CN115172165A - 一种逆导型mos栅控晶闸管的制造方法 - Google Patents
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Abstract
本发明属于功率半导体技术领域，具体的说是涉及一种逆导型MOS栅控晶闸管的制造方法。本发明中的一种逆导型MOS栅控晶闸管的制造方法，在进行结终端场限环注入的同时，在元胞区注入形成P+区，等效增加了器件反向导通时PN结的P区浓度，减小了器件反向的反向导通压降。本发明的一种逆导型MOS栅控晶闸管的制造方法，能够与现有MOS栅控晶闸管工艺相兼容。本发明的有益效果为：在牺牲器件部分正向导通能力的基础上，大幅提升了器件的反向导通能力。
Description
技术领域
本发明属于功率半导体技术领域，具体的说是涉及一种逆导型MOS栅控晶闸管的制造方法。
背景技术
随着人类社会的不断发展，能源的消耗量也不断增加，增加产出的同时，对于电能的利用率有着越来越高的要求。这些要求的实现，有赖于电力电子器件的发展。MOS栅控晶闸管作为一种新型功率器件，也得到了大家的关注。
MOS栅控晶闸管(MOS Controlled Thyristor，简称MCT)是一种兼具功率MOS和晶闸管优点的半导体器件，它具有电压控制驱动、无电流饱和特性和功率密度高的优点，非常适合应用在高功率领域。典型的MCT器件不具备逆向导通能力，而实际电路中如想正常工作，往往需要并连一个反向二极管，以便实现反向续流能力。以脉冲放电电路为例，若不具备反向导通能力，则不能实现连续脉冲过程，其反向将产生电压停滞，能量难以得到顺畅释放，则易发生器件损坏。
为解决此问题，人们提出了RC-MCT(Reverse Conducting MCT)。相比于传统的MCT而言，RC-MCT可以使用在脉冲功率电路中，不需要并联续流二极管，器件内部存在反向电流泄放通道，这样的优点是在不增加晶胞宽度的基础上，实现反向逆导功能，减小脉冲电路复杂度，便于电路集成，降低成本。传统RC-MCT在反向导通过程中，由于p-well区的浓度不够高，导致反向的导通压降较高，不利于RC-MCT的应用。
发明内容
本发明的目的是提供一种逆导型MOS栅控晶闸管的制造方法，解决传统RC-MCT反向导通电压较高的问题。
本发明的技术方案：一种逆导型MOS栅控晶闸管的制造方法，包括以下步骤：
第一步：选取N型硅片作为衬底硅片，即结构中的N-漂移区8，首先在N-漂移区8背面一端通过离子注入N型杂质并推结形成N型FS层9；如图5所示；
第二步：在N-漂移区8上表面一端通过光刻离子注入P型杂质并推结形成P+区4和终端P型场限环；元胞如图6所示；
第三步：在N-漂移区8上表面一端通过热氧化形成栅氧化层3，并在栅氧化层3上淀积一层多晶硅/金属，再刻蚀形成栅电极1；如图7所示；
第四步：利用离子注入和高温推结工艺，在N-漂移区8上层注入P型杂质并推结形成P阱区7，P阱区7一端的上表面与栅氧化层3底部接触；如图8所示；
第五步：利用离子注入和高温推结工艺，在P阱区7上层注入N型杂质形成N阱区6，N阱区6一端的上表面与栅氧化层3底部接触；如图9所示；
第六步：利用离子注入和高温推结工艺，在N阱区6上层注入P型杂质形成P型深阱区5，P型深阱区5一端的上表面与栅氧化层3底部接触；如图10所示；
第七步：在器件上表面淀积BPSG绝缘介质层，刻蚀欧姆接触孔；
第八步：在N-漂移区8上表面另一端淀积金属，形成阴极金属2；阴极金属2的底部与P+区4、N阱区6、P型深阱区5另一端的上表面接触；如图11所示；
第九步：在器件表面淀积钝化层；
第十步：向背面N型FS层9下层通过光刻离子注入P型杂质并进行离子激活，形成P型阳极区10；
第十一步：向背面N型FS层9下层一端通过光刻离子注入N型杂质并进行离子激活，形成N型阳极区11；如图12所示；
第十二步：在器件下表面进行金属淀积形成阳极12；如图12所示；
本发明的有益效果为，本发明所提出的逆导MOS栅控晶闸管的制造方法，通过提高反向PN结P区的浓度，降低RC-MCT的反向导通压降。
附图说明
图1是常规平面栅型RC-MCT元胞结构示意图；
图2是本发明的平面栅型RC-MCT元胞结构示意图；
图3是常规的槽栅型RC-MCT元胞结构示意图；
图4是本发明的槽栅型RC-MCT元胞结构示意图；
图5是本发明的制造工艺流程中形成N型FS层8后的结构示意图；
图6是本发明的制造工艺流程中通过离子注入P型杂质推结形成P+区的结构示意图；
图7是本发明的制造工艺流程中形成栅氧后，在栅氧层上淀积一层多晶硅/金属再刻蚀形成栅电极的结构示意图；
图8是本发明的制造工艺流程中通过离子注入P型杂质推结形成P阱区的结构示意图；
图9是本发明的制造工艺流程中通过离子注入N型杂质推结形成N阱区的结构示意图；
图10是本发明的制造工艺流程中通过离子注入P型杂质推结形成P深阱区的结构示意图；
图11是本发明的制造工艺流程中正面金属化后的结构示意图；
图12是本发明的制造工艺流程中向背面注入P型杂质并进行离子激活，形成P型阳极区，再向背面注入N型杂质并进行离子激活，形成N型阳极区后的结构示意图；
图13是本发明的制造工艺流程中背面金属化的结构示意图；
图14为本发明制造工艺的RC-MCT与常规RC-MCT器件反向导通特性曲线对比示意图；
图15为本发明制造工艺的RC-MCT与常规RC-MCT器件正向导通特性曲线对比示意图；
具体实施方式
下面结合附图，详细描述本发明的技术方案：
本发明提供一种逆导型MOS栅控晶闸管的制造方法，结构示意图如图2，包括栅电极1、金属化阴极2、栅氧化层3、P+区4、P深阱5、N阱6、P阱7、N漂移区8、FS层9、P阳极区10、N阳极区11、金属化阳极12。P阱7位于漂移区8顶部，N阱6位于P阱7中，P深阱5位于N阱5中，P+区4位于漂移区8顶部靠近金属化阴极2一侧，栅氧化层3位于P深阱5、N阱6、P阱7、N漂移区8的表面，栅电极1位于栅氧化层3表面，金属化阴极2覆盖P深阱5和N阱6以及P+区4。N漂移区8的下表面设置有FS层9，FS层9下表面是P型阳极区10和N型阳极区11，金属化阳极12上部与N阳极区11和P型阳极区10接触。
本发明提出的一种逆导型MOS栅控晶闸管的制造方法，其栅极结构可设置为平面型栅或沟槽型栅，具有平面型栅的逆导型MOS栅控晶闸管元胞结构如图2所示，具有沟槽型栅的逆导型MOS栅控晶闸管元胞结构如图4所示。
由上可见，本发明逆导型MOS栅控晶闸管的制造方法的优点：在进行结终端场限环注入的同时，在元胞区注入形成P+区，与常规工艺流程相兼容，没有增加多余的工艺步骤，也对后续工艺没有影响。
本发明与常规的RC-MCT相比，通过增加P+区，等效增大了RC-MCT反向导通时的PN结P区的浓度，大大降低了RC-MCT的反向导通压降。
图14表示的是本制造方法的RC-MCT与常规RC-MCT器件反向导通特性曲线对比示意图。从图中可以看到，相较于常规结构，本制造方法制造的RC-MCT在电流密度为40000A/cm2时的反向导通电压降低了7.2V，下降了31％，此结果充分说明了本制造方法显著提升了器件的反向导通能力。
图15表示的是本制造方法的RC-MCT与常规RC-MCT器件正向导通特性曲线对比示意图。从图中可以看到，相较于常规结构，本制造方法制造的RC-MCT在电流密度为40000A/cm2时的正向导通电压只降低了1V，说明本发明的制造方法，在提高器件反向导通能力的同时，牺牲了一定的正向导通能力，但从总体来看，器件的性能还是有了较大的提升。
Claims (1)
1.一种逆导型MOS栅控晶闸管的制造方法，其特征在于，包括以下步骤：
第一步：选取N型硅片作为衬底硅片，即制备N-漂移区(8)，在N-漂移区(8)背面通过离子注入N型杂质并推结形成N型FS层(9)；
第二步：在N-漂移区(8)上层一端通过光刻离子注入P型杂质并推结形成P+区(4)和终端P型场限环；
第三步：在N-漂移区(8)上层另一端通过热氧化形成栅氧化层(3)，并在栅氧化层(3)上淀积一层多晶硅/金属，通过刻蚀形成栅电极(1)；
第四步：利用离子注入和高温推结工艺，在N-漂移区(8)上层注入P型杂质并推结形成P阱区(7)，P阱区(7)一端的上表面与栅氧化层(3)底部接触，另一端与P+区(4)接触；
第五步：利用离子注入和高温推结工艺，在P阱区(7)上层注入N型杂质形成N阱区(6)，N阱区(6)一端的上表面与栅氧化层(3)底部接触，另一端与P+区(4)接触；
第六步：利用离子注入和高温推结工艺，在N阱区(6)上层注入P型杂质形成P型深阱区(5)，P型深阱区(5)一端的上表面与栅氧化层(3)底部接触；
第七步：在器件上表面淀积BPSG绝缘介质层，刻蚀欧姆接触孔；
第八步：在N-漂移区(8)上表面另一端淀积金属，形成阴极金属(2)；阴极金属(2)的底部与P+区(4)、N阱区(6)、P型深阱区(5)另一端的上表面接触；
第九步：在器件表面淀积钝化层；
第十步：向背面N型FS层(9)下层一端通过光刻离子注入P型杂质并进行离子激活，形成P型阳极区(10)；
第十一步：向背面N型FS层(9)下层另一端通过光刻离子注入N型杂质并进行离子激活，形成N型阳极区(11)，N型阳极区(11)和P型阳极区(10)为并列设置并相互接触；
第十二步：在器件下表面进行金属淀积形成阳极(12)。
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