the whole electroplating conductive layer into a plurality of very thin circuits according to the design requirements of a drawing. The laser etching speed is 5-10 (cm/min), the power is 70-90W, the power is preferably 90W, and the operation is performed for 5 times.
(16) And completing the etching of the conducting circuit to form an outgoing line binding position 8 of the binding flexible printed circuit board 7.
(17) The flexible printed circuit board 7 is a link line for conducting the OGS capacitive touch screen with other main parts or the whole machine, the binding temperature is 170-190 ℃ and the binding time is 13-16 seconds.
(18) And finishing manufacturing the OGS capacitive touch screen.
In this embodiment, the thicknesses of the coating films of the upper line conductive pattern layer 3 in the step (3) and the lower line conductive pattern layer 5 in the step (10) are respectively niobium pentoxide: 4.8-6nm; silicon dioxide: 64nm-72nm; indium tin oxide: 20nm-26nm. For example, the niobium pentoxide may be: 4.8nm, 5 nm and 6nm; the silica may be: 64nm, 68 nm and 72nm; the indium tin oxide may be: 20nm, 22 nm, 24 nm and 26nm; the film coating speed is 2-5 m/min; the material of the target material: niobium, silicon, indium tin oxide mixtures. Magnetron sputtering of niobium/NB target materialPower: 10-20 kw, adopting O2 flow of 25-40sccm, adopting Ar flow of 250-400sccm, magnetron sputtering power of silicon/Si: 10-20 kw, adopting O2 flow of 5-15sccm, adopting Ar flow of 60-150sccm, and adopting ITO (indium tin oxide/In) as target material 2 O 3 ) The magnetron sputtering power of (1) is 6-8 Kw, O 2 : 5～18sccm , Ar : 280～ 350sccm。
When the magnetron sputtering target material silicon in the step (8) of the invention is adopted, the power is 10kw-20kw, and O is adopted 2 The flow rate is 5-15sccm, and the Ar flow rate is 60-150sccm.
The power of the conductive pattern layer 3 of the line on the step (3) and the conductive pattern layer 5 of the line off the step (10) in the magnetron sputtering process is as follows: the target material is niobium/NB magnetron sputtering power: 10-20 kw, adopting the O2 flow of 25-40sccm, adopting the Ar flow of 250-400sccm, and adopting the magnetron sputtering power of silicon/Si: 10-20 kw, adopting O2 flow of 5-15sccm and Ar flow of 60-150sccm, and adopting ITO (indium tin oxide/In) as the target material 2 O 3 ) The magnetron sputtering power of (1) is 6-8 Kw, O 2 5-18sccm, and 280-350 sccm of Ar; when niobium/Nb is adopted as the target in the step (3) and the step (10), NB is subjected to magnetron sputtering 2 O 5 The thickness of the coating film layer is as follows: 4.8nm-6nm; the thickness of the silicon dioxide insulating barrier layer film is 64-72nm; the thickness of the indium tin oxide coating film layer is as follows: 20nm-26nm.
When the copper or titanium or silver upper line circuit conducting layer 2 is subjected to magnetron sputtering in the step (6) and the copper or titanium or silver lower line circuit conducting layer 6 is subjected to magnetron sputtering in the step (13), the target material comprises copper, titanium and silver, the adopted power is 8kw-10kw, and the target material titanium adopts N 2 The flow is 10-25sccm, the target material is copper and titanium silver, and the Ar flow is 280-350 sccm; the thicknesses of the conductive layer 2 of the magnetron sputtering copper or titanium or silver upper line circuit and the conductive layer 6 of the magnetron sputtering copper or titanium or silver lower line circuit are as follows: 28-30nm. The coating speed is 2-5 m/min.
The working principle of the invention is as follows: according to the scheme of IC matched graphs provided by a customer, a corresponding mould is manufactured and placed on a processed product, physical magnetron sputtering equipment is started, electron impact gas is dissociated in vacuum, argon ions are attracted by a negative electrode and impact the surface of a solid, surface atoms obtain kinetic energy exchange in the impact process and jump out of the surface, and the surface atoms are deposited on a glass cover plate 1 by shielding of the mould to generate a circuit process so as to finish the OGS capacitive touch screen.
The invention can be adapted to the IC design graphics commonly used by the touch screen at present, such as top meeting (GT), top meeting (ILITE), elegance (EETI), wida (WD), SIS, berbei (BL), and the like, and comprises the future new IC design graphics. The product with narrower frame, better diversity of visual effect, thinner thickness, lighter weight and better and stable performance can be produced.
As shown in fig. 2-4, the OGS capacitive touch screen manufactured by the manufacturing method of the present invention structurally includes a glass cover plate 1, a copper or titanium or silver upper line conductive layer 2, an upper line conductive layer 3, a silica insulation barrier layer 4, a lower line conductive layer 5, and a copper or titanium or silver lower line conductive layer 6; line conductive pattern layer 3 and copper or titanium or the silver line circuit conducting layer 2 that reaches the standard grade adopt magnetron sputtering on glass apron 1 through putting the line circuit pattern mould that reaches the standard grade and copper or titanium or the silver line circuit mould that reaches the standard grade respectively, and silica insulating barrier layer 4 adopts magnetron sputtering on line conductive pattern layer 3 and copper or titanium or silver line circuit conducting layer 2 on the line circuit conductive pattern layer 3 and copper or titanium or silver through magnetron sputtering, line conductive pattern layer 5 and copper or titanium or the silver line circuit conducting layer 6 that rolls off the standard grade adopt magnetron sputtering on silica barrier layer 4 through putting line circuit pattern mould and copper or titanium or the silver line circuit mould that rolls off the standard grade and copper or titanium or silver line circuit conducting layer 2 and copper or titanium or the outside of silver line circuit conducting layer 6 that rolls off the standard grade are equipped with flexible line printed circuit board 7 and tie up location 8 on copper or titanium or silver.
According to the OGS capacitive touch screen manufactured by the manufacturing method, the upper line conductive layer 3 and the lower line conductive layer 5 are of three-layer film stacking structures, the bottom layer of the three-layer film stacking structure is a niobium pentoxide layer, the middle layer is a silicon dioxide layer, and the upper layer is an indium tin oxide layer; the three layers of films are respectively niobium pentoxide: 4.8-6nm; silicon dioxide: 64nm-72nm; indium tin oxide: 20nm-26nm. Such as niobium pentoxide: 4.8, 5 nm and 6nm; silicon dioxide: 64nm, 68 nm and 72nm; indium tin oxide: 20nm, 22 nm, 24 nm and 26nm.
In the OGS capacitive touch screen manufactured by the manufacturing method, the thickness of the film layer of the silicon dioxide insulating barrier layer 4 is 64-72nm, such as 64nm, 68 nm and 72nm, and the film layer is a film-material stacked structure.
In the OGS capacitive touch screen manufactured by the manufacturing method, the thicknesses of the film layers of the copper or titanium or silver upper line circuit conducting layer 2 and the copper or titanium or silver lower line circuit conducting layer 6 are 28-30nm, such as 28nm, 29 nm and 30nm, and the film layers are of a film-material stacked structure.
The above description is only an embodiment of the present invention and is not intended to limit the present invention. Various modifications and alterations to this invention will become apparent to those skilled in the art. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present invention should be included in the scope of the claims of the present invention.
Claims (10)
1. A manufacturing method of an OGS capacitive touch screen is characterized by comprising the following steps:
(1) Inspecting the supplied materials of the glass cover plate (1), cleaning, fixing the glass cover plate (1) on a substrate carrier in a vacuum plating tank of magnetron sputtering equipment, and enabling the working surface of the glass cover plate (1) to face a physical magnetron sputtering target material;
(2) Placing a line circuit pattern mould on the working surface of the glass cover plate (1);
(3) Sequentially carrying out magnetron sputtering on a target material niobium, silicon and indium tin oxide mixture on a glass cover plate (1) through magnetron sputtering equipment to form an upper line conductive pattern layer (3) and form an upper line conductive pattern, wherein the bottom layer of the three-layer film stack structure is a niobium pentoxide layer, the middle layer of the three-layer film stack structure is a silicon dioxide layer, and the upper layer of the three-layer film stack structure is an indium tin oxide layer;
(4) Removing the upper line circuit pattern mould;
(5) Placing a copper or titanium or silver line circuit mould on the same side of the glass cover plate (1) of the conductive layer (3) of the line circuit subjected to magnetron sputtering;
(6) Carrying out magnetron sputtering on a copper or titanium or silver line circuit conducting layer (2) on the glass cover plate (1);
(7) Removing the copper or titanium or silver line circuit die;
(8) Forming a silicon dioxide insulating barrier layer (4) by magnetron sputtering silicon on the glass cover plate (1) which is magnetron sputtered with the copper or titanium or silver line circuit conducting layer (2);
(9) Placing a line circuit pattern mould on the same side of the glass cover plate (1) with the magnetron sputtering silicon dioxide insulating barrier layer (4);
(10) Sequentially performing magnetron sputtering on a glass cover plate (1) by magnetron sputtering equipment on a target material mixture comprising niobium, silicon and indium tin oxide to form a down-line circuit conductive layer (5) and a down-line circuit conductive pattern, wherein the bottom layer of the three-layer film stack structure is a niobium pentoxide layer, the middle layer is a silicon dioxide layer, and the upper layer is an indium tin oxide layer;
(11) Removing the off-line circuit pattern mould;
(12) Placing a copper or titanium or silver offline circuit mould on the same side of the glass cover plate (1) of the conductive pattern layer (5) of the magnetron sputtering offline circuit;
(13) Magnetron sputtering a copper or titanium or silver off-line circuit conducting layer (6);
(14) Removing the copper or titanium or silver off-line circuit mould;
(15) Etching copper or titanium or silver conductive circuits by laser, and etching and cutting the conductive layers plated on the whole surface into a plurality of very thin circuits by a laser etching machine according to the design requirements of a drawing so as to be conveniently bound with a flexible printed circuit;
(16) Completing etching of the conducting circuit to form outgoing line binding positions (8) of the binding flexible printed circuit board (7);
(17) The flexible printed circuit board (7) is bound, and the flexible printed circuit board (7) is a link line for conducting the OGS capacitive touch screen with other main parts or the whole machine;
(18) And finishing the manufacture of the OGS capacitive touch screen.
2. The method of claim 1, wherein the OGS capacitive touch screen is manufactured by the method of claim 1The method comprises the following steps: the thicknesses of the coating films of the upper line conductive pattern layer (3) in the step (3) and the lower line conductive pattern layer (5) in the step (10) are respectively niobium pentoxide: 4.8-6nm; silicon dioxide: 64nm-72nm; indium tin oxide: 20nm-26nm; the target material comprises a mixture of niobium, silicon and indium tin oxide, and the target material niobium adopts the following power: 10-20 kw, using O 2 The flow rate is as follows: 25-40sccm with an Ar flow of: 250-400 sccm; the target material silicon adopts power: 10-20 kw, using O 2 The flow rate is as follows: 5-15sccm, with an Ar flow of: 60-150 sccm; indium tin oxide mixture, with power: 6-8 kw with O 2 The flow rate is as follows: 5-18sccm, and adopting Ar flow of 280-350 sccm;
the resistance value of the line circuit conductive layer (3) in the step (3) is 80-120 omega; the resistance value of a control loop of the conductive layer of the copper or titanium or silver line circuit subjected to magnetron sputtering in the step (6) is 200-800 omega, and the ambient temperature is 150-260 ℃;
the resistance value of the conductive pattern layer (5) of the off-line circuit in the step (10) is 80-120 omega, and the environment temperature is 150-260 ℃.
3. The method of claim 1, wherein the method comprises: the copper or titanium or silver upper line circuit conducting layer (2) is subjected to magnetron sputtering in the step (6) and the copper or titanium or silver lower line circuit conducting layer (6) is subjected to magnetron sputtering in the step (13), the target material comprises copper, titanium and silver, the adopted power is 8kw-10kw, and the titanium of the target material is N 2 The flow rate is 10-25sccm, and the Ar flow rate of the silver, copper and titanium target materials is 280-350 sccm; thickness of the coating film layer silver or copper or titanium: 28nm-30nm; the coating speed is 2-5 m/min.
4. The method of claim 1, wherein the method comprises: the environment temperature in the step (8) is 150-260 ℃, the power is 10-20 kw when the target material silicon is used for magnetron sputtering silicon dioxide, and O is used 2 The flow rate is 5-15sccm, and the flow rate of Ar is 60-150sccm.
5. The method of claim 1, wherein the OGS capacitive touch screen is manufactured by: and (3) magnetron sputtering the silver or copper or titanium off-line circuit conducting layer, wherein the resistance value of the control loop is 200-800 omega, and the temperature is 150-260 ℃.
6. The method of claim 1, wherein the OGS capacitive touch screen is manufactured by: and (3) magnetron sputtering the silver or copper or titanium upper line circuit conducting layer (2) in the step (6) and the silver or copper or titanium lower line circuit conducting layer (6) in the step (13) are both of a film-quality stacked structure.
7. The OGS capacitive touch screen manufactured by the manufacturing method of claim 1, wherein: the structure of the conductive layer comprises a glass cover plate (1), niobium pentoxide, silicon dioxide, an indium tin oxide upper line conductive layer (3), a copper or titanium or silver upper line conductive layer (2), a silicon dioxide insulating barrier layer (4), niobium pentoxide, silicon dioxide, an indium tin oxide lower line conductive layer (5) and a copper or titanium or silver lower line conductive layer (6); wherein, line circuit conductive pattern layer (3) and copper or titanium or silver on line circuit conducting layer (2) on niobium pentoxide, silicon dioxide, indium tin oxide are respectively through putting line circuit pattern mould and copper or titanium or silver on line circuit mould on niobium pentoxide, silicon dioxide, indium tin oxide and adopting magnetron sputtering on glass apron (1), silica dioxide insulating barrier layer (4) is through magnetron sputtering on line circuit conductive pattern layer (3) and copper or titanium or silver on line circuit conducting layer (2) on niobium pentoxide, silicon dioxide, indium tin oxide, niobium pentoxide, silicon dioxide, indium tin oxide off line circuit conductive pattern layer (5) and copper or titanium or silver off line circuit conducting layer (6) are respectively through putting niobium pentoxide, silicon dioxide, indium tin oxide off line circuit pattern mould and copper or titanium or silver off line circuit mould and adopting magnetron sputtering on silica dioxide barrier layer (4), the outside of line circuit conducting layer (2) and copper or titanium or silver off line circuit conducting layer (6) on copper or titanium or silver is equipped with flexible line printed circuit board (7) binding position (8).
8. The OGS capacitive touch screen of claim 7, wherein: the upper line conductive pattern layer (3) and the lower line conductive pattern layer (5) are of three-layer film stacking structure, the bottom layer of the three-layer film stacking structure is a niobium pentoxide layer, the middle layer of the three-layer film stacking structure is a silicon dioxide layer, and the upper layer of the three-layer film stacking structure is an indium tin oxide layer; the three layers of films are respectively niobium pentoxide: 4.8-6nm; silicon dioxide: 64nm-72nm; indium tin oxide: 20nm-26nm.
9. The OGS capacitive touch screen of claim 7, wherein: the thickness of the film layer of the silicon dioxide insulating barrier layer (4) is 64-72nm, and the silicon dioxide insulating barrier layer is of a film stack structure.
10. The OGS capacitive touch screen of claim 7, wherein: the thickness of the film layers of the copper or titanium or silver upper line circuit conducting layer (2) and the copper or titanium or silver lower line circuit conducting layer (6) is 28-30nm, and the two layers are of a film-material stacked structure.
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Effective date of registration: 20230601 Address after: Building 19, Zhongpei Electronic Information Industry Park, No. 201 Jinfeng Road, High tech Industrial Development Zone, Laibin City, Guangxi Zhuang Autonomous Region, 546100 Patentee after: Guangxi Yituo Optoelectronic Technology Co.,Ltd. Address before: Building 12, Zigong Comprehensive Bonded Zone, No. 80, Longxiang Avenue, Yantan District, Zigong, Sichuan 643000 Patentee before: Sichuan Lirenyuan Innovation Technology Co.,Ltd. |