CN115088060A - Wafer edge defect inspection device and inspection method - Google Patents
Wafer edge defect inspection device and inspection method Download PDFInfo
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- CN115088060A CN115088060A CN202080096090.2A CN202080096090A CN115088060A CN 115088060 A CN115088060 A CN 115088060A CN 202080096090 A CN202080096090 A CN 202080096090A CN 115088060 A CN115088060 A CN 115088060A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/30—Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/8806—Specially adapted optical and illumination features
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/9501—Semiconductor wafers
- G01N21/9503—Wafer edge inspection
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
Abstract
The present invention relates to a wafer edge defect inspection apparatus and an inspection method capable of accurately inspecting an edge defect of a wafer, and specifically includes: the wafer detecting apparatus includes a wafer having a plate shape, a holding portion for holding the wafer, and an edge detecting portion for detecting a defect at an edge of the wafer.
Description
Technical Field
The present invention relates to a wafer edge defect inspection apparatus and an inspection method capable of accurately inspecting an edge defect of a wafer.
Background
Patent document 001 provides an inspection apparatus for wafer defects, the apparatus including: a front illumination band extending in an up-down direction with a specific point of the edge of the wafer as a center and having a spherical band shape; a plurality of front fixing members formed along a spherical belt surface of the front illumination belt; illuminating lamps fixed to the front fixing parts; and an optical camera disposed toward a specific location of the wafer edge, and further comprising: more than one side lighting belt, which takes the specific position of the wafer edge as the center, extends upwards and downwards and has a spherical belt shape; a plurality of side fixing parts formed along a spherical strip surface of the side illumination strip; illuminating lamps fixed to the side fixing parts; and an optical camera disposed toward a specific location of the edge of the wafer.
Patent document 002 provides a technique including: a stage supporting the wafer and reciprocally movable in a first horizontal direction; a bright field illuminator disposed above the stage, extending in a second horizontal direction perpendicular to the first horizontal direction, and irradiating a strip-shaped bright field illumination light longer than a diameter of the wafer to the wafer when the stage advances in the first horizontal direction; a dark field illuminator disposed above the stage, extending in the second horizontal direction, and illuminating a bar-shaped dark field illumination light longer than a diameter of the wafer to the wafer when the stage retreats in the first horizontal direction; and a camera disposed above the stage, acquiring a bright field image of the wafer when the stage advances in the first horizontal direction, and acquiring a dark field image of the wafer when the stage retreats in the first direction.
Patent document 003 provides a defect inspection apparatus for a silicon wafer, the apparatus comprising: infrared light illumination disposed opposite to the surface of the silicon wafer; a shooting unit provided with a line sensor array having sensitivity to infrared light illuminated by the infrared light; an image processing unit for detecting defects on the surface or inside of the silicon wafer from the image of the imaging unit, wherein the resistivity of the silicon wafer is acquired in advance, the infrared light is illuminated to adjust the illuminance according to the acquired resistivity of the silicon wafer, and the imaging unit adjusts the sensitivity to infrared light according to the acquired resistivity of the silicon wafer, and the defect inspection apparatus for a silicon wafer comprises: infrared light illumination disposed opposite to the surface of the silicon wafer; a shooting unit provided with a line sensor array having sensitivity to infrared light illuminated by the infrared light; a light transmission amount measuring unit for measuring a value of a light transmission amount of the infrared light transmitted through the silicon wafer in advance; and an image processing unit for detecting defects on the surface or inside of the silicon wafer from the image of the imaging unit, wherein the resistivity of the silicon wafer is acquired in advance, the infrared light is illuminated to adjust the illuminance according to the acquired resistivity of the silicon wafer, and the imaging unit adjusts the sensitivity to infrared light according to the measured value of the amount of transmission of infrared light through the silicon wafer.
Patent document 004 provides a technique including: a difference image generation step of generating a difference image by subtracting a difference value obtained by subtracting each pixel value corresponding to each coordinate of the normal image from each pixel value corresponding to each coordinate of an inspection target image acquired from the semiconductor wafer; an edge image generation step of performing a re-operation for distinguishing a unit region from a cross edge region, a horizontal edge region, and a vertical edge region in a normal image; obtaining unit area coordinate values corresponding to the unit areas, cross edge area coordinate values corresponding to the cross edge areas, horizontal edge area coordinate values corresponding to the horizontal edge areas and vertical edge area coordinate values corresponding to the vertical edge areas in the edge images; calculating each pixel value of the difference image corresponding to the coordinate value of the unit area in the difference image to determine a unit critical value (Ta); calculating each pixel value of the difference image of the coordinate value corresponding to the crossing edge region in the difference image to determine a crossing edge critical value (Tc); calculating each pixel value of the difference image of the coordinate values corresponding to the horizontal edge region in the difference image to determine a horizontal edge critical value (Th); and a step of calculating each pixel value of the difference image of the coordinate values corresponding to the vertical edge region in the difference image to determine a vertical edge critical value (Tv), wherein the cell critical value (Ta), the cross edge critical value (Tc), the horizontal edge critical value (Th), and the vertical edge critical value (Tv) are calculated, and then the defect is calculated by using the respective critical values.
(patent document 1) KR 10-2010-0053038A (20/05/2010)
(patent document 2) KR 10-2016-0068228A (2016, 06, 15/2016)
(patent document 3) KR 10-2010-0023861A (03/04/2010)
(patent document 4) KR 10-2013-0049359A (2013, 05, 14)
Disclosure of Invention
Technical subject
The present invention relates to a wafer edge defect inspection apparatus and an inspection method capable of accurately inspecting an edge defect of a wafer.
Means for solving the problems
The present invention is to solve the problems of the prior art, and the present invention includes: a wafer 100 in the shape of a plate; a wafer holding section 200 for holding the wafer 100; and an edge detection unit 300 for detecting a defect in the wafer corner 110.
In the invention comprising the wafer 100, the wafer chuck 200, and the edge detector 300 as described above, the wafer chuck 200 further comprises: a plurality of contact bodies 210 are formed to contact the surface and/or corner of the wafer 100.
In the invention comprising the wafer 100, the wafer chuck 200, and the edge detector 300 as described above, the edge detector 300 further comprises: a light source 310 that emits light of a certain illuminance to the corner; and a camera 320 that photographs the wafer corner 110.
The present invention relates to a wafer edge defect inspection apparatus and an inspection method, wherein the invention composed of the wafer 100, the wafer holding part 200 and the edge detection part 300 further comprises: and a control unit 410 for receiving the image information input from the camera 320 and determining whether the wafer corner 110 is defective.
The present invention relates to a wafer edge defect inspection apparatus and an inspection method, wherein the apparatus comprises a wafer 100, a wafer clamping part 200 and an edge detection part 300, and further comprises: a case 510 forming an inner space, accommodating the wafer chucking part 200 and the edge detecting part 300; a wafer 100 cassette 520 coupled to the outside of the case 510 and accommodating a plurality of wafers 100; and a transfer robot 530 transferring the wafer 100 to the wafer 100 cassette and the wafer chuck 200.
The invention is used for solving the problems of the prior invention and provides a method for inspecting the edge and corner defects of a wafer, which comprises the following steps: a transfer step S100 of transferring the wafer 100 to the wafer chuck 200; a holding step S200 of holding the edge of the wafer 100 after the transfer step S100; and a detection step S300 of detecting the wafer edge angle 110 after the holding step S200.
Effects of the invention
The invention can accurately detect the defect of the edge angle of the wafer formed by silicon
The invention can detect the defects and patterns of the wafer edges and corners.
The present invention can inspect the entire wafer edge by rotating the wafer.
The invention can rotate smoothly along with the vertical rotation of the contact body for clamping the wafer, and the contact body can not be clamped on the camera.
The invention emits light to the wafer and can reflect the light and keep a specific angle without entering the camera.
The present invention forms a plurality of cameras, so that the vertical surface and the inclined surface of the edge angle of the wafer can be respectively checked.
Drawings
FIG. 1 is a perspective view of a wafer corner defect inspection apparatus of the present invention;
FIG. 2 is a side view of the wafer corner defect inspection apparatus shown in FIG. 1;
FIGS. 3 to 4 are perspective views of the wafer-holding portion of the present invention;
FIG. 5 is a plan view of the wafer chuck shown in FIG. 4;
fig. 6 is a side view showing a state where a wafer is held on the wafer holding part of the present invention;
fig. 7 to 8 are side views showing an edge detection portion of the present invention;
fig. 9 is a flowchart showing a wafer edge defect inspection method of the present invention.
Detailed Description
Hereinafter, the most preferred embodiments of the present invention will be described in detail so that those skilled in the art to which the present invention pertains can easily practice the present invention.
The numbers referred to in the following embodiments are not limited to the reference objects and can be applied to all embodiments. Objects having the same purpose and exerting the same effect as the structures proposed in the embodiments are equivalent to equivalent alternative objects. The higher-level concept proposed in the embodiments includes objects of lower-level concepts that are not described.
(embodiment 1-1) the wafer edge defect inspection apparatus of the present invention comprises: a wafer 100 in the shape of a plate; a wafer holding section 200 for holding the wafer 100; and an edge detection unit 300 for detecting a defect in the wafer corner 110.
(example 1-2) according to the wafer edge defect inspection apparatus of the present invention of example 1-1, the wafer 100 is formed of silicon.
(embodiment 1-3) according to the wafer edge defect inspection apparatus of the present invention of embodiment 1-1, the flat surface 111 of the wafer 100 is formed of any one shape selected from a circle, an ellipse, and a polygon.
(embodiment 1-4) the wafer edge defect inspection apparatus of the present invention according to embodiment 1-1, the wafer 100 comprising: a vertical plane 113 perpendicular to the plane 111; a first boundary surface 114 located between the vertical surface 113 and the plane 111; a back surface 112 located on a corresponding surface of the plane 111; and a second boundary surface 115 located between the back surface 112 and the vertical surface 113.
(examples 1-5) according to the wafer edge defect inspection apparatus of the present invention of examples 1-4, the first boundary surface 114 and/or the second boundary surface 115 are formed to be rounded or chamfered.
The present invention relates to a wafer edge defect inspection apparatus, and more particularly, to an inspection apparatus for inspecting an edge defect of a wafer 100 made of silicon. The inspection apparatus of the present invention inspects the edge angle of the wafer 100 formed by the flat surface 111 having various shapes such as a circle, an ellipse, or a polygon, and the edge angle of the wafer 100 is formed by mixing a diagonal line and a vertical surface 113. Such a wafer 100 is formed by cutting an ingot of silicon material, and many defects generated in the process of manufacturing the wafer 100 are generated at corners other than the flat surface 111. For this, the inspection apparatus holds and rotates the wafer 100, thereby detecting a defect of a corner. The edge of the wafer 100 inspected in the inspection apparatus is formed with a vertical plane 113 perpendicular to the plane 111 and the back surface 112, and a first boundary surface 114 and a second boundary surface 115 are formed between the vertical plane 113 and the plane 111 and the back surface 112. The first boundary surface 114 is located between the vertical surface 113 and the plane 111 and is formed as a radius or a chamfer, and the second boundary surface 115 is located between the vertical surface 113 and the bottom surface and is formed as a radius or a chamfer in the same manner as the first boundary surface 114. The wafer 100 is fixed to the wafer chuck 200 of the inspection apparatus and rotated, and the rotated wafer 100 is inspected by the edge inspection unit 300 for breakage by inspecting the vertical surface 113, the first boundary surface 114, and the second boundary surface 115, respectively.
Therefore, the wafer edge defect inspection apparatus inspects edge defects generated during the manufacturing process of the wafer 100, and has a feature of inspecting edges by fixing and rotating the wafer 100.
(embodiment 1-6) according to the wafer edge defect inspection apparatus of the present invention of embodiment 1-1, the wafer chucking part 200 is formed in one or more.
(embodiment 1-7) according to the wafer edge defect inspection apparatus of the present invention of embodiment 1-1, the edge detecting part 300 is formed in one or more.
The present invention relates to an apparatus for inspecting edge defects of a wafer, and more particularly, to an apparatus for inspecting edge defects of a wafer, wherein a wafer holding portion 200 is used to hold a wafer 100 formed in various shapes, and an edge inspection portion 300 is used to inspect edge defects of the wafer 100 held in the wafer holding portion 200. Such a wafer holding part 200 and an edge detecting part 300 are formed in one or more, and fix and inspect the wafer 100. The wafer holders 200 are formed at the lower end of the wafer 100 in one or more, and fix the wafer 100, and the wafer 100 is seated and fixed to each wafer holder 200. And the edge detecting part 300 is formed at the side surfaces of the wafer 100 and the wafer chucking part 200 to inspect the edge defect and the manufacturing state of the wafer 100.
Therefore, by forming one or more wafer holding parts 200 and edge detecting parts 300, the wafer 100 can be effectively fixed and inspected.
(embodiment 2-1) the present invention relates to a wafer edge defect inspection apparatus, according to embodiment 1-1, the wafer chuck 200 includes: a plurality of contact bodies 210 are formed to contact the surface and/or corner of the wafer 100.
(embodiment 2-2) the wafer edge defect inspection apparatus of the present invention according to embodiment 2-1, comprising: a bracket fastening body 220a rotated by a driving motor 240 and simultaneously rotating a plurality of the contact bodies 210; and a bracket actuator 230a that individually selects and rotates the contact body 210 on the bracket fastening body 220.
(embodiment 2-3) according to the wafer edge defect inspection apparatus of the present invention of embodiment 2-2, the holder actuator 230 includes: and a cradle operation cam 250a that is in contact with the contact body 210 and is operated by interference of the edge detection part 300.
The present invention relates to a wafer holder 200, and particularly, the wafer holder 200 is used to fix and rotate a wafer 100. The wafer chuck 200 is used for fixing the silicon wafer 100, and has a contact body 210 that contacts the rear surface 112 and the corner of the wafer 100. At this time, the contact body 210 is formed in plurality and contacts the corner of the wafer 100, rotates the wafer 100, and inspects the defect of the wafer corner 110. Further, the contact body 210 is provided on the bracket fastening body 220a, and the bracket fastening body 220a is rotated by the driving motor 240. A mounting table on which the wafer 100 is mounted is formed on the upper portion of the holder fastening body 220a, and a plurality of through holes are formed on the mounting table so that one end portions of the plurality of contact bodies 210 protrude and fix the edge of the wafer 100. Both side surfaces of the mounting table are formed in shapes corresponding to each other, and a partition plate is formed between a plurality of through holes formed in the mounting table. And a seating plate is formed at the center of the seating table to seat the wafer 100, and a bracket fastening body 220a is formed at the lower portion of the seating plate. Further, the bracket fastening body 220a is formed with a bracket actuator 230a for individually rotating the plurality of fastening bodies. The bracket actuator 230a is formed in plurality on a side surface of the bracket fastening body 220a, and rotates together with the contact body 210 through the bracket fastening body 220 a. Such a carriage actuator 230a rotates the contact body 210 up and down when rotating, to prevent the contact body 210 from being caught on the spacing plate of the installation table. In addition, the cradle actuator 230a is in contact with the contact body 210, and the cradle operating cam 250a is formed by interference of the edge detecting part 300 and the spacing plate, and the cradle actuating cam 250a is not in contact with the contact body 210 when operated. When the contact body 210 rotates, if the cradle operation cam 250a determines that interference may occur at the edge detection part 300, the contact body 210 is rotated up and down.
Accordingly, the wafer chuck 200 of the present invention has a feature that the wafer 100 can be fixed and rotated by forming the plurality of contacts 210.
(embodiment 2-4) the wafer edge defect inspection apparatus of the present invention according to embodiment 2-1, comprising: a bracket fastening body 220b that positions the plurality of contact bodies 210; and a cradle actuator 230b that operates the contact body 210.
(embodiment 2-5) according to the wafer edge defect inspection apparatus of the present invention of embodiment 2-4, the holder actuator 230b includes: and a holder operating cam 250b operated by detecting the movement of the edge detecting part 300.
The present invention relates to a wafer chuck 200, and more particularly, the wafer chuck 200 is formed with a supporter actuator 230b for rotating a contact body 210, which fixes a wafer 100, up and down. The wafer chuck 200 is formed with a holder fastening body 220b for fixing the wafer 100 by a plurality of contact bodies 210, and the contact bodies 210 are rotated up and down by a holder actuator 230 b. The contact bodies 210 fix the corners of the wafer 100, and the edge detection unit 300 for inspecting the corner defects of the wafer 100 is formed on the side surface of the contact body 210. As another embodiment of the present invention, the edge detecting part 300 rotates around the holder fastening body 220b to inspect the wafer corner 110 for defects. At this time, when the edge detection unit 300 rotates, the contact body 210 moves up and down by the carriage actuator 230b without being caught. Further, the carriage operation cam 250b detects the movement of the edge detection part 300 and moves the contact body 210, and the contact body 210 moves when the edge detection part 300 rotates.
Therefore, the wafer chuck 200 has a feature of operating the contact body 210 while the edge detecting part 300 rotates.
(embodiment 2-6) according to the wafer corner defect inspection apparatus of the present invention of embodiment 2-1, the contact 210 is formed of an insulating material.
(example 2-7) according to the wafer corner defect inspection apparatus of the present invention of example 2-1, the contact body 210 is formed of a polymer.
(embodiment 2-8) according to the wafer corner defect inspection apparatus of the present invention of embodiment 2-1, one surface of the contact 210 is formed in a straight line or a curved line.
(embodiments 2 to 9) the wafer edge defect inspection apparatus of the present invention according to embodiments 2 to 8, comprising: an elastic member 211 generating a uniform contact force at the contact body 210.
(example 2-10) the wafer edge defect inspection apparatus of the present invention according to example 2-1, wherein the elastic member is formed of a spring.
(embodiment 2-11) the wafer edge defect inspection apparatus of the present invention according to embodiment 2-1, comprising: and a contact pressure measuring sensor 250 which is located on one surface of the contact body 210 and measures a contact pressure of the wafer 100.
The present invention relates to a contact body 210, and more particularly, the contact body 210 is formed in plurality on a side surface of a bracket fastening body 220, and rotates and fixes a wafer 100 by a bracket actuator 230. Such a contact 210 is formed of a polymer as an insulating material, and one surface is formed in a straight line or a curved line. Also, one end of the contact body 210 is rotated by the holder actuator 230, and is rotated downward when the wafer 100 is rotated, so as to be prevented from being caught in the edge detecting part 300. The contact body 210 is formed with an elastic member formed of a spring to generate a uniform contact force with the wafer 100, but the kind of the elastic member is not limited in the present invention. The contact body 210 has a contact pressure measuring sensor formed on one surface thereof for measuring a contact pressure with the wafer 100, and the wafer 100 made of silicon can be fixed and rotated in a state where the wafer 100 is prevented from being damaged by the contact pressure measuring sensor. At this time, the contact body 210 fixes the wafer 100 with a certain pressure so as not to be separated from the contact body 210 while the wafer 100 rotates.
Therefore, the contact body 210 has a feature of fixing the wafer 100 and fixing the corner of the wafer 100 for rotation.
(embodiment 3-1) the present invention relates to a wafer edge defect inspection apparatus, according to embodiment 2-1, the edge detecting section 300 includes: a light source 310 that emits light of a certain illuminance to the corner; and a camera 320 that photographs the wafer corner 110.
(embodiment 3-2) the wafer edge defect inspection apparatus according to the present invention of embodiment 3-1, the camera 320 and/or the light source 310 are formed with one or more.
(embodiment 3-3) the wafer edge defect inspection apparatus of the present invention according to embodiment 3-1, comprising: a detection housing 330 that holds the light source 310 and the camera 320.
(embodiment 3-4) according to the wafer edge defect inspection apparatus of the present invention of embodiment 3-3, the inspection housing 330 is formed with one or more.
(examples 3-5) according to the wafer corner defect inspection apparatus of the present invention of examples 3-4, the inspection case is fixed or changeable.
The present invention relates to an edge detecting unit 300, and more particularly, to an edge detecting unit 300 for photographing and inspecting a wafer corner 110. Such an edge detecting part 300 is used to inspect corners formed of silicon and possibly causing defects at the time of manufacturing, and is disposed at a side surface of the wafer chuck 200. The edge detecting part 300 is formed with a light source 310 emitting light of a certain illuminance toward the wafer 100, and the light source 310 emits light at a certain angle to prevent the light from being reflected into the camera 320. In addition, the light source 310 is formed with one or more and is fixedly formed on the sensing housing 330. The light source 310 is formed in a curved surface of a "C" shape, and emits light to the plane 111, the vertical plane 113, and the rear surface 112 of the light source 310 at the same time. Further, the camera 320 is disposed near the light source 310, and checks the edge angle of the wafer 100 fixed and rotated on the wafer chuck 200. At this time, the camera 320 is also formed with one or more, like the light source 310, and fixed on the detection housing 330. Further, the camera 320 photographs the vertical surface 113, the first boundary surface 114, and the second boundary surface 115 of the wafer corner 110, respectively. The sensing housing 330 is formed in one or more and fixes the light source 310 and the camera 320 at the same time or fixes the light source 310 and the camera 320, respectively. At this time, the inspection housing 330 fixing the light source 310 and the camera 320 is fixed or changeable on the wafer chuck 200, and a plurality of inspection housings 330 are formed at a certain interval to maintain an illuminance required for photographing by the camera 320.
(embodiment 3-6) the wafer edge defect inspection apparatus of the present invention according to embodiment 3-3, comprising: and a reflection unit 331 formed on an inner surface of the detection case 330.
(embodiment 3-7) the wafer edge defect inspection apparatus of the present invention according to embodiment 3-6, comprising: and a diffusion plate 332 attached to the sensing case 330 or the light source 310, for diffusing the light of the light source 310.
(embodiment 3-8) according to the wafer edge defect inspection apparatus of the present invention of embodiment 3-3, the inspection housing 330 is formed in a circular or polygonal shape.
The present invention relates to the sensing body 330, and particularly, the sensing body 330 reflects and diffuses the light of the light source 310. Such a sensing housing 330 is formed with a first sensing housing 333 to which the light source 310 is fixed, and a second sensing housing 334 to which the camera 320 is fixed. The first detection case 333 is fixed with the light source 310, and emits light to the edge of the entire wafer 100 through a curved surface formed in a circular or polygonal shape. And, the first sensing housing 333 is formed with a coupling rod to be coupled to the second sensing housing 334 or fixed to the wafer chuck 200. The first sensing case 333 has a reflection portion 331 formed on an inner surface thereof, and reflects and transmits light emitted from the light source 310 to the wafer 100. In addition, the first sensing case 333 is formed with a diffusion plate 332 to diffuse the light of the light source 310, and the diffusion plate 332 emits light to the entire wafer 100, thereby more effectively monitoring the edge angle at the camera 320. The second sensing housing 334 is fixedly formed on the ground to fix the camera 320, and is formed adjacent to the wafer chuck 200.
Accordingly, the inspection case 330 fixes the light source 310 and the camera 320, and effectively inspects the edge defect while the wafer 100 rotates.
(embodiment 3-9) the wafer edge defect inspection apparatus of the present invention according to embodiment 3-3, comprising: a first transfer device 341 that moves the position of the camera 320 and/or the light source 310 inside the detection housing 330; and a first movement controller 342 controlling the position movement of the first transfer device 341.
(embodiment 3-10) the wafer edge defect inspection apparatus of the present invention according to embodiment 3-9, comprising: an illuminator 351 adjacent to the wafer 100; and an illuminance controller 352 recognizing a signal of the illuminator 351 and changing the luminance of the light source 310.
(embodiment 3-11) the wafer edge defect inspection apparatus of the present invention according to embodiment 3-9, comprising: and a second conveying device 361 that conveys the detection housing 330.
(examples 3 to 12) the wafer edge defect inspection apparatus of the present invention according to examples 3 to 11, comprising: a position measurement sensor 362 that measures the position of the corner; and a transfer controller 363 for recognizing a signal from the first position measuring sensor 362 and controlling a transfer locus of the second transfer device 361.
The present invention relates to the detection housing 330, and in particular, the detection housing 330 changes the position of the camera 320 and the light source 310. The inspection housing 330 emits uniform light toward the wafer chuck 200 and transmits the light source 310 and the camera 320 to inspect the wafer corner 110. At this time, the first transfer device 341 is formed to move the camera 320 and the light source 310 inside the detection housing 330, and the position movement of the first transfer device 341 is controlled by the first movement controller 342. Further, an illuminator 351 for measuring the luminosity of the light source 310 moved by the first conveyor 341 is formed, and the illuminator 351 is formed adjacent to the wafer 100. Such an illuminator 351 has a feature of changing the luminosity of the light source 310 by the illuminance controller 352.
(embodiment 4-1) the present invention relates to a wafer edge defect inspection apparatus, according to embodiment 3-1, comprising: and a control unit 410 for receiving the image information input from the camera 320 and determining whether the wafer corner 110 is defective.
(embodiment 4-2) the wafer edge defect inspection apparatus of the present invention according to embodiment 4-1, comprising: a focus controller 420 which detects an image of the camera 320 and controls a focus.
(embodiment 4-3) the wafer edge defect inspection apparatus of the present invention according to embodiment 4-1, the focus controller 420 comprising: and a lens driving device 430 that reciprocates the lens of the camera 320.
(embodiment 4-4) the wafer edge defect inspection apparatus of the present invention according to embodiment 4-1, comprising: and a judging part 440 for receiving the image information input and judging the type and position of the defect.
The present invention relates to a control unit 410, and more particularly, to a control unit for determining whether or not a defect exists in a wafer corner 110 measured by a camera 320. The control unit 410 receives image information detected by the camera 320 of the edge detection unit 300, and determines whether or not the wafer edge 110 is defective. The control unit 410 is formed with a focus controller 420 for detecting the image of the camera 320 and controlling the focus, and the edge angle of the rotating wafer 100 is measured by the focus controller 420. The focus controller 420 is also provided with a lens driving device 430 for reciprocating the lens of the camera 320, and the lens driving device 430 for moving the lens of the camera 320 up, down, left, and right. At this time, the lens driving device 430 simultaneously moves or respectively moves the plurality of cameras 320 for respectively detecting the vertical surface 113, the first boundary surface 114, and the second boundary surface 115 of the wafer corner 110. As described above, the type and position of the defect of the wafer 100 are determined by the determination unit by receiving the input of the image information of the camera 320 for detecting the wafer edge 110. At this time, the defects of the wafer 100 may be various defects such as a tear, a dent, a crack, and the like. Further, the camera 320 includes: a first camera 321 that measures defects while the wafer 100 is rotating; and a second camera 322 that amplifies and measures defects of the wafer 100. The first camera 321 and the second camera 322 are formed at intervals from each other, and the second camera 322 detects foreign substances and patterns other than defects and curvatures of boundary surfaces while enlarging and measuring corner defects of the wafer 100.
Therefore, the control part 410 of the present invention has a feature that can effectively detect the wafer 100 by controlling the camera 320.
(embodiment 5-1) the present invention relates to a wafer edge defect inspection apparatus, according to embodiment 1-1, comprising: a case 510 forming an inner space, accommodating the wafer chucking part 200 and the edge detecting part 300; a wafer 100 cassette 520 coupled to the outside of the case 510 and accommodating a plurality of wafers 100; and a transfer robot 530 transferring the wafer 100 to the wafer 100 cassette and the wafer chuck 200.
(embodiment 5-2) the wafer edge defect inspection apparatus of the present invention according to embodiment 5-1, comprising: and a power supply unit 540 for supplying power to the wafer 100 clamping unit, the edge detecting unit 300, the wafer 100 cassette, and the transfer robot.
(embodiment 5-3) the wafer edge defect inspection apparatus of the present invention according to embodiment 5-1, comprising: and a power charger 541 formed at the power supply part, storing and discharging power.
(embodiment 5-4) the wafer edge defect inspection apparatus of the present invention according to embodiment 5-1, comprising: and a vibration damper 511, which is provided in the housing 510, for damping vibration.
The present invention relates to a case 510 accommodating a wafer chuck 200 and an edge detector 300, and particularly, the case 510 is formed with a wafer 100 cassette coupled to the outside of the case 510 and accommodating a wafer 100. Such a case 510 accommodates the wafer chuck 200 and the edge detection part 300, and the case 510 is formed without being caught when the wafer chuck 200 rotates. Further, a wafer 100 cassette accommodating a plurality of wafers 100 formed by cutting off an ingot is formed outside the housing 510. The wafer 100 cassette supplies each wafer 100 to the upper portion of the wafer chuck 200, and the transfer robot supplied on the wafer 100 cassette supplies the wafer 100 by a robot arm, a cylinder, or the like. In addition, a power supply part for supplying power to the wafer chuck part 200, the edge detector 300, the wafer 100 cassette, and the transfer robot is formed, and a power charger for storing and discharging power is formed in the power supply part. In addition, the case 510 is formed with a vibration eliminating device that eliminates vibration of the wafer 100 in the process of inspecting the wafer 100, and the vibration eliminating device eliminates vibration acting on the outside of the case 510.
Accordingly, the case 510 accommodates the wafer chuck 200 and the edge detecting part 300, and is formed with a wafer 100 cassette and a transfer robot that accommodate and supply a plurality of wafers 100.
Embodiment 6-1 the present invention relates to a wafer edge defect inspection method, including: a transfer step S100 of transferring the wafer 100 to the wafer chuck 200; a holding step S200 of holding the edge of the wafer 100 after the transfer step S100; and a detection step S300 of detecting the wafer corner 110 after the holding step S200.
(embodiment 6-2) the wafer edge defect inspection method of the present invention according to embodiment 6-1, comprising: a partial detachment step S310 of detaching a portion of the plurality of contacts 210 holding the wafer 100 from the wafer 1000 in the inspection step S300.
(embodiment 6-3) the wafer edge defect inspection method of the present invention according to embodiment 6-1, comprising: a wafer rotating step S410, wherein in the detecting step S300, the wafer 100 is rotated.
(embodiment 6-4) the wafer edge defect inspection method of the present invention according to embodiment 6-1, comprising: a wafer moving step S420, wherein in the detecting step S300, the detecting device is moved.
The invention relates to a wafer edge defect inspection method, in particular to an edge defect inspection method for detecting an edge defect of a wafer 100, and the edge defect of the wafer 100 is inspected by a wafer edge defect inspection device. The wafer 100 is transferred to the wafer holding portion 200 in the transfer step S100, and the wafer 100 holds the corner of the wafer 100 in the holding step S200. At this time, in the clamping step S200, the wafer corner 110 is fixed by the plurality of contact bodies 210 formed in the wafer clamping portion 200. In the inspection step S300, the wafer edge angle 110 is inspected, and the wafer 100 is inspected by the edge inspection unit 300 as the wafer 100 rotates. At this time, the inspection step S300 rotates the wafer 100 in the wafer rotating step S410, or may rotate the inspection device around the wafer chuck 200 in the wafer 100 moving step. In the inspection step S300, the plurality of contact bodies 210 holding the wafer 100 are separated from the step S310 by rotating the contact bodies 210 up and down in order to prevent the wafer 100 from contacting the edge inspection unit 300.
Therefore, the wafer edge defect inspection method of the present invention has a feature of detecting the wafer edge 110 by the camera 320 as holding and rotating the wafer 100.
(embodiment 6-5) the wafer edge defect inspection method of the present invention according to embodiment 6-1, comprising: an illumination step S320 of radiating light toward the edge of the wafer 100 in the detection step S300; an imaging step S330 of imaging the edge of the wafer 100 in the detection step S300; a focus adjustment step S340 of adjusting a focus of the photographed image in the photographing step S330; and an illuminance adjusting step S350 of adjusting illuminance in the photographing step S330.
(embodiment 6-6) the wafer edge defect inspection method of the present invention according to embodiment 6-1, comprising: a defect determining step S500, wherein in the detecting step S300, the controller determines the defect.
The present invention relates to the inspection step S300, and more particularly, to the inspection step S300 of radiating light toward the wafer 100 and photographing defects of the wafer edge 110. This detection step S300 includes an illumination step S320 of diverging light toward the edge of the wafer 100, and light is diverged toward the wafer edge 110 by the light source 310 formed into a curved surface. Further, the method includes an imaging step S330 of imaging the edge of the wafer 100 by the camera 320, and the camera 320 images and measures the vertical surface 113, the first boundary surface 114, and the second boundary surface 115 of the edge, respectively. At this time, the camera 320 is formed in one or more, photographs the defect of the wafer corner 110 or magnifies and detects the wafer corner 110. The imaging step S330 includes a focus adjustment step S340 in which the control unit 410 adjusts the focus and an illuminance adjustment step S350 in which the illuminance is adjusted. In addition, a defect determination step S500 of determining a defect by the controller is formed in the detection step S300.
Description of the reference numerals
100: wafer 110: corner angle of wafer
111: plane 112: back side of the panel
113: vertical plane 14: first side interface
115: second boundary surface 200: wafer clamping part
210: contact body 220: bracket fastening body
230: the carriage actuator 240: driving motor
250: the holder operating cam 300: edge detection unit
310: light source 320: camera with camera module
321: the first camera 322: second camera
330: the detection case 331: reflection part
332: the diffusion plate 341: first conveying device
342: the first movement controller 351: illumination device
352: illuminance controller 361: second transfer device
362: position measurement sensor 363: transmission controller
410: the control unit 420: focus controller
430: lens driving device 510: shell body
S100: a transmission step S200: clamping step
S300: a detection step S310: partial detachment step
S320: illumination step S330: step of photographing
S340: focus adjustment step S350: step of adjusting illumination
S500: a defect determining step S410: wafer rotation step
S420: wafer moving step
Claims (6)
1. A wafer corner defect inspection apparatus, the apparatus comprising:
a wafer (100) in the shape of a plate;
a wafer holding section (200) for holding the wafer (100); and
and an edge detection unit (300) that detects a defect in the wafer corner (110).
2. The wafer edge defect inspection apparatus of claim 1,
the wafer chuck (200) comprises: and a plurality of contact bodies (210) which are formed to be in contact with the surface and/or corner of the wafer (100).
3. The wafer edge defect inspection apparatus of claim 2,
the edge detection unit (300) includes:
a light source (310) that emits light of a specific illuminance to the corner; and
a camera (320) that photographs the wafer corner (110).
4. A wafer corner defect inspection apparatus as defined in claim 3, comprising:
and a control unit (410) that receives an input of image information from the camera (320) and determines whether or not a wafer corner (110) is defective.
5. A wafer corner defect inspection apparatus as defined in claim 1, comprising:
a case (510) forming an internal space and accommodating the wafer chucking part (200) and the edge detecting part (300);
a wafer (100) cassette (520) coupled to the outside of the case (510) and accommodating a plurality of wafers (100); and
a transfer robot (530) that transfers the wafer (100) to the wafer (100) cassette and the wafer chuck (200).
6. A method for inspecting corner defects of a wafer, the method comprising:
a transfer step (S100) for transferring the wafer (100) to the wafer holding section (200);
a holding step (S200) for holding the edge of the wafer (100) after the transfer step (S100); and
and a detection step (S300) for detecting a wafer edge angle (110) after the holding step (S200).
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR10-2020-0005414 | 2020-01-15 | ||
| KR1020200005414A KR102453258B1 (en) | 2020-01-15 | 2020-01-15 | Apparatus and Method for Detecting of Awafer Edge |
| PCT/KR2020/007577 WO2021145516A1 (en) | 2020-01-15 | 2020-06-11 | Inspection apparatus and inspection method for wafer edge defects |
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| Publication Number | Publication Date |
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| CN115088060A true CN115088060A (en) | 2022-09-20 |
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| CN202080096090.2A Pending CN115088060A (en) | 2020-01-15 | 2020-06-11 | Wafer edge defect inspection device and inspection method |
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| JP (1) | JP7453494B2 (en) |
| KR (1) | KR102453258B1 (en) |
| CN (1) | CN115088060A (en) |
| WO (1) | WO2021145516A1 (en) |
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| CN114088724B (en) * | 2021-11-20 | 2023-08-18 | 深圳市北科检测科技有限公司 | Display screen edge defect detection device |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| JP3629244B2 (en) * | 2002-02-19 | 2005-03-16 | 本多エレクトロン株式会社 | Wafer inspection equipment |
| JP4358889B1 (en) | 2008-06-27 | 2009-11-04 | 日本エレクトロセンサリデバイス株式会社 | Wafer defect inspection equipment |
| KR101001113B1 (en) | 2008-11-12 | 2010-12-14 | 주식회사 코로 | Apparatus for Detecting Wafer Crack and Method for Detecting Wafer Defect |
| FR2959864B1 (en) | 2010-05-06 | 2013-01-18 | Altatech Semiconductor | DEVICE AND METHOD FOR INSPECTING SEMICONDUCTOR MOVING PLATELETS. |
| KR101207470B1 (en) * | 2010-11-16 | 2012-12-03 | 한미반도체 주식회사 | Wafer inspection device and wafer inspection system having the same |
| JP5769572B2 (en) | 2011-03-30 | 2015-08-26 | 株式会社Ｓｃｒｅｅｎホールディングス | Substrate inspection apparatus and substrate inspection method |
| KR101297209B1 (en) | 2011-11-04 | 2013-08-16 | (주)오로스 테크놀로지 | Defect analyzing method of semiconductor wafer |
| US9645097B2 (en) * | 2014-06-20 | 2017-05-09 | Kla-Tencor Corporation | In-line wafer edge inspection, wafer pre-alignment, and wafer cleaning |
| KR20160050112A (en) * | 2014-10-28 | 2016-05-11 | 주식회사 트라이비스 | System for check the side of solar cell wafer used line scan camera |
| KR102350549B1 (en) | 2014-12-05 | 2022-01-14 | 세메스 주식회사 | Apparatus for inspecting defects of a substrate |
| KR102062120B1 (en) * | 2018-02-09 | 2020-01-06 | 코리아테크노주식회사 | System and method for inspecting wafer chipping |
-
2020
- 2020-01-15 KR KR1020200005414A patent/KR102453258B1/en active IP Right Grant
- 2020-06-11 CN CN202080096090.2A patent/CN115088060A/en active Pending
- 2020-06-11 WO PCT/KR2020/007577 patent/WO2021145516A1/en active Application Filing
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| JP2023517166A (en) | 2023-04-24 |
| JP7453494B2 (en) | 2024-03-21 |
| KR102453258B1 (en) | 2022-10-11 |
| KR20210092001A (en) | 2021-07-23 |
| WO2021145516A1 (en) | 2021-07-22 |
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