CN115151972A - 一种存储器和电子设备 - Google Patents

一种存储器和电子设备 Download PDF

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Publication number
CN115151972A
CN115151972A CN202080096121.4A CN202080096121A CN115151972A CN 115151972 A CN115151972 A CN 115151972A CN 202080096121 A CN202080096121 A CN 202080096121A CN 115151972 A CN115151972 A CN 115151972A
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CN
China
Prior art keywords
memory
chip
differential amplifier
word line
differential
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202080096121.4A
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English (en)
Chinese (zh)
Inventor
焦慧芳
赫然
范鲁明
刘燕翔
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Huawei Technologies Co Ltd
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Huawei Technologies Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Huawei Technologies Co Ltd filed Critical Huawei Technologies Co Ltd
Publication of CN115151972A publication Critical patent/CN115151972A/zh
Pending legal-status Critical Current

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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Memories (AREA)
  • Dram (AREA)
CN202080096121.4A 2020-02-28 2020-02-28 一种存储器和电子设备 Pending CN115151972A (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/CN2020/077293 WO2021168839A1 (fr) 2020-02-28 2020-02-28 Mémoire et dispositif électronique

Publications (1)

Publication Number Publication Date
CN115151972A true CN115151972A (zh) 2022-10-04

Family

ID=77490617

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202080096121.4A Pending CN115151972A (zh) 2020-02-28 2020-02-28 一种存储器和电子设备

Country Status (2)

Country Link
CN (1) CN115151972A (fr)
WO (1) WO2021168839A1 (fr)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN116367540B (zh) * 2023-05-10 2023-10-24 长鑫存储技术有限公司 半导体结构及其形成方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2363231B (en) * 1999-09-24 2002-05-08 Clearspeed Technology Ltd Memory devices
JP4662740B2 (ja) * 2004-06-28 2011-03-30 日本電気株式会社 積層型半導体メモリ装置
CN100541664C (zh) * 2007-01-25 2009-09-16 林殷茵 一种电阻随机存储器及其存储操作方法
CN101236780B (zh) * 2008-02-26 2012-07-04 中国科学院上海微系统与信息技术研究所 三维立体结构相变存储器芯片的电路及实现方法
TW201207852A (en) * 2010-04-05 2012-02-16 Mosaid Technologies Inc Semiconductor memory device having a three-dimensional structure
CN106910746B (zh) * 2017-03-08 2018-06-19 长江存储科技有限责任公司 一种3d nand存储器件及其制造方法、封装方法
US10957382B2 (en) * 2018-08-09 2021-03-23 Micron Technology, Inc. Integrated assemblies comprising vertically-stacked memory array decks and folded digit line connections

Also Published As

Publication number Publication date
WO2021168839A1 (fr) 2021-09-02

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